CN104681691A - Low-light attenuation flip chip-packaging LED (light-emitting diode) integrated light source structure and preparation method thereof - Google Patents
Low-light attenuation flip chip-packaging LED (light-emitting diode) integrated light source structure and preparation method thereof Download PDFInfo
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- CN104681691A CN104681691A CN201410646142.5A CN201410646142A CN104681691A CN 104681691 A CN104681691 A CN 104681691A CN 201410646142 A CN201410646142 A CN 201410646142A CN 104681691 A CN104681691 A CN 104681691A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
Abstract
The invention discloses a low-light attenuation flip chip-packaging LED (light-emitting diode) integrated light source structure. The structure comprises a prefabricated substrate and flip chips, the flip chips are soldered on the prefabricated substrate by reflow soldering, wherein the prefabricated substrate consists of an aluminium nitride ceramic layer, a copper-clad circuit layer, a high temperature-resistant reflective layer and electrode pads, and the copper-clad circuit layer, the high temperature-resistant reflective layer and the electrode pads are arranged on the aluminium nitride ceramic layer; before reflow soldering, soldering tin is preclad on flip chip electrodes. The invention effectively prevents the light attenuation of flip chip integrated light sources as the result of the yellowing of ordinary reflective layers caused by high-temperature eutectic reflow soldering in the prior art. The invention effectively prevents the light attenuation of integrated light sources as the result of the oxidation and sulfuration of surface-silvered wire copper layers in the prior art. After reflow soldering, the number of holes in soldering tin is small, and thereby the thermal resistance of the soldering tin structure is effectively decreased. Heat is effectively conducted onto a heat sink.
Description
Technical field
The present invention relates to lighting field, particularly relate to a kind of LED integrated light source structure and method of chip package of low light attenuation.
Background technology
LED in the past covers brilliant integrated optical source (or being referred to as to cover brilliant COB), its structure and method one are by Sn/Au eutectic (AuSn 80/20) Reflow Soldering, are welded to (Fig. 1 a, 1b) on LED integrated optical source Prefabricated substrate covering crystalline substance.Adopt structure one to have following problem: Sn/Au eutectic Reflow Soldering is by die bond, then carrying out high temperature (>283C) Reflow Soldering to precoating covering the Sn/Au eutectic on brilliant electrode, making to cover brilliant and Prefabricated substrate combination.So when the reflectorized material covering brilliant integrated optical source reflective areas is common reflectorized material, namely time white ink solder mask (Liquid photoimageable solder mask), reflectorized material generation yellow is caused owing to have employed high temperature eutectic Reflow Soldering, and make it decline to visible light reflectance, finally cause the light efficiency covering brilliant integrated optical source to reduce.Its structure and method two are by tin cream SAC305 Reflow Soldering, are welded to (Fig. 2 a, 2b) on LED integrated optical source Prefabricated substrate covering crystalline substance.Adopt structure two to have following problem: tin cream Reflow Soldering adopts steel mesh print solder paste on the chip electrode of Prefabricated substrate, then by die bond and eutectic Reflow Soldering, make to cover brilliant and Prefabricated substrate combination.Benefit is that the fusing point of tin cream SAC305 is less than 220C, avoids common reflectorized material high temperature yellow problem.But harm can form scolding tin after tin cream Reflow Soldering to contain hole (hole rates of 10 ~ 30%), cause the scolding tin thermal resistance of condition of equivalent thickness larger than the thermal resistance of Sn/Au eutectic, hole is more, and thermal resistance is larger.This scolding tin containing hole becomes the heat conduction bottleneck covering brilliant integrated optical source.
The echo area covering brilliant integrated optical source in the past exposes silver-plated conductor layer (Fig. 1 a, 1b on the surface, Fig. 2 a, 2b), easily cure and be oxidized, silver coating can turn black when covering brilliant integrated optical source and working long hours, cause the visible light reflectance in echo area to decline, finally cause the light decay covering brilliant integrated optical source.
