TW201340411A - Base for optical semiconductor device and method for preparing the same, and optical semiconductor device - Google Patents

Abstract

The invention provides a base for an optical semiconductor device and a method for preparing the same; and the optical semiconductor device is stable in mechanical property, high in durability, and high in radiation property. The optical semiconductor device base is provided with a plurality of chip carrying portion for carrying the semiconductor chips and a plurality of signal connecting portions electrically connected with the carried semiconductor chips and providing electrode portions. The method comprises the following steps: a step of preparing metal frame, a plurality of chip carrying portions and signal connecting portions are formed on the metal frame, and the signal connecting portion is provided with a part with the thickness smaller than that of the plurality of chip carrying portions; a step of preparing the optical semiconductor device base, so surfaces and backsides of the chip carrying portions and at least one side of the signal connecting portions are exposed, and parts of the metal frame besides the chip carrying portions and signal connecting portions are buried by resin, and a shape of the optical semiconductor device is a plate shape.

Description

Substrate for optical semiconductor device, manufacturing method thereof, and optical semiconductor device

The present invention relates to a substrate for an optical semiconductor device in which a metal and a resin are combined, a method for producing the same, and an optical semiconductor device using the substrate for an optical semiconductor device.

Optical elements such as LEDs and photodiodes are widely used in the industry because of their high efficiency and high resistance to external stress and environmental influences. In addition, in addition to high efficiency, the optical element has a long life, is light and thin, can be constructed in a variety of different configurations, and can be manufactured at relatively low cost.

For example, in order to improve the ultraviolet ray resistance and the heat resistance, a polyoxyxane material having a fiber-reinforced material in a material for a connection carrier plate on which a semiconductor wafer is mounted is known (for example, refer to Patent Document 1).

In particular, in a high-output optical semiconductor device that generates a large amount of thermal energy, it is important to have a structure having high heat resistance and at the same time improving heat dissipation.

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Publication No. 2011-521481

It is an object of the present invention to provide a method for achieving stable mechanical properties A base for an optical semiconductor device having an optical semiconductor device having high durability and high heat dissipation and a method of manufacturing the same.

In order to achieve the above object, according to the present invention, there is provided a method of manufacturing a substrate for an optical semiconductor device, comprising: a plurality of wafer loading portions for loading a semiconductor wafer, and electrically connecting to the semiconductor wafer loaded thereon, and A method of manufacturing a substrate for an optical semiconductor device in which a plurality of signal connecting portions of an electrode portion are externally provided, comprising: preparing a plurality of wafer mounting portions, and having a thickness greater than a thickness of the plurality of wafer mounting portions a step of thinning the metal frame of the signal connection portion; and embedding the resin by exposing the front surface of the plurality of wafer loading portions and exposing at least one side of the signal connection portion The step of forming the abutment for the optical semiconductor device by forming a portion of the plurality of wafer mounting portions and the signal connecting portion formed on the metal frame into a plate shape.

According to this manufacturing method, it is possible to manufacture a substrate for an optical semiconductor device which can efficiently release heat generated by a semiconductor wafer by a wafer loading portion exposed in the front surface. Further, the signal connecting portion has a portion having a thickness thinner than the thickness of the wafer loading portion, and the resin is used to embed a portion of the plurality of wafer loading portions and the signal connecting portion formed on the metal frame and formed into a plate shape. This makes it possible to manufacture a base for an optical semiconductor device having improved strength and reduced warpage. By using the base for an optical semiconductor device, light having stable mechanical characteristics and high durability and high heat dissipation can be realized. Learn semiconductor devices.

At this time, in the step of preparing the metal frame, the plurality of wafer loading portions and the signal connecting portion may be formed by etching a metal plate.

Thus, the metal plate can be easily produced at low cost.

Further, in this case, the resin may be subjected to resin removal on the surface on which one side of the semiconductor wafer for mounting the electrode portion of the plurality of signal connection portions and the exposed portion of the plurality of wafer mounting portions is mounted on the semiconductor wafer. The step of molding.

By having such a procedure, a resin molded portion such as a reflector or a lens can be formed on the surface of the base of the optical semiconductor device, and a high-performance optical semiconductor device base having further improved durability can be produced.

Further, in the step of embedding the resin and forming the optical semiconductor device substrate into a plate shape, it is preferable that the optical semiconductor device base is formed with the respective signal connecting portions. The resin is embedded in such a manner that the thickness of the portion is thicker than the thickness of each of the wafer loading portions.

When a resin molded portion such as a reflector or a lens is formed on the surface of the optical semiconductor device base, it is possible to suppress occurrence of resin burrs on the surface of each signal connecting portion.

Further, in this step, in the step of embedding the resin and forming the substrate for the optical semiconductor device into a plate shape, the resin may be embedded by thermal compression bonding, printing coating, or mold molding.

In this way, the resin can be reliably embedded in the portion of the plurality of wafer loading portions and the signal connecting portion formed on the metal frame, and can be reliably manufactured. A base for an optical semiconductor device having improved strength.

Further, in this case, a thermosetting resin or a thermoplastic resin may be used as the material of the embedded resin, and a fiber-reinforced material is preferably contained in the embedded resin. Further, glass fiber can be used as the fiber-reinforced material contained in the embedded resin.

