CN210743971U - Deep ultraviolet LED device - Google Patents
Deep ultraviolet LED device Download PDFInfo
- Publication number
- CN210743971U CN210743971U CN201921741330.0U CN201921741330U CN210743971U CN 210743971 U CN210743971 U CN 210743971U CN 201921741330 U CN201921741330 U CN 201921741330U CN 210743971 U CN210743971 U CN 210743971U
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- China
- Prior art keywords
- ultraviolet led
- deep ultraviolet
- substrate
- lens
- led device
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000003466 welding Methods 0.000 claims abstract description 25
- 238000003756 stirring Methods 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 10
- 238000004806 packaging method and process Methods 0.000 abstract description 7
- 239000011368 organic material Substances 0.000 abstract description 6
- 238000006303 photolysis reaction Methods 0.000 abstract description 4
- 238000004925 denaturation Methods 0.000 abstract description 3
- 230000036425 denaturation Effects 0.000 abstract description 3
- 230000015843 photosynthesis, light reaction Effects 0.000 abstract description 3
- 239000000741 silica gel Substances 0.000 abstract description 3
- 229910002027 silica gel Inorganic materials 0.000 abstract description 3
- 238000005538 encapsulation Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003292 glue Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910016338 Bi—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- Led Device Packages (AREA)
Abstract
The utility model discloses a deep ultraviolet LED device, deep ultraviolet LED device includes: the substrate is provided with a positive electrode and a negative electrode, and a box dam is arranged on the substrate; the deep ultraviolet LED chip is fixed on the substrate and is connected with the positive electrode and the negative electrode on the substrate; the periphery of the lens is provided with a frame matched with the box dam; the lens is buckled in the box dam of the substrate through the frame, and an inner cavity for containing the deep ultraviolet LED chip is formed. The lens with the frame and the substrate with the box dam are connected by the welding line formed by friction stir welding, so that airtight packaging is realized, organic materials such as organic silica gel are not used, and all-inorganic packaging is realized. The welding process is only local high temperature, the crystal fixing quality is not influenced and the chip is not damaged due to overhigh temperature, the problem of photolysis denaturation of organic materials under the irradiation of the deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and the reliability of the LED are improved.
Description
Technical Field
The utility model relates to a semiconductor light emitting device packaging technology, in particular to deep ultraviolet LED device.
Background
The UV LED (ultraviolet light emitting diode) is a light emitting diode with a light emitting center wavelength less than 400nm, and has the advantages of no mercury pollution, long service life, no need of preheating, instant starting, no influence of switching frequency on and off on the service life and the like, so that the UV LED is widely applied to anti-counterfeiting technologies, ink curing, exposure machines, medical phototherapy, sterilization and disinfection and the like.
The near ultraviolet LED (wavelength of 300-. However, groups such as carboxyl (-COOH) groups contained in organic glue are easily photolyzed under the irradiation of deep ultraviolet light with the wavelength of less than 300nm, so that the glue is denatured and decomposed, thereby affecting light emission or damaging a chip. Therefore, the silicone glue package is not suitable for deep ultraviolet LED package. Another method is to adopt soldering techniques such as soldering, etc., and the whole soldering part and the solder are required to be heated to a certain temperature (melting point of the solder), which will simultaneously make the temperature of other parts of the soldering part reach a high temperature, which is easy to affect the quality of die bonding, and more serious, the deep ultraviolet LED chip will be burned out due to the high temperature, so a new packaging technique is required to support the packaging of the deep ultraviolet LED.
SUMMERY OF THE UTILITY MODEL
The utility model discloses aim at solving one of the technical problem that exists among the prior art at least. Therefore, the utility model provides a dark ultraviolet LED device can avoid glue photodissociation and high temperature to influence.
According to the utility model discloses deep ultraviolet LED device of first aspect embodiment, include:
the device comprises a substrate with positive and negative electrodes, wherein a box dam is arranged on the substrate;
the deep ultraviolet LED chip is fixed on the substrate and is connected with the positive electrode and the negative electrode on the substrate;
the periphery of the lens is provided with a frame matched with the box dam; the lens is buckled in the box dam of the substrate through the frame, and an inner cavity for containing the deep ultraviolet LED chip is formed;
and the welding seam formed by friction stir welding is used for sealing and connecting the gap between the box dam and the frame.
According to the utility model discloses deep ultraviolet LED device of first embodiment has following beneficial effect at least: the lens with the frame and the substrate with the box dam are connected by the welding line formed by friction stir welding, so that airtight packaging is realized, organic materials such as organic silica gel are not used, and all-inorganic packaging is realized. The welding process is only local high temperature, the crystal fixing quality is not influenced and the chip is not damaged due to overhigh temperature, the problem of photolysis denaturation of organic materials under the irradiation of the deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and the reliability of the LED are improved. In view of the above various advantages of the utility model discloses combine the actual conditions of ultraviolet LED encapsulation, the utility model discloses the disclosed LED device is also applicable to the encapsulation of whole ultraviolet band LED device equally.
