CN106981554B - Have the wafer-level package light emitting device and its manufacturing method of spill design - Google Patents
Have the wafer-level package light emitting device and its manufacturing method of spill design Download PDFInfo
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- CN106981554B CN106981554B CN201610033392.0A CN201610033392A CN106981554B CN 106981554 B CN106981554 B CN 106981554B CN 201610033392 A CN201610033392 A CN 201610033392A CN 106981554 B CN106981554 B CN 106981554B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The present invention proposes the wafer-level package light emitting device and its manufacturing method of a tool spill design.The wafer-level package light emitting device includes a crystal covering type LED chip and a clad structure.Clad structure is covered in LED chip, and its bottom surface it is upturned and formed a spill.The present invention separately proposes the manufacturing method of a light emitting device, can manufacture above-mentioned light emitting device.Whereby, it can avoid or improve in the techniques such as reflow soldering or eutectic bonding, make to generate biggish gap between the electrode group of LED chip and the weld pad of substrate and cause the welded contact quality between light emitting device and substrate bad because of clad structure expanded by heating, therefore electrode group can be made really affixed with substrate.By good welds quality, it can avoid light emitting device electrical connection failure, can also drop the thermal resistance between light emitting device and substrate, junction temperature when operating light emitting device reduces, and then improves luminous efficiency and reliability performance.
Description
Technical field
The present invention is especially closed in relation to a kind of light emitting device (light emitting device, LED) and its manufacturing method
In wafer-level package (chip scale packaging, the CSP) light emitting device and its manufacturing method of a kind of tool spill design.
Background technique
LED (light emitting device) is generally to be utilized to provide lighting source or be configured at electronics to produce
Display light source or indicator light are used as in product, and LED chip would generally be placed in a support rack type or ceramic substrate type encapsulating structure, and
It is coated or is covered by a fluorescent material, to become a light emitting device (LED).The light emitting device can pass through reflow soldering (reflow
Soldering) or the techniques such as eutectic bonding (eutectic bonding), light emitting device is solidly connected to the other structures such as substrate
On, electric energy can be transmitted by substrate whereby, to drive light emitting device to shine.
With the evolution of LED technology, wafer-level package (chip scale packaging, CSP) light emitting device (LED) with
Its apparent advantage is in starting in recent years by vast attention.Since CSP LED is only by a LED chip and a cladding LED chip
Encapsulating structure (generally comprising a fluorescent material) formed, compared to conventional stent type LED and ceramic substrate type LED, CSP
LED has the advantage that (1) does not need gold thread and additional bracket or ceramic substrate, therefore can obviously save material cost;
(2) because bracket or ceramic substrate is omitted, the thermal resistance between LED chip and heat sink can be further decreased, therefore in identical behaviour
There to be lower operation temperature under the conditions of work, or increase operation power in turn;(3) lower operation temperature can be such that LED has
Higher chip conversion quantum efficiency;(4) package dimension substantially reduced to have bigger when designing mould group or lamps and lanterns
Design flexibility;(5) there is small light-emitting area, therefore etendue (Etendue) can be reduced, so that secondary optics are easier to design,
Or obtain high luminous intensity (intensity) whereby.
Since CSP LED does not need gold thread and additional bracket or ceramic substrate, above needed directly and substrate in application
Engagement.However, the encapsulating structure that existing CSP LED in the techniques such as reflow soldering or eutectic bonding, coats LED chip can be because
It is heated and expands;The encapsulating structure of expansion will contact and push the substrate being disposed below, and in turn result in the electrode and substrate of LED
Weld pad generate biggish gap.Such case will lead to LED and can not be suitably welded on substrate, thus cause to be electrically connected
Failure or welding quality are bad, and the latter but will cause higher resistance and thermal resistance, make that LED energy consumption is higher and heat dissipation is poor, lead
Whole efficiency decline is caused, reliability decline is in turn resulted in.
To improve the above problem, a kind of possible mode is that a thicker golden tin projection is added below the electrode of LED
Carry out padded light emitting device, so that the clad structure of expanded by heating is not touched substrate in welding process, but add the gold tin projection
Material cost will be obviously increased and reduce manufacturing yield because welding contraposition.
It is the manufacture that industry is successfully established the CSP LED to accord with the demands of the market in view of this, how to improve above-mentioned missing
Technology problem to be solved.
Summary of the invention
A purpose of the present invention is that providing a kind of luminous dress of wafer-level package (chip-scale packaging, CSP)
(light emitting device, LED) and its manufacturing method are set, can be made between light emitting device and substrate or other structures
Engagement it is more reliable.
In order to achieve the above object, disclosed herein a kind of light emitting device include: a LED chip and a clad structure.It should
LED chip is a crystal covering type LED chip, and there is a upper surface, a lower surface, a facade and an electrode group, facade to be formed in
Between upper surface and lower surface, electrode group is set on the lower surface of LED chip;Clad structure is covered in the upper table of LED chip
Face and facade, and clad structure includes a top surface, the bottom surface relative to top surface and the side that is formed between top surface and bottom surface
Apart, bottom surface is upturned from lower surface for face, top surface and upper surface;Wherein, clad structure includes a upper layer resin component and one
Lower-layer resin component, lower-layer resin component is covered in upper surface and the facade of LED chip, and upper layer resin component is stacked in lower layer
On resin component, and the bottom surface of clad structure has dented space.
In order to achieve the above object, disclosed herein another light emitting device include: a LED chip and a single-layer resin portion
Part.The LED chip is a crystal covering type LED chip, has a upper surface, a lower surface, a facade and an electrode group, facade shape
At between upper surface and lower surface, electrode group is set on the lower surface of LED chip, and single-layer resin component is covered in LED core
The upper surface of piece and facade, and single-layer resin component include a top surface, relative to top surface a bottom surface and be formed in top surface and bottom
Apart, the lower surface of bottom surface from the LED chip is upturned for the upper surface of one side between face, top surface and LED chip;Its
In, the bottom surface of single-layer resin component has a dented space, and bottom surface has an edge, and the facade of edge and LED chip is at a distance of a water
Flat distance and with the lower surface of LED chip at a distance of a vertical range, the ratio of vertical range and horizontal distance is not less than 0.022.
In order to achieve the above object, disclosed herein a kind of light emitting device manufacturing method, include: by a heat reactive resin
Material covers upper surface and the facade of a crystal covering type LED chip;Thermosetting material is heated, it is made to solidify and shrink, to be formed
Clad structure with a upturned bottom surface.
