TWI458134B - Packaged leds with phosphor films, and associated systems and methods - Google Patents
Packaged leds with phosphor films, and associated systems and methods Download PDFInfo
- Publication number
- TWI458134B TWI458134B TW100121668A TW100121668A TWI458134B TW I458134 B TWI458134 B TW I458134B TW 100121668 A TW100121668 A TW 100121668A TW 100121668 A TW100121668 A TW 100121668A TW I458134 B TWI458134 B TW I458134B
- Authority
- TW
- Taiwan
- Prior art keywords
- led
- phosphor
- phosphor film
- carrier
- film
- Prior art date
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 158
- 238000000034 method Methods 0.000 title claims description 51
- 239000011159 matrix material Substances 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 9
- 230000005855 radiation Effects 0.000 claims description 6
- 239000004593 Epoxy Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 claims 27
- 102000001708 Protein Isoforms Human genes 0.000 claims 2
- 108010029485 Protein Isoforms Proteins 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 1
- 239000003822 epoxy resin Substances 0.000 claims 1
- 229920000647 polyepoxide Polymers 0.000 claims 1
- 230000036961 partial effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48111—Disposition the wire connector extending above another semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Description
本發明概言之係關於具有磷光膜之封裝發光二極體(LED)、及相關之系統及方法。SUMMARY OF THE INVENTION The present invention relates to packaged light emitting diodes (LEDs) having phosphorescent films, and related systems and methods.
由於LED有效產生高強度、高品質光,故出於許多目的對該等裝置之需要不斷增加。舉例而言,行動電話、個人數位助理、數位相機、MP3播放器及其他可攜式裝置使用LED或其他固態發光裝置產生白光用於背景照明。LED亦可用於除電子裝置外之應用中,例如用於天花板面板、桌燈、冰箱燈、臺燈、路燈、自動前照燈、及需要或期望發光之其他情形中。Since LEDs effectively produce high intensity, high quality light, the need for such devices is increasing for many purposes. For example, mobile phones, personal digital assistants, digital cameras, MP3 players, and other portable devices use LEDs or other solid state lighting devices to produce white light for background illumination. LEDs can also be used in applications other than electronic devices, such as ceiling panels, table lamps, refrigerator lights, table lamps, street lamps, automatic headlamps, and other situations where illumination is desired or desired.
與生產LED相關之一個挑戰係控制生產成本以使LED之定價與其他更習用之發光源相比具有競爭力。由於LED之成本大部分歸因於製備LED之方法,故製造商已嘗試降低處理成本。處理成本之一個態樣係關於磷光體在封裝LED系統中之使用。具體而言,典型LED發射藍光,而許多應用需要或至少受益於較柔和之有色光或白光。因此,製造商用吸收一部分所發射藍光並重新發射黃光形式之光的磷光體塗佈該等LED,從而產生白色或至少大約白色之複合光發射。One of the challenges associated with producing LEDs is to control production costs to make LED pricing competitive with other more conventional sources of illumination. Since the cost of LEDs is largely due to the method of making LEDs, manufacturers have tried to reduce processing costs. One aspect of processing cost relates to the use of phosphors in packaged LED systems. In particular, typical LEDs emit blue light, and many applications require or at least benefit from softer colored or white light. Thus, the manufacturer coats the LEDs by absorbing a portion of the emitted blue light and re-emitting the light in the form of yellow light to produce a white or at least approximately white composite light emission.
用於在LED之發射光途徑中提供磷光體區域的現有方法可顯著增加LED之成本。一種該方法包括將LED置於支撐基板之腔或凹槽中,且隨後用磷光體填充該腔。另一方法包括將LED置於平坦基板上且隨後在LED周圍構建壩並用磷光體填充內部區域。又一方法包括將磷光體層直接沈積於LED晶粒上且隨後去除磷光體之部分以暴露下伏焊墊,由此與晶粒電連接。儘管上述方法已獲得可產生適宜光發射特性之LED,但其均會增加LED之成本。因此,工業中仍需要改良之低成本處理技術。Existing methods for providing a phosphor region in the emission path of an LED can significantly increase the cost of the LED. One method includes placing an LED in a cavity or recess in a support substrate and subsequently filling the cavity with a phosphor. Another method involves placing the LED on a flat substrate and then constructing a dam around the LED and filling the interior region with a phosphor. Yet another method includes depositing a phosphor layer directly onto the LED die and subsequently removing portions of the phosphor to expose the underlying pad, thereby electrically connecting to the die. Although the above methods have obtained LEDs that produce suitable light emission characteristics, they all increase the cost of the LEDs. Therefore, there is still a need for improved low cost processing techniques in the industry.
本發明之態樣概言之係關於具有磷光膜之封裝發光二極體(LED)、及相關之系統及方法。下文參照特定LED闡述本發明之若干實施例的具體細節以便達成對該等實施例之透徹瞭解。在其他實施例中,本發明之態樣可與具有其他組態之LED結合使用。為清晰起見,以下說明中並未闡釋用以闡述眾所周知且經常與LED相關、但可不必要地淡化本發明之一些顯著態樣的若干細節。此外,儘管以下解釋內容闡釋本發明不同態樣之若干實施例,但若干其他實施例可具有與此部分中所述之彼等不同之組態、不同之組份及/或不同之方法或步驟。因此,本發明可具有其他實施例,該等實施例具有額外要素、及/或無下文參照圖1至5闡述之若干要素。Aspects of the invention relate to packaged light emitting diodes (LEDs) having phosphorescent films, and related systems and methods. Specific details of several embodiments of the invention are set forth in the <RTIgt; In other embodiments, aspects of the invention may be used in conjunction with LEDs having other configurations. For the sake of clarity, the following description does not illustrate some of the details that are well known and often associated with LEDs, but which may unnecessarily dilute some of the salient aspects of the present invention. In addition, although the following explanation sets forth several embodiments of various aspects of the invention, several other embodiments may have different configurations, different components, and/or different methods or steps than those described in this section. . Accordingly, the present invention is capable of other embodiments, and the embodiments may have additional elements and/
圖1係LED系統100之局部示意性剖視側面圖,該系統包括經組合形成本發明實施例的封裝101之組件。該等組件可包括攜載LED 130之支撐部件140、及視情況由載體120支撐之磷光膜110。磷光膜110具有等形性且在利用焊線104將LED 130後連接至支撐部件140後其附接至LED 130及支撐部件140。下文闡述此佈置及相關方法之其他細節。1 is a partial schematic cross-sectional side view of an LED system 100 including components that are assembled to form a package 101 of an embodiment of the present invention. The components may include a support member 140 carrying the LED 130, and a phosphor film 110 supported by the carrier 120 as appropriate. The phosphor film 110 has an isomorphism and is attached to the LED 130 and the support member 140 after the LED 130 is subsequently attached to the support member 140 by the bonding wire 104. Further details of this arrangement and related methods are set forth below.
