TW201316558A - Method of packaging light emitting diode - Google Patents

Method of packaging light emitting diode Download PDF

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Publication number
TW201316558A
TW201316558A TW100138332A TW100138332A TW201316558A TW 201316558 A TW201316558 A TW 201316558A TW 100138332 A TW100138332 A TW 100138332A TW 100138332 A TW100138332 A TW 100138332A TW 201316558 A TW201316558 A TW 201316558A
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emitting diode
reflective
light emitting
package substrate
film
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TW100138332A
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Chinese (zh)
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TWI455368B (en
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Yau-Tzu Jang
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Advanced Optoelectronic Tech
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Abstract

A method of packaging a light emitting diode includes: providing a substrate; etching the top surface of the substrate to form a plurality of reflective cup and defining several conductive frames in the reflectors, each conductive frame including a first electrode and a second electrode isolated from each other; forming a light emitting diode chip on each conductive frame, the light emitting being electrically connected to the first electrode and second electrode; setting a plurality of jointing blocks on the top surface of the substrate between each two neighboring reflectors; arranging a dual brightness enhancement film covering the plurality of jointing blocks; sintering the dual brightness enhancement film and the jointing blocks, by low temperature co-firing, to joint the dual brightness enhancement film with the substrate; cutting the substrate into dices each of which is a single light emitting diode structures.

Description

發光二極體的封裝方法Light-emitting diode packaging method

本發明涉及一種半導體的封裝方法,尤其涉及一種發光二極體的封裝方法。The present invention relates to a method of packaging a semiconductor, and more particularly to a method of packaging a light emitting diode.

發光二極體(Light Emitting Diode,LED)是一種可將電轉換成光的半導體元件,憑藉其發光效率高、體積小、重量輕、環保等優點,已被廣泛地應用到當前的各個領域當中。Light Emitting Diode (LED) is a kind of semiconductor component that can convert electricity into light. It has been widely used in various fields because of its high luminous efficiency, small size, light weight and environmental protection. .

為提升發光元件的出光效率,通常將一反射型偏光增亮膜片(Dual Brightness Enhancement Film,DBEF)設置在該封裝結構的出光面上,以產生具有相同偏振方向的偏振光。所述反射型偏光片是採用多層光學薄膜技術的反射型增亮膜,其設置於背光源及下偏片之間,將被傳統吸收型偏光片吸收的光線加以迴圈利用,從而提升光學裝置的出光強度。In order to improve the light-emitting efficiency of the light-emitting element, a reflective brightness enhancing brightness enhancement film (DBEF) is usually disposed on the light-emitting surface of the package structure to generate polarized light having the same polarization direction. The reflective polarizer is a reflective brightness enhancement film using a multilayer optical film technology, which is disposed between the backlight and the lower polarizer, and uses the light absorbed by the conventional absorption polarizer to be looped, thereby lifting the optical device. The intensity of light output.

然而,對於該反射型偏光片和所述發光二極體的結合,若採取直接膠黏的方式,所形成的結構連接不夠穩固,同時長時間連接膠的老化將影響發光二極體的出光效果;若在較高的溫度環境下直接結合該反射型偏光增亮膜片和發光二極體,則會對整個發光二極體的結構造成損壞,尤其是由膠體材料形成的封裝層受到破壞,進而影響該發光二極體的出光效果,故,有待進一步改善。However, for the combination of the reflective polarizer and the light-emitting diode, if the direct adhesive method is adopted, the formed structural connection is not stable enough, and the aging of the long-term adhesive will affect the light-emitting effect of the light-emitting diode. If the reflective polarizing brightening film and the light emitting diode are directly combined under a high temperature environment, the structure of the entire light emitting diode may be damaged, especially the sealing layer formed by the colloidal material is damaged. Further, the light-emitting effect of the light-emitting diode is affected, so that further improvement is required.

有鑒於此,有必要提供一種便於發光二極體和反射型偏光增亮膜片連接的發光二極體的封裝方法。In view of the above, it is necessary to provide a method of packaging a light-emitting diode that facilitates connection of a light-emitting diode and a reflective polarizing film.

