CN101615611A - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents

A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDF

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CN101615611A
CN101615611A CN200910160996A CN200910160996A CN101615611A CN 101615611 A CN101615611 A CN 101615611A CN 200910160996 A CN200910160996 A CN 200910160996A CN 200910160996 A CN200910160996 A CN 200910160996A CN 101615611 A CN101615611 A CN 101615611A
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knitting
semiconductor layer
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樊邦扬
翁新川
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Heshan Lide Electronic Enterprise Co Ltd
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Heshan Lide Electronic Enterprise Co Ltd
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Abstract

Light-emitting diode chip for backlight unit of the present invention comprises heat sink substrate, metallic bond layer and naked core, naked core comprises the n type semiconductor layer, luminescent layer, the p type semiconductor layer, reflector and electrode layer, be characterized in that metallic bond layer comprises first knitting layer and second knitting layer separate and that can be connected with circumscripted power line, and first knitting layer engages with the reflector, second knitting layer engages with electrode layer, described heat sink substrate is made as insulated part to the contact portion of its upper surface of major general and metallic bond layer, and described naked core forms the current path that thermoelectricity separates by described first knitting layer and second knitting layer and being connected of circumscripted power line.The present invention is owing to adopt the structure of thermoelectric separate type to make that heat sink substrate is used for dispelling the heat specially, and current-carrying part is then finished by the metallic bond layer composition, so its radiating effect obviously improves, has also correspondingly improved luminous efficiency simultaneously.The invention still further relates to the preparation method of light-emitting diode chip for backlight unit.

Description

A kind of light-emitting diode chip for backlight unit and preparation method thereof
Technical field
The present invention relates to a kind of light-emitting diode (LED) chip and preparation method thereof.
Background technology
Traditional light-emitting diode chip for backlight unit, since its be with electrode metal towards last, be placed on the base plate (substrate), so the luminescent layer of light-emitting diode chip for backlight unit is below electrode metal layer, the light part of sending is absorbed by electrode metal layer, thereby influences the light extraction efficiency of light-emitting diode.And along with the continuous development of semiconductor chip (chip) technology, traditional technology can not satisfy the requirement that increases day by day for the luminous efficiency of light-emitting diode and brightness.In order to improve the light extraction efficiency of light-emitting diode, flip-chip (flip chip) process quilt is widely used in the preparation of light-emitting diode.Owing to adopt the light-emitting diode of flip-chip chip technology preparation to have characteristics such as luminous efficiency height, heat radiation be better, the main flow that becomes the LED light-emitting diode so replace the light-emitting diode that adopts the traditional handicraft preparation gradually.Yet, the light-emitting diode of existing employing flip-chip process preparation, because the substrate of its tube core (die) has bad influence for the performance of luminescence chip, for example: the substrate (such as GaAs) of the tube core of emission reddish yellow light will absorb the light of part emission usually, then with the light of antireflection part emission, this causes the luminous efficiency of luminescence chip to reduce as the substrate (such as sapphire) of the tube core of gallium nitride based emission blue green light.In addition, mostly be that thermal conductivity ratio is lower as the material of the substrate of tube core, for example, the conductive coefficient of GaAs is 44-58W/mK, and sapphire conductive coefficient is 35-40W/mK.The heat that produces in the course of work of luminescence chip can't diffuse to the outside effectively like this, makes the life-span of luminescence chip reduce.Therefore luminous efficiency how to improve luminescence chip radiating efficiency and raising light becomes one of important topic of the required solution in this area.The applicant had once applied for the patent of a kind of light-emitting diode and preparation method thereof for this reason, light-emitting diode in this patent has been taked the single electrode chip of vertical stratification and has been removed the substrate of naked core on the chip owing to it, therefore effectively improved luminous efficiency and eliminated the influence of substrate chip, but because its heat sink substrate adopts electric conducting material to make, and two electrode layers that are connected with circumscripted power line are to be separately positioned on the back side and n type semiconductor layer of heat sink substrate, so this heat sink substrate also will be as electrodes conduct when serving as heat-radiating substrate, i.e. " thermoelectricity does not separate ", this structure is unfavorable for the heat radiation of chip because substrate is wanted heat conduction conducting simultaneously electric current.Also has the disclosed a kind of LED chip construction of Japan Patent JP2003-142736, although above its to be the auxiliary electrode of two separations will being connected with naked core be arranged on heat sink substrate, but its substrate 12 also will be as electrodes conduct when serving as heat-radiating substrate, therefore exist thermoelectricity not separate equally, be unfavorable for problems such as chip cooling.
Summary of the invention
The objective of the invention is at above-mentioned existing problems and deficiency, provide a kind of and adopt thermoelectric separated structures and effectively improve the radiating efficiency of luminescence chip and improve its luminous efficiency and light-emitting diode chip for backlight unit of acceptance rate and preparation method thereof.
Technical scheme of the present invention is achieved in that
Light-emitting diode chip for backlight unit of the present invention, comprise: heat sink substrate, be arranged on the metallic bond layer of this heat sink upper surface of base plate, be installed on the naked core of described heat sink substrate top, wherein said naked core comprises: n type semiconductor layer and be formed at luminescent layer on this n type semiconductor layer, be formed at the p type semiconductor layer on this luminescent layer, be formed at the reflector on this p type semiconductor layer and be formed at electrode layer on the described n type semiconductor layer, be characterized in: described metallic bond layer comprises first knitting layer and second knitting layer separate and that can be connected with circumscripted power line, and described first knitting layer engages with described reflector, described second knitting layer engages with described electrode layer, described heat sink substrate is made as insulated part to the contact portion of its upper surface of major general and metallic bond layer, and described naked core forms the current path that thermoelectricity separates by described first knitting layer and second knitting layer and being connected of circumscripted power line.
And the concrete structure of the heat sink substrate that insulate can come fixed as required, can form for the insulation board that is become by nonconductive material as above-mentioned heat sink substrate; The preferred version of above-mentioned heat sink substrate is for the base plate made by electric conducting material and be positioned at being used on the described base plate insulating barrier of this base plate with the isolation of above-mentioned metallic bond layer formed.
The naked core number of installing on heat sink substrate and the concrete docking structure of above-mentioned metallic bond layer and naked core can come fixed as required, during as naked core of device on heat sink substrate, above-mentioned first knitting layer can be made as comprise the circular middle body that is positioned at above-mentioned heat sink upper surface of base plate and from the above-mentioned naked core of a side direction of this circle middle body outside extension be used for the extension and the bonding wire part that are connected with circumscripted power line, above-mentioned second knitting layer be incomplete encirclement shape be centered around first knitting layer around, above-mentioned reflector, the p type semiconductor layer, rounded and the corresponding closed assembly of luminescent layer is in the core of said n type semiconductor layer, above-mentioned electrode layer be formed at the said n type semiconductor layer peripheral part and with above-mentioned reflector, the p type semiconductor layer, luminescent layer is separate, and the junction of described electrode layer and the above-mentioned first knitting layer extension has the notch that prevents short circuit.And reliable in structure again when making the present invention easy for installation, the present invention also can adopt the circular middle body with above-mentioned first knitting layer to be made as the round boss structure that is positioned at above-mentioned heat sink upper surface of base plate.For making the more even luminescent layer that makes of CURRENT DISTRIBUTION that is positioned at around the luminescent layer among the present invention luminous more even, preferred version of the present invention is that above-mentioned electrode layer is equated with distance between the reflector that is stacked, p type semiconductor layer, the luminescent layer; Also can be the left-hand component that above-mentioned first knitting layer is located at above-mentioned heat sink substrate, above-mentioned second conduction region is positioned at the right-hand component of above-mentioned heat sink upper surface of base plate, correspondingly closed assembly is in the left-hand component of said n type semiconductor layer for above-mentioned reflector, p type semiconductor layer, luminescent layer, and above-mentioned electrode layer is formed at the right-hand component of said n type semiconductor layer and separate with above-mentioned reflector, p type semiconductor layer, luminescent layer; Certainly also can also be the right-hand component that above-mentioned first knitting layer is located at above-mentioned heat sink substrate, above-mentioned second knitting layer be positioned at above-mentioned heat sink upper surface of base plate left-hand component and with above-mentioned reflector, p type semiconductor layer, luminescent layer correspondingly closed assembly in the right-hand component of said n type semiconductor layer with above-mentioned electrode layer is arranged on the left-hand component of n type semiconductor layer; For effectively improving luminous efficiency of the present invention, to satisfy the requirement of different users to LED power, also can install many naked cores that are matrix distribution to form high power LED chip above above-mentioned heat sink substrate, first knitting layer of its metallic bond layer and second knitting layer are to intert to be arranged to constitute a plurality of conductive regions corresponding with naked core.For making the naked core installation in this high power LED chip and processing more convenient, when making naked core, can not carry out the cutting of single chips, can according to the actual needs required chip cutting be become a monoblock to use, that is to say that reflector, p type semiconductor layer and luminescent layer, electrode layer with each naked core takes shape in to form high-power naked core structure on the same n type semiconductor layer.Preferably cut into line number, square that columns is identical, the array module cutting of preferred 3 * 3 or 4 * 4 formulas.