在圖1中所示之特定實施例中,支撐部件140係自陶瓷或另一適宜基材材料形成且具有第一(例如,面朝上)表面143a及第二(例如,面朝下)表面143b。每一支撐部件140進一步包括為LED 130及/或自其提供電連通的第一及第二支撐部件結合位點141a、141b(例如焊墊)。因此,支撐部件結合位點141a、141b中之每一者藉由相應通孔142或另一導電結構連接至相應封裝結合位點102a、102b。第一及第二封裝結合位點102a、102b可自封裝101之外側接近以有利於在封裝101與外部裝置(圖1中未顯示)之間進行物理及電連接。In the particular embodiment illustrated in Figure 1, the support member 140 is formed from a ceramic or another suitable substrate material and has a first (e.g., face up) surface 143a and a second (e.g., face down) surface. 143b. Each support member 140 further includes first and second support member bonding sites 141a, 141b (e.g., pads) that are in electrical communication with and/or from the LEDs 130. Thus, each of the support member bonding sites 141a, 141b is coupled to the respective package bonding sites 102a, 102b by respective vias 142 or another conductive structure. The first and second package bonding sites 102a, 102b can be accessed from the outside of the package 101 to facilitate physical and electrical connection between the package 101 and an external device (not shown in Figure 1).
支撐部件140在(例如)支撐部件表面143a處攜載LED 130。LED 130可包括第一LED結合位點131a及第二LED結合位點131b。第二LED結合位點131b可面朝第二支撐部件結合位點141b且與其直接電連接。在另一實施例中,第二LED結合位點131b可背離第二支撐部件結合位點141b,且可利用焊線連接至第二支撐部件結合位點141b。在任一實施例中,第一LED結合位點131a可利用焊線104電連接至第一支撐部件結合位點141a。在圖1中所示之實施例的特定態樣中,封裝101亦可包括靜電放電(ESD)晶粒103,其為LED 130提供保護且亦利用焊線104電連接至第一支撐部件結合位點141a,並以適宜背側表面對表面連接電連接至第二支撐部件結合位點141b。在其他實施例中,可忽略ESD晶粒103。The support member 140 carries the LED 130 at, for example, the support member surface 143a. The LED 130 can include a first LED bonding site 131a and a second LED bonding site 131b. The second LED bonding site 131b can face and be directly electrically connected to the second support member bonding site 141b. In another embodiment, the second LED bonding site 131b can face away from the second support member bonding site 141b and can be connected to the second support member bonding site 141b using a bonding wire. In either embodiment, the first LED bonding site 131a can be electrically coupled to the first support member bonding site 141a using bond wires 104. In a particular aspect of the embodiment shown in FIG. 1, package 101 may also include an electrostatic discharge (ESD) die 103 that provides protection for LED 130 and is also electrically connected to the first support component bond by wire bond 104. Point 141a is electrically connected to the second support member bonding site 141b with a suitable backside surface to surface connection. In other embodiments, the ESD die 103 can be ignored.
在圖1中所示之實施例中,LED 130具有面朝上之作用表面132,透過其發射光(例如藍光)。磷光膜110定位於作用表面132上以改變方向遠離封裝101之光的特性。因此,磷光膜110可包括具有磷光體成份112之分佈的基質材料111。磷光體成份112接收LED 130之光且發射不同波長之光以(例如)產生白色而非藍色之複合發射光。In the embodiment shown in FIG. 1, LED 130 has an upwardly facing active surface 132 through which light (e.g., blue light) is emitted. The phosphor film 110 is positioned on the active surface 132 to change the characteristics of the light away from the package 101. Accordingly, the phosphor film 110 can include a matrix material 111 having a distribution of phosphor components 112. Phosphor component 112 receives the light of LED 130 and emits light of a different wavelength to, for example, produce a composite emission of white rather than blue.
在一特定實施例中,磷光膜110係由自支撐、保留形狀但仍具有韌性或可等形之材料形成。舉例而言,磷光膜110之基質材料111可包括部分固化(例如b階段)之環氧樹脂材料,其在呈膜形式時具有足夠處理強度,但其在加熱時可與LED及相關特徵等形。在處理期間,如箭頭C所示使磷光膜110與LED 130及支撐部件140接觸,且加熱以形成下文參照圖2闡述之組裝單元。基質材料111可因加熱而軟化,從而使磷光膜110與LED 130及連接LED 130與支撐部件140之焊線104等形。在一特定實施例中,基質材料111於升高溫度下足夠順從以在焊線104周圍等形、流動或以其他方式變形,而不會代替、扭曲、干擾或以其他方式改變焊線104之位置及/或形狀。因此,可在添加磷光膜110之前將LED 130用焊線連接至支撐部件140,且磷光膜110不會干擾焊線104之完整性。In a particular embodiment, the phosphor film 110 is formed from a self-supporting, retained shape material that is still tough or otherwise conformable. For example, the matrix material 111 of the phosphor film 110 may comprise a partially cured (eg, b-stage) epoxy material that has sufficient processing strength when in film form, but which can be shaped with LEDs and related features when heated . During processing, the phosphor film 110 is brought into contact with the LED 130 and the support member 140 as indicated by arrow C and heated to form an assembly unit as explained below with reference to FIG. The matrix material 111 can be softened by heating to shape the phosphor film 110 and the LEDs 130 and the bonding wires 104 connecting the LEDs 130 to the support member 140. In a particular embodiment, the matrix material 111 is sufficiently compliant at elevated temperatures to conform, flow, or otherwise deform around the bond wire 104 without replacing, distorting, interfering with, or otherwise altering the bond wire 104. Location and / or shape. Therefore, the LED 130 can be connected to the support member 140 with a bonding wire before the addition of the phosphor film 110, and the phosphor film 110 does not interfere with the integrity of the bonding wire 104.