Whereby, light emitting device of the invention and its manufacturing method can at least provide below the utility model has the advantages that light emitting device
Clad structure (resin component) after heat cure have upturned recess bottom surface, when light emitting device be set to substrate (or its
His structure) heating process such as reflow soldering (reflow soldering) or eutectic bonding (eutectic bonding) are carried out afterwards
When, although clad structure understands expanded by heating and deforms its bottom surface downwards, the dented space of the bottom surface can accommodate clad structure
Downward swell increment after heated, therefore the gap that the bottom surface not will cause LED chip electrode and substrate weld pad is excessive and generate solder
Poor contact.Therefore, the electrode group of light emitting device of tool spill design can certainly be connected via solder with substrate, avoid in
It causes to be electrically connected failure between light emitting device and substrate in the techniques such as reflow soldering or eutectic bonding or welding quality is bad;Phase
Compared with the light emitting device that no spill designs, disclosed herein light emitting device can still be designed by spill and be obviously improved welding
Failure or the bad disadvantage of welding quality.
In addition, good welding quality can reduce the thermal resistance between light emitting device and substrate, make light emitting device when operation
With lower junction temperature (junction temperature), the reliability performance of light emitting device can be improved whereby, in addition,
Lower junction temperature can make LED chip conversion quantum efficiency with higher (quantum efficiency);Furthermore it is good
Good welding quality can also improve the Ohmic contact (ohmic contact) between light emitting device and substrate, have light emitting device
Lower forward voltage can reduce whole power loss and obtain higher luminous efficiency (efficacy).
For above-mentioned purpose, technical characteristic and advantage can be clearer and more comprehensible, be hereafter cooperated with preferred embodiment appended by
Schema is described in detail.
Detailed description of the invention
Figure 1A to Fig. 1 D is the schematic diagram of the light emitting device of the first preferred embodiment according to the present invention.
Fig. 1 E is the schematic diagram of existing light emitting device expanded by heating.
Fig. 1 F is the schematic diagram of the light emitting device expanded by heating of the first preferred embodiment according to the present invention.
Fig. 2 is the schematic diagram of the light emitting device of the second preferred embodiment according to the present invention.
Fig. 3 is the schematic diagram of the light emitting device of third preferred embodiment according to the present invention.
Fig. 4 is the schematic diagram of the light emitting device of the 4th preferred embodiment according to the present invention.
Fig. 5 is the schematic diagram of the light emitting device of the 5th preferred embodiment according to the present invention.
Fig. 6 is the schematic diagram of the light emitting device of the 6th preferred embodiment according to the present invention.
The step of Fig. 7 A to Fig. 7 E is the first preferred embodiment of the manufacturing method of light emitting device according to the present invention is illustrated
Figure.
The step of Fig. 8 A to Fig. 8 F is the second preferred embodiment of the manufacturing method of light emitting device according to the present invention is illustrated
Figure.
The step of Fig. 9 A to Fig. 9 D is the third preferred embodiment of the manufacturing method of light emitting device according to the present invention is illustrated
Figure.
Drawing reference numeral
1A, 1A ', 1B, 1C, 1C ', 1D, 1D ', 1E, 1F light emitting device
10 LED chips
11 upper surfaces
12 lower surfaces
13 facades
14 electrode groups
20 clad structures
20 ' clad structures
21 top surfaces
22 bottom surfaces
221 edges
23 sides
30 upper layer resin components
30 ' upper layer resin materials
40 lower-layer resin components
40 ' lower-layer resin materials
41 tops
42 sides
43 extensions
44 light-transmissive resin components
44 ' light-transmissive resin materials
441 sides
441 ' sides
442 top surfaces
45 reflection resin components
45 ' reflection resin materials
451 top surfaces
50 single-layer resin components
50 ' resin materials
51 top surfaces
52 bottom surfaces
521 edges
53 sides
60 light-transmissive resin components
61 sides
62 top surfaces
70 reflection resin components
71 upper surfaces
80 separated type materials
X horizontal distance
Y vertical range
Specific embodiment
It please refers to shown in Figure 1A, for the light emitting device (light of the first preferred embodiment according to the present invention
Emitting device, LED) schematic diagram (cross-sectional view).Light emitting device 1A may include a LED chip 10 and a cladding knot
Structure 20, and the technology contents of those elements will be sequentially described as follows.
The LED chip 10 is a crystal covering type LED chip, and can have a upper surface 11, a lower surface 12, one vertical in appearance
Face 13 and an electrode group 14.The upper surface 11 is opposite with lower surface 12 and is arranged on the contrary, and facade 13 is formed in upper surface
Between 11 and lower surface 12, and connect upper surface 11 and lower surface 12.Electrode group 14 is set on lower surface 12, and can have two
A above electrode.Electric energy (not shown) can be supplied in LED chip 10 by electrode group 14, and LED chip 10 is then made to shine.
Luminescent layer due to can produce light is usually located at the lower section inside crystal covering type LED chip 10, the light as caused by luminescent layer
The upper surface 11 of crystal covering type LED chip 10 and facade 13 can be penetrated and transmitted outward, therefore, crystal covering type LED chip 10 has five
The characteristic that there are five faces to shine for the luminous characteristic in face, i.e. LED chip 10.
Clad structure 20 can protect LED chip 10 and can preferably change the wavelength for the light that LED chip 10 is emitted, and
Clad structure 20 can have a top surface 21, a bottom surface 22 and one side 23 in appearance;Top surface 21 is opposite and opposite with bottom surface 22
Setting, and side 23 is formed between top surface 21 and bottom surface 22, and side 23 is also connected with top surface 21 and bottom surface 22.In other words, should
Side 23 is the profile (edge) along top surface 21 and bottom surface 22 and is formed, therefore the side 23 is relative to top surface 21 and bottom surface 22
Cyclic annular (such as straight-flanked ring).
Clad structure is set in LED chip 10 on 20 position, and covers upper surface 11 and the facade 13 of LED chip 10,
So that clad structure 20 can protect LED chip 10, make its upper surface 11 and facade 13 less likely directly touch environment object and
It is polluted or is damaged.In this way, the top surface 21 of clad structure 20 and the meeting of the upper surface 11 of LED chip 10 are apart, and clad structure
It 20 side 23 also can be with the facade 13 of LED chip 10 apart.Preferably, in the upper surface of LED chip 10 11 and clad structure
It include a fluorescent material between 20 top surface 21, the blue light for issuing LED chip 10 via upper surface 11 can be via phosphor
Expect partly Wavelength-converting;Preferably, including a fluorescence between the facade 13 of LED chip 10 and the side 23 of clad structure 20
Material, the blue light for issuing LED chip 10 via facade 13 can via fluorescent material section Wavelength-convertings.Preferably, packet
The lower surface 12 of LED chip 10 will not be covered by covering structure 20, so that electrode group 14 can more suitably expose.
