CN103165794B - Optical semiconductor device base station, its manufacture method and optical semiconductor device - Google Patents
Optical semiconductor device base station, its manufacture method and optical semiconductor device Download PDFInfo
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- CN103165794B CN103165794B CN201210544701.2A CN201210544701A CN103165794B CN 103165794 B CN103165794 B CN 103165794B CN 201210544701 A CN201210544701 A CN 201210544701A CN 103165794 B CN103165794 B CN 103165794B
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- semiconductor device
- optical semiconductor
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- device base
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The present invention provides optical semiconductor device base station and manufacture method, for realizing both mechanical stability and high-durability, the optical semiconductor device of high-cooling property.The manufacture method of a kind of optical semiconductor device base station, optical semiconductor device base station has multiple wafer and holds portion, is used for holding semiconductor wafer；Multiple signal connecting element, are electrically connected at the semiconductor wafer held and provide electrode portion to outside；Have: preparing the operation of metal framework, metal framework is formed with multiple wafer and holds portion and signal connecting element, and signal connecting element has thickness less than the part that multiple wafer holds the thickness in portion；Manufacture the operation of optical semiconductor device base station, to make multiple wafer hold the surface in portion and in the way of the back side is exposed and at least one side of signal connecting element exposes simultaneously, utilize resin landfill part in addition to the multiple wafers having been formed on metal framework hold portion and signal connecting element, and optical semiconductor device base station is formed as tabular.
Description
Technical field
The present invention relates to a kind of optical semiconductor device base station and manufacture method thereof and use this optical semiconductor to fill
Putting the optical semiconductor device using base station, described optical semiconductor device base station is to be formed with resin compounded by metal.
Background technology
The optical elements such as light emitting diode (light emitting diode, LED), photodiode, owing to efficiency is high,
And higher to the toleration of external carbuncle and environmental effect, thus be widely used in industrial circle.Further, optical element is not only
Efficiency is higher, and the life-span is long, small and exquisite portable, may be constructed the most different structures, it is possible to by relatively low manufacturing cost
Manufacture.
For example, as it is known that in the material connecting carrier of semiconductor wafer to be held, use and there is fibre reinforced materials
Silicone material, to improve ultra-violet resistance and thermostability (with reference to patent documentation 1).
Especially in the optical semiconductor device of high output producing amount of heat, while high-fire resistance, have
The structure improving thermal diffusivity is the most critically important.
[look-ahead technique document]
(patent documentation)
Patent documentation 1: Japanese Unexamined Patent Application Publication 2011-521481 publication
Summary of the invention
[inventing problem to be solved]
It is an object of the invention to provide a kind of optical semiconductor device base station and manufacture method thereof, described optics is partly led
Body device base station is for realizing a kind of both mechanical stability and high-durability, the optical semiconductor device of high-cooling property.
[solving the technological means of problem]
In order to reach above-mentioned purpose, according to the present invention, it is provided that the manufacture method of a kind of optical semiconductor device base station, it is
The method manufacturing optical semiconductor device base station, described optical semiconductor device base station has multiple wafer and holds portion, uses
In holding semiconductor wafer；And, multiple signal connecting element, it is electrically connected at the aforementioned semiconductor wafer held, and to outside
Electrode portion is provided；Wherein, the manufacture method of described optical semiconductor device base station is characterized by following operation:
Preparing the operation of metal framework, described metal framework is formed with aforesaid plurality of wafer and holds portion and be connected with aforementioned signal
Portion, this signal connecting element has thickness less than the part that the plurality of wafer holds the thickness in portion；And,
Manufacture the operation of aforementioned optical semiconductor device base station, so that aforesaid plurality of wafer holds surface and the back side in portion
Expose simultaneously, and the mode that at least one side of aforementioned signal connecting portion is exposed, utilize resin landfill except having been formed on aforementioned metal
Aforesaid plurality of wafer on framework holds the part outside portion and signal connecting element, and by described optical semiconductor device base station
Be formed as tabular.
This kind of manufacture method, can manufacture a kind of optical semiconductor device base station, and it can utilize exposing surface simultaneously
Portion is held, effectively heat produced by release semiconductor wafer with the wafer at the back side.Partly lead and it is possible to manufacture a kind of optics
Body device base station, wherein, signal connecting element has thickness less than the part that wafer holds the thickness in portion, and utilizes resin to fill
Part in addition to the multiple wafers having been formed on metal framework hold portion and signal connecting element, and be formed as tabular, then
Intensity will be improved, and warpage reduces.By using this optical semiconductor device base station, it is possible to achieve a kind of mechanicalness is steady
Determine and high-durability, the optical semiconductor device of high-cooling property.
Now, in the operation preparing aforementioned metal framework, etching metal plate can be passed through, and form aforesaid plurality of wafer
Hold portion and signal connecting element.
So, metallic plate can easily be prepared by low cost.
And at this point it is possible to have following operation: except electrode portion and the aforesaid plurality of crystalline substance of aforesaid plurality of signal connecting element
Sheet holds the aforesaid semiconductor wafer one to be held of the aforementioned optical semiconductor device base station beyond the part exposed in portion
On the surface of side, carry out ester moulding.
Owing to having this kind of operation, thus can on the surface of optical semiconductor device base station, formed reflecting mirror or
The resin formation parts such as lens, it is possible to manufacture the H.D optical semiconductor device use that a kind of durability is further improved
Base station.
And now, utilizing aforementioned resin to fill, making aforementioned optical semiconductor device base station be formed as the work of tabular
In sequence, preferably so that the thickness of the part being formed with aforementioned each signal connecting element of aforementioned optical semiconductor device base station is more than
Aforementioned each wafer holds the mode of the thickness in portion, fills aforementioned resin.