When such a material is used as the embedding resin, a base for an optical semiconductor device having better heat resistance and strength can be produced.

Further, at this time, in the subsequent step of the step of manufacturing the aforementioned substrate for an optical semiconductor device by embedding and forming the resin into a plate shape, the surface of the abutment surface may be subjected to polishing and/or resist coating. deal with.

In this way, a high-quality base for an optical semiconductor device can be manufactured.

Further, according to the present invention, there is provided a substrate for an optical semiconductor device, comprising: a plurality of wafer loading portions for loading a semiconductor wafer, and electrically connecting the semiconductor wafer loaded thereon and providing an electrode portion to the outside A base for an optical semiconductor device having a plurality of signal connecting portions, wherein the plurality of wafer loading portions and the signal connecting portion having a thickness smaller than a thickness of the plurality of wafer mounting portions are formed a metal frame, and a plurality of wafer loading portions formed by subtracting the metal frame from the metal frame by exposing the front surface of the plurality of wafer loading portions and exposing at least one side of the signal connecting portion The resin matrix portion of the signal connection portion is formed; and is formed in a plate shape.

If a base for an optical semiconductor device is used for this purpose, the heat generated by the semiconductor wafer can be efficiently utilized by the wafer loading portion exposed in the front surface. Released. Further, if the plurality of wafer loading portions which are formed on the subtracting metal frame and the resin mother portion having a portion of the signal connecting portion having a thickness smaller than the thickness of the wafer loading portion are formed, the strength can be Lifting and warping can be reduced. By using the base for an optical semiconductor device, an optical semiconductor device having stable mechanical characteristics and high durability and high heat dissipation can be realized.

In this case, a resin molded portion may be provided on the surface on which one side of the semiconductor wafer for mounting the electrode portion of the plurality of signal connecting portions and the exposed portion of the plurality of wafer mounting portions on the side of the semiconductor wafer.

When a resin molded portion such as a reflector or a lens is provided on the surface of the optical semiconductor device base, the function of the optical semiconductor device base can be increased and the durability can be further improved.

In this case, it is preferable to embed the resin matrix portion such that the thickness of the portion of each of the optical semiconductor device bases on which the signal connection portions are formed is thicker than the thickness of each of the wafer mounting portions.

When a resin molded portion such as a reflector or a lens is formed on the surface of the optical semiconductor device base, it is possible to suppress occurrence of resin burrs on the surface of each signal connecting portion.

Further, in this case, the material of the resin matrix portion may be a thermosetting resin or a thermoplastic resin, and the resin matrix portion preferably contains a fiber reinforcing material. Further, the fiber-reinforced material contained in the resin matrix portion may be formed as a glass fiber.

If the resin matrix is made of this material, heat resistance and strength can be produced. A better base for optical semiconductor devices.

Further, according to the present invention, there is provided an optical semiconductor device characterized in that each of the semiconductor wafers is mounted on the plurality of wafer mounting portions of the optical semiconductor device base of the present invention, and is divided by dicing.

Such an optical semiconductor device has stable mechanical characteristics, high durability, and high heat dissipation, and can be suitably used in the case of using a semiconductor wafer that generates a large amount of thermal energy, or in a high-temperature and high-humidity environment.

In the present invention, in the manufacture of a substrate for an optical semiconductor device, a metal frame in which a plurality of wafer mounting portions and a signal connecting portion having a thickness smaller than a thickness of the plurality of wafer mounting portions are formed is prepared, and a portion of the plurality of wafer loading portions and the signal connecting portion formed by subtracting the metal frame by exposing at least one surface of the plurality of wafer loading portions and exposing at least one side of the signal connecting portion Since it is formed in a plate shape, the heat generated by the semiconductor wafer can be efficiently released by the wafer loading portion, and a base for an optical semiconductor device having improved strength and reduced warpage can be manufactured. By using the base for an optical semiconductor device, an optical semiconductor device having stable mechanical characteristics and high durability and high heat dissipation can be realized.

Hereinafter, embodiments of the present invention will be described, but the present invention is not limited to this.

Conventionally, when an optical semiconductor device is used in a high-temperature environment, there is a problem that the reflectance is lowered or the beam value is largely lowered as time passes.

Therefore, the inventors have carefully studied to solve such problems. Conventionally, in order to improve heat resistance, those who use a fiber reinforced material having a fiber-reinforced material in a material for mounting a semiconductor wafer are known. However, especially in an optical semiconductor device in which the light output of the semiconductor wafer is high and a large amount of thermal energy is generated, only this practice is not sufficient, and it is important to efficiently discharge the heat generated by the semiconductor wafer. This is also the case, for example, when an optical semiconductor device is used in an environment where the temperature of the automobile engine and the headlights in the vicinity thereof rises.

In order to achieve high heat dissipation, the inventors of the present invention have found that the heat generated by the semiconductor wafer can be efficiently released by exposing the inside of the surface of the portion of the semiconductor wafer to which only the metal is formed. Further, it has been found that the optical semiconductor device can be manufactured by using a substrate in which the wafer loading portion is combined with a resin having a fiber-reinforced material to improve the strength, and thus the present invention has been completed.

