TWI642211B - Beveled chip reflector for csp led device and manufacturing method of the same - Google Patents

Abstract

The invention discloses a chip-level package light-emitting device and a manufacturing method thereof. The light-emitting device includes a flip-chip LED chip, a fluorescent structure, a light-transmitting structure on a side, and a chip reflection structure with an inclined side. The light-transmitting structure on the side is disposed outside the vertical surface of the LED chip, and is located below the fluorescent structure, and has an inclined side; the reflective structure covers the inclined side of the light-transmitting structure on the side and surrounds the LED chip. In this way, the reflective structure with inclined sides can effectively reflect the light emitted from the LED chip to the light exit surface to extract out of the light emitting device, which can increase the light extraction efficiency of the light emitting device.

Description

   Wafer-level packaged light-emitting device with beveled wafer reflection structure and manufacturing method thereof   

The invention relates to a light-emitting device and a manufacturing method thereof, in particular to a wafer-level packaged light-emitting device with an LED chip and a manufacturing method thereof.

LED (Light Emitting Diode) chips are commonly used to provide light sources for illumination, backlight, or indication, and LED chips are usually placed in a packaging structure to become a light emitting device, or further covered by fluorescent materials Or cover, and become a white light emitting device.

The light-emitting device can obtain good luminous efficiency through an appropriate design scheme. For example, as shown in FIG. 1A, it is a traditional high-efficiency bracket-type (Plastic Leaded Chip Carrier, PLCC) LED package, usually including a Horizontal LED chip 80 and a support structure 81. The LED chip 80 is electrically connected to the support structure 81 through the gold wire 82, and the support structure 81 includes a reflective cup 811 to reflect the light in the package to the light exit surface through the reflection The design of the cup can effectively increase the luminous efficiency of the PLCC LED package, but the PLCC LED package has its inherent limitations, including: (1), the difference in the travel path of the light in the fluorescent glue is large, resulting in poor spatial color uniformity and eventually yellow. Halo, (2), the light output area is much larger than the LED chip area, resulting in a large etendue, making the secondary optical lens difficult to design, (3), the large thermal resistance causes heat dissipation, which will lead to luminous efficiency Decline.

With the evolution of LED technology, chip-scale packaging (chip-scale packaging, CSP) light-emitting devices have received significant attention in recent years due to their obvious advantages. Since the CSP light-emitting device is only composed of a flip-chip LED chip and a package structure (usually including a fluorescent material) encapsulating the LED chip, compared with the traditional PLCC LED package, the CSP light-emitting device has the following advantages: (1) No gold wires and additional brackets are needed, so material cost can be significantly saved; (2) Because the brackets are omitted, the thermal resistance between the LED chip and the heat sink can be further reduced, so it will have lower operation under the same operating conditions Temperature, or further increase the operating power to obtain greater light output; (3) lower operating temperature can make LED chips have higher chip quantum conversion efficiency; (4) greatly reduced package size makes the design of modules Or lamps, it has greater design flexibility; (5) has a small light-emitting area, so the etendue can be reduced, making secondary optics easier to design, or to obtain high luminous intensity.

Taking the most widely used white light CSP light emitting device as an example, the size of the light emitting angle can be divided into two types. The first type is a "five-sided light emitting" CSP light-emitting device, which consists of a flip chip LED chip and a fluorescent structure covering the LED chip. The fluorescent structure covers the upper surface and four sides of the LED chip, so The CSP light emitting device can emit light from its top surface and four side surfaces, that is, light is emitted from five surfaces in different directions (five-sided light emission). According to the ratio of different appearance dimensions, the luminous angle of the five-sided CSP light emitting device is between 140 degrees and 160 degrees. Due to the large luminous angle, it is suitable for applications requiring large-angle light sources, such as lighting, direct-lit backlight module light sources Wait.

The second type is a "front-emitting" CSP light-emitting device, which is composed of a flip-chip LED chip, a fluorescent structure and a reflective structure. The fluorescent structure is arranged above the LED chip, and the reflective structure surrounds the LED chip. And cover the four sides of the LED chip, because the reflective structure will reflect the light emitted by the LED chip and the fluorescent structure back to the inside of the package, so that the CSP light emitting device can only emit light from the top surface (front light emission). The front-emitting CSP light-emitting device has a light-emitting angle between 115 degrees and 125 degrees, which can provide a small light-emitting angle and is suitable for the application of high-directional light sources, such as projection lamps and side-entry LED backlight module light sources.

However, as the size of the light emitting device becomes smaller and smaller, the solution that can be applied to the conventional light emitting device, such as the reflector cup design of the PLCC LED package, will become difficult to apply to the wafer-level package light emitting device. As in the conventional front-emitting CSP light-emitting device, due to the limitation of the existing process technology, the reflective structure closely covers the side of the LED chip and / or the fluorescent structure. This structure will allow the light emitted from the LED chip to the four sides Most of it is reflected back to the LED chip by the four-side reflective structure of the LED chip. After multiple reflections in the chip, it can be directed to the top surface of the fluorescent structure to be drawn out of the CSP light-emitting device, resulting in more light energy Loss inside the CSP light-emitting device reduces the overall light-emitting efficiency.

Therefore, in the technical content disclosed in the Taiwan Patent Application No. 104132711 (corresponding to the US Patent Application No. 15 / 280,927), a front light emitting CSP light emitting device with a lead angle reflective structure is proposed, as shown in FIG. 1B As shown, the CSP light-emitting device has a flip chip LED chip 83, a fluorescent structure 84 and a reflective structure 85, wherein the reflective structure 85 covers the sides of the LED chip 83 and the fluorescent structure 84, and has a lead angle 851 The lead angle 851 presents a reflective slope with respect to the fluorescent structure 84. Through the design of the lead angle 851, light can be efficiently extracted from the fluorescent structure 84, thereby improving the overall luminous efficiency. However, the reflective structure 85 still closely covers the four sides of the LED chip 83, so a vertical reflective surface 852 is formed, causing the light from the LED chip 83 to the reflective structure 85 is still mostly reflected back to the LED chip 83 The loss of light energy cannot effectively direct the light emitted by the LED chip 83 to the direction of the fluorescent structure.

In view of this, providing a more effective way to absorb the light emitted by the LED chip to improve the luminous efficiency of the CSP light-emitting device, and is suitable for batch-type (batch process) mass production technical solutions, can effectively solve the industry in the manufacturing of CSP light-emitting devices The problems encountered.

An object of the present invention is to provide a chip-scale packaging (CSP) light-emitting device and a method for manufacturing the same, which can improve the luminous efficiency of a front-emitting CSP light-emitting device, and is also suitable for batch process Production to reduce production costs.

To achieve the above object, a light-emitting device disclosed by the present invention includes a flip-chip LED chip, a fluorescent structure, a transparent structure on the side, and a reflective structure. The flip chip LED chip has an upper surface, a lower surface opposite to the upper surface, a vertical surface and an electrode group, the vertical surface is formed between the upper surface and the lower surface, the electrode group is disposed at the lower surface On the surface; the fluorescent structure has a first surface, a second surface opposite to the first surface and a side surface, the side surface is formed between the first surface and the second surface, the first of the fluorescent structure The two surfaces are disposed on the flip-chip LED chip and are larger than the upper surface; the side transparent structure is disposed between the upright surface of the flip-chip LED chip and the second surface of the fluorescent structure, and It includes an inclined side surface which is inclined with respect to the second surface and the vertical surface; the reflective structure covers the inclined side surface of the side light-transmissive structure.

To achieve the above purpose, another light-emitting device disclosed by the present invention includes a flip-chip LED chip, a light-transmitting layer, a light-transmitting structure on a side, and a reflective structure. The flip chip LED chip has an upper surface, a lower surface opposite to the upper surface, a vertical surface and an electrode group, the vertical surface is formed between the upper surface and the lower surface, the electrode group is disposed at the lower surface On the surface; the light-transmitting layer has a first surface, a second surface opposite to the first surface and a side surface, the side surface is formed between the first surface and the second surface, the first of the light-transmitting layer The two surfaces are disposed on the flip-chip LED chip and are larger than the upper surface; the side transparent structure is disposed between the upright surface of the flip-chip LED chip and the second surface of the light-transmitting layer, and It includes an inclined side surface which is inclined with respect to the second surface and the vertical surface; the reflective structure covers the inclined side surface of the side light-transmissive structure.

