KR20140135554A - heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition - Google Patents

heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition Download PDF

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KR20140135554A
KR20140135554A KR1020130056019A KR20130056019A KR20140135554A KR 20140135554 A KR20140135554 A KR 20140135554A KR 1020130056019 A KR1020130056019 A KR 1020130056019A KR 20130056019 A KR20130056019 A KR 20130056019A KR 20140135554 A KR20140135554 A KR 20140135554A
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South Korea
Prior art keywords
silicone resin
light emitting
emitting device
graphene
dispersed
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KR1020130056019A
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Korean (ko)
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KR102050575B1 (en
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이채현
장정식
이승애
오광용
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서울반도체 주식회사
서울대학교산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements

Abstract

According to one embodiment of the present invention, provided is a light emitting device package. The light emitting device package includes: a package substrate, a light emitting device chip which is mounted on the package substrate, and an interface layer which is arranged between the package substrate and the light emitting device chip. The interface layer includes silicon resins on which graphene fillers are dispersed.

Description

TECHNICAL FIELD [0001] The present invention relates to a heat dissipating composition, a method of manufacturing the same and a heat dissipation composition,

The disclosure relates to a general heat radiation composition, and more particularly, to a heat radiation composition, a method of manufacturing the same, and a light emitting device package including the heat radiation composition.

BACKGROUND ART A light emitting device is employed as a backlight unit of a display product or a light source of a lighting device because of its advantages such as low power consumption and high luminance. The light emitting element is once manufactured in the form of a chip, and then mounted in various types of package substrates and provided in the above-described product in the form of a light emitting device package.

In general, the light emitting device package can function not only to protect the light emitting device chip and the connection with the printed circuit board, but also to function to radiate heat generated from the light emitting device to the outside. In recent years, the light emitting device chip has been made larger in accordance with the tendency of the light emitting device package to be higher in output, and reliability of such heat dissipating function becomes more important. Among techniques related to the implementation of such a heat dissipating function, there is a technique of interposing a heat dissipation paste adhesive for effectively dissipating heat generated in the light emitting device chip at the interface between the light emitting device chip and the package substrate. Examples of conventional heat radiation paste adhesives that perform such a heat dissipating function include silver (Ag) paste adhesives in which a metal filler such as silver is contained in an epoxy.

Embodiments of the present disclosure provide a heat radiation composition that maintains translucency and has improved thermal conductivity and a method of manufacturing the same.

The embodiment of the present disclosure provides a light emitting device package comprising the aforementioned heat radiation composition as an interface layer.

A light emitting device package according to one aspect is provided. The light emitting device package includes a package substrate, a light emitting device chip mounted on the package substrate, and an interface layer disposed between the package substrate and the light emitting device chip. The interface layer includes a silicone resin in which a graphene filler is dispersed.

According to one embodiment, the light emitting device may further include a fillet layer connected to the interface layer and extending to the side of the light emitting device chip.

According to another embodiment, the fillet layer may be made of the same material as the interface layer.

According to another embodiment, the interface layer may comprise 0.001 to 1% by weight of the silicone resin with the graphene filler dispersed therein.

According to another embodiment, the silicon resin in which 0.03 to 0.15% by weight of the graphene filler is dispersed may transmit 90% or more of 550 nm light and may have a thermal conductivity of 2 W / (cm · K) or more.

A light emitting device package according to another aspect is provided. The light emitting device package includes a light-transmitting interface layer formed on at least a portion of a lower surface and a side surface of the light emitting device chip and performing a heat radiation function from the light emitting device chip. The translucent interface layer includes a silicone resin in which a graphene filler is dispersed.

A heat radiation composition according to another aspect is provided. The heat radiation composition includes a silicone resin and a graphene filler dispersed in the silicone resin.

According to one embodiment, the graphene filler may have a content of 0.001 to 1% by weight.

According to another embodiment, the silicone resin in which 0.03 to 0.15 wt% of the graphene filler is dispersed may transmit 90% or more of light at 550 nm and may have a thermal conductivity of 2 W / (cm · K) or more.

The present invention is further provided in a method for producing a heat radiation composition according to another aspect. The method for producing the heat radiation composition includes preparing a first silicone resin including a siloxane containing a terminal vinyl group and a second silicone resin containing a curing agent. The method for manufacturing the heat radiation composition includes a step of first dispersing a graphene filler in any one of the first silicone resin and the second silicone resin. The method of manufacturing the heat radiation composition may include mixing any one of the first silicone resin and the second silicone resin including the first dispersed graphene filler with the other one.