First, the base for an optical semiconductor device of the present invention will be described. The base for an optical semiconductor device of the present invention can be in the form of a collective base that can correspond to a large-area printed substrate or a MAP (Matrix Array Package) production method. Therefore, the optical semiconductor device base can be configured by mounting a plurality of optical semiconductor wafers.

As shown in Fig. 1, the base 1 for an optical semiconductor device has: A plurality of wafer loading sections 2 for loading semiconductor wafers, and a plurality of signal connection sections 3 electrically connected to the mounted semiconductor wafers and providing external electrodes.

The number or arrangement of the respective wafer loading portions and signal connecting portions is not particularly limited, and is preferably configured to be divided into smaller individual units by, for example, cutting.

As shown in FIG. 1, each of the wafer loading unit 2 and the signal connection unit 3 is formed on the metal frame 4.

The base 1 for an optical semiconductor device includes a metal frame 4 having a plurality of wafer loading portions 2 and a signal connecting portion 3, and a resin matrix portion embedded in a portion where the plurality of wafer loading portions 2 and the signal connecting portion 3 are subtracted. 5 is formed and formed into a plate shape.

Fig. 2(A) is an enlarged view of a portion surrounded by a broken line in Fig. 1, and Fig. 2(B) is a cross-sectional view.

As shown in Fig. 2 (A) and (B), this portion has one wafer loading unit 2 and two signal connecting portions 3 electrically connected to the semiconductor wafer mounted thereon. The electrode portion is provided to the outside by exposing at least one side of the signal connecting portion 3. Here, the single side of the signal connection portion 3 does not have to be completely exposed, and a part of it may be exposed. The signal connecting portion 3 can be configured to mount a gold wire connected to the semiconductor wafer, for example, by soldering or Au-Sn.

In the wafer loading portion 2, a die pad which is not shown in the figure for supporting the semiconductor wafer is provided.

As shown in Fig. 2(B), the inside of the front surface of the wafer loading unit 2 is exposed. As described above, the wafer loading portion 2 is formed on a metal frame and is made of a metal Composition. As described above, in the structure in which the front surface of the wafer loading unit 2 made of metal is exposed, the heat generated by the semiconductor wafer can be efficiently released from the exposed surface of the wafer loading portion to the outside. Here, as shown in FIG. 3(B), the wafer loading unit 2 may have a portion having a notch inside the surface or a portion having a small thickness as shown in FIG. 3(D).

Further, the inner surface exposed to the wafer loading portion 2, that is, the surface opposite to the surface on which the semiconductor wafer is mounted, can be used as an external electrode.

The signal connecting portion 3 has a portion having a thickness thinner than the thickness of the wafer loading portion 2, and the resin is buried in the thin portion. Further, the resin is also embedded in the space between the wafer loading portion 2 and the signal connecting portion 3 to form the resin matrix portion 5. In this manner, the optical semiconductor device base 1 has a structure in which a resin is embedded in a gap between the metal holders 4 having the plurality of wafer mounting portions 2 and the signal connecting portions 3 to form the resin matrix portion 5. According to this configuration, the mechanical strength and heat resistance of the optical semiconductor device base 1 can be improved, and the warpage of the optical semiconductor device base 1 can be reduced.

Here, the material of the resin matrix portion 5 may be a thermosetting resin or a thermoplastic resin. In view of high heat resistance and high durability, a polyimide or a polyoxymethylene resin composition is preferable. The polyoxyalkylene resin has ultraviolet ray deterioration resistance and can be stably used at a high temperature. In addition, by including the fiber-reinforced material 6 in the resin matrix portion 5, a base for an optical semiconductor device having better heat resistance, strength, and ultraviolet resistance can be formed. In the case of a substrate for an optical semiconductor device excellent in ultraviolet resistance, when a semiconductor wafer emitting blue light or ultraviolet light is mounted, the optical semiconductor device can achieve a long life. The As the fiber-reinforced material, for example, glass fiber can be used.

Further, the resin matrix portion 5 can also function as an insulator of the electrical signal entering and exiting the signal connecting portion 3.

In addition, the signal connecting portion 3 may be exposed to at least one surface in order to provide the electrode portion to the outside, and may be exposed on the surface (upper surface) side of the optical semiconductor device base 1 as shown in FIG. 2(B). Or, as shown in FIG. 3(B), it may be exposed to the inside (lower side) side of the base 1 for an optical semiconductor device. Of course, it can also be exposed to both sides.

Further, as shown in FIGS. 3(A) and (C), the signal connecting portion 3 may have a portion having a thickness smaller than that of the wafer loading portion 2 exposed on both sides of the front and back, so that the resin can be embedded. The body portion 5 achieves an effect of improving mechanical strength and heat resistance. Of course, as shown in FIG. 2(B) and FIG. 3(D), the thickness of the wafer loading portion 2 which is exposed to both sides of the signal connection portion 3 is thinner.

By using the base 1 for an optical semiconductor device of the present invention, an optical semiconductor device having stable mechanical characteristics and high durability and high heat dissipation can be manufactured.

