CN103066192A - Semiconductor illuminating light source and method of manufacturing the same and semiconductor illuminating chip - Google Patents

Semiconductor illuminating light source and method of manufacturing the same and semiconductor illuminating chip Download PDF

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CN103066192A
CN103066192A CN2013100086385A CN201310008638A CN103066192A CN 103066192 A CN103066192 A CN 103066192A CN 2013100086385 A CN2013100086385 A CN 2013100086385A CN 201310008638 A CN201310008638 A CN 201310008638A CN 103066192 A CN103066192 A CN 103066192A
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substrate
weld pad
pad
semiconductor
light emitting
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CN103066192B (en
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李刚
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SHENZHEN DADAO SEMICONDUCTOR CO., LTD.
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李刚
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805—Shape
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Abstract

The invention relates to a semiconductor illuminating light source and a method of manufacturing the same and a semiconductor illuminating chip. The semiconductor illuminating light source comprises a base plate, a first welding tray connected with a first welding pad and the base plate, a second welding tray connected with a second welding pad. A first surface of the base plate is provided with a conducting circuit which comprises a first welding pad and a second welding pad which is insulative from the first welding pad. At least one semiconductor lamination is arranged on the surface of the first welding pad. A metal layer is arranged on the surface of a first conducting layer surface of a semiconductor lamination. The surface of the metal layer is tightly adhered to the surface of the first welding pad in a connected mode. An electrical current expansion layer is arranged on the surface of a second conducting layer surface and is in conductive connection with the second welding pad or another first welding pad. A seal packing body arranged on the first surface of the base plate packs the semiconductor lamination, the corresponding first welding pad, the corresponding welding pad and the corresponding electrical expansion layer in a sealed mode. The first welding tray and the second welding tray are arranged on external sides of the seal body. The semiconductor illuminating light source is simple in structure, short in manufacture procedure, capable of greatly improving comprehensive rate of qualified products and capable of reducing manufacture cost.

Description

Semiconductor light emitting light source and make the method for this light source and semiconductor luminous chip
Technical field
The present invention relates to a kind of semiconductor light emitting light source, comprise the lamp plate that uses in LED, COB, the semiconductor lamp, lamp bar, lamppost etc., further relate to a kind of semiconductor light emitting light-source structure and manufacture method thereof.
Background technology
Along with the lifting of semiconductor light emitting efficient, the decline of manufacturing cost and the raising in useful life, its range of application has contained the fields such as demonstration, backlight and illumination.
As shown in Figure 1, be the structural representation of existing a kind of LED, comprise base plate for packaging 1, p weld pad 2, metal level 3, supporting substrate 4, p-type electric-conducting layer 5, luminescent layer 6, N-shaped conductive layer 7, current extending 8, n electrode 9, interconnecting lead 10, fluorescence coating 10a, n weld pad 11, p pad 13a, connection metal 12a, n pad 13b, connection metal 12b, packaging body 14 and die bond layer 15 etc.
P-type electric-conducting layer 5, luminescent layer 6, N-shaped conductive layer 7 forms usually said semiconductor laminated; Described semiconductor laminated and metal level 3, supporting substrate 4, current extending 8, n electrode 9 form usually said semiconductor luminous chip; Described semiconductor luminous chip and base plate for packaging 1, p weld pad 2, interconnecting lead 10, fluorescence coating 10a, n weld pad 11, p pad 13a, connection metal 12a, n pad 13b, connection metal 12b, packaging body 14 and die bond layer 15 form usually said LED(and also are referred to as light emitting semiconductor device).
In the present semiconductor lighting industry division of labor, make semiconductor luminous chip by chip enterprise, enterprise makes the light emitting semiconductor devices such as LED shown in Figure 1 and COB by encapsulation, and the light emitting semiconductor device of by light fixture enterprise encapsulation enterprise being made at last is applied in the lamp plate, lamp bar, lamppost of various lightings and goes.
The manufacture process of semiconductor luminous chip shown in Figure 1 generally includes: at sapphire, carborundum or silicon epitaxy substrate surface (not shown) epitaxial growth semiconductor light emitting lamination, comprise GaN/InGaN based semiconductor light emitting lamination, AlInGaP based semiconductor light emitting lamination, GaN/AlGaN based semiconductor light emitting lamination etc.; Then, at the exposed p-type electric-conducting layer 5 surface preparation metal level 3 of whole epitaxial wafer; Stick on described supporting substrate 4(ground floor substrate with semiconductor laminated together with epitaxial substrate by described metal level 3) surface (for the first time die bond operation); Then, the method for chemical corrosion or chemical stripping is removed the monoblock epitaxial substrate behind employing laser lift-off, the grinding attenuate; Then, the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the epitaxial substrate, expose the N-shaped conductive layer 7 for the preparation of current extending, and structuring N-shaped conductive layer 7 surfaces, make it to form taper rough surface or convex-concave surface; At the described current extending 8 of described structuring N-shaped conductive layer 7 surface preparations, n electrode 9; Cutting semiconductor luminous chip that described supporting substrate 4 obtains separating offers encapsulation enterprise and uses.
The diameter of epitaxial wafer is 2 cun and 4 cun at present.As previously mentioned, prior art is first whole epitaxial wafer to be pasted described supporting substrate 4 surfaces, after finishing chip technology, cut described supporting substrate 4 again and obtain semiconductor luminous chip, the epitaxial substrate removal method of this common employing exists serious technical bottleneck to be difficult to solve all the time.As when adopting laser-stripping method, epitaxial substrate and semiconductor laminated between the vapour that produces, the vapour of middle section particularly, be difficult to be drained fast and effectively by the micro gap between semiconductor laminated and the substrate, the gas expansion that causes and localized hyperthermia and thermal stress thereof can cause whole semiconductor laminated breaking.As when adopting chemical peeling, fresh corrosive liquid and the corrosion product of generation are difficult to mutually exchange and flow by the micro gap between semiconductor laminated and the substrate, the thickness in corrosion slit radially is difficult to control evenly, though the means such as heating, ultrasonic vibration can improve liquidity, and can cause semiconductor laminated breaking.The method of chemical corrosion behind the employing grinding attenuate, although can solve the problem that micro gap causes between semiconductor laminated and the substrate, but the THICKNESS CONTROL of grinding attenuate particularly uniformity control is very difficult, and too thin meeting causes semiconductor laminated breaking, and too thick meeting causes the chemical corrosion time tediously long etc.Described problem is along with the continuous increase of epitaxial wafer diameter, and it is severeer to become, and causes manufacturing process complexity, low, the high in cost of production problem of yield.
In the manufacture process of LED shown in Figure 1, further comprise: prepare the LED supporting substrate 1(second layer substrate that includes p weld pad 2, n weld pad 11, connection metal 12a, connection metal 12b, n pad 13b, p pad 13a, die bond layer 15 shown in Figure 1); The semiconductor luminous chip that is comprised of metal level 3, supporting substrate 4, p-type electric-conducting layer 5, luminescent layer 6, N-shaped conductive layer 7, current extending 8, n electrode 9 is fixed on (for the second time die bond operation) on the supporting substrate 1; Finish interconnecting lead 10, semiconductor luminous chip n electrode 9 is conducted electricity mutually with n weld pad 11 be connected (usually said bonding wire or routing technique); Apply fluorescence coating 10a around semiconductor laminated, encapsulating curing obtains obtaining usually said LED behind the packaging body 14 again.
