CN110707199B - Deep ultraviolet LED device and packaging method thereof - Google Patents
Deep ultraviolet LED device and packaging method thereof Download PDFInfo
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- CN110707199B CN110707199B CN201910984091.XA CN201910984091A CN110707199B CN 110707199 B CN110707199 B CN 110707199B CN 201910984091 A CN201910984091 A CN 201910984091A CN 110707199 B CN110707199 B CN 110707199B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000003756 stirring Methods 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000003466 welding Methods 0.000 claims abstract description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 230000008569 process Effects 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 10
- 238000003780 insertion Methods 0.000 claims description 8
- 230000037431 insertion Effects 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910000679 solder Inorganic materials 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000011368 organic material Substances 0.000 abstract description 10
- 238000006303 photolysis reaction Methods 0.000 abstract description 6
- 230000015843 photosynthesis, light reaction Effects 0.000 abstract description 6
- 239000000741 silica gel Substances 0.000 abstract description 6
- 229910002027 silica gel Inorganic materials 0.000 abstract description 6
- 238000004925 denaturation Methods 0.000 abstract description 5
- 230000036425 denaturation Effects 0.000 abstract description 5
- 239000003292 glue Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
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- 230000009286 beneficial effect Effects 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910016338 Bi—Sn Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 235000015842 Hesperis Nutrition 0.000 description 1
- 235000012633 Iberis amara Nutrition 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a deep ultraviolet LED device and a packaging method thereof, wherein the deep ultraviolet LED device comprises: a substrate with positive and negative electrodes, and a dam arranged on the substrate; the deep ultraviolet LED chip is fixed on the substrate and connected with the positive electrode and the negative electrode on the substrate; the periphery of the lens is provided with a frame which is matched with the retaining dam; the lens is buckled in the dam of the base plate through the frame and forms an inner cavity for accommodating the deep ultraviolet LED chip. The lens with the frame and the substrate with the dam are connected by adopting a welding line formed by friction stir welding, so that airtight packaging is realized, organic materials such as organic silica gel and the like are not used, and all-inorganic packaging is realized. The welding process is only at a local high temperature, the die bonding quality is not affected and the chip is not damaged due to the fact that the temperature is too high, the problem of photolysis denaturation of an organic material under the irradiation of a deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and reliability of the LED are improved.
Description
Technical Field
The invention relates to a semiconductor light-emitting device packaging technology, in particular to a deep ultraviolet LED device and a packaging method thereof.
Background
The UV LED is a light-emitting diode with the luminous center wavelength smaller than 400nm, and has the advantages of no mercury pollution, long service life, no need of preheating, instant starting, no influence of switching times on the service life and the like, thereby being widely applied to anti-counterfeiting technology, ink curing, exposure machine, medical phototherapy, sterilization and disinfection and the like.
The near ultraviolet LED (wavelength is 300-400 nm) is mainly obtained by packaging near ultraviolet LED chips, and two general methods can be realized, one is a packaging mode which can directly use white light, namely the near ultraviolet LED chips are obtained by directly sealing the chips through organic silica gel water or adhering a substrate and a lens through organic glue. However, organic glue and other groups containing carboxyl (-COOH) are extremely easy to photolyze under the irradiation of deep ultraviolet light below 300nm, so that the glue is denatured and decomposed, and light emission is affected or a chip is damaged. Therefore, silicone glue packages are not suitable for deep ultraviolet LED packages. Another method is to use soldering technology, such as brazing, and the whole solder needs to be heated to a certain temperature (the melting point of the solder), which simultaneously makes the temperature of other parts of the solder reach a high temperature, so that the solid quality is easily affected, and the deep ultraviolet LED chip is more seriously burned out due to the high temperature, so that a new packaging technology is needed to support the packaging of the deep ultraviolet LED.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a deep ultraviolet LED device and a packaging method thereof, which can avoid the photolysis of glue and the influence of high temperature.
According to an embodiment of the first aspect of the present invention, a deep ultraviolet LED device includes:
a substrate with positive and negative electrodes, wherein a dam is arranged on the substrate;
the deep ultraviolet LED chip is fixed on the substrate and is connected with the positive electrode and the negative electrode on the substrate;
the periphery of the lens is provided with a frame which is matched with the surrounding dam; the lens is buckled in the surrounding dam of the substrate through the frame and forms an inner cavity for accommodating the deep ultraviolet LED chip;
and the welding seam is formed by friction stir welding and is used for sealing and connecting a gap between the dam and the frame.
The deep ultraviolet LED device according to the first embodiment of the invention has at least the following beneficial effects: the lens with the frame and the substrate with the dam are connected by adopting a welding line formed by friction stir welding, so that airtight packaging is realized, organic materials such as organic silica gel and the like are not used, and all-inorganic packaging is realized. The welding process is only at a local high temperature, the die bonding quality is not affected and the chip is not damaged due to the fact that the temperature is too high, the problem of photolysis denaturation of an organic material under the irradiation of a deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and reliability of the LED are improved. In view of the above advantages of the embodiments of the present invention, in combination with the practical situation of the ultraviolet LED package, the LED device disclosed in the embodiments of the present invention is also applicable to the package of the entire ultraviolet band LED device.
According to some embodiments of the invention, the substrate has a groove, the inner cavity is formed between the groove and the lens, and the deep ultraviolet LED chip is located in the groove.
According to some embodiments of the invention, the deep ultraviolet LED chip is fixed to the substrate by a die bonding layer.
According to some embodiments of the invention, the die attach layer is a lead-free solder paste.
According to some embodiments of the invention, the die bonding layer is a conductive die bonding layer, and is further used for connecting the deep ultraviolet LED chip with positive and negative electrodes on the substrate.
According to some embodiments of the invention, the deep ultraviolet LED chip is electrically connected to positive and negative electrodes on the substrate through wires.
According to some embodiments of the invention, the lens is a planar quartz glass lens or a hemispherical quartz glass lens.
According to some embodiments of the invention, the inner cavity is filled with an inert gas, nitrogen, neutral liquid or evacuated.
According to the embodiment of the second aspect of the invention, the method for packaging the deep ultraviolet LED device comprises the following steps:
fixing the deep ultraviolet LED chip on the substrate and connecting the deep ultraviolet LED chip with positive and negative electrodes on the substrate;
the lens is buckled in a surrounding dam on the substrate through a frame of the lens, a gap is reserved between the surrounding dam and the frame, and an inner cavity for accommodating the deep ultraviolet LED chip is formed between the lens and the substrate;
a weld is formed between the dam and the rim using a friction stir welding forming process for sealing the gap.
The method for packaging the deep ultraviolet LED device according to the second embodiment of the invention has at least the following beneficial effects: a friction stir welding forming process is adopted to form a welding line between the lens with the frame and the substrate provided with the dam for sealing a gap, so that airtight packaging is realized, organic materials such as organic silica gel and the like are not used, and all-inorganic packaging is realized. The welding process is only at a local high temperature, the die bonding quality is not affected and the chip is not damaged due to the fact that the temperature is too high, the problem of photolysis denaturation of an organic material under the irradiation of a deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and reliability of the LED are improved. In view of the above advantages of the embodiments of the present invention, in combination with the actual situation of ultraviolet LED packaging, the method for packaging an LED device disclosed in the embodiments of the present invention is also applicable to packaging an LED device in the entire ultraviolet band.
According to some embodiments of the invention, the friction stir welding forming process adopts a stirring pin to rotate at a high speed between the dam and the frame to generate high temperature, so that materials at two sides of a gap are highly plastically deformed and deposited to form a welding seam, the stirring pin is arranged on a stirring head of a friction stir welding device, the rotating speed of the stirring pin is 1rpm-1000rpm, the inclination angle of the stirring pin is +/-10 degrees, the insertion depth of the stirring head is 0.01mm-5mm, the insertion residence time of the stirring head is 0.1s-100s, and the moving speed of the stirring head along the welding seam is 0.1mm/s-10mm/s.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic diagram of a deep ultraviolet LED device package according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram of a deep ultraviolet LED device package according to a second embodiment of the present invention;
FIG. 3 is a schematic view of a substrate with a groove and a metal dam at the top edge;
FIG. 4 is a schematic view of a planar quartz glass lens with a metal rim according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a hemispherical quartz glass lens according to an embodiment of the invention;
FIG. 6 is a top view of a quartz glass lens with a metal rim;
fig. 7 is a schematic illustration of friction stir welding.
Reference numerals:
substrate 100, dam 110, groove 120, wire 130,
Deep ultraviolet LED chip 200,
Lens 300, frame 310,
Weld 400, pin 410, and stirring head 420.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience of description of the present invention and to simplify the description, and do not indicate or imply that the apparatus or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present invention.
In the description of the present invention, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present invention can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
Referring to fig. 1 and fig. 2, a deep ultraviolet LED device according to two embodiments of the present disclosure includes:
a substrate 100 having positive and negative electrodes, the substrate 100 being provided with a dam 110 as shown in fig. 3; the preferential box dam 110 is a metal box dam, and the metal box dam can be made of copper alloy;
a deep ultraviolet LED chip 200, the deep ultraviolet LED chip 200 being fixed on the substrate 100 and connected to positive and negative electrodes (not shown) on the substrate 100; the deep ultraviolet LED chip 200 refers to an ultraviolet LED chip with a luminescence center wavelength less than 300nm, and the deep ultraviolet LED chip in this embodiment preferably adopts an ultraviolet LED chip with a luminescence center wavelength of 265 nm;
a lens 300, wherein a frame 310 adapted to the dam 110 is provided on the periphery of the lens 300, as shown in fig. 4-6; the lens 300 is fastened in the dam 110 of the substrate 100 through the frame 310, and forms an inner cavity for accommodating the deep ultraviolet LED chip 200;
a weld 400 formed by friction stir welding is used to seal the gap between the connecting weirs 110 and the frame 310, as shown in fig. 7.
According to the deep ultraviolet LED device of the first embodiment of the present invention, the lens 300 with the rim 310 and the substrate 100 provided with the weirs 110 are connected by the weld 400 formed by friction stir welding, so that airtight packaging is realized, and organic materials such as organic silica gel are not used, so that all-inorganic packaging is realized. The welding process is only at a local high temperature, the die bonding quality is not affected and the chip is not damaged due to the fact that the temperature is too high, the problem of photolysis denaturation of an organic material under the irradiation of a deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and reliability of the LED are improved. In view of the above advantages of the embodiments of the present invention, in combination with the practical situation of the ultraviolet LED package, the LED device disclosed in the embodiments of the present invention is also applicable to the package of the entire ultraviolet band LED device.
In some embodiments of the present invention, the substrate 100 has a groove 120, and an inner cavity is formed between the groove 120 and the lens 300, and the deep ultraviolet LED chip 200 is located in the groove 120.
In some embodiments of the present invention, the substrate 100 is a ceramic substrate, a glass fiber board, or a composite substrate 100. The ceramic substrate material may be an alumina or aluminum nitride ceramic.
In some embodiments of the present invention, the deep ultraviolet LED chip 200 is fixed to the substrate 100 by a die bonding layer (not shown). Further, the die bonding layer is lead-free solder paste, and the main component of the die bonding layer is Ag-Bi-Sn alloy.
In some embodiments of the present invention, the die bonding layer is a conductive die bonding layer, and is further used for connecting the deep ultraviolet LED chip 200 with the positive and negative electrodes on the substrate 100, so as to omit the conductive wire 130 of the conventional connection electrode.