To achieve the above object, a method for manufacturing a light-emitting device disclosed by the present invention includes: forming a light-transmitting adhesive to a surface of a diaphragm; and pressing a plurality of flip-chip LED chips onto the diaphragm, wherein , The upper surfaces of the flip-chip LED chips face the surface of the diaphragm on which the light-transmissive adhesive has been provided; the light-transmittable adhesive is pressed to the elevation of the flip-chip LED chips and the Between the surfaces of the diaphragm to form a plurality of light-transmitting structures on the sides; curing the light-transmitting structures on the sides, wherein each of the light-transmitting structures on the sides includes an inclined surface relative to the surface and the vertical surface An inclined side; forming a plurality of reflective structures to cover the inclined sides of the light-permeable structures of the sides; and cutting the reflective structures.

To achieve the above object, another method of manufacturing a light-emitting device disclosed by the present invention includes: disposing a plurality of flip-chip LED chips on a surface of a diaphragm, wherein the upper surfaces of the flip-chip LED chips face the film The surface of the chip; between the elevations of the flip-chip LED chips and the surface of the diaphragm, a light-transmitting adhesive is injected to form a plurality of light-transmitting structures on the sides, wherein the sides Each of the light-transmissive structures includes an inclined side surface inclined relative to the surface and the vertical surface; curing the light-transmitting structures on the side surfaces; forming a plurality of reflective structures to cover the side light-transmitting structures respectively Equally inclined sides; and cutting the reflective structure.

Thereby, the light-emitting device and the manufacturing method of the present invention can provide at least the following effects: (1), the reflective structure with inclined sides functions similarly to the reflective cup of the PLCC LED package, which can direct the light emitted from the LED chip sideways Effectively reflected to the light emitting surface of the light emitting device, compared with the conventional front light emitting CSP light emitting device, it can effectively increase the overall luminous efficiency, and compared with the lead angle front light emitting CSP light emitting device disclosed in the Taiwan patent of Patent Application No. 104132711 , Which guides the light in the fluorescent structure to the light emitting surface of the fluorescent structure through the guide angle, and the reflective structure with inclined sides disclosed in the present invention can more effectively reflect the light emitted by the LED chip and guide it to the fluorescent structure ; (2), the manufacturing material of the light-transmitting structure on the side can be a light-transmitting resin material with a low refractive index, so the interface between the facade of the LED chip and the light-transmitting structure on the side is more likely to produce total reflection, so that the LED chip The emitted light is more effectively transmitted from the upper surface of the LED chip to the outside, which can increase the overall light extraction efficiency; (3) Through the process control, the reflective structure can have three different types Inclined side surface, including concave curved surface, inclined flat surface, and convex curved surface, the inclined side surface can also completely cover or partially cover the facade of the LED chip, thereby further adjusting the overall luminous efficiency of the light emitting device; (4), through the process Control, or the use of a multilayer fluorescent structure, can achieve the effect of a remote phosphor layer (remote phosphor), can reduce the heat generated by the LED chip on the phosphor layer, and further increase the light conversion efficiency of the fluorescent material; (5) The light-emitting device is a CSP light-emitting device, so it has a small size in appearance, and its shape is only slightly larger than the LED chip; (6), the manufacturing method is suitable for batch-type (batch process) mass production, which can be effective reduce manufacturing cost.

In order to make the above purpose, technical features and advantages more comprehensible, the following is a detailed description with preferred embodiments and accompanying drawings.

1A, 1B, 1C, 1C ’, 1C”, 1D, 1E, 1F, 1F ’, 1G, 1H, 1I, 1J‧‧‧

10‧‧‧LED chip

100‧‧‧LED chip array

11‧‧‧Upper surface

12‧‧‧Lower surface

13‧‧‧Facade

14‧‧‧Electrode group

20‧‧‧ fluorescent structure

20’‧‧‧ diaphragm, fluorescent diaphragm

201‧‧‧fluorescent layer

202‧‧‧Transparent layer

203‧‧‧lens array layer

21,21’‧‧‧First surface

22,22’‧‧‧Second surface

23‧‧‧Side

30‧‧‧Transparent side structure

300‧‧‧Translucent adhesive

31‧‧‧Upper surface

32‧‧‧Side

33‧‧‧Tilt side

40‧‧‧Reflective structure

41‧‧‧Bottom

42‧‧‧Outside

43‧‧‧Inner inclined surface, inner inclined side surface

44‧‧‧Inside

50‧‧‧ substrate

60‧‧‧release film

70‧‧‧ Wall Department

80‧‧‧LED chip

81‧‧‧Bracket

811‧‧‧Reflecting cup

82‧‧‧Golden thread

83‧‧‧LED chip

84‧‧‧ fluorescent structure

85‧‧‧Reflective structure

851‧‧‧Lead angle

852‧‧‧Vertical reflection surface

90,900‧‧‧ adhesive layer

L‧‧‧Light

FIGS. 1A and 1B are full cross-sectional views of the light-emitting device disclosed in the prior art.

FIG. 2 is a full cross-sectional view of a light emitting device according to the first preferred embodiment of the present invention.

FIG. 3A is a full cross-sectional view of a light emitting device according to a second preferred embodiment of the present invention.

Fig. 3B, Fig. 3C and Fig. 3D are the manufacturing result diagrams of the light emitting device according to the second preferred embodiment of the present invention.

4A, 4B and 4C are full cross-sectional views of a light emitting device according to a third preferred embodiment of the present invention.

Fig. 5 is a full cross-sectional view of a light emitting device according to a fourth preferred embodiment of the present invention.

Fig. 6 is a full cross-sectional view of a light emitting device according to a fifth preferred embodiment of the present invention.

7A and 7B are full cross-sectional views of a light emitting device according to a sixth preferred embodiment of the present invention.

Fig. 8 is a full cross-sectional view of a light emitting device according to a seventh preferred embodiment of the present invention.

FIG. 9 is a full cross-sectional view of a light emitting device according to an eighth preferred embodiment of the present invention.

Fig. 10 is a full cross-sectional view of a light emitting device according to a ninth preferred embodiment of the present invention.

FIG. 11 is a full cross-sectional view of a light emitting device according to a tenth preferred embodiment of the present invention.

FIGS. 12A to 18 are schematic diagrams of steps of the method for manufacturing a light emitting device according to the first preferred embodiment of the present invention.

19 to 21 are schematic diagrams of steps of a method for manufacturing a light emitting device according to a second preferred embodiment of the present invention.

FIGS. 22A, 22B, and 22C are schematic diagrams of a method for assisting in forming different types of inclined side surfaces in the method of manufacturing a light emitting device according to the second preferred embodiment of the present invention.

23 to 26 are schematic diagrams of steps of a method for manufacturing a light emitting device according to a third preferred embodiment of the present invention.

Please refer to FIG. 2, which is a schematic diagram of a light emitting device according to the first preferred embodiment of the present invention. The light-emitting device 1A is a chip-scale packaging (CSP) light-emitting device, which may include an LED chip 10, a fluorescent structure 20, a light-transmitting structure 30 on a side, a reflective structure 40 and an adhesive layer 90 The technical content of these components will be explained in order as follows.

The LED chip 10 may be a flip-chip LED chip, and may have an upper surface 11, a lower surface 12, a vertical surface 13, and an electrode group 14 in appearance. The upper surface 11 and the lower surface 12 are oppositely and oppositely arranged, and the side surface 13 is formed between the upper surface 11 and the lower surface 12 and connects the upper surface 11 and the lower surface 12. The electrode group 14 is disposed on the lower surface 12 and may have more than two electrodes. Electric energy (not shown) can be supplied into the LED chip 10 through the electrode group 14, and then the LED chip 10 emits light. Most of the light emitted by the LED chip 10 exits from the upper surface 11 and part of it exits from the facade 13.