Go if described LED is applied in the semiconductor lamp, in semiconductor lamp enterprise, need to be with the method for Reflow Soldering or wave-soldering, described LED is welded on the PCB substrate (the 3rd laminar substrate and for the third time die bond operation) and goes, be made into lamp plate, lamp bar or the lamppost of various sizes shape.
Obviously easily see, described semiconductor light emitting is stacked in different enterprises and has experienced different die bond operations three times, three layers of different substrate have been used, finally just be applied in the semiconductor lamp and go, not only manufacturing process is long, process procedure is many, waste a large amount of raw and auxiliary materials, relate to the semiconductor manufacturing equipment that uses the numerous complicated costliness, and overall yield is low, it is final so that semiconductor luminous chip and semiconductor light emitting light source comprise the lamp plate in above-described light emitting semiconductor device (LED and COB) and the semiconductor lamp, the lamp bar, the manufacturing cost of lamppost etc. is high, has limited to their range of application.
Further, long from the semiconductor laminated heat conduction approach that experiences to base plate for packaging 1 basal surface as shown in Figure 1, comprise supporting substrate 4, metal level 3, die bond layer 15, p weld pad 2 and base plate for packaging 1.The approach of process is long, the interface is many, is unfavorable for semiconductor laminated heat radiation, thereby has influence on the light efficiency of light source, also can cause light decay to accelerate the problems such as shortening in useful life.
Obviously, there be defective and the deficiency of essence in the manufacture process of semiconductor luminous chip itself and existing semiconductor light emitting light source in its structure and manufacture method.
Summary of the invention
The technical problem to be solved in the present invention is, a kind of semiconductor light emitting light source that can shorten manufacturing process, reduce process procedure is provided.
Another technical problem that the present invention will solve is, a kind of semiconductor light emitting light source manufacture method that can shorten manufacturing process, reduce process procedure is provided.
Another technical problem that the present invention will solve is, a kind of manufacture method that can simplify technique, promote the semiconductor luminous chip of yield is provided.
The technical solution adopted for the present invention to solve the technical problems is: construct a kind of semiconductor light emitting light source, comprise a substrate, described substrate has first surface and second surface; First surface at described substrate is provided with at least one conducting channel, and described conducting channel comprises at least one the first weld pad and at least one the second weld pad; Described the first weld pad and the second weld pad are insulated from each other, and described substrate has first pad that is connected with described the first weld pad at least, have second pad that is connected with described the second weld pad at least;
At least be provided with the semiconductor lamination on described the first weld pad surface, described semiconductor laminated one first conductive layer, a luminescent layer and one second conductive layer of comprising at least; Described the first conductive layer surface has a metal level, and described metal level directly contacts with described the first conductive layer or between described metal level and described the first conductive layer a reflector and/or a contact layer arranged; Described layer on surface of metal is close to described the first weld pad surface and is connected; Described the second conductive layer surface has a current extending; Described current extending is connected with described the second weld pad or another the first weld pad conduction, perhaps, is provided with at least one second electrode on described current extending surface, is connected with described the second weld pad or described another the first weld pad conduction by described the second electrode again;
Described semiconductor laminated and corresponding described the first weld pad, the second weld pad and current extending, or corresponding described the first weld pad, the second weld pad, current extending and the second electrode be by a packaging body institute sealed envelope that is arranged on described substrate first surface, and described the first pad and the second pad are positioned at the described substrate first surface in the described packaging body outside, described substrate side surfaces and/or described substrate second surface.
Preferably, described semiconductor laminated side is all around wrapped up by an insulating barrier.
Preferably, described the first pad is arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces, and by being arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces and/or running through described packaging body and/or run through the first interconnecting metal of described substrate, be connected with described the first weld pad conduction; Perhaps, described the first pad is to pass the first needle-like pad that described substrate is connected with described the first weld pad conduction;
Described the second pad is arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces, and by being arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces and/or running through described packaging body and/or run through the second interconnecting metal of described substrate, be connected with described the second weld pad conduction; Perhaps, described the second pad is to pass the second needle-like pad that described substrate is connected with described the second weld pad conduction.
Preferably, when the described substrate that described the second weld pad, the second pad and the second interconnecting metal are set has conductive characteristic, between described the second weld pad, the second pad and the second interconnecting metal and described substrate, be provided with a substrate insulating layer; When the described substrate that described the first weld pad, the first pad and the first interconnecting metal are set has conductive characteristic, between described the first weld pad, the first pad and the first interconnecting metal and described substrate, be provided with a substrate insulating layer or be set directly on the described substrate.
Preferably, described current extending is connected with described the second weld pad or described another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead; Perhaps,
Have one second electrode at least on described current extending surface, described the second electrode is connected with described the second weld pad or described another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead.
Preferably, described substrate first surface is smooth planar surface or the smooth surface that comprises concavo-convex platform.
Preferably, described packaging body comprises embedding body, preform lens or preform lampshade;
Described embedding body is by the casting glue solidified forming; Described casting glue comprises one or more in epoxy resin, silicon rubber, silicones, the epoxy resin that is mixed with fluorescent material and/or diffusant, silicon rubber, the silicones; During described embedding body forming mode comprises from shaping, pressing mold shaping, casting, filling is shaped in the cofferdam one or more;
Described preform lens and preform lampshade comprise one or more in epoxy resin, silicon rubber, silicones, PMMA, PC, glass, transparent ceramic, the epoxy resin that is mixed with fluorescent material and/or diffusant, silicon rubber, silicones, PMMA, PC, glass, the transparent ceramic.