The preparation method of light-emitting diode chip for backlight unit of the present invention has a plurality of technical schemes that belong to a total inventive concept:
Scheme one: the preparation method of light-emitting diode chip for backlight unit of the present invention may further comprise the steps:
(1), the preparation upper surface has the heat sink substrate of insulating barrier, upper surface at this heat sink substrate plates metallic bond layer then, and first knitting layer and second knitting layer that this metallic bond layer are patterned into be isolated from each other, wherein, described first knitting layer comprises circular middle body and the extension and the bonding wire part that are connected with circumscripted power line from an epitaxial lateral overgrowth of this circle middle body being used for of stretching, and described second knitting layer is the peripheral position that incomplete encirclement shape is centered around first knitting layer;
(2), preparation naked core, this naked core comprises substrate, be formed at n type semiconductor layer on this substrate, be formed at the core of this n type semiconductor layer luminescent layer, be formed at p type semiconductor layer on this luminescent layer, be formed at the reflector on this p type semiconductor layer and be formed on peripheral part of this n type semiconductor layer and with reflector, p type semiconductor layer, the separate electrode layer of luminescent layer, and the corresponding above-mentioned first knitting layer extension position of described electrode layer has the notch that prevents short circuit current;
(3), first knitting layer and second knitting layer of metallic bond layer engage respectively with the reflector and the electrode layer of this naked core on will this heat sink upper surface of base plate;
(4), remove the substrate of this naked core.
For making light-emitting diode chip for backlight unit among the present invention reliable in structure again in easy for installation, the present invention also can adopt the circular middle body of above-mentioned first knitting layer is made the round boss structure that is positioned at above-mentioned heat sink upper surface of base plate, and the height of this round boss is general concordant with electrode layer.
Scheme two: the preparation method of light-emitting diode chip for backlight unit of the present invention may further comprise the steps:
(1), the preparation upper surface has the heat sink substrate of insulating barrier, upper surface at this heat sink substrate plates metallic bond layer then, and this metallic bond layer is patterned into be formed at first knitting layer on the left side and is formed at second knitting layer on the right, first knitting layer and second knitting layer are isolated from each other;
(2), the preparation naked core, this naked core comprises substrate, be formed at n type semiconductor layer on this substrate, be formed at luminescent layer on this n type semiconductor layer, be formed at p type semiconductor layer on this luminescent layer, be formed at the reflector on this p type semiconductor layer and be formed on the right-hand component of this n type semiconductor layer and with above-mentioned reflector, p type semiconductor layer, the separate electrode layer of luminescent layer;
First knitting layer and second knitting layer of the metallic bond layer on (three), will this heat sink upper surface of base plate engage respectively with the reflector and the electrode layer of this naked core;
(4), remove the substrate of this naked core.
Scheme three: the preparation method of light-emitting diode chip for backlight unit of the present invention may further comprise the steps:
(1), the upper surface of preparation has the heat sink substrate of insulating barrier, upper surface at this heat sink substrate plates metallic bond layer then, and this metallic bond layer is patterned into be isolated from each other and first knitting layer and second knitting layer of alternate interspersed setting, wherein above-mentioned first bonding land comprises many little bonding lands and each little knitting layer end is connected and to the extension and the bonding wire part that are connected with circumscripted power line of being used for of above-mentioned naked core one side extension, and little knitting layer is provided with a plurality of Metal Contact boss that are matrix distribution, and above-mentioned second knitting layer comprises that many are arranged on above-mentioned little knitting layer periphery and many little knitting layers that link to each other corresponding to the other end of the above-mentioned first knitting layer extension;
(2), prepare high-power naked core: on substrate, form earlier n type semiconductor layer, luminescent layer, p type semiconductor layer successively, method by liquid or laser-induced thermal etching makes luminescent layer and p type semiconductor layer form the corresponding luminescence unit of a plurality of and above-mentioned Metal Contact boss then, on the p of each luminescence unit type semiconductor layer, form the reflector again, and forming the electrode layer of separating with luminescence unit on the n type semiconductor layer on peripheral part of luminescence unit, and the extension position of the little knitting layer of corresponding each bar of above-mentioned electrode layer has the notch that prevents short circuit;
(3), with each reflector of naked core and electrode layer respectively with the Metal Contact boss of first knitting layer with second knitting layer engages and make the naked core upside-down mounting on heat sink substrate;
(4), remove the substrate of this naked core.
Scheme four: the preparation method of light-emitting diode chip for backlight unit of the present invention may further comprise the steps:
(1), the preparation upper surface has the heat sink substrate of insulating barrier, upper surface at this heat sink substrate plates metallic bond layer then, and this metallic bond layer is patterned into be formed at second knitting layer at heat sink upper surface of base plate middle part and is formed at the first knitting layer second knitting layer peripheral part and that be isolated from each other with second knitting layer, wherein above-mentioned second bonding land comprises many little bonding lands and each little knitting layer end connected and to the bonding wire part that is connected with circumscripted power line of being used for of above-mentioned naked core one side extension, above-mentioned first knitting layer comprise many be arranged on above-mentioned little knitting layer periphery and corresponding to many continuous little knitting layers of the other end of above-mentioned second knitting layer bonding wire part;
(2), prepare high-power naked core: on lining, form n type semiconductor layer, luminescent layer p type semiconductor layer successively earlier, method by liquid or laser-induced thermal etching makes luminescent layer and p type semiconductor layer form many and the corresponding luminescence unit in above-mentioned little bonding land then, on the p of each luminescence unit type semiconductor layer, form the reflector again, partly be provided with at corresponding each little knitting layer on the n type semiconductor layer then and separate the electrode layer of arranging about being with the above-mentioned reflector that is stacked, p type semiconductor layer, luminescent layer;
(3), the reflector of each naked core and electrode layer are engaged with first knitting layer and second knitting layer of metallic bond layer on the described heat sink upper surface of base plate respectively;
(4), remove the substrate of this naked core.
In the present invention, in the step (four) of above-mentioned each scheme, also can be on the naked core that has removed substrate protective mulch again.This protective layer material of its refractive index between the refractive index of air and n N-type semiconductor N of serving as reasons made.Its effect: one, can protect upper surface as the n type semiconductor layer of the light-emitting area of this naked core; Two, this protective layer is one deck anti-reflecting layer; its refractive index is (refractive index of protective layer is between 1～2.6) between the refractive index of air and N type semiconductor; be similar to the anti-reflecting layer of a transiens; can reduce the full emission phenomenon between exiting surface and the air effectively, improve whole light extraction efficiency.In order further to reduce because as the light loss that total reflection caused between the interface of the n type semiconductor layer of exiting surface and protective layer; after removing the substrate of above-mentioned naked core; the upper surface roughening of wanting earlier the n type semiconductor layer that will expose coats protective layer in the upper surface and the side of n type semiconductor layer again to form the surface coarsening layer.
In order to protect chip not to be subjected to the impact of static, setting-in static discharge layer on the above-mentioned heat sink substrate.Above-mentioned static discharge layer is that the two Zener diodes that are flush-mounted in heat sink substrate middle part form.
And the concrete manufacture method of above-mentioned heat sink substrate can be varied, as being directly to make insulated substrate with insulating material, directly forms metallic bond layer on the upper surface of this insulated substrate then; For making structure of the present invention more reliable, preferred fabrication method of the present invention is: the base plate of making heat sink substrate earlier with electric conducting material, and then on this base plate, be inlaid with the static discharge layer of two Zener diodes, on the static discharge layer, apply oxidation-resistant film or anticorrosive film again, form insulating barrier at plate upper surface then, next on the upper surface of static discharge layer and insulating barrier, form metallic bond layer again, and this metallic bond layer is patterned into first bonding land and second bonding land that is isolated from each other.
In the present invention, owing to adopt the upper surface at least of heat sink substrate is made insulated part that does not form current path and the structure that directly forms current path by first knitting layer that is positioned at this upper surface of base plate and the naked core that makes second knitting layer and being connected of external power supply upside-down mounting and power supply with the contact portion of metallic bond layer, therefore in use, because heat sink substrate is used for dispelling the heat specially, current-carrying part then both can be used for engaging of naked core and heat sink substrate by it, the metallic bond layer composition that can be used as simultaneously electrode is again finished, promptly adopted " thermoelectric separate type " structure, so its radiating effect obviously improves, also correspondingly improved luminous efficiency simultaneously.Because the present invention adopts base plate of being made by electric conducting material and the insulating barrier that is positioned on the base plate to form the insulated substrate structure, further guaranteed structural reliability of the present invention simultaneously.And, further guaranteed the luminous efficiency of chip of the present invention because the present invention also adopts the protective layer structure that protection n N-type semiconductor N is set on naked core.In order to reduce because as the light loss that total reflection caused between the interface of the n type semiconductor layer of exiting surface and protective layer; preferably after having removed n N-type semiconductor N substrate and before the formation protective layer; adopt for example method such as photoetching, etching, with the surface roughening of the n type semiconductor layer that exposes to form the surface coarsening layer.The protective layer of coating naked core has been protected the surface coarsening layer as light-emitting area on the one hand like this, also can reduce the absorption or the reflection of light on the other hand.In addition, in the upper surface of heat sink substrate, form the Electrostatic Discharge layer of two zener diode structure, can protect chip not to be subjected to the impact of static.LED chip construction of the present invention is simple, volume is little, thermal diffusivity is good, long service life, and the luminous efficiency height of chip, can be widely used in the various light-emitting diodes.