The base for an optical semiconductor device of the present invention, as shown in Fig. 4(A), can be used without a resin molded portion on the surface on one side of the semiconductor wafer, and is used as a base corresponding to the direct package (COB) of the wafer. As shown in Fig. 4(B), a resin molded portion 7 such as a reflector is formed on the surface on one side of the semiconductor wafer to be mounted.

When the resin molded portion 7 is formed, as shown in FIG. 3(D), since the electrode portion provided to the outside is also provided on one side of the loaded semiconductor wafer On the surface, the resin molded portion 7 can be exposed without being formed on a part of the signal connecting portion 3.

Further, a part of the periphery of the die pad located in the wafer loading portion may be covered by the resin molding portion.

Moreover, it is preferable to embed the resin matrix portion 5 such that the thickness of the portion of each of the optical semiconductor device bases 1 on which the signal connection portions 3 are formed is thicker than the thickness of each of the wafer mounting portions. The difference in thickness can be, for example, 10 μm.

When a resin molded portion such as a reflector or a lens is formed on the surface of the optical semiconductor device base, it is possible to suppress occurrence of resin burrs on the surface of each signal connecting portion. Thereby, the exposed metal surface can be ensured with high quality without performing the blasting treatment or the water blasting treatment.

Next, a method of manufacturing the base for an optical semiconductor device of the present invention will be described.

First, a metal frame having a plurality of wafer loading portions 2 and signal connecting portions 3 as shown in FIG. 5 and having the signal connecting portion 3 having a thickness thinner than the thickness of the wafer loading portion 2 is prepared. 4. The plurality of wafer loading portions 2 and the signal connecting portions 3 of the metal frame 4 can be formed, for example, by etching a metal plate. That is, the portion of the wafer loading unit 2 is not etched, and the portion to be the signal connection portion 3 is half-etched, and the portion between the wafer loading unit 2 and the signal connection portion 3 is completely etched by subtracting the connection portion 8 This forms a plurality of wafer loading sections 2 and signal connection sections 3. Thus, it is easy to prepare a metal plate at a low cost. Between each of the wafer loading units 2 of the metal frame 4 and between the signal connection portions 3, respectively The connection portion 8 is provided for connection.

Then, a portion of the plurality of wafer loading portions 2 and the signal connecting portion 3 formed on the metal frame 4 is embedded by resin and formed into a plate shape. At this time, the resin is embedded in such a manner that the inside of the front surface of the plurality of wafer loading portions 2 is exposed and at least one side of the signal connecting portion 3 is exposed.

The method of embedding the resin is, for example, a method based on thermocompression bonding, printing coating, or mold molding. Here, a method according to thermal compression bonding will be described with reference to FIG.

In addition, a resin tape such as a polyimide tape can be attached to the surface of the wafer loading unit 2 and the signal connecting portion 3 of the metal frame 4 in advance to suppress the resin burrs generated when the resin is embedded.

First, a resin prepreg sheet is produced (Fig. 6(a)). A thermosetting resin or a thermoplastic resin can be used as the material of the resin. Further, the resin may contain a fiber-reinforced material, and thus a base for an optical semiconductor device having better heat resistance, strength, and ultraviolet resistance can be produced. Glass fibers can be used for the fiber-reinforced material.

When a resin containing a fiber-reinforced material is used, for example, a fiber-reinforced material having a thickness of about 50 to 70 μm may be immersed in a solvent in which a resin and an additive are dissolved, and then excess solvent is removed to form a sheet. When a resin containing no fiber-reinforced material is used, the solvent in which the resin and the additive are dissolved can be uniformly applied to a fluorine-based film such as a PTFE resin film by a brushing method or a spray method to form a sheet.

The prepared prepreg sheet is placed in a furnace for drying (Fig. 6(b)). Cut and dry after matching the shape of the prepared metal frame Prepreg sheet (Fig. 6(c)). The cut prepreg sheet is fitted or attached to a metal frame (Fig. 6(d)). At this point, a plurality of prepreg sheets can be laminated. When a resin containing a fiber-reinforced material is used, it is preferred to laminate the prepreg sheet so that the layers of the fiber-reinforced material contained in the prepreg sheet are rotated at 90° to each other. Thereby, the strength of the base for the optical semiconductor device can be improved. Further, in order to embed the resin in the fine portion of the metal frame, it is preferable to use a prepreg sheet containing no fiber-reinforced material at the uppermost surface and the lowermost portion of the laminated prepreg sheet.

When the metal frame is etched and the prepreg sheet is cut by the metal frame, if the reference position is previously positioned on the metal frame, workability can be improved, which is preferable.

Then, the prepreg sheet which is fitted or attached to the metal frame is thermocompression-bonded to the metal frame and formed into a plate shape (Fig. 6(e)). As described above, by embedding the resin by thermocompression bonding, the prepreg sheet can be softened and melted, and the resin can be surely embedded in the fine portion of the gap between the metal frames. Then, the metal frame which is embedded in the resin by thermal compression is cooled, and if necessary, the resin tape attached to the surface is peeled off, and the surface is subjected to a rubbing treatment, a resist coating treatment, or the like. Thus, the base for an optical semiconductor device can be completed.