一種發光二極體封裝方法,其包括步驟:提供一封裝基板;蝕刻所述封裝基板的上表面形成複數反射杯並在該反射杯內設置複數導電架,每一導電架包括相互間隔的第一電極和第二電極;在該導電架上形成一發光二極體元件,所述發光二極體元件與該第一電極及第二電極形成電性連接;在該封裝基板的各反射杯之間的上表面上設置複數連接塊;在該複數連接塊上設置反射型偏光增亮膜片;低溫共燒所述反射型偏光增亮膜片及連接塊,以藉由連接塊將反射型偏光增亮膜片結合在該封裝基板上;及切割所述封裝基板以形成多個發光二極體封裝元件。A method for packaging a light emitting diode, comprising the steps of: providing a package substrate; etching an upper surface of the package substrate to form a plurality of reflective cups; and providing a plurality of conductive frames in the reflective cup, each of the conductive frames comprising first spaced apart from each other An electrode and a second electrode; a light emitting diode element is formed on the conductive frame, and the light emitting diode element is electrically connected to the first electrode and the second electrode; between the reflective cups of the package substrate a plurality of connecting blocks are disposed on the upper surface; a reflective polarizing brightening film is disposed on the plurality of connecting blocks; and the reflective polarizing brightening film and the connecting block are co-fired at a low temperature to increase the reflective polarization by the connecting block a bright film is bonded on the package substrate; and the package substrate is cut to form a plurality of light emitting diode package components.

與先前技術相比,該發光二極體在該反射部的上表面設置複數連接塊,將反射型偏光增亮膜片設置在LED的出光面上,藉由低溫共燒的方式,使該封裝基板對應反射部的區域和反射型偏光增亮膜片緊密結合在一起,同時該封裝基板對應該螢光層的區域和反射式偏光增亮膜片相互間隔,從而既保證了所述封裝基板和所述反射型偏光增亮膜片的穩固連接,同時也避免了該發光二極體在共燒的制程中受到破壞。Compared with the prior art, the light-emitting diode has a plurality of connecting blocks on the upper surface of the reflecting portion, and a reflective polarizing brightness-increasing film is disposed on the light-emitting surface of the LED, and the package is made by low-temperature co-firing. The region corresponding to the reflecting portion of the substrate and the reflective polarizing brightness enhancing film are tightly combined, and the region of the packaging substrate corresponding to the fluorescent layer and the reflective polarizing brightness enhancing film are spaced apart from each other, thereby ensuring the package substrate and The stable connection of the reflective polarizing brightening film also avoids the destruction of the light emitting diode in the co-firing process.

下面參照附圖,結合具體實施例對本發明作進一步的描述。The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

以下將結合附圖對本發明作進一步的詳細說明。The invention will be further described in detail below with reference to the accompanying drawings.

本發明第一實施例提供的發光二極體的封裝方法,大致包括如下流程:The method for packaging a light-emitting diode according to the first embodiment of the present invention generally includes the following processes:

提供一封裝基板;Providing a package substrate;

蝕刻所述封裝基板的上表面形成複數反射杯並在該反射杯內設置複數導電架,每一導電架包括相互間隔的第一電極和第二電極;Etching the upper surface of the package substrate to form a plurality of reflective cups and disposing a plurality of conductive frames in the reflective cup, each of the conductive frames comprising first and second electrodes spaced apart from each other;

在該上電極上形成一發光二極體元件,所述發光二極體元件與該第一電極及第二電極形成電性連接;Forming a light emitting diode element on the upper electrode, the light emitting diode element being electrically connected to the first electrode and the second electrode;

在所述各發光二極體元件上形成一螢光層以覆蓋該發光二極體元件;Forming a phosphor layer on each of the light emitting diode elements to cover the light emitting diode element;

在該封裝基板的各反射杯之間的上表面上設置複數連接塊;Providing a plurality of connection blocks on an upper surface between the reflective cups of the package substrate;

在該複數連接塊上設置反射型偏光增亮膜片;Providing a reflective polarizing brightening film on the plurality of connecting blocks;

低溫共燒所述反射型偏光增亮膜片及連接塊,以藉由連接塊將反射型偏光增亮膜片結合在該封裝基板上;及Covalently firing the reflective polarizing brightness enhancing film and the connecting block at low temperature to bond the reflective polarizing brightness enhancing film to the package substrate through the connecting block;

切割所述封裝基板以形成多個發光二極體封裝元件。The package substrate is diced to form a plurality of light emitting diode package components.

下面結合圖1至圖5對該流程作詳細說明。The flow will be described in detail below with reference to FIGS. 1 to 5.

