TW201725758A - Recessed chip scale packaging light emitting device and manufacturing method of the same - Google Patents

Recessed chip scale packaging light emitting device and manufacturing method of the same Download PDF

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TW201725758A
TW201725758A TW105100783A TW105100783A TW201725758A TW 201725758 A TW201725758 A TW 201725758A TW 105100783 A TW105100783 A TW 105100783A TW 105100783 A TW105100783 A TW 105100783A TW 201725758 A TW201725758 A TW 201725758A
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light
resin member
emitting device
led
led chip
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TW105100783A
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TWI586000B (en
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傑 陳
王琮璽
鍾君煒
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行家光電股份有限公司
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Priority to US15/402,087 priority patent/US10615320B2/en
Priority to EP17150793.2A priority patent/EP3193379B1/en
Priority to JP2017003282A priority patent/JP6769881B2/en
Priority to KR1020170005046A priority patent/KR101933927B1/en
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Publication of TW201725758A publication Critical patent/TW201725758A/en
Priority to JP2018211686A priority patent/JP2019096871A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/568—Temporary substrate used as encapsulation process aid
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04105—Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L2224/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92244—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a build-up interconnect
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    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H—ELECTRICITY
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
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    • H01L2924/351—Thermal stress
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

A chip scale packaging (CSP) light emitting device (LED), comprising an LED chip and a packaging structure, is disclosed. The LED chip is encapsulated by the packaging structure, wherein the bottom of the packaging structure has a recess space. A manufacturing method of the aforementioned light emitting device is also disclosed. A recessed CSP LED disclosed according to the present invention can effectively resolve poor contact quality issue commonly found during welding process using conventional CSP LEDs. Poor welding quality for conventional CSP LEDs is typically caused by the enlarged contact gap between the electrode set of the LED chip and the pads of the substrate during the reflow soldering process or eutectic bonding process. The enlarged contact gap is found to be induced by the thermally expanding packaging structure during elevated-temperature welding process. Recess on the bottom surface of a CSP LED provides extra space to accommodate thermal expansion during the CSP LED welding phase. When the contact gap between the CSP electrode and the welding substrate is reduced during the welding phase, the CSP LED can therefore be solder-bonded to the substrate properly. Thus good welding contact is ensured. In addition to providing better electrical contact, good soldering contact will also improve thermal conductance between the CSP LED and the welding substrate, whereas lowering the junction temperature of the CSP LED during operation. CSP LED efficacy and reliability is greatly improved accordingly.

Description

具凹形設計的晶片級封裝發光裝置及其製造方法 Wafer-level package light-emitting device with concave design and manufacturing method thereof

本發明有關一種發光裝置(light emitting device，LED)及其製造方法，特別關於一種具有覆晶式LED晶片之晶片級封裝(chip scale packaging，CSP)發光裝置及其製造方法。 The present invention relates to a light emitting device (LED) and a method of fabricating the same, and more particularly to a chip scale packaging (CSP) light emitting device having a flip chip type LED chip and a method of fabricating the same.

LED(light emitting device)係普遍地被使用來提供照明光源或配置於電子產品中做為顯示光源或指示燈，而LED晶片通常會置於一支架型或陶瓷基板型封裝結構中，且被一螢光材料包覆或覆蓋，以成為一發光裝置(LED)。該發光裝置可透過回流銲接(reflow soldering)或共晶接合(eutectic bonding)等製程，將發光裝置固接至基板等其他結構上，藉此便可透過基板傳遞電能，以驅動發光裝置發光。 LED (light emitting device) is commonly used to provide an illumination source or is disposed in an electronic product as a display light source or indicator light, and the LED chip is usually placed in a bracket type or ceramic substrate type package structure, and is The fluorescent material is coated or covered to become a light emitting device (LED). The light-emitting device can be fixed to other structures such as a substrate by reflow soldering or eutectic bonding, thereby transferring electrical energy through the substrate to drive the light-emitting device to emit light.

隨著LED技術的演進，晶片級封裝(chip scale packaging，CSP)發光裝置(LED)以其明顯的優勢於近年開始受到廣大的重視。由於CSP LED僅由一LED晶片與一包覆LED晶片的封裝結構(通常包含一螢光材料)所組成，相較於傳統支架型LED與陶瓷基板型LED，CSP LED具有以下優點：(1)不需要金線及額外的支架或陶瓷基板，因此可明顯節省材料成本；(2)因省略了支架或陶瓷基板，可進一步降低LED晶片與散熱板之間的熱阻，因此在相同操作條件下將具有較低的操作溫度，或進而增加操作功率；(3)較低的操作溫度可使LED具有較高的晶片量子轉換效率；(4)大幅縮小的 封裝尺寸使得在設計模組或燈具時，具有更大的設計彈性；(5)具有小發光面積，因此可縮小光展量(Etendue)，使得二次光學更容易設計，亦或藉此獲得高發光強度(intensity)。 With the evolution of LED technology, chip scale packaging (CSP) light-emitting devices (LEDs) have received considerable attention in recent years due to their obvious advantages. Since the CSP LED consists of only one LED chip and a package structure (usually containing a fluorescent material) covering the LED chip, compared with the conventional bracket type LED and the ceramic substrate type LED, the CSP LED has the following advantages: (1) No need for gold wire and additional brackets or ceramic substrates, so material cost can be saved significantly; (2) the thermal resistance between the LED chip and the heat sink can be further reduced by omitting the bracket or ceramic substrate, so under the same operating conditions Will have lower operating temperature, or increase operating power; (3) lower operating temperature can make LEDs have higher wafer quantum conversion efficiency; (4) greatly reduced The package size allows for greater design flexibility when designing modules or luminaires; (5) has a small illuminating area, thus reducing the etendue, making secondary optics easier to design, or thereby achieving high Luminous intensity (intensity).

由於CSP LED不需要金線及額外的支架或陶瓷基板，因此在應用上需直接與基板接合。然而，現有的CSP LED在回流銲接或共晶接合等製程中，包覆LED晶片的封裝結構會因受熱而膨脹；膨脹的封裝結構將接觸並推擠位於其下方的基板，進而造成LED之電極與基板之銲墊產生較大的間隙。這種情況會導致LED無法被適當地銲接至基板上，因而造成電性連接失敗或銲接品質不良，而後者更會造成較高的電阻與熱阻，使LED耗能較高且散熱較差，導致整體效率下降，進而造成可靠度下降。 Since CSP LEDs do not require gold wires and additional brackets or ceramic substrates, they need to be bonded directly to the substrate for application. However, in the process of reflow soldering or eutectic bonding, the package structure of the LED chip is expanded by heat; the expanded package structure contacts and pushes the substrate underneath, thereby causing the electrode of the LED. A large gap is created with the pad of the substrate. This situation can cause the LED to be improperly soldered to the substrate, resulting in failure of electrical connection or poor soldering quality, while the latter will result in higher resistance and thermal resistance, resulting in higher LED energy consumption and poor heat dissipation. The overall efficiency is reduced, which in turn leads to a decrease in reliability.

為改善上述問題，一種可能的方式係在LED的電極之下方增設一較厚的金錫凸塊來墊高發光裝置，使受熱膨脹之包覆結構不會於銲接過程中碰觸基板，但增設該金錫凸塊將會明顯增加材料成本並因銲接對位而降低製造良率。 In order to improve the above problem, a possible way is to add a thick gold-tin bump under the electrode of the LED to raise the light-emitting device, so that the heat-expanded cladding structure does not touch the substrate during the soldering process, but is added. The gold tin bumps will significantly increase material costs and reduce manufacturing yield due to solder alignment.

有鑒於此，如何改善上述的缺失，乃業界成功建立符合市場需求的CSP LED之製造技術有待解決的問題。 In view of this, how to improve the above-mentioned shortcomings is a problem that the industry has successfully solved the manufacturing technology of CSP LEDs that meet the market demand.

本發明之一目的在於提供一種晶片級封裝(chip-scale packaging，CSP)發光裝置(light emitting device，LED)及其製造方法，其可使發光裝置與基板或其他結構之間的接合更為可靠。 An object of the present invention is to provide a chip-scale packaging (CSP) light emitting device (LED) and a manufacturing method thereof, which can make the bonding between the light-emitting device and the substrate or other structure more reliable. .

為達上述目的，本發明所揭露的一種發光裝置包含：一LED晶片及一包覆結構。該LED晶片為一覆晶式LED晶片，具有一上表面、一下 表面、一立面以及一電極組，電極組設置於LED晶片之下表面上；包覆結構覆蓋於LED晶片之上表面及立面；其中，包覆結構包含一上層樹脂部件及一下層樹脂部件，下層樹脂部件覆蓋於LED晶片之上表面及立面，而上層樹脂部件堆疊於下層樹脂部件上，且包覆結構之底面具有凹陷空間。 To achieve the above objective, a light emitting device according to the present invention comprises: an LED chip and a covering structure. The LED chip is a flip chip LED chip having an upper surface and a lower surface a surface, a façade and an electrode group, the electrode group is disposed on the lower surface of the LED wafer; the covering structure covers the upper surface and the façade of the LED chip; wherein the covering structure comprises an upper resin component and a lower resin component The lower resin member covers the upper surface and the elevation of the LED wafer, and the upper resin member is stacked on the lower resin member, and the bottom surface of the cladding structure has a recessed space.

為達上述目的，本發明所揭露的另一種發光裝置包含：一LED晶片及一單層樹脂部件。該LED晶片為一覆晶式LED晶片，具有一上表面、一下表面、一立面以及一電極組，電極組設置於LED晶片之下表面上，單層樹脂部件覆蓋於LED晶片之上表面及立面，其中，單層樹脂部件之底面具有凹陷空間。 In order to achieve the above object, another light-emitting device disclosed by the present invention comprises: an LED chip and a single-layer resin component. The LED chip is a flip-chip LED chip having an upper surface, a lower surface, a vertical surface and an electrode group. The electrode group is disposed on the lower surface of the LED wafer, and the single-layer resin component covers the upper surface of the LED wafer and The façade, wherein the bottom surface of the single-layer resin member has a recessed space.

為達上述目的，本發明所揭露的一種發光裝置的製造方法，包含：將一熱固化樹脂材料覆蓋一覆晶式LED晶片之上表面及立面；對熱固化材料加熱，使其固化並收縮，以形成具有一向上翹曲的底面之包覆結構。 In order to achieve the above object, a method for fabricating a light-emitting device according to the present invention includes: covering a surface and a surface of a flip-chip LED wafer with a thermosetting resin material; heating and shrinking the heat curing material to cure and shrink To form a cladding structure having an upwardly warped bottom surface.

藉此，本發明的發光裝置及其製造方法至少能提供以下的有益效果：發光裝置的包覆結構(樹脂部件)在熱固化後具有向上翹曲的凹陷底面，當發光裝置設置於基板(或其他結構)後進行回流銲接(reflow soldering)或共晶接合(eutectic bonding)等加熱製程時，包覆結構雖然會受熱膨脹而使其底面向下變形，但該底面的凹陷空間可容納包覆結構受熱後的向下膨脹量，故該底面不會造成LED晶片電極與基板銲墊之間隙過大而產生銲料接觸不良。因此，具凹形設計之發光裝置的電極組可確實地經由銲料與基板相連接，避免於回流銲接或共晶接合等製程中造成發光裝置與基板之間電性連接失敗，或銲接品質不良；相較於無凹形設計的發光裝 置，本發明所揭露之發光裝置仍可藉由凹形設計而明顯改善銲接失敗或銲接品質不良之缺點。 Thereby, the light-emitting device of the present invention and the method of manufacturing the same can at least provide the following advantageous effects: the covering structure (resin member) of the light-emitting device has a concave bottom surface that is warped upward after heat curing, and the light-emitting device is disposed on the substrate (or In other structures), when a heating process such as reflow soldering or eutectic bonding is performed, the covering structure is thermally expanded to deform the bottom surface downward, but the recessed space of the bottom surface can accommodate the covering structure. The amount of downward expansion after heating is such that the bottom surface does not cause excessive gap between the LED wafer electrode and the substrate pad to cause solder contact failure. Therefore, the electrode group of the concave-shaped light-emitting device can be surely connected to the substrate via the solder, thereby avoiding failure of electrical connection between the light-emitting device and the substrate in a process such as reflow soldering or eutectic bonding, or poor soldering quality; Compared to a non-concave design The illuminating device disclosed in the present invention can still significantly improve the defects of welding failure or poor welding quality by the concave design.