The present invention also provides a kind of method of making above-mentioned semiconductor light emitting light source, may further comprise the steps at least:
S1: preparation semiconductor light emitting crystal grain: at the extension substrate surface, epitaxial growth is described semiconductor laminated successively by the order of the second conductive layer, luminescent layer, the first conductive layer; The first conductive layer surface that is exposed with the whole epitaxial wafer of described metal level uniform fold; After the described epitaxial substrate of thinning back side, cut and/or the described epitaxial wafer that bursts apart becomes the semiconductor light emitting crystal grain of some separation; Described semiconductor light emitting crystal grain comprises described epitaxial substrate, described semiconductor laminated and described metal level;
S2: the preparation substrate: the first surface at substrate prepares the corresponding conducting channel of one or more semiconductor light emitting light sources, perhaps, after the first surface of the described substrate of tool conductive characteristic prepares described substrate insulating layer, prepare the corresponding conducting channel of one or several semiconductor light emitting light sources at described surface of insulating layer again; Described conducting channel comprises at least one the first weld pad and at least one the second weld pad; At least one the first pad that preparation is connected with at least one the first weld pad is with at least one the second pad that is connected with at least one the second weld pad;
S3: connect semiconductor light emitting crystal grain and substrate: described semiconductor light emitting crystal grain is placed on the first weld pad surface, described layer on surface of metal and described the first weld pad surface are close to mutually, and the strong bonded conducting; The associated methods on described layer on surface of metal and described the first weld pad surface comprises ultrasonic bonding, eutectic weldering, Reflow Soldering, soldering, one or more methods under pressurization or heating pressurized conditions in the bonding;
S4: remove substrate: behind conducting channel, pad and the semiconductor laminated side that protection is exposed, remove the epitaxial substrate on the described semiconductor light emitting crystal grain; The method of removing epitaxial substrate on the described semiconductor light emitting crystal grain comprises one or more in chemical stripping, chemical corrosion, the polishing of attenuate post-chemical mechanical, the laser lift-off;
S5: the preparation current extending: the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the described epitaxial substrate, expose the second conductive layer for the preparation of current extending, and structuring the second conductive layer surface, make it to form taper rough surface or convex-concave surface; Cover described current extending at described structuring the second conductive layer surface;
S6: be electrically connected described current extending and be connected weld pad: described current extending is connected with described the second weld pad or another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead; Perhaps, behind at least one the second electrode of described current extending surface preparation, be connected with described the second weld pad or described another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead by described the second electrode again; Described interconnect conductive layers is the thin metal layer by sputter or evaporation or chemical plating or electroplating deposition, and described interconnecting lead is the wire by ultrasonic bonding;
S7: preparation packaging body: adopt comprise following any: a: around described the first semiconductor laminated and corresponding weld pad, the second weld pad, current extending or current extending and the second electrode drop or coating casting glue, by the surface tension of casting glue from be shaped or pressing mold be shaped after curing obtain the embedding body; B: preform lens or preform lampshade are arranged on described substrate first surface, its opening parcel forms the first semiconductor laminated and corresponding weld pad, the second weld pad, current extending or current extending and the second electrode, interconnect conductive layers or the interconnecting lead of single semiconductor light emitting light source, and seals the junction surface between described preform lens or preform lampshade and the described substrate first surface; Inject casting glue in the cavity that between described preform lens or preform lampshade and described substrate first surface, forms or inject the casting glue that is mixed with fluorescent material and/or diffusant; C: embedding body shaping template is placed on described substrate first surface, in the template cavity, injects casting glue or be mixed with fluorescent material and/or the casting glue of diffusant, slough embedding body shaping template after solidifying to form the embedding body; D: form single semiconductor light emitting light source semiconductor laminated, and corresponding the first weld pad, the second weld pad, current extending or current extending and the second electrode, interconnect conductive layers or interconnecting lead around the cofferdam is set after, in the cofferdam, fill casting glue or fill the casting glue that is mixed with fluorescent material and/or diffusant, solidify to form the embedding body;
S8: preparation semiconductor light emitting light source: along the line of cut cutting and/or the substrate that contains a plurality of semiconductor light emitting light sources of the bursting apart semiconductor light emitting light source that obtains separating.
Preferably, before S7 prepared packaging body, it was described semiconductor laminated to use the casting glue that is mixed with fluorescent material to wrap up first, formed fluorescence coating after solidifying.
The present invention also provides a kind of method of making semiconductor luminous chip, may further comprise the steps at least:
S1: preparation semiconductor light emitting crystal grain: at the extension substrate surface, by the order of the second conductive layer, luminescent layer, the first conductive layer successively epitaxial growth semiconductor lamination; The first conductive layer surface that is exposed with the whole epitaxial wafer of a metal level uniform fold; Described metal level directly contacts with described the first conductive layer or between described metal level and described the first conductive layer a reflector and/or a contact layer is arranged;
S2: after the described epitaxial substrate of thinning back side, cut and/or the described epitaxial wafer that bursts apart becomes the semiconductor light emitting crystal grain of some separation; Described semiconductor light emitting crystal grain comprises described epitaxial substrate, described semiconductor laminated and described metal level;
S3: preparation substrate: prepare the corresponding conducting channel of one or more semiconductor luminous chips at the first surface of substrate or after the first surface of described substrate arranges an insulating barrier; Described conducting channel comprises at least one the first weld pad and at least one the first pad that is connected with at least one the first weld pad; Described substrate first surface is smooth planar surface or the smooth surface that comprises concavo-convex platform;
S4: connect semiconductor light emitting crystal grain and substrate: described semiconductor light emitting crystal grain is placed on the first weld pad surface, described layer on surface of metal and described the first weld pad surface are close to mutually, and the strong bonded conducting; The associated methods on described layer on surface of metal and described the first weld pad surface comprises ultrasonic bonding, eutectic weldering, Reflow Soldering, soldering, one or more methods under pressurization or heating pressurized conditions in the bonding;
S5: remove substrate: after the conducting channel and semiconductor laminated side that protection is exposed, remove the epitaxial substrate on the described semiconductor light emitting crystal grain; The method of removing epitaxial substrate on the described semiconductor light emitting crystal grain comprises one or more in chemical stripping, chemical corrosion, the polishing of attenuate post-chemical mechanical, the laser lift-off;
S6: the preparation current extending: the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the described epitaxial substrate, expose the second conductive layer for the preparation of current extending, and structuring the second conductive layer surface, make it to form taper rough surface or convex-concave surface; Cover a current extending at described structuring the second conductive layer surface; At at least one the second electrode of described current extending surface preparation;
S7: preparation semiconductor luminous chip: along line of cut cutting and/or the substrate that contains a plurality of semiconductor luminous chips of the bursting apart semiconductor luminous chip that obtains separating.
Implement the present invention and have following beneficial effect: semiconductor light emitting light source of the present invention can be used as lamp plate, the lamp bar in light emitting semiconductor device (comprising LED and COB etc.) and the semiconductor lamp, lamppost etc., have simple in structure, highly versatile, widely used characteristics; Can significantly shorten the manufacturing process from epitaxial wafer to the semiconductor light emitting light source, reduce process procedure; Chip, encapsulation and light fixture manufacturing process and operation organic combination are integrated, can not only significantly reduce the use amount of raw and auxiliary material, significantly reduce use kind and the quantity of expensive complicated semiconductor manufacturing equipment, more can significantly promote comprehensive yield, reduce manufacturing cost; It is simple, practical that epitaxial substrate behind the integration is removed technique, yield is high, can avoid fully increasing the adverse effect that manufacturing process is brought because of the epitaxial wafer diameter, can effectively overcome is out at present prolongs variety of issue and the technical bottleneck that faces in the substrate removal process, reduces the manufacturing cost of semiconductor laminated and even whole semiconductor light emitting light source; The inner thermally conductive pathways of semiconductor light emitting light source involved in the present invention is short, and link and the interface of experience are few, and the capacity of heat transmission is strong, thermal resistance is low.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 is a kind of schematic diagram of common semiconductor light emitting light-source structure;
Fig. 2 is the schematic diagram of the first embodiment of the present invention's semiconductor light emitting light source of the present invention;
Fig. 3 is the schematic diagram of the second embodiment of the present invention's semiconductor light emitting light source of the present invention;
Fig. 4 is the schematic diagram of the 3rd embodiment of the present invention's semiconductor light emitting light source of the present invention;
Fig. 5 is the schematic diagram of the 4th embodiment of the present invention's semiconductor light emitting light source of the present invention;
Fig. 6 is the schematic diagram of the 5th embodiment of the present invention's semiconductor light emitting light source of the present invention;
Fig. 7 is the schematic diagram of the first embodiment of the present invention's semiconductor luminous chip of the present invention.
Embodiment
As shown in Figure 2, the first embodiment of semiconductor light emitting light source of the present invention, comprise insulated substrate 21, p weld pad 22a, n weld pad 22b, metal level 23, p-type electric-conducting layer 24a, luminescent layer 24b, N-shaped conductive layer 24c, current extending 25, n electrode 25a, interconnecting lead 26, fluorescence coating 27, embedding body 28, adjacent semiconductor illuminating source embedding body 28a, 28b, semiconductor laminated all around insulating barrier 29, needle-like p pad 210a, needle-like n pad 210b, substrate insulating layer 211, line of cut position 220a, 220b etc.
