KR102050575B1 - heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition - Google Patents
heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition Download PDFInfo
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- KR102050575B1 KR102050575B1 KR1020130056019A KR20130056019A KR102050575B1 KR 102050575 B1 KR102050575 B1 KR 102050575B1 KR 1020130056019 A KR1020130056019 A KR 1020130056019A KR 20130056019 A KR20130056019 A KR 20130056019A KR 102050575 B1 KR102050575 B1 KR 102050575B1
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- silicone resin
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- graphene
- emitting device
- heat dissipating
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- 239000000203 mixture Substances 0.000 title claims description 63
- 238000000034 method Methods 0.000 title claims description 18
- 229920002050 silicone resin Polymers 0.000 claims abstract description 82
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000002904 solvent Substances 0.000 claims description 10
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 7
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 6
- -1 polysiloxane Polymers 0.000 claims description 6
- 239000003795 chemical substances by application Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000000945 filler Substances 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 31
- 230000017525 heat dissipation Effects 0.000 description 19
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- 238000002834 transmittance Methods 0.000 description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000001723 curing Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000004971 Cross linker Substances 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003999 initiator Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
According to an embodiment, there is provided a light emitting device package. The light emitting device package includes a package substrate, a light emitting device chip mounted on the package substrate, and an interface layer disposed between the package substrate and the light emitting device chip. The interface layer includes a silicone resin in which a graphene filler is dispersed.
Description
The present disclosure generally relates to a heat dissipating composition, and more particularly, to a heat dissipating composition, a method for manufacturing the same, and a light emitting device package including the heat dissipating composition.
BACKGROUND OF THE INVENTION Light Emitting Devices are employed in light sources of backlight units or lighting devices of display products because of their advantages, such as low power consumption and high luminance. The light emitting device is manufactured in the form of a chip, and then mounted in various types of package substrates and provided in the aforementioned product in the form of a light emitting device package.
In general, the light emitting device package may perform a function of protecting a light emitting device chip and a connection function with a printed circuit board, as well as a heat dissipation function for dissipating heat generated from the light emitting device to the outside. In recent years, in accordance with the trend toward higher output power of light emitting device packages, light emitting device chips have become larger in size, and the reliability of such a heat dissipation function is becoming more important. Among techniques related to the implementation of such a heat dissipation function, there is a technique of interposing a heat dissipation paste adhesive to effectively dissipate heat generated from the light emitting element chip at the interface between the light emitting element chip and the package substrate. Conventional heat dissipation paste adhesives that perform this heat dissipation function include silver (Ag) paste adhesives containing a metal filler such as silver in an epoxy.
Embodiments of the present disclosure provide a heat dissipating composition and a method of manufacturing the same, which maintains light transmittance and have improved thermal conductivity.
Embodiments of the present disclosure provide a light emitting device package including the above-described heat dissipating composition as an interface layer.
A light emitting device package according to one aspect is provided. The light emitting device package includes a package substrate, a light emitting device chip mounted on the package substrate, and an interface layer disposed between the package substrate and the light emitting device chip. The interface layer includes a silicone resin in which a graphene filler is dispersed.
In example embodiments, the light emitting device may further include a fillet layer connected to the interface layer and extending to a side surface of the light emitting device chip.
According to another embodiment, the fillet layer may be made of the same material as the interface layer.
According to another embodiment, the interface layer may include a silicone resin in which the graphene filler is dispersed in an amount of 0.001 to 1% by weight.
According to another embodiment, the silicone resin in which 0.03 to 0.15% by weight of the graphene filler is dispersed may transmit 90% or more of light at 550 nm and have a thermal conductivity of 2 W / (cm · K) or more.
A light emitting device package according to another aspect is provided. The light emitting device package includes a light transmitting interface layer formed on at least a portion of a lower surface and a side surface of the light emitting device chip to perform a heat radiating function from the light emitting device chip. The light transmissive interfacial layer includes a silicone resin in which a graphene filler is dispersed.
According to another aspect, a heat dissipating composition is provided. The heat dissipating composition includes a silicone resin and a graphene filler dispersed in the silicone resin.
According to one embodiment, the graphene filler may have a 0.001 to 1% by weight.