The present invention is further illustrated below in conjunction with accompanying drawing.
Description of drawings
Fig. 1 is the structural representation of light-emitting diode chip for backlight unit among the embodiment of the invention I;
Figure 1A is a Facad structure schematic diagram of being with the heat sink substrate of metallic bond layer and electrostatic layer in the example I;
Figure 1B is the A-A sectional structure schematic diagram of Figure 1A;
Fig. 1 C is the structural representation of naked core in the example I;
Fig. 1 D is the plan structure schematic diagram of Fig. 1 C;
Fig. 1 E is the B-B sectional structure schematic diagram of Fig. 1 D;
Fig. 1 F is the naked core upside-down mounting structural representation on the heat sink substrate in Figure 1A with Fig. 1 C;
Fig. 1 G coats the structural representation behind the protective layer again for the substrate with naked core among Fig. 1 F removes;
Fig. 2 is the structural representation of light-emitting diode chip for backlight unit among the embodiment of the invention II;
The Facad structure schematic diagram of the heat sink substrate of band metallic bond layer and electrostatic layer in Fig. 2 A example II;
Fig. 2 B is the C-C sectional structure schematic diagram of Fig. 2 A;
Fig. 2 C is the Facad structure schematic diagram of naked core in the example II;
Fig. 2 D is the D-D sectional structure schematic diagram of Fig. 2 C;
Fig. 2 E is the naked core upside-down mounting structural representation on the heat sink substrate in Fig. 2 A with Fig. 2 C;
Fig. 2 F coats the structural representation behind the protective layer again for the substrate with naked core among Fig. 2 E removes;
Fig. 3 is the structural representation of light-emitting diode chip for backlight unit among the embodiment of the invention III;
Fig. 3 A is a structural representation of being with the heat sink substrate of metallic bond layer and electrostatic layer among Fig. 3;
Fig. 3 B is the E-E sectional structure schematic diagram of Fig. 3;
Fig. 3 C is the structural representation of naked core among Fig. 3;
Fig. 3 D is the structural representation of Fig. 3 C upside-down mounting on Fig. 3 A;
Fig. 4 is the structural representation of light-emitting diode chip for backlight unit among the embodiment of the invention IV;
Fig. 4 A is the structural representation of the F-F section of Fig. 4.
Fig. 4 B is a structural representation of being with the heat sink substrate of metallic bond layer and electrostatic layer among Fig. 4;
Fig. 4 C is the structural representation of naked core among Fig. 4.
Embodiment
As Fig. 1-shown in Figure 4, light-emitting diode chip for backlight unit of the present invention, comprise: heat sink substrate 1, be arranged on the metallic bond layer 3 of this heat sink substrate 1 upper surface, the naked core 4 of device above described heat sink substrate 1, wherein said naked core 4 comprises: n type semiconductor layer 44 and be formed at luminescent layer 43 on this n type semiconductor layer 44, be formed at the p type semiconductor layer 42 on this luminescent layer 43, be formed at the reflector 41 on this p type semiconductor layer 42 and be formed at electrode layer 45 on the described n type semiconductor layer 44, effectively improve its radiating effect and luminance thermoelectric the separation for guaranteeing that chip of the present invention in use can reach, described metallic bond layer 3 comprises first knitting layer 31 and second knitting layer 32 that also can be connected with circumscripted power line that is arranged at described heat sink substrate 1 upper surface separately, and described first knitting layer 31 engages with described reflector 41, described second knitting layer 32 engages with described electrode layer 45, described heat sink substrate 1 to the contact portion of its upper surface of major general and metallic bond layer 3 is made as insulated part, and described naked core 4 forms the current path that thermoelectricity separates by described first knitting layer 31 and second knitting layer 32 and being connected of circumscripted power line.Therefore in use, electric current is from second knitting layer 32 that is connected with circumscripted power line flow through electrode layer 45, n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42, reflector 41, flows through first knitting layer 31 that is connected with another power line again and forms current path.Because heat sink substrate 1 is used for dispelling the heat specially, and current-carrying part is then finished by metallic bond layer 3 compositions that engage, can be used as simultaneously electrode that it both can be used for naked core 4 and heat sink substrate 1, promptly adopted " thermoelectric separate type " structure, so its radiating effect obviously improves, also correspondingly improved luminous efficiency simultaneously.And it is fixed that the concrete structure of heat sink substrate 1 can come as required, can form for the insulation board that is become by nonconductive material as above-mentioned heat sink substrate 1, is selected from other non-conducting materials such as gallium nitride, aluminium nitride or its combination as the material of this heat sink substrate 1; The preferred version of above-mentioned heat sink substrate 1 is for the base plate 12 made by electric conducting material and be formed at being used on the described base plate 12 insulating barrier 11 that this base plate 12 and above-mentioned metallic bond layer 3 are isolated is formed.The material of this is heat sink substrate 1 can be selected from silicon, copper, molybdenum, carborundum and or its combination.Because the metallic bond layer 3 that is used to engage can utilize the metal material of high thermal conductivity to form, and therefore can reduce the thermal resistance of light-emitting diode, has both made light-emitting diode under the driving of big electric current, chip can be not overheated yet.And naked core 4 numbers of device and above-mentioned metallic bond layer 3 can come to decide with the concrete docking structure of naked core 4 as required on heat sink substrate 1, during as naked core 4 of device on heat sink substrate 1, can be with above-mentioned first knitting layer 31 be set as comprise the circular middle body 301 that is positioned at above-mentioned heat sink substrate 1 upper surface and from the above-mentioned naked core 4 of a side direction of this circle middle body 301 outside extension be used for the extension 302 and the bonding wire part 303 that are connected with circumscripted power line, above-mentioned second knitting layer 32 be incomplete encirclement shape be centered around first knitting layer 31 around, above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 rounded and corresponding closed assemblies engage in the middle body of said n type semiconductor layer 44 and with the circular middle body 301 of above-mentioned first bonding land 31, above-mentioned electrode layer 45 be formed at said n type semiconductor layer 44 around and with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 is separate, and the position of described electrode layer 45 corresponding above-mentioned first knitting layer, 31 extensions has the notch 47 that prevents short circuit, height as for this notch 47 can come to decide as required, and can directly open on electrode layer 45, also can reach on the n type semiconductor layer 44, concrete structure can be fixed according to using needs.And for making light-emitting diode chip for backlight unit of the present invention reliable in structure again in easy for installation, the present invention also can adopt the circular middle body 301 with above-mentioned first knitting layer 31 to be made as the round boss structure that is positioned at above-mentioned heat sink substrate 1 upper surface.For making the more even luminescent layer that makes of CURRENT DISTRIBUTION that is positioned at around the luminescent layer 43 luminous more even, preferred version of the present invention is above-mentioned electrode layer 45 and distance between the reflector 41 that is stacked, p type semiconductor layer 42, the luminescent layer 43 to be made as equate; The present invention also can directly be located at above-mentioned first knitting layer 31 left-hand component of above-mentioned heat sink substrate 1 upper surface, above-mentioned second knitting layer 32 is located at the right-hand component of above-mentioned heat sink substrate 1, correspondingly closed assembly is in the left-hand component of said n type semiconductor layer 44 for above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43, and above-mentioned electrode layer 45 is formed at the right-hand component of said n type semiconductor layer 44 and separate with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43; Certainly also can also be the right-hand component that above-mentioned first knitting layer 31 is located at above-mentioned heat sink substrate 1, above-mentioned second bonding land 32 be positioned at above-mentioned heat sink substrate 1 upper surface left-hand component and with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 correspondingly closed assembly grade in the right-hand component of said n type semiconductor layer 44 with the left lateral that above-mentioned electrode layer 45 is arranged on n type semiconductor layer 44; For effectively improving luminous efficiency of the present invention, to satisfy the requirement of different users to LED power, also many naked cores 4 can be housed above above-mentioned heat sink substrate 1, above-mentioned first knitting layer 31 and second knitting layer 32 are alternate interspersed setting at the upper surface of above-mentioned heat sink substrate 1 and constitute the corresponding conductive region of a plurality of and naked core 4.For the present invention being processed and installing more convenient, when making naked core 4, can not carry out the cutting of single chips, can according to the actual needs required chip cutting be become a monoblock to use, preferably cut into line number, square that columns is identical, the array module cutting of preferred 3 * 3 or 4 * 4 formulas.For the production that makes light-emitting diode chip for backlight unit of the present invention with install more convenient, preferred version of the present