CN103165794A - Base for optical semiconductor device and method for preparing the same, and optical semiconductor device - Google Patents
Base for optical semiconductor device and method for preparing the same, and optical semiconductor device Download PDFInfo
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- CN103165794A CN103165794A CN2012105447012A CN201210544701A CN103165794A CN 103165794 A CN103165794 A CN 103165794A CN 2012105447012 A CN2012105447012 A CN 2012105447012A CN 201210544701 A CN201210544701 A CN 201210544701A CN 103165794 A CN103165794 A CN 103165794A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
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Abstract
The invention provides a base for an optical semiconductor device and a method for preparing the same; and the optical semiconductor device is stable in mechanical property, high in durability, and high in radiation property. The optical semiconductor device base is provided with a plurality of chip carrying portion for carrying the semiconductor chips and a plurality of signal connecting portions electrically connected with the carried semiconductor chips and providing electrode portions. The method comprises the following steps: a step of preparing metal frame, a plurality of chip carrying portions and signal connecting portions are formed on the metal frame, and the signal connecting portion is provided with a part with the thickness smaller than that of the plurality of chip carrying portions; a step of preparing the optical semiconductor device base, so surfaces and backsides of the chip carrying portions and at least one side of the signal connecting portions are exposed, and parts of the metal frame besides the chip carrying portions and signal connecting portions are buried by resin, and a shape of the optical semiconductor device is a plate shape.
Description
Technical field
The present invention relates to a kind of optical semiconductor device with base station and manufacture method thereof and use this optical semiconductor device optical semiconductor device of base station, described optical semiconductor device base station is that metal and resin compounded are formed.
Background technology
The optical elements such as light-emitting diode (light emitting diode, LED), photodiode, because efficient is high, and higher to the tolerance of external carbuncle and environmental impact, thereby be widely used in industrial circle.Further, optical element not only efficient is higher, and the life-span is long, and is small and exquisite portable, can consist of a lot of different structures, and can be with the lower original manufacturing that manufactures.
For example, in the material of known connection carrier being carried with semiconductor wafer, use to have the silicone material of fibre reinforced materials, to improve ultra-violet resistance and thermal endurance (with reference to patent documentation 1).
Especially in the optical semiconductor device of the height output that produces amount of heat, in high-fire resistance, has the structure that improves thermal diffusivity also very important.
[look-ahead technique document]
(patent documentation)
Patent documentation 1: Japanese Unexamined Patent Application Publication 2011-521481 communique
Summary of the invention
[inventing problem to be solved]
The object of the present invention is to provide a kind of optical semiconductor device with base station and manufacture method thereof, described optical semiconductor device base station is be used to realizing that a kind of mechanicalness is stablized and the optical semiconductor device of high-durability, high-cooling property.
[technological means of dealing with problems]
In order to reach above-mentioned purpose, according to the present invention, the manufacture method of a kind of optical semiconductor device with base station is provided, be to make the method that optical semiconductor device is used base station, described optical semiconductor device has a plurality of wafers with base station and holds section, is used for holding semiconductor wafer; And a plurality of signal connecting element are electrically connected at the aforementioned semiconductor wafer that is held, and provide electrode part to the outside; Wherein, described optical semiconductor device is characterised in that to have following operation with the manufacture method of base station:
Prepare the operation of metal framework, described metal framework is formed with aforementioned a plurality of wafer and holds section and aforementioned signal connecting element, and this signal connecting element has thickness and holds the part of the thickness of section less than these a plurality of wafers; And,
Make the aforementioned optical semiconductor device operation of base station, so that holding surface and the back side of section, exposes simultaneously aforementioned a plurality of wafer, and at least one mode of showing out of aforementioned signal connecting element, utilize the aforementioned a plurality of wafers of resin landfill on being formed at the aforementioned metal framework to hold part section and signal connecting element, and form described optical semiconductor device tabular with base station.
This kind manufacture method can be made a kind of optical semiconductor device base station, and it can utilize the wafer at while exposing surface and the back side to hold section, effectively discharges the heat that semiconductor wafer produces.And, can make a kind of optical semiconductor device base station, wherein, signal connecting element has thickness and holds the part of the thickness of section less than wafer, and utilize the resin landfill and hold part section and signal connecting element except being formed at a plurality of wafers on metal framework, and form tabularly, intensity will be improved so, and warpage reduces.By using this optical semiconductor device base station, can realize the optical semiconductor device of the stable and high-durability of a kind of mechanicalness, high-cooling property.
At this moment, in the operation of preparing the aforementioned metal framework, etching metal plate be can pass through, section and signal connecting element held and form aforementioned a plurality of wafer.
So, can easily prepare metallic plate with low cost.
And this moment, can have following operation: on the surface that be carried with aforesaid semiconductor wafer one side of aforementioned optical semiconductor device with base station the part of exposing that electrode part and aforementioned a plurality of wafer except aforementioned a plurality of signal connecting element hold section, carry out ester moulding.
Owing to having this kind operation, thereby can form the resin formation parts such as speculum or lens at optical semiconductor device with on the surface of base station, and can make a kind of durability and be able to the H.D optical semiconductor device base station that further improves.
And this moment, utilizing the aforementioned resin landfill, aforementioned optical semiconductor device is formed in tabular operation with base station, preferred so that aforementioned optical semiconductor device holds the mode of the thickness of section with the thickness of the part that is formed with aforementioned each signal connecting element of base station greater than aforementioned each wafer, come the landfill aforementioned resin.
So, when at optical semiconductor device when forming the resin formation part such as speculum or lens on the surface of base station, can suppress to produce resin burr (burr) on the surface of each signal connecting element.