基質材料111亦選擇為對由LED 130及膜110發射之輻射至少部分(在特定實施例中,完全)透明。舉例而言,在LED發射藍光且磷光體成份112發射黃光之情形下,基質材料111選擇為對兩種波長大體上透明。在某些實施例中,膜110可包括多個磷光體成份112,不同磷光體成份經選擇以發射相應不同波長之光。在其他實施例中,封裝101可包括多個膜層110,其各自具有磷光體元件112以發射相應不同波長之光。在該等實施例中之任一者中,基質材料111可選擇為對一或多種(例如,所有)發射波長至少部分(且在特定實施例中,完全)透明。The matrix material 111 is also selected to be at least partially (in a particular embodiment, completely) transparent to the radiation emitted by the LEDs 130 and 110. For example, where the LED emits blue light and the phosphor component 112 emits yellow light, the host material 111 is selected to be substantially transparent to both wavelengths. In some embodiments, film 110 can include a plurality of phosphor components 112 that are selected to emit light of corresponding different wavelengths. In other embodiments, the package 101 can include a plurality of film layers 110 each having a phosphor element 112 to emit light of a respective different wavelength. In any of these embodiments, the matrix material 111 can be selected to be at least partially (and in a particular embodiment, completely) transparent to one or more (eg, all) emission wavelengths.
在一特定實施例中,磷光膜110作為獨立式單元強到足以耐受常規微電子裝置處理技術。在其他實施例中,磷光膜110可附接至載體120,其可為剛性或半剛性以便在製程期間為磷光膜提供額外支撐。因此,磷光膜110可包括面朝LED 130及支撐部件140之第一表面113a、及與第一表面113a相反面對且附接至載體120之第二表面113b。載體120通常比磷光膜110更硬及/或剛性更強以提供額外支撐。在一特定實施例中,載體120可包括大體上平坦、大體上剛性且大體上透明的材料,其為磷光膜110提供支撐,而不會影響遠離LED 130之光的透射。舉例而言,載體120可包括對輻射(例如,光,且在特定實施例中,可見光)透明之玻璃的平坦層。在其他實施例中,載體120可包括不會影響由LED 130發射之光的特徵。舉例而言,載體120可包括重定向自LED 130發射之光的透鏡部分121。在另一實施例中,載體120可包括除磷光膜110中存在之彼等磷光體成份外的其他磷光體成份112。若載體120包括磷光體成份,則磷光體成份在載體120中之濃度通常小於磷光體成份112在磷光膜110中之濃度。載體120可固定附接至膜110,且可形成封裝101之永久部分。在其他實施例中,在膜110附接至LED 130及支撐部件140後,或體可自膜110釋放。In a particular embodiment, phosphor film 110 is strong enough as a stand-alone unit to withstand conventional microelectronic device processing techniques. In other embodiments, the phosphor film 110 can be attached to the carrier 120, which can be rigid or semi-rigid to provide additional support for the phosphor film during the process. Accordingly, the phosphor film 110 may include a first surface 113a facing the LED 130 and the support member 140, and a second surface 113b opposite to the first surface 113a and attached to the carrier 120. Carrier 120 is generally stiffer and/or stiffer than phosphor film 110 to provide additional support. In a particular embodiment, the carrier 120 can comprise a substantially planar, substantially rigid, and substantially transparent material that provides support for the phosphor film 110 without affecting the transmission of light away from the LEDs 130. For example, carrier 120 can include a planar layer of glass that is transparent to radiation (eg, light, and in particular embodiments, visible light). In other embodiments, the carrier 120 can include features that do not affect the light emitted by the LEDs 130. For example, carrier 120 can include a lens portion 121 that redirects light emitted from LED 130. In another embodiment, the carrier 120 can include other phosphor components 112 in addition to the phosphor components present in the phosphor film 110. If the carrier 120 comprises a phosphor component, the concentration of the phosphor component in the carrier 120 is generally less than the concentration of the phosphor component 112 in the phosphor film 110. The carrier 120 can be fixedly attached to the film 110 and can form a permanent portion of the package 101. In other embodiments, the body may be released from the film 110 after the film 110 is attached to the LED 130 and the support member 140.
圖2繪示磷光膜110與LED 130及基板140接觸後之封裝101。在製程期間,對封裝101之元件施加熱105,使得磷光膜110軟化並與焊線104、LED 130、ESD晶粒103(若存在)、及/或可自基板140之第一表面143a凸起或自其凹陷的其他特徵等形。因此,磷光膜110可在第一LED結合位點131a、第一支撐部件結合位點141a處、及/或兩個結合位點131a、141a之間之焊線104的位置處完全包圍、囊封及/或以其他方式容納焊線104。隨後可以圖2中所示形狀及位置完全固化整個封裝101以硬化磷光膜110,磷光膜110黏附至LED 130及基板140。2 illustrates the package 101 after the phosphor film 110 is in contact with the LED 130 and the substrate 140. During processing, heat 105 is applied to the components of package 101 such that phosphor film 110 softens and embosses with bond wires 104, LEDs 130, ESD die 103 (if present), and/or can be lifted from first surface 143a of substrate 140. Or other features that are recessed from it. Therefore, the phosphor film 110 can be completely surrounded and encapsulated at the position of the bonding wire 104 between the first LED bonding site 131a, the first supporting member bonding site 141a, and/or the two bonding sites 131a, 141a. And/or otherwise accommodate the bond wires 104. The entire package 101 can then be fully cured in the shape and position shown in FIG. 2 to harden the phosphor film 110, and the phosphor film 110 is adhered to the LED 130 and the substrate 140.
圖3A係繪示根據本發明實施例形成磷光膜110之方法300a的示意性方塊圖。在本實施例之一個態樣中,將基質材料111(例如,軟化、液體或可以其他方式流動或延展之環氧樹脂或其他材料)與磷光體成份112合併形成混合物114。磷光體成份112可均勻分佈於基質材料111中。其後,該混合物114可經成形或以其他方式處理,以根據多種適宜技術中之任一者產生磷光膜110。該等技術可包括旋塗方法、橡皮輥方法、或產生具有均勻厚度之磷光膜110的另一方法。隨後可在將磷光膜110施加至LED之前對其進行部分固化,如上文參照圖1及2所述。FIG. 3A is a schematic block diagram of a method 300a of forming a phosphor film 110 in accordance with an embodiment of the present invention. In one aspect of this embodiment, a matrix material 111 (e.g., softened, liquid, or otherwise epoxy or other material that flows or extends) is combined with the phosphor component 112 to form a mixture 114. The phosphor component 112 can be uniformly distributed in the matrix material 111. Thereafter, the mixture 114 can be shaped or otherwise processed to produce the phosphor film 110 in accordance with any of a variety of suitable techniques. Such techniques may include a spin coating method, a squeegee method, or another method of producing a phosphor film 110 having a uniform thickness. The phosphor film 110 can then be partially cured prior to application to the LED, as described above with reference to Figures 1 and 2.