So, when forming the resin formation part such as reflecting mirror or lens on the surface at optical semiconductor device base station
Time, can suppress to produce on the surface of each signal connecting element resin burr (burr).
And now, utilizing aforementioned resin to fill, so that aforementioned optical semiconductor device base station is formed as tabular
In operation, it is possible to use thermo-compressed, printing coating or metal die shape, and fill aforementioned resin.
So, can positively manufacture a kind of optical semiconductor device base station, it is to utilize resin positively to fill out
Burying the part in addition to the multiple wafers having been formed on metal framework hold portion and signal connecting element, intensity is improved.
And at this point it is possible to the material of aforementioned landfill resin is set to thermosetting resin or thermoplastic resin, it is preferably,
Aforementioned landfill resin comprises fibre reinforced materials.And it is possible to use glass fibre, included in aforementioned landfill resin
Fibre reinforced materials.
If using the resin of this kind of material as landfill resin, a kind of thermostability can be manufactured and intensity is the most excellent
Optical semiconductor device base station.
And now, utilizing aforementioned resin to fill to form tabular, manufacturing aforementioned optical semiconductor device base station
Operation subsequent handling in, can implement the surface of aforementioned base station to grind and/or the surface of resist coating processes.
So, the optical semiconductor device base station of a kind of high-quality can will be manufactured.
Further, according to the present invention, it is provided that a kind of optical semiconductor device base station, there is multiple wafer and hold portion, be used for
Hold semiconductor wafer；And, multiple signal connecting element, it is electrically connected at the aforementioned semiconductor wafer held, and carries to outside
Power pole portion；Wherein, described optical semiconductor device base station is characterised by:
Be made up of with resin matrix portion metal framework, wherein, described metal framework be formed aforesaid plurality of wafer hold portion,
And have thickness less than the aforementioned signal connecting portion of part that the plurality of wafer holds the thickness in portion；Described resin matrix portion, be
So that aforesaid plurality of wafer holds the surface in portion and the back side is exposed simultaneously, and the side that at least one side of aforementioned signal connecting portion is exposed
Formula, fills the part extremely in addition to the aforesaid plurality of wafer having been formed on aforementioned metal framework holds portion and signal connecting element,
And described optical semiconductor device base station is formed as tabular.
If this kind of optical semiconductor device base station, then the wafer at exposing surface and the back side simultaneously can be utilized to carry
Hold portion, effectively heat produced by release semiconductor wafer.Further, if optical semiconductor device base station is female by resin
Body is constituted, and described resin matrix portion landfill holds portion with to have thickness little to except the multiple wafers having been formed on metal framework
Part outside the signal connecting element of the part holding the thickness in portion in wafer, then intensity will be improved, and warpage reduction.
By using this optical semiconductor device base station, it is possible to achieve a kind of both mechanical stability and high-durability, the light of high-cooling property
Learn semiconductor device.
Now, optical semiconductor device base station can be except electrode portion and the aforesaid plurality of crystalline substance of aforesaid plurality of signal connecting element
Sheet holds the aforesaid semiconductor wafer one to be held of the aforementioned optical semiconductor device base station beyond the part exposed in portion
On the surface of side, there is resin formation part.
If so having the resin formation part such as reflecting mirror or lens on the surface of optical semiconductor device base station,
Just can seek the multifunction of optical semiconductor device base station, and improve durability further.
Now, it is preferably, so that the portion being formed with aforementioned each signal connecting element of aforementioned optical semiconductor device base station
The thickness divided holds the mode of the thickness in portion more than aforementioned each wafer, and landfill aforementioned resin forms.
If this kind of optical semiconductor device base station, then when shape on the surface at optical semiconductor device base station
When becoming the resin formation part such as reflecting mirror or lens, can suppress to produce on the surface of each signal connecting element resin burr.
And at this point it is possible to making the material in aforementioned resin parent portion is thermosetting resin or thermoplastic resin, it is preferably,
Aforementioned resin parent portion comprises fibre reinforced materials.And it is possible to make the fibre reinforced materials that aforementioned resin parent portion is comprised
For glass fibre.
If resin matrix portion is this kind of material, it is possible to manufacture a kind of thermostability and the most excellent optics of intensity is partly led
Body device base station.
Further, the present invention provides a kind of optical semiconductor device, is characterised by, the optical semiconductor device in the present invention is used
The plurality of wafer of base station holds in portion, is carried with semiconductor wafer respectively, and carry out splitting by cutting (dicing) and
Become.
This kind of optical semiconductor device both mechanical stability and have high-durability, high-cooling property, is adapted for use with producing big
The situation of the semiconductor wafer of calorimetric amount or situation about using under hot and humid environment.
(effect of invention)
In the manufacture of the optical semiconductor device base station of the present invention, prepare metal framework, shape on described metal framework
Become to have multiple wafer hold portion and have thickness less than the signal connecting element of part that the plurality of wafer holds the thickness in portion；Profit
Fill the part in addition to the multiple wafers having been formed on metal framework hold portion and signal connecting element with resin, and make many
Individual wafer holds the surface in portion and the back side is exposed simultaneously, and at least one side of signal connecting element is exposed；Further, described optics is partly led
Body device base station is formed as tabular；Therefore, it can utilize wafer to hold portion, effectively heat produced by release semiconductor wafer
Amount, can manufacture the optical semiconductor device base station that a kind of intensity is improved and warpage reduces.By using this optics half
Conductor device base station, it is possible to achieve a kind of both mechanical stability and high-durability, the optical semiconductor device of high-cooling property.
Accompanying drawing explanation
Fig. 1 is the figure of an example of the optical semiconductor device base station illustrating the present invention.
Fig. 2 A is the top perspective view of the part surrounded by dotted line of Fig. 1.
Fig. 2 B is the profile after the part surrounded by dotted line of Fig. 1 being amplified.