According to some embodiments of the present invention, the substrate has a groove thereon, the groove and constitute between the lens the inner chamber, the deep ultraviolet LED chip is located in the groove.
According to some embodiments of the present invention, the deep ultraviolet LED chip is fixed to the substrate through the die bond layer.
According to some embodiments of the invention, the solidified layer is a lead-free solder paste.
According to some embodiments of the utility model, solid crystal layer is electrically conductive solid crystal layer, still is used for deep ultraviolet LED chip with positive negative electrode on the base plate is connected.
According to some embodiments of the present invention, the deep ultraviolet LED chip is electrically connected to the positive and negative electrodes on the substrate through wires.
According to some embodiments of the invention, the lens is a planar quartz glass lens or a hemispherical quartz glass lens.
According to some embodiments of the invention, the inner chamber is filled with an inert gas, nitrogen, a neutral liquid or evacuated.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
fig. 1 is a schematic diagram of a deep ultraviolet LED device package according to a first embodiment of the present invention;
fig. 2 is a schematic diagram of a deep ultraviolet LED device package according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a substrate with grooves and a metal dam at the top edge;
fig. 4 is a schematic view of a planar quartz glass lens with a metal frame according to an embodiment of the present invention;
FIG. 5 is a schematic view of a hemispherical quartz glass lens according to an embodiment of the present invention;
FIG. 6 is a top view of a quartz glass lens with a metal bezel;
FIG. 7 is a schematic illustration of friction stir welding.
Reference numerals:
a substrate 100, a dam 110, a groove 120, a wire 130,
A deep ultraviolet LED chip 200,
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.
In the description of the present invention, it should be understood that the orientation or positional relationship indicated with respect to the orientation description, such as up, down, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, unless there is an explicit limitation, the words such as setting, installation, connection, etc. should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above words in combination with the specific contents of the technical solution.
Referring to fig. 1 and fig. 2, a deep ultraviolet LED device according to two embodiments of the present disclosure includes:
a substrate 100 having positive and negative electrodes, the substrate 100 having a dam 110 disposed thereon, as shown in fig. 3; the preferential box dam 110 is a metal box dam, and the metal box dam can be made of copper alloy;
a deep ultraviolet LED chip 200, the deep ultraviolet LED chip 200 being fixed on the substrate 100 and connected to positive and negative electrodes (not shown) on the substrate 100; the deep ultraviolet LED chip 200 is an ultraviolet LED chip with a light-emitting center wavelength of less than 300nm, and the deep ultraviolet LED chip of the present embodiment preferably adopts an ultraviolet LED chip with a light-emitting center wavelength of 265 nm;
a lens 300, the lens 300 being peripherally provided with a rim 310 adapted to the dam 110, as shown in fig. 4-6; the lens 300 is fastened in the dam 110 of the substrate 100 through the frame 310, and forms an inner cavity for accommodating the deep ultraviolet LED chip 200;
a weld 400, formed by friction stir welding, is used to seal the gap between the connecting box dam 110 and the bezel 310, as shown in fig. 7.
According to the utility model discloses deep ultraviolet LED device of first embodiment adopts friction stir welding fashioned welding seam 400 to couple together taking frame 310's lens 300 and being equipped with the base plate 100 of box dam 110, has realized the gas tightness encapsulation to organic material such as organic silica gel has not been used, has realized full inorganic encapsulation. The welding process is only local high temperature, the crystal fixing quality is not influenced and the chip is not damaged due to overhigh temperature, the problem of photolysis denaturation of organic materials under the irradiation of the deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and the reliability of the LED are improved. In view of the above various advantages of the utility model discloses combine the actual conditions of ultraviolet LED encapsulation, the utility model discloses the disclosed LED device is also applicable to the encapsulation of whole ultraviolet band LED device equally.
In some embodiments of the present invention, the substrate 100 has a groove 120 thereon, an inner cavity is formed between the groove 120 and the lens 300, and the deep ultraviolet LED chip 200 is located in the groove 120.
In some embodiments of the present invention, the substrate 100 is a ceramic substrate, a glass fiber board, or a composite substrate 100. The ceramic substrate material may be an alumina or aluminum nitride ceramic.
In some embodiments of the present invention, the deep ultraviolet LED chip 200 is fixed to the substrate 100 through a solid crystal layer (not shown). Furthermore, the solid crystal layer is lead-free tin paste, and the main component of the solid crystal layer is Ag-Bi-Sn alloy.
In some embodiments of the present invention, the solid crystal layer is a conductive solid crystal layer, and is also used for connecting the deep ultraviolet LED chip 200 with the positive and negative electrodes on the substrate 100, so as to omit the conventional wire 130 for connecting the electrodes.