圖3B繪示根據多個其他實施例形成磷光膜310的另一方法300b。在該等實施例中,磷光體成份不需均勻分佈於基質材料中。舉例而言,該方法可包括使用上述形成膜之方法中的任一者自基質材料111形成基質膜層115a。因此,基質材料111可具有上述黏著及柔軟特性。隨後可使用磷光體沈積方法(示於方塊116中)將磷光體成份直接佈置於基質膜層115a上。在替代實施例中,磷光體成份自身亦可使用上述先前技術中之任一者形成為個別的磷光膜層115b。在此實施例中,隨後將磷光膜層115b附接至基質膜層115a。在上述實施例之任一者中,結果係具有磷光體成份之不均勻分佈的多層磷光膜310。FIG. 3B illustrates another method 300b of forming a phosphor film 310 in accordance with various other embodiments. In such embodiments, the phosphor component need not be uniformly distributed in the matrix material. For example, the method can include forming the matrix film layer 115a from the matrix material 111 using any of the methods of forming a film described above. Therefore, the matrix material 111 can have the above-described adhesive and soft properties. Phosphor composition can then be disposed directly onto the host film layer 115a using a phosphor deposition process (shown in block 116). In an alternate embodiment, the phosphor component itself may also be formed as an individual phosphor film layer 115b using any of the prior art described above. In this embodiment, the phosphor film layer 115b is subsequently attached to the matrix film layer 115a. In any of the above embodiments, the result is a multilayer phosphor film 310 having an uneven distribution of phosphor components.
圖4係具有使用(例如)上述技術中之任一者參照圖3B形成的多層磷光膜310之封裝401的局部示意性立面分解圖。多層磷光膜310可包括自基質材料形成之第一層115a、及自磷光體成份112形成之第二層115b。如上文所論述,磷光體成份112及/或磷光體成份112之套組可經選擇以發射一個或一個以上波長之輻射。磷光體成份112係集中在與LED 130直接毗鄰之區域中。如上文參照圖1所論述,多層磷光膜310可自支撐或未自支撐,且在任一實施例中,可包括載體420以提供額外支撐。在圖4中所示之實施例中,載體420不包括透鏡部分。在其他實施例中,載體420可包括(例如)與上文參照圖1闡述之透鏡部分121類似的透鏡部分。4 is a partial schematic elevational exploded view of a package 401 having a multilayer phosphor film 310 formed using, for example, any of the above techniques with reference to FIG. 3B. The multilayer phosphor film 310 can include a first layer 115a formed from a matrix material and a second layer 115b formed from the phosphor composition 112. As discussed above, the set of phosphor component 112 and/or phosphor component 112 can be selected to emit radiation of one or more wavelengths. Phosphor composition 112 is concentrated in the area directly adjacent to LED 130. As discussed above with respect to FIG. 1, the multi-layer phosphor film 310 can be self-supporting or not self-supporting, and in any embodiment, can include carrier 420 to provide additional support. In the embodiment shown in Figure 4, the carrier 420 does not include a lens portion. In other embodiments, carrier 420 can include, for example, a lens portion similar to lens portion 121 set forth above with respect to FIG.
圖5係根據本發明之若干實施例對LED施加磷光膜之不同技術的局部示意性圖解。在一特定實施例中,磷光膜510可直接在載體晶圓520上形成且可定尺寸以為多種LED提供覆蓋。在此實施例之一個態樣中,可一起切割載體晶圓520及膜510以形成膜元件516。隨後使用習用拾取並放置方法將個別膜元件516個別地佈置於相應基板140(其中之一者示於圖5中)上。在另一實施例中,晶圓載體520及膜510可在附接至相應LED後進行切割。舉例而言,晶圓載體520及相關膜510可直接附接至LED晶圓133,其具有在LED晶圓133自身中已線結合至預圖案化或其他方式形成之電線的LED。在膜510及載體晶圓520已附接至LED晶圓133後,可切割或單切整個總成以產生(例如)組態與圖2中所示類似之個別封裝。Figure 5 is a partial schematic illustration of different techniques for applying a phosphor film to an LED in accordance with several embodiments of the present invention. In a particular embodiment, phosphor film 510 can be formed directly on carrier wafer 520 and can be sized to provide coverage for a variety of LEDs. In one aspect of this embodiment, carrier wafer 520 and film 510 can be cut together to form film element 516. Individual film elements 516 are then individually arranged on respective substrates 140 (one of which is shown in Figure 5) using conventional pick and place methods. In another embodiment, wafer carrier 520 and film 510 can be cut after attachment to respective LEDs. For example, wafer carrier 520 and associated film 510 can be directly attached to LED wafer 133 having LEDs that have been wire bonded to pre-patterned or otherwise formed wires in LED wafer 133 itself. After film 510 and carrier wafer 520 have been attached to LED wafer 133, the entire assembly can be cut or singulated to produce, for example, an individual package similar to that shown in FIG.