In the present embodiment, the first conductive layer, the first weld pad, the first pad are respectively p-type electric-conducting layer 24a, p weld pad 22a, needle-like p pad 210a; The second conductive layer, the second weld pad, the second pad, the second electrode are respectively N-shaped conductive layer 24c, n weld pad 22b, needle-like n pad 210b, n electrode 25a.Substrate can adopt insulated substrate 21, comprises ceramic substrate, glass substrate, crystallite glass substrate, plastic base or composite construction substrate.Be provided with at least one conducting channel of semiconductor laminated power supply that is at this insulated substrate 21, comprise p weld pad 22a, n weld pad 22b etc.
By comprising that silk screen printing, plating, chemical plating, thick-film technique, thin-film technique prepare p weld pad 22a, n weld pad 22b at the first surface of insulated substrate 21.Can prepare the Au that is applicable to carry out with metal level 23 ultra-sonic welded on p weld pad 22a top layer, carry out the AuSn of eutectic weldering, the Ag that carries out Reflow Soldering pressurizes or heats the Au that depresses bonding or the Ni that carries out soldering.Same, can prepare on n weld pad 22b top layer and to be applicable to the Au that interconnecting lead 26 carries out ultra-sonic welded.This p weld pad 22a, n weld pad 22b can be the single or multiple lift structure, and spendable material comprises Cu, Ti, Cr, Ni, Ag, Al, W, Au, Pt, Pd and alloy thereof etc.
In the present embodiment, this first surface is the smooth planar surface in insulated substrate 21 preparations; Understandable, also can be in insulated substrate 21 preparation with the smooth surface of concavo-convex platform as first surface.
This metal level 23 can adopt the single or multiple lift structure, and preparation metal level 23 spendable materials comprise one or more in Cr, Cu, Ti, Al, Ni, W, Pt, Pd, Ag, Au, AuSn, Mo and the alloy thereof.
Generally include between metal level 23 and the p-type electric-conducting layer 24a and can form low-resistance and transparent ITO, ZnO, NiO, have the contact layer that the heavily doped low resistance semiconductor etc. of identical conduction model is made with conductive layer with p-type electric-conducting layer 24a, perhaps comprise can good light Ag, Al, the DBR(Bragg mirror of reflection characteristic) etc. the reflector that forms, this reflector can be the single or multiple lift structure.Further, also can arrange between this reflector and the p-type electric-conducting layer 24a ITO, ZnO, NiO, have the contact layer that the heavily doped low resistance semiconductor etc. of identical conduction model is made with conductive layer, to form the low-resistance contact.
Metal level 23 top layer that contacts with p weld pad 22a can prepare the Au that is applicable to carry out with p weld pad 22a ultrasonic bonding, carry out the AuSn of eutectic weldering, carry out the Ag of Reflow Soldering, pressurize or heat the Au that depresses bonding, or the Ni that carries out soldering, be fixedly connected on the p weld pad 22a thereby can add modes such as depressing bonding or soldering by ultrasonic bonding, eutectic weldering, Reflow Soldering, pressurization or heating.
Then after the attenuate epitaxial substrate, the epitaxial wafer that is coated with metal level 23 is cut into some semiconductor light emitting crystal grain, again semiconductor laminated, the metal level 23 that is formed by p-type electric-conducting layer 24a, luminescent layer 24b and N-shaped conductive layer 24c, the epitaxial substrate used when semiconductor laminated together with epitaxial growth, be semiconductor light emitting crystal grain, be placed on the p weld pad 22a.P weld pad 22a surface is close on metal level 23 surfaces, adds the mode of depressing bonding, soldering by comprising ultrasonic bonding, eutectic weldering, Reflow Soldering, pressurization or heating, and metal level 23 and p weld pad 22a are interconnected.
Usually when preparation semiconductor light emitting crystal grain, deposit insulating barrier 29 in semiconductor laminated side all around, whole semiconductor laminated side is all around wrapped up, thereby can effectively prevent in whole semiconductor light emitting light source preparation process, between N-shaped conductive layer 24c and p-type electric-conducting layer 24a, short circuit and electric leakage occur, promote process rate and light source reliability.The material for preparing these insulating barrier 29 uses comprises SiO 2, Si 3N 4, Al 2O 3, AlN, TiO 2, pottery or the insulating material such as glass.
Behind all metal surfaces and semiconductor laminated side that protection is exposed; employing comprises that the mode of chemical corrosion behind chemical stripping or the grinding attenuate or laser lift-off removes epitaxial substrate; and then by comprising the method etching semiconductor stack surface of chemical corrosion and/or dry etching (comprising ICP); the exposed section is for the preparation of the N-shaped conductive layer 24c of current extending 25; and make N-shaped conductive layer 24c surface structuration by the mode of chemical corrosion and/or dry etching; form the coarse or convex-concave surface of taper, to increase the forward light extraction efficiency.
Prepare current extending 25 on N-shaped conductive layer 24c surface by the mode that comprises electron beam evaporation plating, magnetron sputtering, this current extending 25 can be the single or multiple lift structure, comprise ITO, ZnO, NiO, perhaps directly adopt the semiconductor layer of heavily doped low-resistance N-shaped conductive layer 24c as current extending 25.
In the present embodiment, prepare n electrode 25a by the mode that comprises chemical plating, electron beam evaporation plating, magnetron sputtering on current extending 25 surfaces; Connect n electrode 25a and n pad 22b by the mode that comprises ultrasonic bonding with interconnecting lead 26, form conduction and connect.Understandable, n electrode 25a also can be connected on another p pad 22a or the n pad 22b by interconnecting lead 26, thus so that two or more relation that forms serial or parallel connection between semiconductor laminated.
N electrode 25a generally includes Au, Ag, the Cu layer that can form Ti, Cr, Pt, the Pd layer of strong bond with current extending 25 and can carry out with interconnecting lead 26 ultrasonic bonding.Wherein, n electrode 25a can be the single or multiple lift structure as the second electrode, and spendable material comprises Cu, Ti, Cr, Ni, Ag, Al, W, Au, Pt, Pd and alloy thereof etc.; And interconnecting lead 26 can use conductive threads such as comprising Ag silk, Au silk, Cu silk or B alloy wire.
Remove after the protective layer of exposed metal surface and semiconductor laminated side; prepare substrate insulating layers 211 by the mode that comprises electron beam evaporation plating, magnetron sputtering, plasma-enhanced chemical vapor deposition PECVD (PECVD), spin-coating glass (Silica) on insulated substrate 21 surfaces, thereby can better guarantee the insulation between p weld pad 22a and the n weld pad 22b.This substrate insulating layer 211 comprises SiO 2, Si 3N 4, Al 2O 3, TiO 2, pottery, glass etc.
Further, can also form a glimmering gel coating at the semiconductor laminated top that reaches all around by comprising that dripping the mode that is coated with, sprays applies epoxy resin, silica gel, the silicones that contains fluorescent material around semiconductor laminated periphery, form fluorescence coating 27 after solidifying.