According to another embodiment, the silicone resin in which 0.03 to 0.15% by weight of the graphene filler is dispersed may transmit 90% or more of light at 550 nm and have a thermal conductivity of 2 W / (cm · K) or more.
Provided is a method of making a heat dissipating composition according to another aspect. The method for preparing the heat dissipating composition includes preparing a first silicone resin including a siloxane containing a terminal vinyl group and a second silicone resin containing a curing agent. The method of manufacturing the heat dissipating composition includes first dispersing a graphene filler in any one of the first silicone resin and the second silicone resin. The method of manufacturing the heat dissipating composition includes mixing any one of the first silicone resin and the second silicone resin including the first dispersed graphene filler with the other.
According to one embodiment, the first silicone resin includes 60% by weight or more and less than 90% by weight of the terminal vinyl group-containing silonic acid, 10-30% by weight of the silicone resin and 10% by weight or less of the cyclosiloxane 0, and the second The silicone resin may comprise 60% to 90% by weight of silsesquioxane and 10 to 40% by weight of polysiloxane.
According to another embodiment, the weight ratio of the first silicone resin and the second silicone resin is 1: 4, the weight ratio of the graphene filler to the second silicone resin may be 1: 0.005.
According to another embodiment, the step of first dispersing the graphene filler in any one of the first silicone resin and the second silicone resin is the step of dispersing the graphene filler in a solvent, the solvent in which the graphene is dispersed And mixing and stirring any one of the first silicone resin and the second silicone resin to form an intermediate composition, and removing the solvent from the intermediate composition.
According to one embodiment, by dispersing the graphene in the silicone resin, it is possible to provide a heat dissipation composition to maintain the light transmittance and improve the thermal conductivity.
According to one embodiment, by applying the heat dissipation composition to the interface layer of the light emitting device chip and the package substrate, to improve the thermal conductivity to the package substrate while suppressing the optical loss to the light emitted through the heat dissipation composition to the outside. You can.
1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present disclosure.
FIG. 2 is a schematic diagram illustrating a simplified junction of a light emitting device chip and a package substrate of FIG. 1.
3 is a flow chart schematically illustrating a method of preparing a heat dissipating composition according to an embodiment of the present disclosure.
Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the technology disclosed in the present disclosure is not limited to the embodiments described herein and may be embodied in other forms. In the drawings, the width, thickness, and the like of the components are enlarged in order to clearly express the components of each device.
When an element is referred to herein as being positioned on top of another element, this includes both the meaning that the element is directly positioned on another element or that additional elements may be interposed between those elements. In the present specification, the term 'upper' or 'lower' is a relative concept set at an observer's viewpoint, and when the observer's viewpoint is different, 'upper' may mean 'lower', and 'lower' means 'upper'. It may mean.
Like reference numerals in the drawings indicate substantially the same elements as each other. In addition, singular expressions should be understood to include plural expressions unless the context clearly indicates otherwise, and the terms 'comprise' or 'having' include the features, numbers, steps, operations, components, and parts described. Or combinations thereof, it is to be understood that they do not preclude the presence or addition of one or more other features or numbers, steps, operations, components, parts or combinations thereof.
1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present disclosure. In the present exemplary embodiment, a package for converging a light emitting device chip includes a lead frame and a body part accommodating the light emitting device chip. However, the present invention is not limited thereto, and various other known modifications are possible.
Referring to the drawing, the light
As described above, a heat dissipation paste may be interposed at the interface between the light
However, according to the inventors, in the case of the heat dissipation composition containing the metal filler, there is a problem in reducing the transmittance of light passing through the heat dissipation composition by having a color. In particular, when the light emitting device chip includes a light emitting unit capable of side light emission and the heat dissipating composition is present on the side surface of the light emitting device chip, the light emitting device chip may have a problem of reducing light emission efficiency.