在另一實施例中,可對經單切LED施加不同磷光膜(例如,具有磷光體成份之不同濃度、分佈及/或類型之磷光膜)以負責由LED產生之輸出(例如,發射光之顏色)的差別。舉例而言,個別LED由於相關製程之變化而通常具有稍微不同之發射光特性且因此「分頻率倉(binned)」以使具有類似光特性之LED組合在一起。不同頻率倉之LED可接收具有不同磷光體特性之磷光膜以差異地調節所得封裝之光輸出。使用此技術可封裝不同頻率倉之LED以便產生相同或幾乎相同之光輸出,及/或可封裝頻率倉內之LED以與頻率倉內之其他LED等形。此技術之優點在於其可減少或消除用於歸類LED的頻率倉的數量、及/或改良頻率倉內之LED的均勻性。In another embodiment, different phosphorescent films (eg, phosphorescent films having different concentrations, distributions, and/or types of phosphor components) can be applied to the single-cut LEDs to account for the output produced by the LEDs (eg, emitting light) The difference in color). For example, individual LEDs typically have slightly different emission characteristics due to changes in the associated process and are therefore "binned" to combine LEDs having similar optical characteristics. LEDs of different frequency bins can receive phosphor films with different phosphor characteristics to differentially adjust the light output of the resulting package. Using this technique, LEDs of different frequency bins can be packaged to produce the same or nearly identical light output, and/or LEDs within the frequency bin can be packaged to be shaped with other LEDs within the frequency bin. An advantage of this technique is that it can reduce or eliminate the number of frequency bins used to classify LEDs, and/or improve the uniformity of LEDs within the frequency bin.
上文參照圖1至5闡述之至少一些實施例的一個特徵在於其可包括預形成之含磷光體之膜,在已將LED線結合至適宜支撐結構後,該含磷光膜置於相應LED(在晶圓位準或個別晶粒位準下)上。由於磷光體成份係由膜攜載,故其不需直接沈積於呈液態或其他形式之LED上。因此,支撐部件不需包括腔、凹槽、壩、或含有及/或限制磷光體成份之另一圍阻特徵。另外,期望在至少一些實施例中,磷光體成份在施加至LED時其分佈會比利用習用技術獲得之分佈更均勻。One feature of at least some embodiments set forth above with reference to Figures 1 through 5 is that it can include a preformed phosphor-containing film that is placed in a corresponding LED after the LED wire has been bonded to a suitable support structure ( Above the wafer level or individual grain level). Since the phosphor component is carried by the film, it does not need to be deposited directly on the liquid or other form of LED. Thus, the support member need not include a cavity, a groove, a dam, or another containment feature that contains and/or limits the composition of the phosphor. Additionally, it is contemplated that in at least some embodiments, the phosphor composition will be more evenly distributed when applied to the LED than would be obtained using conventional techniques.
上述方法之實施例的另一優點在於:由於膜具有順從性,故其可與下伏焊線之形狀等形,而無需進一步處理。具體而言,膜之等形性質可消除在膜中切割溝槽或凹槽以容納焊線的需要。因此,該方法所需之步驟可比一些習用技術中所用少。該方法之實施例亦可消除如下需要:在將磷光體成份沈積於LED上之前鋪置覆蓋焊線之單獨層,此係其他習用技術中所用之方法。此特徵使得膜110中之磷光體直接毗鄰LED 130、例如直接毗鄰作用表面132定位。此外,可在膜與LED嚙合之前向膜中添加磷光體成份。此特徵使得可與LED晶粒完全分離、例如與製造及處理晶粒平行地製造膜。此佈置可減少封裝晶粒所需之流動時間且可允許單獨形成或貯備晶粒及膜,此減小在總體製程中形成瓶頸的可能性。上述特徵可單獨或組合減少與封裝晶粒相關之時間及花費,且因此可減少所得晶粒封裝之成本。Another advantage of embodiments of the above method is that since the film is compliant, it can be shaped like the shape of the underlying wire without further processing. In particular, the isomorphic nature of the film eliminates the need to cut grooves or grooves in the film to accommodate the bond wires. Therefore, the steps required for this method can be used less than in some conventional techniques. Embodiments of the method may also eliminate the need to lay a separate layer covering the bond wire prior to depositing the phosphor component onto the LED, which is the method used in other conventional techniques. This feature allows the phosphor in film 110 to be positioned directly adjacent to LED 130, such as directly adjacent active surface 132. In addition, the phosphor component can be added to the film before it is engaged with the LED. This feature makes it possible to completely separate the LED dies, for example to fabricate films in parallel with the fabrication and processing of the dies. This arrangement can reduce the flow time required to package the die and can allow separate formation or storage of the die and film, which reduces the likelihood of bottlenecks in the overall process. The above features can reduce the time and expense associated with packaging the die, either alone or in combination, and thus can reduce the cost of the resulting die package.
依據前文所述,將瞭解,本文已出於圖解闡釋目的闡釋了本發明之具體實施例,但可在不背離本發明之情況下作出各種修改。舉例而言,基質材料可包括亦為磷光體成份提供支撐、且具有黏著特性以有利於結合至LED及/或支撐部件的其他組成(例如,除環氧樹脂外)。該等材料可包括(但不限於)固態、部分固化之熱固性黏著材料,其中一個實例係b階段環氧樹脂。LED可具有與圖中所示之彼等不同之形狀、尺寸及/或其他特性。在其他實施例中,可組合或消除在特定實施例上下文中闡述之本發明的某些特徵。舉例而言,在一些實施例中,可消除圖1中所示之載體120,且在其他實施例中可與圖4中所示之磷光膜組合。此外,儘管已在彼等實施例之上下文中闡述與某些實施例相關之優點,但其他實施例亦可呈現該等優點。在本發明範疇內,並非所有實施例均需要一定呈現該等優點。因此,本發明及相關技術可涵蓋本文中未明確展示或闡述之其他實施例。In view of the foregoing, it will be understood that the particular embodiments of the invention are described herein For example, the matrix material can include other components that also provide support for the phosphor component and have adhesive properties to facilitate bonding to the LED and/or support component (eg, in addition to epoxy). Such materials may include, but are not limited to, solid, partially cured thermoset adhesive materials, one example being a b-stage epoxy. The LEDs can have different shapes, sizes, and/or other characteristics than those shown in the figures. In other embodiments, certain features of the invention set forth in the context of particular embodiments may be combined or eliminated. For example, in some embodiments, the carrier 120 shown in FIG. 1 can be eliminated, and in other embodiments can be combined with the phosphor film shown in FIG. In addition, while the advantages associated with certain embodiments have been set forth in the context of the embodiments, other embodiments may present such advantages. Not all embodiments are required to exhibit such advantages within the scope of the invention. Accordingly, the present invention and related art may encompass other embodiments not explicitly shown or described herein.