According to one embodiment, the first silicone resin comprises less than 90% by weight of the terminal vinyl group-containing silonic acid, less than 90% by weight of the terminal vinyl group, 10-30% by weight of the silicone resin and more than 0% by weight of the cyclosiloxane, The silicone resin may comprise 60% to 90% by weight of silsesquioxane and 10 to 40% by weight of polysiloxane.

According to another embodiment, the weight ratio of the first silicone resin and the second silicone resin is 1: 4, and the weight ratio of the graphene filler to the second silicone resin may be 1: 0.005.

According to another embodiment, the step of firstly dispersing the graphene filler in any one of the first silicone resin and the second silicone resin includes the steps of dispersing the graphene filler in a solvent, And mixing and stirring the first silicone resin and the second silicone resin to form an intermediate composition, and removing the solvent from the intermediate composition.

According to one embodiment, by dispersing graphene in a silicone resin, it is possible to provide a heat radiation composition that maintains translucency and has improved thermal conductivity.

According to an embodiment, by applying the heat radiation composition to an interface layer between a light emitting device chip and a package substrate, it is possible to improve the thermal conductivity of the package substrate while suppressing light loss to the outside through the heat radiation composition .

1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present disclosure;
FIG. 2 is a schematic view showing a junction between a light emitting device chip and a package substrate of FIG. 1 in a simplified manner. FIG.
3 is a flow chart schematically showing a method of manufacturing a heat radiation composition according to an embodiment of the present disclosure.

Embodiments of the present disclosure will now be described in more detail with reference to the accompanying drawings. However, the techniques disclosed in this disclosure are not limited to the embodiments described herein but may be embodied in other forms. In the drawings, the width, thickness, and the like of the components are enlarged in order to clearly illustrate the components of each device.

Where an element is referred to herein as being located on another element, it is meant to encompass both that the element is directly on top of the other element or that additional elements can be interposed between the elements. In this specification, the terms 'upper' and 'lower' are relative concepts set at the observer's viewpoint. When the viewer's viewpoint is changed, 'upper' may mean 'lower', and 'lower' It may mean.

Like numbers refer to like elements throughout the several views. It is to be understood that the singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise, and the terms "comprise" Or combinations thereof, and does not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or combinations thereof.

1 is a cross-sectional view schematically showing a light emitting device package according to an embodiment of the present disclosure; In the present embodiment, the lead frame and the body portion accommodating the lead frame are provided as a package for converging the light emitting device chip. However, the present invention is not limited to this, and various other well-known modifications are possible.

Referring to FIG. 1, a light emitting device chip 110 may be disposed on a first lead frame 110 of a light emitting device package 100. At this time, the electrode pads disposed on the light emitting device chip 110 may be electrically connected to the first lead frame 122 and the second lead frame 124 by a method such as wire bonding. The body part 130 is disposed to surround the light emitting device chip 110 and the sealing material 140 can seal the light emitting device chip 110 in the body part 130. [ The body portion 130 may include a reflector on a surface facing the light emitting device chip 110. The encapsulant 140 may include a phosphor. The lens unit 150 may be disposed on the body above the light emitting device chip 110.

As described above, a heat dissipation paste may be interposed at the interface between the light emitting device chip 110 and the first lead frame 122. The heat dissipation paste can effectively dissipate the heat generated from the light emitting device chip 110 through the first lead frame 122 to the outside of the light emitting device package. In the case of a conventional silver paste, a silver filler is dispersed in an epoxy resin in order to improve the thermal conductivity.

However, according to the inventors, in the case of a heat radiation composition containing a metal filler, there is a problem that the transmittance of light passing through the heat radiation composition is lowered due to the coloring property. In particular, when the light emitting device chip includes a light emitting portion capable of emitting light on the side and the heat radiation composition exists on a side surface of the light emitting device chip, there is a problem that the light emitting efficiency of the light emitting device chip is reduced.

FIG. 2 is a schematic view showing a junction between a light emitting device chip and a package substrate of FIG. 1 in a simplified manner. FIG. Referring to the drawings, a light emitting device chip 110 is mounted on a first lead frame 122 of a package substrate. An interface layer 210 may be formed between the first lead frame 122 and the light emitting device chip 110. The interface layer 210 may be formed by interposing a heat radiation composition having an adhesive function between the first lead frame 122 and the light emitting device chip 110. The interface layer 210 has a function of bonding the first lead frame 122 and the light emitting device chip 110 and a function of transferring heat generated from the light emitting device chip 110 to the first lead frame 1220 Can be performed.