And this moment, utilizing the aforementioned resin landfill, so that aforementioned optical semiconductor device forms in tabular operation with base station, can utilize thermo-compressed, printing coating or metal die to be shaped, come the landfill aforementioned resin.
So, can positively make a kind of optical semiconductor device base station, it be utilize resin positively landfill hold part section and signal connecting element except being formed at a plurality of wafers on metal framework, intensity is improved.
And can be made as the material of aforementioned landfill resin thermosetting resin or thermoplastic resin this moment, is preferably, and comprises fibre reinforced materials in aforementioned landfill resin.And, can use glass fibre, as the fibre reinforced materials that comprises in aforementioned landfill resin.
If use the resin of this kind material as the landfill resin, can make the more excellent optical semiconductor device base station of a kind of thermal endurance and intensity.
And this moment, utilizing the aforementioned resin landfill tabular to form, make in the subsequent handling of aforementioned optical semiconductor device with the operation of base station, can implement to the surface of aforementioned base station the surface treatment of grinding and/or resist-coating.
So, can make a kind of high-quality optical semiconductor device base station.
And, according to the present invention, provide a kind of optical semiconductor device base station, have a plurality of wafers and hold section, be used for holding semiconductor wafer; And a plurality of signal connecting element are electrically connected at the aforementioned semiconductor wafer that is held, and provide electrode part to the outside; Wherein, described optical semiconductor device is characterised in that with base station:
Be made of metal framework and resin matrix section, wherein, described metal framework is formed with aforementioned a plurality of wafer and holds section and have thickness holds the thickness of section less than these a plurality of wafers the aforementioned signal connecting element of part; Described resin matrix section, so that aforementioned a plurality of wafer holds surface and the back side of section exposes simultaneously, and at least one mode of showing out of aforementioned signal connecting element, landfill to the aforementioned a plurality of wafers on being formed at the aforementioned metal framework hold the part section and signal connecting element, and described optical semiconductor device forms tabular with base station.
If this kind optical semiconductor device base station can utilize the wafer at while exposing surface and the back side to hold section so, effectively discharge the heat that semiconductor wafer produces.And, if the optical semiconductor device base station is to be made of resin matrix section, described resin matrix section landfill is to holding section and have part thickness holds section less than wafer the signal connecting element of part of thickness except being formed at a plurality of wafers on metal framework, intensity will be improved so, and warpage reduces.By using this optical semiconductor device base station, can realize the optical semiconductor device of the stable and high-durability of a kind of mechanicalness, high-cooling property.
At this moment, on the surface that is carried with aforesaid semiconductor wafer one side of aforementioned optical semiconductor device with base station the part of exposing that the optical semiconductor device base station can hold section at electrode part and the aforementioned a plurality of wafer except aforementioned a plurality of signal connecting element, has resin formation part.
If so have the resin formation parts such as speculum or lens on the surface of optical semiconductor device with base station, just can seek optical semiconductor device with the multifunction of base station, and further improve durability.
At this moment, be preferably, so that aforementioned optical semiconductor device holds the mode of the thickness of section with the thickness of the part that is formed with aforementioned each signal connecting element of base station greater than aforementioned each wafer, the landfill aforementioned resin forms.
If this kind optical semiconductor device base station, so when at optical semiconductor device when forming the resin formation part such as speculum or lens on the surface of base station, can suppress to produce the resin burr on the surface of each signal connecting element.
And this moment, can make the material of aforementioned resin parent section is thermosetting resin or thermoplastic resin, is preferably, and aforementioned resin parent section comprises fibre reinforced materials.And can make the fibre reinforced materials that aforementioned resin parent section comprises is glass fibre.
If resin matrix section is this kind material, just can make the more excellent optical semiconductor device base station of a kind of thermal endurance and intensity.
And, the invention provides a kind of optical semiconductor device, be characterised in that, hold in section at described a plurality of wafers of optical semiconductor device of the present invention with base station, be carried with respectively semiconductor wafer, and be split to form by cutting (dicing).
This kind optical semiconductor device mechanicalness is stable and have high-durability, high-cooling property, is suitable for using the situation of the semiconductor wafer that produces amount of heat or situation about using under hot and humid environment.
(effect of invention)
With in the manufacturing of base station, prepare metal framework at optical semiconductor device of the present invention, be formed with a plurality of wafers on described metal framework and hold section and have thickness holds the thickness of section less than these a plurality of wafers the signal connecting element of part; Utilize the resin landfill and hold part section and signal connecting element except being formed at a plurality of wafers on metal framework, and the surface and the back side that make a plurality of wafers hold section exposes simultaneously, and at least one of signal connecting element shows out; And described optical semiconductor device forms tabular with base station; Therefore, can utilize wafer to hold section, effectively discharge the heat that semiconductor wafer produces, can make the optical semiconductor device base station that a kind of intensity is improved and warpage reduces.By using this optical semiconductor device base station, can realize the optical semiconductor device of the stable and high-durability of a kind of mechanicalness, high-cooling property.
Description of drawings
Fig. 1 illustrates the figure that optical semiconductor device of the present invention is used an example of base station.
Fig. 2 A be Fig. 1 the part of being surrounded by dotted line overlook enlarged drawing.
Fig. 2 B is the profile after the part of being surrounded by dotted line of Fig. 1 is amplified.
Fig. 3 A, Fig. 3 B, Fig. 3 C, Fig. 3 D illustrate the profile that optical semiconductor device of the present invention is used another routine part of base station.
Fig. 4 A, Fig. 4 B are the key diagrams that explanation optical semiconductor device of the present invention is used the surface condition of base station.
Fig. 5 illustrates the vertical view that optical semiconductor device of the present invention is used the metal framework of base station.