In the past cover brilliant integrated optical source, substrate back be without other apposition materials aluminium nitride AlN ceramic surface.Cover the heat radiation of brilliant integrated optical source on radiator, need by the not high heat-conducting silicone grease of thermal conductivity, or heat-conducting cream (1 ~ 8w/mk thermal conductivity) conducts heat.May become entirety cover brilliant integrated optical source add radiator combination heat conduction bottleneck.
Summary of the invention
The invention provides a kind of LED integrated light source structure of chip package of low light attenuation, wherein,
Described structure comprises Prefabricated substrate and cover crystalline substance, described in cover and be brilliantly welded on Prefabricated substrate by Reflow Soldering, wherein, described Prefabricated substrate comprises aluminium nitride ceramics layer, the deposited copper wire layer on described aluminium nitride ceramics layer, high temperature resistant reflector, electrode pad; Scolding tin and gold-plated or silver-plated on Prefabricated substrate corresponding thereto that crystalline substance precoated is covered before Reflow Soldering, or scolding tin and cover corresponding with it is brilliant gold-plated that Prefabricated substrate chip electrode has been precoated.
Further, the chip bonding pad of Prefabricated substrate, electrode pad surface gold-plating, silver-plated or scolding tin of precoating, and conductive line surfaces is silver-plated or without coating.
Further, described solder compositions is AuSn (80/20), or SAC305, or SAC405, or SN100C.
Further, described high temperature resistant reflector is high temperature resistant whiteware ink, high temperature resistant solder mask, or high temperature resistant white silica gel.
Further, described layers of copper is double-decker, and thick copper layer is chip bonding pad and electrode pad, and thin copper layer is connect the wire of pad, and its surface can be silver-plated or without coating.
Further, described light-source structure be applied to different capacity, different series-parallel circuit, different size size cover brilliant integrated optical source.
Present invention also offers a kind of preparation method of LED integrated light source structure of chip package of low light attenuation, described method comprises the steps:
(1) form described Prefabricated substrate, specifically comprise:
(1a) by existing thick film printing technique, or film direct copper plating technology, complete on aluminium nitride ceramics and arrange deposited copper wire layer, copper-clad has thin copper layer and thick copper layer;
(1b) make high temperature resistant reflector, integrated optical source luminous zone, material is generally high temperature resistant whiteware ink, high temperature resistant solder mask, or high temperature resistant white silica gel, by smooth treatment technology, fill to cover and apply copper wire layer neighboring area, and keep reflector consistent with copper-clad height;
(1c) by exposure imaging and etching technique, complete the solder mask in all the other regions, material is also white solder mask ink;
(1d) revealing layers of copper surface (i.e. thick copper layer) and carry out Immersion Ag, applying corresponding to there being the crystalline substance that covers of scolding tin of precoating;
(2) cover brilliant placement and be covered with on the chip bonding pad of described Prefabricated substrate;
(3) eutectic Reflow Soldering covers crystalline substance array, is welded on Prefabricated substrate;
(4) silica gel box dam glue makes;
(5) fluorescent powder silica gel layer is covered.
Invention further provides a kind of preparation method of LED integrated light source structure of chip package of low light attenuation, described method comprises the steps:
(1) form described Prefabricated substrate, specifically comprise:
(1a) by existing thick film printing technique, or film direct copper plating technology technology, complete on aluminium nitride ceramics and arrange deposited copper wire layer, copper-clad has thin copper layer and thick copper layer;
(1b) make high temperature resistant reflector, integrated optical source luminous zone, material is generally high temperature resistant whiteware ink, or high temperature resistant solder mask, or high temperature resistant white silica gel, by smooth treatment technology, fill to cover and apply copper wire layer neighboring area, and keep reflector consistent with copper-clad height;
(1c) by exposure imaging and etching technique, complete the solder mask in all the other regions, material is also white solder mask ink;
(1d) revealing layers of copper surface (i.e. thick copper layer) and carry out deposited tin, applying corresponding to there being the crystalline substance that covers of gold-plated electrode;
(2) cover brilliant placement and be covered with on the chip bonding pad of described Prefabricated substrate;
(3) eutectic Reflow Soldering covers crystalline substance array, is welded on Prefabricated substrate;
(4) silica gel box dam glue makes;
(5) fluorescent powder silica gel layer is covered.
