CN106299042A - A kind of ultraviolet LED light source inorganic encapsulated method - Google Patents
A kind of ultraviolet LED light source inorganic encapsulated method Download PDFInfo
- Publication number
- CN106299042A CN106299042A CN201610756121.8A CN201610756121A CN106299042A CN 106299042 A CN106299042 A CN 106299042A CN 201610756121 A CN201610756121 A CN 201610756121A CN 106299042 A CN106299042 A CN 106299042A
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- Prior art keywords
- light source
- led light
- ultraviolet led
- inorganic encapsulated
- encapsulated method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a kind of ultraviolet LED light source inorganic encapsulated method, belong to LED encapsulation technology field.Use tin cream or eutectic Welding to be fixed on the substrate containing layer printed circuit board vertical UV LED chip, use gold thread to be connected with electrode of substrate by chip, pour noble gas in inside, re-use tin cream and quartz lens is covered in step layer, complete encapsulation.Use the aging performance that full-inorganic material can avoid Organic substance such as silica gel to cause in the case of a high temperature.
Description
Technical field
The present invention relates to LED encapsulation method technical field, particularly a kind of ultraviolet LED light source inorganic encapsulated method.
Background technology
Semiconductor lighting, as the lighting engineering of a new generation, has a lot of advantages: energy-saving and environmental protection, long-life, response are fast
Deng, development in recent years is very fast.
Ultraviolet LED specifically amasss little, life-span length and efficiency advantages of higher, is with a wide range of applications.Ultraviolet LED at present
Luminous power relatively low, in addition to the raising of chip manufacturing level, encapsulation technology also has important impact to the characteristic of LED.Mesh
Before, ultraviolet LED mainly has epoxy encapsulation and metal to encapsulate with glass lens.The former is mainly used in the near of about 400nm
Ultraviolet LED, but ultraviolet light is bigger on the aging impact of material.The latter is mainly used in the wavelength ultraviolet LED less than 380 nm, envelope
Package material is another importance of LED encapsulation technology.LED encapsulation material mainly has glass lens, epoxy resin and silicon tree
Fat etc..Quartz glass softening point temperature is 1600 DEG C, and hot processing temperature is 1700～2000 DEG C, from the angle of technique, quartz glass
Glass is not suitable for for sealing LED chip;Epoxy resin high-temperature heat-resistance performance is general, and the poor light extraction efficiency of ultraviolet-resistant performance is low,
Use the organic material of silica gel or epoxy resin etc, have the aging aspects such as yellow when receiving high temperature, therefore exist
State the problems such as organic material and light decay be serious.
Summary of the invention
The technical problem to be solved is to overcome the deficiencies in the prior art to provide a kind of ultraviolet LED light source inorganic
Method for packing, the inventive method can effectively reduce light decay.
The present invention solves above-mentioned technical problem by the following technical solutions:
A kind of ultraviolet LED light source inorganic encapsulated method proposed according to the present invention, comprises the following steps:
Step one, the offer substrate containing layer printed circuit board, substrate both sides are provided with support, and the top of support is ledge structure；
Step 2, vertical UV LED chip is fixed on substrate by inorganic adhesive；
Vertical UV LED chip is connected on electrode of substrate by step 3, employing gold thread；
Step 4, inorganic adhesive is spread upon on ledge structure；
Step 5, quartz lens is coated on the top of vertical UV LED chip, and at quartz lens and the ledge structure of support
Connect；Now obtain LED semi-finished product；
Step 6, LED semi-finished product are put into Reflow Soldering carry out bonding.
As a kind of ultraviolet LED light source further prioritization scheme of inorganic encapsulated method of the present invention, quartz lens with
It it is vacuum between vertical UV LED chip.
As a kind of ultraviolet LED light source further prioritization scheme of inorganic encapsulated method of the present invention, quartz lens with
Noble gas is used to be filled with between vertical UV LED chip.
As a kind of ultraviolet LED light source further prioritization scheme of inorganic encapsulated method of the present invention, noble gas is
Helium.
As a kind of ultraviolet LED light source further prioritization scheme of inorganic encapsulated method of the present invention, inorganic adhesive
For tin cream.
As a kind of ultraviolet LED light source further prioritization scheme of inorganic encapsulated method of the present invention, described quartz is saturating
Mirror is solid.