The fluorescent structure 20 can change the wavelength of the light emitted by the LED chip 10, and can have a first surface 21, a second surface 22, and a side surface 23 in appearance; the first surface 21 and the second surface 22 are opposite and opposite The side surface 23 is formed between the first surface 21 and the second surface 22 and connects the first surface 21 and the second surface 22. Both the first surface 21 and the second surface 22 can be horizontal planes, so the two can be parallel to each other.

The fluorescent structure 20 may include a fluorescent layer 201 and a transparent layer 202 (in other embodiments, the fluorescent layer 201 and the transparent layer 202 may be plural), and the transparent layer 202 is formed on the fluorescent On the layer 201, it can be said that the light-transmitting layer 202 is stacked on the fluorescent layer 201. Both the light-transmitting layer 202 and the fluorescent layer 201 can allow light to pass through, so their manufacturing materials can include a light-transmitting material such as a transparent resin, such as silicone, epoxy, rubber, etc., and the manufacturing material of the fluorescent layer 201 It further contains fluorescent materials, such as fluorescent powder, quantum dots, etc., which are mixed in the light-transmitting material. In addition, the manufacturing materials of the light-transmitting layer 202 and the fluorescent layer 201 may also include inorganic light-transmitting materials such as glass and alumina to obtain better characteristics such as heat resistance, water resistance, or reliability. When the light emitted by the LED chip 10, such as blue light or ultraviolet light, passes through the fluorescent layer 201, part of the wavelength of the light will be changed by the fluorescent layer 201 and converted into light of another color, such as yellow light, red light or green light The light then passes through the light-transmitting layer 202; after the light is mixed with each other, a white light can be formed.

Although the light-transmitting layer 202 does not change the wavelength of light, it can protect the fluorescent layer 201, so that the substances in the environment are not easily contacted with the fluorescent layer 201. In addition, the light-transmitting layer 202 can also increase the overall structural strength of the fluorescent structure 20, so that the fluorescent structure 20 is not easy to bend, providing sufficient operability in production.

The fluorescent structure 20 is disposed on the LED chip 10 in position, and is bonded to the upper surface 11 of the LED chip 10 through the adhesive layer 90 and to the second surface 22 of the fluorescent structure 20. In other words, the entire fluorescent structure 20 is located on the upper surface 11 of the LED chip 10, and the adhesive layer 90 is interposed between the fluorescent structure 20 and the LED chip 10.

In terms of size, the second surface 22 of the fluorescent structure 20 is larger than the upper surface 11 of the LED chip 10, so looking down along the normal direction, the fluorescent structure 20 can completely cover the LED chip 10, so that the LED chip 10 can be avoided. The emitted light is transmitted to the outside without passing through the fluorescent structure 20, causing light leakage, and at the same time providing the space required to form the side light-transmitting structure 30 described later. The second surface 22 of the fluorescent structure 20 is adhered to the upper surface 11 of the LED chip 10 through a transparent adhesive (such as silicone, epoxy, rubber, etc.), and an adhesive layer 90 is formed, so that the fluorescent structure 20 and The LED chips 10 have better fixing effect, and the adhesive layer 90 can have different thicknesses under the control of process conditions. Preferably, the thickness of the adhesive layer 90 can be about 1 micrometer, about 5 micrometers, about 10 micrometers , About 20 microns, by which the fluorescent structure 20 and the LED chip 10 can be separated by a distance to achieve the effect of a remote phosphor layer (remote phosphor), which can reduce the heat generated by the LED chip 10 on the phosphor layer Influence, further increase the light conversion efficiency of fluorescent materials.

The side light-transmitting structure 30 is disposed between the vertical surface 13 of the LED chip 10, the side surface of the adhesive layer 90 and the second surface 22 of the fluorescent structure 20, and surrounds the LED chip 10 and the adhesive layer 90, so the side surface The whole light-transmitting structure 30 is located under the second surface of the fluorescent structure 20. In appearance, the side light-transmitting structure 30 has an upper surface 31, a side surface 32 and an inclined side surface 33. Preferably, the upper surface 31 is attached to the second surface 22 of the fluorescent structure 20, and the side surface 32 is attached to the side surface of the vertical surface 13 of the LED chip 10 and the adhesive layer 90, wherein the side surface can transmit the structure 30 and the fluorescent light The structure 20, the LED chip 10 and the adhesive layer 90 can be closely bonded, that is, there is no gap between the bonding surfaces. As shown in the cross-sectional view of the light-emitting device 1A in FIG. 2, the inclined side surface 33 is a continuous smooth curved surface, and is inclined with respect to the vertical surface 13 of the LED chip 10 and the second surface 22 of the fluorescent structure 20. In this embodiment The inclined side surface 33 is a concave curved surface, and the upper surface 31, the side surface 32 and the inclined side surface 33 can be connected to each other.

The light-transmitting structure 30 on the side allows light to pass through, so the manufacturing material may include a light-transmitting material such as light-transmitting resin, such as silicone, epoxy, rubber, and the like. According to the different light-transmitting materials selected, the side light-transmitting structure 30 may have different optical properties such as Transmittance and Refraction Index.

The reflective structure 40 covers the inclined side 33 of the light-transmissive structure 30 on the side. In this embodiment, the reflective structure 40 does not cover the side 23 of the fluorescent structure 20. Since part of the light emitted by the LED chip 10 passes through the facade 13 and enters the side light-transmitting structure 30, and the reflective structure 40 blocks and reflects the light, the light is reflected by the reflective structure 40 at the inclined side 33 , And is directed to the fluorescent structure 20.

Preferably, when the reflective structure 40 covers the inclined side surface 33, by bonding the inclined side surface 33, there is no gap between the reflective structure 40 and the inclined side surface 33. Therefore, the reflective structure 40 has an inner inclined surface (or inner inclined side surface) 43 that fits with the inclined side surface 33; as shown in FIG. 2, the inclined side surface 33 is a concave side surface, so the matched inner inclined surface 43 In order to oppose the convex inner side surface, the inner surface of the reflective structure 40 can present a convex cup-shaped reflective surface. In addition, in this embodiment, the reflective structure 40 has a bottom surface 41 and an outer side surface 42. The bottom surface 41 is connected to the lower surface 12 of the LED chip 10 and may be flush with the lower surface 12, and the outer side surface 42 may be a vertical surface.

In terms of manufacturing materials, the reflective structure 40 can be made of a material that includes a light-transmissive resin, and the light-transmissive resin can include a light-scattering particle, wherein, preferably, one percent by weight of the light-scattering particle Not less than 20% to provide proper light reflection characteristics. The light-transmitting resin may be, for example, polyphthalamide (PPA), polycyclolexylene-di-methylene terephthalate (PCT), or thermosetting epoxy resin (Epoxy) molding compound (EMC), silicone or low-refractive index silicone (refractive index can be about 1.35 to 1.45); light-scattering particles can be titanium dioxide (TiO2), boron nitride (BN), silicon dioxide (SiO2), Aluminum oxide (Al2O3) or its combination, other oxide, nitride or ceramic particles with similar functions can also be used; the size of the light-scattering particles can be set to about 0.5 times the visible light wavelength, for example 150 nm to 450 Nano. In addition to the aforementioned manufacturing materials, the reflective structure 40 may also be made of other electronic packaging materials or similar materials.

The above is the technical content of each element of the light-emitting device 1A, and the light-emitting device 1A has at least the following technical features.

The light-transmitting structure 30 on the side has an inclined side 33 (attached to the inner inclined side 43 of the reflective structure 40), and its function is similar to the reflective cup of the PLCC LED package, so that the LED chip 10 can emit light L that is close to the horizontal direction After being reflected by the inclined side 33, it can be transmitted outward more efficiently; in other words, the inclined side 33 helps to reflect the light L emitted from the LED chip 10 to the fluorescent structure 20, making it easier to emit out, thus reducing the light L The chance of being reflected back into the LED chip 10 can effectively reduce the loss of overall light energy. Thereby, the light L emitted from the LED chip 10 can be well drawn out of the CSP light-emitting device 1A, so that the CSP light-emitting device 1A has good light-emitting efficiency. Compared with the reflective structure without inclined sides (the inner side of the reflective structure is vertical), it is easier to reflect the light emitted by the LED chip back to the interior of the LED chip. The inclined side 33 (or inner inclined side 43) improves the overall luminous efficiency, Will be easier to understand.