首先請參見圖1,提供一封裝基板10,該封裝基板10包括一第一表面11和一第二表面12。該所述封裝基板10為矽基板、塑膠基板或陶瓷基板。該封裝基板10還可由如下材料中的一種或多種製成:砷化鎵(GaAs)、氧化鋅(ZnO)及磷化銦(InP)等。Referring first to FIG. 1, a package substrate 10 is provided. The package substrate 10 includes a first surface 11 and a second surface 12. The package substrate 10 is a germanium substrate, a plastic substrate or a ceramic substrate. The package substrate 10 may also be made of one or more of the following materials: gallium arsenide (GaAs), zinc oxide (ZnO), and indium phosphide (InP).

藉由光微影及蝕刻技術對所述封裝基板10進行鑿刻以使封裝基板10分成複數個反射杯13,每一反射杯13包括一承載部131和自該承載部131向上延伸一體形成的反射部132。所述承載部131呈一規則的平板狀。所述反射部132圍成一收容空間133用以收容所述發光二極體元件30。該反射部132的下表面與所述承載部131的部分上表面相貼合,該收容空間133靠近第一表面11的一端的直徑大於靠近該承載部131的一端的直徑。The package substrate 10 is chiseled by photolithography and etching techniques to divide the package substrate 10 into a plurality of reflective cups 13. Each of the reflective cups 13 includes a carrying portion 131 and an upwardly extending body extending from the carrying portion 131. The reflecting portion 132. The carrying portion 131 has a regular flat shape. The reflective portion 132 defines a receiving space 133 for receiving the LED component 30. The lower surface of the reflecting portion 132 is in contact with a portion of the upper surface of the receiving portion 131. The diameter of one end of the receiving space 133 adjacent to the first surface 11 is larger than the diameter of one end of the receiving portion 131.

在每一反射杯13內設置一導電架20,該導電架20包括相互間隔的第一電極21和第二電極22。該第一電極21和第二電極22形成電性連接且均外露於該收容空間133內。該第一電極21和第二電極22用於與後續與待封裝的發光二極體元件30的正、負極相連,以從外界獲取電能並將電能提供給該發光二極體元件30。A conductive frame 20 is disposed in each of the reflective cups 13, and the conductive frame 20 includes first and second electrodes 21 and 22 spaced apart from each other. The first electrode 21 and the second electrode 22 are electrically connected and exposed in the receiving space 133. The first electrode 21 and the second electrode 22 are connected to the positive and negative electrodes of the light-emitting diode element 30 to be packaged later to obtain electric energy from the outside and supply the electric energy to the light-emitting diode element 30.

請參見圖2,在該第一電極21上設置一發光二極體元件30,本實施例中,所述發光二極體元件30藉由覆晶的方式與第一電極21和第二電極22形成電性連接,可以理解的是,也可藉由打線的方式形成電性連接。優選地,本實施例中採用的發光二極體元件30為發光二極體晶粒。Referring to FIG. 2, a light emitting diode element 30 is disposed on the first electrode 21. In the embodiment, the light emitting diode element 30 is flip chip bonded to the first electrode 21 and the second electrode 22 Forming an electrical connection, it can be understood that the electrical connection can also be formed by wire bonding. Preferably, the light emitting diode element 30 used in the embodiment is a light emitting diode die.

請參見圖3,提供一螢光層40,使該螢光層40包覆所述發光二極體元件30及覆蓋部分第一電極21、第二電極22。具體的,該螢光層40包覆所述發光二極體元件30,同時包覆第一電極21和第二電極22相互靠近的端部。同時所述螢光層40高度方向上距離該反射部132上表面有一段距離,可以理解的,該螢光層40也可填充整個反射杯13至與所述反射部132上表面齊平。該螢光層40還可根據發光二極體元件30與發光需要包含有螢光粉,該螢光粉包含石榴石基螢光粉、矽酸鹽基螢光粉、原矽酸鹽基螢光粉、硫化物基螢光粉、硫代鎵酸鹽基螢光粉、氮氧化物基螢光粉和氮化物基螢光粉中的一種或多種。Referring to FIG. 3, a phosphor layer 40 is provided. The phosphor layer 40 covers the LED component 30 and covers a portion of the first electrode 21 and the second electrode 22. Specifically, the phosphor layer 40 covers the light emitting diode element 30 while covering the ends of the first electrode 21 and the second electrode 22 close to each other. At the same time, the phosphor layer 40 is at a distance from the upper surface of the reflective portion 132 in the height direction. It can be understood that the phosphor layer 40 can also fill the entire reflective cup 13 to be flush with the upper surface of the reflective portion 132. The phosphor layer 40 may further include a phosphor powder according to the LED element 30 and the light emission, and the phosphor powder comprises a garnet-based phosphor powder, a niobate-based phosphor powder, and a protonate-based phosphor. One or more of powder, sulfide-based phosphor powder, thiogallate-based phosphor powder, oxynitride-based phosphor powder, and nitride-based phosphor powder.