Fig. 3 A, Fig. 3 B, Fig. 3 C, Fig. 3 D are parts for another example of the optical semiconductor device base station illustrating the present invention
Profile.
Fig. 4 A, Fig. 4 B are the explanatory diagrams of the surface condition of the optical semiconductor device base station that the present invention is described.
Fig. 5 is the top view of the metal framework of the optical semiconductor device base station illustrating the present invention.
Fig. 6 is the landfill resin in metal framework of the manufacture method of the optical semiconductor device base station illustrating the present invention
The flow chart of an example of operation.
Fig. 7 A, Fig. 7 B are the figures of an example of the optical semiconductor device illustrating the present invention.
Fig. 8 is the figure of another example of the optical semiconductor device illustrating the present invention.
Fig. 9 is the figure of the another example of the optical semiconductor device illustrating the present invention.
Description of reference numerals
1 optical semiconductor device base station
2 wafers hold portion
3 signal connecting element
4 metal frameworks
5 resin matrix portions
6 fibre reinforced materials
7 resin formation parts
8 linking parts
10 optical semiconductor devices
11 semiconductor wafers
12 bonding wires
13 sealings
14 reflecting mirrors
Detailed description of the invention
Hereinafter, the embodiment of the present invention is described, but the present invention is not limited to these embodiments.
Previously, when using optical semiconductor device the most in high temperature environments, there is problems in that reflectance declines,
Or light flux values declines to a great extent along with the passage of the time of use.
Therefore, the present inventor repeatedly enters to make great efforts research for solving this kind of problem.Known it is previously at quasiconductor to be held
In the portion of material of wafer, use silicone (silicone) material with fibre reinforced materials, to improve thermostability.But,
It is during especially the light at semiconductor wafer exports optical semiconductor device that is higher and that can produce amount of heat, such and insufficient,
Heat produced by semiconductor wafer is made effectively to discharge critically important.Electromotor and the headlight of its periphery at such as automobile
(headlight) in the case of the environment that equitemperature rises using optical semiconductor device, the most important.
The present inventor studies to realize high-cooling property, and result is expected: if only made by the load of semiconductor wafer
Surface and the back side of holding the part that the metal in portion is constituted are exposed, it is possible to heat produced by release semiconductor wafer effectively
Amount, further, holds portion and the base station of the resin compounded with fibre reinforced materials by use is a kind of by this wafer,
Manufacture optical semiconductor device, intensity can be improved, thus complete the present invention.
First, the optical semiconductor device base station of the present invention is described.The optical semiconductor device base station of the present invention can
To use the shape of set base station, this shape can support large area printed base plate or matrix array encapsulation (matrix array
Package, MAP) mode of production.Therefore, optical semiconductor device base station is configured to, and is provided with multiple optical semiconductor
Wafer.
As it is shown in figure 1, optical semiconductor device base station 1 has: multiple wafers hold portion 2, it is used for holding semiconductor die
Sheet；And, multiple signal connecting element 3, it is electrically connected at the semiconductor wafer held, and electrode portion is provided to outside.
Each wafer holds portion and the quantity of signal connecting element or configuration is not particularly limited, and is preferably configured to, such as, and can
To pass through cutting, and it is divided into less single unit.
As it is shown in figure 1, each wafer holds portion 2 and signal connecting element 3 is to be formed on metal framework 4.
Optical semiconductor device base station 1 is to be made up of with resin matrix portion 5 metal framework 4, wherein, and described metal framework
4 have multiple wafer holds portion 2 and signal connecting element 3；Further, resin matrix portion 5 be landfill to except multiple wafers hold portion 2 with
Part outside signal connecting element 3；Further, described optical semiconductor device base station 1 is formed as tabular.
Fig. 2 A is the top perspective view of the part surrounded by dotted line of Fig. 1, and Fig. 2 B is the portion surrounded by dotted line of Fig. 1
The profile divided.
As shown in Fig. 2 A, Fig. 2 B, this part has: 1 wafer holds portion 2；And, 2 signal connecting element 3, it is electrically connected with
In the semiconductor wafer held herein.Exposed by least one side making this signal connecting element 3, and electrode is provided to outside
Portion.Herein, the one side of signal connecting element 3, without all exposing, exposes a part.Signal connecting element 3 is configured to, can
In order to such as soldering or gold stannum (Au-Sn) welding, the gold thread connected on semiconductor wafer is installed.
Wafer holds and is provided with crystal grain liner (die pad) (not shown) in portion 2, and it is for supporting semiconductor wafer.
As shown in Figure 2 B, wafer holds the surface in portion 2 and the back side is exposed simultaneously.As it has been described above, it is to be formed that wafer holds portion 2
On metal framework, and it is made up of metal.So, if it is that the wafer being made up of metal holds the structure in portion 2 simultaneously
Exposing surface and the back side, then the exposed surface that just heat produced by semiconductor wafer can be made to hold portion from wafer is released effectively
Put to outside.Herein, wafer holds portion 2 can as shown in Figure 3 B, and a part has the breach running through surface and the back side, or such as figure
Shown in 3D, a part has the part of thinner thickness.
And, it is also possible to utilize wafer the to hold back side that portion 2 exposes, i.e. contrary with the surface of semiconductor wafer to be held
Surface, as outer electrode.
Signal connecting element 3 has thickness less than the part that wafer holds the thickness in portion 2, and in the part relatively thin at this, landfill has
Resin.Further, in the space that wafer holds between portion 2 and signal connecting element 3, also landfill has resin, thus it is female to form resin
Body 5.So, the structure of optical semiconductor device base station 1 is: be formed with resin matrix portion 5, described resin matrix portion
5 is in the gap with the metal framework 4 that multiple wafer holds portion 2 and signal connecting element 3, and landfill has resin.Utilize this to tie
Structure, can improve mechanical strength and the thermostability of optical semiconductor device base station 1, can reduce optical semiconductor device base
The warpage of platform 1.