A fillet layer 220 may be formed on a part of the side surface of the light emitting device chip 210. The fillet layer 220 may be formed in the process of interposing the heat radiation composition between the light emitting chip chip 210 and the first lead frame 122. Specifically, when the heat radiation composition is applied to the lower surface of the light emitting device chip 210 or the upper surface of the first lead frame 122, and the light emitting device chip 210 and the first lead frame 122 are bonded to each other, The fillet layer 220 can be formed by moving the composition from the interface region to a portion of the side surface of the light emitting device chip 210 and the outer region of the first lead frame 122. [ When the light emitting device chip 110 includes a light emitting portion that emits light in the lateral direction, the fillet layer 220 may be disposed on the path of light emitted in the first direction.

In the conventional interface layer, a heat radiation composition employing a metal filler such as a silver paste composition is applied to increase the heat radiation effect. The silver paste composition can improve the thermal conductivity by dispersing the silver filler in the epoxy resin, but has a disadvantage in that the light transmittance can be lowered because it is an opaque material having a hue of white color. 2, when a color-based metal filler heat-radiating composition is applied to the interface layer 210, a colored fillet layer 220 may be formed on the side surface of the light-emitting device chip 210. Accordingly, the light transmittance of light emitted from the side surface of the light emitting device chip 210 can be lowered. According to the inventors, when the fillet layer is formed by the height of the light emitting device chip on both sides of the light emitting device chip and the fillet layer is formed by the silver paste composition, the light emitting efficiency of about 20% It was simulated that degradation occurred.

Accordingly, the inventors propose through the embodiments of the present disclosure a heat radiation composition capable of suppressing a decrease in light transmittance and at the same time improving thermal conductivity. The heat radiation composition according to one embodiment includes a silicone resin and graphene dispersed in the silicone resin. The graphene may act as a heat-radiating filler in the heat-radiating composition.

The term " graphene " as used herein means that a plurality of carbon atoms are covalently linked to each other to form a polycyclic aromatic molecule, wherein the graphene has a sheet-like structure. The carbon atoms connected to the covalent bond may form a 6-membered ring as a basic repeating unit, and may further include a 5-membered ring and / or a 7-membered ring. The graphene may have various forms depending on, for example, a single layer type of carbon atoms covalently bonded to each other such as an sp2 bond, as well as a content of a 5-membered ring / 7-membered ring which may be contained in the graphene. As used herein, the term "graphene" may mean either a single layer of graphene formed of a single graphene sheet or a plurality of layers formed by stacking a plurality of the graphene sheets. The graphene may have a particle size of several nanometers to several hundreds of nanometers. Such particle size can be controlled by processing the graphene by introducing a process such as a mechanical milling method.

According to one embodiment, the graphene may have from about 0.001 to about 1 wt% in the heat radiation composition. For example, the heat radiation composition may include a silicone resin in which 0.03 to 0.15 wt% of graphene is dispersed, and may have a thermal conductivity of 2 W / (cm · K) or more. As another example, the heat radiation composition may include a silicone resin in which 0.15 wt% of graphene is dispersed, and may have a thermal conductivity of 5 W / (cm · K) or more.

3 is a flow chart schematically showing a method of manufacturing a heat radiation composition according to an embodiment of the present disclosure. Referring to FIG. 3, at 310 block, a first silicone resin comprising a siloxane containing a terminal vinyl group is prepared. Further, a second silicone resin containing a curing agent is prepared. As an example, the first silicone resin may include a component that acts as a thermal curing initiator and as a catalyst. As an example, the first silicone resin may comprise less than 90% by weight of the terminal vinyl group-containing siloxane, 10-30% by weight of the silicone resin, and less than 10% by weight of the cyclosiloxane. The terminal vinyl group-containing siloxane may be, for example, a methylphenylsiloxane containing a terminal dimethylvinylsiloxy group. The cyclosiloxane may be, by way of example, phenylmethylcyclosiloxane. The second silicone resin may include a silicone resin forming a basic skeleton and a cross linker component responsible for curing. As an example, the second silicone resin may comprise 60 to 90% by weight of silsesquioxane and 10 to 40% by weight of polysiloxane. In one embodiment, the weight ratio of the first silicone resin and the second silicone resin may be 1: 4.