When it is difficult to arrange the prepreg sheet between the PN or the die pad and the electrode due to problems such as the cutting precision of the prepreg sheet, for example, the thickness of the prepreg sheet not containing the fiber reinforced material can be adjusted. Thinner, or a printing step using a brushing method after the thermocompression step.

Next, a method of embedding a resin by printing and coating will be described.

Resin tape such as polyimide tape in advance may be used as necessary beforehand. The surface of the wafer loading unit 2 and the signal connection unit 3 of the metal frame 4 is attached.

First, a liquid resin is applied to a portion of the metal frame in which the resin is buried. The reference position or identification mark after positioning is not applied at this time.

Next, the metal frame to be coated is thermally cured, then cooled, and the resin tape attached to the surface is peeled off as necessary, and the surface is subjected to a rubbing treatment, a resist coating treatment, or the like. Thus, the base for an optical semiconductor device can be completed.

In the method for manufacturing a substrate for an optical semiconductor device of the present invention, it is possible to manufacture a substrate for an optical semiconductor device capable of efficiently releasing heat generated by a semiconductor wafer by a wafer loading portion exposed in the front and back surfaces. station. Further, the signal connecting portion has a portion having a thickness thinner than the thickness of the wafer loading portion, and the resin is used to embed a portion of the plurality of wafer loading portions and the signal connecting portion formed on the metal frame and formed into a plate shape. A base for an optical semiconductor device having improved strength and reduced warpage can be manufactured.

Further, a cutting step for dividing the optical semiconductor device base into smaller individual cells may be provided.

In the method for manufacturing a substrate for an optical semiconductor device according to the present invention, the surface of one side of the semiconductor wafer on which the electrode portion of the plurality of signal connection portions and the exposed portion of the plurality of wafer loading portions are loaded can be mounted on the side of the semiconductor wafer On, resin molding is performed. At this time, the exposed portion can be clamped by a mold, and the molding material is filled and molded by a transfer molding method.

In this way, a resin molded portion such as a reflector or a lens can be formed on the surface of the base for an optical semiconductor device, and a high-performance optical semiconductor device base can be manufactured with improved durability.

In order to improve the adhesion of the resin molded portion to the surface of the optical semiconductor device base, it is preferable to apply Ar plasma treatment or UV ozone treatment to the surface of the optical semiconductor device base before the resin molding.

Further, when the resin is embedded and the optical semiconductor device substrate is formed into a plate shape, it is preferable to make the thickness of the portion of each of the optical semiconductor device bases in which the signal connection portions are formed, compared to the thickness of each wafer loading portion. Thicker, for example, a thicker number of 10 μm to embed the resin.

When a resin molded portion such as a reflector or a lens is formed on the surface of the optical semiconductor device base, it is possible to suppress the occurrence of resin burrs on the surface of each signal connecting portion due to an increase in pressure when clamping by a mold. The situation.

Next, an optical semiconductor device of the present invention will be described.

In the optical semiconductor device of the present invention, each of the semiconductor wafers is mounted on a plurality of wafer mounting portions of the optical semiconductor device substrate manufactured by the above-described manufacturing method of the present invention, and is divided by dicing.

Fig. 7 (A) and (B) are views showing an example of the optical semiconductor device of the present invention. As shown in Fig. 7 (A) and (B), the optical semiconductor device 10 of the present invention has a semiconductor wafer 11 mounted on a metal wafer mounting portion and is made of, for example, gold bumps, Au-Sn, solder. The adhesion promoting material like the die bonding material adheres to the wafer loading portion. The semiconductor wafer 11 and the two signal connecting portions 3 are electrically connected via the bonding wires 12. As shown in FIG. 7(B), a sealing portion 13 is formed on one side on which the semiconductor wafer 11 is mounted, and the signal connecting portion 3 is exposed on the lower surface side of the optical semiconductor device 10 to form an electrode portion. For the sealing portion, for example, polyoxyalkylene can be used, and Add added substances.

The inside of the wafer loading portion 2 of the metal wafer 11 on which the semiconductor wafer 11 is mounted is exposed, and the heat generated by the semiconductor wafer 11 can be efficiently released from the exposed surface of the wafer loading portion 2 to the outside. Further, the signal connecting portion 3 has a portion which is thinner than the thickness of the wafer loading portion 2, and is embedded in a portion where the wafer loading portion 2 and the signal connecting portion 3 are removed by resin and formed into a plate shape. This improves mechanical strength and heat resistance and reduces warpage.

As described above, the optical semiconductor device of the present invention is an optical semiconductor device having stable mechanical characteristics and high durability and high heat dissipation.

Fig. 8 is a view showing another example of the optical semiconductor device of the present invention. As shown in Fig. 8, the sealing portion 13 is formed in a lens shape. Further, the reflector 14 is formed to surround the semiconductor wafer 11. The reflector 14 is preferably a polyoxyalkylene composition containing an additive substance such as titanium oxide or the like which is reflective with respect to light emitted or emitted from the semiconductor wafer 11. By using the polyoxyalkylene composition, high durability can be achieved, and the light emitted from the semiconductor wafer 11 can be distributed for a long time.

