CN105742437B - A kind of light-emitting diode chip for backlight unit and preparation method thereof - Google Patents
A kind of light-emitting diode chip for backlight unit and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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Abstract
The invention discloses a kind of light-emitting diode chip for backlight unit and preparation method thereof, belong to technical field of semiconductors.The light-emitting diode chip for backlight unit includes substrate and stacks gradually N-type layer, luminescent layer, P-type layer on substrate, P-type layer is equipped with the groove for extending to N-type layer, P-type layer is equipped with current barrier layer and transparency conducting layer, current barrier layer is equipped with P-type electrode, N-type layer is equipped with N-type electrode, current barrier layer SiO2The composite construction of layer and SiN layer, SiO2Layer and the composite construction of SiN layer include SiN layer and the SiO that is arranged in SiN layer2Layer or SiO2Layer and the composite construction of SiN layer include SiO2Layer and setting are in SiO2SiN layer or SiO on layer2Layer and the composite construction of SiN layer include SiO2Layer and it is plugged in SiO2The intermediate SiN layer of layer.The present invention improves the yield of LED chip.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of light-emitting diode chip for backlight unit and preparation method thereof.
Background technique
Light emitting diode (Light Emitting Diode, abbreviation LED) is a kind of semiconductor electronic component that can be luminous,
Have the characteristics that small in size, brightness is high, energy consumption is small, is widely used in display screen, backlight and lighting area.
LED chip is the core component of LED.Existing LED chip includes substrate and stacks gradually N on substrate
Type layer, luminescent layer, P-type layer, current barrier layer, transparency conducting layer, P-type electrode, P-type layer are equipped with the groove for extending to N-type layer,
N-type layer is equipped with N-type electrode.It is also provided with the isolation channel for extending to substrate in N-type layer, is equipped with insulating layer in isolation channel, absolutely
Edge layer is equipped with the connecting structure for electrical equipment of connection P-type electrode and N-type electrode.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
Current barrier layer and insulating layer usually all use SiO2It realizes, due to SiO2Insulating properties and stability be weak, make
Yield at existing LED chip is undesirable.
Summary of the invention
Yield in order to solve the problems, such as prior art LED chip is undesirable, and the embodiment of the invention provides one kind to shine
Diode chip for backlight unit and preparation method thereof.The technical solution is as follows:
In a first aspect, the embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes
Substrate and N-type layer, luminescent layer, P-type layer over the substrate are stacked gradually, the P-type layer is equipped with and extends to the N
The groove of type layer, the P-type layer are equipped with current barrier layer and transparency conducting layer, and the current barrier layer is equipped with P-type electrode,
The N-type layer is equipped with N-type electrode, and the current barrier layer is SiO2The composite construction of layer and SiN layer, the SiO2Layer and SiN
The composite construction of layer includes SiN layer and the SiO that is arranged in the SiN layer2Layer or the SiO2Layer is answered with SiN layer
Closing structure includes SiO2Layer and setting are in the SiO2SiN layer or the SiO on layer2The composite construction of layer and SiN layer
Including SiO2Layer and it is plugged in the SiO2The intermediate SiN layer of layer；
The N-type layer is equipped with the isolation channel for extending to the substrate, is equipped with insulating layer, the insulation in the isolation channel
Layer is equipped with the connecting structure for electrical equipment for connecting the P-type electrode and the N-type electrode, and the insulating layer is the SiO2Layer and
The composite construction of SiN layer.