Herein, the material that can make resin matrix portion 5 is thermosetting resin or thermoplastic resin.In view of high-fire resistance
Or high-durability, it is desirable to for polyimide resin or silicone resin constituent.Silicone resin has toleration to UV degradation,
Can stably use under high temperature.Further, by making resin matrix portion 5 comprise fibre reinforced materials 6, optical semiconductor can be made to fill
Put by the thermostability of base station, intensity and ultra-violet resistance the most excellent.If the UV resistant of optical semiconductor device base station
Property excellent, then when holding the semiconductor wafer of release blue light or ultraviolet light, the life-span of optical semiconductor device can be made relatively
Long.As this fibre reinforced materials, it is possible to use such as glass fibre.
Further, resin matrix portion 5 is also as the insulator of the electric signal in and out of signal connecting element 3, and plays a role.
Further, in order to provide electrode portion, at least one side of signal connecting element 3 to expose to outside, can be such as Fig. 2 B institute
Show, optical semiconductor device base station 1 surface (above) side exposes, it is also possible to as shown in Figure 3 B, at optical semiconductor
The side, the back side (below) of device base station 1 is exposed.It is of course also possible to both sides are all exposed.
Further, as shown in Fig. 3 A, Fig. 3 C, signal connecting element 3 can have thickness less than exposing surface and two sides, the back side
Wafer holds the part of the thickness in portion 2, can fill above-mentioned resin matrix portion 5, improves mechanical strength and thermostability to play
Effect.It is of course also possible to as shown in Fig. 2 B, Fig. 3 D, the thickness of all signal connecting element 3 is respectively less than exposing surface and two sides, the back side
Wafer hold the thickness in portion 2.
The optical semiconductor device of the application of the invention base station 1, can manufacture a kind of both mechanical stability and height is durable
Property, the optical semiconductor device of high-cooling property.
As shown in Figure 4 A, the optical semiconductor device base station of the present invention, on the surface of semiconductor wafer side to be held
On not there is resin formation part, can serve as the base station of wafer on support plate (chip on board, COB), it is also possible to as figure
Shown in 4B, on the surface of semiconductor wafer side to be held, form the resin formation parts 7 such as such as reflecting mirror and use.
As shown in Figure 3 D, when forming this resin formation part 7, can be in a part for signal connecting element 3 and be formed without
Resin formation part, and make it expose, in order to the electrode portion that will provide to outside, it is also disposed at semiconductor wafer side to be held
On surface.
And, it is also possible to utilize resin formation part, cover the periphery being positioned at the crystal grain liner that above-mentioned wafer holds portion
A part.
Further, being preferably, when filling resin matrix portion, make optical semiconductor device base station is formed with each signal even
The thickness of the part meeting portion 3 holds the thickness in portion more than each wafer.The difference that can make these thickness is, such as tens microns left sides
Right.
If this kind of optical semiconductor device base station, then when shape on the surface at optical semiconductor device base station
When becoming the resin formation part such as reflecting mirror or lens, can suppress to produce on the surface of each signal connecting element resin burr.Such one
Come, the metal surface exposed can be made to maintain high-quality, and process without carrying out blasting treatment (blasting) or water spray
(water jet)。
Secondly, the manufacture method of the optical semiconductor device base station of the present invention is described.
First, preparing metal framework 4 as shown in Figure 5, it has multiple wafer and holds portion 2 and signal connecting element 3, and shape
Become signal connecting element 3 and have thickness less than the part that wafer holds the thickness in portion 2.Multiple wafers of this metal framework 4 hold
Portion 2 and signal connecting element 3, can be formed by such as etching metal plate.I.e., by the following method, multiple wafer is formed
Hold portion 2 and signal connecting element 3: the part that wafer holds portion 2 is not etched and becomes the part of signal connecting element 3, carries out
Half-etching (half etching), holds the part between portion 2 and signal connecting element 3 to the wafer in addition to linking part 8, carries out
Total eclipse carves (full etching).So, it is possible to easily prepare metallic plate by low cost.Furthermore, it is possible to the company of setting
Knot 8, it is to hold between portion 2 and each signal connecting element 3 for linking each wafer of metal framework 4 respectively.
Secondly, resin landfill is utilized to hold portion 2 and signal connecting element 3 except the multiple wafers having been formed on metal framework 4
Outside part, and be formed as tabular.Now, fill resin, make multiple wafer hold the surface in portion 2 and the back side is exposed simultaneously,
And at least one side of signal connecting element 3 exposes.
As the method for landfill resin, have such as, utilize the method that thermo-compressed, printing coating or metal die shape.This
Place, with reference to Fig. 6, illustrates thermal pressure welding method.
Furthermore, it is possible to as required, the wafer at metal framework 4 holds on the surface of portion 2 and signal connecting element 3 viscous in advance
The resin tapes such as patch Kapton Tape, suppress the produced resin burr when filling resin.
First, resin prepreg (prepreg sheet) ((a) in Fig. 6) is made.As the material of resin, permissible
Use thermosetting resin or thermoplastic resin.Further, resin can comprise fibre reinforced materials, so, can make
Making a kind of optical semiconductor device base station, its thermostability, intensity and ultra-violet resistance are the most excellent.Glass can be used
Fiber, as fibre reinforced materials.
When using the resin comprising fibre reinforced materials, it is the fibre reinforced materials about 50～70 μm by such as thickness
Impregnated in the solvent being dissolved with resin and substance, then, remove unnecessary solvent, be formed as lamellar.When use does not contains
During the resin of fibre reinforced materials, utilize squeegee (squeegee) or aerosol apparatus (spray), resin and interpolation will be dissolved with
The solvent of material, is spread evenly across such as the fluorine of politef (polytetrafluoro ethylene, PTFE) resin film
It is on thin film, and is formed as lamellar.