The first pad of present embodiment is the first needle-like pad, and the second pad is the second needle-like pad, and as shown in Figure 2, this first needle-like pad is needle-like p pad 210a, and the second needle-like pad is needle-like n pad 210b.Insert needle-like p pad 210a and needle-like n pad 210b pre-in the through hole of substrate 21, and be through to respectively p weld pad 22a and n weld pad 22b, forming conduction connects, thereby can be connected in the power supply circuits by needle-like p pad 210a and needle-like n pad 210b, be whole semiconductor light emitting light source access power supply.
The first semiconductor laminated and corresponding weld pad, the second weld pad, current extending are by a packaging body institute sealed envelope that is arranged on the first surface of substrate.In the present embodiment, around semiconductor laminated drop casting glue, and wrap whole semiconductor laminated and fluorescence coating 27, and current extending 25, n electrode 25a, interconnecting lead 26, p weld pad 22a, the junction of p weld pad 22a and p pad 210a, the junction of n weld pad 22b and n weld pad 22b and n pad 210b etc., obtain spherical embedding body as packaging body by utilizing the casting glue surface tension to solidify from being shaped, or utilize prefabricated pressing mold to be pressed on the casting glue, slough prefabricated pressing mold after the curing and obtain the embedding body identical with the pressing mold cavity shape as packaging body, thereby finish the making of whole semiconductor light emitting light source.Wherein, this casting glue can be in epoxy resin, silicon rubber, the silicones one or more, further, can also mix fluorescent material and/or diffusant in casting glue, enriches light effect.
At last, can obtain being with the direct insertion semiconductor light emitting light source of embedding body along line of cut 220a, 220b cutting and/or the insulated substrate 21 that bursts apart.28a, 28b are the embedding bodies of the adjacent semiconductor light emitting light source made simultaneously on insulated substrate 21 among the figure.
The below introduces the method for making above-mentioned semiconductor light emitting light source, may further comprise the steps:
Preparation semiconductor light emitting crystal grain: at the extension substrate surface, epitaxial growth is semiconductor laminated successively to press the order of N-shaped conductive layer 24c, luminescent layer 24b, p-type electric-conducting layer 24a.At exposed p-type electric-conducting layer 24a surface coverage metal level 23; After the thinning back side epitaxial substrate, cut the semiconductor light emitting crystal grain that the epitaxial wafer that bursts apart becomes some separation.This semiconductor light emitting crystal grain comprises epitaxial substrate, semiconductor laminated and metal level, and its shape comprises a kind of in square, rectangle, hexagonal rhombus, other polygon; The surface area of semiconductor light emitting crystal grain is less than 500 square millimeters.
Can prepare contact layer between metal level 23 and the p-type electric-conducting layer 24a, be connected thereby between metal level 23 and p-type electric-conducting layer 24a, form the low-resistance contact.Further, between metal level 23 and described contact layer, can also prepare the reflector, thus can reflection ray, improve light extraction efficiency.
In the preparation of semiconductor light emitting crystal grain, can be along the line of cut of semiconductor light emitting intergranule, preparation one from semiconductor laminated surface or metal level 23 surfaces be through to semiconductor laminated and epitaxial substrate groove at the interface.Line of cut is positioned at groove central authorities, and recess width is filled with inorganic insulating material greater than cutting width in groove, and inorganic insulating material comprises SiO 2, Si 3N 4, Al 2O 3, AlN, TiO 2, glass or pottery, fill method comprises electron beam evaporation, magnetron sputtering, plasma-enhanced chemical vapor deposition PECVD (PECVD), spin-coating glass (Silica).
The preparation substrate: the first surface at insulated substrate 21 prepares the corresponding conducting channel of one or more semiconductor light emitting light sources.In the present embodiment, this conducting channel first surface of being included in insulated substrate 21 prepares p weld pad 22a and the n weld pad 22b of mutually insulated.And preparation and p weld pad 22a and n weld pad 22b the first pad and the second pad that are electrically connected respectively; In the present embodiment, this first pad and the second pad are respectively needle-like p pad 210a and needle-like n pad 210b.
Connect semiconductor light emitting crystal grain and substrate: the semiconductor light emitting crystal grain of preparation is placed on p weld pad 22a surface, and metal level 23 surfaces are close to mutually with p weld pad 22a surface, and the strong bonded conducting.Metal level 23 surfaces comprise ultrasonic bonding, eutectic weldering, Reflow Soldering, soldering or one or more modes in the bonding under pressurization or heating pressurized conditions with the associated methods on p weld pad 22a surface.
Remove substrate: after finishing being fixedly connected with of semiconductor light emitting crystal grain and substrate, epitaxial substrate is removed in conducting channel, pad and semiconductor laminated side that protection is exposed then.Remove the adoptable method of epitaxial substrate and comprise chemical stripping, chemical corrosion, the polishing of attenuate post-chemical mechanical or laser lift-off etc.
The preparation current extending: the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the epitaxial substrate, expose the N-shaped conductive layer 24c for the preparation of current extending 25, and structuring N-shaped conductive layer 24c surface, make it to form taper rough surface or convex-concave surface; And at structuring N-shaped conductive layer 24c surface preparation current extending 25.
Being electrically connected current extending 25 is connected with n weld pad 22b current extending 25 conducted electricity with n weld pad 22b or another p weld pad 22a and is connected.In the present embodiment, connect n electrode 25a and n pad 2b by interconnecting lead 26, form conduction and connect.
Preparation packaging body: around semiconductor laminated and corresponding p weld pad 22a, n weld pad 22b, current extending 25 drops or coating casting glue, surface tension curing after shaping or pressing mold shaping by casting glue obtains the embedding body, thereby finishes the making of whole semiconductor light emitting light source.
Understandable; before the preparation packaging body; can also remove after the protective layer of metal surface and semiconductor laminated exposed sides; prepare substrate insulating layers 211 by the mode that comprises electron beam evaporation plating, magnetron sputtering, plasma-enhanced chemical vapor deposition PECVD (PECVD), spin-coating glass (Silica) on insulated substrate 21 surfaces, thereby can better guarantee the insulation between p weld pad 22a and the n weld pad 22b.This substrate insulating layer 211 comprises SiO 2, Si 3N 4, Al 2O 3, TiO 2, pottery, glass etc.
Further, can also form a fluorescent glue coating at the semiconductor laminated top that reaches all around by comprising that dripping the mode that is coated with, sprays applies epoxy resin, silica gel, the silicones that contains fluorescent material around semiconductor laminated periphery, form fluorescence coating 27 after solidifying.
Preparation semiconductor light emitting light source: along the line of cut cutting and/or the insulated substrate 21 that contains a plurality of semiconductor light emitting light sources of the bursting apart semiconductor light emitting light source that obtains separating.
Use semiconductor light emitting light source of the present invention and manufacture method, can directly be fixed on the p weld pad 22a of insulated substrate 21 by metal level 23 semiconductor laminated, and be prepared with the insulated substrate 21 of needle-like p pad 10a and needle-like n pad 10b, can be directly as lamp plate, the lamp bar, the substrate of lamppost etc., need not that said needs carry out chip manufacturing in the prior art, the LED encapsulation, forward again the flow processs such as lamp applications to, can significantly shorten the manufacturing process from epitaxial wafer to the semiconductor light emitting light source, the device category and the quantity that reduce process procedure and must use, chip manufacturing and the manufacturing of semiconductor light emitting light source and light fixture manufacturing are organically combined, the use amount of raw and auxiliary material can not only be significantly reduced, more comprehensive yield can be significantly promoted, reduce manufacturing cost.