At 320 blocks, graphene is first dispersed in either the first silicone resin or the second silicone resin. As an example, the graphene may be graphene produced by performing mechanical milling to have a particle size of several nanometers to several hundreds of nanometers. The step of firstly dispersing graphene in any one of the first silicone resin and the second silicone resin includes the steps of dispersing the graphene in a solvent, mixing the graphene-dispersed solvent with the first silicone resin and the second silicone resin 2 < / RTI > silicone resin to form an intermediate composition, and removing the solvent from the intermediate composition.

At 330 block, any one of the first silicone resin and the second silicone resin containing the primarily dispersed graphene is mixed with the other one. According to a specific embodiment, by stirring the first silicone resin and the second silicone resin, the graphene can be uniformly and secondarily dispersed in the first and second silicone resins. As a result, a heat radiation composition containing a silicone resin in which graphene is dispersed can be produced.

Hereinafter, a method of embodying the embodiment will be described in detail. First, graphene having a particle size of 150 to 200 nm is prepared. Using ethanol as a solvent, the graphene is uniformly dispersed and dissolved in the ethanol. The second silicone resin is added to ethanol in which the graphene is dispersed, followed by stirring and mixing. To more uniformly and efficiently disperse the graphene, the graphene-containing ethanol is mixed with the second silicone resin comprising the hardener component. At this time, the weight ratio of the graphene to the second silicone resin may be 1: 0.005. The ethanol is removed from the mixed solution by using a centrifuge to prepare a second silicone resin in which the graphene is dispersed. At this time, by further performing the heating process, the ethanol can be more completely removed. Thereafter, the first silicone resin is added to the second silicone resin from which ethanol has been removed, and the resultant is mixed by stirring. Thereafter, a heat radiation composition containing a silicone resin in which graphene is dispersed can be produced through a curing process.

Table 1 below shows experimental results showing the light transmittance and the thermal conductivity according to the amount of graphene in the heat radiation composition prepared by the above-mentioned method.

No. Graphene content (% by weight) Light transmittance (%) Thermal conductivity (W / (cm · K) One 0 100 1.419 2 0.03 98.5 2.112 3 0.06 97.0 2.154 4 0.09 95.5 3.253 5 0.12 94.0 3.490 6 0.15 92.5 5.154

In the experimental results shown in Table 1, the light transmittance is a result of measuring light with a wavelength of 550 nm, and the thermal conductivity is calculated by calculating the amount of heat that passes across the cross section with respect to unit time and unit length.

Referring to Table 1, as the content of graphene increases to 0.15 wt%, the thermal conductivity increases. The light transmittance gradually decreases, but still shows a light transmittance of 90% or more. For example, when the heat radiation composition contains a silicone resin in which graphene is dispersed in an amount of 0.03 to 0.15 wt%, it has a light transmittance of about 92 to 98% and a thermal conductivity of 2 W / (cm · K) . As another example, the heat radiation composition may include a silicone resin in which 0.15 wt% of graphene is dispersed, has a light transmittance of about 92%, and may have a thermal conductivity of 5 W / (cm · K) or more. That is, in the case of the heat radiation composition in which 0.15 wt% of graphene is dispersed in the silicone resin, the heat radiation composition has about three times thermal conductivity as compared with the heat radiation composition not containing the graphene.

Thus, according to one embodiment of the present disclosure, a translucent heat radiation composition in which graphene is dispersed can be applied to a light emitting device package. Specifically, the heat radiation composition may be formed on at least a part of the lower surface and the side surface of the light emitting device chip, and the heat radiation function from the light emitting device chip may be performed. That is, the translucent heat radiation composition may be applied to the interface layer 210 between the light emitting device chip 110 shown in FIG. 2 and the package substrate (i.e., the lead frame 122). The translucent heat radiation composition may be applied on the lower surface of the light emitting device chip 210 or on the upper surface of the first lead frame 122 in the form of a paste, for example.

In this case, even when the fillet layer 220 is formed on the side surface of the light emitting device chip 110 in the process of forming the interface layer 210, a light transmittance of 90% or more can be ensured in the lateral direction. In addition, in the interface layer 210, the thermal conductivity between the light emitting device chip 210 and the first lead frame 122 can be improved by graphene as described above.

 While the invention has been shown and described with reference to certain preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims It can be understood that

A light emitting device package comprising a light emitting device package and a light emitting device package comprising the light emitting device package and the light emitting device package according to claim 1, .