Fig. 9 is a view showing another example of the optical semiconductor device of the present invention. As shown in Fig. 9, the optical semiconductor device is not electrically connected to the semiconductor wafer via the bonding wires as described above, but is a flip chip method in which the signal connection portion 3 is directly electrically connected. A notch is formed in the central portion of the wafer loading unit 2, and resin is embedded in the notch portion to form the resin matrix portion 5. At this time, the heat generated by the flip chip can be efficiently released from the exposed surface of the wafer loading portion 2.

For the sealing portion 13, for example, a glass material can also be used. In addition, as shown in Figure 9 As shown, a space may be provided between the semiconductor wafer and the sealing portion, and the space may be filled with a gas such as air, argon or nitrogen.

The base for an optical semiconductor device of the present invention and the optical semiconductor device manufactured thereby can be used in various fields, for example, a backlight which can be preferably used in a large-area display or a display device like a television device for projection For the purpose of lighting devices, or in general lighting, floodlighting or spotlights.

[Examples]

Hereinafter, the present invention will be more specifically described by showing examples and comparative examples of the invention, but the invention is not limited thereto.

(Example)

The base for an optical semiconductor device of the present invention as shown in Fig. 1 is produced in accordance with the method for producing a substrate for an optical semiconductor device according to the present invention.

A metal alloy containing Fe (TAMAC 194, manufactured by Mitsubishi Shindo Co., Ltd.) was used for the metal frame, and a polyoxyalkylene resin containing titanium oxide as an additive was used as the resin mother portion. The resin matrix portion contains glass fibers as a fiber reinforcing material.

First, a metal plate of TAMAC 194 having a thickness of 0.5 mm was cut into an A4 size, and a metal frame as shown in Fig. 5 was prepared by etching. At this time, the wafer mounting portion was not etched, and the lower side of the portion to be the signal connecting portion was half-etched by 0.3 mm to have a thickness of 0.2 mm. At this time, the amount of etching was measured using a laser microscope.

Next, in order to embed the resin in the metal frame, a prepreg sheet was produced. A glass fiber having a thickness of about 70 μm was immersed in a solvent in which an additive of a polyoxyalkylene resin and a titanium oxide was dissolved, and then the excess solvent was removed to form a sheet. Further, a prepreg sheet containing no glass fibers was produced using a fluorine-based film (PTFE resin film).

These prepreg sheets produced were placed in a furnace at 100 ° C to sufficiently evaporate and dry the solvent.

Then, the prepreg sheet produced by cutting is formed in accordance with the shape of the metal frame, and is fitted to the through portion of the metal frame formed by etching or the concave portion attached to the lower surface side of the signal connecting portion. At this time, three sheets of prepreg containing glass fibers were laminated, and a prepreg sheet containing no glass fibers was laminated thereon. Here, when laminating three sheets of prepreg sheets containing glass fibers, the glass fiber layer of the prepreg sheet in the middle is placed at an angle of 90° to the glass fiber layer of the prepreg sheet of the upper and lower layers. Way to laminate.

Then, the prepreg sheet and the metal frame were thermocompression-bonded at 180 ° C, 10 MPa, and 120 hours, and cooled to be hardened. At this time, the thickness of the portion where the signal connecting portion is formed is formed to be 0.001 mm thicker than the thickness of the wafer loading portion. Thereafter, the resist was applied to the surface of the substrate by a screen printing method, and cut into a square shape of 100 mm. Further, the reflector is formed on the surface of the base for an optical semiconductor device by a transfer molding method, but since the thickness of the portion where the signal connection portion is formed is formed thicker than the thickness of the wafer loading portion, the signal connection portion can be prevented. The resin burrs on the surface.

The heat of the wafer loading portion of the substrate for optical semiconductor device thus fabricated in the thickness direction of the substrate is measured by the method according to JIS A 1412-2. Conductivity is evaluated.

The result is shown in the first table. As shown in the first table, the thermal conductivity is higher than the result of the comparative example described later, and the heat generated by the semiconductor wafer can be efficiently released. Further, it is known that the thermal conductivity is equivalent to that of the copper plate used for reference. This is because the thermal conductivity of the material used in the metal frame (TAMAC194) is similar to the thermal conductivity of copper.

Further, the reflectance of the wafer loading portion of the substrate for an optical semiconductor device manufactured in the examples was measured and evaluated by the method according to JIS Z 8722. The evaluation was carried out by comparing the initial reflectance with the reflectance measured after the test in a high temperature and high humidity environment. Here, the high-temperature and high-humidity environment test was carried out by holding the abutment at 85 ° C and 85% for 1000 hours.

The result is shown in the second table. As shown in the second table, the initial reflectance is a high value, and there is almost no difference between the initial reflectance and the reflectance after the test, and the high reflectance can be maintained. On the other hand, in the comparative examples described later, the initial reflectance of the AlN substrate and the reflectance after the test were both low, and the initial reflectance of the FR-4 (glass fiber substrate impregnated with the epoxy resin) was high, but the reflectance after the test. significantly reduce.