100...LED系統100. . . LED system
101...封裝101. . . Package
102a...封裝結合位點102a. . . Package binding site
102b...封裝結合位點102b. . . Package binding site
103...靜電放電(ESD)晶粒103. . . Electrostatic discharge (ESD) grain
104...焊線104. . . Welding wire
110...磷光膜110. . . Phosphor film
111...基質材料111. . . Matrix material
112...磷光體成份112. . . Phosphor composition
113a...第一表面113a. . . First surface
113b...第二表面113b. . . Second surface
115a...基質膜層115a. . . Matrix membrane
115b...磷光膜層115b. . . Phosphorescent film layer
120...載體120. . . Carrier
121...透鏡部分121. . . Lens part
130...LED130. . . led
131a...第一LED結合位點131a. . . First LED binding site
131b...第二LED結合位點131b. . . Second LED binding site
132...作用表面132. . . Surface
133...LED晶圓133. . . LED wafer
140...支撐部件140. . . Support member
141a...第一支撐部件結合位點141a. . . First support member binding site
141b...第二支撐部件結合位點141b. . . Second support member binding site
142...通孔142. . . Through hole
143a...第一表面143a. . . First surface
143b...第二表面143b. . . Second surface
310...多層磷光膜310. . . Multilayer phosphor film
401...封裝401. . . Package
420...載體420. . . Carrier
510...磷光膜510. . . Phosphor film
516...膜元件516. . . Membrane element
520...載體晶圓520. . . Carrier wafer
圖1係根據本發明實施例而組態之LED系統中組件之局部示意性剖視側面圖。1 is a partial schematic cross-sectional side view of an assembly of an LED system configured in accordance with an embodiment of the present invention.
圖2係圖1中所示各組件的局部示意性剖視側面圖,其結合形成本發明實施例之封裝。2 is a partial schematic cross-sectional side view of the components shown in FIG. 1 in combination with a package forming an embodiment of the present invention.
圖3A係繪示根據本發明實施例形成磷光膜之方法的流程圖。3A is a flow chart showing a method of forming a phosphor film according to an embodiment of the present invention.
圖3B係繪示根據本發明之另一實施例形成多層磷光膜之方法的流程圖。3B is a flow chart showing a method of forming a multilayer phosphor film in accordance with another embodiment of the present invention.
圖4係根據本發明之一實施例具有多層磷光膜之封裝的局部示意性分解剖視側面圖。4 is a partial schematic exploded cross-sectional side view of a package having a multilayer phosphor film in accordance with an embodiment of the present invention.
圖5係根據本發明之其他實施例形成LED封裝的多種方法之局部示意性圖解。5 is a partial schematic illustration of various methods of forming an LED package in accordance with other embodiments of the present invention.
100...LED系統100. . . LED system
101...封裝101. . . Package
102a...封裝結合位點102a. . . Package binding site
102b...封裝結合位點102b. . . Package binding site
103...靜電放電(ESD)晶粒103. . . Electrostatic discharge (ESD) grain
104...焊線104. . . Welding wire
110...磷光膜110. . . Phosphor film
111...基質材料111. . . Matrix material
112...磷光體成份112. . . Phosphor composition
113a...第一表面113a. . . First surface
113b...第二表面113b. . . Second surface
120...載體120. . . Carrier
121...透鏡部分121. . . Lens part
130...LED130. . . led
131a...第一LED結合位點131a. . . First LED binding site
131b...第二LED結合位點131b. . . Second LED binding site
132...作用表面132. . . Surface
140...支撐部件140. . . Support member
141a...第一支撐部件結合位點141a. . . First support member binding site
141b...第二支撐部件結合位點141b. . . Second support member binding site
142...通孔142. . . Through hole
143a...第一表面143a. . . First surface
143b...第二表面143b. . . Second surface
Claims (43)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/819,795 US20110309393A1 (en) | 2010-06-21 | 2010-06-21 | Packaged leds with phosphor films, and associated systems and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201205891A TW201205891A (en) | 2012-02-01 |
TWI458134B true TWI458134B (en) | 2014-10-21 |
Family
ID=45327876
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100121668A TWI458134B (en) | 2010-06-21 | 2011-06-21 | Packaged leds with phosphor films, and associated systems and methods |
Country Status (6)
Country | Link |
---|---|
US (4) | US20110309393A1 (en) |
KR (1) | KR101627021B1 (en) |
CN (2) | CN102947958A (en) |
SG (3) | SG186164A1 (en) |
TW (1) | TWI458134B (en) |
WO (1) | WO2011163170A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
WO2012026757A2 (en) * | 2010-08-25 | 2012-03-01 | 삼성엘이디 주식회사 | Phosphor film, method for manufacturing same, method for depositing a phosphor layer, method for manufacturing a light-emitting device package, and light-emitting device package |
JP5767062B2 (en) * | 2010-09-30 | 2015-08-19 | 日東電工株式会社 | Light emitting diode sealing material and method for manufacturing light emitting diode device |
US20120112237A1 (en) * | 2010-11-05 | 2012-05-10 | Shenzhen China Star Optoelectronics Technology Co. Ltd. | Led package structure |
CN103427003B (en) * | 2012-05-25 | 2016-08-10 | 华夏光股份有限公司 | The forming method of semiconductor light-emitting apparatus |
DE102012107290A1 (en) * | 2012-08-08 | 2014-02-13 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device, conversion agent platelets and method of making a conversion agent platelet |
TWI644450B (en) * | 2012-08-30 | 2018-12-11 | 晶元光電股份有限公司 | Light emitting device |
US9761765B2 (en) * | 2013-04-08 | 2017-09-12 | Koninklijke Philips N.V. | LED with high thermal conductivity particles in phosphor conversion layer |
JP2015056650A (en) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | Light-emitting device |
JP2015106641A (en) * | 2013-11-29 | 2015-06-08 | 日亜化学工業株式会社 | Light emitting device |
KR102116986B1 (en) | 2014-02-17 | 2020-05-29 | 삼성전자 주식회사 | LED package |
DE102014106074A1 (en) * | 2014-04-30 | 2015-11-19 | Osram Opto Semiconductors Gmbh | Lighting device and method for producing a lighting device |
CN112018224B (en) * | 2020-09-09 | 2022-10-28 | 京东方科技集团股份有限公司 | Die bonding method and display panel |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070018573A1 (en) * | 2004-02-18 | 2007-01-25 | Showa Denko K,K. | Phosphor, production method thereof and light-emitting device using the phosphor |