Secondly, the prepreg being made is put into stove so that it is be dried ((b) in Fig. 6).By dry half admittedly
Change sheet, carry out cutting ((c) in Fig. 6) according to the shape of the metal framework prepared.The prepreg this cut is chimeric or pastes
Together on metal framework ((d) in Fig. 6).At this time it is also possible to make multiple prepreg lamination.When using fiber reinforcement-containing
Resin time, be preferably, when making prepreg lamination, make the fibrous reinforcing material included in prepreg relative to that
This 90-degree rotation.So, the intensity of optical semiconductor device base station can be improved.Further, it is preferably, uses at lamination
The top and the bottom of prepreg there is no the prepreg of fibre reinforced materials, in order to resin is filled to metal framework
Discreet portions.
And, when when etching above-mentioned metal framework and when prepreg is cut according to metal framework, if at gold
Belong to positioning datum position on framework, owing to service behaviour will improve, the most preferred.
Secondly, make prepreg that is chimeric or that fit on metal framework and metal framework thermo-compressed, and be formed as tabular
((e) in Fig. 6).So, by utilizing hot pressing to fetch landfill resin, prepreg is made to soften, dissolve, and can be by
Resin positively fills the discreet portions in the gap to metal framework.Then, the metal framework of thermo-compressed landfill resin will be utilized
Cooling, the resin tape pasted on surface as required is peeled off, and is applied milled processed, resist coating process from the teeth outwards
Deng.So, optical semiconductor device base station is completed.
Be additionally, since the problem such as cutting precision of prepreg, cause being difficult between PN or crystal grain liner and electrode it
Between discreet portions on configure prepreg time, the lower thickness such as not having the prepreg of fibre reinforced materials can be made,
Or after thermo-compressed operation, it is set using the printing process of squeegee.
Secondly, the method illustrating to utilize printing coating to fill resin.
As required, wafer at metal framework 4 holds that to paste polyamides on portion 2 and the surface of signal connecting element 3 sub-in advance
The resin tapes such as amine adhesive tape.
First, by the part of the aqueous resin-coated landfill resin in metal framework.Now, in oriented benchmark position
Put or on identification mark and be not coated with.
Secondly, cool down after having made the metal framework thermmohardening of coating, as required surface is pasted
Resin tape is peeled off, and applies milled processed, resist coating process etc. from the teeth outwards.So, optical semiconductor is completed
Device base station.
Utilize the manufacture method of the optical semiconductor device base station of this kind of present invention, a kind of optical semiconductor can be manufactured
Device base station, it can utilize the wafer at exposing surface and the back side simultaneously to hold portion, effectively discharge semiconductor wafer and produced
Raw heat.Further, signal connecting element has thickness less than the part that wafer holds the thickness in portion, utilizes resin landfill to remove shape
Part outside becoming the multiple wafers on metal framework to hold portion and signal connecting element, and be formed as tabular, thus, it is possible to system
Make the optical semiconductor device base station that a kind of intensity is improved and warpage reduces.
Further, it is also possible to cut-out operation is set, less independent for optical semiconductor device base station is divided into
Unit.
In the manufacture method of the optical semiconductor device base station of the present invention, can be except the electricity of multiple signal connecting element
Pole portion and multiple wafers hold the semiconductor die to be held of the optical semiconductor device base station beyond the part exposed in portion
On the surface of sheet side, make ester moulding.At this point it is possible to utilize the clamping part exposed of metal die, and pass through compression mod
(transfer mold) fills moulding material and shapes.
So, the resin such as reflecting mirror or lens can be formed and becomes on the surface of optical semiconductor device base station
Shape portion, and the H.D optical semiconductor device base station that a kind of durability is further improved can be manufactured.
It is preferably, before ester moulding, on the surface of optical semiconductor device base station, applies argon (Ar) plasma
Body process or ultraviolet and ozone process etc., in order to improve the resin formation part adhesion to the surface of optical semiconductor device base station
Property.
Further, when utilizing resin to fill, during so that optical semiconductor device base station is formed as tabular, it is preferably, is filling out
When burying resin, the thickness of the part being formed with each signal connecting element of optical semiconductor device base station is made to hold portion than each wafer
Big such as tens microns of thickness.
So, when forming the resin formation part such as reflecting mirror or lens on the surface at optical semiconductor device base station
Time, pressure when utilizing metal die clamping is improved, and can suppress to produce on the surface of each signal connecting element resin burr.
Secondly, the optical semiconductor device of the present invention is described.
The optical semiconductor device of the present invention, is partly to lead at the optics utilizing the manufacture method of the invention described above to be fabricated by
Multiple wafers of body device base station hold in portion, are carried with semiconductor wafer respectively, and are split by cutting.
One example of the optical semiconductor device of the present invention shown in Fig. 7 A, Fig. 7 B.As shown in Figure 7 A, 7 B, the present invention
Optical semiconductor device 10, is to hold at metal wafer to be carried with semiconductor wafer 11 in portion, and is to utilize such as gold
Projection (gold bump), gold stannum (Au-Sn) solder, scolding tin, the adhesion of viscous brilliant material (die bond) promote material, adhere to
Wafer holds in portion.Semiconductor wafer 11 is electrically connected with by bonding wire (bonding wire) 12 with 2 signal connecting element 3.
As shown in Figure 7 B, on the side being carried with semiconductor wafer 11, being formed with sealing 13, signal connecting element 3 is partly led at optics
Expose on side below body device 10, thus form electrode portion.Such as silicone resin can be used as sealing, it is also possible to
Add substance.