Fig. 6 illustrates optical semiconductor device of the present invention with the flow chart of an example of the operation of landfill resin in the metal framework of the manufacture method of base station.
Fig. 7 A, Fig. 7 B are the figure that illustrates an example of optical semiconductor device of the present invention.
Fig. 8 is the figure that illustrates another example of optical semiconductor device of the present invention.
Fig. 9 is the figure that illustrates the another example of optical semiconductor device of the present invention.
Description of reference numerals
1 optical semiconductor device base station
2 wafers hold section
3 signal connecting element
4 metal frameworks
5 resin matrix sections
6 fibre reinforced materials
7 resin formation parts
8 linking parts
10 optical semiconductor devices
11 semiconductor wafers
12 bonding wires
13 sealings
14 speculums
Embodiment
Below, example of the present invention is described, but the present invention is not limited to these examples.
Before, when especially using optical semiconductor device under hot environment, have following problem: reflectivity descended, or light flux values declines to a great extent along with the passing of service time.
Therefore, the inventor advances to make great efforts research repeatedly for solving this kind problem.Known had been before in being carried with the part material of semiconductor wafer, used silicone (silicone) material with fibre reinforced materials, to improve thermal endurance.But, especially in the light of semiconductor wafer is exported higher and can be produced the optical semiconductor device of amount of heat, so also insufficient, make the heat that semiconductor wafer produces effectively discharge very important.In the situation that use optical semiconductor device in the environment that for example headlight (headlight) equitemperature of the engine of automobile and its periphery rises, important too.
The inventor studies in order to realize high-cooling property, result is expected: if surface and the back side of the part that the metal by the section that holds of semiconductor wafer consists of are exposed, just can effectively discharge the heat that semiconductor wafer produces, further, a kind of this wafer is held the base station that section and the resin compounded with fibre reinforced materials form by using, make optical semiconductor device, can improve intensity, thereby complete the present invention.
At first, optical semiconductor device base station of the present invention is described.Optical semiconductor device of the present invention can adopt the shape of set base station with base station, and this shape can be supported large tracts of land printed base plate or matrix array encapsulation (matrix array package, MAP) mode of production.Therefore, optical semiconductor device can constitute with base station, and a plurality of optical semiconductor wafers are installed.
As shown in Figure 1, optical semiconductor device has with base station 1: a plurality of wafers hold section 2, are used for holding semiconductor wafer; And a plurality of signal connecting element 3 are electrically connected at the semiconductor wafer that is held, and provide electrode part to the outside.
Quantity or configuration that each wafer holds section and signal connecting element are not particularly limited, and preferred disposition is for example, can pass through cutting, and be divided into less independent unit.
As shown in Figure 1, each wafer holds section 2 and signal connecting element 3 is to be formed on metal framework 4.
Optical semiconductor device is to be made of with resin matrix section 5 metal framework 4 with base station 1, and wherein, described metal framework 4 has a plurality of wafers and holds section 2 and signal connecting element 3; And resin matrix section 5 is that landfill is to the part that holds except a plurality of wafers section 2 and signal connecting element 3; And described optical semiconductor device forms tabular with base station 1.
Fig. 2 A be Fig. 1 the part of being surrounded by dotted line overlook enlarged drawing, Fig. 2 B is the profile of the part of being surrounded by dotted line of Fig. 1.
As shown in Fig. 2 A, Fig. 2 B, this part has: 1 wafer holds section 2; And 2 signal connecting element 3 are electrically connected at the semiconductor wafer that holds herein.By at least one of this signal connecting element 3 showed out, and provide electrode part to the outside.Herein, the one side of signal connecting element 3 need not all to expose, and exposes a part and gets final product.Signal connecting element 3 can constitute, and can utilize the welding of for example soldering or golden tin (Au-Sn) that the gold thread that connects on semiconductor wafer is installed.
Wafer holds and is provided with crystal grain liner (die pad) (not shown) in section 2, and it is for supporting semiconductor wafer.
As shown in Fig. 2 B, wafer holds surface and the back side of section 2 and exposes simultaneously.As mentioned above, wafer holds section 2 and is formed on metal framework, and is made of metal.So, be exposing surface and the back side simultaneously if the wafer that is made of metal holds the structure of section 2, so just can make the heat that semiconductor wafer produces effectively be released into the outside from the face that exposes that wafer holds section.Herein, wafer holds section 2 can be as shown in Fig. 3 B, and a part has the breach that runs through surface and the back side, or as shown in Fig. 3 D, has the part of thinner thickness on a part.
And, the back side that also can utilize wafer to hold section 2 to expose, namely with the surface of the surface opposite that is carried with semiconductor wafer, as outer electrode.
Signal connecting element 3 has thickness and holds the part of the thickness of section 2 less than wafer, and landfill has resin in this thinner part.And in wafer held space between section 2 and signal connecting element 3, also landfill had resin, thereby formed resin matrix section 5.So, optical semiconductor device with the structure of base station 1 is: be formed with resin matrix section 5, described resin matrix section 5 is that landfill has resin in having a plurality of wafers and holding the gap of section 2 and the metal framework 4 of signal connecting element 3.Utilize this structure, can improve optical semiconductor device with mechanical strength and the thermal endurance of base station 1, can reduce the warpage that optical semiconductor device is used base station 1.
Can make the material of resin matrix section 5 herein, is thermosetting resin or thermoplastic resin.Consider high-fire resistance or high-durability, expect to be polyimide resin or silicone resin constituent.Silicone resin has tolerance to UV degradation, at high temperature can stablize use.And, comprise fibre reinforced materials 6 by making resin matrix section 5, can make optical semiconductor device with the thermal endurance of base station, intensity, and ultra-violet resistance more excellent.If optical semiconductor device is excellent with the ultra-violet resistance of base station, when holding the semiconductor wafer that discharges blue light or ultraviolet light, can make the life-span of optical semiconductor device longer so.As this fibre reinforced materials, can use for example glass fibre.