此外，良好的銲接品質可降低發光裝置與基板之間的熱阻，使發光裝置於操作時具有較低的接合點溫度(junction temperature)，藉此可改善發光裝置之可靠度性能，又，較低之接合點溫度可使LED晶片具有較高的量子轉換效率(quantum efficiency)；再者，良好的銲接品質亦可改善發光裝置與基板間之歐姆接觸(ohmic contact)，使發光裝置具有較低之正向電壓，可降低整體的功率損耗而獲得較高之發光效率(efficacy)。 In addition, good soldering quality can reduce the thermal resistance between the light-emitting device and the substrate, so that the light-emitting device has a lower junction temperature during operation, thereby improving the reliability performance of the light-emitting device, and The low junction temperature allows the LED wafer to have a high quantum efficiency; further, good solder quality can also improve the ohmic contact between the illuminating device and the substrate, making the illuminating device lower. The forward voltage reduces the overall power loss and achieves higher luminous efficiency.

為讓上述目的、技術特徵及優點能更明顯易懂，下文係以較佳之實施例配合所附圖式進行詳細說明。 The above objects, technical features and advantages will be more apparent from the following description.

1A、1A’、1B、1C、1C’、1D、1D’、1E、1F‧‧‧發光裝置 1A, 1A', 1B, 1C, 1C', 1D, 1D', 1E, 1F‧‧‧ illuminating devices

10‧‧‧LED晶片 10‧‧‧LED chip

11‧‧‧上表面 11‧‧‧ upper surface

12‧‧‧下表面 12‧‧‧ Lower surface

13‧‧‧立面 13‧‧‧Facade

14‧‧‧電極組 14‧‧‧Electrode group

20‧‧‧包覆結構 20‧‧‧Covered structure

20’‧‧‧包覆結構 20'‧‧‧Covered structure

21‧‧‧頂面 21‧‧‧ top surface

22‧‧‧底面 22‧‧‧ bottom

221‧‧‧邊緣 221‧‧‧ edge

23‧‧‧側面 23‧‧‧ side

30‧‧‧上層樹脂部件 30‧‧‧Upper resin parts

30’‧‧‧上層樹脂材料 30'‧‧‧Upper resin material

40‧‧‧下層樹脂部件 40‧‧‧Under resin parts

40’‧‧‧下層樹脂材料 40'‧‧‧Underline resin material

41‧‧‧頂部 41‧‧‧ top

42‧‧‧側部 42‧‧‧ side

43‧‧‧延伸部 43‧‧‧Extension

44‧‧‧透光樹脂部件 44‧‧‧Translucent resin parts

44’‧‧‧透光樹脂材料 44'‧‧‧Transparent resin material

441‧‧‧側面 441‧‧‧ side

441’‧‧‧側面 441’‧‧‧ side

442‧‧‧頂面 442‧‧‧ top surface

45‧‧‧反射樹脂部件 45‧‧‧Resist resin parts

45’‧‧‧反射樹脂材料 45'‧‧‧Resist resin material

451‧‧‧頂面 451‧‧‧ top surface

50‧‧‧單層樹脂部件 50‧‧‧Single layer resin parts

50’‧‧‧樹脂材料 50'‧‧‧Resin materials

51‧‧‧頂面 51‧‧‧ top surface

52‧‧‧底面 52‧‧‧ bottom

521‧‧‧邊緣 521‧‧‧ edge

53‧‧‧側面 53‧‧‧ side

60‧‧‧透光樹脂部件 60‧‧‧Translucent resin parts

61‧‧‧側面 61‧‧‧ side

62‧‧‧頂面 62‧‧‧ top surface

70‧‧‧反射樹脂部件 70‧‧‧Resist resin parts

71‧‧‧上表面 71‧‧‧Upper surface

80‧‧‧離型材料 80‧‧‧ release material

80’‧‧‧離型材料 80'‧‧‧ release material

X‧‧‧水平距離 X‧‧‧ horizontal distance

Y‧‧‧垂直距離 Y‧‧‧Vertical distance

第1A圖至第1D圖為依據本發明之第1較佳實施例之發光裝置的示意圖。 1A to 1D are schematic views of a light-emitting device according to a first preferred embodiment of the present invention.

第1E圖為現有發光裝置受熱膨脹之示意圖。 Fig. 1E is a schematic view showing the thermal expansion of the conventional light-emitting device.

第1F圖為依據本發明之第1較佳實施例之發光裝置受熱膨脹之示意圖。 Fig. 1F is a schematic view showing the thermal expansion of the light-emitting device according to the first preferred embodiment of the present invention.

第2圖為依據本發明之第2較佳實施例之發光裝置的示意圖。 Fig. 2 is a schematic view showing a light-emitting device according to a second preferred embodiment of the present invention.

第3圖為依據本發明之第3較佳實施例之發光裝置的示意圖。 Figure 3 is a schematic view of a light-emitting device according to a third preferred embodiment of the present invention.

第4圖為依據本發明之第4較佳實施例之發光裝置的示意圖。 Figure 4 is a schematic view of a light-emitting device according to a fourth preferred embodiment of the present invention.

第5圖為依據本發明之第5較佳實施例之發光裝置的示意圖。 Figure 5 is a schematic view of a light-emitting device according to a fifth preferred embodiment of the present invention.

第6圖為依據本發明之第6較佳實施例之發光裝置的示意圖。 Figure 6 is a schematic view of a light-emitting device according to a sixth preferred embodiment of the present invention.

第7A圖至第7E圖為依據本發明之發光裝置之製造方法之第1較佳實施 例的步驟示意圖。 7A to 7E are first preferred embodiments of a method of manufacturing a light-emitting device according to the present invention. A schematic diagram of the steps of the example.

第8A圖至第8F圖為依據本發明之發光裝置之製造方法之第2較佳實施例的步驟示意圖。 8A to 8F are schematic views showing the steps of a second preferred embodiment of the method of manufacturing a light-emitting device according to the present invention.

第9A圖至第9D圖為依據本發明之發光裝置之製造方法之第3較佳實施例的步驟示意圖。 9A to 9D are schematic views showing the steps of a third preferred embodiment of the method of manufacturing a light-emitting device according to the present invention.

請參閱第1A圖所示，其為依據本發明之第1較佳實施例之發光裝置(light emitting device，LED)的示意圖(剖視圖)。該發光裝置1A可包含一LED晶片10及一包覆結構20，而該些元件的技術內容將依序說明如下。 Please refer to FIG. 1A, which is a schematic view (cross-sectional view) of a light emitting device (LED) according to a first preferred embodiment of the present invention. The illuminating device 1A can include an LED chip 10 and a covering structure 20, and the technical contents of the components will be described as follows.

該LED晶片10為一覆晶式LED晶片，而外觀上可具有一上表面11、一下表面12、一立面13及一電極組14。該上表面11與下表面12為相對且相反地設置，而立面13形成於上表面11與下表面12之間，且連接上表面11與下表面12。電極組14設置於下表面12上，且可具有二個以上之電極。電能(圖未示)可透過電極組14供應至LED晶片10內，然後使LED晶片10發光。由於可產生光線之發光層通常位於覆晶式LED晶片10內部之下方，由發光層所產生之光線會穿透覆晶式LED晶片10之上表面11與立面13而向外傳遞，因此，覆晶式LED晶片10具有五面發光之特性，即LED晶片10具有五面發光之特性。 The LED chip 10 is a flip chip LED chip, and has an upper surface 11, a lower surface 12, a vertical surface 13 and an electrode group 14 in appearance. The upper surface 11 and the lower surface 12 are opposite and oppositely disposed, and the elevation 13 is formed between the upper surface 11 and the lower surface 12, and connects the upper surface 11 and the lower surface 12. The electrode group 14 is disposed on the lower surface 12 and may have more than two electrodes. Electrical energy (not shown) can be supplied into the LED wafer 10 through the electrode group 14, and then the LED wafer 10 is illuminated. Since the light-emitting layer that generates light is usually located below the inside of the flip-chip LED wafer 10, the light generated by the light-emitting layer passes through the upper surface 11 and the elevation 13 of the flip-chip LED wafer 10 and is transmitted outward. The flip chip type LED wafer 10 has the characteristics of five-sided light emission, that is, the LED wafer 10 has the characteristics of five-sided light emission.

包覆結構20可保護LED晶片10、且較佳地能改變LED晶片10所發射之光線之波長，而外觀上包覆結構20可具有一頂面21、一底面22及 一側面23；頂面21與底面22為相對且相反設置，而側面23形成於頂面21與底面22之間，且側面23還連接頂面21與底面22。換言之，該側面23是沿著頂面21與底面22之輪廓(邊緣)而形成，故該側面23相對於頂面21與底面22為環狀(例如矩型環)。 The cover structure 20 can protect the LED chip 10 and preferably change the wavelength of the light emitted by the LED chip 10. The outer cover structure 20 can have a top surface 21 and a bottom surface 22 and A side surface 23; the top surface 21 and the bottom surface 22 are opposite and oppositely disposed, and the side surface 23 is formed between the top surface 21 and the bottom surface 22, and the side surface 23 is also connected to the top surface 21 and the bottom surface 22. In other words, the side surface 23 is formed along the contour (edge) of the top surface 21 and the bottom surface 22, so that the side surface 23 is annular with respect to the top surface 21 and the bottom surface 22 (for example, a rectangular ring).

包覆結構20位置上係設置於LED晶片10上，且覆蓋LED晶片10之上表面11及立面13，使得包覆結構20可保護LED晶片10，使其上表面11及立面13較不會直接地接觸到環境物而遭受汙染或損壞。如此，包覆結構20的頂面21與LED晶片10的上表面11會相距，而包覆結構20的側面23亦會與LED晶片10的立面13相距。較佳地，於LED晶片10之上表面11與包覆結構20之頂面21之間包含一螢光材料，使LED晶片10經由上表面11所發出之藍光可經由螢光材料部份地轉換波長；較佳地，於LED晶片10之立面13與包覆結構20之側面23之間包含一螢光材料，使LED晶片10經由立面13所發出之藍光可經由螢光材料部份地轉換波長。較佳地，包覆結構20不會覆蓋LED晶片10的下表面12，以使得電極組14可更適當地暴露出。 The cover structure 20 is disposed on the LED chip 10 at a position and covers the upper surface 11 and the elevation 13 of the LED chip 10, so that the cover structure 20 can protect the LED wafer 10 such that the upper surface 11 and the elevation 13 are less Will be exposed to environmental substances directly and suffer from pollution or damage. As such, the top surface 21 of the cladding structure 20 is spaced from the upper surface 11 of the LED wafer 10, and the side surface 23 of the cladding structure 20 is also spaced from the elevation 13 of the LED wafer 10. Preferably, a phosphor material is included between the upper surface 11 of the LED chip 10 and the top surface 21 of the cladding structure 20, so that the blue light emitted by the LED wafer 10 via the upper surface 11 can be partially converted via the fluorescent material. Preferably, a phosphor material is included between the façade 13 of the LED chip 10 and the side surface 23 of the cladding structure 20, so that the blue light emitted by the LED chip 10 via the façade 13 can be partially via the phosphor material. Convert wavelength. Preferably, the cladding structure 20 does not cover the lower surface 12 of the LED wafer 10 such that the electrode assembly 14 can be more properly exposed.