invention is the reflector 41 of above-mentioned each naked core 4, p type semiconductor layer 42 and luminescent layer 43, electrode layer 45 to be taken shape in form high-power naked core structure on the same n type semiconductor layer 44, as Fig. 3-shown in Figure 4.And the present invention makes high power LED chip can multiple structure, as shown in Figure 3, above-mentioned first knitting layer 31 comprises many little knitting layers 311 and the little knitting layer of each bar 311 ends is connected and to the extension 314 and the bonding wire part 313 that are connected with circumscripted power line of being used for of above-mentioned naked core 4 one side extensions, above-mentioned second knitting layer 32 comprises that many are arranged on above-mentioned little knitting layer 311 peripheries and many little knitting layers 321 that an end links to each other, and for making structure of the present invention more reliable, the little knitting layer 311 of above-mentioned first knitting layer 31 is provided with a plurality of circular metal contact boss 312 that are matrix distribution, the reflector 41 of above-mentioned each naked core 4, p type semiconductor layer 42, luminescent layer 43 correspondingly is formed at Metal Contact boss 312 parts of corresponding each little knitting layer 311 on the n type semiconductor layer 44, the electrode layer 45 of above-mentioned each naked core 4 be centered around little knitting layer 311 and Metal Contact boss 312 peripheral part and with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 is separate, above-mentioned each naked core 4 is connected on the above-mentioned heat sink substrate 1 with docking of the described Metal Contact boss 312 and second knitting layer 32 respectively by its reflector 41 and electrode layer 45, and the exit position of the little knitting layer 311 of each electrode layer 45 corresponding each bar has the notch 47 that prevents short circuit.The height of same this notch 47 can come fixed as required, and can directly open on electrode layer 45, also can reach on the n type semiconductor layer 44, and concrete structure can be fixed according to using needs.As shown in Figure 4, above-mentioned second knitting layer 32 comprises many little knitting layers 321 and the little knitting layer of each bar 321 ends is connected and to the bonding wire part 323 that is connected with circumscripted power line of being used for of above-mentioned naked core 4 one side extensions, above-mentioned first knitting layer 31 comprises that many are arranged on above-mentioned little knitting layer 321 peripheries and many little knitting layers 311 that an end links to each other, the reflector 41 of above-mentioned each naked core 4, p type semiconductor layer 42, luminescent layer 43 correspondingly is formed on the n type semiconductor layer 44 part of corresponding each little knitting layer 311, the electrode layer 45 of above-mentioned each naked core 4 be formed at corresponding each little knitting layer 321 part on the corresponding n type semiconductor layer 44 and with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 forms separate left and right sides distributed architecture.And in the present invention, the core of said n type semiconductor layer 44 can with the peripheral part copline, or shown in Fig. 1 D, also can be set as in the position of its corresponding above-mentioned first knitting layer 31 can be for the boss structure of above-mentioned luminescent layer 43 closed assemblies.In the present invention, also can be on the naked core 4 that has removed substrate protective mulch 5 again.This protective layer 5 material of its refractive index between the refractive index of air and n N-type semiconductor N of serving as reasons made.Its effect: the one, protection is as the upper surface of the n type semiconductor layer 44 of the light-emitting area of this naked core 4; the 2nd, protective layer is one deck anti-reflecting layer; its refractive index is (refractive index of protective layer 5 is between 1～2.6) between the refractive index of air and N type semiconductor; be similar to the anti-reflecting layer of a transiens; can reduce the full emission phenomenon between exiting surface and the air effectively, improve whole light extraction efficiency.In order to reduce owing to, be provided with surface coarsening layer 6 between the upper surface of said n type semiconductor layer 44 and the protective layer 5 as the light loss that total reflection caused between the interface of the n type semiconductor layer 44 of exiting surface and protective layer 5.In order to protect chip not to be subjected to the impact of static, be provided with the static discharge layer 2 that is flush-mounted in heat sink substrate 1 middle part between the upper surface of above-mentioned heat sink substrate 1 and the above-mentioned metallic bond layer 3.LED chip construction of the present invention is simple, volume is little, thermal diffusivity is good, long service life, and the luminous efficiency height of chip, can be widely used in the various light-emitting diodes.
Describe concrete manufacture method of the present invention with reference to accompanying drawing in detail by embodiment.For the convenience that illustrates, accompanying drawing is not proportionally drawn.
Example I: at first describe the preparation method of light-emitting diode chip for backlight unit according to an embodiment of the invention with reference to figure 1 and Figure 1A-Fig. 1 G.As Figure 1A, shown in Figure 1B, at first preparing upper surface has the heat sink substrate 1 of insulating barrier, on the upper surface of this heat sink substrate 1, pass through for example sputter then, methods such as plating form metallic bond layer 3, and this metallic bond layer 3 is patterned into forms first knitting layer 31 and second knitting layer 32 be isolated from each other, wherein, described first knitting layer 31 comprises circular middle body 301 and the extension 302 and the bonding wire part 303 that are connected with circumscripted power line from an epitaxial lateral overgrowth of this circle middle body 301 being used for of stretching, and described second knitting layer 32 is the location about that incomplete encirclement shape is centered around first knitting layer 31; As Fig. 1 C, shown in Fig. 1 D, the preparation naked core: this naked core 4 comprises substrate 46, be formed at the n type semiconductor layer 44 on this substrate 46, the corresponding luminescent layer 43 that is formed at the middle body of this n type semiconductor layer 44, be formed at the p type semiconductor layer 42 on this luminescent layer 43, be formed at the reflector 41 on this p type semiconductor layer 42 and be formed at this n type semiconductor layer 44 peripheral part and with above-mentioned reflector 41, p type semiconductor layer 42, the electrode layer 45 that luminescent layer 43 is separate, and described electrode layer 45 corresponding above-mentioned first knitting layers 31 extension positions have the notch 47 that prevents short circuit current.Height as for this notch 47 can come to decide as required, and can directly open on electrode layer 45, also can reach on the n type semiconductor layer 44, and concrete structure can be fixed according to using needs.For making light-emitting diode chip for backlight unit among the present invention reliable in structure again in easy for installation, the present invention also can adopt the circular middle body 301 of above-mentioned first knitting layer 31 is made the round boss structure that is positioned at above-mentioned heat sink substrate 1 upper surface, and the height of this round boss is general concordant with electrode layer.For making the more even luminescent layer that makes of CURRENT DISTRIBUTION that is positioned at around the luminescent layer 43 luminous more even, preferred version of the present invention is above-mentioned electrode layer 45 and distance between the reflector 41 that is stacked, p type semiconductor layer 42, the luminescent layer 43 to be made as equate.The material of above-mentioned metallic bond layer is selected from Al, Ag, Pt, Cr, Mo, W, Au, Cu, Ni, BeAu or its combination.Alternatively, can also in the upper surface of this heat sink substrate 1, form the static discharge ESD layer 2 of two Zener diodes, shown in Figure 1B.The preferred fabrication method of above-mentioned heat sink substrate 1 is: the base plate 12 of making heat sink substrate 1 earlier with electric conducting material, and then on this base plate 12, be inlaid with the static discharge layer 2 of two Zener diodes, on static discharge layer 2, apply oxidation-resistant film or anticorrosive film again, form insulating barrier 11 at base plate 12 upper surfaces then, next on the upper surface of static discharge layer 2 and insulating barrier 11, form metallic bond layer 3 again, and this metallic bond layer 3 is patterned into first bonding land 31 and second bonding land 32 that is isolated from each other, and above-mentioned first bonding land 31 is centered around the peripheral position of described each little bonding land 321 along insulating barrier 11.And the core of n type semiconductor layer 44 can with the peripheral part copline, or shown in Fig. 1 D, be step-like.According to the wavelength of light emitted of light-emitting diode chip for backlight unit, the material of this p type semiconductor layer 42, luminescent layer 43, n type semiconductor layer 44 can be selected from GaN, InGaN or AlInGaP etc.On p type semiconductor layer 42, form reflector 41 then, and on peripheral part of this n type semiconductor layer 44, form electrode layer 45 by for example method such as sputter, plating.Reflector 41 and electrode layer 45 can form with identical or different material.The material of reflector 41 and electrode layer 45 is selected from Al, Ag, BeAu, Pt, Cr, Mo, W, Au, ITO, RuO 2, ZnO and NiO or its combination.
Next, shown in Fig. 1 E, first knitting layer 31 and second knitting layer 32 of the metallic bond layer on the upper surface of this heat sink substrate 13 engaged respectively with the reflector 41 and the electrode layer 45 of this naked core 4.The method of above-mentioned joint for example can be selected from ultrasonic heat platen press, eutectic welding, vacuum hot-pressing, Reflow Soldering connection.
