GB2540299B - Vertical LED array element integrating LED epitaxial structures with LED package substrate - Google Patents

Vertical LED array element integrating LED epitaxial structures with LED package substrate

Info

Publication number
GB2540299B
GB2540299B GB1617443.5A GB201617443A GB2540299B GB 2540299 B GB2540299 B GB 2540299B GB 201617443 A GB201617443 A GB 201617443A GB 2540299 B GB2540299 B GB 2540299B
Authority
GB
United Kingdom
Prior art keywords
led
package substrate
array element
epitaxial structures
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1617443.5A
Other versions
GB201617443D0 (en
GB2540299A (en
Inventor
Shyan Chen Jen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Enraytek Optoelectronics Co Ltd
Original Assignee
Enraytek Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Enraytek Optoelectronics Co Ltd filed Critical Enraytek Optoelectronics Co Ltd
Publication of GB201617443D0 publication Critical patent/GB201617443D0/en
Publication of GB2540299A publication Critical patent/GB2540299A/en
Application granted granted Critical
Publication of GB2540299B publication Critical patent/GB2540299B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
GB1617443.5A 2014-04-29 2014-04-29 Vertical LED array element integrating LED epitaxial structures with LED package substrate Expired - Fee Related GB2540299B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2014/076510 WO2015165048A1 (en) 2014-04-29 2014-04-29 Vertical led array element integrating led epitaxial structures with led package substrate

Publications (3)

Publication Number Publication Date
GB201617443D0 GB201617443D0 (en) 2016-11-30
GB2540299A GB2540299A (en) 2017-01-11
GB2540299B true GB2540299B (en) 2018-04-11

Family

ID=54358008

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1617443.5A Expired - Fee Related GB2540299B (en) 2014-04-29 2014-04-29 Vertical LED array element integrating LED epitaxial structures with LED package substrate

Country Status (3)

Country Link
DE (1) DE112014006625T5 (en)
GB (1) GB2540299B (en)
WO (1) WO2015165048A1 (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110316A1 (en) * 2002-11-20 2004-06-10 Mitsuhiko Ogihara Semiconductor device and method of manufacturing the same
CN101615611A (en) * 2008-07-30 2009-12-30 鹤山丽得电子实业有限公司 A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN101685841A (en) * 2008-09-26 2010-03-31 台达电子工业股份有限公司 Light emitting diode chip
US20110127554A1 (en) * 2009-12-02 2011-06-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
CN102456775A (en) * 2010-10-14 2012-05-16 晶元光电股份有限公司 Luminous element and manufacturing method thereof
CN102593284A (en) * 2012-03-05 2012-07-18 映瑞光电科技(上海)有限公司 Methods for manufacturing isolation deep trench and high voltage LED chip
CN102593275A (en) * 2011-01-13 2012-07-18 台湾积体电路制造股份有限公司 Method of fabricating light emitting diode package and light emitting diode thereof
CN103415935A (en) * 2011-03-14 2013-11-27 皇家飞利浦有限公司 Led having vertical contacts redistributed for flip chip mounting

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040110316A1 (en) * 2002-11-20 2004-06-10 Mitsuhiko Ogihara Semiconductor device and method of manufacturing the same
CN101615611A (en) * 2008-07-30 2009-12-30 鹤山丽得电子实业有限公司 A kind of light-emitting diode chip for backlight unit and preparation method thereof
CN101685841A (en) * 2008-09-26 2010-03-31 台达电子工业股份有限公司 Light emitting diode chip
US20110127554A1 (en) * 2009-12-02 2011-06-02 Samsung Electronics Co., Ltd. Light emitting device and method of manufacturing the same
CN102456775A (en) * 2010-10-14 2012-05-16 晶元光电股份有限公司 Luminous element and manufacturing method thereof
CN102593275A (en) * 2011-01-13 2012-07-18 台湾积体电路制造股份有限公司 Method of fabricating light emitting diode package and light emitting diode thereof
CN103415935A (en) * 2011-03-14 2013-11-27 皇家飞利浦有限公司 Led having vertical contacts redistributed for flip chip mounting
CN102593284A (en) * 2012-03-05 2012-07-18 映瑞光电科技(上海)有限公司 Methods for manufacturing isolation deep trench and high voltage LED chip

Also Published As

Publication number Publication date
GB201617443D0 (en) 2016-11-30
WO2015165048A1 (en) 2015-11-05
GB2540299A (en) 2017-01-11
DE112014006625T5 (en) 2017-02-09

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