請同時參見圖4,在該封裝基板10的第一表面11設置複數連接塊50,具體的,所述複數連接塊50設於該反射部132的上表面上。Referring to FIG. 4 , a plurality of connecting blocks 50 are disposed on the first surface 11 of the package substrate 10 . Specifically, the plurality of connecting blocks 50 are disposed on the upper surface of the reflecting portion 132 .

提供一反射型偏光增亮膜片60(Dual Brightness Enhancement Film,簡稱DBEF),藉由該連接塊50,利用低溫共燒的方式將所述反射型偏光增亮膜片60設置結合在該封裝基板10上。所述反射型偏光增亮膜片60為多層膜片61交疊而成,本實施例中,所述多層膜片的數量為3層。其中該膜片由兩種折射率為1.88及1.64的化合物摻雜而成,每一膜片具有不同的折射率,且均為出光性好的透明材料製成,優選的,本實施例中,該反射型偏光增亮膜片60的材料為SiO2,可以理解的是,所述反射型偏光增亮膜片60還可採用其他任何合適的材料製成。A reflective brightness enhancing film 60 (Dual Brightness Enhancement Film, DBEF) is provided, and the reflective polarizing film 60 is disposed on the package substrate by low temperature co-firing by the connecting block 50. 10 on. The reflective polarizing brightening film 60 is formed by overlapping the multilayer film 61. In this embodiment, the number of the multilayer film is three. The film is made of two kinds of compounds having refractive indexes of 1.88 and 1.64, each of the films has different refractive indexes, and is made of a transparent material with good light-emitting property. Preferably, in this embodiment, The material of the reflective polarizing film 60 is SiO2. It is to be understood that the reflective polarizing film 60 can also be made of any other suitable material.

具體的,在850℃-900℃溫度的環境下,該連接塊50熔化,將所述封裝基板10的反射部和所述反射型偏光增亮膜片60緊密結合在一起,同時對應所述螢光層的區域與所述偏光增亮膜片之間存在間隙。即在低溫共燒後,該封裝基板10設有連接塊的部分與所述反射型偏光增亮膜片60緊密貼合,對應螢光層40的部分與所述反射型偏光增亮膜片60仍存在間隙,從而既保證了所述封裝基板10和所述反射型偏光增亮膜片60的穩固連接,同時也避免了該整個發光二極體100在共燒的制程中受到破壞。Specifically, in a temperature range of 850 ° C to 900 ° C, the connecting block 50 is melted, and the reflecting portion of the package substrate 10 and the reflective polarizing brightness enhancing film 60 are tightly combined, and corresponding to the firefly. There is a gap between the area of the light layer and the polarizing brightening film. That is, after the low temperature co-firing, the portion of the package substrate 10 provided with the connection block is closely adhered to the reflective polarizing brightness enhancement film 60, and the portion corresponding to the fluorescent layer 40 and the reflective polarization enhancing film 60 are There is still a gap, so that the stable connection of the package substrate 10 and the reflective polarizing brightness enhancing film 60 is ensured, and the entire LED body 100 is prevented from being damaged in the co-firing process.

請再參閱圖5,將共燒完畢後的發光二極體100切割,從而分離出光效率更高的多個發光二極體封裝元件。Referring to FIG. 5 again, the light-emitting diode 100 after the co-firing is cut, thereby separating a plurality of light-emitting diode packages having higher light efficiency.

圖6至圖11為本發明的第二實施例,該實施例中的LED封裝制程與上述第一實施例中的封裝制程相似,不同之處在於第二實施例中提供多個相互分離的封裝基板10,並將該多個封裝基板10設於一載板70上,如此則後續形成發光二極體100後,只需將每一封裝基板10與所述載板70分離。6 to 11 are second embodiments of the present invention, and the LED package process in this embodiment is similar to the package process in the first embodiment described above, except that the plurality of separate packages are provided in the second embodiment. The substrate 10 is disposed on a carrier 70. Thus, after the LEDs 100 are subsequently formed, each package substrate 10 is separated from the carrier 70.