Then, shown in Fig. 1 F, for example remove substrate 46 by methods such as chemical etching, grinding or laser lift-offs.Next, form protective layer 5 has removed the naked core 4 of substrate 46 with covering upper surface and side.Promptly this protective layer 5 coats n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 and the electrode layer 45 of this naked core 4.This protective layer 5 material of its refractive index between the refractive index of air and n N-type semiconductor N of serving as reasons made.The effect of protective layer 5: the one, protection is as the upper surface of the n type semiconductor layer 44 of the light-emitting area of this naked core 4; the 2nd, protective layer is one deck anti-reflecting layer; its refractive index is (refractive index of protective layer 5 is between 1～2.6) between the refractive index of air and N type semiconductor; be similar to the anti-reflecting layer of a transiens; can reduce the full emission phenomenon between exiting surface and the air effectively, improve whole light extraction efficiency.The material of this protective layer 5 can be selected from elargol, epoxy resin, spin-coating glass, silica gel, contain materials such as the AB glue of fluorescent material or its combination.
In order to reduce because as the light loss that total reflection caused between the interface of the n type semiconductor layer 44 of exiting surface and protective layer 5; preferably after having removed Semiconductor substrate 46 and before the formation protective layer 5; adopt for example method such as photoetching, etching, with the surface roughening of the n type semiconductor layer 44 that exposes to form surface coarsening layer 6.Form n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 and the electrode layer 45 of protective layer 5 then, as shown in Figure 1 to coat this naked core.
The light-emitting diode chip for backlight unit made of method according to an embodiment of the invention, in use because electric current is from second knitting layer 32 that is connected with the circumscripted power line electrode layer 45 of flowing through, n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42, reflector 41, flow through first knitting layer 31 that is connected with another power line again and form current path, be that current-carrying part then both can be used for engaging of naked core 4 and heat sink substrate 1 by it, metallic bond layer 3 compositions that can be used as simultaneously electrode are again finished, and heat sink substrate 1 is used for dispelling the heat specially, that is to say and adopted " thermoelectric separate type " structure, so its radiating effect obviously improves, also correspondingly improved luminous efficiency simultaneously.And because the present invention has adopted the method for mechanical lapping, chemical etching or laser lift-off to remove the substrate 46 of naked core 4, therefore avoided because the absorption of substrate 46 or the light loss that reflection causes, thereby improved the luminous efficiency of light-emitting diode chip for backlight unit.And, can improve the acceptance rate of light-emitting diode chip for backlight unit owing to can adopt stressless method to remove this substrate 46.In addition, the protective layer 5 of coating naked core 4 has been protected the surface coarsening layer 6 as light-emitting area on the one hand, also can reduce the absorption or the reflection of light on the other hand.The method according to this invention can adopt the ultrasonic heat platen press that naked core 4 is engaged with heat sink substrate 1.Because the metallic bond layer 3 that is used to engage can utilize the metal material of high thermal conductivity to form, and therefore can reduce the thermal resistance of light-emitting diode.Even light-emitting diode is under the driving of big electric current, chip can be not overheated yet.In addition, in the upper surface of heat sink substrate, formed the static discharge ESD layer 2 of two zener diode structure, thereby can protect chip not to be subjected to the impact of static, as shown in Figure 1.
Example II: shown in Fig. 2 and 2A-Fig. 2 F,, at first prepare the heat sink substrate 1 that upper surface has insulating barrier 11 with reference to figure 2A, Fig. 2 B.On the upper surface of this heat sink substrate 1, form metallic bond layer by for example method such as sputter, plating, and this metallic bond layer is patterned into first knitting layer 31 that is formed on the left-hand component and second knitting layer, 32, the first knitting layers 31 and second knitting layer 32 of right-hand component is isolated from each other.The material of this metallic bond layer 3 is selected from Al, Ag, Pt, Cr, Mo, W, Au, Cu, Ni, BeAu or its combination.Alternatively, can also in the upper surface of this heat sink substrate 1, form the static discharge ESD layer 2 of two Zener diodes, shown in Figure 1B.The preferred fabrication method of above-mentioned heat sink substrate 1 is: the base plate 12 of making heat sink substrate 1 earlier with electric conducting material, and then on this base plate 12, be inlaid with the static discharge layer 2 of two Zener diodes, on static discharge layer 2, apply oxidation-resistant film or anticorrosive film again, form insulating barrier 11 at base plate 12 upper surfaces then, next on the upper surface of static discharge layer 2 and insulating barrier 11, form metallic bond layer 3 again, and this metallic bond layer 3 is patterned into first bonding land 31 and second bonding land 32 that is isolated from each other.
Shown in Fig. 2 C-Fig. 3 D, preparation naked core 4.This naked core comprises substrate 46, be formed at n type semiconductor layer 44 on this substrate 46, be formed at left-hand component on this n type semiconductor layer 44 luminescent layer 43, be formed at the p type semiconductor layer 42 on this luminescent layer 43.According to the wavelength of light emitted of light-emitting diode chip for backlight unit, the material of this p type semiconductor layer 42, luminescent layer 43, n type semiconductor layer 44 can be selected from GaN, InGaN or AlInGaP etc.On p type semiconductor layer 42, form reflector 41 then, and form the electrode layer 45 separate on the right of this n type semiconductor layer 42 with described reflector 41, p type semiconductor layer 42, luminescent layer 43 by method such as sputter, plating for example.Reflector 41 and electrode layer 45 can form with identical or different material.The material of reflector 41 and electrode layer 45 is selected from Al, Ag, BeAu, Pt, Cr, Mo, W, Au, ITO, RuO 2, ZnO and NiO or its combination.
Next, shown in Fig. 2 E, with the reflector 41 of this naked core 4 and electrode layer 45 respectively with the upper surface of this heat sink substrate 1 on metallic bond layer 3 first knitting layer 31 and second knitting layer 32 engages and make naked core 4 upside-down mountings on heat sink substrate 1.The method of above-mentioned joint for example can be selected from ultrasonic heat platen press, eutectic welding, vacuum hot-pressing, Reflow Soldering connection.
Then, shown in Fig. 2 F, for example remove substrate 46 by methods such as chemical etching, grinding or laser lift-offs.Next, form protective layer 5 has removed the naked core of substrate 46 with covering upper surface and side.Promptly this protective layer 5 coats n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 and the electrode layer 45 of this naked core.
Certainly in the present embodiment, also can also be the right-hand component that above-mentioned first knitting layer 31 is located at above-mentioned heat sink substrate 1, above-mentioned second knitting layer 32 be positioned at above-mentioned heat sink substrate 1 upper surface left-hand component and with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 correspondingly closed assembly grade in the right-hand component of said n type semiconductor layer 44 with the left lateral that above-mentioned electrode layer 45 is arranged on n type semiconductor layer 44.
All the other and last embodiment no longer repeat at this together.
EXAMPLE III: shown in Fig. 3 and Fig. 3 A-3D, the present invention also provides a kind of manufacture method of powerful light-emitting diode chip for backlight unit.With reference to figure 3A, at first Zhi Bei upper surface has the heat sink substrate 1 of insulating barrier.On the upper surface of this heat sink substrate 1, cross then by for example spattering, methods such as plating form metallic bond layer 3, and with this metallic bond layer 3 be patterned into be isolated from each other and alternate interspersed setting first knitting layer 31 and second knitting layer 32, wherein above-mentioned first bonding land 31 comprises many little bonding lands 311 and each little knitting layer 311 end is connected and to the extension 314 and the bonding wire part 313 that are connected with circumscripted power line of being used for of above-mentioned naked core 4 one side extensions, and little knitting layer 311 is provided with a plurality of circular metal contact boss 312 that are matrix distribution, preferred 3 * 3 or 4 * 4 symmetric form Figure 3 shows that 3 * 3 form.The material of this metallic bond layer is selected from Al, Ag, Pt, Cr, Mo, W, Au, Cu, Ni, BeAu or its combination.Above-mentioned second knitting layer 32 comprises that many are arranged on above-mentioned little knitting layer 311 peripheries and many little knitting layers 321 that link to each other corresponding to the other end of above-mentioned first knitting layer, 31 extensions.The material of this metallic bond layer is selected from Al, Ag, Pt, Cr, Mo, W, Au, Cu, Ni, BeAu or its combination.And, also can be inlaid with the static discharge ESD layer 2 of two Zener diodes at heat sink substrate 1, shown in Fig. 3 B in order to protect chip not to be subjected to the impact of static.The preferred fabrication method of above-mentioned heat sink substrate 1 is: the base plate 12 of making heat sink substrate 1 earlier with electric conducting material, and then on this base plate 12, be inlaid with the static discharge layer 2 of two Zener diodes, on static discharge layer 2, apply oxidation-resistant film or anticorrosive film again, form insulating barrier 11 at base plate 12 upper surfaces then, next on the upper surface of static discharge layer 2 and insulating barrier 11, form metallic bond layer 3 again, and this metallic bond layer 3 is patterned into first bonding land 31 and second bonding land 32 that is isolated from each other.