It may include a upper layer resin component 30 and lower layer's resin component 40 in 20 structure of clad structure, and upper layer resin portion
Part 30 is formed on lower-layer resin component 40, or can be said, upper layer resin component 30 is stacked on lower-layer resin component 40.Under
Layer resin component 40 covers upper surface 11 and the facade 13 of LED chip 10, and upper layer resin component 30 will not touch LED chip
10.The top surface of upper layer resin component 30 is the top surface 21 of clad structure 20, and the bottom surface of lower-layer resin component 40 is clad structure
20 bottom surface 22, and the side of upper layer resin component 30 and the side of lower-layer resin component 40 are the side of clad structure 20 jointly
23.Upper layer resin component 30 and lower-layer resin component 40 can all allow light to pass through, and the two is all selectively included at least one
Fluorescent material and/or optical scattering particle (such as titanium dioxide, TiO2), such as upper layer resin component 30 do not included by selection
Fluorescent material or optical scattering particle, and lower-layer resin component 40 is selected only comprising fluorescent material.
In this way, when the light that LED chip 10 is issued passes through lower-layer resin component 40, positioned at the upper surface of LED chip 10
11 with the fluorescent material of facade 13 can partly blue light caused by conversion LED chip 10 wavelength, whereby, upper surface 11 and vertical
The light of different wave length caused by face 13 can mix in appropriate proportions and be formed the light of required color, such as different-colour
White light;But when passing through upper layer resin component 30, the wavelength of light is without apparent variation.
Upper layer resin component 30 and lower-layer resin component 40 are by institute former after resin material heat cure.Resin material
Can cause the contraction of its volume because of two mechanism during heat cure: one is that volume caused by chemical reaction is received
Contracting, another is the physical phenomenon of cold shrinkage and thermal expansion caused by temperature change.Molecule cross-link in resin material solidification process
(cross-link) behavior is chemical reaction, will lead to the contraction in resin material generation volume, and this chemical reaction is made
At volume contraction be disposable shrink;And the cold shrinkage and thermal expansion of resin material is physical characteristic, from heat curing temperature (such as
150 DEG C) it drops in the cooling procedure of room temperature, resin material can cause the contraction in volume because of the decline of temperature.
Wherein, if having in resin material doping other materials, it will change resin material entirety thermal expansion coefficient and
The change of volume shrinkage mass is caused, if the inorganic material (such as fluorescent material) of relatively low thermel expansion coefficient is added, resin can be reduced
The whole thermal expansion coefficient of material, conversely, then will increase its whole thermal expansion coefficient.The upper layer resin component 30 of the present embodiment with
Each of lower-layer resin component 40 is selectively included a fluorescent material or optical scattering particle, and fluorescent material or light
Learning scattering particle is usually inorganic material, therefore, be added fluorescent material or optical scattering particle upper layer resin component 30 or
Lower-layer resin component 40 would generally have lower whole thermal expansion coefficient compared with pure resin component.
The spill (recess) of light emitting device 1A be by formed disclosed herein light emitting device 1A manufacturing process
In, the physics via material cold shrinkage and thermal expansion caused by volume contraction and temperature change caused by above-mentioned materials chemistry reaction is existing
As two main mechanisms are formed, sequentially explanation is as after.
Disclosed herein light emitting device 1A there are two main manufacturing steps, as shown in Figure 1B, will in first step
40 heat cure of lower-layer resin component is to be formed in LED chip 10, then, as shown in Figure 1 C, in second step, by upper layer tree
Rouge component 30 is formed on lower-layer resin component 40, is then heating and curing.
Formed disclosed herein light emitting device 1A manufacturing process in, as shown in Figure 1B, in first step, under
Layer resin component 40, which is first thermally cured, to be formed in LED chip 10, and lower-layer resin component 40 can generate in solidification process at this time
Disposable volume contraction caused by chemical reaction, by taking silica column (silicone) as an example, common curing reaction institute
Caused by cubical contraction be about 6% (its linear shrinkage ratio is about 2%);Also, LED chip 10 belongs to inorganic material, thermal expansion system
About 6.5ppm/ DEG C of number, much smaller than the material thermal expansion coefficient for forming lower-layer resin component 40, about 200ppm/ DEG C.Therefore,
Light emitting device 1A is in the heat cure reaction of lower-layer resin component 40 and thereafter from solidification temperature (about 150 DEG C) to room temperature (about 25
DEG C) temperature-fall period in, volume shrinkage mass can be much larger than LED chip 10 volume shrinkage mass.Due to LED chip 10 and lower layer
The difference of the apparent shrinkage of resin component 40 can make the biggish lower-layer resin component 40 of inside shrinkage pull inside shrinkage
It when lesser LED chip 10, causes 40 deformation of lower-layer resin component and keeps bottom surface upturned, form a concave structure, this is
Make dished first main mechanism of the bottom light emitting device 1A shape.
Furthermore formed disclosed herein light emitting device 1A manufacturing process in, as shown in Figure 1 C, in second step
In, upper layer resin component 30 is formed on lower-layer resin component 40, is then heating and curing;Upper layer resin component 30 can generation
Disposable volume contraction caused by reaction is learned, but cured lower-layer resin component 40 will not generate chemical reaction institute at this time
Caused by disposable volume contraction;Herein under effect, upper layer resin component 30 will generate and be significantly greater than lower-layer resin component
40 volume shrinkage mass, thus stress will be formed between lower-layer resin component 40 and upper layer resin component 30 and cause lower-layer resin
Component 40 is upturned, i.e., so-called doubling plate effect (bimorph effect), as shown in figure iD, this doubling plate effect causes
The bottom surface of lower-layer resin component 40 is upturned (from the dotted line person person that becomes solid line), that is, the bottom surface 22 of clad structure 20 is from LED core
The lower surface 12 of piece 10 is upturned (i.e. since lower surface 12, bottom surface 22 gradually can be up bent), and forms a spill.
This is to make dished second main mechanism of the bottom light emitting device 1A shape.
Also, preferably, lower-layer resin component 40 further includes an inorganic fluorescent material, due to the thermal expansion coefficient of fluorescent material
Lower than resin material, therefore will cause lower-layer resin component 40 has lower whole thermal expansion coefficient;Preferably, upper layer resin portion
Part 30 does not include fluorescent material, therefore its whole thermal expansion coefficient is higher than the whole thermal expansion coefficient of lower-layer resin component 40.Therefore,
Formed disclosed herein light emitting device 1A manufacturing process in, upper layer resin component 30 is cooled to by heat curing temperature
During room temperature, volume shrinkage mass is caused to be greater than the volume of lower-layer resin component 40 because of its thermal expansion coefficient with higher
Shrinkage;Under the effect of this cooling meat, upper layer resin component 30 is significantly greater than the volume of lower-layer resin component 40 by generating
Shrinkage, thus the stress that is formed between lower-layer resin component 40 and upper layer resin component 30 and cause another doubling plate effect
(bimorph effect), this effect form bigger spill in turn.This is to make the dished third of the bottom light emitting device 1A shape
Main mechanism.