包覆結構20結構上可包含一上層樹脂部件30及一下層樹脂部件40，而上層樹脂部件30形成於下層樹脂部件40之上，或可說，上層樹脂部件30堆疊於下層樹脂部件40之上。下層樹脂部件40覆蓋LED晶片10之上表面11及立面13，而上層樹脂部件30不會接觸到LED晶片10。上層樹脂部件30的頂面即為包覆結構20之頂面21，下層樹脂部件40之底面為包覆結構20之底面22，而上層樹脂部件30之側面及下層樹脂部件40之側面共同為包覆結構20之側面23。上層樹脂部件30與下層樹脂部件40都可讓光線通過，且兩者皆可選擇性地包含至少一螢光材料及/或光學散射性微粒(例如 二氧化鈦，TiO2)，例如上層樹脂部件30被選擇不包含螢光材料或光學散射性微粒，而下層樹脂部件40被選擇僅包含螢光材料。 The covering structure 20 may structurally include an upper resin member 30 and a lower resin member 40, and the upper resin member 30 is formed on the lower resin member 40, or it may be said that the upper resin member 30 is stacked on the lower resin member 40. . The lower resin member 40 covers the upper surface 11 and the façade 13 of the LED wafer 10, and the upper resin member 30 does not contact the LED wafer 10. The top surface of the upper resin member 30 is the top surface 21 of the covering structure 20, and the bottom surface of the lower resin member 40 is the bottom surface 22 of the covering structure 20, and the side surface of the upper resin member 30 and the side surface of the lower resin member 40 are collectively wrapped. The side 23 of the cover structure 20. Both the upper resin member 30 and the lower resin member 40 allow light to pass therethrough, and both selectively include at least one fluorescent material and/or optical scattering particles (for example, titanium oxide, TiO 2 ), for example, the upper resin member 30 is The selection does not include a fluorescent material or optically scattering particles, and the lower resin member 40 is selected to contain only the fluorescent material.

如此，LED晶片10所發出之光線通過下層樹脂部件40時，位於LED晶片10之上表面11與立面13之螢光材料可部份地轉換LED晶片10所產生之藍光的波長，藉此，上表面11與立面13處所產生的不同波長之光線可以適當比例混合而形成所需顏色之光線，例如不同色溫之白光；但通過上層樹脂部件30時，光線之波長無明顯的變化。 Thus, when the light emitted by the LED chip 10 passes through the lower resin component 40, the phosphor material located on the upper surface 11 and the elevation surface 13 of the LED chip 10 can partially convert the wavelength of the blue light generated by the LED chip 10, thereby Light of different wavelengths generated at the upper surface 11 and the façade 13 may be mixed in an appropriate ratio to form light of a desired color, such as white light of different color temperatures; however, when passing through the upper resin member 30, there is no significant change in the wavelength of the light.

上層樹脂部件30及下層樹脂部件40是藉由樹脂材料熱固化後所形成者。樹脂材料在熱固化的過程中會因為兩項機制造成其體積的收縮：一者為化學反應所造成之體積收縮，二者為溫度變化所造成冷縮熱脹之物理現象。樹脂材料固化過程中的分子交聯(cross-link)行為乃化學反應，其將導致樹脂材料產生體積上的收縮，而此化學反應所造成之體積收縮為一次性的收縮；而樹脂材料的冷縮熱脹乃物理特性，從熱固化溫度(例如150℃)下降至室溫的冷卻過程中，樹脂材料會因為溫度的下降而造成體積上的收縮。 The upper resin member 30 and the lower resin member 40 are formed by heat curing of a resin material. In the process of heat curing, the resin material will shrink its volume due to two mechanisms: one is the volume shrinkage caused by the chemical reaction, and the two are the physical phenomena of the shrinkage and thermal expansion caused by the temperature change. The cross-linking behavior of the resin material during the curing process is a chemical reaction, which will cause the resin material to undergo volumetric shrinkage, and the volume shrinkage caused by the chemical reaction is a one-time shrinkage; and the resin material is cold. The shrinkage is a physical property, and the resin material shrinks due to a decrease in temperature during cooling from a heat curing temperature (for example, 150 ° C) to room temperature.

其中，若樹脂材料中有摻雜其他材料時，將會改變樹脂材料整體的熱膨脹係數而造成體積收縮量的改變，若加入較低熱膨脹係數的無機材料(例如螢光材料)，會降低樹脂材料之整體熱膨脹係數，反之，則會增加其整體熱膨脹係數。本實施例之上層樹脂部件30與下層樹脂部件40之每一者可選擇性地包含一螢光材料或光學散射性微粒，而螢光材料或光學散射性微粒通常為無機材料，故，加入螢光材料或光學散射性微粒之上層樹脂部件30或下層樹脂部件40通常會較純樹脂部件具有較低之整體熱膨脹 係數。 Wherein, if the resin material is doped with other materials, the thermal expansion coefficient of the resin material as a whole is changed to cause a change in volume shrinkage, and if a lower thermal expansion coefficient of the inorganic material (for example, a fluorescent material) is added, the resin material is lowered. The overall coefficient of thermal expansion, and vice versa, increases its overall coefficient of thermal expansion. Each of the upper resin member 30 and the lower resin member 40 of the present embodiment may selectively include a fluorescent material or optical scattering fine particles, and the fluorescent material or the optical scattering fine particles are usually inorganic materials, so that the fluorescent material is added. The light material or the optically scattering fine particles upper layer resin member 30 or the lower resin member 40 generally have a lower overall thermal expansion than the pure resin member. coefficient.

發光裝置1A的凹形(recess)乃由在形成本發明所揭露之發光裝置1A之製造過程中，經由上述之材料化學反應所造成之體積收縮與溫度變化所造成材料冷縮熱脹之物理現象兩項主要機制所形成，依序說明如後。 The recess of the light-emitting device 1A is a physical phenomenon of shrinkage and thermal expansion of the material caused by volumetric shrinkage and temperature change caused by the chemical reaction of the material in the manufacturing process of the light-emitting device 1A disclosed in the present invention. The two main mechanisms are formed, as explained in the following order.

本發明所揭露之發光裝置1A有兩個主要製造步驟，如第1B圖所示，於第一步驟中，將下層樹脂部件40熱固化以形成於LED晶片10上，接著，如第1C圖所示，於第二步驟中，將上層樹脂部件30形成於下層樹脂部件40上，然後加熱固化。 The light-emitting device 1A disclosed in the present invention has two main manufacturing steps. As shown in FIG. 1B, in the first step, the lower resin member 40 is thermally cured to be formed on the LED wafer 10, and then, as shown in FIG. 1C. It is shown that in the second step, the upper resin member 30 is formed on the lower resin member 40, and then heat-cured.

在形成本發明所揭露之發光裝置1A之製造過程中，如第1B圖所示，於第一步驟中，下層樹脂部件40先被熱固化形成於LED晶片10上，此時下層樹脂部件40於固化過程中會產生化學反應所造成之一次性的體積收縮，以矽膠樹脂(silicone)為例，其常見之固化反應所造成的體積收縮率約為6%(其線收縮率約為2%)；又，LED晶片10屬無機材料，其熱膨脹係數約為6.5ppm/℃，遠小於形成下層樹脂部件40之材料熱膨脹係數，約為200ppm/℃。因此，發光裝置1A在下層樹脂部件40之熱固化反應以及其後從固化溫度(約150℃)至室溫(約25℃)的降溫過程中，其體積收縮量會遠大於LED晶片10的體積收縮量。由於LED晶片10與下層樹脂部件40明顯的收縮量的差異，會使向內收縮量較大的下層樹脂部件40拉扯向內收縮量較小的LED晶片10時，造成下層樹脂部件40形變而使底面向上翹曲，形成一凹形結構，此為使發光裝置1A底部形成凹形的第一主要機制。 In the manufacturing process of forming the light-emitting device 1A disclosed in the present invention, as shown in FIG. 1B, in the first step, the lower resin member 40 is first thermally formed on the LED wafer 10, and the lower resin member 40 is During the curing process, a one-time volume shrinkage caused by a chemical reaction occurs. Taking silicone as an example, the volume shrinkage caused by the usual curing reaction is about 6% (the linear shrinkage is about 2%). Further, the LED wafer 10 is an inorganic material having a thermal expansion coefficient of about 6.5 ppm/° C. which is much smaller than the thermal expansion coefficient of the material forming the underlying resin member 40, which is about 200 ppm/° C. Therefore, the volume shrinkage of the light-emitting device 1A in the thermal curing reaction of the lower resin member 40 and thereafter from the curing temperature (about 150 ° C) to room temperature (about 25 ° C) is much larger than the volume of the LED wafer 10 The amount of shrinkage. When the lower layer resin member 40 having a large amount of inward contraction pulls the LED wafer 10 having a small amount of inward contraction due to a significant difference in the amount of shrinkage between the LED wafer 10 and the lower resin member 40, the lower resin member 40 is deformed. The bottom surface is warped upward to form a concave structure, which is the first main mechanism for forming the bottom of the light-emitting device 1A into a concave shape.

再者，在形成本發明所揭露之發光裝置1A之製造過程中， 如第1C圖所示，於第二步驟中，將上層樹脂部件30形成於下層樹脂部件40上，然後加熱固化；上層樹脂部件30會產生化學反應所造成之一次性的體積收縮，但已固化之下層樹脂部件40此時不會產生化學反應所造成之一次性的體積收縮；在此作用之下，上層樹脂部件30將產生明顯大於下層樹脂部件40的體積收縮量，因而下層樹脂部件40與上層樹脂部件30之間將形成應力而造成下層樹脂部件40向上翹曲，即所謂之雙層板效應(bimorph effect)，如第1D圖所示，此雙層板效應造成下層樹脂部件40之底面向上翹曲(從虛線者變為實線者)，即，包覆結構20之底面22自LED晶片10之下表面12向上翹曲(即從下表面12開始，底面22會漸漸地往上彎曲)，而形成一凹形。此為使發光裝置1A底部形成凹形的第二主要機制。 Furthermore, in the process of forming the light-emitting device 1A disclosed in the present invention, As shown in Fig. 1C, in the second step, the upper resin member 30 is formed on the lower resin member 40 and then heat-cured; the upper resin member 30 generates a one-time volume shrinkage caused by a chemical reaction, but is cured. The underlying resin member 40 does not cause a one-time volume shrinkage caused by a chemical reaction at this time; under this action, the upper resin member 30 will produce a volume shrinkage amount significantly larger than that of the lower resin member 40, and thus the lower resin member 40 and Stress is formed between the upper resin members 30 to cause the lower resin member 40 to warp upward, that is, a so-called bimorph effect. As shown in Fig. 1D, the double layer effect causes the underside of the lower resin member 40. The upward warping (from the broken line to the solid line), that is, the bottom surface 22 of the covering structure 20 is warped upward from the lower surface 12 of the LED wafer 10 (i.e., starting from the lower surface 12, the bottom surface 22 is gradually bent upward). ), forming a concave shape. This is the second main mechanism for forming the bottom of the light-emitting device 1A into a concave shape.

又，較佳地，下層樹脂部件40更包含一無機螢光材料，由於螢光材料的熱膨脹係數低於樹脂材料，故會造成下層樹脂部件40具有較低的整體熱膨脹係數；較佳地，上層樹脂部件30不包含螢光材料，故其整體熱膨脹係數高於下層樹脂部件40之整體熱膨脹係數。因此，在形成本發明所揭露之發光裝置1A之製造過程中，上層樹脂部件30在由熱固化溫度降溫至室溫之過程中，因其具有較高的熱膨脹係數而造成體積收縮量大於下層樹脂部件40之體積收縮量；在此冷卻收縮作用之下，上層樹脂部件30將產生明顯大於下層樹脂部件40的體積收縮量，因而形成下層樹脂部件40與上層樹脂部件30間之應力而造成另一雙層板效應(bimorph effect)，此效應進而形成更大之凹形。此為使發光裝置1A底部形成凹形的第三主要機制。 Further, preferably, the lower resin member 40 further comprises an inorganic fluorescent material, and since the thermal expansion coefficient of the fluorescent material is lower than that of the resin material, the lower resin member 40 has a lower overall thermal expansion coefficient; preferably, the upper layer The resin member 30 does not contain a fluorescent material, so its overall thermal expansion coefficient is higher than the overall thermal expansion coefficient of the lower resin member 40. Therefore, in the process of forming the light-emitting device 1A disclosed in the present invention, the upper resin member 30 is caused to have a volume shrinkage larger than that of the lower layer resin due to its high coefficient of thermal expansion during cooling from the heat curing temperature to room temperature. The volume contraction amount of the member 40; under this cooling shrinkage, the upper resin member 30 will produce a volume shrinkage amount significantly larger than that of the lower resin member 40, thereby forming a stress between the lower resin member 40 and the upper resin member 30 to cause another A bimorph effect, which in turn creates a larger concave shape. This is the third main mechanism for forming the bottom of the light-emitting device 1A into a concave shape.