與先前技術相比,本發明該發光二極體在該反射部的上表面設置複數連接塊,將反射型偏光增亮膜片設置在LED的出光面上,藉由低溫共燒的方式,使該封裝基板對應反射部上表面的區域和反射型偏光增亮膜片緊密結合在一起,同時該封裝基板對應該螢光層的區域和反射型偏光增亮膜片相互間隔,從而既保證了所述封裝基板和所述反射型偏光增亮膜片的穩固連接,同時也避免了該發光二極體在共燒的制程中受到破壞。Compared with the prior art, the light-emitting diode of the present invention is provided with a plurality of connecting blocks on the upper surface of the reflecting portion, and the reflective polarizing brightening film is disposed on the light-emitting surface of the LED, and is formed by low-temperature co-firing. The area of the package substrate corresponding to the upper surface of the reflective portion and the reflective polarizing brightness enhancing film are tightly combined, and the area of the package substrate corresponding to the fluorescent layer and the reflective polarizing brightness enhancing film are spaced apart from each other, thereby ensuring The stable connection of the package substrate and the reflective polarizing brightness enhancing film also avoids damage of the light emitting diode in the co-firing process.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100...發光二極體100. . . Light-emitting diode

10...封裝基板10. . . Package substrate

11...第一表面11. . . First surface

12...第二表面12. . . Second surface

13...反射杯13. . . Reflective cup

131...承載部131. . . Carrying part

132...反射部132. . . Reflection section

133...收容空間133. . . Containing space

20...導電架20. . . Conductive frame

30...發光二極體元件30. . . Light-emitting diode component

21...第一電極twenty one. . . First electrode

22...第二電極twenty two. . . Second electrode

40...螢光層40. . . Fluorescent layer

50...連接塊50. . . Connector

60...反射型偏光增亮膜片60. . . Reflective polarizing brightening diaphragm

61...膜片61. . . Diaphragm

70...載板70. . . Carrier board

圖1至圖5為本發明第一實施例的發光二極體封裝結構的製造步驟示意圖。1 to FIG. 5 are schematic diagrams showing manufacturing steps of a light emitting diode package structure according to a first embodiment of the present invention.

圖6至圖11為本發明第二實施例的發光二極體封裝結構的製造步驟示意圖。6 to 11 are schematic diagrams showing manufacturing steps of a light emitting diode package structure according to a second embodiment of the present invention.

100...發光二極體100. . . Light-emitting diode

10...封裝基板10. . . Package substrate

11...第一表面11. . . First surface

12...第二表面12. . . Second surface

132...反射部132. . . Reflection section

20...導電架20. . . Conductive frame

30...發光二極體元件30. . . Light-emitting diode component

40...螢光層40. . . Fluorescent layer

50...連接塊50. . . Connector

60...反射型偏光增亮膜片60. . . Reflective polarizing brightening diaphragm

Claims (10)