Prepare high-power naked core 4: form earlier n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 on substrate 46 successively, the method by liquid or laser-induced thermal etching makes luminescent layer 43 and p type semiconductor layer 42 form a plurality of and above-mentioned Metal Contact boss 312 corresponding luminescence units then.Little luminescent layer and the formation of p type semiconductor layer that luminescence unit is herein served as reasons and is separated into.Above-mentioned luminescence unit preferred 3 * 3 or 4 * 4 symmetric form Figure 3 shows that 3 * 3 form.On the p of each luminescence unit type semiconductor layer 42, form reflector 41 again, and on peripheral part of luminescence unit, forming the electrode layer of separating with luminescence unit 45 on the n type semiconductor layer 44 by for example method such as sputter, plating.Short circuit takes place when preventing that naked core 4 from engaging with metallic bond layer 3 simultaneously, also can have notch 47 in extension 314 positions of the little knitting layer 311 of corresponding each bar on above-mentioned electrode layer 45 or n type semiconductor layer 44.This outer reflective layer 41 and electrode layer 45 can form with identical or different material.The material of reflector 41 and electrode layer 45 is selected from Al, Ag, BeAu, Pt, Cr, Mo, W, Au, ITO, RuO 2, ZnO and NiO or its combination.Then with each reflector 41 of naked core 4 and electrode layer 45 respectively with the Metal Contact boss 312 of first knitting layer 31 with second knitting layer 32 engages and make naked core 4 upside-down mountings on heat sink substrate 1.The method of above-mentioned joint for example can be selected from ultrasonic heat platen press, eutectic welding, vacuum hot-pressing, Reflow Soldering connection.Remove substrate 46 by methods such as chemical etching, grinding or laser lift-offs again, as shown in Figure 3.Next, form protective layer 5 has removed the naked core 4 of substrate 46 with covering upper surface and side.Promptly this protective layer 5 coats n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 and the electrode layer 45 of this naked core 4.The material of this protective layer 5 for example is selected from elargol, epoxy resin, spin-coating glass, silica gel, the AB glue that contains fluorescent material or its combination.The reflectivity of this protective layer 5 helps to reduce as the n type semiconductor layer 44 of exiting surface and the light loss that total reflection caused between the air between the reflectivity of air and n type semiconductor layer 44.In order to reduce because as the light loss that total reflection caused between the interface of the n type semiconductor layer 44 of exiting surface and protective layer 5; preferably after having removed Semiconductor substrate 46 and before the formation protective layer 5; adopt for example method such as photoetching, etching, with the surface roughening of the n type semiconductor layer 44 that exposes to form surface coarsening layer 6.And then n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 and the electrode layer 45 of formation protective layer 5 to coat this naked core.
EXAMPLE IV: as shown in Figure 4: the manufacture method of light-emitting diode chip for backlight unit of the present invention: at first prepare the heat sink substrate 1 that upper surface has insulating barrier, on the upper surface of this heat sink substrate 1, pass through for example sputter then, methods such as plating form metallic bond layer 3, and this metallic bond layer 3 is patterned into by first knitting layer 31 of this isolation and second knitting layer 32, first knitting layer 31 and the 32 interlaced settings of second knitting layer, wherein above-mentioned second bonding land 32 comprises many little bonding lands 321 and each little knitting layer 321 end connected and to the bonding wire part 323 that is connected with circumscripted power line of being used for of above-mentioned naked core 4 one side extensions, above-mentioned first knitting layer 31 comprise many be arranged on above-mentioned little knitting layer 321 peripheries and corresponding to many continuous little knitting layers 311 of the other end of above-mentioned second knitting layer, 32 extensions.The material of this metallic bond layer is selected from Al, Ag, Pt, Cr, Mo, W, Au, Cu, Ni, BeAu or its combination.Alternatively, can also in the upper surface of this heat sink substrate 1, form the static discharge ESD layer 2 of two Zener diodes, shown in Fig. 4 B.The preferred fabrication method of above-mentioned heat sink substrate 1 is the Electrostatic Discharge layer 2 that heat sink substrate 1 is inlaid with two Zener diodes on also, on Electrostatic Discharge layer 2, apply oxidation-resistant film or anticorrosive film again, form insulating barrier 11 at heat sink substrate 1 upper surface then.Next on the upper surface of Electrostatic Discharge layer 2 and insulating barrier 11, form metallic bond layer 3 by for example method such as sputter, plating, and this metallic bond layer 3 is patterned into first bonding land 31 and 32, the first bonding lands 31, second bonding land and the 32 interlaced settings of second bonding land that are isolated from each other.
Prepare high-power naked core 4 then: on substrate 46, form earlier n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 successively, method by liquid or laser-induced thermal etching makes luminescent layer 43 and p type semiconductor layer 42 form many and above-mentioned little bonding land 311 corresponding luminescence units then, on the p of each luminescence unit type semiconductor layer 42, form reflector 41 again, about corresponding each little knitting layer 321 part setting and above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43 are on the n type semiconductor layer 44, separate the electrode layer 45 of arranging then.Reflector 41 and electrode layer 45 can form with identical or different material.The material of reflector 41 and electrode layer 45 is selected from Al, Ag, BeAu, Pt, Cr, Mo, W, Au, ITO, RuO 2, ZnO and NiO or its combination.
Next, first knitting layer 31 and second knitting layer 32 with the metallic bond layer on the upper surface of this heat sink substrate 13 engages respectively with the reflector 41 and the electrode layer 45 of this naked core.The method of above-mentioned joint for example can be selected from ultrasonic heat platen press, eutectic welding, vacuum hot-pressing, Reflow Soldering connection.
Then, for example remove substrate 46 by methods such as chemical etching, grinding or laser lift-offs.Next, form protective layer 5 has removed the naked core 4 of substrate 46 with covering upper surface and side.Promptly this protective layer 5 coats n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42, reflector 41 and the electrode layer 45 of this naked core.The material of this protective layer 5 for example is selected from elargol, epoxy resin, spin-coating glass, silica gel, the AB glue that contains fluorescent material or its combination.The reflectivity of this protective layer 5 helps to reduce as the n type semiconductor layer 44 of exiting surface and the light loss that total reflection caused between the air between the reflectivity of air and n type semiconductor layer 44.In order to reduce because as the light loss that total reflection caused between the interface of the n type semiconductor layer 44 of exiting surface and protective layer 5; preferably after having removed Semiconductor substrate 46 and before the formation protective layer 5; adopt for example method such as photoetching, etching, with the surface roughening of the n type semiconductor layer 44 that exposes to form surface coarsening layer 6.And then n type semiconductor layer 44, luminescent layer 43, p type semiconductor layer 42 and the electrode layer 45 of formation protective layer 5 to coat this naked core.
Certainly in the present embodiment, also above-mentioned first bonding land 31 can be made as and comprise many little bonding lands and each little knitting layer end connected and to the extension that is connected with circumscripted power line of being used for of above-mentioned naked core 4 one side extensions, above-mentioned second knitting layer 32 comprise many little knitting layer peripheries that are arranged on above-mentioned first bonding land and corresponding to many continuous little knitting layers of the other end of the above-mentioned first knitting layer extension.And will partly be provided with at each little knitting layer of corresponding second bonding land on the n type semiconductor layer 44 and separate the electrode layer 45 of arranging about being with above-mentioned reflector 41, p type semiconductor layer 42, luminescent layer 43.The left and right sides composition that is to say above-mentioned metallic bond layer 3 arrange and naked core 4 on separate about reflector 41, p type semiconductor layer 42, luminescent layer 43 and the electrode layer 45 of closed assembly and arrange to come as the case may be calmly.
Though specifically show and described the present invention with reference to embodiment; yet those having ordinary skill in the art will appreciate that; do not breaking away under the situation of the spirit and scope of the present invention that define by claim; can make the different variations on form and the details, and these variations will drop within protection scope of the present invention.

Claims (32)

1, a kind of light-emitting diode chip for backlight unit, comprise heat sink substrate (1), be arranged on metallic bond layer (3) and the naked core (4) of device above described heat sink substrate (1) on this heat sink substrate (1), wherein, described naked core (4) comprising: n type semiconductor layer (44) reaches the luminescent layer (43) that is superimposed on successively on this n type semiconductor layer (44), p type semiconductor layer (42), reflector (41) and be formed at electrode layer (45) on the described n type semiconductor layer (44), it is characterized in that: described metallic bond layer (3) comprises first knitting layer (31) and second knitting layer (32) that also can be connected with circumscripted power line that is arranged at described heat sink substrate (1) upper surface separately, and described first knitting layer (31) engages with described reflector (41), described second knitting layer (32) engages with described electrode layer (45), described heat sink substrate (1) is made as insulated part to the contact portion of its upper surface of major general and metallic bond layer (3), and described naked core (4) forms the current path that thermoelectricity separates by described first knitting layer (31) and second knitting layer (32) and being connected of circumscripted power line.
2, light-emitting diode chip for backlight unit according to claim 1 is characterized in that the insulation board of above-mentioned heat sink substrate (1) for being made by insulating material.
3, light-emitting diode chip for backlight unit according to claim 1 is characterized in that above-mentioned heat sink substrate (1) is for the base plate (12) made by electric conducting material and be positioned at being used on the described base plate (12) insulating barrier (11) that this base plate (12) and above-mentioned metallic bond layer (3) are isolated is formed.