需補充說明的是，前述三項主要機制也會造成上層樹脂部件30的頂面(包覆結構20之頂面21)向下凹陷(即向LED晶片10之上表面11 凹陷)，或造成上層樹脂部件30的頂面之部分區域向下凹陷。 It should be noted that the above three main mechanisms also cause the top surface of the upper resin member 30 (the top surface 21 of the cladding structure 20) to be recessed downward (ie, toward the upper surface 11 of the LED wafer 10). The recess) or the partial area of the top surface of the upper resin member 30 is recessed downward.

藉此，包覆結構20的底面22為向上翹曲者，故該底面22之下方可提供一凹形(recess)空間。當發光裝置1A藉由回流銲接(reflow soldering)或共晶接合(eutectic bonding)等方式連接至基板等結構(圖未示)時，包覆結構20雖然會受熱膨脹而導致底面22向下形變，但底面22所提供的凹形空間可容納包覆結構20受熱後的向下形變量，故底面22不會將LED晶片電極組14拱起而導致電極組14與基板銲墊(圖未示)之間隙過大而造成銲料接觸不良；因此，具凹形設計之發光裝置1A的電極組14可確實地經由銲料與基板相連接。 Thereby, the bottom surface 22 of the covering structure 20 is upwardly warped, so that a recess space can be provided below the bottom surface 22. When the light-emitting device 1A is connected to a substrate or the like (not shown) by reflow soldering or eutectic bonding, the cover structure 20 is thermally expanded to cause the bottom surface 22 to be deformed downward. However, the concave space provided by the bottom surface 22 can accommodate the downward deformation of the cladding structure 20 after being heated, so that the bottom surface 22 does not arch the LED wafer electrode assembly 14 to cause the electrode assembly 14 and the substrate pad (not shown). The gap is too large to cause poor solder contact; therefore, the electrode group 14 of the concave-shaped light-emitting device 1A can be surely connected to the substrate via solder.

另一方面，在回流銲接或共晶接合等加熱過程中，由於發光裝置1A具凹形設計，使LED晶片10之電極組14與基板銲墊之間可保持良好的接觸間隙，如此可避免介於電極組14與基板銲墊之間的銲料(圖未示)被外力拉伸，使銲料可保持其厚度及整體材料之緻密度，因此，銲料的內部不會因受到外力拉伸而產生空孔或材料不連續等缺陷，而造成銲接接觸不良，進而導致熱傳導率的下降。又，當發光裝置1A於點亮運作時，會產生大量之熱能，故，當發光裝置1A與基板具有良好銲接接點時，發光裝置1A之電極組14與基板之間的熱阻可較低，使得發光裝置1A之LED晶片10運作時所產生的熱可較快速地傳導至基板。藉此，發光裝置1A在運作時可具有較低的接合點溫度(junction temperature)，其可提升發光裝置1A量子轉換效率(quantum efficiency)，且能夠增加發光裝置1A的可靠度以及使用壽命。 On the other hand, in the heating process such as reflow soldering or eutectic bonding, since the light-emitting device 1A has a concave design, a good contact gap can be maintained between the electrode group 14 of the LED wafer 10 and the substrate pad, so that the medium can be avoided. The solder (not shown) between the electrode group 14 and the substrate pad is stretched by an external force, so that the solder can maintain its thickness and the density of the entire material. Therefore, the inside of the solder is not pulled by the external force. Defects such as discontinuities in the holes or materials cause poor solder contact, which in turn leads to a decrease in thermal conductivity. Moreover, when the light-emitting device 1A is in the lighting operation, a large amount of thermal energy is generated. Therefore, when the light-emitting device 1A has a good solder joint with the substrate, the thermal resistance between the electrode group 14 of the light-emitting device 1A and the substrate can be low. The heat generated when the LED wafer 10 of the light-emitting device 1A operates can be conducted to the substrate relatively quickly. Thereby, the light-emitting device 1A can have a lower junction temperature during operation, which can increase the quantum efficiency of the light-emitting device 1A, and can increase the reliability and the service life of the light-emitting device 1A.

此外，良好的銲接品質亦可改善LED晶片10之電極組14與基 板銲墊間之歐姆接觸(ohmic contact)，可降低LED晶片10所需之正向電壓，進而減少發光裝置的功率損耗，如此可獲得較高的發光效率(efficacy)。 In addition, good solder quality can also improve the electrode set 14 and base of the LED chip 10. The ohmic contact between the pad pads reduces the forward voltage required for the LED chip 10, thereby reducing the power loss of the illuminating device, thus achieving higher luminous efficiency.

由上述可知，發光裝置1A的底面22下方之凹形可提供的特點至少有：使發光裝置1A與基板之間具有良好的銲接品質，進而使發光裝置1A可擁有更佳的可靠度以及發光效率等。 It can be seen from the above that the concave shape under the bottom surface 22 of the light-emitting device 1A can provide at least a good welding quality between the light-emitting device 1A and the substrate, thereby enabling the light-emitting device 1A to have better reliability and luminous efficiency. Wait.

第1E圖所示為一數值模擬範例，此為業界現有之無「凹形設計之發光裝置」於回流銲接製程之高溫環境(約250℃)下的模擬分析結果，其中，包覆結構20之長度為1500微米、厚度為600微米(下層樹脂部件40之厚度為80微米)，LED晶片10之長度為850微米、厚度為150微米；當發光裝置於回流銲接製程中承受高溫時，將導致其各個部件之體積膨脹而使外型產生形變，其中，包覆結構20之形變量遠大於LED晶片10之形變量，在第1E圖所示之模擬範例下，發光裝置由室溫25℃下虛線所顯示之外形膨脹成為250℃下實線所顯示之外形，各個部件之體積膨脹導致了包覆結構20之底面22由原本與LED晶片10之下表面12齊平的水平位置向下形變20.2微米，此形變量將使發光裝置之電極組14被拱起，這將導致電極組14與基板銲墊之間的接觸間隙過大，使無凹形設計之發光裝置無法獲得良好的銲接品質。 FIG. 1E is a numerical simulation example, which is a simulation analysis result of a conventional high-temperature environment (about 250 ° C) in a reflow soldering process without a "concave design light-emitting device", wherein the cladding structure 20 The length is 1500 micrometers and the thickness is 600 micrometers (the thickness of the lower resin component 40 is 80 micrometers), and the length of the LED wafer 10 is 850 micrometers and the thickness is 150 micrometers; when the light-emitting device is subjected to high temperature in the reflow soldering process, it will cause The volume of each component is expanded to deform the shape, wherein the shape variable of the cladding structure 20 is much larger than the shape variable of the LED chip 10. In the simulation example shown in FIG. 1E, the light-emitting device has a dotted line at room temperature of 25 ° C. The external expansion shown is a shape shown by a solid line at 250 ° C, and the volume expansion of each member causes the bottom surface 22 of the cladding structure 20 to be deformed downward by a horizontal position which is originally flush with the lower surface 12 of the LED wafer 10 by 20.2 μm. This shape variable will cause the electrode group 14 of the illuminating device to be arched, which will cause the contact gap between the electrode group 14 and the substrate pad to be too large, so that the illuminating device without the concave design cannot obtain good welding. Quality.

如第1F圖所示為另一數值模擬範例，此為本發明所揭露之具凹形設計之發光裝置1A於回流銲接製程之高溫環境(約250℃)下的模擬分析結果，其中，數值模擬設定條件相同於第1E圖所示之數值模擬範例；在室溫25℃下，具凹形設計之發光裝置1A之包覆結構20的底面22的向上翹曲量為20.9微米(凹形空間)，於回流銲接製程中，發光裝置1A由室溫25℃ 下虛線所顯示之外形膨脹成為250℃下實線所顯示之外形，此時包覆結構20之底面22向下形變19.5微米，其向下膨脹量小於凹形結構所提供之空間(即20.9微米)，因此，底面22不會使LED晶片電極組14被拱起，而造成電極組14與基板銲墊之接觸間隙過大，如此可使發光裝置1A獲得良好的銲接接觸品質。 FIG. 1F is another numerical simulation example, which is a simulation analysis result of the concave design of the light-emitting device 1A in the high-temperature environment (about 250 ° C) of the reflow soldering process, wherein the numerical simulation is performed. The setting conditions are the same as those of the numerical simulation example shown in FIG. 1E; at room temperature 25 ° C, the upward warping amount of the bottom surface 22 of the cladding structure 20 of the concave-shaped light-emitting device 1A is 20.9 μm (concave space). In the reflow soldering process, the light-emitting device 1A is at room temperature 25 ° C The outer shape expansion shown by the lower dotted line becomes the outer shape shown by the solid line at 250 ° C. At this time, the bottom surface 22 of the cladding structure 20 is deformed downward by 19.5 micrometers, and the downward expansion amount is smaller than the space provided by the concave structure (ie, 20.9 micrometers). Therefore, the bottom surface 22 does not cause the LED wafer electrode group 14 to be arched, and the contact gap between the electrode group 14 and the substrate pad is excessively large, so that the light-emitting device 1A can obtain good solder contact quality.

此外，LED晶片10之電極組14與基板銲墊之間的銲料接合面積可主要地反映出銲接接觸品質，銲料接合面積越大，表示銲接品質越佳，可使發光裝置1A與基板之間具有較低之熱阻，因此熱能可有效地透過基板傳導，不會因熱能累積而使發光裝置1A溫度過高。在一測試範例下，如下表所示，當銲料接合面積小於電極面積的70%時(測試條件一)，代表較差的銲接接觸品質，在發光裝置之上表面所量測到的溫度大於110℃；當銲料接合面積大於電極面積的95%時(測試條件三)，所量測到的上表面溫度小於105℃，其具有較佳之散熱效果；而在相同測試條件下，本發明所揭露之具凹形設計之發光裝置1A所量測到的上表面21之溫度為103℃，更低於測試條件三(銲料接合面積大於95%)之上表面溫度，此結果說明了本發明之凹形設計可明顯提升銲接品質，進而降低熱阻與操作溫度。 In addition, the solder bonding area between the electrode group 14 of the LED chip 10 and the substrate pad can mainly reflect the soldering contact quality, and the larger the solder bonding area, the better the soldering quality, and the light-emitting device 1A and the substrate can be provided. The lower thermal resistance, so that the thermal energy can be effectively transmitted through the substrate without causing the temperature of the light-emitting device 1A to be too high due to the accumulation of thermal energy. In a test example, as shown in the following table, when the solder joint area is less than 70% of the electrode area (test condition one), it represents a poor solder contact quality, and the temperature measured on the upper surface of the light-emitting device is greater than 110 ° C. When the solder joint area is greater than 95% of the electrode area (test condition 3), the measured upper surface temperature is less than 105 ° C, which has a better heat dissipation effect; and under the same test conditions, the present invention discloses The temperature of the upper surface 21 measured by the concave design of the light-emitting device 1A is 103 ° C, which is lower than the upper surface temperature of the test condition 3 (the solder joint area is greater than 95%), and the result indicates the concave design of the present invention. The welding quality can be significantly improved, thereby reducing the thermal resistance and operating temperature.

不同銲料接合面積下所量測之發光裝置上表面溫度之比較表： Comparison table of surface temperatures of illuminators measured under different solder joint areas:

發光裝置1A的底面22須達到一定的向上翹曲量，較佳地，底面22的向上翹曲量符合下述定義：翹曲的該底面22具有一邊緣221，該邊緣221與LED晶片10之立面13相距一水平距離X、與LED晶片10之下表面12(或底面22的最低點)相距一垂直距離Y，垂直距離Y與水平距離X的比例(即Y/X)不小於0.022。 The bottom surface 22 of the light-emitting device 1A has to reach a certain amount of upward warpage. Preferably, the upward warping amount of the bottom surface 22 conforms to the following definition: the bottom surface 22 of the warp has an edge 221, and the edge 221 and the LED chip 10 The façades 13 are separated by a horizontal distance X from the lower surface 12 of the LED wafer 10 (or the lowest point of the bottom surface 22) by a vertical distance Y, and the ratio of the vertical distance Y to the horizontal distance X (i.e., Y/X) is not less than 0.022.