It is carried with the metal wafer of semiconductor wafer 11 and holds the surface in portion 2 and the back side is exposed, semiconductor die simultaneously
Heat produced by sheet 11 can hold the exposed surface in portion 2 from wafer and effectively discharge to outside.Further, signal connecting element 3 has
There is thickness to be less than the part that wafer holds the thickness in portion 2, utilize resin landfill in addition to wafer holds portion 2 and signal connecting element 3
Part, and be formed as tabular.So, mechanical strength and thermostability improve, and warpage reduces.
So, the optical semiconductor device of the present invention is both mechanical stability and has high-durability, high-cooling property.
Fig. 8 is the figure of another example of the optical semiconductor device illustrating the present invention.As shown in Figure 8, sealing 13 is formed as
Lenticular.Further, reflecting mirror 14 is formed as surrounding optical semiconductor wafer 11.This reflecting mirror 14, is preferably used containing titanium oxide
Etc. the silicone constituent of substance, and the light received by optical semiconductor wafer 11 or discharge had reflexive.By making
Use silicone constituent, it is possible to achieve high-durability, it is possible to the light discharged optical semiconductor wafer 11 for a long time carries out light
Distribution.
Fig. 9 is the figure of the another example of the optical semiconductor device illustrating the present invention.As it is shown in figure 9, this optical semiconductor dress
Put used semiconductor wafer to be not electrically connected with as described above by bonding wire, but be directly electrically connected at signal and connect
The flip chip (flip chip) in portion 3.Wafer holds the middle body in portion 2 and has breach, and in the part of breach, landfill has tree
Fat, thus form resin matrix portion.At this time it is also possible to by heat produced by flip chip, hold, from wafer, the table that portion 2 exposes
Face and the back side substantially effectively discharge.
And, sealing 13 can also use such as glass material.Further, as it is shown in figure 9, in semiconductor wafer and sealing
It is provided with space between portion, this space can be filled up the gases such as air, argon and nitrogen.
The optical semiconductor device base station of the present invention and use the light that this optical semiconductor device base station is fabricated by
Learn semiconductor device and can apply in various field, it is adaptable to following field, such as: large area display or television equipment
Display means backlight, for projection illuminator or general lighting in flood lighting or spotlighting (spot
Light) etc..
[embodiment]
Hereinafter, further illustrate the present invention by embodiments of the invention and comparative example, but the present invention is not limited to
These embodiments.
(embodiment)
According to the manufacture method of the optical semiconductor device base station of the present invention, the light of the manufacture present invention as shown in Figure 1
Learn semiconductor device base station.
Use copper alloy (TAMAC194, Rhizoma Sparganii Shen Tong limited company (Mitsubishi Shindoh of iron content (Fe)
Co., Ltd.) manufacture) as metal framework, use the silicone resin that substance is titanium oxide comprised, female as resin
Body.In resin matrix portion, comprise glass fibre, as fibre reinforced materials.
First, the metallic plate of the TAMAC194 that thickness is 0.5mm is cut into A4 size, and utilizes etching to prepare such as Fig. 5
Shown metal framework.Now, the wafer portion of holding is not etched, using side below the part of signal connecting element half erosion
Carving 0.3mm, making thickness is 0.2mm.Now, laser microscope is used to measure etch quantity.
Secondly, prepreg is made, in order in metal framework, fill resin.It is the glass fibre about 70 μm by thickness
Impregnated in the solvent of the substance being dissolved with silicone resin and titanium oxide, then, remove unnecessary solvent, and be formed as sheet
Shape.In addition, use fluorine system thin film (PTFE resin thin film), make the prepreg without glass fibre.
These prepregs being made are put into the stove of 100 DEG C, makes solvent fully volatilize and be dried.
Secondly, the prepreg that will be made, cuts according to the shape of metal framework, and is embedded in utilization etching legal system
The through-Penetration portion of metal framework that becomes or fit in the recess of side below signal connecting element.Now, lamination 3 contains glass fibre
Prepreg, and at upper and lower lamination without the prepreg of glass fibre.Herein, the most solid of glass fibre is contained when lamination 3
When changing sheet, making the glass layer of prepreg and the glass layer of upper and lower prepreg of centre is the angle of 90 °.
Then, 180 DEG C, 10Mpa, under conditions of 120 hours, prepreg and metal framework are carried out thermo-compressed, cold
But it is made to harden.Now, the thickness being formed with the part of signal connecting element is made to hold the big 0.001mm of thickness in portion than wafer.So
After, utilize screen printing (screen printing), painting erosion resistant agent on the surface of base station, and just cut into 100mm
Square.Further, utilize compression mod, on the surface of optical semiconductor device base station, make reflecting mirror shape, owing to making to be formed with
The thickness of the part of signal connecting element holds the thickness in portion more than wafer, is therefore possible to prevent the resin on the surface of signal connecting element
Burr.
Utilize the method according to JIS A 1412-2, measure and evaluate the optical semiconductor device base station of so manufacture
Wafer holds the thermal conductivity of the base station thickness direction in portion.
Result is shown in table 1.As shown in table 1, thermal conductivity higher than aftermentioned comparative example as a result, it is possible to efficiently discharge semiconductor die
Heat produced by sheet.And, it is known that compared to the thermal conductivity of copper coin in reference, result is identical.Reason is, metal framework institute
The thermal conductivity of the material (TAMAC194) used is close to the thermal conductivity of copper.
Further, utilize the method according to JIS Z 8722, measure and evaluate the optics utilizing embodiment to be fabricated by and partly lead
The wafer of body device base station holds the reflectance in portion.By comparing initial reflectance and testing under hot and humid environment
Rear measured reflectance, is evaluated.Herein, by 85 DEG C, 85% time, take care of base station 1000 hours, carry out high temperature
High humidity environment is tested.