The present invention uses above technical scheme compared with prior art, has following technical effect that
(1) compared with traditional method for packing, the ultraviolet LED inorganic encapsulated method for designing that the present invention provides, aging light decay performance
Improve；
(2) degradation shows, conventional package uses epoxy encapsulation, and the luminous power of ultraviolet LED was decayed in 100 hours
To less than 50%, and the ultraviolet LED inorganic encapsulated method for designing that the present invention provides, after working 1000 hours continuously, luminous power depends on
So maintaining more than 98%, luminous power decay is less than 3%.
Accompanying drawing explanation
Fig. 1 is conventional packaging method COB(Chip on board) light-source structure schematic diagram.
Fig. 2 is conventional packaging method COB(Chip on board) light-source structure schematic diagram.
Fig. 3 is the method for the invention ultraviolet LED light source inorganic encapsulated method for designing schematic diagram.
Wherein, 1-quartz lens, 2-substrate, 3-vertical UV LED chip, 4-epoxy resin, 5-inorganic adhesive, 6-is lazy
Property gas.
Detailed description of the invention
Below in conjunction with the accompanying drawings technical scheme is described in further detail:
As shown in Figure 1 and Figure 2, it is all conventional packaging method COB(Chip on board) light-source structure schematic diagram, degradation table
Bright, conventional package uses epoxy encapsulation, and the luminous power of ultraviolet LED decayed to less than 50% in 100 hours.
Fig. 3 is the method for the invention ultraviolet LED light source inorganic encapsulated method for designing schematic diagram, a kind of ultraviolet LED light source
Inorganic encapsulated method, comprises the following steps:
Step one, the offer substrate containing layer printed circuit board, substrate both sides are provided with support, and the top of support is ledge structure；
Step 2, vertical UV LED chip is fixed on substrate by inorganic adhesive；
Vertical UV LED chip is connected on electrode of substrate by step 3, employing gold thread；
Step 4, inorganic adhesive is spread upon on ledge structure；
Step 5, quartz lens is coated on the top of vertical UV LED chip, and at quartz lens and the ledge structure of support
Connect；Now obtain LED semi-finished product；
Step 6, LED semi-finished product are put into Reflow Soldering carry out bonding.
It it is vacuum between quartz lens and vertical UV LED chip.
Noble gas is used to be filled with between quartz lens and vertical UV LED chip.
Noble gas is helium.
The principle of the present invention is, the performance in the event of high temperatures such as organic material such as silica gel can drastically change, and result in LED
The reduction of performance, gets rid of the participation of organic substance in full processing procedure, uses inorganic material, performance can be avoided drastically to decline, again
Reduce the light decay at LED；
The primary structure of silica gel includes that Si and 2O, main chain Si-O-Si are inorganic, and has higher bond energy (422. 5
kJ /mol);And the main chain of epoxy resin is mainly C-C or C-O, bond energy be respectively 356kJ/mol and 344. 4 kJ/
mol.At high temperature, the molecule link of organic material can be destroyed in time, causes the decay of material property.
In above-mentioned step, it is possible to use conventional die bond bonding wire craft, the inorganic adhesive of fixed wafer can use
Tin cream or other inorganic adhesive.
Inorganic adhesive can use tin cream or other inorganic adhesive；
Quartz lens is solid quartz glass lens, for the derivation of light, and forms certain optical field distribution；
In total, all will not use Organic substance.
Ultraviolet LED light source inorganic encapsulated method for designing provided by the present invention, the die bond in basic technology, the work such as bonding wire
Skill, die bond bonding wire is essentially identical with the technique of conventional packaging method, and follow-up sealing stage process is different, including:
Die bond: as it is shown on figure 3, vertical UV LED chip 3 be fixed on substrate 2, uses inorganic adhesive；
Bonding wire: as it is shown on figure 3, vertical UV LED chip use gold thread is connected with the circuit of substrate；
Seal: as it is shown on figure 3, in an inert atmosphere, be applied to inorganic adhesive, at support step, cover lens, and
Cross Reflow Soldering to weld.
Also can carry out under vacuum conditions, after pour noble gas；
Also can carry out under conventional environment, follow-up extraction air pours noble gas again.
Above content is to combine concrete preferred implementation further description made for the present invention, it is impossible to assert
Being embodied as of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of present inventive concept, it is also possible to make some simple deductions or replacement, all should be considered as belonging to the present invention's
Protection domain.