此外，包覆結構20的尺寸會影響到其底面22的向上翹曲量。當包覆結構20的水平尺寸(寬度或長度)越大時，包覆結構20熱固化後，底面22的向上翹曲量(即垂直距離Y)也越大。當包覆結構20的垂直尺寸(厚度)增加時，包覆結構20熱固化後，其底面22的向上翹曲量(即垂直距離Y)亦會增加。 In addition, the size of the cladding structure 20 affects the amount of upward warpage of its bottom surface 22. When the horizontal dimension (width or length) of the cladding structure 20 is larger, the amount of upward warpage of the bottom surface 22 (i.e., the vertical distance Y) is also greater after the cladding structure 20 is thermally cured. When the vertical dimension (thickness) of the cladding structure 20 is increased, the amount of upward warpage of the bottom surface 22 (i.e., the vertical distance Y) is also increased after the cladding structure 20 is thermally cured.

然而，包覆結構20的厚度增加至一定程度後，底面22的向上翹曲量的增加將不明顯，這是因為此時靠近上端的包覆結構20的收縮將越來越不易影響到底面22的翹曲。因此較佳地，包覆結構20的頂面21與LED晶片10之上表面11係相距50至1000微米，以獲得較佳的整體效益。 However, after the thickness of the cladding structure 20 is increased to a certain extent, the increase in the amount of upward warpage of the bottom surface 22 will not be significant because the shrinkage of the cladding structure 20 near the upper end will become less and less susceptible to the bottom surface 22 at this time. Warp. Therefore, preferably, the top surface 21 of the cladding structure 20 is spaced from the upper surface 11 of the LED wafer 10 by 50 to 1000 microns to obtain a better overall benefit.

補充說明的是，在本實施例中，上層樹脂部件30與下層樹脂部件40都可讓光線通過，且兩者皆可選擇性地包含至少一螢光材料及/或光學散射性微粒(例如二氧化鈦，TiO2)，例如上層樹脂部件30被選擇不包含螢光材料或光學散射性微粒，而下層樹脂部件40被選擇僅包含螢光材料。如此，LED晶片10之光線通過下層樹脂部件40時可受螢光材料作用而改變其波長，但通過上層樹脂部件30時波長無明顯地變化。此外，上層樹脂部件30及下層樹脂部件40之每一者都可設置成一單層部件(如第1圖所示，由 樹脂材料固化一次所形成者)或多層部件(圖未示，由相同或不同的樹脂材料經分次固化所形成者)。 It should be noted that, in this embodiment, both the upper resin member 30 and the lower resin member 40 allow light to pass therethrough, and both may selectively include at least one fluorescent material and/or optical scattering particles (for example, titanium dioxide). TiO2), for example, the upper resin member 30 is selected not to contain the fluorescent material or the optical scattering fine particles, and the lower resin member 40 is selected to contain only the fluorescent material. As described above, when the light of the LED wafer 10 passes through the lower resin member 40, the wavelength of the light is changed by the action of the fluorescent material, but the wavelength does not significantly change when passing through the upper resin member 30. Further, each of the upper resin member 30 and the lower resin member 40 may be provided as a single layer member (as shown in FIG. 1 The resin material is cured once formed) or a multi-layered member (not shown, formed by the same or different resin materials by fractional curing).

再者，下層樹脂部件40可為以下所描述的結構外型(但不侷限於此)：下層樹脂部件40包含一頂部41、一側部42及一延伸部43，三者可為一體成型；頂部41覆蓋LED晶片10之上表面11，側部42覆蓋LED晶片10之立面13，而延伸部43則是自側部42向外延伸(即朝向遠離立面13之方向延伸)；側部42及延伸部43皆呈環狀，圍繞該LED晶片10。 Furthermore, the lower resin component 40 may be a structural appearance as described below (but not limited thereto): the lower resin component 40 includes a top portion 41, a side portion 42 and an extension portion 43, which may be integrally formed; The top portion 41 covers the upper surface 11 of the LED wafer 10, the side portion 42 covers the elevation 13 of the LED wafer 10, and the extension portion 43 extends outwardly from the side portion 42 (i.e., extends away from the elevation surface 13); Both the 42 and the extensions 43 are annular and surround the LED wafer 10.

以上是發光裝置1A的技術內容的說明，接著將說明依據本發明其他實施例的發光裝置的技術內容，而各實施例的發光裝置的技術內容應可互相參考，故相同的部分將省略或簡化。 The above is the description of the technical content of the light-emitting device 1A. Next, the technical contents of the light-emitting device according to other embodiments of the present invention will be described, and the technical contents of the light-emitting devices of the respective embodiments should be referred to each other, so that the same portions will be omitted or simplified. .

請參閱第2圖所示，其為依據本發明之第2較佳實施例之發光裝置的示意圖。發光裝置1B與前述發光裝置1A不同處至少在於，發光裝置1B的下層樹脂部件40包含一透光樹脂部件44與一反射樹脂部件45。反射樹脂部件45覆蓋於LED晶片10之立面13，但未覆蓋上表面11；透光樹脂部件44係同時覆蓋LED晶片10之上表面11及反射樹脂部件45之頂面451。其中，反射樹脂部件45之底面即為包覆結構20之底面22，自LED晶片10之下表面12向上翹曲。 Referring to Fig. 2, there is shown a schematic view of a light-emitting device according to a second preferred embodiment of the present invention. The light-emitting device 1B is different from the above-described light-emitting device 1A in that at least the lower resin member 40 of the light-emitting device 1B includes a light-transmissive resin member 44 and a reflective resin member 45. The reflective resin member 45 covers the façade 13 of the LED wafer 10 but does not cover the upper surface 11; the light-transmissive resin member 44 covers both the upper surface 11 of the LED wafer 10 and the top surface 451 of the reflective resin member 45. The bottom surface of the reflective resin member 45 is the bottom surface 22 of the cladding structure 20, and is warped upward from the lower surface 12 of the LED wafer 10.

由於反射樹脂部件45覆蓋立面13，因此LED晶片10所發射的光線將僅會經由透光樹脂部件44及上層樹脂部件30傳遞，可減少LED晶片10所發射的光線從立面13射出，以使發光裝置1B的發光範圍較為集中。 Since the reflective resin member 45 covers the elevation 13 , the light emitted from the LED wafer 10 will only be transmitted through the transparent resin member 44 and the upper resin member 30, and the light emitted from the LED wafer 10 can be reduced from the elevation 13 to The light-emitting range of the light-emitting device 1B is concentrated.

請參閱第3圖所示，其為依據本發明之第3較佳實施例之發光裝置的示意圖。發光裝置1C與前述發光裝置1B不同處至少在於，發光裝置 1C的下層樹脂部件40中，透光樹脂部件44覆蓋上表面11，而反射樹脂部件45同時覆蓋LED晶片10之立面13及透光樹脂部件44之側面441。如此，反射樹脂部件45可進一步防止LED晶片10所發射出的光線從透光樹脂部件44之側面441射出，可使發光裝置1C的發光範圍更為集中。 Referring to Fig. 3, there is shown a schematic view of a light-emitting device according to a third preferred embodiment of the present invention. The light-emitting device 1C is different from the light-emitting device 1B at least in that the light-emitting device In the lower resin member 40 of 1C, the light transmissive resin member 44 covers the upper surface 11, and the reflective resin member 45 covers both the façade 13 of the LED wafer 10 and the side surface 441 of the light transmissive resin member 44. In this manner, the reflective resin member 45 can further prevent the light emitted from the LED wafer 10 from being emitted from the side surface 441 of the transparent resin member 44, and the light-emitting range of the light-emitting device 1C can be more concentrated.

請參閱第4圖所示，其為依據本發明之第4較佳實施例之發光裝置的示意圖。該發光裝置1D可包含LED晶片10及一單層樹脂部件50，其中，LED晶片10與前述實施例1A之LED晶片10相同，而單層樹脂部件50類似於前述第1較佳實施例之包覆結構20，唯單層樹脂部件50在垂直方向(厚度方向)上僅具有單一層樹脂，而包覆結構20具有至少兩層樹脂(即上層樹脂部件30及下層樹脂部件40)。 Referring to Fig. 4, there is shown a schematic view of a light-emitting device according to a fourth preferred embodiment of the present invention. The light-emitting device 1D may include an LED wafer 10 and a single-layer resin member 50, wherein the LED wafer 10 is the same as the LED wafer 10 of the foregoing Embodiment 1A, and the single-layer resin member 50 is similar to the package of the first preferred embodiment described above. In the covering structure 20, only the single-layer resin member 50 has only a single layer of resin in the vertical direction (thickness direction), and the covering structure 20 has at least two layers of resin (i.e., the upper resin member 30 and the lower resin member 40).

外觀上單層樹脂部件50可具有一頂面51、一底面52及一側面53；頂面51與底面52為相對且相反設置，而側面53形成於頂面51與底面52之間，且側面53還連接頂面51與底面52，該側面53是沿著頂面51與底面52之輪廓而形成，故該側面53相對於頂面51與底面52為環狀(例如矩型環)。 The appearance of the single-layer resin member 50 may have a top surface 51, a bottom surface 52 and a side surface 53; the top surface 51 and the bottom surface 52 are opposite and oppositely disposed, and the side surface 53 is formed between the top surface 51 and the bottom surface 52, and the side surface 53 is also connected to the top surface 51 and the bottom surface 52. The side surface 53 is formed along the contour of the top surface 51 and the bottom surface 52. Therefore, the side surface 53 is annular with respect to the top surface 51 and the bottom surface 52 (for example, a rectangular ring).

單層樹脂部件50位置上係設置於LED晶片10上，且覆蓋LED晶片10之上表面11及立面13，使得單層樹脂部件50可保護LED晶片10，使其上表面11及立面13較不會直接地接觸到環境物而遭受汙染或損壞。如此，單層樹脂部件50的頂面51與LED晶片10的上表面11會相距，而單層樹脂部件50的側面53亦會與LED晶片10的立面13相距。 The single-layer resin member 50 is disposed on the LED wafer 10 at a position and covers the upper surface 11 and the elevation 13 of the LED wafer 10 so that the single-layer resin member 50 can protect the LED wafer 10 such that its upper surface 11 and elevation 13 Less susceptible to direct exposure to environmental objects and contamination or damage. Thus, the top surface 51 of the single-layer resin member 50 is spaced from the upper surface 11 of the LED wafer 10, and the side surface 53 of the single-layer resin member 50 is also spaced from the elevation 13 of the LED wafer 10.

較佳地，於LED晶片10之上表面11與單層樹脂部件50之頂面51之間包含一螢光材料，使LED晶片10經由上表面11所發出之藍光可經由螢光材料部份地轉換波長；較佳地，於LED晶片10之立面13與單層樹脂部 件50之側面53之間包含一螢光材料，使LED晶片10經由立面13所發出之藍光可經由螢光材料部份地轉換波長；藉此，上表面11與立面13處所產生的不同波長之光線可以適當比例混合而形成所需顏色之光線，例如不同色溫之白光。較佳地，單層樹脂部件50不會覆蓋LED晶片10的下表面12，以使得電極組14可更適當地暴露出。 Preferably, a fluorescent material is included between the upper surface 11 of the LED chip 10 and the top surface 51 of the single-layer resin member 50, so that the blue light emitted by the LED wafer 10 via the upper surface 11 can be partially partially via the fluorescent material. Conversion wavelength; preferably, the façade 13 of the LED wafer 10 and the single layer resin portion A phosphor material is included between the sides 53 of the member 50, so that the blue light emitted by the LED chip 10 via the façade 13 can partially convert the wavelength via the phosphor material; thereby, the upper surface 11 is different from the surface 13 Light of a wavelength can be mixed in an appropriate ratio to form light of a desired color, such as white light of a different color temperature. Preferably, the single layer resin member 50 does not cover the lower surface 12 of the LED wafer 10 so that the electrode group 14 can be more appropriately exposed.