The invention has the advantages that: effectively prevent in conventional art because high temperature eutectic Reflow Soldering causes the yellow of conventional reflector layer and cause cover brilliant integrated optical source light decay.Effectively prevent the oxidation in conventional art after wire layers of copper electroplate and sulfuration and the light decay of the integrated optical source caused.After Reflow Soldering, the hole in scolding tin is few, significantly reduces the thermal resistance of soldering structure.Effectively heat is exported on radiator.
Accompanying drawing explanation
Fig. 1 a, 1b of the prior artly cover brilliant integrated light source structure one.
Fig. 2 a, 2b of the prior artly cover brilliant integrated light source structure two.
Fig. 3 a-3d covers brilliant integrated light source structure one in the present invention.
Fig. 4 a-4d covers brilliant integrated light source structure two in the present invention.
Fig. 5 covers brilliant integrated optical source structure in the present invention.
Fig. 6 be in the present invention 12 series connection 2 parallel lines cover brilliant integrated optical source.
Fig. 7 be in the present invention 12 series connection 3 parallel lines cover brilliant integrated optical source.
Embodiment
Elaborate below in conjunction with the embodiment of accompanying drawing to the LED integrated light source structure of the chip package of a kind of low light attenuation provided by the invention.
Embodiment 1
As shown in Figure 3, wherein the high temperature resistant reflector of substrate echo area is high temperature resistant whiteware ink (Ceramic Ink), or high temperature resistant solder mask (High temperature liquid photoimageable solder mask), or high temperature resistant white silica gel (white reflective silicone).Whiteware ink, or high temperature resistant solder mask, or white silica gel reaches more than 90% to visible light reflectance.The wherein chip bonding pad of Prefabricated substrate, and electrode pad have employed silver-plated or gold-plated.Wherein cover scolding tin that brilliant electrode precoated before Reflow Soldering, wherein solder compositions is AuSn (80/20), or SAC305, or SAC405, or SN100C or other materials.What wherein adopt covers brilliant cross section as shown in Figure 3.Wherein cover crystalline substance to be welded on Prefabricated substrate by die bond and eutectic Reflow Soldering.
Wherein layers of copper is double-decker, and thick copper layer is chip bonding pad and electrode pad, and thin copper layer is connect the wire of pad, and its surface can be silver-plated or without coating.Wire thin copper layer is by high temperature resistant whiteware ink, or high temperature resistant solder mask, or high temperature resistant white silica gel covers.
As shown in Figure 5, prefabricated aluminum-nitride-based back, the deposited steel structure of selectable block shape, its surface gold-plating.
As shown in Figures 6 and 7, aforesaid substrate structure can be applied to different capacity, different series-parallel circuit, different size size cover brilliant integrated optical source.
High temperature resistant whiteware ink (Ceramic Ink) be have employed for echo area, or high temperature resistant solder mask (High temperature liquid photoimageable solder mask), or the exotic material such as high temperature resistant white silica gel (white reflective silicone).Anti-yellowing change ability increases, and it reaches more than 90% to visible light reflectance.Effectively prevent in conventional art because high temperature eutectic Reflow Soldering causes the yellow of conventional reflector layer and cause cover brilliant integrated optical source light decay.
Meanwhile, layers of copper is double-decker, and thick copper layer is chip bonding pad and electrode pad, and thin copper layer is connect the wire of pad, and its surface can be silver-plated or without coating.Wire thin copper layer is by high temperature resistant whiteware ink, or high temperature resistant solder mask, or high temperature resistant white silica gel covers, and effectively can prevent the oxidation in conventional art after wire layers of copper electroplate and sulfuration and the light decay of integrated optical source that causes.
In addition, because the scolding tin (AuSn (80/20), or SAC305, or SAC405, or SN100C or other materials) on chip electrode applies in advance.Tin cream SAC305 solder reflow techniques is in the past compared, without hole.After Reflow Soldering, the hole in scolding tin is few, effectively reduces the thermal resistance of soldering structure.