Result is shown in table 2.As shown in table 2, the value of initial reflectance is higher, initial reflectance with test after reflectance several
There is no difference, keep high reflectance.On the other hand, in aftermentioned comparative example, after the initial reflectance of AlN substrate, test
Reflectance is the most relatively low, although the initial reflectance of FR-4 (epoxy impregnation glass fibre basal plate) is higher, but the reflection after test
Rate declines to a great extent.
Secondly, utilize the method according to JIS C 8152, measure and evaluate light flux values initial value and with above-mentioned phase
With the value after test under the hot and humid environment of condition.Wherein, it is 100 little respectively to the test period under hot and humid environment
Time, the situation of 500 hours and 1000 hours is evaluated.Herein, about light flux values, the initial stage light flux values in embodiment
It is 100%.
Result is shown in table 3.As shown in table 3, it is known that under hot and humid environment test after light flux values from initial stage light
The decline degree of amount of flux is the least, can maintain the light flux values above on an equal basis with the ceramic AlN substrate in aftermentioned comparative example.
So, utilize the optical semiconductor device base station that the manufacture method of the present invention is fabricated by thermal diffusivity,
High temperature durability is excellent, even if under hot and humid environment, uses thus optical semiconductor device base station to be fabricated by
Optical semiconductor device, it is also possible to inhibitory reflex rate or the decline of light flux values.
(comparative example)
Manufacture common AlN (aluminium nitride) substrate and FR-4 substrate (makes epoxy resin penetrate in the cloth of glass fibre, carries out
The substrate that thermmohardening processes), and not there is the metal framework of the present invention and the compound abutment structure of resin, and as embodiment
Ground, evaluates thermal conductivity, reflectance and light flux values.
The result of thermal conductivity is shown in table 1.As shown in table 1, it is known that compared to embodiment, thermal conductivity is relatively low, semiconductor wafer
The release efficiency of produced heat deteriorates.
The result of reflectance is shown in table 2.Reflectance as shown in table 2, in AlN substrate, after initial reflectance value, test
All deteriorate, in FR-4 substrate, although initial reflectance value is identical with embodiment, but declines to a great extent after experiment.
The result of light flux values is shown in table 3.As shown in table 3, can maintain in an embodiment pottery AlN substrate equal more than
Light flux values.In FR-4 substrate, As time goes on, light flux values significantly deteriorates.
[table 1]
[table 2]
[table 3]
It addition, the present invention is not limited to described embodiment.Described embodiment, for illustrating, has the power with the present invention
The structure that profit technological thought described in claim is substantially identical, and play the technical scheme of identical action effect, it is all contained in this
In the technical scope of invention.
Claims (18)
1. a manufacture method for optical semiconductor device base station, is the method manufacturing optical semiconductor device base station, institute
State optical semiconductor device base station there is multiple wafer to hold portion, be used for holding semiconductor wafer；And, multiple signals connect
Portion, is electrically connected at the aforementioned semiconductor wafer held, and provides electrode portion to outside；Wherein, described optical semiconductor dress
Put and be characterized by following operation by the manufacture method of base station:
Preparing the operation of metal framework, described metal framework is formed with aforesaid plurality of wafer and holds portion and aforementioned signal connecting portion,
This signal connecting element has thickness less than the part that the plurality of wafer holds the thickness in portion；And,
Manufacture the operation of aforementioned optical semiconductor device base station, the while of so that aforesaid plurality of wafer holds surface and the back side in portion
Expose, and the mode that at least one side of aforementioned signal connecting portion is exposed, utilize resin landfill except having been formed on aforementioned metal framework
On aforesaid plurality of wafer hold the part outside portion and signal connecting element, and described optical semiconductor device base station is formed
For tabular,
Utilizing aforementioned resin to fill, making aforementioned optical semiconductor device base station be formed as in the operation of tabular, so that aforementioned
The thickness of the part being formed with aforementioned each signal connecting element of optical semiconductor device base station holds portion more than aforementioned each wafer
The mode of thickness, fill aforementioned resin.
2. the manufacture method of optical semiconductor device base station as claimed in claim 1, wherein, is preparing aforementioned metal framework
Operation in, by etching metal plate, and form aforesaid plurality of wafer and hold portion and signal connecting element.
3. the manufacture method of optical semiconductor device base station as claimed in claim 1, wherein, has following operation: removing
The electrode portion of aforesaid plurality of signal connecting element and aforesaid plurality of wafer hold the aforementioned optical beyond the part exposed in portion half
On the surface of the aforesaid semiconductor wafer side to be held of conductor device base station, carry out ester moulding.
4. the manufacture method of optical semiconductor device base station as claimed in claim 2, wherein, has following operation: removing
The electrode portion of aforesaid plurality of signal connecting element and aforesaid plurality of wafer hold the aforementioned optical beyond the part exposed in portion half
On the surface of the aforesaid semiconductor wafer side to be held of conductor device base station, carry out ester moulding.
5. the manufacture method of the optical semiconductor device base station as described in any one in claim 1 to claim 4, its
In, utilizing aforementioned resin to fill, making aforementioned optical semiconductor device base station be formed as, in the operation of tabular, utilizing hot pressing
Connect, print coating or metal die shaping, fill aforementioned resin.
6. the manufacture method of the optical semiconductor device base station as described in any one in claim 1 to claim 4, its
In, the material of aforementioned landfill resin is set to thermosetting resin or thermoplastic resin.
7. the manufacture method of optical semiconductor device base station as claimed in claim 5, wherein, by the material of aforementioned landfill resin
Material is set to thermosetting resin or thermoplastic resin.
8. the manufacture method of the optical semiconductor device base station as described in any one in claim 1 to claim 4, its
In, aforementioned landfill resin comprises fibre reinforced materials.
9. the manufacture method of optical semiconductor device base station as claimed in claim 8, wherein, uses glass fibre, as
Fibre reinforced materials included in aforementioned landfill resin.