Preferably, the manufacturing material of the side light-transmitting structure 30 may be a light-transmitting resin material with a low refractive index, so the interface between the vertical surface 13 of the LED chip 10 and the side light-transmitting structure 30 is easier to form total reflection. The light emitted from the LED chip 10 is transmitted from the upper surface 11 to the outside more effectively, which can increase the overall light extraction efficiency.

In addition, compared with the front-emitting CSP light-emitting device with lead angle disclosed in the Taiwan Patent Application No. 104132711 (corresponding to the US Patent Application No. 15 / 280,927), it mainly converts the fluorescent structure into the reflective structure The transmitted light is guided to the light emitting surface of its fluorescent structure through the guide angle, but it does not have a absorbing effect on the light emitted by the facade of the LED chip; and the main function of the inclined side surface 33 in this case is to stand the LED chip 10 The light emitted from the surface 13 is more effectively guided outward, so that the light can be more easily drawn out of the CSP light-emitting device 1A.

The light-emitting device 1A can increase the luminous efficiency by tilting the side surface 33, and can further increase the luminous efficiency by adjusting the refractive indexes of the fluorescent layer 201 and the light-transmitting layer 202 of the fluorescent structure. That is, the refractive index of the light-transmitting layer 202 can be between the fluorescent layer 201 and the air, so that when the light of the LED chip 10 enters the air through the light-transmitting layer 202, the light reflection on the interface can be reduced Light energy loss. There may be more than two light-transmitting layers 202 (not shown), and the refractive indexes of the light-transmitting layers 202 may be different (that is, the manufacturing materials of the two light-transmitting layers 202 are different), and the refractive index of the upper one The refractive index is smaller than the one below, thereby further improving the luminous efficiency.

On the other hand, the light-emitting device 1A is a wafer-level package light-emitting device, so it has a small size in appearance. The overall size of the wafer-level packaged light-emitting device is usually only slightly larger than the size of the LED chip. For example, the length and width of the light-emitting device 1A are not greater than 200%, 150%, or 120% of the length and width of the LED chip.

The above is the description of the technical content of the light-emitting device 1A, and then the technical content of the light-emitting device according to other embodiments of the present invention will be described, and the technical content of the light-emitting devices of the embodiments should be able to refer to each other, so the same parts will be omitted or simplified .

Please refer to FIG. 3A, which is a schematic diagram of a light emitting device according to a second preferred embodiment of the present invention. The light emitting device 1B is different from the light emitting device 1A at least in that the bottom surface 41 of the reflective structure 40 of the light emitting device 1B is inclined upward. The upwardly inclined bottom surface 41 can provide the following beneficial effects: When the light-emitting device 1B is bonded to a substrate (not shown), heat energy is often applied to the light-emitting device 1B and the substrate for reflow soldering or eutectic bonding, but the heat energy Will cause the reflective structure 40, the side transparent structure 30 and the fluorescent structure 20 to expand and cause the bottom surface 41 to deform downward; if the bottom surface 41 is not inclined upward, the bottom surface 41 deformed by heat will push the substrate and cause the light emitting device 1B is lifted, which leads to bonding failure; however, the bottom surface 41 of the reflective structure 40 of the light-emitting device 1B of this embodiment does not push the substrate, because the bottom surface 41 is inclined upward, so good bonding quality can be obtained. For further description of the upwardly inclined bottom surface 41, please refer to the technical content disclosed in the Taiwan Patent Application No. 105100783 (corresponding to the US Patent Application No. 15402087 and the Chinese Patent Application No. 201610033392.0).

Please refer to FIGS. 3B to 3D, which are the production results of three different inclined side surfaces 33 of the light-emitting device 1B. The three light-emitting devices 1B have different inclined side surfaces 33; wherein, the one shown in FIG. 3B has only a few inclined side surfaces 33, and those shown in FIGS. 3C and 3D have larger inclined side surfaces 33.

The following table 1 shows the optical measurement results of the inclined side surface 33 with three different angles of the light-emitting device 1B. Using the same operating current of 350 mA, it can be seen from the measurement results in Table 1 that the light emitting device 1B (Fig. 3B) having the smaller inclined side 33 has the lowest light emitting brightness, which is 127 lumens; the light emitting device shown in Fig. 3D 1B has the highest light-emitting brightness of 131 lumens, which is 3.1% higher than the light-emitting device 1B shown in FIG. 3B. Therefore, when the light-emitting device 1B has a large inclined side surface 33, its light-emitting efficiency can be effectively improved to obtain a higher light-emitting brightness.

Please refer to FIGS. 4A to 4C, which are schematic diagrams of a light emitting device according to a third preferred embodiment of the present invention. In this embodiment, the fluorescent structure 20 has different structures. As shown in FIG. 4A, the light-emitting device 1C is different from other light-emitting devices at least in that in the fluorescent structure 20 of the light-emitting device 1C, the light-transmitting layer 202 is formed under the fluorescent layer 201. That is, the light-transmitting layer 202 is located between the fluorescent layer 201 and the upper surface 11 of the LED chip 10, so the fluorescent layer 201 does not contact the LED chip 10, and the effect of the long-distance fluorescent layer can be achieved. Therefore, the thermal energy generated by the LED chip 10 during operation is less likely to affect the fluorescent layer 201, that is, the temperature of the fluorescent layer 201 is less likely to rise due to the thermal energy, so the fluorescent material in the fluorescent layer 201 can have Better light conversion effect rate. In addition, the refractive index of the fluorescent layer 201 may be smaller than the refractive index of the light-transmitting layer 202 to increase the luminous efficiency.

As shown in FIG. 4B, the light-emitting device 1C 'differs from other light-emitting devices at least in that the fluorescent structure 20 of the light-emitting device 1C' includes a plurality of transparent layers 202, and the fluorescent layer 201 is formed on the transparent layers 202 between. In this configuration, the light-transmitting layer 202 can protect the fluorescent layer 201, and can reduce the influence of the thermal energy of the LED chip 10 on the fluorescent layer 201. In addition, the refractive index of the fluorescent layer 201 may be smaller than the refractive index of the light-transmitting layer 202 located below, but greater than the refractive index of the light-transmitting layer 202 located above, so as to increase the luminous efficiency. If it is necessary to increase the protective effect or thermal insulation effect of the fluorescent layer 201, the transparent layer 202 can be made of inorganic transparent materials such as glass, alumina, or silicon carbide. As shown in FIG. 4C, the light-emitting device 1C "differs from other light-emitting devices at least in that the fluorescent structure 20 of the light-emitting device 1C" is a single-layer fluorescent structure, that is, it includes only the fluorescent layer 201 without light transmission. Floor.

Please refer to FIG. 5, which is a schematic diagram of a light emitting device according to a fourth preferred embodiment of the present invention. The light-emitting device 1D differs from other light-emitting devices at least in that the fluorescent structure 20 of the light-emitting device 1D further includes a lens array layer 203 formed on the fluorescent layer 201. The lens array layer 203 can be integrally formed with the light-transmitting layer 202, so the light-transmitting layer 202 can be regarded as a part of the lens array layer 203. The lens array layer 203 can further increase the light emitting efficiency of the light emitting device 1D.

Please refer to FIG. 6, which is a schematic diagram of a light emitting device according to a fifth preferred embodiment of the present invention. The light-emitting device 1E differs from other light-emitting devices at least in that the light-emitting device 1E further includes a substrate 50, the LED chip 10 is disposed on the substrate 50, and the electrode group 14 of the LED chip 10 is further electrically connected to the substrate 50. The substrate 50 is an element capable of transmitting electrical energy (such as a circuit board, a bracket, etc.), so the electrical energy can be supplied to the light-emitting device 1E through the substrate 50.