Optionally, the SiO2Layer with a thickness ofAs the SiO2Layer is arranged when in the SiN layer,
Or when the SiN layer is arranged in the SiO2When on layer, the SiN layer with a thickness ofWhen the SiN layer
It is plugged in the SiO2When layer is intermediate, the SiN layer with a thickness of
Second aspect is suitable for preparation the embodiment of the invention provides a kind of preparation method of light-emitting diode chip for backlight unit
On the one hand the light-emitting diode chip for backlight unit provided, the preparation method include:
N-type layer, luminescent layer, P-type layer are successively grown on substrate；
The groove for extending to the N-type layer is opened up in the P-type layer；
Current barrier layer and transparency conducting layer are set in the P-type layer, and the current barrier layer is SiO2Layer and SiN layer
Composite construction, the SiO2Layer and the composite construction of SiN layer include SiN layer and the SiO that is arranged in the SiN layer2Layer,
Or the SiO2Layer and the composite construction of SiN layer include SiO2Layer and setting are in the SiO2SiN layer on layer, Huo Zhesuo
State SiO2Layer and the composite construction of SiN layer include SiO2Layer and it is plugged in the SiO2The intermediate SiN layer of layer；
P-type electrode is set on the current barrier layer, N-type electrode is set in the N-type layer；
The preparation method further include:
The isolation channel for extending to the substrate is opened up in the N-type layer；
Insulating layer is set in the isolation channel, and the insulating layer is the SiO2The composite construction of layer and SiN layer；
Setting connects the connecting structure for electrical equipment of the P-type electrode and the N-type electrode on the insulating layer.
The third aspect, the embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes
Substrate and N-type layer, luminescent layer, P-type layer over the substrate are stacked gradually, the P-type layer is equipped with and extends to the N
The groove of type layer, the N-type layer are equipped with the isolation channel for extending to the substrate, are equipped with insulating layer, the P in the isolation channel
Type layer is equipped with P-type electrode, and the N-type layer is equipped with N-type electrode, and the insulating layer, which is equipped with, connects the P-type electrode and institute
The connecting structure for electrical equipment of N-type electrode is stated, the insulating layer is SiO2The composite construction of layer and SiN layer, the SiO2Layer and SiN layer
Composite construction include SiN layer and the SiO that is arranged in the SiN layer2Layer or the SiO2Layer is compound with SiN layer
Structure includes SiO2Layer and setting are in the SiO2SiN layer or the SiO on layer2The composite construction packet of layer and SiN layer
Include SiO2Layer and it is plugged in the SiO2The intermediate SiN layer of layer.
Optionally, the SiO2Layer with a thickness ofWhen the SiN layer is arranged in the P-type layer and institute
State SiO2When between layer, or when the SiO is arranged in the SiN layer2When between layer and the P-type electrode, the thickness of the SiN layer
Degree isWhen the SiN layer is plugged in the SiO2Layer centre when, the SiN layer with a thickness of
Optionally, the P-type layer is equipped with current barrier layer and transparency conducting layer, and the P-type electrode is arranged in the electricity
On flow barrier, the current barrier layer is the SiO2The composite construction of layer and SiN layer.
Fourth aspect is suitable for preparation the embodiment of the invention provides a kind of preparation method of light-emitting diode chip for backlight unit
The light-emitting diode chip for backlight unit that three aspects provide, the preparation method include:
N-type layer, luminescent layer, P-type layer are successively grown on substrate；
The groove for extending to the N-type layer is opened up in the P-type layer, and is opened up in the N-type layer and extended to the lining
The isolation channel at bottom；
Insulating layer is set in the isolation channel, and the insulating layer is SiO2The composite construction of layer and SiN layer, the SiO2
Layer and the composite construction of SiN layer include SiN layer and the SiO that is arranged in the SiN layer2Layer or the SiO2Layer and SiN
The composite construction of layer includes SiO2Layer and setting are in the SiO2SiN layer or the SiO on layer2Layer is answered with SiN layer
Closing structure includes SiO2Layer and it is plugged in the SiO2The intermediate SiN layer of layer；
P-type electrode is set in the P-type layer, forms N-type electrode in the N-type layer, is arranged on the insulating layer
Connect the connecting structure for electrical equipment of the P-type electrode and the N-type electrode.
It is optionally, described that P-type electrode is set in the P-type layer, comprising:
Current barrier layer and transparency conducting layer are set in the P-type layer, and the current barrier layer is the SiO2Layer and
The composite construction of SiN layer；
P-type electrode is set on the current barrier layer.