單層樹脂部件50亦是經由熱固化所形成者，因此單層樹脂部件50於熱固化過程中會產生化學反應所造成之一次性的體積收縮；又，LED晶片10屬無機材料，其熱膨脹係數遠小於形成單層樹脂部件50之材料熱膨脹係數，因此，於完成熱固化後從熱固化溫度降至室溫的冷卻過程中，單層樹脂部件50亦會因冷縮熱脹之物理現象產生明顯大於LED晶片10的體積收縮量。 The single-layer resin member 50 is also formed by thermal curing, so that the single-layer resin member 50 generates a one-time volume shrinkage caused by a chemical reaction during thermal curing; in addition, the LED wafer 10 is an inorganic material having a thermal expansion coefficient. It is much smaller than the coefficient of thermal expansion of the material forming the single-layered resin member 50. Therefore, in the cooling process from the heat-curing temperature to the room temperature after completion of the heat curing, the single-layered resin member 50 is also apparent due to the physical phenomenon of shrinkage and thermal expansion. It is larger than the volume contraction amount of the LED wafer 10.

因此，發光裝置1D在單層樹脂部件50之熱固化反應以及其後的降溫過程中，其體積收縮量會遠大於LED晶片10的體積收縮量，此現象會使向內收縮的單層樹脂部件50拉扯其底面52往上翹曲而形成一凹形結構(此即形成發光裝置1A之凹形的第一主要機制)，即底面52自LED晶片10之下表面12(或自底面52之最低點)漸漸地往上彎曲。同時，樹脂材料的內縮也會使單層樹脂部件50的頂面51向下凹陷(即向LED晶片10之上表面11凹陷)，或使單層樹脂部件50的頂面51之部分區域向下凹陷。 Therefore, the volume shrinkage of the light-emitting device 1D during the heat curing reaction of the single-layer resin member 50 and the subsequent temperature lowering process is much larger than the volume shrinkage amount of the LED wafer 10, which causes the inwardly contracted single-layer resin member. 50 pulls its bottom surface 52 upwardly to form a concave structure (this is the first major mechanism for forming the concave shape of the light-emitting device 1A), that is, the bottom surface 52 is from the lower surface 12 of the LED wafer 10 (or lowest from the bottom surface 52). Point) gradually bend upwards. At the same time, the retraction of the resin material causes the top surface 51 of the single-layer resin member 50 to be recessed downward (i.e., recessed toward the upper surface 11 of the LED wafer 10), or a partial region of the top surface 51 of the single-layer resin member 50 is directed. Lower depression.

較佳地，該底面52的向上翹曲量係定義為：翹曲的該底面52具有一邊緣521，該邊緣521與LED晶片10之立面13相距一水平距離X、與LED晶片10之下表面12(或底面52的最低點)相距一垂直距離Y，垂直距離Y與水平距離X的比例(即Y/X)不小於0.022。 Preferably, the upward warping amount of the bottom surface 52 is defined as: the warped bottom surface 52 has an edge 521 which is at a horizontal distance X from the elevation 13 of the LED chip 10 and below the LED wafer 10. The surface 12 (or the lowest point of the bottom surface 52) is separated by a vertical distance Y, and the ratio of the vertical distance Y to the horizontal distance X (i.e., Y/X) is not less than 0.022.

在一數值模擬範例下(數值模擬設定條件均相同於第1較佳實施例之包覆結構20和LED晶片10之對應者)，具凹形設計之發光裝置1D於室溫25℃時，單層樹脂部件50的底面52的向上翹曲量(即凹形空間)為17.8微米。於回流銲接250℃的製程環境中，單層樹脂部件50受熱膨脹後其底面52向下形變17.0微米，其向下膨脹量小於凹形空間。由此可知，發光裝置1D放置於基板上進行回流銲接等加熱過程時，其底面52亦不會因受熱膨脹而使LED晶片電極組14與基板銲墊之接觸間隙過大，故可使發光裝置1D獲得良好的銲接品質。 In a numerical simulation example (the numerical simulation setting conditions are the same as those of the cladding structure 20 and the LED wafer 10 of the first preferred embodiment), the light-emitting device 1D having a concave design is at room temperature of 25 ° C, The amount of upward warpage of the bottom surface 52 of the layer resin member 50 (i.e., the concave space) was 17.8 μm. In the process environment of reflow soldering at 250 ° C, the single-layered resin member 50 is thermally expanded and its bottom surface 52 is deformed downward by 17.0 μm, and its downward expansion amount is smaller than that of the concave space. Therefore, when the light-emitting device 1D is placed on the substrate and subjected to a heating process such as reflow soldering, the bottom surface 52 of the light-emitting device 1D is not excessively heated due to thermal expansion, so that the contact gap between the LED wafer electrode group 14 and the substrate pad is too large, so that the light-emitting device 1D can be made. Get good welding quality.

與第1較佳實施例相似，單層樹脂部件50的厚度增加至一定程度後，底面52的向上翹曲量的增加將不明顯，因此較佳地，單層樹脂部件50的頂面51與LED晶片10之上表面11係相距50至1000微米，以獲得較佳的整體效益。 Similar to the first preferred embodiment, after the thickness of the single-layer resin member 50 is increased to a certain extent, the increase in the amount of upward warpage of the bottom surface 52 will be inconspicuous, and therefore, preferably, the top surface 51 of the single-layer resin member 50 is The upper surface 11 of the LED wafer 10 is spaced 50 to 1000 microns apart for better overall benefit.

請參閱第5圖所示，其為依據本發明之第5較佳實施例之發光裝置的示意圖。發光裝置1E與前述發光裝置1D不同處至少在於，發光裝置1E的單層樹脂部件50包含一透光樹脂部件60及一反射樹脂部件70。透光樹脂部件60僅覆蓋LED晶片10之上表面11，反射樹脂部件70同時覆蓋LED晶片10之立面13及透光樹脂部件60之側面61。 Referring to Fig. 5, there is shown a schematic view of a light-emitting device according to a fifth preferred embodiment of the present invention. The light-emitting device 1E is different from the light-emitting device 1D at least in that the single-layer resin member 50 of the light-emitting device 1E includes a light-transmissive resin member 60 and a reflective resin member 70. The light-transmissive resin member 60 covers only the upper surface 11 of the LED wafer 10, and the reflective resin member 70 covers both the façade 13 of the LED wafer 10 and the side surface 61 of the light-transmissive resin member 60.

由於反射樹脂部件70覆蓋立面13及透光樹脂部件60之側面61，可阻止LED晶片10所發射的光線將從立面13及側面61射出，而使發光裝置1E的發光範圍較集中。 Since the reflective resin member 70 covers the façade 13 and the side surface 61 of the light-transmissive resin member 60, the light emitted from the LED wafer 10 can be prevented from being emitted from the façade 13 and the side surface 61, and the light-emitting range of the light-emitting device 1E can be concentrated.

請參閱第6圖所示，其為依據本發明之第6較佳實施例之發光裝置的示意圖。發光裝置1F與發光裝置1E不同處至少在於，發光裝置1F的 反射樹脂部件70覆蓋於立面13，而透光樹脂部件60係同時覆蓋LED晶片10之上表面11及反射樹脂部件70之上表面71。藉此，發光裝置1F亦可具有較集中的發光範圍。 Please refer to FIG. 6, which is a schematic diagram of a light-emitting device according to a sixth preferred embodiment of the present invention. The light-emitting device 1F is different from the light-emitting device 1E at least in that the light-emitting device 1F The reflective resin member 70 covers the facade 13 while the light-transmissive resin member 60 covers both the upper surface 11 of the LED wafer 10 and the upper surface 71 of the reflective resin member 70. Thereby, the light-emitting device 1F can also have a relatively concentrated light-emitting range.

綜上，各實施例的發光裝置1A-1F在結構上係有所不同，但皆具有向上翹曲的底面22及52，以形成凹形設計，使得發光裝置1A至1F任一者可有效改善銲接失敗或銲接品質不良等相關缺點，進而獲得更佳的可靠度與發光效率。 In summary, the light-emitting devices 1A-1F of the respective embodiments are different in structure, but each has an upwardly warped bottom surface 22 and 52 to form a concave design, so that any of the light-emitting devices 1A to 1F can be effectively improved. Corresponding shortcomings such as solder failure or poor solder quality, resulting in better reliability and luminous efficiency.

接著將說明依據本發明的發光裝置的製造方法，該製造方法可製造出相同或類似於上述實施例的發光裝置1A-1F，故製造方法的技術內容與發光裝置1A-1F的技術內容可相互參考。 Next, a description will be given of a method of manufacturing a light-emitting device according to the present invention, which can manufacture the light-emitting devices 1A to 1F which are the same as or similar to the above-described embodiments, so that the technical contents of the manufacturing method and the technical contents of the light-emitting devices 1A to 1F can mutually reference.

發光裝置的製造方法可包含兩大階段：將一或多個熱固化材料覆蓋一LED晶片之上表面及立面；以及將熱固化材料加熱，使熱固化材料固化並收縮，以形成具有一向上翹曲的底面之包覆結構。各階段的技術內容將配合各較佳實施例來進一步說明(製造方法的各實施例的技術內容亦應可互相參考，故相同的部分將省略或簡化)。 The manufacturing method of the illuminating device may comprise two major stages: covering one or more thermosetting materials on the upper surface and the façade of an LED wafer; and heating the thermosetting material to cure and shrink the thermosetting material to form an upward direction The cladding structure of the warped bottom surface. The technical content of each stage will be further explained in conjunction with the preferred embodiments (the technical content of each embodiment of the manufacturing method should also be referred to each other, so the same parts will be omitted or simplified).

請參閱第7A圖至第7E圖所示，為本發明的製造方法的第1較佳實施例的步驟示意圖。 Please refer to FIGS. 7A to 7E for a schematic view of the steps of the first preferred embodiment of the manufacturing method of the present invention.

如第7A圖所示，首先提供一離型材料80，而離型材料80還可放置於一支撐結構(例如矽基板或玻璃基板，圖未示)上；接者，將一或多個LED晶片10放置在離型材料80上。較佳地，LED晶片10之電極組14可陷入至離型材料80中，使LED晶片10之下表面12被離型材料80遮蔽，如此電極組14最終可更適當地被暴露出來以利電性接合。 As shown in FIG. 7A, a release material 80 is first provided, and the release material 80 can also be placed on a support structure (for example, a germanium substrate or a glass substrate, not shown); and one or more LEDs are connected. The wafer 10 is placed on a release material 80. Preferably, the electrode assembly 14 of the LED wafer 10 can be trapped into the release material 80 such that the lower surface 12 of the LED wafer 10 is shielded by the release material 80 such that the electrode assembly 14 can ultimately be more properly exposed for power Sexual engagement.

如第7B圖所示，接著將一下層樹脂材料40’(即一熱固化材料，可對應為第1A圖所示的發光裝置1A之下層樹脂部件40之製造材料)覆蓋於LED晶片10之上表面11與立面13；此步驟中，下層樹脂材料40’尚未固化，且此步驟可藉由噴塗(spraying)或旋轉塗佈(spin coating)等製程來達成。 As shown in FIG. 7B, a lower layer of the resin material 40' (i.e., a heat-curable material which can correspond to the material of the underlying resin member 40 of the light-emitting device 1A shown in FIG. 1A) is overlaid on the LED wafer 10. The surface 11 and the facade 13; in this step, the underlying resin material 40' is not yet cured, and this step can be achieved by a process such as spraying or spin coating.

接著對下層樹脂材料40’加熱至一定溫度(例如150℃，但不限定)，並保持在該溫度於一定時間，使得該下層樹脂材料40’開始熱固化並產生體積收縮。當熱固化完成後(且冷卻後)，可形成對應第1A圖所示的發光裝置1A之下層樹脂部件40，此時即發生形成凹型結構的第一主要機制。較佳地，下層樹脂材料40’包含一螢光材料，申請人的臺灣專利證書號I508331所揭露的螢光層的形成方法，非常適用於此步驟之製程，該臺灣專利的技術內容以引用方式全文併入本文。 Next, the lower resin material 40' is heated to a certain temperature (e.g., 150 ° C, but not limited), and maintained at this temperature for a certain period of time, so that the underlying resin material 40' starts to thermally cure and causes volume shrinkage. When the thermal curing is completed (and after cooling), the lower resin member 40 corresponding to the light-emitting device 1A shown in Fig. 1A can be formed, and at this time, the first main mechanism for forming the concave structure occurs. Preferably, the underlying resin material 40' comprises a fluorescent material, and the method for forming the phosphor layer disclosed in the applicant's Taiwan Patent No. I508331 is very suitable for the process of this step, and the technical content of the Taiwan patent is cited by way of reference. The full text is incorporated herein.