US7176501B2 (en) * | 2003-05-12 | 2007-02-13 | Luxpia Co, Ltd | Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same |
US20100013373A1 (en) * | 2008-07-18 | 2010-01-21 | Sharp Kabushiki Kaisha | Light-emitting device and method for manufacturing light-emitting device |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1177377C (en) * | 2000-09-01 | 2004-11-24 | 西铁城电子股份有限公司 | Surface assembled luminescent diode and its manufacture method |
JP4077170B2 (en) * | 2000-09-21 | 2008-04-16 | シャープ株式会社 | Semiconductor light emitting device |
US6989412B2 (en) * | 2001-06-06 | 2006-01-24 | Henkel Corporation | Epoxy molding compounds containing phosphor and process for preparing such compositions |
US20070013057A1 (en) * | 2003-05-05 | 2007-01-18 | Joseph Mazzochette | Multicolor LED assembly with improved color mixing |
KR100527921B1 (en) * | 2003-05-12 | 2005-11-15 | 럭스피아 주식회사 | White Semiconductor Light Emitting Device |
CN1317775C (en) * | 2003-12-10 | 2007-05-23 | 玄基光电半导体股份有限公司 | Packaging structure of LED and packaging method thereof |
KR100540848B1 (en) * | 2004-01-02 | 2006-01-11 | 주식회사 메디아나전자 | White LED device comprising dual-mold and manufacturing method for the same |
US20050200796A1 (en) * | 2004-02-09 | 2005-09-15 | Hiroki Iwanaga | LED lighting apparatus |
WO2005106978A1 (en) * | 2004-04-28 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | Light-emitting device and method for manufacturing same |
US20050264194A1 (en) * | 2004-05-25 | 2005-12-01 | Ng Kee Y | Mold compound with fluorescent material and a light-emitting device made therefrom |
KR100665298B1 (en) * | 2004-06-10 | 2007-01-04 | 서울반도체 주식회사 | Light emitting device |
US7372198B2 (en) | 2004-09-23 | 2008-05-13 | Cree, Inc. | Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor |
KR101253381B1 (en) * | 2005-05-11 | 2013-04-11 | 니폰 덴키 가라스 가부시키가이샤 | Fluorescent substance composite glass, fluorescent substance composite glass green sheet, and process for producing fluorescent substance composite glass |
WO2006127030A1 (en) * | 2005-05-20 | 2006-11-30 | Cree, Inc. | High efficacy white led |
KR100638868B1 (en) * | 2005-06-20 | 2006-10-27 | 삼성전기주식회사 | Led package with metal reflection layer and method of manufacturing the same |
US7294861B2 (en) * | 2005-06-30 | 2007-11-13 | 3M Innovative Properties Company | Phosphor tape article |
US7365371B2 (en) | 2005-08-04 | 2008-04-29 | Cree, Inc. | Packages for semiconductor light emitting devices utilizing dispensed encapsulants |
US7273768B2 (en) | 2005-08-30 | 2007-09-25 | Mutual-Pak Technology Co. Ltd. | Wafer-level package and IC module assembly method for the wafer-level package |
JP2007067204A (en) * | 2005-08-31 | 2007-03-15 | Toshiba Lighting & Technology Corp | Light-emitting diode device |
EP1935921B1 (en) * | 2005-09-22 | 2017-01-04 | Mitsubishi Chemical Corporation | Sealant for semiconductor light emitting device and method for manufacturing such sealant, and semiconductor light emitting device using such sealant |
TW200730616A (en) * | 2005-09-30 | 2007-08-16 | Univ California | Cerium based phosphor materials for solid-state lighting applications |
KR100685845B1 (en) * | 2005-10-21 | 2007-02-22 | 삼성에스디아이 주식회사 | Organic eletroluminescence display device and method for fabricating of the same |
US7344952B2 (en) * | 2005-10-28 | 2008-03-18 | Philips Lumileds Lighting Company, Llc | Laminating encapsulant film containing phosphor over LEDs |
US7569406B2 (en) * | 2006-01-09 | 2009-08-04 | Cree, Inc. | Method for coating semiconductor device using droplet deposition |
JP2009524212A (en) | 2006-01-16 | 2009-06-25 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | Light emitting device having Eu-containing phosphor material |
JP4820184B2 (en) * | 2006-02-20 | 2011-11-24 | シチズン電子株式会社 | Light emitting device and manufacturing method thereof |
TWI284433B (en) * | 2006-02-23 | 2007-07-21 | Novalite Optronics Corp | Light emitting diode package and fabricating method thereof |
EP2011164B1 (en) * | 2006-04-24 | 2018-08-29 | Cree, Inc. | Side-view surface mount white led |
TW200802948A (en) * | 2006-06-28 | 2008-01-01 | Everlight Electronics Co Ltd | Method of packaging a multicolor LED and a packaging structure thereof |
KR100851636B1 (en) * | 2006-07-27 | 2008-08-13 | 삼성전기주식회사 | Surface mounting light emitting diode device |
CN101513120A (en) * | 2006-08-03 | 2009-08-19 | 英特曼帝克司公司 | LED lighting arrangement including light emitting phosphor |
CN102324462B (en) * | 2006-10-12 | 2015-07-01 | 凯博瑞奥斯技术公司 | Nanowire-based transparent conductors and applications thereof |
TWI364823B (en) * | 2006-11-03 | 2012-05-21 | Siliconware Precision Industries Co Ltd | Sensor type semiconductor package and fabrication method thereof |
US20080121911A1 (en) | 2006-11-28 | 2008-05-29 | Cree, Inc. | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same |
US20080169480A1 (en) * | 2007-01-11 | 2008-07-17 | Visera Technologies Company Limited | Optoelectronic device package and packaging method thereof |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
TWI392111B (en) | 2007-04-11 | 2013-04-01 | Everlight Electronics Co Ltd | Phosphor coating method for led device |
JP5104490B2 (en) | 2007-04-16 | 2012-12-19 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
US20090001599A1 (en) | 2007-06-28 | 2009-01-01 | Spansion Llc | Die attachment, die stacking, and wire embedding using film |
KR101361575B1 (en) | 2007-09-17 | 2014-02-13 | 삼성전자주식회사 | Light Emitting Diode package and method of manufacturing the same |
RU2484552C2 (en) * | 2008-01-31 | 2013-06-10 | Конинклейке Филипс Электроникс Н.В. | Light-emitting device |
US7928458B2 (en) * | 2008-07-15 | 2011-04-19 | Visera Technologies Company Limited | Light-emitting diode device and method for fabricating the same |