And resin matrix section 5 is also as the insulator in and out of the electric signal of signal connecting element 3, and plays a role.
And, in order to provide electrode part to the outside, at least one the showing out of signal connecting element 3 gets final product, can be as shown in Fig. 2 B, optical semiconductor device with the surface of base station 1 (above) side exposes, also can be as shown in Fig. 3 B, optical semiconductor device with the back side of base station 1 (below) side exposes.Certainly, also can all expose both sides.
And as shown in Fig. 3 A, Fig. 3 C, signal connecting element 3 can have thickness and hold the part of the thickness of section 2 less than the wafer on exposing surface and two sides, the back side, can the above-mentioned resin matrix of landfill section 5, improve mechanical strength and stable on heating effect to play.Certainly, also can be as shown in Fig. 2 B, Fig. 3 D, the thickness of all signal connecting element 3 all holds the thickness of section 2 less than the wafer on exposing surface and two sides, the back side.
The optical semiconductor device of the application of the invention is with base station 1, can make the optical semiconductor device of the stable and high-durability of a kind of mechanicalness, high-cooling property.
As shown in Fig. 4 A, optical semiconductor device base station of the present invention, do not have resin formation part on the surface of semiconductor wafer being carried with, can be as wafer (chip on board on support plate, COB) base station, also can be carried with on the surface of semiconductor wafer as shown in Figure 4 B, forming and use such as the resin formation parts such as speculum 7.
As shown in Fig. 3 D, when forming this resin formation part 7, can not form resin formation part on the part of signal connecting element 3, and it is exposed, so that the electrode part that will provide to the outside also is arranged on the surface that is carried with semiconductor wafer one side.
And, also can utilize resin formation part, cover and be positioned at the part of periphery that above-mentioned wafer holds the crystal grain liner of section.
And, be preferably, when landfill resin matrix section, make optical semiconductor device hold the thickness of section greater than each wafer with the thickness of the part that is formed with each signal connecting element 3 of base station.Can make the difference of these thickness be, for example tens microns left and right.
If this kind optical semiconductor device base station, so when at optical semiconductor device when forming the resin formation part such as speculum or lens on the surface of base station, can suppress to produce the resin burr on the surface of each signal connecting element.So, the metal surface of exposing is kept high-quality, and need not to carry out blasting treatment (blasting) or water spray processing (water jet).
Secondly, the optical semiconductor device of the present invention manufacture method of base station is described.
At first, prepare metal framework 4 as shown in Figure 5, it has a plurality of wafers and holds section 2 and signal connecting element 3, and forms signal connecting element 3 and have thickness and hold the part of the thickness of section 2 less than wafer.A plurality of wafers of this metal framework 4 hold section 2 and signal connecting element 3, can form by for example etching metal plate.Namely, by the following method, form a plurality of wafers and hold section 2 and signal connecting element 3: the part that wafer is held section 2 is without etching and become the part of signal connecting element 3, etch partially (half etching), wafer except linking part 8 is held part between section 2 and signal connecting element 3, carry out total eclipse and carve (full etching).So, just can easily prepare metallic plate with low cost.And, linking part 8 can be set, it be for each wafer that links respectively metal framework 4 hold between section 2, and each signal connecting element 3.
Secondly, utilize a plurality of wafers of resin landfill except being formed at metal framework 4 on to hold part section 2 and signal connecting element 3, and form tabular.At this moment, the landfill resin, expose simultaneously at the surface and the back side that make a plurality of wafers hold section 2, and at least one of signal connecting element 3 shows out.
As the method for landfill resin, the method for utilizing thermo-compressed, printing coating or metal die to be shaped is for example arranged.With reference to Fig. 6, thermal pressure welding method is described herein.
And, can be as required, on holding the surface of section 2 and signal connecting element 3, pastes the wafer of metal framework 4 in advance the resin tapes such as Kapton Tape, suppress the resin burr that produces when the landfill resin.
At first, make resin prepreg (prepreg sheet) ((a) in Fig. 6).As the material of resin, can use thermosetting resin or thermoplastic resin.And, can comprise fibre reinforced materials in resin, so, can make a kind of optical semiconductor device base station, its thermal endurance, intensity, and ultra-violet resistance more excellent.Can use glass fibre, as fibre reinforced materials.
When use comprises the resin of fibre reinforced materials, for example thickness fibre reinforced materials that is 50～70 about μ m be impregnated in be dissolved with resin and add in the solvent of material, then, remove unnecessary solvent, form sheet.When using the resin of fiber reinforcement-containing not, utilize squeegee (squeegee) or sprayer (spray), the solvent of resin and interpolation material will be dissolved with, evenly coat as polytetrafluoroethylene (polytetrafluoro ethylene, PTFE) fluorine of resin film is on film, and forms sheet.
Secondly, the prepreg that is made is fed in stove, makes its drying ((b) in Fig. 6).With the prepreg of drying, cut ((c) in Fig. 6) according to the shape of the metal framework of preparing.The prepreg of this cutting is chimeric or fit on metal framework ((d) in Fig. 6).At this moment, also can make a plurality of prepreg laminations.When using the resin of fiber reinforcement-containing, be preferably, when making the prepreg lamination, make relative to each other 90-degree rotation of the fibre reinforced materials layer that comprises in prepreg.So, can improve the intensity that optical semiconductor device is used base station.And, be preferably, use the prepreg that there is no fibre reinforced materials in the top of the prepreg of lamination and bottom, so that with the trickle part of resin landfill to metal framework.