In addition, the inner thermally conductive pathways of semiconductor light emitting light source involved in the present invention is short, directly is passed to p weld pad 22a by metal level 23, distributes by insulated substrate 21 again, and link and the interface of experience are few, and the capacity of heat transmission is strong, thermal resistance is low; Semiconductor light emitting light source manufacture method involved in the present invention can be avoided can effectively overcoming the variety of issue and the technical bottleneck that face at present because of the adverse effect of epitaxial wafer diameter increase to manufacturing process in substrate removal process fully.
As shown in Figure 3, the second embodiment of semiconductor light emitting light source of the present invention, comprise insulated substrate 31, p weld pad 32, metal level 33, semiconductor laminated 34, current extending 35, interconnect conductive layers 36, semiconductor laminated around insulating barrier 37, n weld pad 38, fluorescence coating 39, embedding body 310, p pad 310a, p interconnecting metal 311a, n pad 310b, n interconnecting metal 311b, line of cut position 320a, 320b, 320c.
Comprise with the embodiment difference of Fig. 2: by interconnect conductive layers 36 replacement n electrode 25a and the interconnecting leads 26 by comprising that electron beam evaporation plating, magnetron sputtering, chemical plating mode prepare, omitted the preparation process of n electrode 25a.Described interconnect conductive layers is the single or multiple lift structure; Prepare the spendable material of described interconnect conductive layers and comprise in Cu, Ti, Cr, Ni, Ag, Al, W, Au, Pt, Pd and the alloy thereof one or more.
Adopt interconnect conductive layers 36 to replace wire interconnecting lead 26 can avoid the inefficacy that causes because of interconnecting lead 26 fractures fully, can significantly promote cold-and-heat resistent impact capacity and anti-vibration ability.In addition, replace respectively needle-like p pad 310a, n pad 310b by the sheet p pad 310a, the n pad 310b that are suitable for the surface mount welding.This p pad 310a, n pad 310b are arranged on insulated substrate 31 away from semiconductor laminated 34 second surface, and, utilize p interconnecting metal 311a to run through this insulated substrate 31 and p pad 310a is connected conduction connects with the p weld pad, utilize n interconnecting metal 311b to run through this insulated substrate 31 and n pad 310b is connected conduction connects with the n weld pad.In addition, replace the sealing of partial points drip irrigation by plane perfusion casting glue.After the casting glue curing and cutting by the plane perfusion, can obtain block labeling type semiconductor illuminating source.Other structures and manufacture method and Fig. 2 embodiment are basic identical, so do not give unnecessary details.
As shown in Figure 4, it is the semiconductor light emitting light source of the third embodiment of the present invention, comprise cavity 49, lens pin 410, lens pin jack 411, p pad 412a, n pad 412b, interconnecting metal 413a, 413b between insulated substrate 41, p weld pad 42a, n weld pad 42b, metal level 43, semiconductor laminated 44, current-diffusion layer 45, n electrode 46, interconnecting lead 47, preform lens 48, preform lens 48 and the insulated substrate 41, semiconductor laminated around side insulation layer 414, substrate insulating layer 415, line of cut position 420a, 420b.
Comprise with Fig. 2,3 illustrated embodiment differences: preform lens 48 or preform lampshade replace the embedding body 28(Fig. 2 by the casting glue shaping) and embedding body 310(Fig. 3).Preform lens 48 or the employed material of preform lampshade comprise one or more in epoxy resin, silicon rubber, silicones, PMMA, PC, glass, the transparent ceramic.Further, in preform lens or preform lampshade, be mixed with fluorescent material and/or diffusant, perhaps in preform lens or preform lampshade coated inner wall, spraying or paste a fluorescence coating and/or diffusant, to improve light extraction efficiency.
As shown in Figure 4, the lens pin jack 411 that can be prefabricated on insulated substrate 41 surfaces be complementary with the lens pin 410 of preform lens 48 or the groove that matches with the port of preform lens 48, so that preform lens 48 can scioptics pin jack 411 or groove and insulated substrate 41 locating fasteners together so that the bonding and sealing of preform lens 48 and substrate joint portion.
Can be before placing lens 48, wrap up semiconductor laminatedly 44 by the coating fluorescent glue, after solidifying to form fluorescence coating, place again lens 48.Place after the lens 48, can fill glue to cavity 49 interior perfusions by glue filling opening prefabricated on substrate 41 and steam vent, comprise silica gel, silicon rubber or be mixed with fluorescent material and/or the silica gel of diffusant, silicon rubber.After the perfusion, sealing glue filling opening and steam vent.
Other structures of present embodiment semiconductor light emitting light source and manufacture method and Fig. 2, Fig. 3 embodiment are basic identical, so do not give unnecessary details.
As shown in Figure 5, the 4th embodiment of semiconductor light emitting light source of the present invention, comprise insulated substrate 51, p weld pad 52a, n weld pad 52b, metal level 53, semiconductor laminated 54, current extending 55, n electrode 56, interconnecting lead 57, fluorescence coating 58, embedding body 59, the template 510 of casting, template pin 511, template pin jack 512, p pad 513a, n pad 513b, interconnecting metal 514a, 514b, semiconductor laminated around side insulation layer 515, substrate insulating layer 516, line of cut position 520a, 520b.
Be with Fig. 2, embodiment difference shown in Figure 3: present embodiment adopt casting replace drop from be shaped, pressing mold is shaped and the plane perfusion is shaped, its advantage can obtain different embedding bodies 59 by design template 510 cavity shapes, such as convex, spill etc.
Its manufacture process comprises template 510 is snapped in the template pin jack 512 by template pin 511, then injects casting glue by glue filling opening prefabricated on substrate 51 in template 510 inner chambers, and air is discharged by steam vent in the cavity.After filling the template cavity, sealing glue filling opening and steam vent.After casting glue solidifies, slough template 10.
The p pad of Fig. 2, Fig. 3, Fig. 4 and embodiment shown in Figure 5 and opposite side or the opposite side surface that the n pad all is arranged on substrate also can be arranged on described substrate first surface, are positioned at the outside of embedding body or lens or lampshade.Casting glue or lens or the semiconductor laminated of lampshade parcel can be single or several, and carry out mutual series, parallel or connection in series-parallel connection by the inner conductive circuit.
As shown in Figure 6, the 5th embodiment of semiconductor light emitting light source of the present invention, comprise electrically-conductive backing plate 61, substrate insulating layer 62, p weld pad 63, metal level 64, semiconductor laminated 65, current extending 66, interconnect conductive layers 67, n weld pad 68, cofferdam 69, semiconductor laminated around side insulation layer 610, fluorescence coating 611, embedding body 612, surface insulation layer 613, n interconnecting metal 68a, n pad 68b, p interconnecting metal 63a, p pad 63b, line of cut position 620a, 620b.
The difference of present embodiment and other embodiment is: adopt electrically-conductive backing plate 61 to replace insulated substrate.Described metal substrate comprises iron substrate, ferroalloy substrate, copper base, copper alloy substrate, aluminium base, aluminium alloy base plate, molybdenum substrate, molybdenum alloy substrate.A plurality of semiconductor laminated 65 in order to arrange at electrically-conductive backing plate, can mutually go here and there again simultaneously, and semiconductor laminated, at substrate surface one substrate insulating layer 62 is arranged.This electrically-conductive backing plate 61 can have the substrate of conductive characteristic for metal substrate or other, and the operable material of metal substrate comprises one or more in iron, ferroalloy, copper, copper alloy, aluminium, aluminium alloy, molybdenum, the molybdenum alloy.