Moreover, prefabricated aluminium nitride (AlN) substrate back, the deposited steel structure of the electroplate of selectable block shape.When selecting this structure, user side can integrated optical source, low temperature scolding tin (60w/mk thermal conductivity is passed through with the radiator of integrated optical source, <220C fusing point) connect, employing heat-conducting silicone grease in the past, or heat-conducting cream (1 ~ 8w/mk thermal conductivity) interconnection technique is compared, reduce the thermal resistance that LED integrated optical source adds radiator combination.Effectively heat is exported on radiator.
The concrete preparation method that described LED covers brilliant integrated light source structure is:
First Prefabricated substrate is formed: the first step, by the existing thick film printing technique of industry (thick film screen printing), or film direct copper plating technology (thin film Direct Plating Copper) technology, complete on aluminium nitride (AlN) pottery and arrange deposited copper wire layer, copper-clad has thin copper layer and thick copper layer.Second step, make high temperature resistant reflector, integrated optical source luminous zone, material is generally high temperature resistant whiteware ink (Ceramic Ink), high temperature resistant solder mask (High temperature liquid photoimageable solder mask), or high temperature resistant white silica gel (white reflective silicone), by smooth treatment technology, fill to cover and apply copper wire layer neighboring area, and keep reflector consistent with copper-clad height, as shown in the figure.3rd step, by exposure imaging and etching technique, completes the solder mask in all the other regions, and material is also white solder mask ink (Liquid photoimageable solder mask).4th step, dew layers of copper surface (i.e. thick copper layer) carries out Immersion Ag.
Form LED integrated optical source again: the first step, adopting as covered crystalline substance in Fig. 3, placing and being covered with on the chip bonding pad of Prefabricated substrate in figure 3.Second step, eutectic Reflow Soldering covers crystalline substance array, is welded on Prefabricated substrate.3rd step, silica gel box dam glue makes.4th step, covers fluorescent powder silica gel layer.
Embodiment 2
As shown in Figure 4, wherein the high temperature resistant reflector of substrate echo area is high temperature resistant whiteware ink (Ceramic Ink), or high temperature resistant solder mask (High temperature liquid photoimageable solder mask), or high temperature resistant white silica gel (white reflective silicone).Whiteware ink, or high temperature resistant solder mask, or white silica gel reaches more than 90% to visible light reflectance.The chip bonding pad of Prefabricated substrate, and electrode pad has been precoated tin.Solder compositions is AuSn 80/20, SAC305, or SAC405, or SN100C or other materials.What wherein adopt covers brilliant cross section as shown in Figure 6, covers crystalline substance and is welded on Prefabricated substrate by die bond and eutectic Reflow Soldering.
Layers of copper is double-decker, and thick copper layer is chip bonding pad and electrode pad, and thin copper layer is connect the wire of pad, and its surface can be silver-plated or without coating.Wire thin copper layer is by high temperature resistant whiteware ink, or high temperature resistant solder mask, or high temperature resistant white silica gel covers.
As shown in Figure 5, prefabricated aluminum-nitride-based back, the deposited steel structure of selectable block shape, can precoat tin or silver-plated in its surface.
As shown in Figures 6 and 7, aforesaid substrate structure can be applied to different capacity, different series-parallel circuit, and different size size covers brilliant integrated optical source.
Echo area have employed high temperature resistant whiteware ink (Ceramic Ink), or high temperature resistant solder mask (High temperature liquid photoimageable solder mask), or the exotic material such as high temperature resistant white silica gel (white reflective silicone).Anti-yellowing change ability increases, and it reaches more than 90% to visible light reflectance.Effectively prevent in conventional art because high temperature eutectic Reflow Soldering causes the yellow of conventional reflector layer and cause cover brilliant integrated optical source light decay.
Wherein layers of copper is double-decker, and thick copper layer is chip bonding pad and electrode pad, and thin copper layer is connect the wire of pad, and it can be silver-plated or without coating.Wire thin copper layer is by high temperature resistant whiteware ink, or high temperature resistant solder mask, or high temperature resistant white silica gel covers, and effectively can prevent the oxidation of wire layers of copper plated surface silver layer surface in conventional art and sulfuration and the light decay of integrated optical source that causes.