And, when at the above-mentioned metal framework of etching and when prepreg is cut according to metal framework, if on metal framework the positioning datum position, because service behaviour will improve, therefore comparatively preferred.
Secondly, make chimeric or fit in prepreg and metal framework thermo-compressed on metal framework, and forming tabular ((e) in Fig. 6).So, fetch the landfill resin by utilizing hot pressing, make prepreg soften, dissolve, and can with resin positively landfill to the trickle part in the gap of metal framework.Then, the metal framework of thermo-compressed landfill resin is cooling with utilizing, and the resin tape of as required surface being pasted is peeled off, and apply milled processed from the teeth outwards, resist-coating processing etc.So, complete the optical semiconductor device base station.
And, the problems such as cutting precision due to prepreg, cause being difficult between PN or crystal grain liner and electrode between trickle part on configuration during prepreg, can make the thickness attenuation of the prepreg that for example there is no fibre reinforced materials, or after the thermo-compressed operation printing process of setup and use squeegee.
Secondly, the method for utilizing the printing coating to come the landfill resin is described.
As required, on holding the surface of section 2 and signal connecting element 3, pastes the wafer of metal framework 4 in advance the resin tape such as Kapton Tape.
At first, with the part of aqueous resin-coated landfill resin in metal framework.At this moment, be not coated with on oriented reference position or identification mark.
Secondly, carry out coolingly after making the metal framework thermmohardening of completing coating, the resin tape of as required surface being pasted is peeled off, and apply milled processed from the teeth outwards, resist-coating processing etc.So, complete the optical semiconductor device base station.
Utilize this kind optical semiconductor device of the present invention with the manufacture method of base station, can make a kind of optical semiconductor device base station, it can utilize the wafer at while exposing surface and the back side to hold section, effectively discharges the heat that semiconductor wafer produces.And, signal connecting element has thickness and holds the part of the thickness of section less than wafer, utilize the resin landfill and hold part section and signal connecting element except being formed at a plurality of wafers on metal framework, and form tabular, thus, can make the optical semiconductor device base station that a kind of intensity is improved and warpage reduces.
Further, also the cut-out operation can be set, be used for optical semiconductor device is divided into less independent unit with base station.
Use in the manufacture method of base station at optical semiconductor device of the present invention, on the surface that is carried with semiconductor wafer one side of optical semiconductor device with base station the part of exposing that can hold section at electrode part and a plurality of wafer except a plurality of signal connecting element, make ester moulding.At this moment, can utilize the clamping part of exposing of metal die, and be shaped by compression mod (transfer mold) filling moulding material.
So, can at optical semiconductor device with on the surface of base station, form the resin formation parts such as speculum or lens, and can make the H.D optical semiconductor device base station that a kind of durability is able to further raising.
Be preferably, before ester moulding, with on the surface of base station, apply argon (Ar) plasma treatment or ultraviolet and ozone processing etc. at optical semiconductor device, in order to improve resin formation part to the adherence of optical semiconductor device with the surface of base station.
And, when utilizing the resin landfill, so that optical semiconductor device forms when tabular with base station, be preferably, when the landfill resin, make thickness that optical semiconductor device holds section with each wafer of Thickness Ratio of the part that is formed with each signal connecting element of base station greatly for example tens microns left and right.
So, when at optical semiconductor device when forming the resin formation part such as speculum or lens on the surface of base station, the pressure when utilizing metal die clamping is improved, and can suppress to produce the resin burr on the surface of each signal connecting element.
Secondly, optical semiconductor device of the present invention is described.
Optical semiconductor device of the present invention is the optical semiconductor device that forms in the manufacture method manufacturing that utilizes the invention described above to be held in section with a plurality of wafers of base station, is carried with respectively semiconductor wafer, and cuts apart by cutting.
An example of optical semiconductor device of the present invention shown in Fig. 7 A, Fig. 7 B.As shown in Fig. 7 A, Fig. 7 B, optical semiconductor device 10 of the present invention, to hold at metal wafer to be carried with semiconductor wafer 11 in section, and be to utilize for example adhesion promotion material of golden projection (gold bump), golden tin (Au-Sn) scolder, scolding tin, sticking brilliant material (die bond), adhere to wafer and hold in section.Semiconductor wafer 11 and 2 signal connecting element 3 are electrically connected by bonding wire (bonding wire) 12.As shown in Fig. 7 B, being carried with on a side of semiconductor wafer 11, be formed with sealing 13, signal connecting element 3 is exposed on a side below optical semiconductor device 10, thereby forms electrode part.For example can using, silicone resin as sealing, also can add the interpolation material.
The metal wafer that is carried with semiconductor wafer 11 holds surface and the back side of section 2 and exposes simultaneously, and the heat that semiconductor wafer 11 produces can be released into the outside effectively from the face that exposes that wafer holds section 2.And signal connecting element 3 has thickness and holds the part of the thickness of section 2 less than wafer, utilizes the part of resin landfill except wafer holds section 2 and signal connecting element 3, and forms tabular.So, mechanical strength and thermal endurance improve, and warpage reduces.
So, optical semiconductor device of the present invention is that mechanicalness is stable and have high-durability, a high-cooling property.
Fig. 8 is the figure that illustrates another example of optical semiconductor device of the present invention.As shown in Figure 8, sealing 13 forms lenticular.And speculum 14 forms and surrounds optical semiconductor wafer 11.This speculum 14, the preferred silicone constituent that contains the interpolation materials such as titanium oxide that uses, and the light that is received by optical semiconductor wafer 11 or discharge is had reflectivity.By using the silicone constituent, can realize high-durability, and the light that can discharge optical semiconductor wafer 11 for a long time carries out the light distribution.