如第7C圖所示，在已固化的下層樹脂材料40’上接著堆疊一上層樹脂材料30’(即另一熱固化材料，可對應為第1A圖所示的發光裝置1A之上層樹脂部件30的製造材料)；此步驟中，上層樹脂材料30’尚未固化，且此步驟亦可藉由噴塗、印刷、或點膠(dispensing)等製程來達成。 As shown in Fig. 7C, an upper resin material 30' (i.e., another heat curing material) is subsequently laminated on the cured lower resin material 40', which corresponds to the upper resin member 30 of the light-emitting device 1A shown in Fig. 1A. The manufacturing material); in this step, the upper resin material 30' is not yet cured, and this step can also be achieved by a process such as spraying, printing, or dispensing.

當堆疊完成後，開始對上層樹脂材料30’加熱至一定溫度，使上層樹脂材料30’受熱固化並產生體積收縮。當熱固化完成後(且冷卻後)，可形成對應第1A圖所示的發光裝置1A之上層樹脂部件30，且固化後的上層樹脂材料30’與已固化的下層樹脂材料40’之間將發生形成凹型結構的第二與第三主要機制，使底面22更向上翹曲；具體的原因可參考前述發光裝置1A的相關段落的說明。 When the stacking is completed, the upper resin material 30' is heated to a certain temperature to thermally cure the upper resin material 30' and to cause volume shrinkage. When the thermal curing is completed (and after cooling), the upper resin member 30 corresponding to the light-emitting device 1A shown in FIG. 1A can be formed, and between the cured upper resin material 30' and the cured lower resin material 40'. The second and third main mechanisms for forming the concave structure occur, causing the bottom surface 22 to warp more upwards; for specific reasons, reference may be made to the description of the relevant paragraph of the foregoing light-emitting device 1A.

固化後的下層樹脂材料40’及上層樹脂材料30’可形成一或多個具有向上翹曲的底面22之包覆結構20’，其可對應第1A圖所示的發光裝置1A的包覆結構20。 The cured lower layer resin material 40' and the upper layer resin material 30' may form one or more cladding structures 20' having an upwardly warped bottom surface 22, which may correspond to the cladding structure of the light-emitting device 1A shown in FIG. 20.

如第7D圖所示，當上層樹脂材料30’與下層樹脂材料40’固化後，可將離型材料80移除，此時應力釋放後，多個彼此相連的包覆結構20’通常會呈現一曲面；接著如第7E圖所示，將相連的包覆結構20’進行切割，以便得到複數個發光裝置1A’，可對應第1A圖所示的發光裝置1A。 As shown in FIG. 7D, when the upper resin material 30' and the lower resin material 40' are cured, the release material 80 can be removed, and after the stress is released, a plurality of adjacent coating structures 20' are usually presented. A curved surface; then, as shown in Fig. 7E, the connected cladding structure 20' is cut to obtain a plurality of light-emitting devices 1A', which can correspond to the light-emitting device 1A shown in Fig. 1A.

由上述可知，發光裝置1A’在製造時，係重複至少兩次熱固化的步驟，使至少二個熱固化材料依序固化，以形成具有向上翹曲的底面22之包覆結構20’。 As apparent from the above, the light-emitting device 1A' is manufactured by repeating at least two steps of thermal curing to sequentially cure at least two heat-curable materials to form a covering structure 20' having a bottom surface 22 which is warped upward.

請參閱第8A圖至第8F圖所示，為本發明的製造方法的第2較佳實施例的步驟示意圖。 Please refer to FIGS. 8A to 8F for a schematic view showing the steps of the second preferred embodiment of the manufacturing method of the present invention.

如第8A圖所示，首先將一或多個LED晶片10放置在離型材料80上，接著如第8B圖所示，將複數個已固化的透光樹脂材料44’分別覆蓋LED晶片10之上表面11，其中，可透過熱固性黏膠(例如矽膠，圖未示)將透光樹脂材料44’黏貼至LED晶片10之上表面11，然後加熱使透光樹脂材料44’與LED晶片10更穩固地貼合在一起。 As shown in FIG. 8A, one or more LED wafers 10 are first placed on the release material 80, and then, as shown in FIG. 8B, a plurality of cured light-transmissive resin materials 44' are respectively covered by the LED wafer 10. The upper surface 11, wherein the transparent resin material 44' is adhered to the upper surface 11 of the LED wafer 10 through a thermosetting adhesive (for example, silicone, not shown), and then heated to make the transparent resin material 44' and the LED wafer 10 more Firmly fit together.

接著如第8C圖所示，將反射樹脂材料45’覆蓋於LED晶片10之立面13以及透光樹脂材料44’之側面441’(可對應為第3圖所示的發光裝置1C之透光樹脂部件44之側面441)，並對反射樹脂材料45’加熱使其固化產生體積收縮(反射樹脂材料45’與立面13之間發生第一主要機制，且透光樹脂材料44’發生溫度變化所導致之體積收縮)。固化後的反射樹脂材料45’可對 應第3圖所示的發光裝置1C的反射樹脂部件45，且固化後的反射樹脂材料45’的底面22將自LED晶片10之下表面12向上翹曲(圖未示)。 Next, as shown in FIG. 8C, the reflective resin material 45' is covered on the façade 13 of the LED wafer 10 and the side surface 441' of the light-transmissive resin material 44' (corresponding to the light transmission of the light-emitting device 1C shown in FIG. The side surface 441) of the resin member 44 heats the reflective resin material 45' to cause volume shrinkage (the first main mechanism occurs between the reflective resin material 45' and the facade 13 and the temperature changes of the light-transmitting resin material 44' The resulting volume shrinkage). The cured reflective resin material 45' can be The reflective resin member 45 of the light-emitting device 1C shown in Fig. 3, and the bottom surface 22 of the cured reflective resin material 45' will be warped upward from the lower surface 12 of the LED wafer 10 (not shown).

下一步如第8D圖所示，在已固化的透光樹脂材料44’及反射樹脂材料45’上堆疊一上層樹脂材料30’，並對上層樹脂材料30’加熱至使其固化產生體積收縮，此時發生形成發凹型結構的第二與第三主要機制，進而帶動反射樹脂材料45’之底面22更向上翹曲。 Next, as shown in FIG. 8D, an upper resin material 30' is stacked on the cured light-transmissive resin material 44' and the reflective resin material 45', and the upper resin material 30' is heated to solidify to cause volume shrinkage. At this time, the second and third main mechanisms for forming the concave structure are generated, and the bottom surface 22 of the reflective resin material 45' is further warped upward.

固化後的上層樹脂材料30’、透光樹脂材料44’及反射樹脂材料45’可形成一或多個具有向上翹曲的底面22之包覆結構20’。然後如第8E圖所示，將離形材料80移除，再如第8F圖所示，將相連的包覆結構20’進行切割，以便得到複數個發光裝置1C’，可對應第3圖所示的發光裝置1C。 The cured upper resin material 30', light transmissive resin material 44', and reflective resin material 45' may form one or more cladding structures 20' having an upwardly warped bottom surface 22. Then, as shown in FIG. 8E, the release material 80 is removed, and as shown in FIG. 8F, the connected cladding structure 20' is cut to obtain a plurality of light-emitting devices 1C', which can correspond to FIG. The light-emitting device 1C is shown.

補充說明的是，本發明的製造方法的第2實施例中，若省略第8D圖所示的步驟時(即省略上層樹脂材料30’)，所製造出的發光裝置可對應如第5圖所示的發光裝置1E。 In addition, in the second embodiment of the manufacturing method of the present invention, when the step shown in FIG. 8D is omitted (that is, the upper resin material 30' is omitted), the light-emitting device manufactured can correspond to FIG. The illustrated light-emitting device 1E.

再者，本發明的製造方法的第2實施例中，若在完成第8A圖所示的步驟後，接著進行第8C圖所示的相應步驟，形成一反射樹脂材料45’使其覆蓋LED晶片10之立面13，但不覆蓋LED晶片10之上表面11，然後加熱使反射樹脂材料45’固化，接著，形成一透光樹脂材料44’使其同時覆蓋LED晶片10之上表面11與反射樹脂材料45’之上表面，如此再接續如第8D圖至第8F所示之相應步驟，所製造出的發光裝置即可對應第2圖所示的發光裝置1B；其中，若省略第8D圖所示的相應步驟(即省略上層樹脂材料30’)，所製造出的發光裝置即可對應第6圖所示的發光裝置1F。 Further, in the second embodiment of the manufacturing method of the present invention, after the step shown in FIG. 8A is completed, the corresponding step shown in FIG. 8C is performed to form a reflective resin material 45' to cover the LED wafer. The façade 13 of 10, but not covering the upper surface 11 of the LED wafer 10, is then heated to cure the reflective resin material 45', and then a transparent resin material 44' is formed to simultaneously cover the upper surface 11 of the LED wafer 10 and reflect The upper surface of the resin material 45' is thus connected to the corresponding steps shown in Figs. 8D to 8F, and the manufactured light-emitting device can correspond to the light-emitting device 1B shown in Fig. 2; The corresponding step (i.e., the upper resin material 30' is omitted), the light-emitting device manufactured can correspond to the light-emitting device 1F shown in Fig. 6.

請參閱第9A圖至第9D圖所示，為本發明的製造方法的第3 較佳實施例的步驟示意圖。 Please refer to FIGS. 9A to 9D, which is the third method of the manufacturing method of the present invention. A schematic diagram of the steps of the preferred embodiment.

如第9A圖所示，將一或多個LED晶片10放置在離型材料80上；接著如第9B圖所示，將一樹脂材料50’覆蓋LED晶片10之上表面11及立面13，並對樹脂材料50’加熱使其固化產生體積收縮。固化後的樹脂材料50’可對應第4圖所示的發光裝置1D之單層樹脂部件50，且固化後的樹脂材料50’因發生形成發凹型結構的第一主要機制而使其底面52自LED晶片10之下表面12向上翹曲。 As shown in FIG. 9A, one or more LED wafers 10 are placed on the release material 80; then, as shown in FIG. 9B, a resin material 50' covers the upper surface 11 and the elevation 13 of the LED wafer 10, The resin material 50' is heated to solidify to cause volume shrinkage. The cured resin material 50' can correspond to the single-layer resin member 50 of the light-emitting device 1D shown in FIG. 4, and the cured resin material 50' has its bottom surface 52 from the first main mechanism for forming the concave-type structure. The lower surface 12 of the LED wafer 10 is warped upward.

如第9C圖所示，當樹脂材料50’固化後，可將離型材料80移除，然後如第9D圖所示，將相連的樹脂材料50’分離，以便得到複數個發光裝置1D’，可對應第4圖所示的發光裝置1D。 As shown in FIG. 9C, after the resin material 50' is cured, the release material 80 can be removed, and then the connected resin material 50' is separated as shown in FIG. 9D to obtain a plurality of light-emitting devices 1D', The light-emitting device 1D shown in Fig. 4 can be used.

綜合上述，本發明的發光裝置的製造方法可製造出各種具有向上翹曲底面的發光裝置，且可藉由批次方式製造大量的發光裝置。 In summary, the manufacturing method of the light-emitting device of the present invention can manufacture various light-emitting devices having an upwardly warped bottom surface, and a large number of light-emitting devices can be manufactured by batch.

上述之實施例僅用來例舉本發明之實施態樣，以及闡釋本發明之技術特徵，並非用來限制本發明之保護範疇。任何熟悉此技術者可輕易完成之改變或均等性之安排均屬於本發明所主張之範圍，本發明之權利保護範圍應以申請專利範圍為準。 The embodiments described above are only intended to illustrate the embodiments of the present invention, and to explain the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or equivalents that can be easily made by those skilled in the art are within the scope of the invention. The scope of the invention should be determined by the scope of the claims.