In addition, the thick copper layer chip bonding pad of Prefabricated substrate, and electrode pad has been precoated tin (AuSn 80/20, or SAC305, or SAC405, or SN100C or other materials).Tin cream SAC305 solder reflow techniques is in the past compared, without hole.After Reflow Soldering, the hole in scolding tin is few, effectively reduces the thermal resistance of soldering structure.
Moreover, prefabricated aluminium nitride (AlN) substrate back, the deposited steel structure of the electroplate of selectable block shape.When selecting this structure, user side can integrated optical source, low temperature scolding tin (60w/mk thermal conductivity is passed through with the radiator of integrated optical source, <220C fusing point) connect, employing heat-conducting silicone grease in the past, or heat-conducting cream (1 ~ 8w/mk thermal conductivity) interconnection technique is compared, reduce the thermal resistance that LED integrated optical source adds radiator combination.Effectively heat is exported on radiator.
The concrete preparation method that described LED covers brilliant integrated light source structure is:
The first step, by the existing thick film printing technique of industry (thick film screen printing), or film direct copper plating technology (thin film Direct Plating Copper) technology, complete on aluminium nitride (AlN) pottery and arrange deposited copper wire layer, copper-clad has thin copper layer and thick copper layer.Second step, make high temperature resistant reflector, integrated optical source luminous zone, material is generally high temperature resistant whiteware ink (Ceramic Ink), or high temperature resistant solder mask (High temperature liquid photoimageable solder mask), or high temperature resistant white silica gel (white reflective silicone), by smooth treatment technology, fill to cover and apply copper wire layer neighboring area, and keep reflector consistent with copper-clad height, as shown in the figure.3rd step, by exposure imaging and etching technique, completes the solder mask in all the other regions, and material is also white solder mask ink (Liquid photoimageable solder mask).4th step, dew layers of copper surface (i.e. thick copper layer) carries out deposited tin.
Form LED integrated optical source again: adopting as covered crystalline substance in Fig. 4, placing and being covered with on the chip bonding pad of Prefabricated substrate in the diagram.Second step, eutectic Reflow Soldering covers crystalline substance array, is welded on Prefabricated substrate.3rd step, silica gel box dam glue makes.4th step, covers fluorescent powder silica gel layer.
The foregoing is only the preferred embodiments of the present invention, the numerical value mentioned in the description of above-mentioned specification and number range are not limited to the present invention, just for the invention provides preferred embodiment, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a LED integrated light source structure for the chip package of low light attenuation, described structure comprises Prefabricated substrate and cover crystalline substance, described in cover and be brilliantly welded on Prefabricated substrate by Reflow Soldering,
Wherein, described Prefabricated substrate comprises aluminium nitride ceramics layer, the deposited copper wire layer on described aluminium nitride ceramics layer, high temperature resistant reflector, electrode pad;
Cover scolding tin and gold-plated or silver-plated on described Prefabricated substrate corresponding thereto that crystalline substance precoated described in before Reflow Soldering, or described Prefabricated substrate chip electrode has been precoated scolding tin and corresponding with it described in cover brilliant gold-plated.
2. structure according to claim 1, is characterized in that, the chip bonding pad of described Prefabricated substrate, electrode pad surface gold-plating, silver-plated or scolding tin of precoating, and conductive line surfaces is silver-plated or without coating.
3. structure according to claim 1 and 2, is characterized in that, described solder compositions is AuSn (80/20), or SAC305, or SAC405, or SN100C.
4. structure according to claim 1 and 2, is characterized in that, described high temperature resistant reflector is high temperature resistant whiteware ink, high temperature resistant solder mask, or high temperature resistant white silica gel.
5. structure according to claim 1 and 2, is characterized in that, described layers of copper is double-decker, and thick copper layer is chip bonding pad and electrode pad, and thin copper layer is connect the wire of pad, and its surface can be silver-plated or without coating.
6. structure according to claim 1 and 2, is characterized in that, described light-source structure be applied to different capacity, different series-parallel circuit, different size size cover brilliant integrated optical source.