Fig. 9 is the figure that illustrates the another example of optical semiconductor device of the present invention.As shown in Figure 9, the semiconductor wafer that this optical semiconductor device uses not is to be electrically connected by bonding wire as described above, but directly is electrically connected at the flip chip (flip chip) of signal connecting element 3.The middle body that wafer holds section 2 has breach, and landfill has resin in the part of breach, thereby forms resin matrix section.At this moment, the heat that also flip chip can be produced holds from wafer surface and the back side that section 2 exposes and fully effectively discharges.
And sealing 13 also can use for example glass material.And, as shown in Figure 9, be provided with the space between semiconductor wafer and sealing, can fill up air, argon gas, and the gas such as nitrogen in this space.
Optical semiconductor device of the present invention can be applied in various fields with base station and the optical semiconductor device that uses this optical semiconductor device to form with the base station manufacturing, be applicable to following field, such as the floodlighting of backlight, the lighting device that is used for projection of: the demonstration means of large area display or television equipment or general lighting or spotlighting (spot light) etc.
[embodiment]
Below, be described more specifically the present invention by embodiments of the invention and comparative example, but the present invention is not limited to these embodiment.
(embodiment)
According to the manufacture method of optical semiconductor device of the present invention with base station, make optical semiconductor device base station of the present invention as shown in Figure 1.
Use the copper alloy (TAMAC194 of iron content (Fe), copper (the Mitsubishi Shindoh Co. of limited company stretches in Mitsubishi, Ltd.) make) as metal framework, use the interpolation material that comprises as the silicone resin of titanium oxide, as resin matrix section.In resin matrix section, comprise glass fibre, as fibre reinforced materials.
At first, the metallic plate that is the TAMAC194 of 0.5mm with thickness cuts into the A4 size, and utilizes etching preparation metal framework as shown in Figure 5.At this moment, the wafer section of holding does not carry out etching, will etch partially 0.3mm as a following side of the part of signal connecting element, and making thickness is 0.2mm.At this moment, use laser microscope to measure etch quantity.
Secondly, make prepreg, so as in the metal framework landfill resin.Be in the solvent of the glass fiber impregnated interpolation material in being dissolved with silicone resin and titanium oxide about 70 μ m, then, to remove unnecessary solvent, and form sheet thickness.In addition, using fluorine is film (PTFE resin film), makes the prepreg that does not contain glass fibre.
These prepregs that are made are fed in the stove of 100 ℃, solvent are fully volatilized and dry.
Secondly, with the prepreg that is made, according to the shape cutting of metal framework, and be embedded in the section of running through that utilizes the metal framework that etching method makes or the recess that fits in a following side of signal connecting element.At this moment, 3 prepregs that contain glass fibre of lamination, and do not contain the prepreg of glass fibre at the up and down lamination.Herein, when 3 of laminations contained the prepreg of glass fibre, the glass layer of the prepreg in the middle of making was the angle of 90 ° with the glass layer of the prepreg of up and down.
Then, under 180 ℃, 10Mpa, the condition of 120 hours, prepreg and metal framework are carried out thermo-compressed, coolingly make its sclerosis.At this moment, make the Thickness Ratio wafer of the part that is formed with signal connecting element hold the large 0.001mm of thickness of section.Then, utilize screen printing (screen printing), painting erosion resistant agent on the surface of base station, and cut into the square of 100mm.And, utilize compression mod, with on the surface of base station, speculum is shaped at optical semiconductor device, hold the thickness of section greater than wafer due to the thickness that makes the part that is formed with signal connecting element, therefore can prevent the resin burr on the surface of signal connecting element.
Utilization is measured and is estimated the optical semiconductor device of so making and hold the thermal conductivity of the base station thickness direction of section with the wafer of base station according to the method for JIS A 1412-2.
The results are shown in table 1.As shown in table 1, thermal conductivity can efficiently discharge higher than the result of aftermentioned comparative example the heat that semiconductor wafer produces.And the thermal conductivity of copper coin in the reference, come to the same thing as can be known.Reason is, the thermal conductivity of the material that metal framework uses (TAMAC194) is close to the thermal conductivity of copper.
And, utilize the method according to JIS Z 8722, measure and estimate and utilize the optical semiconductor device that the embodiment manufacturing forms to hold the reflectivity of section with the wafer of base station.By the reflectivity that compares initial reflectance and measure after testing under hot and humid environment, estimate., by at 85 ℃, 85% time, take care of base station 1000 hours herein, carry out the hot and humid environment test.
The results are shown in table 2.As shown in table 2, the value of initial reflectance is higher, and the reflectivity after initial reflectance and test does not almost have difference, keeps high reflectance.On the other hand, in the aftermentioned comparative example, the reflectivity after the initial reflectance of AlN substrate, test is all lower, although FR-4(epoxy impregnation glass fibre basal plate) initial reflectance higher, the reflectivity after testing declines to a great extent.
Secondly, utilize the method according to JIS C 8152, measure and estimate initial value and the value after test under the hot and humid environment of condition same as described above of light flux values.Wherein, respectively to the test duration under hot and humid environment be 100 hours, 500 hours, and the situation of 1000 hours estimate.Herein, about light flux values, the initial stage light flux values in embodiment is 100%.
The results are shown in table 3.As shown in table 3, the decline degree from the initial stage light flux values of light flux values after test is very little under hot and humid environment as can be known, can keep with the aftermentioned comparative example in the equal above light flux values of ceramic AlN substrate.