The p weld pad 63 of conducting channel, n weld pad 68 etc. are arranged on the surface of substrate insulating layer 62.Schematically provided the state of two semiconductor laminated 65 series connection among the figure, a semiconductor laminated current extending is connected on another semiconductor laminated p weld pad 63 by interconnect conductive layers 67, forms series connection.Certainly, if substrate can be used as the utmost point in semiconductor laminated the interconnecting, semiconductor laminatedly can directly be placed on substrate surface or be set directly on the weld pad of substrate surface then accordingly, thus so that semiconductor laminated formation is connected in parallel state.
From Fig. 2, embodiment illustrated in fig. 3ly different be: in the present embodiment, surround semiconductor laminated 65, and corresponding weld pad, current extending etc. with cofferdam 69 first, then in the cofferdam, pour into casting glue or fill the casting glue that is mixed with fluorescent material and/or diffusant, form the embedding body structure with the cofferdam after solidifying.Other structures of present embodiment semiconductor light emitting light source and manufacture method and above-mentioned other embodiment are basic identical, so do not give unnecessary details.
Understandable, by simplifying said method, can also prepare semiconductor luminous chip, as shown in Figure 7, may further comprise the steps at least:
Preparation semiconductor light emitting crystal grain: at the extension substrate surface, epitaxial growth is semiconductor laminated successively to press the order of N-shaped conductive layer 74c, luminescent layer 74b, p-type electric-conducting layer 74a.At exposed p-type electric-conducting layer 74a surface coverage metal level 73; After the described epitaxial substrate of thinning back side, cut and/or the described epitaxial wafer that bursts apart becomes the semiconductor light emitting crystal grain of some separation.This semiconductor light emitting crystal grain comprises epitaxial substrate, semiconductor laminated and metal level, and its shape comprises a kind of in square, rectangle, hexagonal rhombus, other polygon; The surface area of semiconductor light emitting crystal grain is less than 500 square millimeters.
The preparation substrate: the first surface at electrically-conductive backing plate 71 prepares the corresponding conducting channel of one or more semiconductor luminous chips.In the present embodiment, this conducting channel first surface of being included in electrically-conductive backing plate 71 prepares the p weld pad 72a of mutually insulated.
Connect semiconductor light emitting crystal grain and substrate: the semiconductor light emitting crystal grain of preparation is placed on p weld pad 72a surface, and metal level 73 surfaces are close to mutually with p weld pad 72a surface, and the strong bonded conducting.Metal level 73 surfaces comprise ultrasonic bonding, eutectic weldering, Reflow Soldering, soldering or one or more modes in the bonding under pressurization or heating pressurized conditions with the associated methods on p weld pad 72a surface.
Remove substrate: behind conducting channel, pad and the semiconductor laminated side that protection is exposed, remove the epitaxial substrate on the described semiconductor light emitting crystal grain, but the method for choice for use comprises in chemical stripping, chemical corrosion, the polishing of attenuate post-chemical mechanical, the laser lift-off one or more;
The preparation current extending: the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the epitaxial substrate, expose the N-shaped conductive layer 74c for the preparation of current extending 75, and structuring N-shaped conductive layer 74c surface, make it to form taper rough surface or convex-concave surface; And at structuring N-shaped conductive layer 74c surface preparation current extending 75; At described current extending surface preparation the second electrode 75a.
Preparation semiconductor luminous chip: along line of cut cutting and/or the substrate that contains a plurality of semiconductor luminous chips of the bursting apart semiconductor luminous chip that obtains separating.
Understandable, each technical characterictic of the various embodiments described above can combination in any uses and unrestricted.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure or equivalent flow process conversion that utilizes specification of the present invention and accompanying drawing content to do; or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.

Claims (10)

1. a semiconductor light emitting light source is characterized in that, comprises a substrate, and described substrate has first surface and second surface; First surface at described substrate is provided with at least one conducting channel, and described conducting channel comprises at least one the first weld pad and at least one the second weld pad; Described the first weld pad and the second weld pad are insulated from each other, and described substrate has first pad that is connected with described the first weld pad at least, have second pad that is connected with described the second weld pad at least;
At least be provided with the semiconductor lamination on described the first weld pad surface, described semiconductor laminated one first conductive layer, a luminescent layer and one second conductive layer of comprising at least; Described the first conductive layer surface has a metal level, and described metal level directly contacts with described the first conductive layer or between described metal level and described the first conductive layer a reflector and/or a contact layer arranged; Described layer on surface of metal is close to described the first weld pad surface and is connected; Described the second conductive layer surface has a current extending; Described current extending is connected with described the second weld pad or another the first weld pad conduction, perhaps, is provided with at least one second electrode on described current extending surface, is connected with described the second weld pad or described another the first weld pad conduction by described the second electrode again;
Described semiconductor laminated and corresponding described the first weld pad, the second weld pad and current extending, or corresponding described the first weld pad, the second weld pad, current extending and the second electrode be by a packaging body institute sealed envelope that is arranged on described substrate first surface, and described the first pad and the second pad are positioned at the described substrate first surface in the described packaging body outside, described substrate side surfaces and/or described substrate second surface.
2. semiconductor light emitting light source according to claim 1 is characterized in that, described semiconductor laminated side is all around wrapped up by an insulating barrier.
3. semiconductor light emitting light source according to claim 1 and 2, it is characterized in that, described the first pad is arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces, and by being arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces and/or running through described packaging body and/or run through the first interconnecting metal of described substrate, be connected with described the first weld pad conduction; Perhaps, described the first pad is to pass the first needle-like pad that described substrate is connected with described the first weld pad conduction;
Described the second pad is arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces, and by being arranged on described substrate first surface, described substrate second surface and/or described substrate side surfaces and/or running through described packaging body and/or run through the second interconnecting metal of described substrate, be connected with described the second weld pad conduction; Perhaps, described the second pad is to pass the second needle-like pad that described substrate is connected with described the second weld pad conduction.
4. semiconductor light emitting light source according to claim 3, it is characterized in that, when the described substrate that described the second weld pad, the second pad and the second interconnecting metal are set has conductive characteristic, between described the second weld pad, the second pad and the second interconnecting metal and described substrate, be provided with a substrate insulating layer; When the described substrate that described the first weld pad, the first pad and the first interconnecting metal are set has conductive characteristic, between described the first weld pad, the first pad and the first interconnecting metal and described substrate, be provided with a substrate insulating layer or be set directly on the described substrate.
5. semiconductor light emitting light source according to claim 1 and 2 is characterized in that, described current extending is connected with described the second weld pad or described another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead; Perhaps,
Have one second electrode at least on described current extending surface, described the second electrode is connected with described the second weld pad or described another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead.
6. semiconductor light emitting light source according to claim 1 and 2 is characterized in that, described substrate first surface is smooth planar surface or the smooth surface that comprises concavo-convex platform.