Technical solution provided in an embodiment of the present invention has the benefit that
It is SiO by least one of current barrier layer and insulating layer2The composite construction of layer and SiN layer, due to SiN layer
With compact structure, pinhold density is small, chemical stability is good, high dielectric constant, high insulation is slight, electric leakage is low, has to steam
The characteristics of good barrier ability, therefore the insulating properties and stability of current barrier layer and insulating layer are improved, and then improve LED
The yield of chip.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of structural schematic diagram for light-emitting diode chip for backlight unit that the embodiment of the present invention one provides；
Fig. 2 a- Fig. 2 c is the SiO that the embodiment of the present invention one provides2The structural schematic diagram of layer and the composite construction of SiN layer；
Fig. 3 is a kind of flow chart of the preparation method of light-emitting diode chip for backlight unit provided by Embodiment 2 of the present invention；
Fig. 4 a- Fig. 4 e is the LED chip provided by Embodiment 2 of the present invention during current barrier layer is arranged in P-type layer
Structural schematic diagram；
Fig. 5 is a kind of structural schematic diagram for light-emitting diode chip for backlight unit that the embodiment of the present invention three provides；
Fig. 6 is a kind of flow chart of the preparation method for light-emitting diode chip for backlight unit that the embodiment of the present invention four provides.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, and referring to Fig. 1, which includes substrate
1 and the N-type layer 2, luminescent layer 3, the P-type layer 4 that are sequentially laminated on substrate 1, P-type layer 4 be equipped with the groove for extending to N-type layer 2
10, P-type layer 4 is equipped with current barrier layer 5 and transparency conducting layer 6, and current barrier layer 5 is equipped with P-type electrode 7, sets in N-type layer 2
There is N-type electrode 8.
In the present embodiment, current barrier layer SiO2The composite construction of layer and SiN layer.A referring to fig. 2, SiO2Layer and SiN
The composite construction of layer may include SiN layer 100 and the SiO that is arranged in SiN layer 1002Layer 200.B referring to fig. 2, SiO2Layer and
The composite construction of SiN layer also may include SiO2Layer 200 and setting are in SiO2SiN layer 100 on layer 200.C referring to fig. 2,
SiO2Layer and the composite construction of SiN layer include SiO2Layer 200 and is plugged in SiO2SiN layer 100 among layer 200.
Optionally, SiO2Layer thickness can be
Preferably, when SiN layer is plugged in SiO2When layer is intermediate, the SiO of SiN layer two sides2The thickness of layer can be equal.
Optionally, work as SiO2Layer is arranged when in SiN layer, and the thickness of SiN layer can beWhen SiN layer is set
It sets in SiO2When on layer, the thickness of SiN layer can beWhen SiN layer is plugged in SiO2When layer is intermediate, SiN layer
Thickness can beIt is demonstrated experimentally that when the thickness of SiN layer meets aforementioned range, the insulating properties of current barrier layer
It is preferable with stability.
In a kind of implementation of the present embodiment, N-type layer is equipped with the isolation channel for extending to substrate, is equipped in isolation channel
Insulating layer, insulating layer are equipped with the connecting structure for electrical equipment of connection P-type electrode and N-type electrode, insulating layer SiO2Layer and SiN layer
Composite construction.
Specifically, substrate 1 can be Sapphire Substrate, and N-type layer 2 can be N-type GaN layer, and luminescent layer 3 may include alternating
The InGaN layer and GaN layer of formation, P-type layer 4 can be p-type GaN layer, and transparency conducting layer 6 can be tin indium oxide (Indium
Tin Oxides, abbreviation ITO) layer.
The embodiment of the present invention is SiO by current barrier layer2The composite construction of layer and SiN layer, since SiN layer has structure
It is fine and close, pinhold density is small, chemical stability is good, high dielectric constant, high insulation is slight, electric leakage is low, has good barrier to steam
The characteristics of ability, therefore the insulating properties and stability of current barrier layer are improved, and then improve the yield of LED chip.
Embodiment two
The embodiment of the invention provides a kind of preparation methods of light-emitting diode chip for backlight unit, are suitable for preparation embodiment one and provide
Light-emitting diode chip for backlight unit, referring to Fig. 3, which includes:
Step 201: successively growing N-type layer, luminescent layer, P-type layer on substrate.
Specifically, substrate can be Sapphire Substrate, and N-type layer can be N-type GaN layer, and luminescent layer may include alternating shape
At InGaN layer and GaN layer, P-type layer can be p-type GaN layer.
Step 202: the groove for extending to N-type layer is opened up in P-type layer.
Step 203: current barrier layer and transparency conducting layer are set in P-type layer.
Specifically, transparency conducting layer can be ITO layer.