7. a preparation method for the LED integrated light source structure of the chip package of the low light attenuation as described in any one of claim 1 to 6, described method comprises the steps:
(1) form described Prefabricated substrate, specifically comprise:
(1a) by existing thick film printing technique, or film direct copper plating technology, complete on aluminium nitride ceramics and arrange deposited copper wire layer, copper-clad has thin copper layer and thick copper layer;
(1b) make high temperature resistant reflector, integrated optical source luminous zone, material is generally high temperature resistant whiteware ink, high temperature resistant solder mask, or high temperature resistant white silica gel, by smooth treatment technology, fill to cover and apply copper wire layer neighboring area, and keep reflector consistent with copper-clad height;
(1c) by exposure imaging and etching technique, complete the solder mask in all the other regions, material is also white solder mask ink;
(1d) revealing layers of copper surface (i.e. thick copper layer) and carry out Immersion Ag, applying corresponding to there being the crystalline substance that covers of scolding tin of precoating;
(2) cover brilliant placement and be covered with on the chip bonding pad of described Prefabricated substrate;
(3) eutectic Reflow Soldering covers crystalline substance array, is welded on Prefabricated substrate;
(4) silica gel box dam glue makes;
(5) fluorescent powder silica gel layer is covered.
8. a preparation method for the LED integrated light source structure of the chip package of low light attenuation as claimed in claim 4, described method comprises the steps:
(1) form described Prefabricated substrate, specifically comprise:
(1a) by existing thick film printing technique, or film direct copper plating technology technology, complete on aluminium nitride ceramics and arrange deposited copper wire layer, copper-clad has thin copper layer and thick copper layer;
(1b) make high temperature resistant reflector, integrated optical source luminous zone, material is generally high temperature resistant whiteware ink, or high temperature resistant solder mask, or high temperature resistant white silica gel, by smooth treatment technology, fill to cover and apply copper wire layer neighboring area, and keep reflector consistent with copper-clad height;
(1c) by exposure imaging and etching technique, complete the solder mask in all the other regions, material is also white solder mask ink;
(1d) revealing layers of copper surface (i.e. thick copper layer) and carry out deposited tin, applying corresponding to there being the crystalline substance that covers of gold-plated electrode;
(2) cover brilliant placement and be covered with on the chip bonding pad of described Prefabricated substrate;
(3) eutectic Reflow Soldering covers crystalline substance array, is welded on Prefabricated substrate;
(4) silica gel box dam glue makes;
(5) fluorescent powder silica gel layer is covered.
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| CN201410646142.5A CN104681691A (en) | 2014-11-14 | 2014-11-14 | Low-light attenuation flip chip-packaging LED (light-emitting diode) integrated light source structure and preparation method thereof |
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| CN106102328A (en) * | 2016-08-22 | 2016-11-09 | 景旺电子科技(龙川)有限公司 | A kind of printed board COB box dam manufacture method |
| CN106102328B (en) * | 2016-08-22 | 2019-03-12 | 景旺电子科技(龙川)有限公司 | A kind of printed board COB box dam production method |
| CN106132080A (en) * | 2016-08-30 | 2016-11-16 | 江门全合精密电子有限公司 | A kind of electric silver plate with limit insulation system and preparation method thereof |
| CN106129234A (en) * | 2016-08-30 | 2016-11-16 | 江门全合精密电子有限公司 | Oneization silver plate and preparation method thereof |
| CN106163098A (en) * | 2016-08-30 | 2016-11-23 | 江门全合精密电子有限公司 | A kind of LED PCB improving reflectance and preparation method thereof |
| CN110908180A (en) * | 2018-09-17 | 2020-03-24 | 夏普株式会社 | Illumination device, display device, and method for manufacturing illumination device |
| CN110996232A (en) * | 2019-11-22 | 2020-04-10 | 歌尔股份有限公司 | Sound generating device monomer and electronic equipment |
| CN112467018A (en) * | 2020-10-20 | 2021-03-09 | 深圳市隆利科技股份有限公司 | Mini-LED/micro-LED surface light source and manufacturing method thereof |
| CN113764546A (en) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | Mini-LED device, LED display module and manufacturing method thereof |
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Application publication date: 20150603 |