Please refer to FIGS. 7A and 7B, which are schematic diagrams of a light emitting device according to a sixth preferred embodiment of the present invention. In this embodiment, the translucent side structure 30 has different types of inclined sides 33. As shown in FIG. 7A, the light-emitting device 1F differs from other light-emitting devices at least in that the inclined side 33 of the side light-transmitting structure 30 is an inclined plane, so the inner inclined side 43 of the reflective structure 40 that is attached thereto is also flat. As shown in FIG. 7B, the light-emitting device 1F 'differs from other light-emitting devices at least in that the inclined side surface 33 of the light-transmitting structure 30 on the side is a convex curved surface, so the inner inclined side surface 43 of the reflective structure 40 attached thereto It is a relatively concave surface. Different types of inclined sides 33 can provide different light extraction effects, so that the overall light emitting efficiency of the light emitting device can be further adjusted.

Please refer to FIG. 8, which is a schematic diagram of a light emitting device according to a seventh preferred embodiment of the present invention. The light-emitting device 1G differs from other light-emitting devices at least in that the side transparent structure 30 only partially covers the vertical surface 13 of the LED chip 10, and the vertical surface 13 that is not covered by the side transparent structure 30 is covered by the reflective structure 40 Therefore, in this embodiment, the reflective structure 40 further includes an inner side surface 44. Preferably, the inner side surface 44 is attached to the vertical surface 13 and there is no gap between the two. Under this structure, different light extraction efficiency can be provided.

Please refer to FIG. 9, which is a schematic diagram of a light emitting device according to an eighth preferred embodiment of the present invention. The light-emitting device 1H is different from other light-emitting devices at least in that the side light-transmissive structure 30 has a semi-light-transmissive property, for example, it can be made of a light-transmissive resin containing a light-scattering particle, wherein one of the weights of the light-scattering particle Percent concentration is not more than 20%, not more than 10% or not more than 5%, in order to achieve the effect of semi-transmission. On the material, the light-scattering particles can be titanium dioxide (TiO2), boron nitride (BN), silicon dioxide (SiO2), aluminum oxide (Al2O3) or a combination thereof, and other oxides with similar functions can also be selected , Nitride or ceramic particles.

Please refer to FIG. 10, which is a schematic diagram of a light emitting device according to a ninth preferred embodiment of the present invention. The light-emitting device 1I differs from other light-emitting devices at least in that the reflective structure 40 covers the side surface 23 of the fluorescent structure 20 in addition to the inclined side surface 33. Therefore, the reflective structure 40 can block the LED chip 10 and the fluorescent layer 201 The light is transmitted from the side 23 to the outside, and then reflected back to the inside of the fluorescent structure 20, thereby reducing the lateral light, the light emitting device 1I can have a smaller viewing angle as a whole.

Please refer to FIG. 11, which is a schematic diagram of a light emitting device according to a tenth preferred embodiment of the present invention. The light-emitting device 1J differs from other light-emitting devices at least in that the fluorescent structure 20 is replaced by a light-transmitting layer 202 having the same or similar appearance. In other words, the light-emitting device 1J does not include the fluorescent layer 201. In this way, the light emitted by the LED chip 10 does not change its wavelength when passing through the light-transmitting layer 202, and can be used to make a CSP light-emitting device of monochromatic light such as red light, green light, blue light, infrared light, or ultraviolet light.

In the above-mentioned embodiments of the light-emitting devices 1A-1J, the technical content should be applicable to each other, and is not limited to the embodiments. For example, the upwardly inclined bottom surface 41 of the light-emitting device 1B, the fluorescent structure 20 of different structures of the light-emitting device 1C, the lens array layer 203 of the light-emitting device 1D, the substrate 50 of the light-emitting device 1E, and different types of side surfaces in each embodiment may The light-transmitting structure 33 or the reflective structures 40 of different types can be applied to the light-emitting devices of other embodiments (not shown). Moreover, in the light-emitting devices 1A-1J, the fluorescent structure 20 can be increased to a plurality of fluorescent layers 201 and light-transmitting layers 202 according to design requirements, and the stacking order can be adjusted appropriately, or appropriate in the fluorescent structure 20 Titanium dioxide (TiO ₂ ) and other materials are added to achieve the best overall effect.

Next, a method of manufacturing a light-emitting device according to a preferred embodiment of the present invention will be described. This method of manufacturing can produce a light-emitting device 1A-1J that is the same as or similar to the above-described embodiment. Therefore, the technical content of the manufacturing method and the light-emitting device 1A-1J The technical content can be referred to each other. The manufacturing method may include at least three steps: pressing the flip-chip LED chip to the fluorescent film or the light-transmitting film; forming the side light-transmitting structure with inclined sides; and performing the inclined side of the side light-transmitting structure Cladding to form a reflective structure with concave curved surface, convex curved surface or inclined plane. The technical content of the manufacturing method is explained in order as follows.

Please refer to FIGS. 12A to 18, which are schematic diagrams of steps of the manufacturing method according to the first preferred embodiment of the present invention. As shown in FIG. 12A, a diaphragm 20 'is first provided. The diaphragm 20' may be a transparent diaphragm, a semi-transparent diaphragm, or a fluorescent diaphragm, etc., which have similar characteristics, and are implemented in this manufacturing method In the example, a fluorescent film is used as an example of the film 20 '(that is, the fluorescent film 20') to explain the subsequent process steps. Those with ordinary knowledge in the art will know that the subsequent process steps are also applicable to the aforementioned transparent film or semi-transparent film; etc. Preferably, the fluorescent film 20 'may include a fluorescent layer 201 and a light-transmitting layer 202 And has a first surface 21 'and a second surface 22'; then, a transparent adhesive 300 (such as silicone) is formed on the second surface 22 'of the fluorescent film 20', which can be transparently bonded The glue 300 can be formed on the fluorescent layer 201 by a process such as spray caoting, spin coating, or printing; or, the transparent adhesive 300 can be formed on the fluorescent layer according to design requirements. The first surface 21 'of the optical film 20' may correspond to other embodiments of the manufacturing method in this case. For detailed description, refer to the technical content described later.

It should be added that the fluorescent film 20 ′ can be manufactured in the following steps: (1) The manufacturing material of the fluorescent layer 201 is formed in a separate place by a process such as spray coating, spin coating, printing, or molding (molding) On the type film (not shown), the fluorescent layer 201 is formed after curing. (2) The manufacturing material of the light-transmitting layer 202 is formed on the fluorescent layer 201 by processes such as spray coating, spin coating, printing, or molding. After curing, a light-transmitting layer 202 is formed. (3) The cured fluorescent layer 201 and the light-transmitting layer 202 are removed from the release film to complete the production of the fluorescent film 20 '. Preferably, the fluorescent layer 201 may be formed by the technology disclosed in the US Patent Application Publication No. US2010 / 0119839 (corresponding to the Taiwan Patent of Certificate No. I508331), that is, one or more layers of fluorescent materials and Light-transmitting materials are separately deposited to form the fluorescent layer 201. The fluorescent layer 201 formed by this technique may have a multilayer structure, including at least one light-transmitting portion and at least one fluorescent portion (not shown), stacked and staggered with each other.

As shown in FIG. 12B, then, forming an LED chip array on a release film 60, the steps include: first providing a release film 60, such as a thermal debonding film, an ultraviolet debonding film, etc., and the release film 60 It can also be placed on a supporting structure, such as a silicon substrate or a glass substrate (not shown); then, a plurality of flip-chip LED chips 10 are placed on the release film 60 at intervals to form an LED chip array 100 . Preferably, the electrode group 14 of each LED chip 10 can be sunk into the release film 60, so that the lower surface 12 of the LED chip 10 is covered by the release film 60, so as to prevent the electrode 14 from being contaminated in the subsequent manufacturing process.