Next, the initial value of the beam value and the value after the test in the high-temperature and high-humidity environment under the same conditions as above were measured and evaluated by the method according to JIS C 8152. However, it is evaluated that the test time in a high-temperature and high-humidity environment is set to 100 hours, 500 hours, and 1000 hours, respectively. Here, the beam value is displayed with an initial beam value of 100% in the embodiment.

The result is shown in Table 3. As shown in Table 3, high temperature and high humidity environment The amount of decrease in the beam value after the test was extremely small from the initial beam value, and it was found that the beam value equal to or higher than that of the ceramic AlN substrate of the comparative example described later can be maintained.

As described above, the substrate for an optical semiconductor device manufactured by the production method of the present invention has excellent heat dissipation properties and high temperature durability, and the optical semiconductor device manufactured by the method can suppress reflectance or can be used even in a high-temperature and high-humidity environment. The reduction in beam value.

(Comparative example)

A general AlN (aluminum nitride) substrate and an FR-4 substrate (a substrate in which an epoxy resin is infiltrated into a glass fiber cloth and thermally hardened) without a composite abutment structure of the metal frame and the resin of the present invention is produced. The thermal conductivity, the reflectance, and the beam value were evaluated in the same manner as in the examples.

The results of the thermal conductivity are shown in Table 1. As shown in Table 1, the thermal conductivity was lower than that of the examples, and it was found that the release efficiency of the heat released by the semiconductor wafer was deteriorated.

The results of the reflectance are shown in Table 2. As shown in the second table, in the AlN substrate, both the initial reflectance value and the reflectance after the test were deteriorated, and in the FR-4 substrate, although the initial reflectance value was the same as that of the example, it was drastically lowered after the test.

The results of the beam values are shown in Table 3. As shown in the third table, in the examples, the beam value equal to or higher than that of the ceramic AlN substrate can be maintained. In the FR-4 substrate, the beam value deteriorates greatly with the passage of time.

The present invention is not limited to the above embodiment. The above-described embodiments are merely illustrative, and are included in the technical scope of the present invention as long as they have substantially the same configuration as the technical idea described in the patent application scope of the present invention and can achieve the same effects.

1‧‧‧Abutment for optical semiconductor devices

2‧‧‧ wafer loading department

3‧‧‧Signal Connection

4‧‧‧Metal frame

5‧‧‧ resin mother body

6‧‧‧Fiber strengthening materials

7‧‧‧Resin molding department

8‧‧‧Connecting Department

10‧‧‧Optical semiconductor device

11‧‧‧Semiconductor wafer

12‧‧‧ Bonding wire

13‧‧‧ Sealing Department

14‧‧‧Reflect

Fig. 1 is a view showing an example of a base for an optical semiconductor device of the present invention.

Fig. 2 is an enlarged view of a portion surrounded by a broken line in Fig. 1. Fig. 2(A) is an enlarged view of the upper side. Figure 2 (B) is a cross-sectional view.

Fig. 3 is a cross-sectional view showing a part of another example of the base for an optical semiconductor device of the present invention.

Fig. 4 is an explanatory view for explaining a surface pattern of a base for an optical semiconductor device of the present invention.

Fig. 5 is a top view showing a metal frame of a base for an optical semiconductor device of the present invention.

Fig. 6 is a flow chart showing an example of a step of embedding a resin in a metal frame in the method for manufacturing a substrate for an optical semiconductor device according to the present invention.

Fig. 7 is a view showing an example of an optical semiconductor device of the present invention.

Fig. 8 is a view showing another example of the optical semiconductor device of the present invention.

Fig. 9 is a view showing another example of the optical semiconductor device of the present invention.

1‧‧‧Abutment for optical semiconductor devices

2‧‧‧ wafer loading department

3‧‧‧Signal Connection

4‧‧‧Metal frame

5‧‧‧ resin mother body

Claims (27)