It need to remark additionally, aforementioned three main mechanisms will also result in the top surface (clad structure of upper layer resin component 30
20 top surface 21) (it is recessed to lower recess to the upper surface of LED chip 10 11), or cause the top surface of upper layer resin component 30
Partial region is to lower recess.
Whereby, the bottom surface 22 of clad structure 20 is upturned person, therefore the lower section of the bottom surface 22 can provide a spill
(recess) space.When light emitting device 1A passes through reflow soldering (reflow soldering) or eutectic bonding (eutectic
) etc. bonding when modes are connected to the structures (not shown) such as substrate, although clad structure 20 can expanded by heating and lead to bottom surface 22
Downward deformation, but concave shaped space provided by bottom surface 22 can accommodate clad structure 20 it is heated after downward deformation quantity, therefore bottom surface 22
LED chip electrode group 14 will not be arched upward and cause the gap of electrode group 14 and substrate weld pad (not shown) excessive and cause solder
Poor contact;Therefore, the electrode group 14 of the light emitting device 1A of tool spill design can certainly be connected via solder with substrate.
On the other hand, in the heating processes such as reflow soldering or eutectic bonding, due to light emitting device 1A tool spill design, make
Good contact gap can be kept between the electrode group 14 and substrate weld pad of LED chip 10, so can avoid between electrode group 14
Solder (not shown) between substrate weld pad makes solder that can keep the consistency of its thickness and integral material by force-extension,
Therefore, the defects of inside of solder will not generate emptying aperture or material discontinuity due to by force-extension, and welding is caused to contact
It is bad, and then lead to the decline of pyroconductivity.Also, a large amount of thermal energy can be generated when light emitting device 1A is when lighting running, therefore,
When light emitting device 1A and substrate have good welds contact, thermal resistance between the electrode group 14 and substrate of light emitting device 1A can be compared with
It is low, so that generated heat can more quickly be conducted to substrate when the running of LED chip 10 of light emitting device 1A.Whereby, shine dress
Lower junction temperature (junction temperature) can be had in running by setting 1A, can promote light emitting device 1A amount
Sub- transfer efficiency (quantum efficiency), and the reliability and service life of light emitting device 1A can be increased.
In addition, good welding quality can also improve the Ohmic contact between the electrode group 14 of LED chip 10 and substrate weld pad
(ohmic contact), forward voltage needed for LED chip 10 can be reduced, and then the power loss of light emitting device is reduced, so
It can get higher luminous efficiency (efficacy).
It can be seen from the above, the available feature of spill of 22 lower section of bottom surface of light emitting device 1A is at least: making light emitting device
There is good welding quality between 1A and substrate, and then make light emitting device 1A that can possess more preferably reliability and luminous efficiency
Deng.
Fig. 1 E show a numerical simulation example, this is the existing nothing of industry " light emitting device of spill design " in Reflow Soldering
Connect the sunykatuib analysis result under the hot environment (about 250 DEG C) of technique, wherein the length of clad structure 20 is 1500 microns, thick
Degree is 600 microns (lower-layer resin components 40 with a thickness of 80 microns), and the length of LED chip 10 is 850 microns, with a thickness of 150
Micron;When light emitting device bears high temperature in solder reflow process, it will lead to the volume expansion of its all parts and make shape
Generate deformation, wherein the deformation quantity of clad structure 20 is much larger than the deformation quantity of LED chip 10, the analogue example shown in Fig. 1 E
Under, light emitting device shape as shown by dotted line at 25 DEG C of room temperature is expanded into shape shown by solid line at 250 DEG C, each portion
The volume expansion of part results in the horizontal position that the bottom surface 22 of clad structure 20 is flushed by script with the lower surface 12 of LED chip 10
Downward 20.2 microns of deformation, this deformation quantity are arched upward the electrode group 14 for making light emitting device, this will lead to electrode group 14 and substrate
Contact gap between weld pad is excessive, makes the light emitting device of no spill design that can not obtain good welding quality.
As shown in fig. 1F be another numerical simulation example, this be disclosed herein tool spill design light emitting device 1A
Sunykatuib analysis result under the hot environment (about 250 DEG C) of solder reflow process, wherein numerical simulation setting condition is identical to
Numerical simulation example shown in Fig. 1 E;At 25 DEG C of room temperature, the bottom surface of the clad structure 20 of the light emitting device 1A of tool spill design
22 upturned amount is 20.9 microns (concave shaped space), and in solder reflow process, light emitting device 1A is by empty at 25 DEG C of room temperature
Shape shown by line is expanded into shape shown by solid line at 250 DEG C, at this time the downward deformation in bottom surface 22 of clad structure 20
19.5 microns, downward swell increment is less than space (i.e. 20.9 microns) provided by concave structure, and therefore, bottom surface 22 will not make
LED chip electrode group 14 is arched upward, and causes electrode group 14 and the contact gap of substrate weld pad excessive, can so make light emitting device
1A obtains good welding and contacts quality.
In addition, the solder bonding area between the electrode group 14 and substrate weld pad of LED chip 10 can mainly reflect weldering
Contact quality, solder bonding area is bigger, indicates that welding quality is better, can make to have between light emitting device 1A and substrate lower
Thermal resistance, therefore thermal energy can effectively by substrate conduct, will not because thermal energy accumulate due to keep light emitting device 1A temperature excessively high.One
It tests under example, as shown in the table, when solder bonding area is less than the 70% of electrode area (test condition one), represents poor
Welding contact quality, in the temperature that the upper surface of light emitting device measures greater than 110 DEG C;When solder bonding area is greater than electricity
Pole-face product 95% when (test condition three), the upper surface temperature measured less than 105 DEG C, have preferably radiate imitate
Fruit;And under the same test conditions, disclosed herein the design of tool spill the upper surface 21 that measures light emitting device 1A
Temperature be 103 DEG C, the more below upper surface temperature of test condition three (solder bonding area be greater than 95%), this result illustrates
Spill design of the invention can be obviously improved welding quality, and then reduce thermal resistance and operation temperature.
The comparison sheet of the light emitting device upper surface temperature measured under different solder bonding areas
Project | Solder bonding area | Upper surface temperature |
Test condition one | < 70% | >110℃ |
Test condition two | 70%~95% | 105 DEG C~110 DEG C |
Test condition three | > 95% | <105℃ |
Has the light emitting device of spill design | > 98% | 103℃ |
The bottom surface 22 of light emitting device 1A must reach certain upturned amount, preferably, the upturned amount of bottom surface 22 accords with
Close following definitions: the bottom surface 22 of warpage has an edge 221, and the edge 221 and the facade 13 of LED chip 10 are horizontal at a distance of one
The lower surface 12 (or minimum point of bottom surface 22) of distance X and LED chip 10 is at a distance of a vertical range Y, vertical range Y and level
The ratio (i.e. Y/X) of distance X is not less than 0.022.