4, light-emitting diode chip for backlight unit according to claim 3, it is characterized in that above-mentioned first knitting layer (31) comprises the circular middle body (301) that is positioned at above-mentioned heat sink substrate (1) upper surface and being used for of extending is connected with circumscripted power line extension (302) and bonding wire partly (303) from the above-mentioned naked core of a side direction (4) of this circle middle body (301) outside, above-mentioned second knitting layer (32) be incomplete encirclement shape be centered around first knitting layer (31) around, above-mentioned reflector (41), p type semiconductor layer (42), luminescent layer (43) is circular and corresponding closed assembly engages in the middle body of said n type semiconductor layer (44) and with the circular middle body of above-mentioned first bonding land (31), above-mentioned electrode layer (45) be formed at said n type semiconductor layer (44) around and with above-mentioned reflector (41), p type semiconductor layer (42), luminescent layer (43) is separate, and the position of corresponding above-mentioned first knitting layer (31) extension of described electrode layer (45) (302) has the notch (47) that prevents short circuit.
5, light-emitting diode chip for backlight unit according to claim 4, the circular middle body (301) that it is characterized in that above-mentioned first knitting layer (31) is for being convexly set in the round boss of above-mentioned heat sink substrate (1) upper surface.
6,, it is characterized in that above-mentioned electrode layer (45) equates with distance between the reflector that is stacked (41), p type semiconductor layer (42), the luminescent layer (43) according to claim 4 or 5 described light-emitting diode chip for backlight unit.
7, light-emitting diode chip for backlight unit according to claim 3, it is characterized in that above-mentioned first knitting layer (31) and second knitting layer (32) are a left side, be distributed on the above-mentioned heat sink substrate (1) to right arrangement, above-mentioned reflector (41), p type semiconductor layer (42), luminescent layer (43) closed assembly is in the position that said n type semiconductor layer (44) goes up corresponding first knitting layer (31), above-mentioned electrode layer (45) be formed at said n type semiconductor layer (44) go up corresponding second knitting layer (32) the position and with above-mentioned reflector (41), p type semiconductor layer (42), luminescent layer (43) is separate.
8, light-emitting diode chip for backlight unit according to claim 3, many naked cores (4) are equipped with in the top that it is characterized in that above-mentioned heat sink substrate (1), and above-mentioned first knitting layer (31) and second knitting layer (32) are alternate interspersed setting at the upper surface of above-mentioned heat sink substrate (1) and constitute a plurality of and the corresponding conductive region of naked core (4).
9, the same n type semiconductor layer (44) that takes shape in light-emitting diode chip for backlight unit according to claim 8, reflector (41), p type semiconductor layer (42) and luminescent layer (43), the electrode layer (45) that it is characterized in that above-mentioned each naked core (4) goes up and forms high-power naked core structure.
10, light-emitting diode chip for backlight unit according to claim 9, it is characterized in that above-mentioned first knitting layer (31) comprises many little knitting layers (311) and the little knitting layer of each bar (311) end connected and that above-mentioned second knitting layer (32) comprises many be arranged on above-mentioned little knitting layer (311) periphery and continuous many little knitting layers (321) in an end to the extension (314) and the bonding wire part (313) that are connected with circumscripted power line of being used for of above-mentioned naked core (4) one side extensions.
11, light-emitting diode chip for backlight unit according to claim 10, the little knitting layer (311) that it is characterized in that above-mentioned first knitting layer (31) is provided with a plurality of Metal Contact boss (312) that are matrix distribution, the reflector (41) of above-mentioned each naked core (4), p type semiconductor layer (42), luminescent layer (43) correspondingly is formed at Metal Contact boss (312) part that n type semiconductor layer (44) goes up corresponding each little knitting layer (311), the electrode layer (45) of above-mentioned each naked core (4) be centered around little knitting layer (311) and Metal Contact boss (312) peripheral part and with above-mentioned reflector (41), p type semiconductor layer (42), luminescent layer (43) is separate, above-mentioned each naked core (4) is connected on the above-mentioned heat sink substrate (1) with docking of described Metal Contact boss (312) and second knitting layer (32) respectively by its reflector (41) and electrode layer (45), and extension (314) position of the corresponding little knitting layer of each bar of above-mentioned electrode layer (45) (311) has the notch (47) that prevents short circuit.
12, light-emitting diode chip for backlight unit according to claim 9, it is characterized in that above-mentioned second knitting layer (32) comprises many little knitting layers (321) and the little knitting layer of each bar (321) end connected and be used for the bonding wire that is connected with circumscripted power line partly (323) to above-mentioned naked core (4) one side extensions, above-mentioned first knitting layer (31) comprises that many are arranged on peripheral and many little knitting layers (311) that an end links to each other of above-mentioned little knitting layer (321), the reflector (41) of above-mentioned each naked core (4), p type semiconductor layer (42), the n type semiconductor layer (44) that correspondingly is formed at luminescent layer (43) goes up the part of corresponding each little knitting layer (311), the electrode layer (45) of above-mentioned each naked core (4) be formed at that corresponding n type semiconductor layer (44) goes up corresponding each little knitting layer (321) part and with above-mentioned reflector (41), p type semiconductor layer (42), luminescent layer (43) forms separate left and right sides distributed architecture.
13, light-emitting diode chip for backlight unit according to claim 1 is characterized in that also being provided with on the above-mentioned naked core (4) protective layer (5) of the upper surface that is coated on said n type semiconductor layer (44) at least.
14, light-emitting diode chip for backlight unit according to claim 13 is characterized in that above-mentioned protective layer (5) serves as reasons its refractive index between air and n N-type semiconductor N Refractive indexBetween material make.
15, light-emitting diode chip for backlight unit according to claim 13 is characterized in that being provided with surface coarsening layer (6) between the upper surface of said n type semiconductor layer (44) and the protective layer (5).
16, light-emitting diode chip for backlight unit according to claim 3 is characterized in that being provided with between the upper surface of above-mentioned heat sink substrate (1) and the above-mentioned metallic bond layer (3) the static discharge layer (2) that is flush-mounted in heat sink substrate (1) middle part.
17, a kind of preparation method of light-emitting diode chip for backlight unit is characterized in that may further comprise the steps:
(1), the preparation upper surface is the heat sink substrate (1) of insulating barrier, upper surface at this heat sink substrate (1) plates metallic bond layer (3) then, and first knitting layer (31) and second knitting layer (32) that this metallic bond layer (3) are patterned into be isolated from each other, wherein, described first knitting layer (31) comprises circular middle body (301) and the extension (312) that is connected with circumscripted power line from an epitaxial lateral overgrowth of this middle body (301) being used for of stretching and bonding wire partly (313), and described second knitting layer (32) is the location about that incomplete encirclement shape is centered around first knitting layer (31);
(2), preparation naked core (4), this naked core (4) comprises substrate (46), be formed at the n type semiconductor layer (44) on this substrate (46), the corresponding luminescent layer (43) that is formed at the middle body of this n type semiconductor layer (44), be formed at the p type semiconductor layer (42) on this luminescent layer (43), be formed at the reflector (41) on this p type semiconductor layer (42) and be formed at this n type semiconductor layer (44) peripheral part and with above-mentioned reflector (41), p type semiconductor layer (42), the electrode layer (45) that luminescent layer (43) is separate, and corresponding above-mentioned first knitting layer (31) of described electrode layer (45) extension position has the notch (47) that prevents short circuit current;
(3), with the reflector (41) of naked core (4) and electrode layer (45) respectively with first knitting layer (31) of heat sink substrate (1) upper surface metallic bond layer (3) with second knitting layer (32) engages and make naked core (4) upside-down mounting on heat sink substrate (1);
(4), remove the substrate (46) of this naked core (4).
18, preparation method according to the described light-emitting diode chip for backlight unit of claim 17, it is characterized in that in above-mentioned steps (), the preparation upper surface is that the method for the heat sink substrate (1) of insulating barrier is: make the base plate (12) of heat sink substrate (1) with electric conducting material earlier, and then on this base plate (12), be inlaid with the static discharge layer (2) of two Zener diodes, go up at static discharge layer (2) again and apply oxidation-resistant film or anticorrosive film, form insulating barrier (11) at base plate (12) upper surface then, next on the upper surface of static discharge layer (2) and insulating barrier (11), form metallic bond layer (3) again, and this metallic bond layer (3) is patterned into first bonding land (31) and second bonding land (32) that are isolated from each other, and above-mentioned first bonding land (31) is centered around the peripheral position of described each little bonding land (321) along insulating barrier (11).
19,, it is characterized in that in above-mentioned steps (four) protective mulch (5) again on the naked core (4) that has removed substrate (46) according to the preparation method of the described light-emitting diode chip for backlight unit of claim 17.