In the present embodiment, current barrier layer SiO2The composite construction of layer and SiN layer, SiO2The composite junction of layer and SiN layer
Structure includes SiN layer and the SiO that is arranged in SiN layer2Layer or SiO2Layer and the composite construction of SiN layer include SiO2Layer, with
And it is arranged in SiO2SiN layer or SiO on layer2Layer and the composite construction of SiN layer include SiO2Layer and it is plugged in SiO2Layer
Intermediate SiN layer.
Optionally, SiO2Layer thickness can be
Preferably, when SiN layer is plugged in SiO2When layer is intermediate, the SiO of SiN layer two sides2The thickness of layer can be equal.
Optionally, work as SiO2Layer is arranged when in SiN layer, and the thickness of SiN layer can beWhen SiN layer is set
It sets in SiO2When on layer, the thickness of SiN layer can beWhen SiN layer is plugged in SiO2When layer is intermediate, SiN layer
Thickness can beIt is demonstrated experimentally that when the thickness of SiN layer meets aforementioned range, the insulating properties of current barrier layer
It is preferable with stability.
Optionally, current barrier layer is set in P-type layer, may include:
The deposition current barrier layer in P-type layer and N-type layer；
Photoresist is coated on current barrier layer；
Photoresist is exposed and is developed, the photoresist of setting figure is formed；
Under the protection of photoresist, current barrier layer is etched；
Remove photoresist.
Fig. 4 a- Fig. 4 e is the structural schematic diagram of LED chip during current barrier layer is arranged in P-type layer.Specifically,
Fig. 4 a is the structural schematic diagram of the LED chip in P-type layer and N-type layer behind deposition current barrier layer, and Fig. 4 b is in current blocking
The structural schematic diagram of the LED chip after photoresist is coated on layer, Fig. 4 c is the LED chip after photoresist is exposed and is developed
Structural schematic diagram, Fig. 4 d be etch current barrier layer after LED chip structural schematic diagram, Fig. 4 e be removal photoresist after
The structural schematic diagram of LED chip.Wherein, 1 is substrate, and 2 be N-type layer, and 3 be luminescent layer, and 4 be P-type layer, and 5 be current barrier layer, 50
It is groove for photoresist, 10.
Preferably, the deposition current barrier layer in P-type layer and N-type layer may include:
Using plasma enhances chemical vapor deposition (Plasma Enhanced Chemical Vapor
Deposition, abbreviation PECVD) equipment deposition current barrier layer in P-type layer and N-type layer.
Preferably, current barrier layer is etched, may include:
Current barrier layer is lost using chemical solution or physics plasma etch machine engraving.
Preferably, photoresist is removed, may include:
Photoresist is removed using organic solvent.
Specifically, organic solvent can be N-Methyl pyrrolidone.
Step 204: P-type electrode being set on current barrier layer, N-type electrode is set in N-type layer.
In a kind of implementation of the present embodiment, which can also include:
The isolation channel for extending to substrate is opened up in N-type layer；
Insulating layer, insulating layer SiO are set in isolation channel2The composite construction of layer and SiN layer；
The connecting structure for electrical equipment of setting connection P-type electrode and N-type electrode on the insulating layer.
The embodiment of the present invention is SiO by current barrier layer2The composite construction of layer and SiN layer, since SiN layer has structure
It is fine and close, pinhold density is small, chemical stability is good, high dielectric constant, high insulation is slight, electric leakage is low, has good barrier to steam
The characteristics of ability, therefore the insulating properties and stability of current barrier layer are improved, and then improve the yield of LED chip.
Embodiment three
The embodiment of the invention provides a kind of light-emitting diode chip for backlight unit, and referring to Fig. 5, which includes substrate
1 and the N-type layer 2, luminescent layer 3, the P-type layer 4 that are sequentially laminated on substrate 1, P-type layer 4 be equipped with the groove for extending to N-type layer 2
10, N-type layer 2 is equipped with the isolation channel 20 for extending to substrate 1, and insulating layer 9 is equipped in isolation channel 20, and P-type layer 4 is equipped with p-type electricity
Pole 7, N-type layer 2 are equipped with N-type electrode 8, and insulating layer 9 is equipped with the connecting structure for electrical equipment 78 of connection P-type electrode 7 and N-type electrode 8.
In the present embodiment, insulating layer SiO2The composite construction of layer and SiN layer.SiO2The composite construction packet of layer and SiN layer
The SiO for including SiN layer and being arranged in SiN layer2Layer (as shown in Figure 2 a) or SiO2Layer and the composite construction of SiN layer include
SiO2Layer and setting are in SiO2SiN layer (as shown in Figure 2 b) or SiO on layer2Layer and the composite construction of SiN layer include
SiO2Layer and it is plugged in SiO2The intermediate SiN layer (as shown in Figure 2 c) of layer.
Optionally, SiO2Layer thickness can be
Preferably, when SiN layer is plugged in SiO2When layer is intermediate, the SiO of SiN layer two sides2The thickness of layer can be equal.
Optionally, work as SiO2Layer is arranged when in SiN layer, and the thickness of SiN layer can beWhen SiN layer is set
It sets in SiO2When on layer, the thickness of SiN layer can beWhen SiN layer is plugged in SiO2When layer is intermediate, SiN layer
Thickness can beIt is demonstrated experimentally that when the thickness of SiN layer meets aforementioned range, the insulating properties of current barrier layer
It is preferable with stability.
In a kind of implementation of the present embodiment, P-type layer is equipped with current barrier layer and transparency conducting layer, P-type electrode
It is arranged on current barrier layer, current barrier layer SiO2The composite construction of layer and SiN layer.
Specifically, substrate 1 can be Sapphire Substrate, and N-type layer 2 can be N-type GaN layer, and luminescent layer 3 may include alternating
The InGaN layer and GaN layer of formation, P-type layer 4 can be p-type GaN layer, and transparency conducting layer can be ITO layer.
The embodiment of the present invention is SiO by insulating layer2The composite construction of layer and SiN layer, since SiN layer is caused with structure
It is close, pinhold density is small, chemical stability is good, high dielectric constant, high insulation is slight, electric leakage is low, has good barrier energy to steam
The characteristics of power, therefore the insulating properties and stability of insulating layer are improved, and then improve the yield of LED chip.
Example IV
The embodiment of the invention provides a kind of preparation methods of light-emitting diode chip for backlight unit, are suitable for preparation embodiment three and provide
Light-emitting diode chip for backlight unit, referring to Fig. 6, which includes:
Step 401: successively growing N-type layer, luminescent layer, P-type layer on substrate.
Specifically, substrate can be Sapphire Substrate, and N-type layer can be N-type GaN layer, and luminescent layer may include alternating shape
At InGaN layer and GaN layer, P-type layer can be p-type GaN layer.
Step 402: opening up the groove for extending to N-type layer in P-type layer, and open up the isolation for extending to substrate in N-type layer
Slot.
Step 403: insulating layer is set in isolation channel.
In the present embodiment, insulating layer SiO2The composite construction of layer and SiN layer, SiO2The composite construction packet of layer and SiN layer
The SiO for including SiN layer and being arranged in SiN layer2Layer or SiO2Layer and the composite construction of SiN layer include SiO2Layer, Yi Jishe
It sets in SiO2SiN layer or SiO on layer2Layer and the composite construction of SiN layer include SiO2Layer and it is plugged in SiO2Layer is intermediate
SiN layer.
Optionally, SiO2Layer thickness can be
Preferably, when SiN layer is plugged in SiO2When layer is intermediate, the SiO of SiN layer two sides2The thickness of layer can be equal.
Optionally, work as SiO2Layer is arranged when in SiN layer, and the thickness of SiN layer can beWhen SiN layer is set
It sets in SiO2When on layer, the thickness of SiN layer can beWhen SiN layer is plugged in SiO2When layer is intermediate, SiN layer
Thickness can beIt is demonstrated experimentally that when the thickness of SiN layer meets aforementioned range, the insulating properties of current barrier layer
It is preferable with stability.
Specifically, which may include:
In P-type layer, depositing insulating layer in N-type layer and in isolation channel；
Photoresist is coated on the insulating layer；
Photoresist is exposed and is developed, the photoresist of setting figure is formed；
Under the protection of photoresist, etching insulating layer；
Remove photoresist.
Preferably, the depositing insulating layer in P-type layer, in N-type layer and in isolation channel may include:
Using PECVD device in P-type layer, in N-type layer and in isolation channel depositing insulating layer.
Preferably, etching insulating layer may include:
Using chemical solution or physics plasma etch machine etching insulating layer.
Preferably, photoresist is removed, may include:
Photoresist is removed using organic solvent.
Step 404: P-type electrode being set in P-type layer, forms N-type electrode in N-type layer, on the insulating layer setting connection P
The connecting structure for electrical equipment of type electrode and N-type electrode.
In a kind of implementation of the present embodiment, P-type electrode is set in P-type layer, may include:
Current barrier layer and transparency conducting layer, current barrier layer SiO are set in P-type layer2The composite junction of layer and SiN layer
Structure；
P-type electrode is set on current barrier layer.
Specifically, transparency conducting layer can be ITO layer.
The embodiment of the present invention is SiO by insulating layer2The composite construction of layer and SiN layer, since SiN layer is caused with structure
It is close, pinhold density is small, chemical stability is good, high dielectric constant, high insulation is slight, electric leakage is low, has good barrier energy to steam
The characteristics of power, therefore the insulating properties and stability of insulating layer are improved, and then improve the yield of LED chip.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (8)
1. a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes substrate and stacks gradually over the substrate
N-type layer, luminescent layer, P-type layer, the P-type layer, which is equipped with, extends to the groove of the N-type layer, and the P-type layer is equipped with electric current
Barrier layer and transparency conducting layer, the current barrier layer are equipped with P-type electrode, and the N-type layer is equipped with N-type electrode, feature
It is, the current barrier layer is SiO2The composite construction of layer and SiN layer, the SiO2Layer and the composite construction of SiN layer include
SiN layer and the SiO being arranged in the SiN layer2Layer or the SiO2Layer and the composite construction of SiN layer include SiO2Layer,
And it is arranged in the SiO2SiN layer or the SiO on layer2Layer and the composite construction of SiN layer include SiO2Layer and insert
It is located at the SiO2The intermediate SiN layer of layer；
The N-type layer, which is equipped with, extends to the isolation channel of the substrate, is equipped with insulating layer in the isolation channel, on the insulating layer
Equipped with the connecting structure for electrical equipment for connecting the P-type electrode and the N-type electrode, the insulating layer is the SiO2Layer and SiN layer
Composite construction.
2. light-emitting diode chip for backlight unit according to claim 1, which is characterized in that the SiO2Layer with a thickness ofAs the SiO2Layer is arranged when in the SiN layer, or when the SiN layer is arranged in the SiO2On layer
When, the SiN layer with a thickness ofWhen the SiN layer is plugged in the SiO2When layer is intermediate, the SiN layer
With a thickness of
3. a kind of preparation method of light-emitting diode chip for backlight unit is suitable for preparing light-emitting diodes tube core as claimed in claim 1 or 2
Piece, which is characterized in that the preparation method includes:
N-type layer, luminescent layer, P-type layer are successively grown on substrate；
The groove for extending to the N-type layer is opened up in the P-type layer；
Current barrier layer and transparency conducting layer are set in the P-type layer, and the current barrier layer is SiO2Layer is answered with SiN layer
Close structure, the SiO2Layer and the composite construction of SiN layer include SiN layer and the SiO that is arranged in the SiN layer2Layer, or
The SiO2Layer and the composite construction of SiN layer include SiO2Layer and setting are in the SiO2SiN layer or described on layer
SiO2Layer and the composite construction of SiN layer include SiO2Layer and it is plugged in the SiO2The intermediate SiN layer of layer；
P-type electrode is set on the current barrier layer, N-type electrode is set in the N-type layer；
The preparation method further include:
The isolation channel for extending to the substrate is opened up in the N-type layer；
Insulating layer is set in the isolation channel, and the insulating layer is the SiO2The composite construction of layer and SiN layer；
Setting connects the connecting structure for electrical equipment of the P-type electrode and the N-type electrode on the insulating layer.