In addition, the size of clad structure 20 influences whether the upturned amount of its bottom surface 22.When the level of clad structure 20
When size (width or length) is bigger, after 20 heat cure of clad structure, the upturned amount (i.e. vertical range Y) of bottom surface 22 is also got over
Greatly.When the vertical dimension (thickness) of clad structure 20 increases, after 20 heat cure of clad structure, the upturned amount of bottom surface 22
(i.e. vertical range Y) also will increase.
However, the increase of the upturned amount of bottom surface 22 will be unknown after the thickness of clad structure 20 increases to a certain degree
It is aobvious, this is because the contraction now close to the clad structure 20 of upper end will increasingly be not easy to influence the warpage of bottom surface 22.Therefore
Preferably, the top surface 21 of clad structure 20 and the upper surface 11 of LED chip 10 are at a distance of 50 microns to 1000 microns, it is preferable to obtain
Overall efficiency.
Supplementary explanation, in the present embodiment, upper layer resin component 30 and lower-layer resin component 40 can all allow light logical
Cross, and the two be all selectively included an at least fluorescent material and/or optical scattering particle (such as titanium dioxide,
TiO2), such as upper layer resin component 30 is selected not comprising fluorescent material or optical scattering particle, and lower-layer resin component 40
It is selected only comprising fluorescent material.In this way, the light of LED chip 10 when lower-layer resin component 40 by fluorescent material by that can be acted on
And change its wavelength, but when passing through upper layer resin component 30 wavelength without significantly changing.In addition, upper layer resin component 30 and lower layer
Each of resin component 40 can be set to a stage-layer unit and (as shown in Figure 1A to Fig. 1 F, solidify primary institute by resin material
Former) or multi-layer part (not shown, to solidify institute former through gradation by identical or different resin material).
Furthermore lower-layer resin component 40 can be construction profile (but not limited to this) discussed below: lower-layer resin portion
Part 40 includes that 41, one side 42 of top and an extension 43, three can be integrally formed;Top 41 covers LED chip 10
Upper surface 11, side 42 covers the facade 13 of LED chip 10, and extension 43 is extended outwardly from side 42 (i.e. towards remote
Direction from facade 13 extends);Side 42 and extension 43 are all annular in shape, surround the LED chip 10.
The explanation of the technology contents of light emitting device 1A above, then by explanation according to the present invention other embodiments shine
The technology contents of device, and the technology contents of the light emitting device of each embodiment can should refer to mutually, therefore identical part will omit
Or simplify.
It please refers to shown in Fig. 2, for the schematic diagram of the light emitting device of the second preferred embodiment according to the present invention.Shine dress
Set 1B and aforementioned light emitting device 1A do not exist together at least that, the lower-layer resin component 40 of light emitting device 1B includes a light-transmissive resin portion
Part 44 and a reflection resin component 45.Reflection resin component 45 is covered in the facade 13 of LED chip 10, but does not cover upper surface
11;Light-transmissive resin component 44 covers the upper surface 11 of LED chip 10 simultaneously and reflects the top surface 451 of resin component 45.Wherein, instead
The bottom surface for penetrating resin component 45 is the bottom surface 22 of clad structure 20, upturned from the lower surface of LED chip 10 12.
Since reflection resin component 45 covers facade 13, the light that LED chip 10 is emitted will only can be via light transmission
Resin component 44 and upper layer resin component 30 transmit, and can reduce the light that LED chip 10 is emitted and project from facade 13, so that hair
The light emitting region of electro-optical device 1B is more concentrated.
It please refers to shown in Fig. 3, for the schematic diagram of the light emitting device of third preferred embodiment according to the present invention.Shine dress
Set 1C and aforementioned light emitting device 1B do not exist together at least that, in the lower-layer resin component 40 of light emitting device 1C, light-transmissive resin component
44 covering upper surfaces 11, and reflect resin component 45 while covering the facade 13 of LED chip 10 and the side of light-transmissive resin component 44
Face 441.In this way, reflection resin component 45 light that LED chip 10 can be further prevented to be launched is from light-transmissive resin component 44
Side 441 project, the light emitting region of light emitting device 1C can be made more to concentrate.
It please refers to shown in Fig. 4, for the schematic diagram of the light emitting device of the 4th preferred embodiment according to the present invention.This shines
Device 1D may include LED chip 10 and a single-layer resin component 50, wherein the LED chip of LED chip 10 and previous embodiment 1A
10 is identical, and single-layer resin component 50 is similar to the clad structure 20 of aforementioned first preferred embodiment, only single-layer resin component 50
Only there is simple layer resin on vertical direction (thickness direction), and clad structure 20 has at least two layers of resin (i.e. upper layer tree
Rouge component 30 and lower-layer resin component 40).
Single-layer resin component 50 can have a top surface 51, a bottom surface 52 and one side 53 in appearance;Top surface 51 and bottom surface 52
It is opposite and be reversed, and side 53 is formed between top surface 51 and bottom surface 52, and side 53 is also connected with top surface 51 and bottom surface
52, which is the profile along top surface 51 with bottom surface 52 and is formed, therefore the side 53 is relative to top surface 51 and bottom surface 52
Cyclic annular (such as straight-flanked ring).
Single-layer resin component is set in LED chip 10 on 50 position, and covers upper surface 11 and the facade of LED chip 10
13, so that single-layer resin component 50 can protect LED chip 10, its upper surface 11 and facade 13 is made less likely directly to touch ring
Border object and polluted or damaged.In this way, the top surface 51 of single-layer resin component 50 and the meeting of the upper surface 11 of LED chip 10 are apart,
And the side 53 of single-layer resin component 50 also can be with the facade 13 of LED chip 10 apart.
Preferably, including a phosphor between the upper surface of LED chip 10 11 and the top surface of single-layer resin component 50 51
Material, the blue light for issuing LED chip 10 via upper surface 11 can via fluorescent material section Wavelength-convertings;Preferably, in
Include a fluorescent material between the facade 13 of LED chip 10 and the side 53 of single-layer resin component 50, makes LED chip 10 via vertical
The blue light that face 13 is issued can via fluorescent material section Wavelength-converting;Whereby, caused by upper surface 11 and facade 13
The light of different wave length can mix in appropriate proportions and be formed the light of required color, such as the white light of different-colour.Preferably,
Single-layer resin component 50 will not cover the lower surface 12 of LED chip 10, so that electrode group 14 can more suitably expose.