US20100123386A1 (en) * | 2008-11-13 | 2010-05-20 | Maven Optronics Corp. | Phosphor-Coated Light Extraction Structures for Phosphor-Converted Light Emitting Devices |
KR101039957B1 (en) * | 2008-11-18 | 2011-06-09 | 엘지이노텍 주식회사 | Light emitting device and display apparatus having the same |
US20100181582A1 (en) * | 2009-01-22 | 2010-07-22 | Intematix Corporation | Light emitting devices with phosphor wavelength conversion and methods of manufacture thereof |
CN101740707B (en) * | 2009-12-11 | 2013-11-06 | 晶科电子(广州)有限公司 | Preformed fluorescent powder patch and method for encapsulating same and light emitting diode |
US8771577B2 (en) * | 2010-02-16 | 2014-07-08 | Koninklijke Philips N.V. | Light emitting device with molded wavelength converting layer |
US8598612B2 (en) * | 2010-03-30 | 2013-12-03 | Micron Technology, Inc. | Light emitting diode thermally enhanced cavity package and method of manufacture |
US20110309393A1 (en) * | 2010-06-21 | 2011-12-22 | Micron Technology, Inc. | Packaged leds with phosphor films, and associated systems and methods |
WO2012026757A2 (en) * | 2010-08-25 | 2012-03-01 | 삼성엘이디 주식회사 | Phosphor film, method for manufacturing same, method for depositing a phosphor layer, method for manufacturing a light-emitting device package, and light-emitting device package |
KR101253586B1 (en) * | 2010-08-25 | 2013-04-11 | 삼성전자주식회사 | Phosphor film, method of manufacturing the same, method of coating phosphor layer on an LED chip, method of manufacturing LED package and LED package manufactured thereof |
-
2010
- 2010-06-21 US US12/819,795 patent/US20110309393A1/en not_active Abandoned
-
2011
- 2011-06-21 KR KR1020137000706A patent/KR101627021B1/en active IP Right Grant
- 2011-06-21 CN CN2011800306967A patent/CN102947958A/en active Pending
- 2011-06-21 TW TW100121668A patent/TWI458134B/en active
- 2011-06-21 CN CN201910757452.7A patent/CN110429168B/en active Active
- 2011-06-21 SG SG2012089173A patent/SG186164A1/en unknown
- 2011-06-21 SG SG10201507806XA patent/SG10201507806XA/en unknown
- 2011-06-21 WO PCT/US2011/041166 patent/WO2011163170A2/en active Application Filing
- 2011-06-21 SG SG10201911967SA patent/SG10201911967SA/en unknown
-
2017
- 2017-03-21 US US15/464,596 patent/US11081625B2/en active Active
-
2021
- 2021-08-02 US US17/391,703 patent/US11901494B2/en active Active
-
2024
- 2024-02-12 US US18/439,689 patent/US20240186465A1/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7176501B2 (en) * | 2003-05-12 | 2007-02-13 | Luxpia Co, Ltd | Tb,B-based yellow phosphor, its preparation method, and white semiconductor light emitting device incorporating the same |
US20070018573A1 (en) * | 2004-02-18 | 2007-01-25 | Showa Denko K,K. | Phosphor, production method thereof and light-emitting device using the phosphor |
US20100013373A1 (en) * | 2008-07-18 | 2010-01-21 | Sharp Kabushiki Kaisha | Light-emitting device and method for manufacturing light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
US11081625B2 (en) | 2021-08-03 |
CN102947958A (en) | 2013-02-27 |
SG186164A1 (en) | 2013-01-30 |
US20240186465A1 (en) | 2024-06-06 |
CN110429168A (en) | 2019-11-08 |
SG10201911967SA (en) | 2020-02-27 |
SG10201507806XA (en) | 2015-10-29 |
WO2011163170A2 (en) | 2011-12-29 |
KR20130036754A (en) | 2013-04-12 |
KR101627021B1 (en) | 2016-06-02 |
CN110429168B (en) | 2022-11-04 |
WO2011163170A3 (en) | 2012-04-19 |
US11901494B2 (en) | 2024-02-13 |
US20210359173A1 (en) | 2021-11-18 |
US20110309393A1 (en) | 2011-12-22 |
US20170194537A1 (en) | 2017-07-06 |
TW201205891A (en) | 2012-02-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI458134B (en) | Packaged leds with phosphor films, and associated systems and methods | |
TWI686965B (en) | Light emitting device and method for manufacturing thereof | |
JP6599295B2 (en) | LIGHT EMITTING ELEMENT HAVING BELT ANGLE REFLECTOR AND MANUFACTURING METHOD | |
JP6519311B2 (en) | Light emitting device | |
US8581291B2 (en) | Semiconductor device and method for manufacturing the same | |
TWI499097B (en) | Package structure and package process of light emitting diode | |
US20090114937A1 (en) | Resin-sealed light emitting device and its manufacturing method | |
US20050212405A1 (en) | Semiconductor light emitting devices including flexible film having therein an optical element, and methods of assembling same | |
US20080121911A1 (en) | Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling same | |
US20070278513A1 (en) | Semiconductor light emitting device and method of fabricating the same | |
TWI446590B (en) | Light emitting diode package structure and manufacturing method thereof | |
TWI509839B (en) | Light emitting diode package and method for making it | |
KR20140022019A (en) | Light emitting device and method for manufacturing same | |
KR20150119179A (en) | Led module with hermetic seal of wavelength conversion material | |
JP2003234511A (en) | Semiconductor light-emitting device and manufacturing method thereof | |
TW201251145A (en) | Light emitting device module and method of manufacturing the same | |
TW201338213A (en) | Method for manufacturing LED package | |
US7910944B2 (en) | Side mountable semiconductor light emitting device packages and panels | |
TW201344979A (en) | Light emitting device and manufacturing method thereof | |
US20120037937A1 (en) | Led package structure and method of making the same | |
KR102091534B1 (en) | Chip scale packaging light emitting device and manufacturing method of the same | |
KR101086997B1 (en) | Light emitting device package, method for fabricating the same and camera flash module using the same | |
TW201344989A (en) | Method for manufacturing LED package | |
KR101984897B1 (en) | Light emitting diode package and manufacturing method thereof | |
JP2007109911A (en) | Light emitting diode and its manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent |