JP6769881B2 - Chip scale package type light emitting device having a concave surface and its manufacturing method - Google Patents

Description

See citation of related application

This application claims the benefit and priority of Taiwan Patent Application No. 105100783 filed on January 12, 2016, and China Patent Application No. 201610033392.0 filed on January 19, 2016 claiming priority of the Taiwanese patent application. The entire disclosures of both applications are incorporated herein by reference.

background

Technical Field The present disclosure relates to a light emitting device and a method for manufacturing the same, and more particularly to a chip scale package type light emitting device including a light emitting diode (LED) semiconductor die that emits electromagnetic radiation during operation.
Description of related technology

LEDs are widely used in various application fields including signal lights, backlight devices, general lighting fixtures, portable devices, automobile lighting and the like. Generally, the LED semiconductor die is arranged in a package structure such as a lead frame to form a package LED element. Further, a photoluminescent material such as a phosphor may be arranged and coated on the photoluminescent material to form a phosphor-converted white LED element.

The LED element is usually attached to the substrate by a bonding method such as reflow soldering or eutectic bonding, electrical energy is transmitted through the connection electrode of the application substrate, and the LED element can generate electromagnetic radiation during operation. ..

Recent developments in chip-scale package (CSP) LED devices are receiving more and more attention due to their promising advantages. As a typical example, a white light CSP type LED element is generally composed of a compact chip scale size blue light LED semiconductor die and a package structure covering the LED semiconductor die. Compared to leaded plastic chip carrier (PLCC) type LED devices, CSP light emitting devices show the following advantages. (1) By omitting the use of bonding wires and lead frames, the material cost is significantly reduced. (2) By not using a lead frame between the LED semiconductor die and the mounting board, which is usually a printed circuit board (PCB), the thermal resistance between the two is further reduced. Therefore, even if the drive current is the same, the operating temperature of the LED drops. In other words, even if the CSP type LED element consumes less electrical energy, more light output can be obtained. (3) Since the operating temperature is lower, the LED semiconductor quantum efficiency of the CSP type LED element becomes higher. (4) Since the shape coefficient of the light source is much smaller, the degree of freedom in designing the LED device at the module level is higher. (5) Since the light emitting region of the CSP type LED element is small and close to a point light source, the design of a secondary optical device becomes easy. Since the CSP type LED element is compact, it can be designed to emit a small amount of light with high light illuminance for projection type lighting such as automobile headlights.

The CSP type LED element mainly consists of an LED semiconductor die and a package structure that covers the LED semiconductor die, but since it does not have a gold wire or a surface mount lead frame, it can be directly mounted on an application board such as a PCB. As a result, the electrodes of the flip-chip semiconductor die inside the CSP type LED element can be electrically connected to the connection electrodes of the application substrate. The electrodes of the flip-chip semiconductor die also perform another important function of transferring and dissipating the heat generated during the operation of the CSP type LED element to the application substrate. Since the LED semiconductor die is made of an inorganic material and the package structure is mainly made of an organic resin material to cover the LED semiconductor die, the organic package structure during the high temperature reflow soldering step or the eutectic joining step is thermally expanded. Is much larger than an inorganic LED semiconductor die. In particular, the package structure can expand more in the vertical direction than the LED semiconductor die, in other words, the package structure can expand more than the lower layer connecting substrate, and the electrodes inside the LED semiconductor die are in the lower layer. Since it is "lifted" from the connection board of the LED semiconductor die, a useless gap is generated between the LED semiconductor die and the application board connection electrode during the high temperature soldering / bonding process. Therefore, the CSP type LED element is not properly bonded on the substrate, and as a result, electrical connection is not possible. Other failure conditions include high LED power consumption due to high electrical connection resistance, or poor heat dissipation due to high thermal resistance, all of which are electrodes for connecting semiconductor dies to substrates. It happens because it cannot be welded well. Therefore, the efficiency and reliability of the entire CSP type LED element mounted on the application board are lowered.

To remedy the above problem, a possible solution is to place thick solder bumps, such as gold-tin bumps, under the electrodes of the CSP LED element to reduce the bottom surface of the CSP LED element package structure. It rises to a higher position, forming a margin between the bottom surface of the package structure and the underlying substrate. This extra gap is reserved for the thermal expansion of the package structure that occurs during the next soldering / joining process. In this way, the package structure of the CSP type LED element still inevitably expands vertically during soldering, but since it does not come into contact with the application substrate, the electrodes of the LED semiconductor die are forcibly lifted. It never leaves the application board. However, by adding thick soldering bumps, the material cost for manufacturing the CSP type LED element increases significantly, and the manufacturing yield of the joining process at the time of bump addition due to improper adjustment may decrease.

From this point of view, it is necessary to provide a solution that eliminates the above-mentioned drawbacks and promote the practical application using the CSP type LED element.

Overview

One of the objects according to some embodiments of the present disclosure is to provide a CSP type LED element and a method for manufacturing the CSP type LED element which can be reliably and easily bonded to a submount substrate or another application substrate. is there.

To achieve the above object, the CSP type LED element according to some embodiments of the present disclosure comprises an LED semiconductor die and a package structure. An LED semiconductor die is a flip-chip LED semiconductor die having a top surface, a substantially parallel and opposed bottom surface, an edge surface, and a set of electrodes. The edge surface is formed and stretched between the outer edge of the upper surface and the outer edge of the lower surface, and a set of electrodes is arranged on the lower surface of the LED semiconductor die. The package structure is arranged on the LED semiconductor die and covers the upper surface and the edge surface thereof, and the package structure includes an upper resin member and a lower resin member. The lower resin member covers the upper surface and the edge surface of the LED semiconductor die, and the upper resin member is arranged and stacked on the lower resin member. The bottom surface of the package structure bends upward to form a concave space below.

To achieve the above object, another CSP type LED element according to some embodiments of the present disclosure comprises an LED semiconductor die and a package structure. An LED semiconductor die is a flip-chip LED semiconductor die having an upper surface, a lower surface, an edge surface, and a set of electrodes. The edge surface is formed and stretched between the outer edge of the upper surface and the outer edge of the lower surface, and a set of electrodes is arranged on the lower surface of the LED semiconductor die. The package structure is composed of a single-layer resin member that covers the upper surface and the edge surface of the LED semiconductor die, and the bottom surface of the single-layer resin member bends upward to form a concave space below.

In order to achieve the above object, the method for manufacturing a CSP type LED element according to some embodiments of the present disclosure covers the upper surface and the edge surface of the flip chip LED semiconductor die with a resin member, and solidifies the resin material by heat curing. This includes forming a package structure having a bottom surface curved upward due to shrinkage of the resin member.

The CSP type LED device and the manufacturing method thereof of some embodiments of the present disclosure provide at least the following advantages. Since the package structure (resin member) of the CSP type LED element has a bottom surface curved upward to form a concave space underneath, the CSP type LED element is submounted using the reflow soldering method or the eutectic bonding method. When mounted on a substrate (or other application substrate), it heats the package structure to thermally expand and deform the bottom surface downward. However, the concave bottom surface of the CSP type LED element creates a space, which is suitable for the bottom surface to expand downward during the joining process due to high temperature. Due to this technical feature, it is possible to prevent the electrode of the CSP type LED element from being lifted to form a gap between the electrode of the LED semiconductor die and the connection electrode of the application substrate, resulting in poor connection due to soldering. Thus, a set of electrodes of a CSP type LED element having concave features according to some embodiments of the present disclosure can be reliably electrically applied to the application substrate by reflow soldering, eutectic bonding or other bonding methods. Connected, thereby avoiding poor or impaired electrical connection between the CSP type LED element and the substrate.

Further, since the bonding quality is good, the thermal resistance between the CSP type LED element and the application substrate can be reduced, whereby the joint temperature of the CSP type LED element during operation becomes lower. Therefore, the reliability of the CSP type LED element can be significantly improved. In addition, since the junction temperature is lower, the quantum efficiency of the LED semiconductor die during operation is higher. Further, if the bonding quality is good, the ohm contact between the CSP type LED element and the application substrate can be reduced, and the forward voltage becomes lower. As a result, the overall power loss is reduced and the luminous efficiency is higher.

Other aspects and embodiments of the present disclosure may also be considered. The above overview and the detailed description below do not limit this disclosure to any particular embodiment, but merely describe some embodiments of the present disclosure.

and and and It is the schematic which shows the cross section of the CSP type LED element by one Embodiment of this disclosure. It is the schematic which shows the cross section of the thermal expansion of the CSP type LED element to compare. It is the schematic which shows the cross section of the thermal expansion of the CSP type LED element by one Embodiment of this disclosure. It is the schematic which shows the cross section of the CSP type LED element by another embodiment of this disclosure. It is the schematic which shows the cross section of the CSP type LED element by another embodiment of this disclosure. It is the schematic which shows the cross section of the CSP type LED element by another embodiment of this disclosure. It is the schematic which shows the cross section of the CSP type LED element by another embodiment of this disclosure. It is the schematic which shows the cross section of the CSP type LED element by another embodiment of this disclosure. and and and and It is the schematic of the manufacturing process for manufacturing the CSP type LED element by the embodiment of this disclosure. and and and and and It is the schematic of the manufacturing process which manufactures another CSP type LED element by another embodiment of this disclosure. and and and It is the schematic of the manufacturing process which manufactures another CSP type LED element by another embodiment of this disclosure.

Detailed explanation

Definitions The following definitions apply to some of the technical aspects described with respect to some embodiments of the present disclosure. These definitions may be extended in the same manner herein.

Singular terms as used herein, whether unspecified or specified, shall include multiple objects unless otherwise specified in the context. Therefore, for example, the description of one layer may include a plurality of layers unless otherwise specified.

As used herein, the term "set" means a collection of one or more components. Thus, for example, a set of layers may include a single layer or multiple layers. Further, a set of components may mean a plurality of members in the set. A plurality of components in a set may be the same or different. In some examples, a set of components may contain one or more common properties.

As used herein, the term "adjacent" means close or adjacent. Adjacent components may exist apart from each other or may actually be in direct contact with each other. In some examples, adjacent components may be connected to each other or integrally formed with each other. In some embodiments, a component provided "on" or "on" another component means that the former component is on top of the latter component (eg, directly). It may include cases where it is provided directly (in physical contact) and cases where one or more intervening elements are provided between the former component and the latter component. In some embodiments, a component provided "below" another component means that the former component is provided directly below the latter component (eg, by direct physical contact). It may include the case where one or more intervening elements are provided between the former component and the latter component.

As used herein, the terms "connect," "connected," and "connect" mean operational concatenation or association. The connected components may be directly connected to each other, or may be indirectly connected to each other by another set of components or the like.

As used herein, the terms "about," "substantially," and "substantially" mean the degree or degree to be considered. When used in connection with an event or situation, the term is typically used in the manufacturing operations described herein, eg, where the event or situation almost occurs, as well as when the event or situation definitely occurs. It may include the case of proximity that occupies a certain permissible level. For example, when used in connection with a number, the term may include a range of variation within ± 10% of that number, eg ± 5%, ± 4%, ± 3%, ± 2. Includes the range within%, within ± 1%, within ± 0.5%, within ± 0.1%, or within ± 0.05%.

As used herein with respect to photoluminescence, the term "efficiency" or "quantum efficiency" refers to the ratio of the number of output photons to the number of input photons.

As used herein, the term "size" means characteristic dimensions. When the object is spherical (for example, particles), the size of the object may mean the diameter of the object. When the object is non-spherical, the size of the object means the average value of the various orthogonal dimensions of the object. Therefore, for example, the size of an ellipsoidal object may indicate the average value of the major axis and the minor axis of the object. When referring to a set of objects having a particular size, the objects are considered to have several sizes distributed around the particular size. Therefore, as used herein, the size of a set of objects may mean the general size of a size distribution such as an average, median or peak value of size.

As shown in FIG. 1A, the first embodiment of the CSP type LED element 1A according to the present disclosure includes the LED semiconductor 10 and the package structure 20. The technical contents will be described below.

The LED semiconductor die 10 is a flip-chip LED semiconductor die having an upper surface 11, a lower surface 12, an edge surface 13, and a set of electrodes 14. The top surface 11 and the bottom surface 12 are formed substantially parallel and face each other. The edge surface 13 is formed between the upper surface 11 and the lower surface 12, and connects the outer edge of the upper surface 11 and the outer edge of the lower surface 12. A set of electrodes 14, that is, a plurality of electrodes, is arranged on the lower surface 12. Electroluminescence is generated by applying electrical energy to the LED semiconductor die 10 through a set of electrodes 14. For this particular structure, the active region that produces electroluminescence is typically located near the lower end of the flip-chip LED semiconductor die 10 (near the bottom surface 12). Therefore, the light generated by the active region is emitted outward through the upper surface 11 and the edge surface 13. Therefore, the flip-chip LED semiconductor die 10 emits light from the upper surface 11 and the edge surface 13 (four peripheral edge surfaces), that is, a five-sided light emitting LED semiconductor die is formed.

The package structure 20 provides two functions as a whole. That is, 1. 2. Protect the LED semiconductor die 10 from the outside ambient environment. Down-converts the wavelength of light emitted by the LED semiconductor die 10. In terms of shape, the package structure 20 has an upper surface 21, a lower surface 22, and an edge surface 23. The upper surface 21 and the lower surface 22 are arranged so as to face each other, and the edge surface 23 is formed between the upper surface 21 and the lower surface 22 to connect the outer edge of the upper surface 21 to the outer edge of the lower surface 22.

Further, the package structure 20 is arranged on the LED semiconductor die 10 to cover the upper surface 11 and the edge surface 13 of the LED semiconductor die 10 so that the package structure 20 does not directly expose the LED semiconductor die 10 to the surrounding environment. Protect to prevent contamination and damage. The upper surface 21 of the package structure 20 is arranged at a distance from the upper surface 11 of the LED semiconductor die 10, and the edge surface 23 of the package structure 20 is also arranged at a distance from the edge surface 13 of the LED semiconductor die 10. It is desirable to provide a photoluminescence material in the space between the top surface 11 of the LED semiconductor die 10 and the top surface 21 of the package structure 20, thereby emitting blue light from the LED semiconductor die 10 through the top surface 11. Can be partially converted with a photoluminescent material. Further, the photoluminescence material is preferably provided in the space between the edge surface 13 of the LED semiconductor die 10 and the edge surface 23 of the package structure 20, and emits blue light from the LED semiconductor die 10 through the upper surface 13. The wavelength of light may be partially converted with a photoluminescent material. It will be appreciated that the package structure 20 does not cover the bottom surface 12 of the LED semiconductor die 10 or exposes at least a portion of it, exposing a set of electrodes 14 and later joining to the application substrate.

Further, the package structure 20 includes an upper resin member 30 and a lower resin member 40. The upper resin member 30 is arranged so as to be superposed on the lower resin member 40. Since the lower resin member 40 covers the upper surface 11 and the edge surface 13 of the LED semiconductor die 10, the upper resin member 30 does not come into direct or physical contact with the LED semiconductor die 10. The upper surface of the upper resin member 30 is the upper surface 21 of the package structure 20, and the lower surface of the lower resin member 40 is the lower surface 22 of the package structure 20. The edge surface of the upper resin member 30 and the edge surface of the lower resin member 40 are combined to form the edge surface 23 of the package structure 20. The light emitted from the LED semiconductor die 10 passes through both the lower resin member 40 and the upper resin member 30. Resin members 30 and 40 each include at least one photoluminescent material and / or light scattering particles (eg, TiO ₂ ), if desired. For example, the lower resin member 40 can be configured to include a photoluminescent material, and the upper resin member 30 can be configured to include light scattering particles. The upper resin member 30 and the lower resin member 40 may contain the same resin material or may contain different resin materials.

As a result, when the blue light emitted from the LED semiconductor die 10 passes through the lower resin member 40, a part of the wavelength of the blue light emitted by the LED semiconductor die 10 can be converted by the photoluminescence material. In this way, the light of various wavelengths emitted by the photoluminescence material and the LED semiconductor die 10 is mixed in a predetermined ratio to produce light of a desired color, for example, white light of various color temperatures. However, the wavelength of light does not change when it passes through the upper resin member 30 containing the scattered particles.

Both the upper resin member 30 and the lower resin member 40 are formed by thermosetting the resin material. Generally, the volume shrinkage of the resin material in the thermosetting step is caused by two forces. That is, the first contraction force generated by a chemical reaction and the second contraction force generated by a physical contraction phenomenon that occurs when the temperature drops. Cross-linking of the resin material during thermosetting is a chemical reaction, and the volume of the resin material can be shrunk at once by this reaction. Thermal expansion and contraction of the resin material due to temperature changes are inherent material properties. As the temperature drops from a higher curing temperature, for example about 150 ° C., to room temperature, the thermal expansion and contraction of the material allows the resin material to shrink in volume.

It will be understood that the effective coefficient of thermal expansion (CTE) of the entire composite resin material changes when other inorganic materials are dispersed in the organic resin material. Therefore, the overall volume shrinkage can vary accordingly. For example, when an inorganic material having a low CTE (coefficient of thermal expansion) (for example, a photoluminescence material) is dispersed in a resin material, the effective CTE of the entire composite resin material is lowered. The upper resin member 30 or the lower resin member 40 according to the present embodiment may include a photoluminescence material or light scattering particles, if necessary, and the photoluminescence material or light scattering particles are generally an inorganic material. Therefore, the effective CTE of the upper resin member 30 or the lower resin member 40 containing the photoluminescent material or light scattering particles is usually low.

The concave space under the CSP type LED element 1A can be formed in the manufacturing process of the LED element 1A using the combination of the above two forces including the volumetric shrinkage and the physical heat shrinkage caused by the chemical reaction. The details will be described below.

The CSP type LED element 1A disclosed in the present embodiment is mainly manufactured in two steps. As shown in FIG. 1B, the lower resin member 40 is thermoset to form the LED semiconductor die 10 during the first manufacturing stage. In the second manufacturing stage, as shown in FIG. 1C, the upper resin member 30 is arranged on the lower resin member 40 and then thermosetting.

In the manufacturing process of the LED element 1A in the first stage, as shown in FIG. 1B, the lower resin member 40 is thermoset and formed on the LED semiconductor die 10. During that time, the chemical reaction that occurs in the lower resin member 40 causes one volume contraction. For example, silicone resin materials generally exhibit about 6% volume shrinkage (about 2% linear dimensional shrinkage) after the polymerization reaction. On the other hand, the LED semiconductor die 10 is an inorganic material having a CTE of about 6.5 ppm / ° C, and its CTE value is much smaller than the CTE of the silicone resin material used for forming the lower resin member 40 (about 200 ppm / ° C). ℃). Therefore, the volume shrinkage of the lower resin member 40 caused by the polymerization reaction of the resin material and the subsequent cooling from the curing temperature (about 150 ° C.) to room temperature (about 25 ° C.) is much larger than the volume shrinkage of the LED semiconductor die 10. Since there is a large difference between the volume shrinkage of the lower resin member 40 and the volume shrinkage of the resin member of the LED semiconductor die 10, the lower resin member 40 having a large volume shrinkage can be expanded or expanded by the LED semiconductor die 10 having a small volume shrinkage. It is compressed. The internal stress generated at the boundary surface distorts the shape of the lower resin member 40 itself and deforms the lower surface upward. As a result, a concave space is formed under the lower resin member 40. This is the first major distortion mechanism that forms the concave structure of the CSP type LED element 1A.

As shown in FIG. 1C, in the second stage of the manufacturing process of the CSP type LED element 1A according to the present embodiment, the upper resin member 30 is formed on the lower resin member 40 and then polymerized by heat. Similarly, the chemical reaction that occurs in the upper resin member 30 causes one volume shrinkage, but the already solidified lower resin member 40 does not exhibit further volume shrinkage in another chemical reaction. Therefore, the volume shrinkage of the upper resin member 30 is much larger than that of the lower resin member 40. That is, the upper resin member 30 generates compressive stress on the lower resin member 40 along the boundary surface between the upper resin member 30 and the lower resin member 40, and the lower resin member 40 is deformed upward. This effect is the so-called bimorph effect. As shown in FIG. 1D, this bimorph effect causes the lower surface of the lower resin member 40 to warp upward. The broken line represents the geometric shape before deformation, and the solid line represents the shape after deformation. That is, the lower surface 22 of the package structure 20 deforms upward from the lower surface 12 of the LED semiconductor die 10 (for example, the lower surface 22 gradually bends or displaces upward from the lower surface 12) to form a concave shape. .. This is the second major distortion mechanism that forms the concave bottom surface of the CSP type LED element 1A.

In addition, the lower resin member 40 according to some embodiments of the present disclosure further comprises an inorganic photoluminescent material. Therefore, the effective CTE of the entire lower resin member 40 is smaller because the CTE of the photoluminescence material is much smaller than the CTE of the resin material. It is desirable that the upper resin member 30 does not contain a photoluminescent material, so that its overall effective CTE is higher than that of the lower resin member 40. Therefore, during the manufacturing process of forming the LED element 1A according to some embodiments of the present disclosure, in the upper resin member 30 having a high CTE, when the temperature drops from the high curing temperature to room temperature, the volume shrinkage of the lower resin member 40 It becomes larger than the volume shrinkage. Correspondingly, an interfacial stress is induced between the lower resin member 40 and the upper resin member 30, another bimorph effect is generated, and a larger concave shape is generated. This is the third major distortion mechanism that forms a concave space under the LED element 1A.

It will be understood that the upper surface of the upper resin member 30 (upper surface 21 of the package structure 20) is also deformed into a concave shape as shown in FIG. 1D by the above-mentioned three distortion mechanisms. Further, the edge surface 23 of the package structure 20 is also deformed with respect to the lower surface 12 of the LED semiconductor die 10 or deviates from the vertical orientation, and at least a part of the edge surface 23 is less than 90 degrees with respect to the lower surface 12. Angles are, for example, 88 degrees or less, 87 degrees or less, 86 degrees or less, 85 degrees or less.

As a result, the lower surface 22 of the package structure 20 is deformed upward, whereby a concave space is formed under the lower surface 22. When the LED element 1A is attached to the application substrate by a reflow soldering method, a eutectic bonding method or a similar bonding method, the package structure 20 may thermally expand and the lower surface 22 may be deformed downward. However, the pre-concave space on the lower surface 22 can accommodate further thermal expansion of the package structure 20 under high temperature conditions. As described above, the technical feature of this concave structure is a problem often encountered in relation to the CSP type LED element to be compared, that is, a set of electrodes 14 of the LED semiconductor die 10 is lifted during the bonding process at high temperature. A gap is created between one set of electrodes 14 and the connecting electrodes of the application substrate (not shown in FIG. 1D), which can effectively solve the problem of poor soldering or failure of the joint between the two. it can.

Moreover, during heating processes such as reflow soldering or eutectic bonding, the concave LED element 1A maintains an accurate and consistent soldering gap between a pair of electrodes 14 on the LED semiconductor die 10 and the electrodes on the application board. Then, the soldering gap can be filled with solder (not shown in FIG. 1D) with an appropriate thickness and density. In other words, the solder in the soldering crevices is not extruded by external forces that result in poor quality welds, crevices that cause low thermal conductivity, discontinuous solder material or other defects. As a result, the welding quality between the CSP type LED element 1A and the application substrate is improved, and as a result, the thermal conductivity is increased (for example, the thermal resistance is decreased), and the heat generated by the LED semiconductor die 10 during operation is increased. Can be quickly transmitted to the application substrate. As described above, since the joint temperature of the CSP type LED element 1A is lowered during operation, the quantum efficiency is improved, the reliability is improved, and the operating life of the CSP type LED element 1A is extended.

Furthermore, due to the excellent soldering quality, ohmic contact between a set of electrodes 14 of the LED semiconductor 10 and the connection electrodes of the application substrate can be reduced, thereby driving the forward voltage of the CSP type LED element 1A. Can be reduced and power loss can be reduced. The luminous efficiency of the LED element 1A can be improved in the same manner.

In summary, the CSP type LED element 1A, which has a concave space underneath the bottom surface 22, can provide excellent welding quality between the LED element 1A and the substrate, thus making the LED element 1A more reliable. It exhibits high performance and higher luminous efficiency.

FIG. 1E shows a simulation result showing the effect of thermal expansion of a comparative CSP type LED element having no recessed structure in a high temperature environment (about 250 ° C.) generally seen in a eutectic bonding process. In the situation of this simulation, the package structure 20 has a length of 1500 μm and a thickness of 600 μm, and the lower resin member 40 has a thickness of 80 μm. The LED semiconductor die 10 arranged in the package structure 20 has a length of 850 μm and a thickness of 150 μm. When the CSP type LED element becomes a high temperature environment, for example, during the eutectic bonding process, each component of the CSP type LED element is deformed by thermal expansion caused by a temperature rise. The amount of deformation of the package structure 20 is much larger than the amount of deformation of the LED semiconductor die 10. In the simulation example shown in FIG. 1E, the broken line represents the outer shell of the CSP type LED element at room temperature of 25 ° C., and the solid line represents the outer shell of the CSP type LED element at a temperature higher than 250 ° C. It has been clearly observed that each resin element of the CSP type LED element changes its shape considerably due to thermal expansion under the constraint of the boundary condition between the elements. As a result, the lower surface 22 of the package structure 20 is initially deformed 20.2 μm downward from the horizontal position aligned with the lower surface 12 of the LED semiconductor die 10 before thermal expansion. Due to this amount of deformation, a set of electrodes 14 of the LED element 10 is lifted vertically by 20.2 μm, and a gap that is too large to fill the space between the set of electrodes 14 and the electrodes of the substrate is created. As described above, when a comparative CSP type LED element having no concave structure is used, excellent welding quality cannot be guaranteed.

FIG. 1F shows another numerical simulation result showing the thermal expansion effect of the concave LED element 1A according to some embodiments of the present disclosure in a joining process environment at a high temperature of, for example, 250 ° C., and shows the geometric of the CSP element 1A. The dimensions are the same as the geometric dimensions of the elements for comparison, as shown in FIG. 1E. Similarly, the dashed line represents the original outline of the LED element 1A at room temperature 250 ° C., and the solid line represents the outline of the CSP type LED element 1A at a temperature higher than 250 ° C. At room temperature of 25 ° C., the amount of upward deformation (concave space) of the lower surface 22 of the package structure 20 of the LED element 1A is 20.9 μm, and the maximum concave gap is formed on the outer edge of the package structure 20. During the joining process at high temperature (250 ° C), the LED element 1A undergoes thermal expansion and deforms from the outer shell specified by the broken line (25 ° C) to the outer shell shown by the solid line (250 ° C). At the highest point of the lower surface 22 that occurs on the outer edge of the package structure 20, a deformation of 19.5 μm occurs downward. Since the amount of downward deformation (19.5 μm) of the package structure 20 is smaller than the concave space (20.9 μm) provided under the LED element 1A, the lower surface 22 does not lift a set of electrodes 14 and 1 There is no extremely large gap between the pair of electrodes 14 and the connecting electrodes of the application substrate. Therefore, excellent weld connection quality using LED element 1A can be achieved accordingly.

Further, the wet region (solder joint region) of the solder material arranged between the set of electrodes 14 of the LED semiconductor 10 and the electrodes of the substrate will reflect the welding quality. In general, the larger the wet area of the solder material, the better the weld quality. This is because the larger soldering area reduces the thermal resistance between the electrode 14 of the CSP type LED element 1A and the connection electrode of the application board, which causes heat to be transferred to the application board due to conductivity. It is effectively transmitted and can prevent heat from accumulating inside the CSP type LED element 1A. As an example of explaining the effect of the wet region of the solder material on the CSP element temperature, the wet region is measured by X-ray inspection as shown in Table 1. When the wet region of the solder material is less than about 70% of the electrode region (test condition 1), it represents a model with inadequate solder joint quality, and the temperature measured on the top surface of the LED element is above 110 ° C. When the wet area of the solder material exceeds about 95% of the electrode area (test condition 3), it represents a model with better heat dissipation of the CSP type LED element, and the temperature measured on the upper surface of the LED element is 105 ° C. Below. Under the same test conditions, the measured temperature on the upper surface 21 of the LED element 1A having the concave structure is 103 ° C., which is lower than the measured temperature of the test condition 3 (wet region is more than about 95%). These test results show that the recessed configurations of some embodiments of the present disclosure can significantly improve weld quality, thereby reducing thermal resistance and operating temperature.

In order to achieve improved welding quality, the lower surface 22 of the LED element 1A is configured to retain a predetermined amount of upward deformation (lower concave space). With reference to FIG. 1A, the desired concave space provided below the lower surface 22 is defined as follows. That is, the concave lower surface 22 of the LED element 1A includes an edge 221. The edge edge 221 is provided at a horizontal distance X from the edge surface 13 of the semiconductor die 10 and at a vertical distance Y from the edge surface 13 (or the lowest point of the lower surface 22) of the semiconductor die 10. The ratio (Y / X) of the vertical distance Y divided by the horizontal distance X is about 0.022 or more for the CSP type LED element 1A according to some embodiments of the present disclosure, for example, about 0.025 or more, about 0.03 or more, or about. It is desirable that it is 0.035 or more.

Further, the geometrical dimensions of the package structure 20 may affect the amount of dent on the lower surface 22 during the manufacturing process of the CSP type LED element 1A. As the horizontal dimension (width or length) of the package structure 20 increases, the amount of depression (eg, vertical distance Y) of the bottom surface 22 increases as the package structure 20 is thermoset. As the vertical dimension (thickness) of the package structure 20 increases, the amount of depression (for example, vertical distance Y) of the lower surface 22 also increases as the package structure 20 is thermoset.

However, when the thickness of the package structure 20 increases to a certain degree, the gradually increasing amount of dents on the lower surface 22 gradually saturates. This is because the upper surface 21 of the package structure 20 is further separated from the lower surface 22 by increasing the thickness of the package structure 20, so that the influence of the contraction of the upper part of the package structure 20 on the deformation of the lower surface 22 is exerted. Less. It is desirable to achieve better overall advantages by separating the top surface 21 of the package structure 20 from the top surface 11 of the LED semiconductor die 10 by about 50 μm to about 1000 μm.

Moreover, in this embodiment of the CSP type LED element 1A, both the upper resin member 30 and the lower resin member 40 can transmit light, each of which is at least a photoluminescent material and / or a light scattering particle as required. It may contain (such as TiO ₂ ). For example, the lower resin member 40 is configured to include a photoluminescent material, while the upper resin member 30 is configured to contain neither a photoluminescent material nor light scattering particles. Therefore, when the light emitted from the LED semiconductor die 10 passes through the lower resin member 40, the wavelength of the light can be converted by the photoluminescence material. However, the upper resin member 30 does not convert the wavelength of light. Further, the upper resin member 30 or the lower resin member 40 has a single-layer structure (formed by solidifying the composite material in a single curing step as shown in FIG. 1A) or a multi-layer structure (in FIG. 1A). Although not shown, it may be formed as (formed by solidifying the composite member in a plurality of curing steps).

The shape of the example of the lower resin member 40 will be described below. The lower resin member 40 includes an upper 41, an end 42 and an extension 43. All three parts can be formed simultaneously in a single manufacturing process. Specifically, the upper portion 41 is provided on the upper surface 11 of the LED semiconductor die 10, the end portion 42 covers the edge surface 13 of the LED semiconductor die 10, and the expansion portion 43 extends outward from the end portion 42. (For example, it extends away from the edge surface 13). Both the end 42 and the extension 43 have a rectangular shape surrounding the LED semiconductor die 10.

Each of the above paragraphs is a detailed description of an embodiment relating to the LED element 1A. Details regarding other embodiments of the LED device according to the present disclosure will be described below. Since the detailed description of the features and advantages found in the following embodiments of the LED element is the same as the description regarding the LED element 1A, the description thereof will be simplified.

FIG. 2 shows a schematic view showing a cross section of the CSP type LED element 1B according to another embodiment of the present disclosure. The difference between the LED element 1B and the LED element 1A is that at least the lower resin member 40 of the LED element 1B includes the light transmitting resin member 44 and the reflective resin member 45. The light transmitting resin member 44 may optionally be a photoluminescent material or a transparent resin member containing light scattering particles. The reflective resin member 45 covers the edge surface 13 of the LED semiconductor die 10, but does not cover the upper surface 11. The light transmitting resin member 44 covers both the upper surface 11 of the LED semiconductor die 10 and the upper surface 451 of the reflective resin member 45. In the present specification, the lower surface 22 of the reflective resin member 45 of the CSP type LED element 1B is deformed upward with respect to the lower surface 12 of the LED semiconductor die 10 like the lower surface 22 of the package structure 20 of the CSP type LED element 1A. To do.

Since the reflective resin member 45 covers the edge surface 13, the light emitted toward the edge surface 13 of the semiconductor die 10 is reflected and returned, and finally is emitted mainly from the upper surface 11 or only from the upper surface 11. Therefore, the spatial light emission of the LED element 1B is limited to a relatively small viewing angle. Therefore, the CSP type LED element 1B is suitable for a specific projection light source application.

FIG. 3 shows a schematic view showing a cross section of the CSP type LED element 1C according to another embodiment of the present disclosure. The difference between the LED element 1C and the LED element 1B is that the light transmitting resin member 44 is arranged on the upper surface 11, and the reflective resin member 45 is both the edge surface 13 of the LED semiconductor die 10 and the edge surface 441 of the light transmitting resin member 44. Is to cover. Thereby, the reflective resin member 45 can further prevent light from leaking through the edge surface 441 of the light transmitting resin member 44. Therefore, the viewing angle of the spatial light emission of the CSP type LED element 1C can be limited to a narrower angle. The color uniformity over various viewing angles is more improved in the embodiment of the CSP LED element 1C than in the embodiment of the CSP LED element 1B.

FIG. 4 shows a schematic view showing a cross section of the CSP type LED element 1D according to another embodiment of the present disclosure. The light emitting element 1D includes the LED semiconductor die 10 and the single-layer resin member 50, and the single-layer resin member 50 has the same function as the package structure 20 of the LED element 1A described above. However, while the single layer resin member 50 of the CSP type LED element 1D has a single layer resin material, the package structure 20 of the CSP type LED element 1A has at least two layers of resin material, that is, the upper resin member 30 and the lower part. It has a resin member 40.

The single-layer resin member 50 includes an upper surface 51, a lower surface 52, and an edge surface 53. The top surface 51 and the bottom surface 52 are formed substantially parallel and face each other. The edge surface 53 is formed and stretched between the upper surface 51 and the lower surface 52, and connects the outer edge of the upper surface 51 to the outer edge of the lower surface 52.

The single-layer resin member 50 is arranged on the LED semiconductor die 10 and covers the upper surface 11 and the edge surface 13 of the LED semiconductor die 10. As described above, another function of the single-layer resin member 50 is to protect the LED semiconductor die 10 from being directly exposed to the surrounding environment to prevent contamination or damage. The upper surface 51 of the single-layer resin member 50 is provided at a distance from the upper surface 11 of the LED semiconductor die 10. Similarly, the edge surface 53 of the single-layer resin member 50 is provided at a distance from the edge surface 13 of the LED semiconductor die 10.

Desirably, the photoluminescence material can be incorporated into the single-layer resin member 50 so that a part of the wavelength of blue light emitted from the upper surface 11 and the edge surface 13 of the LED semiconductor die 10 can be converted by the photoluminescence material. In this way, light of various wavelengths down-converted by the photoluminescence material and generated by the LED semiconductor die 10 is mixed at a predetermined ratio to produce light of a desired color, for example, white light of various color temperatures. Generate. It is understood that the single-layer resin member 50 does not cover the lower surface 12 of the LED semiconductor die 10 or exposes a set of electrodes 14 by exposing at least a portion of the lower surface and later joins to the application substrate. Yeah.

In the LED element 1D according to the present embodiment, the single-layer resin member 50 is mostly composed of an organic resin material. During the curing step at a high temperature, the single-layer resin member 50 undergoes a single volume shrinkage due to a chemical polymerization reaction. Again, the LED semiconductor die 10 is made of an inorganic material having a CTE significantly smaller than the organic CTE forming the single layer resin member 50. Therefore, the volume shrinkage of the single-layer resin member 50 generated by the physical phenomenon of heat shrinkage during the cooling step after the thermosetting is significantly larger than the volume shrinkage of the LED semiconductor die 10.

Therefore, the volume shrinkage of the single-layer resin member 50 is much larger than the volume shrinkage of the LED semiconductor die 10, and 1) the physical phenomenon of material shrinkage due to a decrease in temperature and 2) the chemical phenomenon of material shrinkage due to the polymerization reaction. It has each power caused by. As a result, the lower surface 52 is deformed upward to form a concave space, similar to the first main distortion mechanism for forming a concave space under the CSP type LED element 1A described above. In other words, the bottom surface 52 deforms upward from the bottom surface 12 of the LED semiconductor die 10 (or from the lowest point of the bottom surface 52). At the same time, the shrinkage of the resin member forms a recess on the upper surface 51 of the single-layer resin member 50, as shown in FIG.

Quantitatively, the concave shape of the lower surface 52 is defined as follows. That is, the concave lower surface 52 has an outer edge end 521. The edge 521 is arranged with a horizontal distance X from the edge surface 13 of the semiconductor die 10 and a vertical distance Y from the lower surface 12 (or the lowest point of the lower surface 52) of the semiconductor die 10. Is arranged. The ratio of the vertical distance Y to the horizontal distance X (ie, Y / X) is about 0.022 or more, preferably about 0.025 or more, about 0.03 or more, or about 0.035 or more.

Using the results of another simulation, the thermal expansion of the CSP LED element 1D with the same device parameters (geometric dimensions, CTE, etc.) as the CSP LED element 1A according to the first embodiment under similar resin curing temperature conditions. The reaction will be described. The simulation results show that after manufacturing the CSP type LED element 1D, the lower surface 52 of the single-layer resin member 50 has a recess depth of 17.8 μm at room temperature of 25 ° C. When the CSP type LED element 1D undergoes a higher bonding / soldering temperature of 250 ° C., the lower surface 52 of the single-layer resin member 50 thermally expands and deforms downward by 17.0 μm. Since the amount of downward expansion is less than the depth of the recess, the set of electrodes 14 will not be lifted from the connecting electrodes of the substrate due to the thermal expansion of the lower surface 52. In this way, the bonding quality between the LED element 1D and the substrate can be reliably improved.

Similar to the CSP type LED element 1A of the first embodiment, as the thickness of the single-layer resin member 50 increases, the gradually increasing amount of dent on the lower surface 52 becomes saturated. Therefore, in order to achieve an effective overall benefit, the desired distance from the top surface 51 of the single layer resin member 50 to the top surface 11 of the LED semiconductor die 10 is about 50 μm to about 1000 μm.

FIG. 5 shows a schematic view showing a cross section of the CSP type LED element 1E according to another embodiment of the present disclosure. The difference between the LED element 1E and the CSP type LED element 1D is that the resin member 50 of the package structure of the CSP type LED element 1E includes not only the light transmitting resin member 60 but also the reflective resin member 70. The light transmitting resin member 60 selectively covers the upper surface 11 of the LED semiconductor die 10, and the reflective resin member 70 covers both the edge surface 13 of the LED semiconductor die 10 and the edge surface 61 of the light transmitting resin member 60 so as to be adjacent to each other. To do.

The reflective resin member 70 covers both the edge surface 13 of the LED semiconductor die 10 and the edge surface 61 of the light transmitting resin member 60, and the light traveling toward the edge surface 13 and the edge surface 61 is reflected and returned, and finally. Emits mainly from the top surface 22 or only from the top surface 22. In this way, the viewing angle can be made smaller by limiting the light emission of the LED element 1E to a narrower spatial range.

FIG. 6 is a schematic view showing a cross section of the CSP type LED element 1F according to another embodiment of the present disclosure. The difference between the CSP type LED element 1F and the CSP type LED element 1E is that the reflective resin member 70 of the CSP type LED element 1F selectively covers the edge surface 13 of the LED semiconductor die 10, whereas the CSP type LED element 1F The light transmitting resin member 60 is a point that covers both the upper surface 11 of the LED semiconductor die 10 and the upper surface 71 of the reflective resin member 70.

In summary, the CSP type LED elements 1A-1F of some embodiments according to the present disclosure embody the common technical feature that the lower surface 22 or 52 is bent upward to form a concave space on the lower side. Therefore, various desired optical characteristics can be realized. The structural features of the concave lower surface of the CSP type LED elements 1A to 1F can effectively improve the disadvantages such as deterioration of the bonding quality between the CSP type LED element and the related application board and poor electrical connection. .. Thereby, higher reliability and higher luminous efficiency are appropriately achieved.

A manufacturing method for manufacturing some embodiments of the CSP type LED device according to the present disclosure will be described in the following paragraphs. As shown in FIGS. 1 to 6, the manufacturing method for manufacturing the CSP type LED elements 1A to 1F may be basically the same. Therefore, it should be understood that the description will be simplified by omitting some detailed explanations regarding the modified examples of the manufacturing method.

The method for manufacturing a CSP type LED element includes two main steps. First, the upper surface and the edge surface of the LED semiconductor die are covered with one or more thermosetting resin materials, and secondly, the resin material is cured by a specific heating step, and the package structure has an upwardly curved lower surface. To form. The technical content is further described below.