Single-layer resin component 50 is also via heat cure institute former, therefore single-layer resin component 50 is in curing process
Disposable volume contraction caused by chemical reaction can be generated;Also, LED chip 10 belongs to inorganic material, thermal expansion coefficient is remote
Less than the material thermal expansion coefficient for forming single-layer resin component 50, therefore, room is down to from heat curing temperature after completing heat cure
In the cooling procedure of temperature, single-layer resin component 50 also can be significantly greater than LED chip 10 because the physical phenomenon of cold shrinkage and thermal expansion generates
Volume shrinkage mass.
Therefore, light emitting device 1D single-layer resin component 50 heat cure reaction with and subsequent temperature-fall period in, body
Product shrinkage can be much larger than the volume shrinkage mass of LED chip 10, this phenomenon can make to pull to the single-layer resin component 50 of contract
Its bottom surface 52 up warpage and form a concave structure (this forms the first main mechanism of the spill of light emitting device 1A), i.e. bottom
Face 52 is gradually up bent from the lower surface of LED chip 10 12 (or minimum point from bottom surface 52).Meanwhile resin material is interior
Contracting can also make the top surface 51 of single-layer resin component 50 (be recessed to lower recess to the upper surface of LED chip 10 11), or make single layer
The partial region of the top surface 51 of resin component 50 is to lower recess.
Preferably, the upturned amount of the bottom surface 52 is defined as: the bottom surface 52 of warpage has an edge 521, the edge
521 with the facade 13 of LED chip 10 at a distance of a horizontal distance X, with the lower surface 12 (or minimum point of bottom surface 52) of LED chip 10
Ratio (i.e. Y/X) at a distance of a vertical range Y, vertical range Y and horizontal distance X is not less than 0.022.
(numerical simulation, which imposes a condition, is homogeneously same as the clad structure 20 of the first preferred embodiment under a numerical simulation example
With the corresponding person of LED chip 10), the light emitting device 1D of tool spill design is when 25 DEG C of room temperature, the bottom surface of single-layer resin component 50
52 upturned amount (i.e. concave shaped space) is 17.8 microns.In 250 DEG C of reflow soldering of process environments, single-layer resin component
Its 52 17.0 microns of downward deformation of bottom surface after 50 expanded by heating, downward swell increment are less than concave shaped space.It follows that the dress that shines
It sets 1D to be placed on substrate when carrying out the heating processes such as reflow soldering, bottom surface 52 also will not make LED chip because of expanded by heating
Electrode group 14 and the contact gap of substrate weld pad are excessive, therefore light emitting device 1D can be made to obtain good welding quality.
It is similar to the first preferred embodiment, after the thickness of single-layer resin component 50 increases to a certain degree, bottom surface 52 to
The increase of upper amount of warpage will be unobvious, therefore, it is preferable that the upper surface 11 of the top surface 51 of single-layer resin component 50 and LED chip 10
At a distance of 50 microns to 1000 microns, to obtain preferable overall efficiency.
It please refers to shown in Fig. 5, for the schematic diagram of the light emitting device of the 5th preferred embodiment according to the present invention.Shine dress
Set 1E and aforementioned light emitting device 1D do not exist together at least that, the single-layer resin component 50 of light emitting device 1E includes a light-transmissive resin portion
Part 60 and a reflection resin component 70.Light-transmissive resin component 60 only covers the upper surface 11 of LED chip 10, reflects resin component 70
The facade 13 of LED chip 10 and the side 61 of light-transmissive resin component 60 are covered simultaneously.
Since reflection resin component 70 covers the side 61 of facade 13 and light-transmissive resin component 60, LED chip 10 can be prevented
The light emitted will be projected from facade 13 and side 61, and concentrate the light emitting region of light emitting device 1E relatively.
It please refers to shown in Fig. 6, for the schematic diagram of the light emitting device of the 6th preferred embodiment according to the present invention.Shine dress
Set 1F and light emitting device 1E do not exist together at least that, the reflection resin component 70 of light emitting device 1F is covered in facade 13, and light transmission
Resin component 60 covers the upper surface 11 of LED chip 10 simultaneously and reflects the upper surface 71 of resin component 70.Whereby, light emitting device
1F can also have the light emitting region relatively concentrated.
To sum up, the light emitting device 1A- light emitting device 1F of each embodiment is different in structure, but all has upturned
Bottom surface 22 and 52, with formed spill design so that light emitting device 1A to light emitting device 1F any one can be effectively improved welding lose
It loses or the disadvantages associateds such as welding quality is bad, and then obtains more preferably reliability and luminous efficiency.
Then the manufacturing method of the light emitting device by explanation according to the present invention, which can produce same or like
In the light emitting device 1A- light emitting device 1F of above-described embodiment, therefore the technology contents of manufacturing method and light emitting device 1A- light emitting device
The technology contents of 1F can be referred to mutually.
The manufacturing method of light emitting device may include two big stages: one or more thermosetting materials are covered a LED chip
Upper surface and facade;And it is thermally cured material heating, so that thermosetting material is solidified and is shunk, has one to tilt upward to be formed
The clad structure of bent bottom surface.The technology contents in each stage will cooperate each preferred embodiment to further illustrate (manufacturing method
The technology contents of each embodiment can should also refer to mutually, therefore identical part will be omitted or simplified).
It please refers to shown in Fig. 7 A to Fig. 7 E, is the step schematic diagram of the first preferred embodiment of the manufacturing method of the present invention.
As shown in Figure 7 A, a separated type material 80 is provided first, and separated type material 80 can also be placed in a support construction (such as
Silicon substrate or glass substrate, not shown) on;Then, one or more LED chips 10 are placed on separated type material 80.Preferably
The electrode group 14 on ground, LED chip 10 can be fallen into separated type material 80, make the lower surface 12 of LED chip 10 by separated type material 80
Masking, such electrode group 14 finally can be more suitably exposed with sharp electrically engagement.
As shown in Figure 7 B, then by lower layer's resin material 40 ', (i.e. a thermosetting material can be corresponded to shown in figure 1A
The manufacture material of the lower-layer resin component 40 of light emitting device 1A) it is covered in upper surface 11 and the facade 13 of LED chip 10;This step
In, lower-layer resin material 40 ' not yet solidifies, and this step can pass through spraying (spraying) or rotary coating (spin
) etc. coating techniques are reached.
Then certain temperature (such as 150 DEG C, but do not limit) is heated to lower-layer resin material 40 ', and is maintained at the temperature
It spends in certain time, so that the lower-layer resin material 40 ' starts heat cure and generates volume contraction.After the completion of heat cure (and
After cooling), the lower-layer resin component 40 of corresponding light emitting device 1A shown in figure 1A can be formed, forms concave structure at this time
The first main mechanism.Preferably, lower-layer resin material 40 ' includes a fluorescent material, the TaiWan, China patent certificate of applicant
The forming method of fluorescence coating disclosed by number I508331, the technique for being highly suitable for this step, the technology of the TaiWan, China patent
Content is incorporated by herein.