In some embodiments of the present invention, the deep ultraviolet LED chip 200 is electrically connected to the positive and negative electrodes on the substrate 100 through the conductive wire 130, and the conductive wire 130 may be a common conductive wire 130 such as gold wire, silver wire, copper wire, or the like, or an alloy conductive wire 130.
In some embodiments of the present invention, the lens 300 is a planar quartz glass lens 300 or a hemispherical quartz glass lens 300, as shown in fig. 4 and 5, respectively, wherein the planar quartz glass lens 300 is mainly matched with the substrate 100 with the grooves 120, and the hemispherical quartz glass lens 300 may be used with both the substrates 100 with the grooves 120 and without the grooves 120.
In some embodiments of the present invention, the inner cavity is filled with inert gas, nitrogen, neutral liquid or vacuumized, so that the airtight performance can be further improved, and the deep ultraviolet LED chip 200 is protected.
The invention also comprises another embodiment, a deep ultraviolet LED device packaging method, which comprises the following steps:
the deep ultraviolet LED chip 200 is fixed on the substrate 100 and is connected with positive and negative electrodes on the substrate 100;
the lens 300 is buckled in the surrounding dam 110 on the substrate 100 through the frame 310, a gap is reserved between the surrounding dam 110 and the frame 310, and an inner cavity for accommodating the deep ultraviolet LED chip 200 is formed between the lens 300 and the substrate 100;
a weld 400 is formed between the dam 110 and the rim 310 for sealing the gap using a friction stir welding forming process, as shown in fig. 7.
According to the deep ultraviolet LED device packaging method of the second aspect of the embodiment of the invention, a welding seam 400 is formed between the lens 300 with the frame 310 and the substrate 100 provided with the dam 110 by adopting a friction stir welding molding process for sealing a gap, so that airtight packaging is realized, and organic materials such as organic silica gel and the like are not used, so that all-inorganic packaging is realized. The welding process is only at a local high temperature, the die bonding quality is not affected and the chip is not damaged due to the fact that the temperature is too high, the problem of photolysis denaturation of an organic material under the irradiation of a deep ultraviolet LED is solved, the manufactured deep ultraviolet LED is suitable for being used in various environments, and the stability and reliability of the LED are improved. In view of the above advantages of the embodiments of the present invention, in combination with the actual situation of ultraviolet LED packaging, the method for packaging an LED device disclosed in the embodiments of the present invention is also applicable to packaging an LED device in the entire ultraviolet band.
According to some embodiments of the present invention, the friction stir welding forming process uses a stirring pin 410 to rotate at a high speed between the dam 110 and the frame 310 to generate a high temperature, so that materials on two sides of a gap are highly plastically deformed and deposited to form a weld 400, the stirring pin 410 is mounted on a stirring head 420 of the friction stir welding device, the rotation speed of the stirring pin 410 is 1rpm-1000rpm, the inclination angle of the stirring pin 410 is + -10 DEG, the insertion depth of the stirring head 420 is 0.01mm-5mm, the insertion residence time of the stirring head 420 is 0.1s-100s, and the moving speed of the stirring head 420 along the weld 400 is 0.1mm/s-10mm/s.