So, the optical semiconductor device that utilizes manufacture method manufacturing of the present invention to form is excellent with thermal diffusivity, the high temperature durability of base station, even if under hot and humid environment, the optical semiconductor device that uses optical semiconductor device thus to form with the base station manufacturing also can the inhibitory reflex rate or the decline of light flux values.
(comparative example)
Make common AlN(aluminium nitride) substrate and FR-4 substrate (infiltrate in the cloth of glass fibre epoxy resin, carry out the substrate that thermmohardening is processed), and the compound abutment structure that does not have metal framework of the present invention and resin, and with embodiment similarly, estimate thermal conductivity, reflectivity, and light flux values.
Thermal conductivity the results are shown in table 1.As shown in table 1, as can be known compared to embodiment, thermal conductivity is lower, and the release efficiency of the heat that semiconductor wafer produces worsens.
Reflectivity the results are shown in table 2.As shown in table 2, in the AlN substrate, the reflectivity after initial reflectance value, test all worsens, and in the FR-4 substrate, although the initial reflectance value is identical with embodiment, declines to a great extent after test.
Light flux values the results are shown in table 3.As shown in table 3, can keep in an embodiment the equal above light flux values of ceramic AlN substrate.In the FR-4 substrate, As time goes on, light flux values significantly worsens.
[table 1]
[table 2]
[table 3]
In addition, the present invention is not limited to described example.Described example is illustration, has the structure identical with the described technological thought essence of claims of the present invention, and the technical scheme of performance same function effect, all is included in technical scope of the present invention.
Claims (27)
1. the manufacture method of an optical semiconductor device use base station, be to make the method that optical semiconductor device is used base station, and described optical semiconductor device has a plurality of wafers with base station and holds section, is used for holding semiconductor wafer; And a plurality of signal connecting element are electrically connected at the aforementioned semiconductor wafer that is held, and provide electrode part to the outside; Wherein, described optical semiconductor device is characterised in that to have following operation with the manufacture method of base station:
Prepare the operation of metal framework, described metal framework is formed with aforementioned a plurality of wafer and holds section and aforementioned signal connecting element, and this signal connecting element has thickness and holds the part of the thickness of section less than these a plurality of wafers; And,
Make the aforementioned optical semiconductor device operation of base station, so that holding surface and the back side of section, exposes simultaneously aforementioned a plurality of wafer, and at least one mode of showing out of aforementioned signal connecting element, utilize the aforementioned a plurality of wafers of resin landfill on being formed at the aforementioned metal framework to hold part section and signal connecting element, and form described optical semiconductor device tabular with base station.
2. optical semiconductor device as claimed in claim 1 with the manufacture method of base station, wherein, in the operation of preparing the aforementioned metal framework, by etching metal plate, holds section and signal connecting element and form aforementioned a plurality of wafer.
3. optical semiconductor device as claimed in claim 1 is with the manufacture method of base station, wherein, has following operation: on the surface that be carried with aforesaid semiconductor wafer one side of aforementioned optical semiconductor device with base station the part of exposing that electrode part and aforementioned a plurality of wafer except aforementioned a plurality of signal connecting element hold section, carry out ester moulding.
4. optical semiconductor device as claimed in claim 2 is with the manufacture method of base station, wherein, has following operation: on the surface that be carried with aforesaid semiconductor wafer one side of aforementioned optical semiconductor device with base station the part of exposing that electrode part and aforementioned a plurality of wafer except aforementioned a plurality of signal connecting element hold section, carry out ester moulding.
5. use the manufacture method of base station to the described optical semiconductor device of any one in claim 4 as claim 1, wherein, utilizing the aforementioned resin landfill, aforementioned optical semiconductor device is formed in tabular operation with base station, so that aforementioned optical semiconductor device holds the mode of the thickness of section with the thickness of the part that is formed with aforementioned each signal connecting element of base station greater than aforementioned each wafer, come the landfill aforementioned resin.
6. use the manufacture method of base station to the described optical semiconductor device of any one in claim 4 as claim 1, wherein, utilizing the aforementioned resin landfill, aforementioned optical semiconductor device is formed in tabular operation with base station, utilize thermo-compressed, printing coating or metal die to be shaped, come the landfill aforementioned resin.
7. optical semiconductor device as claimed in claim 5 is with the manufacture method of base station, wherein, utilizing the aforementioned resin landfill, aforementioned optical semiconductor device is formed in tabular operation with base station, utilize thermo-compressed, printing coating or metal die to be shaped, come the landfill aforementioned resin.
As claim 1 to the manufacture method of the described optical semiconductor device of any one in claim 4 with base station, wherein, the material of aforementioned landfill resin is made as thermosetting resin or thermoplastic resin.
9. optical semiconductor device as claimed in claim 5 is with the manufacture method of base station, wherein, the material of aforementioned landfill resin is made as thermosetting resin or thermoplastic resin.
10. optical semiconductor device as claimed in claim 6 is with the manufacture method of base station, wherein, the material of aforementioned landfill resin is made as thermosetting resin or thermoplastic resin.
11. optical semiconductor device as claimed in claim 7 is with the manufacture method of base station, wherein, the material of aforementioned landfill resin is made as thermosetting resin or thermoplastic resin.
12. to the manufacture method of the described optical semiconductor device of any one in claim 4 with base station, wherein, comprise fibre reinforced materials in aforementioned landfill resin as claim 1.
13. optical semiconductor device as claimed in claim 11 wherein, comprises fibre reinforced materials in aforementioned landfill resin with the manufacture method of base station.
14. optical semiconductor device as claimed in claim 12 wherein, uses glass fibre, as the fibre reinforced materials that comprises in aforementioned landfill resin with the manufacture method of base station.
15. optical semiconductor device as claimed in claim 13 wherein, uses glass fibre, as the fibre reinforced materials that comprises in aforementioned landfill resin with the manufacture method of base station.