Claims (18)

A package substrate;
A light emitting device chip mounted on the package substrate; And
And an interface layer disposed between the package substrate and the light emitting device chip,
Wherein the interface layer comprises a silicone resin in which graphene is dispersed
A light emitting device package. The method according to claim 1,
And a fillet layer connected to the interface layer and extending to the side of the light emitting device chip
A light emitting device package. 3. The method of claim 2,
Wherein the fillet layer is made of the same material as the interface layer
A light emitting device package. The method according to claim 1,
The interface layer
0.001 to 1% by weight of the silicone resin dispersed in the graphene
A light emitting device package. The method according to claim 1,
0.03 to 0.15% by weight of the silicone resin in which the graphene is dispersed has a transmittance of 90% or more at 550 nm and a thermal conductivity of 2 W / (cm · K) or more
A light emitting device package. 6. The method of claim 5,
0.15% by weight of the silicone resin in which the graphene is dispersed has a thermal conductivity of 5 W / (cm · K) or more which transmits at least 90%
A light emitting device package. And a translucent interface layer formed on at least a part of a lower surface and a side surface of the light emitting device chip and performing a heat radiation function from the light emitting device chip,
Wherein the translucent interface layer comprises a silicone resin in which graphene is dispersed
A light emitting device package. 8. The method of claim 7,
The light-
0.001 to 1% by weight of the silicone resin dispersed in the graphene
A light emitting device package. 8. The method of claim 7,
0.03 to 0.15% by weight of the silicone resin in which the graphene is dispersed has a transmittance of 90% or more at 550 nm and a thermal conductivity of 2 W / (cm · K) or more
A light emitting device package. 8. The method of claim 7,
0.15% by weight of the silicone resin in which the graphene is dispersed has a thermal conductivity of 5 W / (cm · K) or more which transmits at least 90%
A light emitting device package. Comprising a silicone resin and graphene dispersed in said silicone resin
Heat radiation composition. 12. The method of claim 11,
Wherein the graphene has from 0.001 to 1 wt%
Heat radiation composition. 12. The method of claim 11,
0.03 to 0.15% by weight of the silicone resin in which the graphene is dispersed has a transmittance of 90% or more at 550 nm and a thermal conductivity of 2 W / (cm · K) or more
Heat radiation composition. Preparing a first silicone resin comprising a siloxane containing a terminal vinyl group and a second silicone resin containing a curing agent;
Firstly dispersing graphene in any one of the first silicone resin and the second silicone resin; And
And mixing the first silicone resin and the second silicone resin including the graphene dispersed first with the other one
A method for producing a heat radiation composition. 15. The method of claim 14,
Wherein the first silicone resin comprises less than 90% by weight of a terminal vinyl group-containing siloxane, 10-30% by weight of a silicone resin, and up to 10% by weight of a cyclosiloxane,
Wherein the second silicone resin comprises 60 to 90% by weight of silsesquioxane and 10 to 40% by weight of polysiloxane
A method for producing a heat radiation composition. 15. The method of claim 14,
Wherein the weight ratio of the first silicone resin to the second silicone resin is 1: 4, and the weight ratio of the graphene to the second silicone resin is 1: 0.005
A method for producing a heat radiation composition. 15. The method of claim 14,
The step of first dispersing the graphene in any one of the first silicone resin and the second silicone resin
Dispersing the graphene in a solvent;
Mixing and stirring the graphene-dispersed solvent with either the first silicone resin or the second silicone resin to form an intermediate composition; And
Removing the solvent from the intermediate composition
A method for producing a heat radiation composition. The step of mixing any one of the first silicone resin and the second silicone resin including the graphene dispersed first with the other one
And agitating the first silicone resin and the second silicone resin to uniformly secondary disperse the graphene in the first and second silicone resins
A method for producing a heat radiation composition.
KR1020130056019A 2013-05-16 2013-05-16 heat dissipating commposition, method of thereof and light emitting device package including heat dissipating composition KR102050575B1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016142258A1 (en) * 2015-03-11 2016-09-15 Koninklijke Philips N.V. Light emitting device cooling
CN107785477A (en) * 2017-09-18 2018-03-09 苏州汉瑞森光电科技股份有限公司 A kind of high heat conduction LED encapsulation structure
CN109166957A (en) * 2018-08-03 2019-01-08 湖南华特光电科技有限公司 A kind of LED light packaging technology

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WO2016142258A1 (en) * 2015-03-11 2016-09-15 Koninklijke Philips N.V. Light emitting device cooling
US10026884B2 (en) 2015-03-11 2018-07-17 Koninklijke Philips N.V. Light emitting device cooling
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