As seen in figure 7 c, it is (i.e. another that a upper layer resin material 30 ' is then stacked on cured lower-layer resin material 40 '
One thermosetting material can correspond to the manufacture material of the upper layer resin component 30 of light emitting device 1A shown in figure 1A);This step
In, upper layer resin material 30 ' not yet solidifies, and this step can also pass through the techniques such as spraying, printing or dispensing (dispensing)
To reach.
After the completion of stacking, start to be heated to certain temperature to upper layer resin material 30 ', make upper layer resin material 30 ' by
Heat cure simultaneously generates volume contraction.After the completion of heat cure (and after cooling), corresponding light emitting device 1A shown in figure 1A can be formed
Upper layer resin component 30, and will occur between the upper layer resin material 30 ' and cured lower-layer resin material 40 ' after solidifying
The second main mechanism and third main mechanism for forming concave structure, make the warpage more up of bottom surface 22;Specific reason can refer to
The explanation of the relevant paragraph of aforementioned light emitting device 1A.
Lower-layer resin material 40 ' and upper layer resin material 30 ' after solidification can form one or more with upturned
Bottom surface 22 clad structure 20 ', the clad structure 20 of light emitting device 1A shown in figure 1A can be corresponded to.
As illustrated in fig. 7d, after upper layer resin material 30 ' and lower-layer resin material 40 ' solidify, separated type material 80 can be moved
It removes, at this time after stress release, a curved surface would generally be presented in multiple clad structures 20 ' being connected with each other;Then as seen in figure 7e, will
Connected clad structure 20 ' is cut, and to obtain multiple light emitting device 1A ', can correspond to light emitting device 1A shown in figure 1A.
It can be seen from the above, light emitting device 1A ' is during fabrication, it is the step of repeating heat cure at least twice, to make at least two
Thermosetting material sequentially solidifies, to form the clad structure 20 ' with upturned bottom surface 22.
It please refers to shown in Fig. 8 A to Fig. 8 F, is the step schematic diagram of the second preferred embodiment of the manufacturing method of the present invention.
As shown in Figure 8 A, one or more LED chips 10 are placed on separated type material 80 first, then such as Fig. 8 B institute
Show, multiple cured light-transmissive resin materials 44 ' is covered each by the upper surface 11 of LED chip 10, wherein thermosetting property can be passed through
Light-transmissive resin material 44 ' is affixed to the upper surface 11 of LED chip 10 by viscose glue (such as silica gel, not shown), and then heating makes
Photopolymer resin material 44 ' more securely fits together with LED chip 10.
Then as shown in Figure 8 C, reflection resin material 45 ' is covered in the facade 13 and light-transmissive resin material of LED chip 10
The side 441 ' (side 441 that the light-transmissive resin component 44 of light emitting device 1C shown in Fig. 3 can be corresponded to) of material 44 ', and to anti-
Penetrating the heating of resin material 45 ' makes its solidification generation volume contraction (it is main that first occur between reflection resin material 45 ' and facade 13
Mechanism, and volume contraction caused by temperature change occurs for light-transmissive resin material 44 ').Reflection resin material 45 ' after solidification can
The reflection resin component 45 of corresponding light emitting device 1C shown in Fig. 3, and oneself be incited somebody to action in the bottom surface 22 of the reflection resin material 45 ' after solidify
The upturned (not shown) in lower surface 12 of LED chip 10.
In next step as in fig. 8d, it is stacked on one on cured light-transmissive resin material 44 ' and reflection resin material 45 '
Layer resin material 30 ', and upper layer resin material 30 ' is heated to its solidification is made to generate volume contraction, occur to be formed at this time and sends out recessed
Second main mechanism of type structure and third main mechanism, and then drive the bottom surface 22 of reflection resin material 45 ' warpage more up.
Upper layer resin material 30 ', light-transmissive resin material 44 ' after solidification and reflection resin material 45 ' can be formed one or
Multiple clad structures 20 ' with upturned bottom surface 22.Then as illustrated in fig. 8e, separated type material 80 is removed, is schemed for another example
Shown in 8F, connected clad structure 20 ' is cut, to obtain multiple light emitting device 1C ', hair shown in Fig. 3 can be corresponded to
Electro-optical device 1C.
It remarks additionally, in the second embodiment of the manufacturing method of the present invention, if omit step shown in Fig. 8 D (
Omit upper layer resin material 30 '), manufactured light emitting device can correspond to light emitting device 1E as shown in Figure 5.
Furthermore in the second embodiment of the manufacturing method of the present invention, if then being carried out after completing step shown in Fig. 8 A
Corresponding steps shown in Fig. 8 C, forming a reflection resin material 45 ' makes it cover the facade 13 of LED chip 10, but does not cover LED
The upper surface 11 of chip 10, then heating makes to reflect the solidification of resin material 45 ', and then, forming a light-transmissive resin material 44 ' makes it
The upper surface 11 of LED chip 10 and the upper surface of reflection resin material 45 ' are covered simultaneously, are so connected again such as Fig. 8 D to Fig. 8 F institute
The corresponding steps shown, manufactured light emitting device can correspond to light emitting device 1B shown in Fig. 2;Wherein, if omitting Fig. 8 D institute
The corresponding steps (i.e. omission upper layer resin material 30 ') shown, manufactured light emitting device can correspond to luminous dress shown in fig. 6
Set 1F.
It please refers to shown in Fig. 9 A to Fig. 9 D, is the step schematic diagram of the third preferred embodiment of the manufacturing method of the present invention.
As shown in Figure 9 A, one or more LED chips 10 are placed on separated type material 80;Then as shown in Figure 9 B, will
One resin material 50 ' covers upper surface 11 and the facade 13 of LED chip 10, and generates its solidification the heating of resin material 50 '
Volume contraction.Resin material 50 ' after solidification can correspond to the single-layer resin component 50 of light emitting device 1D shown in Fig. 4, and solidify
Resin material 50 ' afterwards because occur formed hair concave structure first main mechanism due to make its bottom surface 52 under LED chip 10
Surface 12 is upturned.
As shown in Figure 9 C, after resin material 50 ' solidifies, separated type material 80 can be removed, then as shown in fig. 9d, by phase
Resin material 50 ' even separates, and to obtain multiple light emitting device 1D ', can correspond to light emitting device 1D shown in Fig. 4.
In summary, the manufacturing method of light emitting device of the invention can produce various shining with upturned bottom surface
Device, and a large amount of light emitting device can be manufactured by basis.