10. the manufacture method of the optical semiconductor device base station as described in any one in claim 1 to claim 4,
Wherein, utilizing aforementioned resin to fill to form tabular, manufacturing operation follow-up of aforementioned optical semiconductor device base station
In operation, implement aforementioned base station surface to grind and/or the surface process of resist coating.
11. 1 kinds of optical semiconductor device base stations, have multiple wafer and hold portion, be used for holding semiconductor wafer；And, multiple
Signal connecting element, is electrically connected at the aforementioned semiconductor wafer held, and provides electrode portion to outside；Wherein, described optics
Semiconductor device base station is characterised by:
Being made up of with resin matrix portion metal framework, wherein, described metal framework is formed with aforesaid plurality of wafer and holds portion and tool
Thickness is had to be less than the aforementioned signal connecting portion of part that the plurality of wafer holds the thickness in portion；Described resin matrix portion, be so that
Aforesaid plurality of wafer holds the surface in portion and the back side is exposed simultaneously, and the mode that at least one side of aforementioned signal connecting portion is exposed,
Fill the part extremely in addition to the aforesaid plurality of wafer having been formed on aforementioned metal framework holds portion and signal connecting element, and institute
State optical semiconductor device base station and be formed as tabular,
So that the thickness of the part being formed with aforementioned each signal connecting element of aforementioned optical semiconductor device base station is more than aforementioned
Each wafer holds the mode of the thickness in portion, and landfill aforementioned resin parent portion forms.
12. optical semiconductor device base stations as claimed in claim 11, wherein, except the electricity of aforesaid plurality of signal connecting element
Pole portion and aforesaid plurality of wafer hold holding of the aforementioned optical semiconductor device base station beyond the part exposed in portion
On the surface of aforesaid semiconductor wafer side, there is resin formation part.
The 13. optical semiconductor device base stations as described in claim 11 or claim 12, wherein, aforementioned resin parent portion
Material be thermosetting resin or thermoplastic resin.
The 14. optical semiconductor device base stations as described in claim 11 or claim 12, wherein, aforementioned resin parent portion
Comprise fibre reinforced materials.
15. optical semiconductor device base stations as claimed in claim 13, wherein, aforementioned resin parent portion comprises fiber reinforcement
Material.
16. optical semiconductor device base stations as claimed in claim 15, wherein, the fiber that aforementioned resin parent portion is comprised
Reinforcing material is glass fibre.
17. 1 kinds of optical semiconductor devices, are characterised by, at the optical semiconductor as described in claim 11 or claim 12
The aforesaid plurality of wafer of device base station holds in portion, is carried with semiconductor wafer respectively, and is split to form by cutting.
18. 1 kinds of optical semiconductor devices, are characterised by, at optical semiconductor device base station as claimed in claim 16
Aforesaid plurality of wafer holds in portion, is carried with semiconductor wafer respectively, and is split to form by cutting.
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| JP2011273911A JP5795251B2 (en) | 2011-12-14 | 2011-12-14 | Optical semiconductor device base, method for manufacturing the same, and optical semiconductor device |
| JP2011-273911 | 2011-12-14 |
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| JP5795251B2 (en) * | 2011-12-14 | 2015-10-14 | 信越化学工業株式会社 | Optical semiconductor device base, method for manufacturing the same, and optical semiconductor device |
| US20170317250A1 (en) * | 2014-10-28 | 2017-11-02 | Sharp Kabushiki Kaisha | Substrate, light-emitting device, and illuminating apparatus |
| JP6246879B1 (en) * | 2016-09-20 | 2017-12-13 | 株式会社東芝 | Optical semiconductor module and manufacturing method thereof |
| CN106981557A (en) * | 2017-04-07 | 2017-07-25 | 光创空间（深圳）技术有限公司 | The method for packing and encapsulating structure of a kind of optoelectronic semiconductor chip |
| JP7089167B2 (en) | 2018-04-23 | 2022-06-22 | 日亜化学工業株式会社 | Light emitting device |
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| CN101971375A (en) * | 2008-05-28 | 2011-02-09 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor component and printed circuit board |
| CN101971353A (en) * | 2008-04-17 | 2011-02-09 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for producing an optoelectronic component |
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| DE102007060206A1 (en) * | 2007-12-14 | 2009-06-18 | Osram Opto Semiconductors Gmbh | Arrangement with at least one optoelectronic semiconductor component |
| JP5304431B2 (en) * | 2009-05-19 | 2013-10-02 | 凸版印刷株式会社 | Lead frame, manufacturing method thereof, and semiconductor light emitting device using the same |
| JP5381563B2 (en) * | 2009-09-29 | 2014-01-08 | 凸版印刷株式会社 | Method for manufacturing lead frame substrate for light emitting device |
| JP4747265B2 (en) * | 2009-11-12 | 2011-08-17 | 電気化学工業株式会社 | Light-emitting element mounting substrate and manufacturing method thereof |
| JP5795251B2 (en) | 2011-12-14 | 2015-10-14 | 信越化学工業株式会社 | Optical semiconductor device base, method for manufacturing the same, and optical semiconductor device |
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| CN101971353A (en) * | 2008-04-17 | 2011-02-09 | 奥斯兰姆奥普托半导体有限责任公司 | Optoelectronic component and method for producing an optoelectronic component |
| CN101971375A (en) * | 2008-05-28 | 2011-02-09 | 欧司朗光电半导体有限公司 | Optoelectronic semiconductor component and printed circuit board |
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| JP2013125867A (en) | 2013-06-24 |
| KR20130069437A (en) | 2013-06-26 |
| TWI542041B (en) | 2016-07-11 |
| JP5795251B2 (en) | 2015-10-14 |
| TW201340411A (en) | 2013-10-01 |
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