CN219246707U - All-inorganic LED packaging structure - Google Patents

All-inorganic LED packaging structure Download PDF

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Publication number
CN219246707U
CN219246707U CN202320148419.6U CN202320148419U CN219246707U CN 219246707 U CN219246707 U CN 219246707U CN 202320148419 U CN202320148419 U CN 202320148419U CN 219246707 U CN219246707 U CN 219246707U
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light
layer
packaging
inorganic
circuit
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成鹏
柯有谱
张妮
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Shenzhen Jufei Optoelectronics Co Ltd
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Shenzhen Jufei Optoelectronics Co Ltd
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Priority to PCT/CN2023/116314 priority patent/WO2024046441A1/en
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Abstract

The utility model is suitable for the technical field of LED packaging, and provides an all-inorganic LED packaging structure which comprises a packaging substrate, an LED chip and a light-transmitting cover, wherein the packaging substrate is provided with a front surface and a back surface which are opposite, a welding layer is arranged at the bottom of the light-transmitting cover, a first circuit layer is arranged on the front surface of the packaging substrate, the first circuit layer comprises a first circuit pattern used for being connected with the welding layer, the first circuit layer further comprises a bonding pad used for being welded with the LED chip, a sealed packaging cavity is formed between the light-transmitting cover and the packaging substrate, and the LED chip is arranged in the packaging cavity and welded on the bonding pad. The all-inorganic LED packaging structure provided by the utility model can use an all-inorganic packaging process, avoids risks of yellowing colloid and lens falling in organic packaging and semi-inorganic packaging, simultaneously allows light to pass through both the side surface and the front surface of the light-passing cover, improves the light-emitting efficiency of the LED, and has high reliability.

Description

All-inorganic LED packaging structure
Technical Field
The utility model belongs to the technical field of LED packaging, and particularly relates to an all-inorganic LED packaging structure.
Background
In the LED packaging industry, particularly in the UV-LED products with the peak wavelength below 350nm, due to the low luminous efficiency of the chip, how to improve the luminous efficiency of the package is always a problem of important research in the industry. At present, most of UV-LED products with peak wavelength below 350nm in the market are front light-emitting schemes, and few multi-face light-emitting schemes exist. The front light-emitting scheme adopted in the prior art has high light loss rate, and the light utilization rate is far lower than that of the five-face light-emitting scheme.
In the prior art, three common UV-LED packaging process structures are respectively organic packaging, semi-inorganic packaging and full-inorganic packaging.
As shown in fig. 1, the organic package is made of an organic material such as silicone, or epoxy, and the bonding of the lens 91 and the substrate 92 is achieved by molding or dispensing. As shown in fig. 2, the semi-inorganic package is bonded to the substrate 95 by means of adhesion using an organic silicon material 93 and an inorganic material such as a glass lens 94. In the organic and semi-inorganic packaging processes, the organic material (the lens 91 in fig. 1, the silicone material 93 in fig. 2) may yellow and lose viscosity under UV light irradiation, especially, it is particularly apparent that after the organic material yellow and loses viscosity under UV light having a peak wavelength of 350nm, the lens 91 and the glass lens 94 in the semi-inorganic packaging process formed by using a molding (molding) process or a dispensing process in the organic packaging process may be at risk of falling off, thereby causing the reliability of the UV-LED device to be deteriorated and failed.
As shown in fig. 3, the bonding of the lens 96 and the substrate 98 is achieved by laser welding, wave soldering, resistance welding, etc. without using organic materials throughout the inorganic package. The all-inorganic package does not adopt organic materials, so that the risk of lens falling off is avoided after the all-inorganic package is subjected to UV illumination, and the reliability is high. At present, as shown in fig. 3, most of the existing full inorganic packaging technology adopts a packaging structure of plane ceramic and metal pipe cap 97, or adopts a packaging structure of ceramic surrounding dams, the packaging structure can only emit light from the front, and the surrounding light can not be emitted due to shielding by the ceramic surrounding dams or the metal pipe cap 97, so that the light efficiency is relatively low.
In three UV-LED packaging processes commonly used in the market at present, only organic packaging can realize five-sided light emission, but the organic packaging is not suitable for products with peak wavelength below 350nm.
Disclosure of Invention
The utility model aims to overcome the defects of the prior art, and provides an all-inorganic LED packaging structure which is relatively high in light efficiency and good in reliability.
The technical scheme of the utility model is as follows: the utility model provides an all inorganic LED packaging structure, includes package substrate, LED chip and printing opacity cover, package substrate has relative front and back, the bottom of printing opacity cover is provided with the welding layer, package substrate's front is provided with first circuit layer, first circuit layer including be used for with the first circuit figure that the welding layer meets, first circuit layer still including be used for with LED chip welded pad.
Optionally, the light-transmitting cover covers the top surface and the side surfaces of the LED chip.
Optionally, the light-transmitting cover includes a top light-emitting surface and four side light-emitting surfaces.
Optionally, the welding layer is a metal layer formed at the bottom of the light-transmitting cover in an electroplating way; the first circuit pattern is a metal layer formed on the front surface of the packaging substrate in an electroplating way.
Optionally, the welding layer is glass solder formed at the bottom of the light-transmitting cover; the first circuit pattern is a metal layer formed on the front surface of the packaging substrate in an electroplating way.
Optionally, the height of the bottom of the light-transmitting cover is equal to or lower than the bottom of the LED chip.
Optionally, the metal layer is a eutectic metal layer; alternatively, the metal layer is a non-eutectic metal layer.
Optionally, the shape of the first circuit pattern is a closed shape, and the welding layer is connected with the first circuit pattern to form a welding area with the closed shape;
or the shape of the first circuit pattern is a semi-closed shape, and the welding layer is connected with the first circuit pattern to form a welding area with the semi-closed shape.
Optionally, the longitudinal section shape of the light-transmitting cover is "n".
Optionally, a second circuit layer is arranged on the back surface or/and the inside of the packaging substrate;
the bonding pad is communicated with the second circuit layer through a conductive hole arranged on the packaging substrate.
The all-inorganic LED packaging structure provided by the utility model avoids the risks of yellowing of colloid and falling of lenses in organic packaging and semi-inorganic packaging, simultaneously the side surface and the front surface of the light-transmitting cover can transmit light, the light-emitting efficiency of an LED is improved, the reliability is high, the light-transmitting cover can adopt inorganic glass materials as glass lenses without using organic materials, no colloid is needed, the light-transmitting cover has no risk of yellowing and falling, the defects that the organic materials can yellow and lose viscosity under the irradiation of UV light with the wavelength of below 350nm are avoided, and the all-inorganic LED packaging structure has obvious advantages in the UV-LED products with the peak wavelength of below 350nm, and has high product reliability and good user experience.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of an organic package structure provided in the prior art;
FIG. 2 is a schematic cross-sectional view of a semi-inorganic package structure provided in the prior art;
FIG. 3 is a schematic cross-sectional view of an all-inorganic package structure provided in the prior art;
FIG. 4 is a schematic cross-sectional view of an embodiment of an inorganic package structure;
fig. 5 is a schematic cross-sectional view of an all-inorganic package structure according to an embodiment of the present utility model.
Detailed Description
The present utility model will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present utility model more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the utility model.
It will be understood that when an element is referred to as being "mounted" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present.
It should be noted that, in the embodiments of the present utility model, terms such as left, right, up, and down are merely relative concepts or references to normal use states of the product, and should not be construed as limiting.
As shown in fig. 4 and 5, the embodiment of the utility model provides an all-inorganic LED package structure, which includes a package substrate 100, an LED chip 200 and a light-transmitting cover 300, where the package substrate 100 has a front surface 101 and a back surface 102 opposite to each other, the front surface 101 of the package substrate 100 is provided with a first circuit layer 110, the first circuit layer 110 includes a first circuit pattern 111 and a bonding pad 112, and the bonding pad 112 is used for welding with the LED chip 200. The bottom of the transparent cover 300 is provided with a welding layer 350, the welding layer 350 is welded with the first circuit pattern 111, a sealed package cavity is formed between the transparent cover 300 and the package substrate 100, the LED chip 200 is disposed in the package cavity and welded to the bonding pad 112, the top surface and the peripheral side of the transparent cover 300 can transmit light, the welding layer 350 disposed at the bottom of the transparent cover 300 can be tightly combined with the first circuit pattern 111 of the package substrate 100, the combination is reliable, the package structure in the embodiment can not adopt organic materials such as silica gel, silicone or epoxy resin, an all-inorganic package process can be used, the risk of dropping of a colloid yellowing lens in the organic package and the semi-inorganic package is avoided, meanwhile, when the side surface and the front surface of the transparent cover 300 are both transparent, the package structure can realize five-sided (when the transparent cover 300 is rectangular), the light-emitting efficiency of the UV-LED package is greatly improved, and the reliability is high, and the disadvantages that the organic materials can not lose the Ultraviolet (UV) light can not be radiated under the irradiation of the organic materials such as the wavelength of 350nm can be avoided. The all-inorganic LED packaging structure provided by the embodiment has obvious advantages in UV-LED products with the peak wavelength below 350nm, the light-transmitting cover 300 can be made of inorganic glass materials, and the welding layer 350 arranged at the bottom of the light-transmitting cover 300 enables the light-transmitting cover 300 and the substrate 100 to be welded together, so that the light-transmitting cover 300 and the substrate 100 are tightly combined, the risks of yellowing and falling off are avoided, the reliability of the products is high, and the user experience is good.
Specifically, the light-transmitting cover 300 may be a glass lens, the soldering layer 350 may be a metal layer (i.e. metal solder) formed on the bottom of the light-transmitting cover 300 by electroplating, and the first circuit pattern 111 may be a metal layer formed on the front surface 101 of the package substrate 100 by electroplating, which has low production cost; in other embodiments, the soldering layer 350 may be glass solder formed on the bottom of the transparent cover 300, and the first circuit pattern 111 may be a metal layer formed on the front surface 101 of the package substrate 100 by electroplating, and the transparent cover 300 is soldered on the first circuit pattern by a glass solder and metal sealing technology, so that the light transmittance is good, and the light blocking effect of the soldering layer 350 on the LED chip is reduced. The solder layer 350 may cover the bottom surface of the transparent cover 300, and of course, the solder layer 350 may also extend to a set distance between the inner and outer sides of the transparent cover 300. The first circuit pattern in this embodiment is used for soldering with the light-transmitting cover 300 and is not used for conduction.
Specifically, the light-transmitting cover 300 covers the top surface and the side surface of the LED chip, and both the top surface and the side surface can emit light, so that the light-emitting effect is good. In this embodiment, the light-transmitting cover 300 includes a top light-emitting surface and four side light-emitting surfaces, and the light-transmitting cover 300 may have a rectangular (square) shape, so as to achieve the effect of light-emitting from five sides.
Specifically, the package substrate 100 may be a ceramic substrate, which has good reliability and low application cost.
In particular, the metal layer (solder layer 350) may be a eutectic metal layer; alternatively, the metal layer is a non-eutectic metal layer. When the metal layer is a eutectic metal layer, the metal layer may be connected to the first circuit pattern 111 by a eutectic welding process, and the reliability of welding is high. When the metal layer is a non-eutectic metal layer, the light-transmitting cover 300 (glass lens) and the packaging substrate 100 (ceramic substrate) can be tightly combined by adopting a reflow soldering or high-temperature baking mode, so that an all-inorganic packaging process can be realized, and even if the all-inorganic LED packaging structure is applied to a UV-LED product, the glass lens does not have the risk of falling off.
Specifically, the metal layer may be a gold-tin alloy layer, a silver layer, or the like, which has high reliability and good soldering effect with the first line pattern 111.
Specifically, the light-transmitting cover 300 may be a quartz glass cover or a sapphire glass cover, which has good light transmission. The light-transmitting cover 300 may have a rectangular or circular shape, and the front surface thereof may have a planar or convex spherical shape.
Specifically, the first circuit pattern 111 is a metal layer formed on the front surface of the package substrate 100 by electroplating, and is easy to manufacture.
Specifically, the shape of the first circuit pattern 111 is a closed shape, and the bonding layer 350 is connected to the first circuit pattern 111 to form a bonding area with a closed shape; the first circuit pattern 111 may be rectangular ring-shaped, the light-transmitting cover 300 may be rectangular in shape, the bottom surface of the light-transmitting cover 300 may be correspondingly rectangular ring-shaped, and the solder layer 350 at the bottom edge of the light-transmitting cover 300 may be just seated on the first circuit pattern 111. The bottom edge of the transparent cover 300 may be completely seated over the first circuit pattern 111, i.e., the projection area of the bottom edge of the transparent cover 300 on the front surface 101 of the package substrate 100 may completely fall within the range of the first circuit pattern 111.
Alternatively, the shape of the first circuit pattern 111 may be a semi-closed shape, and the bonding layer 350 is connected to the first circuit pattern 111 to form a semi-closed bonding area.
Specifically, the solder layer 350 may be glass solder formed on the bottom of the light-transmitting cover 300, and may be connected by a glass solder and metal sealing technique, so that the product reliability is good.
Specifically, the longitudinal section of the light-transmitting cover 300 is "n" shaped, and the light-transmitting cover 300 may form a five-sided light-emitting structure. Of course, the light-transmitting cover 300 may have a polygonal shape, a rounded shape (as shown in fig. 5), or the like.
Specifically, the height of the bottom of the light-transmitting cover 300 may be equal to or lower than the bottom of the LED chip 200, so as to avoid the welding layer 350 at the bottom of the light-transmitting cover 300 from shielding the light of the LED chip 200, which is beneficial to further improving the light efficiency.
Specifically, the back surface 102 or/and the inside of the package substrate 100 is provided with a second circuit layer 120; the bonding pad 112 is connected to the second circuit layer 120 through a conductive hole (filled with a conductive material 130) disposed on the package substrate 100, so as to meet the wiring requirement of the circuit. In this embodiment, the second circuit layer 120 is disposed on the back surface 102 of the package substrate 100, the package substrate 100 is made of a ceramic substrate by DPC (direct copper plating technique: direct Plating Copper), and circuits are disposed on the surface and the back, and the bonding pads 112 of the surface circuit (the first circuit layer 110) and the back circuit (the second circuit layer 120) can be connected through internal conductive holes.
In this embodiment, the LED chip 200 may be a flip chip, and the electrodes of the flip chip may be gold-tin alloy or the like.
The utility model also provides an all-inorganic LED packaging method for packaging the all-inorganic LED packaging structure, which comprises the following steps:
preparing an LED chip 200, a package substrate 100 having a first line pattern 111 and a pad 112 on the front side, and a light-transmitting cover 300 having a solder layer 350 on the bottom;
LED chip welding: the LED chip 200 is disposed on the front surface 101 of the package substrate 100 and soldered to the bonding pad 112;
a step of fixing the light-transmitting cover: the light-transmitting cover 300 is covered on the LED chip 200, and the soldering layer 350 at the bottom of the light-transmitting cover 300 is seated on the first circuit pattern 111, so that the soldering layer 350 is connected with the first circuit pattern 111 through soldering or baking process.
Specifically, the pad 112 is made of a gold-tin alloy, and the first circuit pattern 111 may be plated with a nickel-gold layer, wherein the thickness of the nickel layer is greater than 3um, and the thickness of the gold layer is greater than 0.05um.
In this embodiment, the step of soldering the LED chip 200 includes a chip die bonding step and a eutectic step.
Specifically, the chip die bonding step includes: a flux capable of acting as a eutectic medium is disposed on the front surface 101 of the package substrate 100, and then the LED chip 200 is fixed to the front surface 101 of the package substrate 100 where the flux is located.
Specifically, the eutectic step includes: the LED chip 200 is placed in a eutectic furnace along with the package substrate 100 for eutectic soldering, at least one temperature zone of the eutectic furnace is 300-340 ℃, and the eutectic furnace is protected by nitrogen during eutectic process.
Specifically, the light-transmitting cover fixing step includes: solder is disposed on the first circuit layer 110, and the light-transmitting cover 300 is covered on the first circuit pattern 111 of the first circuit layer 110.
In a specific application, the solder layer 350 may be a gold-tin alloy, and the soldering flux is used as solder and is fixed to the first circuit pattern 111 through a eutectic soldering process.
Alternatively, the solder layer 350 may be a gold-tin alloy, and a silver paste or a solder paste is used as a solder and is fixed to the first circuit pattern 111 through a high temperature baking process or a reflow process.
Alternatively, the solder layer 350 may be a non-eutectic metal, and is soldered with silver paste or solder paste and fixed to the first circuit pattern 111 through a high temperature baking process or a reflow process.
Specifically, the peak wavelength of the LED chip 200 is less than 350nm.
In specific applications, the method for packaging the all-inorganic LED can be referred as follows:
LED chip bonding step (also referred to as chip die bonding step): the wires (including at least the first wire layer 110) of the package substrate 100 (ceramic substrate) may be plated with a nickel-gold plating layer, which may have a thickness of more than 3um, and a thickness of more than 0.05um. Dispensing flux on the first circuit layer 110 of the front surface 101 of the package substrate 100, positioning the LED chip 200 at the position with flux, and making the electrode correspond to the pad 112 (the pad 112 may be gold tin alloy), so that the LED chip 200 is fixed to the package substrate 100; when eutectic soldering is used, the flux may act as a eutectic medium, and the LED chip 200 may be closely bonded to the bonding pad 112.
Eutectic welding: the package substrate 100 to which the LED chip 200 is fixed is subjected to eutectic soldering by a eutectic furnace, so that the LED chip 200 and the package substrate 100 are firmly bonded. Wherein the temperature of the eutectic furnace is at least one temperature zone and is 300-340 ℃, and protective gas (such as nitrogen and other inert gases) is introduced in the eutectic welding process, so that the welding quality is more reliable.
Cover glass lens step: solder is dispensed on the first circuit layer 110 on the surface of the package substrate 100 at the contact point with the glass lens (the light-transmitting cover 300), and the glass lens is covered on the surface of the package substrate 100;
and (3) welding: the ceramic substrate covered with the glass lens is baked in a eutectic furnace, reflow soldering or high temperature, so that the glass lens and the ceramic substrate are tightly combined; (if the electroplated metal at the bottom of the glass lens is gold-tin alloy, the soldering can be performed by using a eutectic process, the solder is soldering flux, or a high-temperature baking or reflow soldering mode, the solder is silver paste or tin paste, and if the electroplated metal at the bottom of the glass lens is silver or other non-eutectic metals, the soldering can be performed only by using the high-temperature baking or reflow soldering mode, and the solder is silver paste or tin paste).
According to the all-inorganic LED packaging structure provided by the embodiment of the utility model, organic materials such as silica gel, silicon resin or epoxy resin can be omitted, an all-inorganic packaging process can be used, the risks of falling off of a colloid yellowing lens in organic packaging and semi-inorganic packaging are avoided, meanwhile, the side surface and the front surface of the light-transmitting cover 300 can transmit light, when the side surface of the light-transmitting cover 300 is four, the packaging structure can realize light emitting of five surfaces (when the light-transmitting cover 300 is rectangular), the light emitting efficiency of the UV-LED packaging is greatly improved, the reliability is high, and the defects that the organic material can yellow and lose viscosity under the irradiation of UV light with the wavelength of 350nm are avoided because the organic material is not used. The all-inorganic LED packaging structure provided by the embodiment has obvious advantages in UV-LED products with the peak wavelength below 350nm, the light-transmitting cover 300 can adopt inorganic glass materials as glass lenses, the glass lenses have no yellowing and falling risks, the product reliability is high, and the user experience is good.
The foregoing description of the preferred embodiments of the utility model is not intended to be limiting, but rather is intended to cover all modifications, equivalents, or alternatives falling within the spirit and principles of the utility model.

Claims (10)

1. The utility model provides an all inorganic LED packaging structure, its characterized in that, includes package substrate, LED chip and printing opacity cover, package substrate has relative front and back, the bottom of printing opacity cover is provided with the welding layer, package substrate's front is provided with first circuit layer, first circuit layer including be used for with the first circuit figure that the welding layer meets, first circuit layer still including be used for with LED chip welded pad, printing opacity cover with be formed with sealed encapsulation chamber between the package substrate, the LED chip set up in encapsulation intracavity and weld in the pad.
2. An all-inorganic LED package structure of claim 1, wherein said light transmissive cover covers the top and side surfaces of said LED chip.
3. The all-inorganic LED package structure of claim 1, wherein the light-transmissive cover comprises a top light-emitting surface and four side light-emitting surfaces.
4. The packaging structure of claim 1, wherein the soldering layer is a metal layer formed on the bottom of the transparent cover by electroplating; the first circuit pattern is a metal layer formed on the front surface of the packaging substrate in an electroplating way.
5. The all-inorganic LED package structure of claim 1, wherein said solder layer is glass solder formed on the bottom of said light transmissive cover; the first circuit pattern is a metal layer formed on the front surface of the packaging substrate in an electroplating way.
6. An all-inorganic LED package structure according to claim 1, wherein the height of the bottom of the light-transmitting cover is equal to or lower than the bottom of the LED chip.
7. The all-inorganic LED package structure of claim 4, wherein said metal layer is a eutectic metal layer; alternatively, the metal layer is a non-eutectic metal layer.
8. The package structure of claim 1, wherein the first circuit pattern has a closed shape, and the bonding layer is connected to the first circuit pattern to form a bonding area of the closed shape;
or the shape of the first circuit pattern is a semi-closed shape, and the welding layer is connected with the first circuit pattern to form a welding area with the semi-closed shape.
9. An all-inorganic LED package structure according to claim 1, wherein the light-transmitting cover has an "n" shape in longitudinal cross-section.
10. The all-inorganic LED package structure according to claim 1, wherein a second circuit layer is arranged on the back surface or/and the inside of the package substrate;
the bonding pad is communicated with the second circuit layer through a conductive hole arranged on the packaging substrate.
CN202320148419.6U 2022-08-31 2023-01-13 All-inorganic LED packaging structure Active CN219246707U (en)

Priority Applications (2)

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CN202320148419.6U CN219246707U (en) 2023-01-13 2023-01-13 All-inorganic LED packaging structure
PCT/CN2023/116314 WO2024046441A1 (en) 2022-08-31 2023-08-31 Packaging structure, led device, and packaging method

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CN202320148419.6U CN219246707U (en) 2023-01-13 2023-01-13 All-inorganic LED packaging structure

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CN219246707U true CN219246707U (en) 2023-06-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024046441A1 (en) * 2022-08-31 2024-03-07 惠州市聚飞光电有限公司 Packaging structure, led device, and packaging method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024046441A1 (en) * 2022-08-31 2024-03-07 惠州市聚飞光电有限公司 Packaging structure, led device, and packaging method

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