4. a kind of light-emitting diode chip for backlight unit, the light-emitting diode chip for backlight unit includes substrate and stacks gradually over the substrate
N-type layer, luminescent layer, P-type layer, the P-type layer, which is equipped with, extends to the groove of the N-type layer, and the N-type layer, which is equipped with, to be extended
To the isolation channel of the substrate, it is equipped with insulating layer in the isolation channel, the P-type layer is equipped with P-type electrode, in the N-type layer
Equipped with N-type electrode, the insulating layer is equipped with the connecting structure for electrical equipment for connecting the P-type electrode and the N-type electrode, feature
It is, the insulating layer is SiO2The composite construction of layer and SiN layer, the SiO2Layer and SiN layer composite construction include SiN layer,
And the SiO in the SiN layer is set2Layer or the SiO2Layer and the composite construction of SiN layer include SiO2Layer, Yi Jishe
It sets in the SiO2SiN layer or the SiO on layer2Layer and the composite construction of SiN layer include SiO2Layer and it is plugged in institute
State SiO2The intermediate SiN layer of layer.
5. light-emitting diode chip for backlight unit according to claim 4, which is characterized in that the SiO2Layer with a thickness ofWhen the SiN layer is arranged in the P-type layer and the SiO2When between layer, or when the SiN layer is arranged
The SiO2Layer the P-type electrode between when, the SiN layer with a thickness ofWhen the SiN layer is plugged in
The SiO2Layer centre when, the SiN layer with a thickness of
6. light-emitting diode chip for backlight unit according to claim 4, which is characterized in that the P-type layer is equipped with current barrier layer
And transparency conducting layer, the P-type electrode are arranged on the current barrier layer, the current barrier layer is the SiO2Layer and
The composite construction of SiN layer.
7. a kind of preparation method of light-emitting diode chip for backlight unit is suitable for preparation such as claim 4-6 described in any item luminous two
Pole pipe chip, which is characterized in that the preparation method includes:
N-type layer, luminescent layer, P-type layer are successively grown on substrate；
The groove for extending to the N-type layer is opened up in the P-type layer, and is opened up in the N-type layer and extended to the substrate
Isolation channel；
Insulating layer is set in the isolation channel, and the insulating layer is SiO2The composite construction of layer and SiN layer, the SiO2Layer and
The composite construction of SiN layer includes SiN layer and the SiO that is arranged in the SiN layer2Layer or the SiO2Layer and SiN layer
Composite construction includes SiO2Layer and setting are in the SiO2SiN layer or the SiO on layer2The composite junction of layer and SiN layer
Structure includes SiO2Layer and it is plugged in the SiO2The intermediate SiN layer of layer；
P-type electrode is set in the P-type layer, forms N-type electrode in the N-type layer, connection is set on the insulating layer
The connecting structure for electrical equipment of the P-type electrode and the N-type electrode.
8. preparation method according to claim 7, which is characterized in that described that P-type electrode, packet are arranged in the P-type layer
It includes:
Current barrier layer and transparency conducting layer are set in the P-type layer, and the current barrier layer is the SiO2Layer and SiN layer
Composite construction；
P-type electrode is set on the current barrier layer.
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| CN102751410A (en) * | 2012-07-13 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | LED (Light Emitting Diode) chip provided with stepped current blocking structure and fabricating method thereof |
| CN102881785A (en) * | 2012-09-24 | 2013-01-16 | 华灿光电股份有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN103066192A (en) * | 2013-01-10 | 2013-04-24 | 李刚 | Semiconductor illuminating light source and method of manufacturing the same and semiconductor illuminating chip |
| CN204118107U (en) * | 2014-07-31 | 2015-01-21 | 华灿光电(苏州）有限公司 | A kind of light-emitting diode chip for backlight unit |
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| CN102751410A (en) * | 2012-07-13 | 2012-10-24 | 合肥彩虹蓝光科技有限公司 | LED (Light Emitting Diode) chip provided with stepped current blocking structure and fabricating method thereof |
| CN102881785A (en) * | 2012-09-24 | 2013-01-16 | 华灿光电股份有限公司 | Light-emitting diode chip and manufacturing method thereof |
| CN103066192A (en) * | 2013-01-10 | 2013-04-24 | 李刚 | Semiconductor illuminating light source and method of manufacturing the same and semiconductor illuminating chip |
| CN204118107U (en) * | 2014-07-31 | 2015-01-21 | 华灿光电(苏州）有限公司 | A kind of light-emitting diode chip for backlight unit |
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