Claims (6)
1. a ultraviolet LED light source inorganic encapsulated method, it is characterised in that comprise the following steps:
Step one, the offer substrate containing layer printed circuit board, substrate both sides are provided with support, and the top of support is ledge structure；
Step 2, vertical UV LED chip is fixed on substrate by inorganic adhesive；
Vertical UV LED chip is connected on electrode of substrate by step 3, employing gold thread；
Step 4, inorganic adhesive is spread upon on ledge structure；
Step 5, quartz lens is coated on the top of vertical UV LED chip, and at quartz lens and the ledge structure of support
Connect；Now obtain LED semi-finished product；
Step 6, LED semi-finished product are put into Reflow Soldering carry out bonding.
A kind of ultraviolet LED light source inorganic encapsulated method the most according to claim 1, it is characterised in that quartz lens is with vertical
It is vacuum between straight UV LED chip.
A kind of ultraviolet LED light source inorganic encapsulated method the most according to claim 1, it is characterised in that quartz lens is with vertical
Noble gas is used to be filled with between straight UV LED chip.
A kind of ultraviolet LED light source inorganic encapsulated method the most according to claim 3, it is characterised in that noble gas is helium
Gas.
A kind of ultraviolet LED light source inorganic encapsulated method the most according to claim 1, it is characterised in that inorganic adhesive is
Tin cream.
A kind of ultraviolet LED light source inorganic encapsulated method the most according to claim 1, it is characterised in that described quartz lens
For solid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610756121.8A CN106299042A (en) | 2016-08-30 | 2016-08-30 | A kind of ultraviolet LED light source inorganic encapsulated method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610756121.8A CN106299042A (en) | 2016-08-30 | 2016-08-30 | A kind of ultraviolet LED light source inorganic encapsulated method |
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| Publication Number | Publication Date |
|---|---|
| CN106299042A true CN106299042A (en) | 2017-01-04 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610756121.8A Pending CN106299042A (en) | 2016-08-30 | 2016-08-30 | A kind of ultraviolet LED light source inorganic encapsulated method |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447967A (en) * | 2018-05-28 | 2018-08-24 | 易美芯光（北京）科技有限公司 | A kind of encapsulating structure of high power LED device |
| CN109103319A (en) * | 2018-08-21 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED encapsulation structure and its packaging method |
| CN114335297A (en) * | 2021-12-28 | 2022-04-12 | 北京大学东莞光电研究院 | Silk-screen packaging method for LED lens |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078533A (en) * | 2013-03-25 | 2014-10-01 | 江苏汉莱科技有限公司 | COB (Chip On Board) packaging body of LED (Light-Emitting Diode) light source, and preparation method of packaging body |
| CN204011471U (en) * | 2014-07-17 | 2014-12-10 | 陕西光电科技有限公司 | A kind of deep ultraviolet LED device encapsulation structure |
| CN105390592A (en) * | 2015-12-16 | 2016-03-09 | 江苏稳润光电有限公司 | Three-layer packaging method for ultraviolet LED light source |
-
2016
- 2016-08-30 CN CN201610756121.8A patent/CN106299042A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104078533A (en) * | 2013-03-25 | 2014-10-01 | 江苏汉莱科技有限公司 | COB (Chip On Board) packaging body of LED (Light-Emitting Diode) light source, and preparation method of packaging body |
| CN204011471U (en) * | 2014-07-17 | 2014-12-10 | 陕西光电科技有限公司 | A kind of deep ultraviolet LED device encapsulation structure |
| CN105390592A (en) * | 2015-12-16 | 2016-03-09 | 江苏稳润光电有限公司 | Three-layer packaging method for ultraviolet LED light source |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108447967A (en) * | 2018-05-28 | 2018-08-24 | 易美芯光（北京）科技有限公司 | A kind of encapsulating structure of high power LED device |
| CN109103319A (en) * | 2018-08-21 | 2018-12-28 | 华中科技大学鄂州工业技术研究院 | A kind of deep ultraviolet LED encapsulation structure and its packaging method |
| CN114335297A (en) * | 2021-12-28 | 2022-04-12 | 北京大学东莞光电研究院 | Silk-screen packaging method for LED lens |
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Application publication date: 20170104 |
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