一種發光二極體封裝方法,包括步骤:
提供一封裝基板;
蝕刻所述封裝基板的上表面使封裝基板形成複數反射杯,並在每一反射杯內設置一個導電架,每一個導電架包括相互間隔的第一電極和第二電極;
在各導電架上設置一發光二極體元件,並將發光二極體元件與該第一電極及第二電極形成電性連接;
在該封裝基板的各反射杯之間的上表面上設置複數連接塊;
在該複數連接塊上設置反射型偏光增亮膜片;
低溫共燒所述反射型偏光增亮膜片及連接塊,以通過連接塊將反射型偏光增亮膜片結合在該封裝基板上;及
切割所述封裝基板、反射型偏光增亮膜片及連接塊以形成多個發光二極體封裝元件。
A method for packaging a light emitting diode, comprising the steps of:
Providing a package substrate;
Etching the upper surface of the package substrate to form a plurality of reflective cups, and providing a conductive frame in each of the reflective cups, each of the conductive frames including first and second electrodes spaced apart from each other;
A light emitting diode element is disposed on each of the conductive frames, and the light emitting diode element is electrically connected to the first electrode and the second electrode;
Providing a plurality of connection blocks on an upper surface between the reflective cups of the package substrate;
Providing a reflective polarizing brightening film on the plurality of connecting blocks;
The reflective polarizing brightening film and the connecting block are co-fired at a low temperature to bond the reflective polarizing brightening film to the package substrate through the connecting block; and the package substrate, the reflective polarizing brightness enhancing film and the cutting package are The blocks are connected to form a plurality of light emitting diode package components.
如申請專利範圍第1項所述之發光二極體封裝方法,其中,每一反射杯包括一承載部和貼設該承載部上表面的反射部,所述反射部圍成一收容空間,該反射部的下表面與所述承載部的部分上表面相貼合,所述第一電極和第二電極設於該承載部的上表面並外露於所述收容空間。The method of claim 2, wherein each of the reflective cups includes a carrying portion and a reflecting portion that is attached to the upper surface of the carrying portion, and the reflecting portion encloses a receiving space. The lower surface of the reflecting portion is in contact with a portion of the upper surface of the carrying portion, and the first electrode and the second electrode are disposed on the upper surface of the carrying portion and exposed to the receiving space. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,可在發光元件上覆蓋形成一螢光層,所述螢光層設於該反射杯中並與所述反射部上表面有一段距離。The method of claim 2, wherein a light-emitting layer is covered on the light-emitting element, and the phosphor layer is disposed in the reflective cup and on the upper surface of the reflective portion. There is a distance. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,所述複數連接塊設於該反射部的上表面上。The LED package method of claim 1, wherein the plurality of connection blocks are disposed on an upper surface of the reflection portion. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,所述反射型偏光增亮膜片為多層膜片交疊而成,且均由出光性好的透明材料製成。The method of claim 2, wherein the reflective polarizing film is formed by overlapping a plurality of films, and each of the films is made of a transparent material having good light-emitting properties. 如申請專利範圍第5項所述之發光二極體封裝方法,其中,該膜片由兩種折射率為1.88及1.64的化合物摻雜而成,每一膜片具有不同的折射率。The method of encapsulating a light-emitting diode according to claim 5, wherein the film is doped with two compounds having refractive indices of 1.88 and 1.64, each film having a different refractive index. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,所述低溫共燒的溫度範圍為850℃-900℃。The method of claim 2, wherein the low temperature co-firing temperature ranges from 850 ° C to 900 ° C. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,低溫共燒步驟後,該封裝基板對應螢光層區域和反射型偏光增亮膜片之間呈現一空隙。The method of claim 2, wherein after the low temperature co-firing step, the package substrate presents a gap between the phosphor layer region and the reflective polarizing film. 如申請專利範圍第1項所述之發光二極體封裝方法,其中,低溫共燒步驟後,所述封裝基板對應反射部上表面區域和所述反射型偏光增亮膜片緊密結合在一起。The method of claim 2, wherein after the low temperature co-firing step, the upper surface area of the package substrate corresponding to the reflective portion and the reflective polarizing brightness enhancing film are tightly bonded together. 一種發光二極體封裝方法,包括步骤:
提供複數相互分離的封裝基板,將所述複數封裝基板設於一載板上;
蝕刻每一封裝基板的上表面使封裝基板形成複數反射杯,並在每一反射杯內設置一個導電架,每一個導電架包括相互間隔的第一電極和第二電極;
在各導電架上設置一發光二極體元件,並將發光二極體元件與該第一電極及第二電極形成電性連接;
在所述各發光二極體元件上形成一螢光層以覆蓋該發光二極體元件;
在該封裝基板的各反射杯之間的第一表面上設置複數連接塊;
在該複數連接塊上設置反射型偏光增亮膜片;
低溫共燒所述反射型偏光增亮膜片及連接塊,以通過連接塊將反射型偏光增亮膜片結合在該封裝基板上;及
將所述複數封裝基板從該載板上分離以形成多個發光二極體封裝元件。
A method for packaging a light emitting diode, comprising the steps of:
Providing a plurality of package substrates separated from each other, and the plurality of package substrates are disposed on a carrier board;
Etching the upper surface of each package substrate to form a plurality of reflective cups of the package substrate, and providing a conductive frame in each of the reflective cups, each of the conductive frames comprising first and second electrodes spaced apart from each other;
A light emitting diode element is disposed on each of the conductive frames, and the light emitting diode element is electrically connected to the first electrode and the second electrode;
Forming a phosphor layer on each of the light emitting diode elements to cover the light emitting diode element;
Providing a plurality of connection blocks on the first surface between the reflective cups of the package substrate;
Providing a reflective polarizing brightening film on the plurality of connecting blocks;
Covalently calcining the reflective polarizing brightening film and the connecting block to bond the reflective polarizing brightness enhancing film to the package substrate through the connecting block; and separating the plurality of package substrates from the carrier to form A plurality of light emitting diode package components.
TW100138332A 2011-10-14 2011-10-21 Method of packaging light emitting diode TWI455368B (en)

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