16. use the manufacture method of base station to the described optical semiconductor device of any one in claim 4 as claim 1, wherein, utilizing the aforementioned resin landfill tabular to form, make in the subsequent handling of aforementioned optical semiconductor device with the operation of base station, to the surface treatment of the surface enforcement grinding of aforementioned base station and/or resist-coating.
17. the optical semiconductor device as claimed in claim 15 manufacture method of base station, wherein, utilizing the aforementioned resin landfill tabular to form, make in the subsequent handling of aforementioned optical semiconductor device with the operation of base station, to the surface treatment of the surface enforcement grinding of aforementioned base station and/or resist-coating.
18. an optical semiconductor device base station has a plurality of wafers and holds section, is used for holding semiconductor wafer; And a plurality of signal connecting element are electrically connected at the aforementioned semiconductor wafer that is held, and provide electrode part to the outside; Wherein, described optical semiconductor device is characterised in that with base station:
Be made of metal framework and resin matrix section, wherein, described metal framework is formed with aforementioned a plurality of wafer and holds section and the aforementioned signal connecting element of part that has thickness and hold less than these a plurality of wafers the thickness of section; Described resin matrix section, so that aforementioned a plurality of wafer holds surface and the back side of section exposes simultaneously, and at least one mode of showing out of aforementioned signal connecting element, landfill to the aforementioned a plurality of wafers on being formed at the aforementioned metal framework hold the part section and signal connecting element, and described optical semiconductor device forms tabular with base station.
19. optical semiconductor device base station as claimed in claim 18, wherein, on the surface that be carried with aforesaid semiconductor wafer one side of aforementioned optical semiconductor device with base station the part of exposing that electrode part and aforementioned a plurality of wafer except aforementioned a plurality of signal connecting element hold section, has resin formation part.
20. optical semiconductor device base station as claimed in claim 18, wherein, so that aforementioned optical semiconductor device holds the mode of the thickness of section with the thickness of the part that is formed with aforementioned each signal connecting element of base station greater than aforementioned each wafer, landfill aforementioned resin parent section forms.
21. optical semiconductor device base station as claimed in claim 19, wherein, so that aforementioned optical semiconductor device holds the mode of the thickness of section with the thickness of the part that is formed with aforementioned each signal connecting element of base station greater than aforementioned each wafer, landfill aforementioned resin parent section forms.
22. to the described optical semiconductor device base station of any one in claim 21, wherein, the material of aforementioned resin parent section is thermosetting resin or thermoplastic resin as claim 18.
23. to the described optical semiconductor device base station of any one in claim 21, wherein, aforementioned resin parent section comprises fibre reinforced materials as claim 18.
24. optical semiconductor device base station as claimed in claim 22, wherein, aforementioned resin parent section comprises fibre reinforced materials.
25. optical semiconductor device base station as claimed in claim 24, wherein, the fibre reinforced materials that aforementioned resin parent section comprises is glass fibre.
26. optical semiconductor device, be characterised in that, holding in section as claim 18 to aforementioned a plurality of wafers of the described optical semiconductor device of any one in claim 21 with base station, be carried with respectively semiconductor wafer, and be split to form by cutting.
27. an optical semiconductor device is characterised in that, holds in section at aforementioned a plurality of wafers of optical semiconductor device as claimed in claim 25 with base station, is carried with respectively semiconductor wafer, and is split to form by cutting.
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| JP2011273911A JP5795251B2 (en) | 2011-12-14 | 2011-12-14 | Optical semiconductor device base, method for manufacturing the same, and optical semiconductor device |
| JP2011-273911 | 2011-12-14 |
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| KR (1) | KR101945057B1 (en) |
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| KR20130069437A (en) * | 2011-12-14 | 2013-06-26 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Base for optical semiconductor device and method for preparing the same, and optical semiconductor device |
| CN106981557A (en) * | 2017-04-07 | 2017-07-25 | 光创空间（深圳）技术有限公司 | The method for packing and encapsulating structure of a kind of optoelectronic semiconductor chip |
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| JP6461991B2 (en) * | 2014-10-28 | 2019-01-30 | シャープ株式会社 | Substrate, light emitting device, and lighting device |
| JP6246879B1 (en) * | 2016-09-20 | 2017-12-13 | 株式会社東芝 | Optical semiconductor module and manufacturing method thereof |
| JP7089167B2 (en) | 2018-04-23 | 2022-06-22 | 日亜化学工業株式会社 | Light emitting device |
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| JP5795251B2 (en) | 2011-12-14 | 2015-10-14 | 信越化学工業株式会社 | Optical semiconductor device base, method for manufacturing the same, and optical semiconductor device |
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| CN101971353A (en) * | 2008-04-17 | 2011-02-09 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for producing an optoelectronic component |
| CN101971375A (en) * | 2008-05-28 | 2011-02-09 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor component and printed circuit board |
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| KR101945057B1 (en) | 2011-12-14 | 2019-02-01 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Base for optical semiconductor device and method for preparing the same, and optical semiconductor device |
| CN106981557A (en) * | 2017-04-07 | 2017-07-25 | 光创空间（深圳）技术有限公司 | The method for packing and encapsulating structure of a kind of optoelectronic semiconductor chip |
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| TWI542041B (en) | 2016-07-11 |
| JP5795251B2 (en) | 2015-10-14 |
| JP2013125867A (en) | 2013-06-24 |
| KR20130069437A (en) | 2013-06-26 |
| TW201340411A (en) | 2013-10-01 |
| CN103165794B (en) | 2016-12-28 |
| KR101945057B1 (en) | 2019-02-01 |
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