1A‧‧‧發光裝置 1A‧‧‧Lighting device

10‧‧‧LED晶片 10‧‧‧LED chip

11‧‧‧上表面 11‧‧‧ upper surface

12‧‧‧下表面 12‧‧‧ Lower surface

13‧‧‧立面 13‧‧‧Facade

14‧‧‧電極組 14‧‧‧Electrode group

20‧‧‧包覆結構 20‧‧‧Covered structure

21‧‧‧頂面 21‧‧‧ top surface

22‧‧‧底面 22‧‧‧ bottom

221‧‧‧邊緣 221‧‧‧ edge

23‧‧‧側面 23‧‧‧ side

30‧‧‧上層樹脂部件 30‧‧‧Upper resin parts

40‧‧‧下層樹脂部件 40‧‧‧Under resin parts

41‧‧‧頂部 41‧‧‧ top

42‧‧‧側部 42‧‧‧ side

43‧‧‧延伸部 43‧‧‧Extension

X‧‧‧水平距離 X‧‧‧ horizontal distance

Y‧‧‧垂直距離 Y‧‧‧Vertical distance

Claims (19)

一種發光裝置，包含：一LED晶片，具有一上表面、相對於該上表面之一下表面、一立面以及一電極組，該立面形成於該上表面與該下表面之間，該電極組設置於該下表面上；以及一包覆結構，覆蓋該上表面及該立面，且該包覆結構包含一頂面、相對於該頂面之一底面、及形成於該頂面與該底面之間的一側面，該頂面與該上表面相距，該底面係自該下表面向上翹曲；其中，該包覆結構包含一上層樹脂部件及一下層樹脂部件，該下層樹脂部件覆蓋該上表面及該立面，而該上層樹脂部件堆疊於該下層樹脂部件上。 A light emitting device comprising: an LED wafer having an upper surface, a lower surface opposite to the upper surface, a facade, and an electrode group formed between the upper surface and the lower surface, the electrode group And the cover structure includes a top surface, a bottom surface opposite to the top surface, and the top surface and the bottom surface a side surface between the top surface and the upper surface, the bottom surface being warped upward from the lower surface; wherein the covering structure comprises an upper resin member and a lower resin member, the lower resin member covering the upper surface The surface and the facade, and the upper resin member is stacked on the lower resin member. 如請求項1所述的發光裝置，其中，向上翹曲的該底面具有一邊緣，該邊緣與該立面相距一水平距離、且與該下表面相距一垂直距離，該垂直距離與該水平距離之比例係不小於0.022。 The illuminating device of claim 1, wherein the bottom surface of the upward warp has an edge that is at a horizontal distance from the façade and a vertical distance from the lower surface, the vertical distance and the horizontal distance The ratio is not less than 0.022. 如請求項1所述的發光裝置，其中，該頂面與該LED晶片之該上表面係相距50至1000微米。 The illuminating device of claim 1, wherein the top surface is 50 to 1000 microns apart from the upper surface of the LED wafer. 如請求項1所述的發光裝置，其中，該下層樹脂部件包含一頂部、一側部及一延伸部，該頂部覆蓋該LED晶片之該上表面，該側部覆蓋該LED晶片之該立面，而該延伸部係自該側部向外延伸。 The illuminating device of claim 1, wherein the lower resin component comprises a top portion, a side portion and an extension portion covering the upper surface of the LED chip, the side portion covering the façade of the LED chip And the extension extends outwardly from the side. 如請求項1至4任一項所述的發光裝置，其中，該下層樹脂部件為一單層或多層狀部件，該上層樹脂部件為一單層或多層狀部件。 The light-emitting device according to any one of claims 1 to 4, wherein the lower resin member is a single layer or a multilayer member, and the upper resin member is a single layer or a multilayer member. 如請求項1至4任一項所述的發光裝置，其中，該包覆結構更包含至少一螢光材料、及/或至少一光學散射性微粒。 The illuminating device of any one of claims 1 to 4, wherein the covering structure further comprises at least one fluorescent material, and/or at least one optically scattering fine particle. 如請求項1所述的發光裝置，其中，該下層樹脂部件包含一透光樹脂部件及一反射樹脂部件，該反射樹脂部件覆蓋該LED晶片之該立面，該 透光樹脂部件覆蓋該LED晶片之該上表面、且堆疊該反射樹脂部件上。 The illuminating device of claim 1, wherein the lower resin member comprises a light transmissive resin member and a reflective resin member, the reflective resin member covering the façade of the LED chip, A light transmissive resin member covers the upper surface of the LED wafer and is stacked on the reflective resin member. 如請求項1所述的發光裝置，其中，該下層樹脂部件包含一透光樹脂部件及一反射樹脂部件，該透光樹脂部件覆蓋該LED晶片之該上表面，該反射樹脂部件覆蓋該LED晶片之該立面、並覆蓋該透光樹脂部件之一側面。 The light-emitting device according to claim 1, wherein the lower resin member comprises a light-transmissive resin member covering a top surface of the LED chip, and a reflective resin member covering the LED chip The façade covers one side of the light-transmissive resin member. 一種發光裝置，包含：一LED晶片，具有一上表面、相對於該上表面之一下表面、一立面以及一電極組，該立面形成於該上表面與該下表面之間，該電極組設置於該下表面上；以及一單層樹脂部件，覆蓋該LED晶片之該上表面及該LED晶片之該立面，且該單層樹脂部件包含一頂面、相對於該頂面之一底面、及形成於該頂面與該底面之間的一側面，該頂面與該LED晶片之該上表面相距，該底面係自該LED晶片之該下表面向上翹曲；其中，該底面具有一邊緣，該邊緣與該LED晶片之該立面相距一水平距離、且與該LED晶片之該下表面相距一垂直距離，該垂直距離與該水平距離之比例係不小於0.022。 A light emitting device comprising: an LED wafer having an upper surface, a lower surface opposite to the upper surface, a facade, and an electrode group formed between the upper surface and the lower surface, the electrode group Provided on the lower surface; and a single-layer resin member covering the upper surface of the LED chip and the elevation of the LED chip, and the single-layer resin member includes a top surface opposite to a bottom surface of the top surface And a side surface formed between the top surface and the bottom surface, the top surface being spaced from the upper surface of the LED chip, the bottom surface being warped upward from the lower surface of the LED chip; wherein the bottom surface has a bottom surface An edge, the edge being at a horizontal distance from the elevation of the LED chip and a vertical distance from the lower surface of the LED chip, the ratio of the vertical distance to the horizontal distance being not less than 0.022. 如請求項9所述的發光裝置，其中，該單層樹脂部件包含一透光樹脂部件及一反射樹脂部件，該透光樹脂部件覆蓋該LED晶片之該上表面，該反射樹脂部件覆蓋該LED晶片之該立面、並覆蓋該透光樹脂部件之一側面。 The light-emitting device of claim 9, wherein the single-layer resin member comprises a light-transmissive resin member covering the upper surface of the LED chip, and a reflective resin member covering the LED The façade of the wafer covers one side of the light-transmissive resin member. 如請求項9所述的發光裝置，其中，該單層樹脂部件包含一透光樹脂部件及一反射樹脂部件，該反射樹脂部件覆蓋該LED晶片之該立面，該透光樹脂部件覆蓋該LED晶片之該上表面、並覆蓋該反射樹脂部件之一上表面。 The light-emitting device of claim 9, wherein the single-layer resin member comprises a light-transmissive resin member and a reflective resin member, the reflective resin member covering the façade of the LED chip, the light-transmissive resin member covering the LED The upper surface of the wafer covers an upper surface of the reflective resin member. 如請求項9至11其中之一所述的發光裝置，其中，該單層樹脂部件或該透光樹脂部件更包含一螢光材料、及/或一光學散射性微粒。 The light-emitting device according to any one of claims 9 to 11, wherein the single-layer resin member or the light-transmissive resin member further comprises a fluorescent material, and/or an optically scattering fine particle. 一種發光裝置的製造方法，包含：將一熱固化材料覆蓋一LED晶片之一上表面及一立面；對該熱固化材料加熱，以使該熱固化材料固化並收縮，以形成具有一向上翹曲的底面之一包覆結構。 A method for manufacturing a light-emitting device, comprising: covering a heat curing material with an upper surface and a vertical surface of an LED chip; heating the heat curing material to cure and shrink the heat curing material to form an upward tilt One of the bottom surfaces of the curved covering structure. 如請求項13所述的發光裝置的製造方法，其中，該熱固化材料係藉由噴塗、印刷、點膠或旋轉塗佈來覆蓋該LED晶片。 The method of manufacturing a light-emitting device according to claim 13, wherein the heat-curing material covers the LED wafer by spraying, printing, dispensing, or spin coating. 如請求項13或14所述的發光裝置的製造方法，其中，該熱固化材料包含一下層樹脂材料及一上層樹脂材料，該下層樹脂材料覆蓋該LED晶片之該上表面及該LED晶片之該立面、然後被加熱而固化及收縮；該上層樹脂材料堆疊於已固化的該下層樹脂材料、然後被加熱而固化及收縮。 The method of manufacturing the light-emitting device of claim 13 or 14, wherein the heat-curing material comprises a lower layer of resin material and an upper layer of resin material, the lower layer of resin material covering the upper surface of the LED chip and the LED chip The façade is then heated to solidify and shrink; the upper resin material is stacked on the cured underlying resin material and then heated to cure and shrink. 如請求項13或14所述的發光裝置的製造方法，其中，該熱固化材料包含已固化的一透光樹脂材料、一上層樹脂材料及一反射樹脂材料，已固化的該透光樹脂材料放置於該LED晶片之該上表面；該反射樹脂材料覆蓋該LED晶片之該立面及已固化的該透光樹脂材料的一側面，然後被加熱而固化及收縮；該上層樹脂材料堆疊於已固化的該螢光樹脂材料及該反射樹脂材料上、然後被加熱而固化及收縮。 The method of manufacturing a light-emitting device according to claim 13 or 14, wherein the heat-curable material comprises a cured light-transmissive resin material, an upper resin material, and a reflective resin material, and the cured light-transmitting resin material is placed. On the upper surface of the LED chip; the reflective resin material covers the façade of the LED chip and a side of the cured light-transmissive resin material, and then heated to cure and shrink; the upper resin material is stacked on the cured The fluorescent resin material and the reflective resin material are then heated to cure and shrink. 如請求項13或14所述的發光裝置的製造方法，其中，該熱固化材料包含一樹脂材料，該樹脂材料覆蓋該LED晶片之該上表面及該LED晶片之該立面、然後被加熱而固化及收縮，以形成該單層樹脂部件。 The method of manufacturing a light-emitting device according to claim 13 or 14, wherein the thermosetting material comprises a resin material covering the upper surface of the LED chip and the elevation of the LED wafer, and then heated Curing and shrinking to form the single layer resin part. 如請求項13或14所述的發光裝置的製造方法，其中，該熱固化材料包含一透光樹脂材料及一反射樹脂材料，該反射樹脂材料覆蓋該立面，然後被加熱而固化及收縮；該透光樹脂材料覆蓋該上表面且堆疊於已固化的該反射樹脂材料上、然後被加熱而固化及收縮。 The method of manufacturing a light-emitting device according to claim 13 or 14, wherein the heat-curable material comprises a light-transmissive resin material and a reflective resin material, the reflective resin material covers the façade, and then heated to solidify and shrink; The light-transmissive resin material covers the upper surface and is stacked on the cured reflective resin material, and then heated to be cured and shrunk. 如請求項13或14所述的發光裝置的製造方法，其中，該熱固化材料包含已固化的一透光樹脂材料及一反射樹脂材料，已固化的該透光樹脂材 料放置於該LED晶片之該上表面；該反射樹脂材料覆蓋該LED晶片之該立面及已固化的該透光樹脂材料的一側面，然後被加熱而固化及收縮。 The method of manufacturing a light-emitting device according to claim 13 or 14, wherein the heat-curable material comprises a cured light-transmissive resin material and a reflective resin material, and the light-transmissive resin material is cured. The material is placed on the upper surface of the LED chip; the reflective resin material covers the façade of the LED chip and a side of the cured light-transmissive resin material, and then heated to cure and shrink.
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