A method for manufacturing a substrate for an optical semiconductor device, comprising: a plurality of wafer loading portions for loading a semiconductor wafer; and a plurality of signal connection portions electrically connected to the semiconductor wafer to be mounted and externally providing electrode portions A method of manufacturing a substrate for an optical semiconductor device, comprising: forming a metal frame in which the plurality of wafer mounting portions and the signal connecting portion having a thickness smaller than a thickness of the plurality of wafer mounting portions are formed a step of embedding the plurality of wafers formed on the metal frame by resin by exposing the front surface of the plurality of wafer loading portions and exposing at least one side of the signal connecting portion The step of forming the aforementioned substrate for an optical semiconductor device by forming a portion of the mounting portion and the signal connecting portion into a plate shape. A method of manufacturing a substrate for an optical semiconductor device according to claim 1, wherein in the step of preparing the metal frame, the plurality of wafer mounting portions and the signal connecting portion are formed by etching a metal plate. The method for manufacturing a substrate for an optical semiconductor device according to the first aspect of the invention, further comprising: the base unit for optical semiconductor device in which an electrode portion of the plurality of signal connection portions and an exposed portion of the plurality of wafer mounting portions are subtracted The step of resin molding is performed on the surface on one side of the semiconductor wafer. The method for manufacturing a base for an optical semiconductor device according to the second aspect of the invention, comprising: subtracting the plurality of signal connecting portions The electrode portion is subjected to a resin molding step on a surface on the side of the semiconductor wafer on which the electrode portion and the exposed portion of the plurality of wafer mounting portions are mounted. The method for producing a substrate for an optical semiconductor device according to any one of claims 1 to 4, wherein in the step of embedding the resin and forming the substrate for the optical semiconductor device into a plate shape, The resin is embedded so that the thickness of the portion of each of the optical semiconductor device bases in which the respective signal connecting portions are formed is thicker than the thickness of each of the wafer mounting portions. The method for producing a substrate for an optical semiconductor device according to any one of claims 1 to 4, wherein in the step of embedding the resin and forming the substrate for the optical semiconductor device into a plate shape, The aforementioned resin is embedded by thermocompression bonding, printing coating, or mold molding. The method for producing a substrate for an optical semiconductor device according to claim 5, wherein in the step of embedding the resin and forming the substrate for the optical semiconductor device into a plate shape, by thermocompression bonding, Printing or coating or molding to embed the aforementioned resin. The method for producing an optical semiconductor device base according to any one of claims 1 to 4, wherein a thermosetting resin or a thermoplastic resin is used as the material of the embedded resin. The method for producing a substrate for an optical semiconductor device according to claim 5, wherein the material of the embedded resin is a thermosetting resin or a thermoplastic resin. Abutment for optical semiconductor devices as claimed in claim 6 In the manufacturing method, the material of the embedded resin is made of a thermosetting resin or a thermoplastic resin. The method for producing a substrate for an optical semiconductor device according to the seventh aspect of the invention, wherein the material of the embedded resin is a thermosetting resin or a thermoplastic resin. The method for producing a substrate for an optical semiconductor device according to any one of claims 1 to 4, wherein the embedded resin contains a fiber-reinforced material. The method for producing a substrate for an optical semiconductor device according to claim 11, wherein the embedded resin contains a fiber-reinforced material. A method for producing a base for an optical semiconductor device according to claim 12, wherein a glass fiber is used as the fiber-reinforced material contained in the embedded resin. The method for producing a base for an optical semiconductor device according to claim 13, wherein a glass fiber is used as the fiber-reinforced material contained in the embedded resin. The method for producing a substrate for an optical semiconductor device according to any one of claims 1 to 4, wherein the step of manufacturing the abutment for the optical semiconductor device is carried out by embedding the resin in a plate shape. In the subsequent step, the surface of the substrate is subjected to a surface treatment of polishing and/or resist coating. The method for producing a base for an optical semiconductor device according to any one of the preceding claims, wherein the resin is embedded and shaped by the resin In the subsequent step of the step of forming the substrate for the optical semiconductor device in a plate shape, the surface of the base is subjected to surface treatment by polishing and/or resist coating. A substrate for an optical semiconductor device, which is a plurality of wafer loading portions for loading a semiconductor wafer, and an optical semiconductor device electrically connected to the mounted semiconductor wafer and externally providing a plurality of signal connecting portions of the electrode portions The manufacturing method of the base is characterized in that: the plurality of wafer loading portions and the metal frame having the signal connecting portion having a thickness smaller than a thickness of the plurality of wafer loading portions are formed, and Forming at least one surface of the plurality of wafer loading portions and exposing at least one side of the signal connecting portion, and embedding the portion of the plurality of wafer loading portions and signal connecting portions formed on the metal frame The resin matrix portion is formed; and is formed into a plate shape. The substrate for an optical semiconductor device according to claim 18, wherein the semiconductor wafer is loaded on the substrate for the optical semiconductor device in which the electrode portion of the plurality of signal connection portions and the exposed portion of the plurality of wafer loading portions are subtracted On one of the sides, there is a resin molded portion. The substrate for an optical semiconductor device according to claim 18, wherein a thickness of a portion of each of the optical semiconductor device bases on which the signal connection portions are formed is thicker than a thickness of each of the wafer loading portions. The resin matrix portion is embedded. The base for an optical semiconductor device according to claim 19, wherein the substrate for the optical semiconductor device is formed with each of the foregoing The thickness of the portion of the signal connecting portion is thicker than the thickness of each of the wafer loading portions, and the resin matrix portion is buried. The base for an optical semiconductor device according to any one of claims 18 to 21, wherein the resin matrix portion is made of a thermosetting resin or a thermoplastic resin. The base for an optical semiconductor device according to any one of claims 18 to 21, wherein the resin matrix portion contains a fiber-reinforced material. The base for an optical semiconductor device according to claim 22, wherein the resin matrix portion contains a fiber-reinforced material. The base for an optical semiconductor device according to claim 24, wherein the fiber-reinforced material contained in the resin matrix portion is glass fiber. An optical semiconductor device characterized in that each of the semiconductor wafers is mounted on the plurality of wafer loading portions of the optical semiconductor device base according to any one of claims 18 to 21, and is divided by cutting. . An optical semiconductor device characterized in that each of the semiconductor wafers is mounted on the plurality of wafer mounting portions of the optical semiconductor device base according to claim 25 of the patent application, and is divided by cutting.