7A-7E show a first embodiment of the manufacturing method according to the present disclosure. As shown in FIG. 7A, a release layer 80 such as a release film may be prepared and further arranged on a carrier substrate (not shown) such as a silicon substrate or a glass substrate. Next, an array of LED semiconductor dies 10 is arranged on the release layer 80. It is desirable to embed a set of electrodes 14 of each LED semiconductor die 10 inside the release layer 80 and bond the lower surface 12 of the LED semiconductor die 10 to the release layer 80 to cover the release layer. In this way, a set of electrodes 14 is prevented from being contaminated during the subsequent manufacturing process.

As shown in FIG. 7B, the lower resin member 40'corresponds to the manufacturing material of the lower resin member 40 of the LED element 1A shown in FIG. 1A, and further, for example, spray coating using a thermosetting resin material. Alternatively, it is formed by spin coating to cover the top surface 11 and the edge surface 13 of each LED semiconductor die 10. At the manufacturing stage, the layer 40'of the lower resin member has not yet been cured (solidified).

The layer 40'of the lower resin member is then heated to, for example, a curing temperature of about 150 ° C. and maintained at this temperature for a certain period of time so that the layer 40' of the lower resin member solidifies and shrinks in volume. start. When the curing step is completed and the temperature drops to room temperature, the cured lower resin member layer 40'corresponding to the lower resin member 40 of the LED element 1A shown in FIG. 1A is formed. An internal interfacial stress is generated between the lower resin member 40'and the LED semiconductor die 10, so that when the release layer 80 is removed, a concave space is formed by the first major distortion mechanism described above. The lower resin member layer 40'is preferably made of a photoluminescent material, and the method for forming the phosphor layer disclosed in US Patent Application Publication No. US2010 / 0119839 is the treatment step of forming the lower resin member layer 40'. Suitable for. The entire technical content is incorporated herein by reference.

As shown in FIG. 7C, the layer 30'of the upper resin member corresponds to the upper resin member 30 of the LED element 1A shown in FIG. 1A, but the lower resin member layer obtained by curing the upper resin member 30 using a thermosetting resin material. Place adjacent to 40'and stack. At this manufacturing stage, the upper resin member layer 30'has not been cured yet. This manufacturing step can be achieved using manufacturing methods such as spray painting, printing or preparation.

Next, when the upper resin member layer 30'is heated to a desired temperature, it is thermosetting and its volume shrinks accordingly. When the curing step is completed and the temperature drops to room temperature, the cured upper resin member layer 30'corresponding to the lower resin member 30 of the CSP type LED element 1A shown in FIG. 1A is formed. In this manufacturing stage, an internal interfacial stress is generated between the cured upper resin member layer 30'and the cured lower resin member layer 40' to form a recessed space, but the recessed space is removed by the release layer 80. Then, the lower surface 22 of the CSP type LED element 1A is further deformed upward by the above-mentioned second and third main distortion mechanisms.

The cured lower resin member layer 40'and upper resin member layer 30' constitute an array of connected package structures 20' having an upwardly curved lower surface 22, which array is the package of the LED element 1A shown in FIG. 1A. It may correspond to the structure 20.

As shown in FIG. 7D, the release layer 80 is removed after the upper resin member layer 30'and the lower resin member layer 40' are sequentially cured. When the stress between the lower resin member layer 40'and the release layer 80 is removed, the array of connected package structures 20'shows a concave shape as a whole. Finally, as shown in FIG. 7E, the array of the connected package structures 20'is separated by an individual separation step, and a plurality of CSP type LED elements 1A' corresponding to the CSP type LED element 1A shown in FIG. 1A are separated. obtain.

In summary, to manufacture LED element 1A', a package structure 20' has two consecutive curing steps to solidify layers of at least two thermosetting resin members and has an upwardly curved bottom surface 22. Form an array of.

8A-8F show a manufacturing method for manufacturing another embodiment of the CSP type LED element 1C according to the present disclosure.

As shown in FIG. 8A, an array of LED semiconductor dies 10 is arranged on the release layer 80. Next, as shown in FIG. 8B, a plurality of cured optical transmission resin member bodies 44'are arranged adjacent to the upper surface 11 of the array of the LED semiconductor die 10. At this manufacturing stage, the light transmitting resin member body 44'can be adhered to the upper surface 11 of each LED semiconductor die 10 with a thermosetting paste (not shown, for example, silicone resin), whereby the light transmitting resin member body is heat-treated. 44'can be reliably bonded by the LED semiconductor die 10.

Next, as shown in FIG. 8C, the liquid reflective resin member body 45'is arranged between the grooves of the array, and the edge surface 13 of the LED semiconductor die 10 and the edge surface 441'of the optical transmission resin member body 44'(FIG. 8C). It covers the edge surface 441 of the light transmitting resin member 44 of the LED element 1C shown in 3.). The liquid reflective resin member body 45'solidifies by thermosetting and causes volume shrinkage of the material. The lower surface 22 of the cured reflective resin member body 45'corresponds to the reflective resin member 45 of the CSP type LED element 1C shown in FIG. 3, and is deformed upward from the lower surface 12 of the LED semiconductor die 10.

Next, as shown in FIG. 8D, the upper resin member layer 30'is arranged as a supernatant liquid layer that covers both the cured light transmitting resin member layer 44'and the cured reflective resin member body 45'. Therefore, volume shrinkage is caused by solidifying by thermosetting. In this manufacturing stage, the lower surface 22 of the reflective resin member body 45'is further deformed upward by the above-mentioned second and third distortion mechanisms to form a concave space.

The cured upper resin member layer 30', the light transmitting resin member layer 44', and the reflective resin member body 45' can form an array of connected package structures 20'. Finally, after removal of the release layer 80, as shown in FIG. 8E, an array of connected package structures 20'with an upwardly curved bottom surface 22' is separated by an individual separation step and shown in FIG. 8F. As shown, a plurality of CSP type LED elements 1C'corresponding to the LED element 1C shown in FIG. 3 are obtained.

In the present embodiment of the manufacturing method according to the present disclosure illustrated in FIGS. 8A to 8F, if the manufacturing step shown in FIG. 8D is omitted (that is, if the upper supernatant resin member 30'is omitted), the CSP type LED element after manufacturing is It will be understood that it corresponds to the LED element shown in FIG.

Further, a process sequence for manufacturing the CSP type LED element corresponding to the CSP type LED element 1B shown in FIG. 2 will be described below. In this embodiment of the manufacturing method illustrated in FIGS. 8A-8F according to the present disclosure, when the manufacturing step shown in FIG. 8A is completed, the manufacturing step shown in FIG. 8B is omitted and the corresponding manufacturing step shown in FIG. 8C is used. Therefore, while the reflective resin member body 45'is formed to selectively cover the edge surface 13, the upper surface 11 of the LED semiconductor die 10 is not covered. After the reflective resin member 45'is thermoset, the light transmitting resin member layer 44'is arranged so as to be joined to both the upper surface 11 of the LED semiconductor die 10 and the upper surface of the reflective resin member 45'. Accordingly, subsequent manufacturing steps illustrated in FIGS. 8D-8F will continue to be performed. In this way, the CSP type LED element corresponding to the CSP type LED element 1B shown in FIG. 2 can be obtained. It will be appreciated that if the corresponding manufacturing step shown in FIG. 8D is omitted (ie, without the use of the upper supernatant resin member 30'), the manufactured CSP type LED element corresponds to the CSP type LED element shown in FIG. ..