FIG. 2 is a schematic diagram illustrating a simplified junction of a light emitting device chip and a package substrate of FIG. 1. Referring to the drawings, the light
A
In the conventional interface layer, the heat radiation composition which employ | adopts a metal filler like a silver paste composition is applied for the increase of a heat radiation effect. The silver paste composition may improve the thermal conductivity by dispersing the silver filler in the epoxy resin, but has a disadvantage in that the light transmittance may be lowered because it is an opaque material having a white-based color. As shown in FIG. 2, when the colored metal filler heat dissipating composition is applied to the
Accordingly, the inventor proposes through the embodiments of the present disclosure a heat dissipating composition that can suppress the decrease in light transmittance and at the same time improve the thermal conductivity. The heat dissipation composition according to one embodiment includes a silicone resin and graphene dispersed in the silicone resin. The graphene may act as a heat dissipation filler in the heat dissipation composition.
As used herein, the term “graphene” means that the graphene having a plurality of carbon atoms covalently linked to each other to form a polycyclic aromatic molecule has a sheet-like structure. The carbon atoms linked by the covalent bond may form a 6-membered ring as a basic repeating unit, and may further include a 5-membered ring and / or a 7-membered ring. For example, the graphene may have various forms depending on the content of the 5-membered ring / 7-membered ring that may be included in the graphene, as well as a single layer form of carbon atoms covalently bonded to each other such as sp2 bonds. As used herein, the term “graphene” may refer to a graphene single layer formed of one graphene sheet or a plurality of layers formed by stacking a plurality of graphene sheets. The graphene may have a particle size of several nm to several hundred nm. This particle size can be controlled by processing the graphene by introducing a process such as a mechanical milling method.
According to one embodiment, the graphene may have about 0.001 to 1% by weight in the heat dissipating composition. As an example, the heat dissipating composition may include a silicone resin in which 0.03 to 0.15 wt% of graphene is dispersed, and may have a thermal conductivity of 2 W / (cm · K) or more. As another example, the heat dissipating composition may include a silicone resin in which 0.15% by weight of graphene is dispersed, and may have a thermal conductivity of 5 W / (cm · K) or more.
3 is a flow chart schematically illustrating a method of preparing a heat dissipating composition according to an embodiment of the present disclosure. Referring to FIG. 3, in 310 blocks, a first silicone resin including a siloxane containing a terminal vinyl group is prepared. Moreover, the 2nd silicone resin containing a hardening | curing agent is prepared. As an example, the first silicone resin may include a component that plays a role of a thermal curing initiator and a catalyst. As an example, the first silicone resin may include 60 wt% or more but less than 90 wt% of the terminal vinyl group-containing siloxane, 10-30 wt% of the silicone resin, and 10 wt% or less of the cyclosiloxane. The terminal vinyl group-containing siloxane may be, for example, methylphenylsiloxane containing a terminal dimethylvinylsiloxy group. The cyclosiloxane may be, for example, phenylmethylcyclosiloxane. The second silicone resin may include a silicone resin forming a basic skeleton and a crosslinker component that is responsible for curing. As an example, the second silicone resin may include 60 wt% to 90 wt% silsesquioxane and 10 to 40 wt% polysiloxane. In an embodiment, the weight ratio of the first silicone resin and the second silicone resin may be 1: 4.
In
In
Hereinafter, a method of concretely implementing the above-described embodiment will be described. First, graphene having a particle size of 150 to 200 nm is prepared. Using ethanol as a solvent, the graphene is uniformly dispersed in the ethanol and dissolved. After adding the second silicone resin to ethanol in which the graphene is dispersed, the mixture is stirred and mixed. In order to disperse | distribute the said graphene more uniformly and efficiently, the ethanol containing the graphene is mixed with the said 2nd silicone resin containing the hardening | curing agent component. At this time, the weight ratio of the graphene to the second silicone resin may be 1: 0.005. The ethanol is removed from the mixed solution using a centrifuge to prepare a second silicone resin in which the graphene is dispersed. In this case, the ethanol may be more completely removed by further heating. Thereafter, the first silicone resin is added to the second silicone resin from which ethanol has been removed, and the mixture is stirred and mixed. Thereafter, a heat dissipation composition including a silicone resin in which graphene is dispersed may be prepared through a curing process.
Table 1 below is an experimental result showing the light transmittance and thermal conductivity according to the amount of graphene in the heat radiation composition prepared by the above-described method.