As shown in FIG. 13, then, preferably, the LED chip array 100 and the fluorescent film 20 ′ can be placed in a chamber, and the LED chip array can be placed through a film bonding device (not shown) 100 and the fluorescent film 20 'are separated from each other and oppositely arranged, wherein the upper surface 11 of the LED chip 10 faces the second surface 22' of the fluorescent film 20 'where the light-transmissive adhesive 300 has been provided, so that The surface 11 and the second surface 22 'can be further bonded. Next, the chamber is evacuated, so that the subsequent pressing process can be performed in a vacuum environment to reduce defects such as air bubbles. The vacuum degree is preferably less than 50 Torr, and preferably less than 10 Torr, preferably less than 1 Torr. As such, there is only a trace of thin gas between the LED chip array 100 and the fluorescent film 20 '. Preferably, this pressing process can be achieved by the vacuum membrane bonding device and technology disclosed in the Taiwan Patent Application No. 106101525, that is, using a device with a vacuum chamber and a pressing mechanism, Attach the diaphragm to the object to be attached in a vacuum environment.

As shown in FIG. 14, the LED chip array 100 is pressed onto the fluorescent film 20 ′. Since the light-permeable adhesive 300 has fluidity, it is located on the upper surface 11 of the LED chip 10 during the pressing process The light-transmissive adhesive 300 between the second surface 22 'of the fluorescent film 20' will be further squeezed around the LED chip.

As shown in FIG. 15, the light-permeable adhesive 300 that is squeezed to flow toward the vertical surface 13 of the LED chip 10 further covers the vertical surface 13 of the LED chip 10 and forms a concave curved surface 33, so that a plurality of The side having the inclined side 33 can transmit the light structure 30. In addition, the transparent adhesive 300 between the upper surface 11 of the LED chip 10 and the second surface 22 'of the fluorescent film 20' can form an adhesive layer 90; then, the transparent adhesive 300 is cured, such as heating and baking Make The light-transmissive adhesive 300 is partially cured to complete the bonding of the LED chip 10 and the fluorescent film 20 ', and the side light-transmissive structure 30 and the adhesive layer 90 are simultaneously formed. During the lamination process, different curved surface shapes of the inclined sides 33 can be obtained by controlling the process factors including: control of the amount of light-transmitting adhesive 300, selection of the viscosity of light-transmitting adhesive 300, The amount of pressing force, the change of the surface energy characteristics of the LED chip 10 facade 13 (for example, plasma surface treatment to change the surface characteristics) and curing conditions, etc. In addition, controlling these process factors can also make the side transparent The light structure 30 only partially covers the elevation 13 of the LED chip 10; controlling these process factors can also obtain adhesive layers 90 of different thicknesses, for example, the thickness of the adhesive layer 90 can be about 1 micron, about 5 microns, about 10 microns, about 20 microns or more, so that the fluorescent film 20 ′ and the LED chip 10 can be separated by a distance.

As shown in FIG. 16, after the light-permeable adhesive 300 is cured, the bonded LED chip array 100 and the fluorescent film 20 'are removed from the chamber, and the release film 60 is removed.

In addition, the steps shown in FIGS. 12A to 16 above can also be achieved by the following methods. First, a diaphragm 20 'is provided; then, by spraying or printing, a transparent adhesive 300 (such as silicone) is evenly arranged on the second surface 22' of the diaphragm 20 '; then a plurality of LEDs The chip 10 is disposed on the diaphragm 20 'via a light-transmissive adhesive 300 to form an LED chip array, wherein the upper surface 11 of the LED chip 10 faces the second surface 22' of the diaphragm 20 '. This step can be used A suitable method, for example, using an arranging machine, sequentially arranges the LED chips 10 one by one onto the diaphragm 20 '; then, a vacuum diaphragm bonding device may also be used to press the LED chip array 100 into the light-transmissive adhesive 300; and then curing the light-transmitting adhesive 300 to complete the bonding of the LED chip 10 and the membrane 20 ', and at the same time form a side light-transmitting structure 30 and an adhesive layer 90.

As shown in FIG. 17, the reflective structure 40 is then formed. Specific methods for forming the reflective structure 40 include at least two types of molding and dispensing. When the molding is adopted, the LED chip array 100 and the fluorescent film 20 'will be placed in a mold (not shown), and then the manufacturing material of the reflective structure 40 is injected into the mold to make it cover the side light-transmitting structure 30 inclined side 33; when the manufacturing material is cured, the reflective structure 40 can be formed.

When dispensing, the above-mentioned mold is not required, the manufacturing material of the reflective structure 40 will be directly injected into the gap between the LED chips 10, and then the manufacturing material will gradually thicken to cover the tilt of the side light-transmitting structure 30 The side surface 33, preferably, the injected manufacturing material does not exceed the lower surface 12 of the LED chip 10. When the manufacturing material of the reflective structure 40 solidifies, it will shrink in volume, or when the injected manufacturing material is slightly reduced, the bottom surface 41 of the formed reflective structure 40 will form a concave curved surface, so that it can be obtained as shown in FIG. 3A In the light-emitting device 1B, the reflective structure 40 has a bottom surface 41 inclined upward.

After the reflective structure 40 is formed and cured completely, a plurality of light-emitting devices 1A (or other types of light-emitting devices) can be obtained, and the light-emitting devices 1A are connected to each other. Next, as shown in FIG. 18, a cutting step is taken to separate the connected light-emitting devices 1A, thereby obtaining light-emitting devices 1A separated from each other. If the separated light-emitting device 1A is provided on a substrate by reflow soldering or eutectic bonding, and is electrically connected to the substrate, the manufactured light-emitting device can correspond to the light-emitting device 1E shown in FIG. 6.

In addition, please refer to FIG. 12A again. When the transparent adhesive 300 is placed on the fluorescent film 20 ′, if the fluorescent film 20 ′ is turned upside down, so that the first surface 21 ′ faces upward, The transparent adhesive 300 is disposed on the first surface 21 'of the fluorescent film 20'. In the subsequent process steps shown in FIGS. 13 to 18, the first step of the fluorescent film 20 'is also maintained. With a surface 21 'facing upward, the light-emitting device manufactured in this way can correspond to the light-emitting device 1C shown in FIG. 4A.

If the fluorescent film 20 'is formed, the fluorescent film 20' includes a fluorescent layer 201 and two transparent layers 202, and the fluorescent layer 201 is sandwiched between the two transparent layers 202. The manufactured light emitting device can correspond to the light emitting device 1C 'shown in FIG. 4B. If the fluorescent film 20 'is formed so that the fluorescent film 20' includes only a fluorescent layer 201 and no transparent layer 202, the light-emitting device manufactured in this way can correspond to that shown in FIG. 4C Light-emitting device 1C ". If the fluorescent film 20 'is formed, the fluorescent film 20' includes only a light-transmitting layer 202, and does not include the fluorescent layer 201, so that the manufactured light-emitting device can correspond to the first The light-emitting device 1J shown in FIG. 11. If the fluorescent film 20 'is formed, the fluorescent film 20' includes a fluorescent layer 201 and a lens array layer 203, wherein the lens array layer 203 can be molded, etc. The light-emitting device manufactured in this way can correspond to the light-emitting device 1D shown in FIG. 5.

If in the step of forming the side light-transmitting structure 30, as described in the process steps of FIG. 15, control these process factors so that the side light-transmitting structure 30 only partially covers the vertical surface 13 of the LED chip 10, thus manufactured Can correspond to the light-emitting device 1G shown in FIG. 8. In addition, if in the step of forming the side light-transmitting structure 30, the manufacturing material of the side light-transmitting structure 30 includes a light-scattering particle with a concentration of not more than 20% by weight, so that the side light-transmitting structure 30 may have half With the light-transmitting property, the manufactured light-emitting device can correspond to the light-emitting device 1H shown in FIG. 9.