9A-9D show different manufacturing sequences as another embodiment of the manufacturing method according to the present disclosure.

As shown in FIG. 9A, an array of LED semiconductor dies 10 is arranged on the release layer 80. Next, as shown in FIG. 9B, the thermosetting resin layer 50'is arranged so as to cover the upper surface 11 and the edge surface 13 of each LED semiconductor die 10. Then, the resin layer 50'is thermoset to cause volume shrinkage. The cured resin layer 50'corresponds to the single-layer resin member 50 of the LED element 1D shown in FIG. At the manufacturing stage, the lower surface 52 of the resin layer 50'is further deformed upward from the lower surface 12 of the semiconductor die 10 by the above-mentioned first main distortion mechanism to form a concave space.

As shown in FIG. 9C, the release layer 80 is removed after the resin layer 50'is cured. Next, as shown in FIG. 9D, the resin layer 50'is separated by an individual separation step to obtain a plurality of CSP type LED elements 1D' corresponding to the CSP type LED element 1D shown in FIG.

In view of the above, some embodiments of a manufacturing method for manufacturing various CSP type LED elements having an upwardly curved lower surface and forming a concave space downward are disclosed. The disclosed method is well suited for batch type mass production processes.

Although the present disclosure has described specific embodiments, various changes can be made without departing from the true meaning and scope of the present disclosure as defined in the appended claims and are equal. Being replaceable will be understood by those skilled in the art. In addition, various changes may be made to apply specific circumstances, materials, composition, methods or processes to the purposes, intent and scope of this disclosure. All such changes are intended to be within the scope of the appended claims. In particular, the methods disclosed herein have been described with respect to specific actions performed in a particular order, but these actions may be combined, subdivided, or rearranged in the present disclosure. It will be understood that an equal method can be constructed without departing from the teachings. Therefore, unless otherwise specified herein, the order and grouping of each operation does not limit this disclosure.

Claims (10)

A flip chip that includes an upper surface, a lower surface facing the upper surface, an edge surface, and a set of electrodes, the edge surface extending between the upper surface and the lower surface, and the set of electrodes arranged on the lower surface. Light emitting diode (LED) semiconductor die and
The package structure includes the upper surface of the LED semiconductor die and the package structure covering the edge surface of the LED semiconductor die, and the package structure is concavely deformed provided at a distance from the upper surface of the LED semiconductor die. A light emitting element including an upper surface, a lower surface facing the upper surface and warping upward from the lower surface of the LED semiconductor die, and an edge surface extending between the upper surface of the package structure and the lower surface of the package structure. In
The package structure includes a lower resin member that covers the upper surface of the LED semiconductor die and the edge surface of the LED semiconductor die, and an upper resin member disposed on the lower resin member.
The edge surface of the package structure deviates from the vertical orientation with respect to the lower surface of the LED semiconductor die and is inclined .
The outer edge of the lower surface of the package structure is horizontally distanced from the edge surface of the LED semiconductor die, and is displaced upward from the lower surface of the LED semiconductor die to be vertically distanced. A light emitting element such that the ratio of the vertical distance divided by the horizontal distance does not fall below 0.022 . The light emitting element according to claim 1, wherein the distance between the upper surface of the package structure and the upper surface of the LED semiconductor die is in the range of 50 μm to 1000 μm. The lower resin member according to claim 1, wherein the lower resin member includes an upper portion that covers the upper surface of the LED semiconductor die, an end portion that covers the edge surface of the LED semiconductor die, and an extension portion that extends horizontally from the end portion. Light emitting element. The light emitting device according to claim 1, wherein the lower resin member has either a single-layer structure or a multi-layer structure, and the upper resin member has either a single-layer structure or a multi-layer structure. The light emitting device according to claim 1, wherein the package structure further includes a photoluminescent material, light scattering particles, or both. The lower resin member includes a reflective resin member that covers the edge surface of the LED semiconductor die, and a light transmitting resin member that is disposed on both the upper surface of the LED semiconductor die and the upper surface of the reflective resin member and covers them. The light emitting element according to claim 1. The lower resin member includes a light transmitting resin member that covers the upper surface of the LED semiconductor die, and a reflective resin member that covers both the edge surface of the LED semiconductor die and the edge surface of the light transmitting resin member. The light emitting element according to 1. The process of arranging an array of LED semiconductor dies on a release layer,
A step of spraying, painting, printing, or preparing a thermosetting resin material to form a lower resin member covering the upper surface and the edge surface of the LED semiconductor die, and solidifying the thermosetting resin material of the lower resin member by heating.
Subsequently, the thermosetting resin material was sprayed, painted, printed, or prepared to form the upper resin member on the lower resin member, and the thermosetting resin material of the upper resin member was solidified and connected by heating. In the step of forming an array of the package structure, an internal interfacial stress is generated between the upper resin member and the lower resin member due to volume shrinkage that occurs sequentially during the sequential solidification of the upper resin member and the lower resin member. Process,
A step of removing the release layer to remove the internal interfacial stress of the array of connected package structures to form a concave array of the connected package structures, and
A step of individually separating an array of connected package structures to form a plurality of package structures.
Each of the plurality of package structures includes an upper surface, a lower surface, and an edge surface, and the lower surface of the plurality of package structures is deformed upward from the lower surface of the LED semiconductor die. The upper surface of the package structure is concave, and the edge surface of the plurality of package structures is deviated from the vertical orientation with respect to the lower surface of the LED semiconductor die and is inclined .
The outer edge of the lower surface of the plurality of package structures is horizontally distanced from the edge surface of the LED semiconductor die, and is displaced upward from the lower surface of the LED semiconductor die to be vertically distanced. A method for manufacturing a light emitting element so that the ratio of the vertical distance divided by the horizontal distance does not fall below 0.022 . The lower resin member is a reflection that covers both the cured light transmitting resin material disposed on the upper surface of the LED semiconductor die, the edge surface of the LED semiconductor die, and the end portion of the cured light transmitting resin material. The upper resin member includes a resin member body, and the upper resin member is disposed on both the cured light transmitting resin material and the reflective resin member body, and the upper resin member is first described before being solidified. The method for manufacturing a light emitting element according to claim 8 , wherein the reflective resin member is solidified. The lower resin member further includes a reflective resin material that covers the edge surface of the LED semiconductor die, and a light transmitting resin material that covers both the upper surface of the LED semiconductor die and the upper surface of the reflective resin material. The method for manufacturing a light emitting element according to claim 8 , wherein the reflective tree material is first solidified before the light transmitting resin material is solidified.