In the experimental results of Table 1, the light transmittance is the result measured for the light of 550 nm, the thermal conductivity is calculated for the amount of heat passing through the cross section, for the unit time and unit length.
Referring to Table 1, the thermal conductivity increases as the graphene content increases to 0.15% by weight. In addition, the light transmittance is gradually decreased, but still exhibits a light transmittance of 90% or more. As an example, when the heat dissipating composition includes a silicone resin in which 0.03 to 0.15 wt% of graphene is dispersed, the heat dissipating composition may have a light transmittance of about 92 to 98% and a thermal conductivity of 2 W / (cm · K) or more. Can be. As another example, the heat dissipating composition may include a silicone resin in which 0.15 wt% of graphene is dispersed, may have a light transmittance of about 92%, and may have a thermal conductivity of 5 W / (cm · K) or more. That is, in the case of a heat dissipating composition in which 0.15% by weight of graphene is dispersed in a silicone resin, the heat dissipating composition has about three times the thermal conductivity of the heat dissipating composition which does not contain graphene.
Therefore, according to one embodiment of the present disclosure, a light-transmissive heat dissipating composition in which graphene is dispersed may be applied to the light emitting device package. Specifically, the heat dissipating composition may be formed on at least a portion of the lower surface and the side surface of the light emitting device chip, and the heat dissipation function from the light emitting device chip may also be performed. That is, the light-transmitting heat dissipating composition may be applied to the
In this case, in the process of forming the
Although described above with reference to the drawings and embodiments, those skilled in the art various modifications and changes to the embodiments disclosed in the present disclosure without departing from the technical spirit of the present disclosure described in the claims below I can understand that you can.
100: light emitting device package, 110: light emitting device chip, 122: first lead frame, 124: second lead frame, 130: body portion, 140: encapsulant, 150: lens portion, 210: interface layer, 220: fillet layer .
Claims (18)
Primary dispersing graphene in any one of the first silicone resin and the second silicone resin; And
Mixing any one of the first silicone resin and the second silicone resin including the first dispersed graphene with the other
Method for producing a heat dissipating composition.
The first silicone resin includes 60% by weight or more and less than 90% by weight of the terminal vinyl group-containing siloxane, 10-30% by weight of the silicone resin, and more than 0% by weight or less and 10% by weight of the cyclosiloxane,
The second silicone resin includes 60 wt% to 90 wt% of silsesquioxane and 10 to 40 wt% of polysiloxane.
Method for producing a heat dissipating composition.
The weight ratio of the first silicone resin and the second silicone resin is 1: 4, the weight ratio of the graphene to the second silicone resin is 1: 0.005.
Method for producing a heat dissipating composition.
Firstly dispersing graphene in any one of the first silicone resin and the second silicone resin
Dispersing the graphene in a solvent;
Mixing and stirring any one of the solvent in which the graphene is dispersed, the first silicone resin, and the second silicone resin to form an intermediate composition; And
Removing the solvent from the intermediate composition
Method for producing a heat dissipating composition.
The step of mixing any one of the first silicone resin and the second silicone resin containing the graphene dispersed in the first and the other
Stirring the first silicone resin and the second silicone resin to uniformly disperse the graphene in the first and second silicone resins;
Method for producing a heat dissipating composition.
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| KR1020130056019A KR102050575B1 (en) | 2013-05-16 | 2013-05-16 | heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition |
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| KR1020130056019A KR102050575B1 (en) | 2013-05-16 | 2013-05-16 | heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition |
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| KR102497180B1 (en) | 2015-03-11 | 2023-02-08 | 코닌클리케 필립스 엔.브이. | Light emitting device cooling |
| CN107785477A (en) * | 2017-09-18 | 2018-03-09 | 苏州汉瑞森光电科技股份有限公司 | A kind of high heat conduction LED encapsulation structure |
| CN109166957B (en) * | 2018-08-03 | 2020-05-22 | 湖南华特光电科技有限公司 | LED lamp packaging process |
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| KR101232569B1 (en) * | 2010-12-28 | 2013-02-12 | 주식회사 포스코 | Heterogeneous resin coated steel sheet improved thermal conductivity and heat-releaseproperty |
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