If the process steps shown in FIG. 16 are completed, followed by a cutting process (see the technical content shown in FIG. 18), the fluorescent film 20 'and the light-transmitting structure 30 are separated from each other to form a plurality of light-emitting structures Each of these light-emitting structures includes a single LED chip 10, a single fluorescent structure 20 (the fluorescent film 20 'after being cut and separated can form a fluorescent structure 20), and a single side light-transmitting structure 30; It is arranged on a release film (not shown) to form an array of light-emitting structures, and the light-emitting structures are spaced apart from each other. Then, the process steps of forming the reflective structure 40 shown in FIG. 17 are performed. At this time, the reflective structure 40 will simultaneously cover the side surface 23 of the fluorescent structure 20 and the inclined side surface 33 of the side transparent structure 30; In the process steps shown, the reflective structure 40 is cut to separate a plurality of light emitting devices from each other, and the light emitting device manufactured in this way can correspond to the light emitting device 1I shown in FIG. 10.

The above is the description of the manufacturing method according to the first preferred embodiment of the present invention. Next, a manufacturing method according to a second preferred embodiment of the present invention will be described, which is partially the same as or similar to the foregoing manufacturing method, so the description of these parts will be appropriately omitted.

Please refer to FIG. 19 to FIG. 21, which are schematic diagrams of the steps of the manufacturing method according to the second preferred embodiment of the present invention. As shown in FIG. 19, first provide a die 20 ', here will take the fluorescent film as an example (ie fluorescent film 20'); and then by a method such as dispensing or printing, a transparent adhesive The glue 300 (such as silicone glue) is respectively disposed on the second surface 22 'of the fluorescent film 20'. The light-transmissive adhesives 300 are separated from each other by a specific distance and arranged in an array.

As shown in FIGS. 20A and 20B, a plurality of LED chips 10 are then pressed onto the fluorescent film 20 ′ through the light-transmissive adhesive 300, wherein the upper surface 11 of the LED chip 10 faces the fluorescent film The second surface 22 'of the wafer 20', and each of the LED chips 10 is aligned with each of the array of transparent adhesive 300. In this pressing step, as shown in FIG. 20A, the LED chip 10 is first placed on the release film 60 to form an LED chip array 100, and then the LED chip array 100 is pressed onto the fluorescent film 20 ' In addition, as shown in FIG. 20B, this step can also use an arranging machine to sequentially arrange the LED chips 10 one by one onto the array of transparent adhesive 300 of the fluorescent film 20 ', and then press them together.

As shown in FIG. 21, during the bonding process, the light-transmissive adhesive 300 between the upper surface 11 of the LED chip 10 and the second surface 22 'of the fluorescent film 20' is pressed to the LED The four sides of the chip and further cover the vertical surface 13 of the LED chip 10 to form an inclined side surface, thereby forming a plurality of side transparent structures 30 with inclined side surfaces 33, which are located on the upper surface 11 of the LED chip 10 and the fluorescent light The transparent adhesive 300 between the second surface 22 'of the diaphragm 20' can form an adhesive layer 90; and then the transparent adhesive 300 is cured to complete the bonding of the LED chip 10 and the diaphragm 20 '. At the same time, the side light-transmitting structure 30 and the adhesive layer 90 are simultaneously formed.

After the pressing is completed, the process steps shown in Figures 17 and 18 and related technical content can be continued to form the reflective structure 40 (Figure 17) before cutting to separate the connected light-emitting devices (Figure 18) In this way, a plurality of light-emitting devices 1A (or other types of light-emitting devices) can be obtained.

In addition, referring to FIGS. 22A, 22B, and 22C, it is also possible to assist in forming different types of inclined side surfaces 33 by setting a wall portion 70. As shown in the cross-sectional view shown in FIG. 22A, a plurality of surrounding wall portions 70 are first provided on the fluorescent film 20 '. The surrounding wall portions 70 may be a photoresist structure, a metal structure, or a structure formed by other organic or inorganic materials. It can be produced through semiconductor manufacturing process or micro-electromechanical manufacturing process. The wall portions 70 are separated from each other by a distance in the cross-sectional view, but they can be distributed in a grid shape as a whole (not shown); and then on the second surface 22 'of the fluorescent film 20' between the two wall portions 70 A light-transmissive adhesive 300 is provided; then, the LED chip 10 is pressed onto the fluorescent film 20 '. As shown in FIG. 22B, when the light-permeable adhesive 300 is squeezed and flows to the wall portion 70 during the pressing process, its flow will be hindered by the wall portion 70, and eventually the light-permeable adhesive 300 gathers due to aggregation The arching forms an inclined side surface 33 with a convex curved surface. The light-emitting device fabricated in this way can correspond to the light-emitting device 1F shown in FIG. 7B, and the outer curvature of the convex curved surface can be bonded by light transmission. The installation volume of the glue 300 and the geometric dimensions of the wall portion 70 are further controlled. In addition, as shown in FIG. 22C, if the installation volume of the light-transmissive adhesive 300 is further reduced, an inclined side surface 33 with an inclined plane can be obtained, and the light-emitting device fabricated in this way can correspond to that shown in FIG. 7A之 光 装置 1F。 Light-emitting device 1F.

The above is the description of the manufacturing method according to the second preferred embodiment of the present invention. In the first preferred embodiment and the second preferred embodiment, both the adhesive layer 90 and the side light-transmitting structure 30 are formed at the same time. Next, the manufacturing method according to the third preferred embodiment of the present invention will be described, in which the adhesive layer 90 and the side light-transmitting structure 30 are formed separately. Other parts have the same or similar parts as the aforementioned manufacturing method, so the description of these parts will be omitted appropriately.

Please refer to FIG. 23 to FIG. 24, which are schematic diagrams of the steps of the manufacturing method according to the third preferred embodiment of the present invention. As shown in FIG. 23, an adhesive layer 900 is first formed on the second surface 22 'of the fluorescent film 20'; then, a plurality of LED chips 10 are pressed onto the adhesive layer 900 on the fluorescent film 20 '. The adhesive layer 900 provided on the second surface 22 'of the fluorescent film 20' has a smaller thickness or a higher viscosity. Therefore, the adhesive layer 900 is not easily squeezed during the pressing process All around the LED chip 10 to form a light-transmitting structure 30 on the side.

Next, as shown in FIG. 24, a transparent material, such as a transparent adhesive 300, is injected into the gap between the LED chips 10, wherein the transparent adhesive 300 has a low viscosity and good Because of its fluidity, it can climb upward through the surface adhesion between the LED chip 10 and the vertical surface 13, and finally partially or completely cover the vertical surface 13. In this way, through the arrangement of the light-transmissive adhesive 300, the side light-transmissive structure 30 can be formed, and has an inclined side 33. Next, as shown in FIG. 25, a reflective structure 40 is formed to cover the inclined side surface 33 (refer to the description of the process steps shown in FIG. 17); finally, as shown in FIG. 26, cutting is performed to connect each other to emit light After the devices are separated, a plurality of light-emitting devices 1A (or other types of light-emitting devices) can be obtained. The adhesive layer 900 can form the adhesive layer 90 corresponding to the light-emitting device 1A shown in FIG. 2, and the transparent adhesive 300 can form the side transparent structure 30 corresponding to the light-emitting device 1A.

In summary, the manufacturing method of the light-emitting device in this embodiment can manufacture various CSP light-emitting devices with a wafer reflective structure with inclined sides, and the manufacturing method is suitable for batch-type mass production to reduce production costs.

The above-mentioned embodiments are only used to illustrate the implementation of the present invention and to explain the technical features of the present invention, but not to limit the scope of protection of the present invention. Any changes or equivalence arrangements that can be easily completed by those familiar with this technology belong to the scope claimed by the present invention, and the scope of protection of the rights of the present invention shall be subject to the scope of patent application.