20, according to the preparation method of the described light-emitting diode chip for backlight unit of claim 19; it is characterized in that afterwards at the substrate that removes above-mentioned naked core (4) (46); the upper surface roughening of wanting earlier the n type semiconductor layer (44) that will expose coats protective layer (5) in the upper surface and the side of n type semiconductor layer (44) again to form surface coarsening layer (6).
21, a kind of preparation method of light-emitting diode chip for backlight unit is characterized in that may further comprise the steps:
(1), the preparation upper surface has the heat sink substrate (1) of insulating barrier, upper surface at this heat sink substrate (1) plates metallic bond layer (3) then, and first knitting layer (31) that this metallic bond layer (3) is patterned into be formed at the left side and be formed at second knitting layer (32) on the right, first knitting layer (31) and second knitting layer (32) are isolated from each other;
(2), preparation naked core (4), this naked core (4) comprises substrate (46), be formed at n type semiconductor layer (44) on this substrate (46), be formed at the left-hand component of this n type semiconductor layer (44) luminescent layer (43), be formed at p type semiconductor layer (42) on this luminescent layer (43), be formed at the reflector (41) on this p type semiconductor layer (42) and be formed on the right-hand component of this n type semiconductor layer (42) and with described reflector (41), p type semiconductor layer (42), the separate electrode layer (45) of luminescent layer (43);
(3), with the reflector (41) of naked core (4) and electrode layer (45) respectively with first knitting layer (31) of heat sink substrate (1) upper surface metallic bond layer (3) with second knitting layer (32) engages and make naked core (4) upside-down mounting on heat sink substrate (1);
(4), remove the substrate (46) of this naked core (4).
22, preparation method according to the described light-emitting diode chip for backlight unit of claim 21, it is characterized in that in above-mentioned steps (), the method that the preparation upper surface has the heat sink substrate (1) of insulating barrier is: make the base plate (12) of heat sink substrate (1) with electric conducting material earlier, and then on this base plate (12), be inlaid with the static discharge layer (2) of two Zener diodes, go up at static discharge layer (2) again and apply oxidation-resistant film or anticorrosive film, form insulating barrier (11) at base plate (12) upper surface then, next on the upper surface of static discharge layer (2) and insulating barrier (11), form metallic bond layer (3) again, and this metallic bond layer (3) is patterned into first bonding land (31) and second bonding land (32) that are isolated from each other.
23,, it is characterized in that in above-mentioned steps (four) protective mulch (5) again on the naked core (4) that has removed substrate (46) according to the preparation method of the described light-emitting diode chip for backlight unit of claim 21.
24, according to the preparation method of the described light-emitting diode chip for backlight unit of claim 23; it is characterized in that afterwards at the substrate that removes above-mentioned naked core (4) (46); the upper surface roughening of wanting earlier the n type semiconductor layer (44) that will expose coats protective layer (5) in the upper surface and the side of n type semiconductor layer (44) again to form surface coarsening layer (6).
25, a kind of preparation method of light-emitting diode chip for backlight unit is characterized in that may further comprise the steps:
(1), the preparation upper surface has the heat sink substrate (1) of insulating barrier, upper surface at this heat sink substrate (1) plates metallic bond layer (3) then, and this metallic bond layer (3) is patterned into be isolated from each other and first knitting layer (31) and second knitting layer (32) of alternate interspersed setting, wherein above-mentioned first bonding land (31) comprises many little bonding lands (311) and each little knitting layer (311) end connected and is used for the extension (314) that is connected with circumscripted power line and bonding wire partly (313) to above-mentioned naked core (4) one side extensions, and little knitting layer (311) is provided with a plurality of circular metals contact boss (312) that are matrix distribution, and above-mentioned second knitting layer (32) comprises that many are arranged on peripheral and many little knitting layers (321) that link to each other corresponding to the other end of above-mentioned first knitting layer (31) extension (314) of above-mentioned little knitting layer (311);
(2), prepare high-power naked core (4): on substrate (46), form earlier n type semiconductor layer (44), luminescent layer (43), p type semiconductor layer (42) successively, method by liquid or laser-induced thermal etching forms the corresponding luminescence unit of a plurality of and above-mentioned Metal Contact boss (312) then, go up in the p of each luminescence unit type semiconductor layer (42) again and form reflector (41), and upward on peripheral part of luminescence unit, form the electrode layer of separating with luminescence unit (45) in n type semiconductor layer (44);
(3), with each reflector (41) of naked core (4) and electrode layer (45) respectively with the Metal Contact boss (312) of first knitting layer (31) with second knitting layer (32) engages and make naked core (4) upside-down mounting on heat sink substrate (1);
(4), remove the substrate (46) of this naked core (4).
26, preparation method according to the described light-emitting diode chip for backlight unit of claim 25, it is characterized in that in above-mentioned steps (), the method that the preparation upper surface has the heat sink substrate (1) of insulating barrier is: make the base plate (12) of heat sink substrate (1) with electric conducting material earlier, and then on this base plate (12), be inlaid with the static discharge layer (2) of two Zener diodes, go up at static discharge layer (2) again and apply oxidation-resistant film or anticorrosive film, form insulating barrier (11) at base plate (12) upper surface then, next on the upper surface of static discharge layer (2) and insulating barrier (11), form metallic bond layer (3) again, and this metallic bond layer (3) is patterned into is isolated from each other and alternate interspersed first bonding land (31) and second bonding land (32).
27,, it is characterized in that in above-mentioned steps (four) protective mulch (5) again on the naked core (4) that has removed substrate (46) according to the preparation method of the described light-emitting diode chip for backlight unit of claim 25.
28, according to the preparation method of the described light-emitting diode chip for backlight unit of claim 25; it is characterized in that afterwards at the substrate that removes above-mentioned naked core (4) (46); the upper surface roughening of wanting earlier the n type semiconductor layer (44) that will expose coats protective layer (5) in the upper surface and the side of n type semiconductor layer (44) again to form surface coarsening layer (6).
29, a kind of preparation method of light-emitting diode chip for backlight unit is characterized in that may further comprise the steps:
(1), the preparation upper surface has the heat sink substrate (1) of insulating barrier, upper surface at this heat sink substrate (1) plates metallic bond layer (3) then, and this metallic bond layer (3) is patterned into be isolated from each other and first knitting layer (31) and second knitting layer (32) of alternate interspersed setting, wherein above-mentioned second bonding land (32) comprises many little bonding lands (321) and each end, little bonding land (321) connected and to the bonding wire part (323) that is connected with circumscripted power line of being used for of above-mentioned naked core (4) one side extensions, above-mentioned first knitting layer (31) comprise many be arranged on above-mentioned little knitting layer (321) peripheral and corresponding to continuous many little knitting layers (311) in the other end of above-mentioned second knitting layer (32) extension;
(2), prepare high-power naked core (4): on substrate (46), form earlier n type semiconductor layer (44) successively, luminescent layer (43), p type semiconductor layer (42), method by liquid or laser-induced thermal etching makes luminescent layer (43) and p type semiconductor layer (42) form many and the corresponding luminescence unit in above-mentioned little bonding land (311) then, go up in the p of each luminescence unit type semiconductor layer (42) again and form reflector (41), go up corresponding each little knitting layer (321) part in n type semiconductor layer (44) then and be provided with and above-mentioned reflector (41), p type semiconductor layer (42), about being, separates by luminescent layer (43) electrode layer (45) of arranging;
(3), each reflector (41) of high-power naked core (4) and electrode layer (45) are engaged with the little bonding land (321) of the little bonding land (311) of first knitting layer (31) and second knitting layer (32) respectively and make high-power naked core (4) upside-down mounting on heat sink substrate (1);
(4), remove the substrate (46) of this naked core (4).
30, preparation method according to the described light-emitting diode chip for backlight unit of claim 29, it is characterized in that in above-mentioned steps (), the preparation upper surface has the method for the heat sink substrate (1) of insulating barrier to be: make the base plate (12) of heat sink substrate (1) with electric conducting material earlier, and then on this base plate (12), be inlaid with the static discharge layer (2) of two Zener diodes, go up at static discharge layer (2) again and apply oxidation-resistant film or anticorrosive film, form insulating barrier (11) at base plate (12) upper surface then, next on the upper surface of static discharge layer (2) and insulating barrier (11), form metallic bond layer (3) again, and this metallic bond layer (3) is patterned into is isolated from each other and alternate interspersed first bonding land (31) and second bonding land (32).
31,, it is characterized in that in above-mentioned steps (four) protective mulch (5) again on the naked core (4) that has removed substrate (46) according to the preparation method of the described light-emitting diode chip for backlight unit of claim 29.
32, according to the preparation method of the described light-emitting diode chip for backlight unit of claim 29; it is characterized in that afterwards at the substrate that removes above-mentioned naked core (4) (46); the upper surface roughening of wanting earlier the n type semiconductor layer (44) that will expose coats protective layer (5) in the upper surface and the side of n type semiconductor layer (44) again to form surface coarsening layer (6).
CN200910160996A 2008-07-30 2009-07-29 A kind of light-emitting diode chip for backlight unit and preparation method thereof Pending CN101615611A (en)

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