7. semiconductor light emitting light source according to claim 1 and 2 is characterized in that, described packaging body comprises embedding body, preform lens or preform lampshade;
Described embedding body is by the casting glue solidified forming; Described casting glue comprises one or more in epoxy resin, silicon rubber, silicones, the epoxy resin that is mixed with fluorescent material and/or diffusant, silicon rubber, the silicones; During described embedding body forming mode comprises from shaping, pressing mold shaping, casting, filling is shaped in the cofferdam one or more;
Described preform lens and preform lampshade comprise one or more in epoxy resin, silicon rubber, silicones, PMMA, PC, glass, transparent ceramic, the epoxy resin that is mixed with fluorescent material and/or diffusant, silicon rubber, silicones, PMMA, PC, glass, the transparent ceramic.
8. a method of making claim 1 or 2 described semiconductor light emitting light sources is characterized in that, may further comprise the steps at least:
S1: preparation semiconductor light emitting crystal grain: at the extension substrate surface, epitaxial growth is described semiconductor laminated successively by the order of the second conductive layer, luminescent layer, the first conductive layer; The first conductive layer surface that is exposed with the whole epitaxial wafer of described metal level uniform fold; After the described epitaxial substrate of thinning back side, cut and/or the described epitaxial wafer that bursts apart becomes the semiconductor light emitting crystal grain of some separation; Described semiconductor light emitting crystal grain comprises described epitaxial substrate, described semiconductor laminated and described metal level;
S2: the preparation substrate: the first surface at substrate prepares the corresponding conducting channel of one or more semiconductor light emitting light sources, perhaps, after the first surface of the described substrate of tool conductive characteristic prepares described substrate insulating layer, prepare the corresponding conducting channel of one or several semiconductor light emitting light sources at described surface of insulating layer again; Described conducting channel comprises at least one the first weld pad and at least one the second weld pad; At least one the first pad that preparation is connected with at least one the first weld pad is with at least one the second pad that is connected with at least one the second weld pad;
S3: connect semiconductor light emitting crystal grain and substrate: described semiconductor light emitting crystal grain is placed on the first weld pad surface, described layer on surface of metal and described the first weld pad surface are close to mutually, and the strong bonded conducting; The associated methods on described layer on surface of metal and described the first weld pad surface comprises ultrasonic bonding, eutectic weldering, Reflow Soldering, soldering, one or more methods under pressurization or heating pressurized conditions in the bonding;
S4: remove substrate: behind conducting channel, pad and the semiconductor laminated side that protection is exposed, remove the epitaxial substrate on the described semiconductor light emitting crystal grain; The method of removing epitaxial substrate on the described semiconductor light emitting crystal grain comprises one or more in chemical stripping, chemical corrosion, the polishing of attenuate post-chemical mechanical, the laser lift-off;
S5: the preparation current extending: the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the described epitaxial substrate, expose the second conductive layer for the preparation of current extending, and structuring the second conductive layer surface, make it to form taper rough surface or convex-concave surface; Cover described current extending at described structuring the second conductive layer surface;
S6: be electrically connected described current extending and be connected weld pad: described current extending is connected with described the second weld pad or another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead; Perhaps, behind at least one the second electrode of described current extending surface preparation, be connected with described the second weld pad or described another the first weld pad conduction by at least one interconnect conductive layers and/or interconnecting lead by described the second electrode again; Described interconnect conductive layers is the thin metal layer by sputter or evaporation or chemical plating or electroplating deposition, and described interconnecting lead is the wire by ultrasonic bonding;
S7: preparation packaging body: adopt comprise following any: a: around described the first semiconductor laminated and corresponding weld pad, the second weld pad, current extending or current extending and the second electrode drop or coating casting glue, by the surface tension of casting glue from be shaped or pressing mold be shaped after curing obtain the embedding body; B: preform lens or preform lampshade are arranged on described substrate first surface, its opening parcel forms the first semiconductor laminated and corresponding weld pad, the second weld pad, current extending or current extending and the second electrode, interconnect conductive layers or the interconnecting lead of single semiconductor light emitting light source, and seals the junction surface between described preform lens or preform lampshade and the described substrate first surface; Inject casting glue in the cavity that between described preform lens or preform lampshade and described substrate first surface, forms or inject the casting glue that is mixed with fluorescent material and/or diffusant; C: embedding body shaping template is placed on described substrate first surface, in the template cavity, injects casting glue or be mixed with fluorescent material and/or the casting glue of diffusant, slough embedding body shaping template after solidifying to form the embedding body; D: form single semiconductor light emitting light source semiconductor laminated, and corresponding the first weld pad, the second weld pad, current extending or current extending and the second electrode, interconnect conductive layers or interconnecting lead around the cofferdam is set after, in the cofferdam, fill casting glue or fill the casting glue that is mixed with fluorescent material and/or diffusant, solidify to form the embedding body;
S8: preparation semiconductor light emitting light source: along the line of cut cutting and/or the substrate that contains a plurality of semiconductor light emitting light sources of the bursting apart semiconductor light emitting light source that obtains separating.
9. method according to claim 8 is characterized in that, before S7 prepared packaging body, it was described semiconductor laminated to use the casting glue that is mixed with fluorescent material to wrap up first, forms fluorescence coating after solidifying.
10. a method of making semiconductor luminous chip is characterized in that, may further comprise the steps at least:
S1: preparation semiconductor light emitting crystal grain: at the extension substrate surface, by the order of the second conductive layer, luminescent layer, the first conductive layer successively epitaxial growth semiconductor lamination; The first conductive layer surface that is exposed with the whole epitaxial wafer of a metal level uniform fold; Described metal level directly contacts with described the first conductive layer or between described metal level and described the first conductive layer a reflector and/or a contact layer is arranged;
S2: after the described epitaxial substrate of thinning back side, cut and/or the described epitaxial wafer that bursts apart becomes the semiconductor light emitting crystal grain of some separation; Described semiconductor light emitting crystal grain comprises described epitaxial substrate, described semiconductor laminated and described metal level;
S3: preparation substrate: prepare the corresponding conducting channel of one or more semiconductor luminous chips at the first surface of substrate or after the first surface of described substrate arranges an insulating barrier; Described conducting channel comprises at least one the first weld pad and at least one the first pad that is connected with at least one the first weld pad; Described substrate first surface is smooth planar surface or the smooth surface that comprises concavo-convex platform;
S4: connect semiconductor light emitting crystal grain and substrate: described semiconductor light emitting crystal grain is placed on the first weld pad surface, described layer on surface of metal and described the first weld pad surface are close to mutually, and the strong bonded conducting; The associated methods on described layer on surface of metal and described the first weld pad surface comprises ultrasonic bonding, eutectic weldering, Reflow Soldering, soldering, one or more methods under pressurization or heating pressurized conditions in the bonding;
S5: remove substrate: after the conducting channel and semiconductor laminated side that protection is exposed, remove the epitaxial substrate on the described semiconductor light emitting crystal grain; The method of removing epitaxial substrate on the described semiconductor light emitting crystal grain comprises one or more in chemical stripping, chemical corrosion, the polishing of attenuate post-chemical mechanical, the laser lift-off;
S6: the preparation current extending: the mode etching of employing chemical corrosion and/or dry etching is removed the semiconductor laminated surface after the described epitaxial substrate, expose the second conductive layer for the preparation of current extending, and structuring the second conductive layer surface, make it to form taper rough surface or convex-concave surface; Cover a current extending at described structuring the second conductive layer surface; At at least one the second electrode of described current extending surface preparation;
S7: preparation semiconductor luminous chip: along line of cut cutting and/or the substrate that contains a plurality of semiconductor luminous chips of the bursting apart semiconductor luminous chip that obtains separating.
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