In some embodiments of the present invention, the deep ultraviolet LED chip 200 is electrically connected to the positive and negative electrodes on the substrate 100 through the wires 130, and the wires 130 may be common wires 130 such as gold wires, silver wires, copper wires, or alloy wires 130.
In some embodiments of the present invention, the lens 300 is a planar quartz glass lens 300 or a hemispherical quartz glass lens 300, as shown in fig. 4 and 5, respectively, wherein the planar quartz glass lens 300 is mainly matched with the substrate 100 with the groove 120, and the hemispherical quartz glass lens 300 can be used with both the substrate 100 with the groove 120 and the substrate 100 without the groove 120.
In some embodiments of the present invention, the inner cavity is filled with inert gas, nitrogen, neutral liquid or vacuumized, so as to further improve the air tightness and protect the deep ultraviolet LED chip 200.
The utility model discloses still include the embodiment of on the other hand, a deep ultraviolet LED device packaging method, including following step:
fixing the deep ultraviolet LED chip 200 on the substrate 100 and connecting the deep ultraviolet LED chip with the positive and negative electrodes on the substrate 100;
the lens 300 is buckled in the box dam 110 on the substrate 100 through the frame 310, a gap is formed between the box dam 110 and the frame 310, and an inner cavity for accommodating the deep ultraviolet LED chip 200 is formed between the lens 300 and the substrate 100;
a friction stir welding process is used to form a weld 400 between dam 110 and bezel 310 for sealing the gap, as shown in fig. 7.
The friction stir Welding technique adopted by The embodiment of The utility model is a relatively mature Welding technique, which is a utility model in 1991 by The british Welding Institute (The Welding Institute, TWI for short), and is widely applied to The Welding of parts such as automobiles, airplanes, ship boards, rockets and The like. The core component is a stirring pin rotating at high speed, the welding principle is that the rotating stirring pin generates heat by friction with solder, so that the temperature of materials at the connecting part is increased and softened, the materials in front of a welding head generate strong plastic deformation, and then the materials with high plastic deformation are gradually deposited at the back of the stirring head along with the movement of the welding head, so that a friction stir welding seam is formed.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (8)
1. A deep ultraviolet LED device, comprising:
the device comprises a substrate with positive and negative electrodes, wherein a box dam is arranged on the substrate;
the deep ultraviolet LED chip is fixed on the substrate and is connected with the positive electrode and the negative electrode on the substrate;
the periphery of the lens is provided with a frame matched with the box dam; the lens is buckled in the box dam of the substrate through the frame, and an inner cavity for containing the deep ultraviolet LED chip is formed;
and the welding seam formed by friction stir welding is used for sealing and connecting the gap between the box dam and the frame.
2. The deep ultraviolet LED device of claim 1, wherein the substrate has a groove, the groove and the lens form the inner cavity therebetween, and the deep ultraviolet LED chip is located in the groove.
3. The deep ultraviolet LED device of claim 1 or 2, wherein the deep ultraviolet LED chip is fixed to the substrate by a die attach layer.
4. The deep ultraviolet LED device of claim 3, wherein the solid crystal layer is lead-free solder paste.
5. The deep ultraviolet LED device of claim 3, wherein the solid crystal layer is a conductive solid crystal layer, and is further used for connecting the deep ultraviolet LED chip with positive and negative electrodes on the substrate.
6. The deep ultraviolet LED device of claim 1, wherein the deep ultraviolet LED chip is electrically connected to the positive and negative electrodes on the substrate by wires.
7. The deep ultraviolet LED device of claim 1, wherein the lens is a planar quartz glass lens or a hemispherical quartz glass lens.
8. The deep ultraviolet LED device of claim 1, wherein the cavity is filled with an inert gas, nitrogen, a neutral liquid, or evacuated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921741330.0U CN210743971U (en) | 2019-10-16 | 2019-10-16 | Deep ultraviolet LED device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921741330.0U CN210743971U (en) | 2019-10-16 | 2019-10-16 | Deep ultraviolet LED device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210743971U true CN210743971U (en) | 2020-06-12 |
Family
ID=71011109
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921741330.0U Expired - Fee Related CN210743971U (en) | 2019-10-16 | 2019-10-16 | Deep ultraviolet LED device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210743971U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707199A (en) * | 2019-10-16 | 2020-01-17 | 五邑大学 | Deep ultraviolet LED device and packaging method thereof |
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2019
- 2019-10-16 CN CN201921741330.0U patent/CN210743971U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110707199A (en) * | 2019-10-16 | 2020-01-17 | 五邑大学 | Deep ultraviolet LED device and packaging method thereof |
| CN110707199B (en) * | 2019-10-16 | 2024-03-26 | 五邑大学 | Deep ultraviolet LED device and packaging method thereof |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200612 |