The above embodiments are only used to enumerate state sample implementation of the invention, and illustrate technical characteristic of the invention, not
For limiting protection category of the invention.Anyone skilled in the art can the arrangement of unlabored change or equality belong to
In the range that the present invention is advocated, the scope of the present invention be should be subject to the claims.
Claims (19)
1. a kind of light emitting device, characterized by comprising:
One LED chip has a upper surface, a lower surface, a facade and an electrode group relative to the upper surface, the facade
It is formed between the upper surface and the lower surface, which is set on the lower surface;And
One clad structure covers the upper surface and the facade, and the clad structure includes a top surface, the bottom relative to the top surface
Apart, the bottom surface is certainly for the upper surface of face and the one side being formed between the top surface and the bottom surface, the top surface and the LED chip
The lower surface of the LED chip is upturned, and the top surface is recessed to the upper surface of the LED chip;
Wherein, which includes a upper layer resin component and lower layer's resin component, which covers on this
Surface and the facade, and the upper layer resin component is stacked on the lower-layer resin component.
2. light emitting device as described in claim 1, which is characterized in that the upturned bottom surface has an edge, the edge
With the facade at a distance of a horizontal distance and with the lower surface at a distance of a vertical range, the ratio of the vertical range and the horizontal distance
Not less than 0.022.
3. light emitting device as described in claim 1, which is characterized in that the top surface and the upper surface of the LED chip are at a distance of 50
Micron is to 1000 microns.
4. light emitting device as described in claim 1, which is characterized in that the lower-layer resin component include one top, a side and
One extension, the top cover the upper surface of the LED chip, which covers the facade of the LED chip, and the extension
Extend outwardly from the side.
5. the light emitting device as described in any claim in Claims 1-4, which is characterized in that the lower-layer resin component is
One single-layer or multi-layer shape component, the upper layer resin component are a single-layer or multi-layer shape component.
6. the light emitting device as described in any claim in Claims 1-4, which is characterized in that the clad structure further includes
An at least fluorescent material and/or at least an optical scattering particle.
7. light emitting device as described in claim 1, which is characterized in that the lower-layer resin component include a light-transmissive resin component and
One reflection resin component, the reflection resin component cover the facade of the LED chip, which covers the LED core
It the upper surface of piece and stacks on the reflection resin component.
8. light emitting device as described in claim 1, which is characterized in that the lower-layer resin component include a light-transmissive resin component and
One reflection resin component, the light-transmissive resin component cover the upper surface of the LED chip, which covers the LED
The facade of chip and the one side for covering the light-transmissive resin component.
9. a kind of light emitting device, characterized by comprising:
One LED chip has a upper surface, a lower surface, a facade and an electrode group relative to the upper surface, the facade
It is formed between the upper surface and the lower surface, which is set on the lower surface;And
One single-layer resin component covers the upper surface of the LED chip and the facade of the LED chip, and the single-layer resin portion
Part includes a top surface, the bottom surface relative to the top surface and the one side that is formed between the top surface and the bottom surface, the top surface with
Apart, the lower surface of the bottom surface from the LED chip is upturned for the upper surface of the LED chip, and the top surface is to the LED core
The upper surface of piece is recessed;
Wherein, which has an edge, the facade of the edge and the LED chip at a distance of a horizontal distance and with the LED core
The lower surface of piece is at a distance of a vertical range, and the ratio of the vertical range and the horizontal distance is not less than 0.022.
10. light emitting device as claimed in claim 9, which is characterized in that the single-layer resin component includes a light-transmissive resin component
And a reflection resin component, which covers the upper surface of the LED chip, and reflection resin component covering should
The facade of LED chip and the one side for covering the light-transmissive resin component.
11. light emitting device as claimed in claim 9, which is characterized in that the single-layer resin component includes a light-transmissive resin component
And a reflection resin component, which covers the facade of the LED chip, which covers the LED
The upper surface of chip and the upper surface for covering the reflection resin component.
12. the light emitting device as described in any claim in claim 10 to 11, which is characterized in that the single-layer resin component
Or the light-transmissive resin component further includes a fluorescent material and/or an optical scattering particle.
13. a kind of manufacturing method of light emitting device, characterized by comprising:
One thermosetting material is covered to a upper surface and the facade of a LED chip;
The thermosetting material is heated, so that the thermosetting material solidify and shrinks, to be formed with a bottom surface and a top surface
One clad structure,
Wherein, a lower surface of the bottom surface from the LED chip is upturned, and the upper surface of the top surface to the LED chip is recessed
It falls into.
14. the manufacturing method of light emitting device as claimed in claim 13, which is characterized in that the thermosetting material by spraying,
Printing, dispensing or rotary coating cover the LED chip.
15. the manufacturing method of light emitting device according to claim 13 or 14, which is characterized in that the thermosetting material includes one
Lower-layer resin material and a upper layer resin material, the lower-layer resin material cover the upper surface and LED chip of the LED chip
The facade, be then heated and solidify and shrink;The upper layer resin material is stacked in the cured lower-layer resin material, so
After be heated and solidify and shrink.
16. the manufacturing method of light emitting device according to claim 13 or 14, which is characterized in that the thermosetting material includes
Cured light-transmissive resin material, a upper layer resin material and a reflection resin material, the cured light-transmissive resin material are put
It is placed in the upper surface of the LED chip;The reflection resin material cover the LED chip the facade and the cured light transmission tree
The one side of rouge material, is then heated and solidifies and shrink;The upper layer resin material is stacked in the cured light-transmissive resin
On material and the reflection resin material, then it is heated and solidifies and shrink.
17. the manufacturing method of light emitting device according to claim 13 or 14, which is characterized in that the thermosetting material includes one
Resin material, which covers the upper surface of the LED chip and the facade of the LED chip, and is then heated and consolidates
Change and shrink, to form a single-layer resin component.
18. the manufacturing method of light emitting device according to claim 13 or 14, which is characterized in that the thermosetting material includes one
Light-transmissive resin material and a reflection resin material, the reflection resin material cover the facade, are then heated and solidify and shrink;
The light-transmissive resin material covers the upper surface and is stacked on the cured reflection resin material, be then heated and solidify and
It shrinks.
19. the manufacturing method of light emitting device according to claim 13 or 14, which is characterized in that the thermosetting material includes
Cured light-transmissive resin material and a reflection resin material, the cured light-transmissive resin material are placed in the LED chip
The upper surface;The reflection resin material covers the facade of the LED chip and the one side of the cured light-transmissive resin material,
Then it is heated and solidifies and shrink.
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US15/402,087 US10615320B2 (en) | 2016-01-12 | 2017-01-09 | Recessed chip scale packaging light emitting device and manufacturing method of the same |
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