Claims (33)

A light-emitting device includes: a flip chip LED chip having an upper surface, a lower surface opposite to the upper surface, a vertical surface and an electrode group, the vertical surface is formed between the upper surface and the lower surface, The electrode set is disposed on the lower surface; a fluorescent structure includes a first surface, a second surface opposite to the first surface, and a side surface, the side surface is formed between the first surface and the second surface , And the second surface is disposed on the flip-chip LED chip and is larger than the upper surface; an adhesive layer is disposed between the upper surface of the flip-chip LED chip and the second surface of the fluorescent structure A side light-transmitting structure, which is arranged outside the vertical surface of the flip-chip LED chip and below the second surface of the fluorescent structure, and includes an inclined side surface and a side surface connected to each other, the side surface being transparent The side surface of the light structure is attached to the vertical surface of the flip-chip LED chip, the inclined side surface is inclined with respect to the second surface and the vertical surface, and is connected to the vertical surface; and a reflective structure covering the The inclined side of the light-transmitting structure of the side. The light-emitting device according to claim 1, wherein the fluorescent structure is a fluorescent layer or a multilayer structure, wherein the multilayer structure includes at least a fluorescent portion and at least a light-transmitting portion. The light-emitting device according to claim 1, wherein the fluorescent structure includes a fluorescent layer and a lens array layer, and the lens array layer is formed on the fluorescent layer. The light-emitting device according to claim 1, wherein the inclined side surface of the side light-transmitting structure is a flat surface, a convex surface or a concave surface. The light-emitting device according to any one of claims 1 to 4, wherein the side light-transmitting structure completely covers the vertical surface of the flip chip LED chip. The light-emitting device according to any one of claims 1 to 4, wherein the side light-transmitting structure partially covers the vertical surface of the flip chip LED chip. The light-emitting device according to claim 1, wherein the light-transmitting structure on the side is made of a material containing a light-transmissive glue resin. The light-emitting device according to claim 1, wherein the side light-transmitting structure is made of a material containing a light-transmitting resin, and the light-transmitting resin contains a light with a concentration not greater than 20% Scattering particles. The light-emitting device according to claim 7 or 8, wherein the light-transmissive resin is a low-refractive index silicone rubber. The light-emitting device according to claim 7 or 8, wherein the light-transmissive resin is polyphthalamide, polycyclohexanedimethylene terephthalate, epoxy resin, or silicone; the light scattering Sexual particles are titanium dioxide, boron nitride, silicon dioxide or aluminum oxide. The light emitting device according to claim 1, wherein the reflective structure further covers the side surface of the fluorescent structure. The light emitting device according to claim 1, wherein the reflective structure is disposed below the second surface of the fluorescent structure. The light emitting device according to claim 1, wherein a bottom surface of the reflective structure is inclined upward. The light-emitting device according to any one of claims 11 to 13, wherein the reflective structure is made of a material containing a light-transmitting resin, the light-transmitting resin containing a concentration of not less than 20 by weight % Of light-scattering particles; wherein the light-transmissive resin is polyphthalamide, polycyclohexanedimethylene terephthalate, epoxy resin, or silicone rubber; the light-scattering particles are titanium dioxide, Boron nitride, silicon dioxide or aluminum oxide. The light-emitting device according to any one of claims 1 to 4, further comprising a substrate, the LED chip and the reflective structure are disposed on the substrate, and the LED chip is electrically connected to the substrate. A light emitting device includes: a flip chip LED chip, having an upper surface, a lower surface opposite to the upper surface, a vertical surface and an electrode group, the vertical surface is formed between the upper surface and the lower surface, The electrode set is disposed on the lower surface; a light-transmitting layer includes a first surface, a second surface opposite to the first surface, and a side surface, the side surface is formed between the first surface and the second surface , And the second surface is disposed on the upper surface of the flip-chip LED chip and is larger than the upper surface; a side surface can be a light-transmitting structure, which is disposed on the vertical surface of the flip-chip LED chip and the transparent Between the second surfaces, and including an inclined side surface and a side surface connected to each other, the side surface of the side light transmissive structure is attached to the vertical surface of the flip-chip LED chip, the inclined side surface is opposite to the first The two surfaces and the vertical surface are inclined and connected to the vertical surface; and a reflective structure covering the inclined side surface of the side light-transmitting structure. A method for manufacturing a light-emitting device includes forming a light-transmissive adhesive to a surface of a diaphragm; pressing a plurality of flip-chip LED chips onto the diaphragm, wherein one of the flip-chip LED chips The surface faces the surface of the diaphragm on which the light-transmissive adhesive has been provided; the light-transmissive adhesive is pressed between an elevation of the flip-chip LED chips and the surface of the diaphragm, To form a plurality of light-transmitting structures on the sides; curing the light-transmitting structures on the sides, wherein each of the light-transmitting structures on the sides includes an inclined side that is inclined with respect to the surface and the elevation; forming a plurality of reflections Structures to cover the inclined sides of the light-transmitting structures on the sides; and cut the reflective structures, respectively. The method for manufacturing a light-emitting device according to claim 17, wherein forming the light-transmissive adhesive to the surface of the diaphragm further comprises: continuously forming the light-transmittable adhesive to the surface of the diaphragm. The method for manufacturing a light-emitting device according to claim 17, wherein forming the light-transmissive adhesive to the surface of the diaphragm further comprises: separately forming the light-transmittable adhesive to the surface of the diaphragm. The method for manufacturing a light-emitting device according to claim 19, wherein a plurality of wall portions are formed on the surface of the diaphragm, and the light-transmissive adhesive is formed in the wall portions; When squeezed, the light-permeable adhesive contacts the walls and is blocked from flowing to form a bump. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein the pressing of the flip-chip LED chips to the diaphragm further comprises: first disposing the flip-chip LED chips on a base Material, and then pressed against the diaphragm. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein the elevation of the flip-chip LED chips and / or before pressing the flip-chip LED chips to the diaphragm The surface of the diaphragm is plasma-treated. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein pressing the flip chip LED wafers to the diaphragm is pressed in a vacuum chamber. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein the light-permeable adhesive is pressed between the vertical surface of the flip-chip LED chips and the surface of the diaphragm The transparent adhesive glue completely covers the elevation of the flip-chip LED chips. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein the light-permeable adhesive is pressed between the vertical surface of the flip-chip LED chips and the surface of the diaphragm The transparent adhesive glue partially covers the elevation of the flip-chip LED chips. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein forming the reflective structures further includes injecting a relatively small amount of manufacturing materials of the reflective structures to form the concave surface having a plurality of concave shapes Equal reflection structure. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein when cutting the reflective structures, the diaphragm is cut together. The method for manufacturing a light-emitting device according to any one of claims 17 to 20, wherein before forming the reflective structures, the method further includes: cutting the diaphragm to form a plurality of light-emitting structures, wherein each of the light-emitting structures A light-transmitting structure including the side, a fluorescent structure or a light-transmitting layer; and exposing the sides of the light-emitting structures at a distance from each other; wherein, when the reflection structures are formed, the reflections The structure further covers the sides of the light-emitting structures, respectively. The method for manufacturing a light emitting device according to any one of claims 17 to 20, further comprising disposing the light emitting device on a substrate, and the flip chip LED chips are electrically connected to the substrate. A method for manufacturing a light-emitting device, comprising: disposing a plurality of flip-chip LED chips on a surface of a diaphragm, wherein one of the upper surfaces of the flip-chip LED chips faces the surface of the diaphragm; A transparent adhesive is injected between the vertical surfaces of the LED chip and the surface of the diaphragm to form a plurality of side transparent structures, wherein each of the side transparent structures includes The surface and the vertical surface are inclined inclined sides; curing the side light-transmitting structures; forming a plurality of reflective structures to respectively cover the inclined side surfaces of the side light-transmitting structures; and cutting the reflective structures . The method of manufacturing a light-emitting device according to claim 30, wherein the surface of the flip-chip LED chips and / or the surface of the diaphragm are plasma-coated surfaces before the transparent adhesive is filled deal with. The method for manufacturing a light-emitting device according to claim 30 or 31, wherein when the reflective structures are cut, the diaphragm is cut together. The method for manufacturing a light-emitting device according to claim 30 or 31, wherein before forming the reflective structures, the method further comprises: cutting the diaphragm to form a plurality of light-emitting structures, wherein each of the light-emitting structures includes the The light-transmitting structure on the side may further include a fluorescent structure or a light-transmitting layer; and the sides of the light-emitting structures are exposed and separated from each other by a distance; wherein, when the reflective structures are formed, the reflective structures are more Cover the sides of the light-emitting structures respectively.