The friction stir welding technology adopted by the embodiment of the invention is a mature welding technology, is invented by the British welding institute (The Welding Institute, TWI for short) in 1991, and is applied to the welding of parts such as automobiles, airplanes, ship plates, rockets and the like in a large scale. The core component is a stirring pin rotating at a high speed, and the welding principle is that the rotating stirring pin generates heat by friction with welding flux, so that the temperature of a material at a connecting part is increased and softened, the material in front of a welding head is subjected to strong plastic deformation, and then the material with high plastic deformation is gradually deposited at the back of the stirring head along with the movement of the welding head, so that a friction stir welding seam is formed.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. A deep ultraviolet LED device, comprising:
a substrate with positive and negative electrodes, wherein a dam is arranged on the substrate;
the deep ultraviolet LED chip is fixed on the substrate and is connected with the positive electrode and the negative electrode on the substrate;
the periphery of the lens is provided with a frame which is matched with the surrounding dam; the lens is buckled in the surrounding dam of the substrate through the frame and forms an inner cavity for accommodating the deep ultraviolet LED chip;
the welding seam formed by friction stir welding is used for sealing and connecting a gap between the dam and the frame; the stirring friction welding forming adopts a stirring pin to rotate at a high speed between the surrounding dam and the frame to generate high temperature, so that materials on two sides of a gap are highly plastically deformed and deposited to form a welding seam, the stirring pin is arranged on a stirring head of a stirring friction welding device, the rotating speed of the stirring pin is 1rpm-1000rpm, the dip angle of the stirring pin is +/-10 degrees, the insertion depth of the stirring head is 0.01mm-5mm, the insertion residence time of the stirring head is 0.1s-100s, and the moving speed of the stirring head along the welding seam is 0.1mm/s-10mm/s.
2. The deep ultraviolet LED device of claim 1, wherein the substrate has a recess therein, the recess and the lens form the cavity therebetween, and the deep ultraviolet LED chip is located in the recess.
3. The deep ultraviolet LED device of claim 1 or 2, wherein the deep ultraviolet LED chip is secured to the substrate by a die bonding layer.
4. The deep ultraviolet LED device of claim 3, wherein the die attach layer is a lead-free solder paste.
5. The deep ultraviolet LED device of claim 3, wherein the die bonding layer is a conductive die bonding layer and is further configured to connect the deep ultraviolet LED chip to positive and negative electrodes on the substrate.
6. The deep ultraviolet LED device of claim 1, wherein the deep ultraviolet LED chip is electrically connected to positive and negative electrodes on the substrate by wires.
7. The deep ultraviolet LED device of claim 1, wherein the lens is a planar quartz glass lens or a hemispherical quartz glass lens.
8. The deep ultraviolet LED device of claim 1, wherein the interior cavity is filled with an inert gas, nitrogen, a neutral liquid, or a vacuum.
9. The deep ultraviolet LED device packaging method is characterized by comprising the following steps of:
fixing the deep ultraviolet LED chip on the substrate and connecting the deep ultraviolet LED chip with positive and negative electrodes on the substrate;
the lens is buckled in a surrounding dam on the substrate through a frame of the lens, a gap is reserved between the surrounding dam and the frame, and an inner cavity for accommodating the deep ultraviolet LED chip is formed between the lens and the substrate;
forming a weld between the dam and the rim using a friction stir welding forming process for sealing the gap; the stirring friction welding forming process adopts a stirring needle to rotate at a high speed between the surrounding dam and the frame to generate high temperature, so that materials on two sides of a gap are highly plastically deformed and deposited to form a welding seam, the stirring needle is arranged on a stirring head of a stirring friction welding device, the rotating speed of the stirring needle is 1rpm-1000rpm, the dip angle of the stirring needle is +/-10 degrees, the insertion depth of the stirring head is 0.01mm-5mm, the insertion residence time of the stirring head is 0.1s-100s, and the moving speed of the stirring head along the welding seam is 0.1mm/s-10mm/s.
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| CN201910984091.XA CN110707199B (en) | 2019-10-16 | 2019-10-16 | Deep ultraviolet LED device and packaging method thereof |
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| CN201910984091.XA CN110707199B (en) | 2019-10-16 | 2019-10-16 | Deep ultraviolet LED device and packaging method thereof |
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| CN110707199B true CN110707199B (en) | 2024-03-26 |
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|---|---|---|---|---|
| CN111162154B (en) * | 2020-03-05 | 2020-12-04 | 华引芯（武汉）科技有限公司 | Ultraviolet light-emitting element and all-inorganic packaging method |
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