TW201344993A - Package for optical semiconductor device and method thereof, optical semiconductor device and method thereof - Google Patents

Abstract

The purpose of the present invention is to provide a package for optical semiconductor device and method thereof, and optical semiconductor device. The package for optical semiconductor device is employed to implement an optical semiconductor device with relatively high mechanic stability, robust durability and low interference. The present invention also provides a method of manufacturing optical semiconductor device, which has excellent production yield and can reduce the manufacturing cost. To achieve the purpose of the present invention, the present invention provides a package for optical semiconductor device, which is characterized in that at least two electrical connection parts adapted to be electrically connected to an optical semiconductor element and a reflector structure surrounding the to-be-connected optical semiconductor element are provided on the top surface of a base station formed by immersing and curing silicone resin composition in fiber enhanced material.

Description

Package for optical semiconductor device, method of manufacturing the same, and optical semiconductor device and method of manufacturing the same

The present invention relates to a package for an optical semiconductor device, a method of manufacturing the same, and an optical semiconductor device using the package and a method of manufacturing the optical semiconductor device.

Optical elements such as light-emitting diodes (LEDs) and photodiodes, and optical semiconductor devices are widely used in the industry because of their high efficiency and high resistance to external stress and environmental influences. Further, the optical element and the optical semiconductor device are high in efficiency, long in life, small in size, compact, and can be configured in many different configurations, and can be manufactured at a relatively low manufacturing cost (Patent Document 1 and Patent Document 2).

For example, it is known to use an epoxy material having a fiber-reinforced material typified by an epoxy glass cloth laminate (FR-4) as a material for a base for carrying a semiconductor element. In particular, in a high-output optical semiconductor device that generates a large amount of heat, it is very important to use a base having high heat resistance while maintaining a high reflectance for a long period of time.

Moreover, in the machinery used in the aerospace industry, the problem of mechanical malfunction occurs due to the interference of the FR-4 substrate. Therefore, development of a package for an optical semiconductor device using a substrate having low interference Began to pay attention.

[Previous Technical Literature]

(Patent Literature)

Patent Document 1: Japanese Patent Publication No. 2011-521481

Patent Document 2: Japanese Patent No. 4789350

The present invention has been made to solve the above problems (first problem), and an object of the invention is to provide a package for an optical semiconductor device, a method of manufacturing the same, and an optical semiconductor device using the package, which is used for a package for an optical semiconductor device An optical semiconductor device having high mechanical stability, high durability, and low interference is realized.

Moreover, an optical semiconductor device manufactured by a collective substrate called a matrix array package (MAP) is difficult to perform a power-on inspection in its manufacturing stage, but is in a final product shape (single graining) The singulation optical semiconductor device is then subjected to an energization check. Therefore, it is impossible to confirm the quality defect in the manufacturing stage, and thus the production efficiency is lowered.

Further, the optical semiconductor device needs to perform sorting due to the output of the optical semiconductor element or the concentration deviation of the sealed phosphor. In general, in the sorting step of the optical semiconductor device, the optical semiconductor device is completely granulated. However, since the sorting in the completely singulated state requires the arrangement of the optical semiconductor device or the like. The steps, therefore, result in increased costs.

The present invention has been made to solve the above problem (second problem), and an object of the invention is to provide a method for manufacturing an optical semiconductor device and an optical semiconductor device manufactured by the method, which is excellent in production efficiency and can reduce cost .

In order to solve the above-mentioned first problem, the present invention provides a package for an optical semiconductor device, characterized in that a top surface of a base which is obtained by impregnating a fluorenone resin composition with a fiber reinforced material and hardening it is provided. There are at least two electrical connection portions to be electrically connected to the optical semiconductor element, and a reflector structure surrounding the optical semiconductor element to be connected.

According to such a package for an optical semiconductor device, an optical semiconductor device having high mechanical stability, high durability, and low interference can be realized.

Further, the fiber-reinforced material is preferably a glass fiber.

If the fiber-reinforced material is glass fiber, the base exhibits good ultraviolet resistance and heat resistance, and also ensures good adhesion of the fiber-reinforced material to the fluorenone resin composition. Further, since the glass fiber is a material that is inexpensive and easy to handle, it is also advantageous in terms of cost.

Further, it is preferable that the base is cured by using at least one layer of a prepreg in which the fluorenone resin composition is impregnated into the fiber reinforced material.

In this way, by using one or two or more layers of prepregs, the thickness can be controlled according to the use, and the mechanical stability is further improved.

Further, the fluorenone resin composition may be a condensation-curable or addition-curable fluorenone resin composition.

Thereby, a mechanical property, heat resistance, and discoloration resistance can be easily obtained. A package for an optical semiconductor device which is excellent in properties and has few pleats on the surface.

Further, the electrical connection portion is composed of at least one metal layer.

Thereby, the electrical connection can be formed by a simple and costly (ie, low cost) and simple step.

Moreover, it is preferable that the base has a bottom metal coating layer on the bottom surface, and further preferably has at least one via, and the electrical connection portion of the top surface of the base and the metal coating layer of the bottom surface pass through the through hole. Electrical connection.

If it is such a base, the heat dissipation is excellent, and the connection with other substrates can be realized by the underlying metal coating layer. Further, by using the through holes, the design of the package for the optical semiconductor device can be increased, and a space-saving electrical connection between the upper and lower surfaces of the base can be achieved.

Further, the reflector structure may be formed of any one of an oxime resin, an epoxy resin, and a hybrid resin of an oxime resin and an epoxy resin.

By using such a resin, it is possible to easily form a reflector structure having high durability and high reflectivity.

Further, it is preferable that the base has a relative dielectric constant of 5.0 or less at 25 ° C and 1 GHz.

If it is such a base, it is possible to further achieve low noise.

Moreover, the present invention provides a method for producing a package for an optical semiconductor device, which is a method for producing a package for an optical semiconductor device, which comprises the steps of: a step of fabricating a substrate to prepare an impregnation resin composition a base formed by hardening in a fiber reinforced material; a top metal coating layer forming step, forming a top on the top surface of the base a surface metal coating layer; an electrical connection portion forming step of forming the top metal cladding layer on at least two electrical connection portions to be electrically connected to the optical semiconductor element; and a reflector structure molding step having the The reflector is formed on the abutment of the electrical connection portion by transfer molding or injection molding to surround the optical semiconductor element to be connected.

According to the method for producing a package for an optical semiconductor device, a package for an optical semiconductor device having high mechanical stability, high durability, and low interference can be easily manufactured at low cost.

Furthermore, it is preferable that after the step of forming the electrical connection portion and before the step of forming the reflector structure, there is a surface treatment step of performing plasma treatment and/or ultraviolet (UV) on the surface of the base. ) Ozone treatment.

By having such a surface treatment step, the adhesion strength of the reflector structure can be improved.

Moreover, in the present invention, an optical semiconductor device is manufactured which is manufactured by carrying an optical semiconductor element on the package for an optical semiconductor device.

In the case of such an optical semiconductor device, mechanical stability is high and high durability and low interference are obtained.

In order to solve the above-described second problem, the present invention provides a method of manufacturing an optical semiconductor device, and a method of manufacturing an optical semiconductor device, comprising the steps of: constructing a plurality of structures on a substrate having an energization portion Optical semiconductor components, thereby obtaining an optical semiconductor component assembly substrate; In the half-cutting step, the optical semiconductor element assembly substrate is half-cut, thereby cutting a part of the current-carrying portion to form an electronic circuit for conducting electricity inspection in the optical semiconductor element assembly substrate; and an energization inspection step for the power-on inspection electronic circuit Performing a power-on check to obtain optical characteristic information of each of the foregoing optical semiconductor elements; a sorting step of sorting the optical semiconductor elements using the optical characteristic information; and a full-cutting step on the cutting line of the half-cutting step By performing the full dicing, the optical semiconductor element assembly substrate is divided into the respective optical semiconductor devices, and thus a plurality of the optical semiconductor devices separated by the optical characteristic information are obtained.

If it is such a manufacturing method of an optical semiconductor device, production efficiency is good, and cost can be reduced.

Further, it is preferable that the energization inspection step is performed using the optical characteristic detecting means in the energization inspection step.

Thereby, it is possible to confirm and sort, for example, whether each optical semiconductor element is lit, a beam value, a chromaticity, a color temperature, a wavelength spectrum, a color rendering property, and the like.

Furthermore, in the energization inspection step, optical characteristics detecting optical lenses are disposed corresponding to each optical semiconductor element, and optical characteristic information is obtained.

Thereby, the optical characteristic information of a large number of optical semiconductor elements can be obtained by one measurement, and the workload of sorting of an optical semiconductor device is drastically reduced.

Further, as the substrate having the above-described current-carrying portion, a substrate obtained by transfer molding a resin on a metal frame, or A substrate obtained by transferring a resin onto a printed substrate.

If such a substrate is used, the manufacturing method of the optical semiconductor device will be more efficient, and the cost can be further reduced.

Further, it is preferable to use a substrate having a groove in a portion cut by the metal frame in the half-cut step as a substrate on which the resin is transferred onto the metal frame.

Thereby, the notch of the molding resin caused by the dicing burr or chipping can be prevented.

Moreover, it is preferable to use a board|substrate which impregnates the fiber reinforcement material of three or more layers, and is a board|

In the case of such a printed substrate, an optical semiconductor device having high heat resistance or ultraviolet resistance can be produced.

Further, preferably, in the above-described full cutting step, a cutting blade having a width different from the width of the cutting blade used in the half cutting step is used.

Thereby, when the positional shift occurs in the half-cutting step or the full-cutting step, the optical semiconductor device can be completely granulated.

Moreover, in the half-cutting step, it is preferable to form an electronic circuit for checking the power supply, and the electronic circuit for checking the power supply has a connection surface to which the power source probe used in the power-on inspection step is connected.

In this way, the connection surface of the power source probe is designed on the electronic circuit of the optical semiconductor element assembly substrate, whereby the workability is further improved.

Furthermore, in the invention, an optical semiconductor device manufactured by the method for manufacturing an optical semiconductor device described above is provided.

In the case of such an optical semiconductor device, since the groove portion is formed by the half cut, when it is mounted on the external substrate, the groove portion is used. A good adhesion strength can be obtained by placing an adhesive material with an external substrate.

As described above, the package for an optical semiconductor device according to the present invention can achieve a high mechanical stability and high durability by using a base which is obtained by impregnating a fluorenone resin composition with a fiber reinforced material and hardening it. Optical, low-interference optical semiconductor device. Further, the initial beam and the initial reflectance can be maintained by the reflector structure. Further, by providing the perforations, high heat dissipation properties can be imparted, and a high-output optical semiconductor device can be assembled at a high density.

Moreover, according to the method of manufacturing an optical semiconductor device of the present invention, the energization inspection can be performed at the manufacturing stage, and the optical characteristic information obtained at the time of energization inspection can be used to realize sorting and quality processing in the manufacturing stage. Therefore, productivity can be improved. Moreover, since the energization inspection is performed on the optical semiconductor element collective substrate, the steps of arranging each optical semiconductor device and the like can be omitted, and the cost can be reduced by the simplified manufacturing method.

Moreover, in the optical semiconductor device manufactured by the above-described manufacturing method, the groove portion is formed by half cutting. Therefore, when the semiconductor device of the present invention is mounted on an external substrate, a good adhesion strength can be obtained by arranging an adhesive material on the groove portion with the external substrate.

Further, according to the arrangement pitch of the optical semiconductor devices of the half-cut optical semiconductor element assembly substrate in the above-described energization inspection, a plurality of optical lenses for measurement are disposed, whereby a large number of optical characteristics can be obtained by one measurement. Information, and the amount of work required for sorting optical semiconductor devices is greatly reduced.

1‧‧‧Abutment

2‧‧‧Fiber Strengthening Materials

2', 2" ‧ ‧ fiber

3‧‧‧Electrical connection

4, 4a, 4b‧‧‧ bottom metal coating

5‧‧‧矽 ketone resin composition

6‧‧‧Reflect structure

7‧‧‧Perforation

10‧‧‧Package for optical semiconductor devices

11‧‧‧Up and down metal mold

12a, 12b‧‧‧ Optical semiconductor components

13‧‧‧ Inner material

14‧‧‧ lead

15‧‧‧Optical semiconductor device

201‧‧‧Metal frame (metal wire frame)

202‧‧‧Printed substrate

203‧‧‧Optical semiconductor device

204‧‧‧Substrate

205, 205'‧‧‧Electric power supply (electrode, external terminal)

206‧‧‧Optical semiconductor components

207‧‧‧welding line

208‧‧‧Molded goods (reflectors)

209‧‧‧Sealing Resin (Anthrone Resin)

210‧‧‧ Groove (groove)

211‧‧‧Perforation

212‧‧‧Optical semiconductor component assembly substrate

203‧‧‧Electricity Department

213'‧‧‧Electronic circuit for power check

214‧‧‧ half cut line

215‧‧‧ Connection surface

216‧‧‧glass fiber material

217‧‧‧Adhesive materials

218‧‧‧Optical lens group

219‧‧‧External substrate

220‧‧‧ Spectroscope (optical characteristic detection device)

221‧‧‧Half cut

222‧‧‧ optical lens

223‧‧‧ cavity structure

224‧‧‧ fiber optic

Fig. 1A is a plan view of a package for an optical semiconductor device of the present invention.

Fig. 1B is a schematic cross-sectional view showing a package for an optical semiconductor device of the present invention.

Fig. 1C is a schematic plan view showing a fiber direction of a fiber layer of a fiber-reinforced material in a base.

2A is a plan view of a package for an optical semiconductor device before a reflector structure molding step.

2B is a plan view of the package for an optical semiconductor device of the present invention after the reflector structure molding step.

Fig. 2C is a schematic cross-sectional view showing a step of molding a reflector structure.

FIG. 3 is a schematic view showing a step of singulating the package for an optical semiconductor device of the present invention after the reflector structure molding step.

4A is a schematic cross-sectional view of an optical semiconductor device of the present invention.

Fig. 4B is a schematic cross-sectional view showing another aspect of the optical semiconductor device of the present invention.

Fig. 5 is a schematic cross-sectional view showing an optical semiconductor device of the present invention.

Fig. 6 is a schematic plan view of an optical semiconductor element collective substrate.

Fig. 7 is a schematic perspective view showing a half-cut step of the optical semiconductor element collective substrate.

8 is a schematic plan view showing an optical semiconductor element assembly substrate, and a schematic plan view showing an example of a half-cut position on the optical semiconductor element assembly substrate and an electronic circuit manufacturing method.

Figure 9 is a diagram showing the connection between the optical semiconductor device of the present invention and an external substrate A schematic cross-sectional view of the law.

Fig. 10 is a schematic plan view showing a method of checking energization of an optical semiconductor element collective substrate.

Fig. 11 is a flow chart showing a method of manufacturing the optical semiconductor device of the present invention.

Fig. 12 is a flow chart showing a method of manufacturing another optical semiconductor device of the present invention.

FIG. 13 is a schematic cross-sectional view showing a method of detecting optical characteristic information of an optical semiconductor element collective substrate which is performed by an optical lens group.

Hereinafter, the package for an optical semiconductor device of the present invention will be described in detail, but the present invention is not limited thereto. As described above, there is a need for a package for an optical semiconductor device which provides an optical semiconductor device having high mechanical stability and high durability and low interference.

In order to achieve the above-mentioned problems, the inventors of the present invention have conducted intensive studies and found that it is possible to simultaneously achieve mechanical stability, high durability, and low interference by using a base in which an anthrone resin composition is impregnated with a fiber-reinforced material and hardened. Further, the present invention can be completed by using a reflector structure to maintain the initial light beam and initial reflectance of the optical semiconductor element.

That is, the present invention is a package for an optical semiconductor device having at least a top surface to be electrically connected to an optical semiconductor element in a top surface of a base in which an fluorenone resin composition is impregnated and hardened in a fiber-reinforced material. Two electrical connecting portions and a reflector structure surrounding the optical semiconductor element to be connected.

[base]

Fig. 1A is a plan view showing a package 10 for an optical semiconductor device of the present invention. In Fig. 1B, a cross-sectional view taken along line AA of Fig. 1A is shown. The base 1 is obtained by impregnating the fluorenone resin composition 5 into the three-layer fiber-reinforced material 2 and hardening it. In this way, a base having a dielectric constant lower than that of the conventional epoxy substrate (FR-4 or the like) as a main component is used, and the interference is low. Further, the package for an optical semiconductor device has high heat resistance, and the base does not become yellow in a long-term environmental test (such as a high-temperature and high-humidity test), and the high reflectance is maintained for a long period of time. Moreover, such a base is excellent in flexibility and easy to handle.

When a high-output diode is used (the light output is high, so a large amount of waste heat is also generated), or when the package for an optical semiconductor device is used in an environment where the temperature rises (for example, a headlight near an engine of a car), The requirements for stricter heat resistance requirements. It is also possible to satisfy these requirements if it is a package for an optical semiconductor device of the present invention.

In particular, it is preferred that the base has a relative dielectric constant of 5.0 or less at 25 ° C and 1 GHz. If it is such a relative dielectric constant, the low interference is more excellent.

Further, the shape of the top surface of the base can be rectangular or square, and is preferably a flat structure. Preferably, the thickness of the abutment is as thin as possible, and preferably, it has sufficient mechanical stability, for example, it does not cause bending due to its own weight. The thickness of the base 1 is 1 mm or less, preferably 0.6 mm or less, and particularly preferably 0.4 mm or less.

Further, as shown in FIG. 2B, the base 1 of the package 10 for an optical semiconductor device may have a plurality of optical semiconductor element carrying portions (at least two electrical connecting portions 3 to be electrically connected to the optical semiconductor elements), and Can be taken In the form of a large area printed substrate. Further, the package for an optical semiconductor device may be divided into smaller individual components before or after mounting the optical semiconductor element.

[矽 树脂 树脂 resin composition]

The anthrone resin is highly suitable as a constituent material of the base because it has high heat resistance and high durability, and has a low dielectric constant and low interference. The fluorenone resin composition is not particularly limited, but is preferably a curable fluorenone resin composition and is an addition-curable or condensed-curable fluorenone resin composition. In the case of such an oxime resin composition, it is possible to easily obtain a base which can be easily molded in the prior molding apparatus, has excellent mechanical properties, and has less pleats on the surface. Further, it is possible to easily obtain a package for an optical semiconductor device which is excellent in mechanical properties, heat resistance, and discoloration resistance, and has less pleats on the surface.

In particular, when the fluorenone resin composition which is solid at room temperature as described in JP-A-2010-89493 is used, the fluorenone resin composition is dissolved in a solvent and dispersed in a solvent. In the fiber-reinforced material, after the solvent is evaporated and removed from the fiber-reinforced material, the composition is in the A-stage state and is a solid. Therefore, the prepreg in which the fluorenone resin composition is impregnated into the fiber-reinforced material is more easily stored, and can be molded more easily by a heat press, and further, the package for an optical semiconductor device can be more freely used. The shape is shaped. Moreover, the optical semiconductor device of the present invention produced by using the package for an optical semiconductor device has a small change in the temporal wavelength (hue) and a change in the initial beam or reflectance, and has a long life.

Further, an inorganic filler can be added to the fluorenone resin composition of the present invention. Fill the material. Specifically, alumina, ceria, barium titanate, potassium titanate, barium titanate, calcium carbonate, aluminum carbonate, magnesium hydroxide, aluminum hydroxide, tantalum nitride, aluminum nitride, boron nitride can be used. And carbonized bismuth, etc. These inorganic fillers may be used singly or in combination of two or more.

The shape and particle diameter of the inorganic filler are not particularly limited. The filler material may have a particle diameter of generally from 0.01 to 50 μm, preferably from 0.1 to 20 μm.

In the fluorenone resin composition of the present invention, the amount of the inorganic filler to be added is not particularly limited, and may be usually 1 to 1000 parts by mass, preferably 5 to 800 parts by mass, based on 100 parts by mass of the total of the resin component.

In addition to the inorganic filler, one or more additional substances may be added to the fluorenone resin composition. As such an additive, for example, a form of a diffusion medium, a dye, a filter medium, a reflection medium, and a conversion medium can be used, and examples thereof include a luminescent dye, a hollow particle, an adhesion promoter, and the like. With such an additive substance, it is possible in particular to have the optical characteristics of the abutment even if the abutment has, for example, reflectivity, penetration or absorption. In this way, the design choice of the abutment is increased by using one or more additional substances.

[Fiber reinforced material]

As the fiber-reinforced material, any of the following may be used depending on the product characteristics: inorganic fibers such as carbon fiber, glass fiber, quartz glass fiber, and metal fiber; aromatic polyamide fibers, polyimine fibers, and polyamines. Organic fibers such as yttrium imide fibers; and cerium carbide fibers, titanium carbide fibers, boron fibers, and alumina fibers. Preferred fibers are glass fibers, quartz fibers, carbon fibers, and the like. Among them, glass fibers or quartz glass fibers having high insulation properties are particularly preferred. From other points of view, as a fiber The material is particularly preferably a material which exhibits good adhesion to the fluorenone resin composition and high mechanical loadability. Further, it is preferable that the fiber-reinforced material has at least the same heat resistance as the fluorenone resin composition and a low coefficient of thermal expansion.

In particular, if the fiber-reinforced material is glass fiber, the abutment will exhibit good ultraviolet resistance and heat resistance. Further, by using glass fibers, good adhesion of the fiber-reinforced material to the fluorenone resin composition is ensured. Also, glass fibers are inexpensive and easy to handle materials.

Here, in Fig. 1C, the direction of the fibers 2', 2" of the fiber layer of the fiber-reinforced material 2 in the base is schematically shown. As shown in Fig. 1C, the fiber-reinforced material 2 preferably has three or more layers. More preferably, the fiber layer has four layers of fibers. Further, it is preferable that the fibers 2' and 2" of the respective layers of the fiber-reinforced material 2 extend in a direction parallel to the main surface of the base 1. Generally, in a fibrous layer of a fiber-reinforced material, a plurality of fibers are oriented in a substantially parallel direction and the fibers are aligned in the same direction. When the electrically insulating base is provided with a fiber-reinforced material comprising a plurality of layers, it is preferred that the fiber directions of the respective fiber layers are rotated by 90° with respect to each other. If the fiber reinforced material of the abutment is such a multilayer structure, the mechanical stability of the abutment will be higher. Here, "rotation" means that the direction of the fibers in each layer is rotated by 90° with respect to the axis perpendicular to the top surface and/or the bottom surface of the base 1 (FIG. 1C).

The form of the fiber-reinforced material is not particularly limited, and is preferably a sheet such as roving, woven fabric, or non-woven fabric obtained by uniformly stretching long filaments in a predetermined direction, and further preferably, chopped strand mat A material that can form a laminate.

Also, the fiber reinforced material may be completely surrounded by the fluorenone resin. Such a If the outer surface of the base is an fluorenone resin, the step of attaching the electrical connection portion or the underlying metal coating layer to the base can be simplified. Further, since the fiber-reinforced material is protected by the fluorenone resin, the metal or metal ions do not reach the fibers, so that, for example, metal ions can be prevented from moving along the fibers.

[Electrical connection part, bottom metal coating layer]

The package 10 for an optical semiconductor device according to the present invention has at least two electrical connecting portions 3 (Fig. 1B) to be electrically connected to the optical semiconductor element on the top surface of the base 1. Each of the electrical connection portions may be designed to be connected to the optical semiconductor element by a metal lead or the like, or to be connected to the optical semiconductor element by a flip chip configuration.

Preferably, the base further has a bottom metal coating layer 4 on the bottom surface (Fig. 1B). Preferably, the bottom metal coating layer is configured to be electrically connected to an external connection portion that carries the package for an optical semiconductor device of the present invention by, for example, soldering or adhesive bonding.

The electrical connection portion, the underlying metal coating layer, and the like can be formed using a metal or a metal alloy. The metal or metal alloy is not particularly limited, and examples thereof include copper, nickel, gold, palladium, silver, or an alloy thereof. Further, the electrical connection portion or the bottom metal coating layer may be formed of a transparent conductive material (for example, an inorganic filler (also known as a transparent conductive oxide (TCO)).

Further, the electrical connection portion and the bottom metal coating layer are composed of at least one metal layer, and may be composed of a plurality of layers of different metals or metal alloys. For example, it is preferable that the first metal layer located at the position closest to the base in the electrical connection portion is a copper layer. The thickness of the first metal layer is preferably 30 or more and less than 150 μm, 30 or more and less than 80 μm, and particularly preferably It is 30 or more and less than 50 μm. Further, at least one of the second metal layers of nickel, palladium, gold, and silver may be formed on the first metal layer. The thickness of these layers is preferably less than 25 μm, particularly preferably less than 5 μm, and most preferably less than 2 μm. Particularly when a nickel-gold layer is formed on the copper layer, it is preferably less than 500 nm. Such a second metal layer can be formed by a cost-effective and simple process, and can be effectively structured.

The electrical connection portion and the underlying metal coating layer are not particularly limited, and may be formed by a printing method, a dipping method, a vapor deposition method, a sputtering method, or a plating method. Preferably, the surface of the abutment is roughened to ensure good adhesion of the electrical connection portion and the underlying metal coating layer to the base.

Moreover, it is preferable that the electrical connection portion and the bottom metal coating layer are configured to be connected to the optical semiconductor element or the external connection portion by soldering. At this time, it is preferable that the package for an optical semiconductor device of the present invention can withstand the thermal stress generated at the time of the soldering step. In the case of such a package for an optical semiconductor device, for example, connection to an optical semiconductor element or an external connection portion can be achieved with good yield. At this time, it is preferable that the bottom metal coating layer is formed in a region that is connected to the external connection portion and electrically insulated from each other. Further, it is preferable that the electrical connection portion or the bottom metal coating layer covers most of the surface of the base (for example, 50% or more). Since the metal generally exhibits high thermal conductivity, the electrical connection portion or the underlying metal coating layer is formed in a large area, whereby a base which exhibits high thermal conductivity to the outside can be formed.

Moreover, it is preferable that the base 1 further has at least one or more vias 7, and the electrical connection portion 3 on the top surface of the base 1 and the bottom metal coating layer 4 can be electrically connected through the through holes 7 (FIG. 1B). ). In Figure 1B, the bottom gold The coating layer 4 is divided into a bottom metal coating layer 4a and a bottom metal coating layer 4b, and the bottom metal coating layer 4b is larger than the bottom metal coating layer 4a, and the number of perforations is also large. Thereby, the heat generated by the optical semiconductor element can be efficiently diffused. The perforations can be, for example, tunnel shaped holes. This perforation can be formed using, for example, drilling, laser drilling or punching. The electrical connection between the electrical connection portion and the underlying metal coating layer can be formed by metal-coated perforated inner surface or filled with a conductive material. With the perforation, the design choice of the package for an optical semiconductor device can be increased, and a space-saving electrical connection between the top surface and the bottom surface of the base can be achieved.

[reflector structure]

The package for an optical semiconductor device of the present invention has a reflector structure 6 surrounding an optical semiconductor element to be connected to the top surface of the base 1 (Fig. 1B). Further, a resin molded structure may be provided on the bottom surface of the base according to the purpose. Further, in the present invention, the reflector structure is not particularly limited as long as it is a structure that surrounds the optical semiconductor element and reflects light from the optical semiconductor element, and may be a pit or a concave structure that accommodates the optical semiconductor element. By forming a reflector structure using a resin on the surface of the base, it is possible to manufacture a highly functional package for an optical semiconductor device in which durability is further improved.

Further, the reflector structure may be formed of any one of an oxime resin, an epoxy resin, and a hybrid resin of an oxime resin and an epoxy resin.

The resin is not particularly limited, but from the viewpoint of heat resistance and durability, it is preferred to use a thermosetting ketone resin composition; a triazine derivative epoxy resin, an acid anhydride, and a hardening accelerator. And inorganic filling A thermosetting epoxy resin composition of the agent; or a hybrid resin (mixed resin) composition containing a thermosetting fluorenone resin and an epoxy resin. Further, it is desirable to select a molding resin in accordance with the use of the final optical semiconductor device.

As an example of the above-mentioned thermosetting fluorenone resin, a condensed-hardening thermosetting fluorenone resin composition represented by the following average chemical formula (1) and the like are exemplified. Further, an addition-curable fluorenone resin composition can also be used.

R ¹ _a Si(OR ² ) _b (OH) _c O _(4-abc)/2 (1)

(wherein R ¹ represents the same or different kinds of organic groups having 1 to 20 carbon atoms, and R ² represents the same or different kinds of organic groups having 1 to 4 carbon atoms, satisfying 0.8≦a≦1.5, 0≦b≦0.3 , 0.001≦c≦0.5, 0.801≦a+b+c<2.)

As an epoxy resin composition, it is desirable to form a triazine derivative epoxy resin, a 1,3,5-triazine core derivative epoxy resin, that is, a thermosetting epoxy resin from the viewpoints of heat resistance, light resistance, and the like. Things. It is not limited to the use of a triazine derivative as an epoxy resin and an acid anhydride as a curing agent, and a conventionally known epoxy resin, an amine, a phenol curing agent, or the like can be suitably used.

In addition, examples of the hybrid resin of the fluorenone resin and the epoxy resin include a copolymer containing the above epoxy resin and the above fluorenone resin.

The inorganic filler may be formulated into the composition of the above fluorenone resin or epoxy resin. As the inorganic filler to be blended, a material which is generally formulated into an oxime resin composition or an epoxy resin composition or the like can be used. Examples thereof include cerium oxide such as molten cerium oxide and crystalline cerium oxide; fibrous filler materials such as alumina, tantalum nitride, aluminum nitride, boron nitride, glass fiber, and wollastonite; Antimony trioxide, etc. These ones The average particle diameter or shape of the inorganic filler is not particularly limited.

Titanium dioxide can be further formulated into the resin composition used in the present invention. Titanium dioxide is used as a white coloring material for improving whiteness and improving light reflection efficiency. The unit cell of titanium dioxide may be any of rutile-type and anatase-type anatase. . Further, the average particle diameter or shape is also not limited. The titanium dioxide may be surface-treated in advance by a hydrated oxide such as Al or Si to improve compatibility and dispersibility with a resin or an inorganic filler.

Preferably, the amount of titanium dioxide filled is 2 to 30% by mass, and particularly preferably 5 to 10% by mass based on the total composition. If it is less than 2% by mass, sufficient whiteness may not be obtained, and if it exceeds 30% by mass, moldability such as unfilling or voids may be lowered.

In the package for an optical semiconductor device, a reflector structure is formed by a resin molding step (transfer molding or injection molding), and after the resin molding, a dicing step is performed to produce a single-packaged package for an optical semiconductor device.

[Method of Manufacturing Package for Optical Semiconductor Device]

In the method for producing a package for an optical semiconductor device according to the present invention, the base step is as follows: a base for impregnating the fluorenone resin composition with the fiber reinforced material and curing the base; and a top metal coating layer forming step Forming a top metal coating layer on the top surface of the base; and forming an electrical connection portion, the top metal coating layer is formed on at least two electrical connection portions to be electrically connected to the optical semiconductor element; , In the reflector structure forming step, the reflector structure is formed by transfer molding or injection molding on the aforementioned base having the electrical connection portion so as to surround the connected optical semiconductor element.

‧Base making steps

In the base production step, the fluorenone resin composition is impregnated into the fiber reinforced material and hardened to prepare a base. The manufacturing abutment can be carried out by any of a solvent method and a hot melt method. When a solvent method is used, a resin varnish in which an oxime resin composition is dissolved in an organic solvent is prepared, and the resin varnish is impregnated into the fiber reinforced material, and is desolventized by heating, thereby producing a prepreg. The thickness of the substrate such as a prepreg depends on the thickness of the reinforcing fiber or the like to be used, and when the substrate is to be thickened, a plurality of reinforcing fibers are laminated.

More specifically, the solution may be impregnated with a glass cloth, preferably at 50 to 150 ° C, more preferably at 60 to 120 ° C in a solution or dispersion of the fluorenone resin composition, thereby obtaining hydrazine. Ketone prepreg.

Further, when the hot melt method is used, the solid ketone resin composition is heated and dissolved, and it is impregnated into the fiber reinforced material, thereby producing a prepreg.

Here, it is preferable that the base is cured by using at least one layer of a prepreg which impregnates the fluorenone resin composition with the fiber reinforced material. At this time, the number of prepregs corresponding to the thickness of the insulating layer may be superimposed and heated under pressure to form a base.

‧Top metal coating formation step

In the top metal coating layer forming step, a top metal coating layer is formed on the top surface of the base made above. The top metal coating layer is not particularly limited and can be formed by a printing method, a dipping method, vapor deposition, and sputtering. Again, this It is also possible to simultaneously form the underlying metal coating layer.

In addition, a metal foil is superposed on the base, and a pressure of 5 to 50 MPa and a temperature of 70 to 180 ° C are used, and a vacuum press or the like is used for heating, whereby a top surface can be manufactured on the base. A metal clad laminate having a metal coating layer or a top metal coating layer and a bottom metal coating layer. The metal foil at this time is not particularly limited, and copper, nickel, gold, palladium, silver or the like can be used, and from the viewpoint of electrical and economic efficiency, copper foil is preferably used.

‧Electrical connection forming step

In the electrical connection portion forming step, the top metal cladding layer is formed on at least two electrical connection portions to be electrically connected to the optical semiconductor element. For example, a base (printed wiring board) having an electrical connection portion can be obtained by processing a top metal coating layer by a method generally used such as a removal method or a drilling process.

‧ surface treatment steps

Furthermore, it is preferable that after the step of forming the electrical connection portion and before the step of forming the reflector structure, there is a surface treatment step of performing plasma treatment and/or ultraviolet ozone treatment on the surface of the base. Thereby, the adhesion strength of the formed material (especially the fluorenone resin composition) to the base can be improved.

‧ Reflector structure molding steps

In the step of forming the reflector structure, the reflector structure is formed on the aforementioned base having the electrical connection portion around the optical semiconductor element to be connected by transfer molding or injection molding. Fig. 2 is a view for explaining a step of forming a reflector structure on the surface of the base. 2A is a base before the reflector structure forming step, and FIG. 2B is a base after the reflector structure forming step. As shown in Figure 2C As shown, there is a need for a transfer mold which uses an upper and lower metal mold 11 to fix an electrical connection portion and resin-form the reflector structure 6 to prevent resin burrs of the electrical connection portion 3.

As shown in FIG. 3, after the reflector structure forming step, the cutting step can be performed by cutting. Thereby, a single-sized package 10 for a semiconductor device is manufactured. Further, in the present invention, the package 10 for a semiconductor device may have one semiconductor element carrier portion by singulation in this manner, or may have a plurality of carrier portions without singulation.

[Optical semiconductor device]

The optical semiconductor device of the present invention is produced by supporting an optical semiconductor element on a package for an optical semiconductor device. If it is such an optical semiconductor device, mechanical stability is high, and durability and low interference are high.

An example of the optical semiconductor device of the present invention is shown in Fig. 4 . In Fig. 4, the structure is such that the perforations 7 are disposed under the carrying portions of the optical semiconductor elements 12a, 12b, thereby releasing the heat generated by the wafer. 4A shows an optical semiconductor device 15 in which a lead 14 is connected to a face-up type wafer 12a (optical semiconductor element) and sealed with an inner layer material 13, and FIG. 4B shows a flip chip type wafer. An optical semiconductor device 15 of 12b (optical semiconductor element) and sealed with an inner layer material 13.

This optical semiconductor device can be used as, for example, an illumination device for projection such as an aerospace industry machine or an automobile industry machine requiring high durability and low interference, or an identification signal lamp for externally knowing the presence of a machine. Furthermore, it can also be used for indoor lighting in an ordinary home, and background light such as a liquid crystal.

Next, the method of manufacturing the optical semiconductor device of the present invention and the optical semiconductor device manufactured by the method of manufacturing the optical semiconductor device will be described in detail below, but the present invention is not limited thereto.

That is, the manufacturing method of the optical semiconductor device of the present invention has the steps of: constructing a plurality of optical semiconductor elements on a substrate having an energizing portion, thereby obtaining an optical semiconductor element collecting substrate; and a half-cutting step of the optical The semiconductor element assembly substrate is half-cut, and thus a part of the current-carrying portion is cut so that an electronic circuit for conducting electricity inspection is formed in the optical semiconductor element assembly substrate, and a power-on inspection step is performed to check the current for the power-on inspection electronic circuit to obtain each An optical characteristic information of the optical semiconductor element; a sorting step of sorting the optical semiconductor element using the optical characteristic information; and a full cutting step of performing full cutting on the cutting line of the half cutting step, thereby Since the optical semiconductor element collecting substrate is divided into the respective optical semiconductor devices, a plurality of the optical semiconductor devices separated by the optical characteristic information are obtained.

In this case, as the substrate having the current-carrying portion, a substrate obtained by transferring a resin onto a metal frame or a substrate obtained by transferring a resin onto a printed substrate can be used. In view of heat resistance or durability of the optical semiconductor device, it is desirable to use a fluorenone resin composition or an epoxy resin composition for the resin to be transferred.

Moreover, it is preferable to perform the energization inspection using the optical characteristic detecting means in the energization inspection step. Due to the optical semiconductor element in the power-on inspection step Since the components are arranged on the collective substrate, the steps of arranging the optical semiconductor devices for the next sorting step can be omitted. Further, in the half-cutting step, it is preferable to form an electronic circuit for energization inspection, which has a connection surface to which the power source probe used in the power-on inspection step is connected. In this way, the contact point of the power supply probe for the power supply inspection is designed on the outer peripheral portion of the collective substrate, whereby the workability is further improved.

Further, it is preferable to use a substrate having a groove in a portion cut by the metal frame in the half-cut step as a substrate obtained by transferring a resin onto a metal frame. Thereby, the notch of the molding resin caused by the cut burr or the chipping angle can be prevented.

Moreover, it is preferable to use a substrate in which a resin reinforcing material of three or more layers is impregnated with a resin as a printed circuit board. This fiber-reinforced material may be laminated in a state in which the layers are rotated by 90 degrees with each other. Further, examples of the resin impregnated in the fiber-reinforced material include an anthrone resin or an epoxy resin. Preferably, the heat resistance or ultraviolet light resistance of the printed substrate is strong by using an fluorenone resin. The optical semiconductor device manufactured using this printed circuit board is also excellent in heat resistance and ultraviolet light resistance.

Further, preferably, in the full cutting step, a cutting blade having a width different from the width of the cutting blade used in the half cutting step is used. Thereby, the optical semiconductor device can also be completely granulated when a positional shift occurs in the half-cutting step or the full-cutting step. At this time, from the viewpoint of ensuring miniaturization of the collective substrate or insulation between the PNs, it is desirable to use a cutting blade having a width smaller than that of the cutting blade which is also used in the half-cutting step in the full cutting step.

In the optical semiconductor device manufactured by the above-described manufacturing method, there is a cut groove portion caused by half cutting. Sticky to the outer substrate The material (solder) enters the groove portion, whereby the adhesion of the optical semiconductor device to the external substrate can be dramatically improved.

Further, in the energization inspection step, the optical characteristic detecting optical lens is disposed corresponding to each optical semiconductor element, and optical characteristic information is obtained. For example, a plurality of optical lenses that detect optical characteristics can be prepared, and an optical lens group that matches the arrangement pitch and shape of the optical semiconductor element collective substrate can be used. By using this optical lens group, optical characteristic information generated by a plurality of optical semiconductor elements can be detected at one time. Further, it is desirable that the front end of the optical lens is in the shape of a cavity enclosing the optical semiconductor element. The reason for this is that by arranging the respective optical semiconductor elements in the shape of the cavity, it is possible to block and measure the influence of light generated by the other optical semiconductor elements.

Hereinafter, embodiments of the present invention will be described in detail based on the drawings. Fig. 5(A) is a cross-sectional view of an optical semiconductor device using a metal frame 201 (also referred to as a metal wire frame). FIG. 5(B) is a cross-sectional view of the optical semiconductor device using the printed substrate 202. In addition, FIG. 5 shows an example in which the optical semiconductor device of the present invention is used, and the method of manufacturing the optical semiconductor device of the present invention can be changed by changing the pad or the pad bonding portion of the substrate. A wafer type or vertical type optical semiconductor element corresponds. Further, even when the number of spacers of the optical semiconductor device is two or three, it is possible to correspond to the arrangement of the adjustment pad joints.

An example of the wafer type optical semiconductor device 203 is shown in FIG. 5(A). The substrate 204 having the energizing portions 205 and 205' (electrodes, external connection terminals) can be manufactured by molding a molded article 208 by transferring a composition mainly composed of an anthrone resin on the metal frame 201, and the electrode 205 is formed. These are a pair of electrodes formed on both surfaces of the substrate 204, and the electrode 205 on the bottom surface side of the substrate 204 is an external connection terminal 205'. Further, the optical semiconductor element 206 may be a blue or ultraviolet optical semiconductor element and carried on the substrate 204 so as to be wired with each of the electrodes 205 by a bonding wire 207 such as Au-Al. Further, when the optical semiconductor element is of a flip chip type, it may be a wiring of gold bumps. The molded article (reflector) 208 is molded by transfer molding and surrounds the optical semiconductor element 206. A sealing resin (anthracene resin) 209 seals the inside of the cavity of the molded product (reflector) 208 of the optical semiconductor device 203. A phosphor may be contained in the sealing resin 209. The groove portion 210 is a groove formed by half cutting. Further, the optical semiconductor device when the printed circuit board 202 of FIG. 5(B) is used has the same configuration, and the top surface and the bottom surface of the printed substrate 202 can be electrically connected by the through holes 211. Further, when the substrate having the current-carrying portion is a substrate on which the resin is injection-molded on the metal frame 201, the metal frame 201 is an energized portion; when a substrate on which the resin is transferred onto the printed substrate 202 is used, A metal coating layer or the like formed on the printed circuit board 202 by printing or the like is an energizing portion.

FIG. 6 shows an example of the optical semiconductor element collecting substrate 212 in a schematic front view. The optical semiconductor device 203 is manufactured by completely cutting the optical semiconductor element assembly substrate 212 called MAP (Matrix Array Package) shown in FIG. 6 . Further, the optical semiconductor element collecting substrate 212 can be obtained by arranging a plurality of optical semiconductor elements on a substrate having an energizing portion. The substrate 204 having the energization portion is obtained by resin molding the molded article 208 by transfer molding to the metal frame 201 which can carry the plurality of optical semiconductor elements 206. It is desirable that the molded article 208 is composed of an oxime resin composition and contains a metal oxide to enhance reflectance.

As shown in FIG. 7 , in the optical semiconductor element assembly substrate 212, a part of the current-carrying portion of the substrate 204 is cut by half-cutting, whereby an electronic circuit for conducting electricity inspection is formed in the optical semiconductor element collecting substrate 212. In addition, by connecting the connection surface 215 of the power supply test power supply probe provided in the optical semiconductor element assembly substrate 212 to the power supply, an electric current can be applied to the electronic circuit for power-on inspection and carried on the optical semiconductor element assembly substrate. In the state above 212, the optical characteristics of the optical semiconductor element 206 are inspected. At the time of this energization check, as the optical characteristics, in particular, whether or not lighting, beam value, chromaticity, color temperature, wavelength spectrum, color rendering property, and the like are confirmed, and then a sorting step is performed.

Here, a method of fabricating the power-on inspection electronic circuit 213' in the optical semiconductor element collecting substrate 212 will be described with reference to FIG. FIG. 8 is a view exemplarily showing the energizing portion 213 and the optical semiconductor element 206 in which the optical semiconductor element 206 is arranged in the 3 × 3 optical semiconductor element collecting substrate 212. FIG. 8A is an optical semiconductor element assembly substrate 212 before half cutting. 8B to 8D show that the series electronic circuit 213' of three columns (B) - three optical semiconductor elements can be formed on the optical semiconductor element collective substrate 212 according to the position and length of the half-cut line 214, and three columns are produced ( C) - a parallel electronic circuit 213' of three optical semiconductor elements, and an example of (D) - an electronic circuit 213' in which three series electronic circuits of three optical semiconductor elements are connected in parallel. The power supply inspection electronic circuit 213' can apply a direct current supply (DC supply) to apply a current from the connection surface 215 to which the power supply probe is connected, thereby obtaining optical characteristic information of each optical semiconductor element 206.

Further, in the half-cut state, the optical semiconductor device 203 is connected by the resin molding portion of the substrate, and the optical semiconductor element assembly substrate 212 remains intact. kind. Thereafter, the optical semiconductor device 203 is completely granulated by the full cutting step. At this time, in the full cutting step, a cutting blade having a width different from the width of the cutting blade used in the half cutting step is used, whereby when the positional shift occurs in the full cutting step or the half cutting step, it is also possible to completely separate the single particles. Chemical.

FIG. 9 shows the adhesion of the optical semiconductor device 203 manufactured by the present invention to the external substrate 219. In the optical semiconductor device 203, there is a trench 210 caused by half-cutting, and a conductive adhesive 217 represented by solder is disposed in the trench. By arranging the adhesive material 217 in the trench 210, the adhesion strength between the optical semiconductor device 203 and the external substrate 219 can be improved.

In Fig. 10, a power-on inspection method and an optical characteristic detecting device 220 used in the present invention are shown. In FIG. 10, the optical characteristic detecting optical lens group 218 which matches the arrangement pitch of the optical semiconductor element 206 of the half-cut optical semiconductor element assembly substrate 212 is used. By using this optical lens group 218, a plurality of optical semiconductor elements can be sorted at a time, thereby reducing the sorting workload.

In FIG. 11, the manufacturing flow of the optical semiconductor device 203 using the substrate 204 in which the resin is injection-molded on the metal frame 201 is shown. FIG. 12 shows a manufacturing flow of the optical semiconductor device 203 using the substrate 204 on which the resin is transferred onto the printed substrate 202.

First, the optical semiconductor element assembly substrate 212 shown in FIG. 6 is produced. The optical semiconductor element collecting substrate 212 is obtained by, for example, arranging an optical semiconductor element on a substrate 204 having an energizing portion and sealing it with, for example, an anthrone resin containing a phosphor. As shown in FIG. 11A and FIG. 12A, a material for plating of Ag, Au, Pd, Ni, or the like is applied to the metal frame 201 or the printed substrate 202 to A substrate 204 having an energized portion is fabricated. Then, as shown in FIG. 11B and FIG. 12B, the resin is transferred onto the metal frame 201, or the resin is transferred onto the printed substrate 202, whereby the substrate 204 having the conductive portion is produced. At this time, it is preferable that the molding resin containing a metal oxide is transferred onto the metal frame 201 or the printed substrate 202. Further, when the metal frame 201 is used, it is desirable that a part of the metal frame 201 is formed with a groove, and in particular, in order to prevent a gap of the resin caused by cutting a burr or a chipping, a groove is formed on the cutting line on which the full cutting step or the half cutting is performed. Moreover, in consideration of heat resistance and durability, it is desirable that the printed substrate 202 be a substrate obtained by impregnating a glass fiber material 216 with an fluorenone resin or an epoxy resin (see FIG. 5B).

Further, it is preferable to arrange a matching pad joint portion to prepare an electronic circuit of a half-cut step to be described later. Further, by using the fluorenone resin composition in the molding resin, heat resistance or ultraviolet ray resistance of the optical semiconductor device can be improved. Further, when an epoxy resin composition is used in the molding resin, the strength of the optical semiconductor device can be improved. Further, the metal oxide is added as a reflective material, a reinforcing material, and a heat dissipating material.

In Figs. 11C and 12C, a construction step of forming a plurality of optical semiconductor elements 206 on a substrate 204 having an energizing portion and obtaining an optical semiconductor element collecting substrate 212 is shown. In the package, Au-Sn, solder, conductive paste, resin adhesive, and gold bumps may be used, and it is desirable to apply electricity to the substrate for improving the adhesion strength between the substrate and the optical semiconductor before the mounting. Pulp treatment or UV ozone treatment. After the optical semiconductor element is mounted on the substrate, wire bonding of the Au wire is performed as needed.

Thereafter, as shown in FIGS. 11D and 12D, a resin containing a phosphor or the like is used. The optical semiconductor element 206 resin is sealed. At this time, it is desirable to use an fluorenone resin in the sealing resin 209 in order to improve heat resistance or durability, and it is preferable that the fluorenone resin contains a phosphor and an additive. In this case, the additive is not particularly limited, and refers to a material such as cerium oxide used for viscosity adjustment or light scattering. Further, it is desirable to subject the substrate 204 to plasma treatment or ultraviolet ozone treatment before the resin sealing to increase the adhesion strength of the sealing resin 209 and the molded body 208. After the resin is sealed, the optical semiconductor element collecting substrate 212 is completed.

In the optical semiconductor element assembly substrate 212, one side of the optical semiconductor element 206 and the molded article 208 is a surface, and the side of the external connection terminal 205' of the substrate (not shown here) connecting the optical semiconductor device to the outside is a back surface ( Refer to Figure 5). First, as shown in FIG. 11E and FIG. 12E, in the half-cutting step, the back surface of the optical semiconductor element collecting substrate 212 is half-cut, thereby cutting off a part of the conducting portion (half-cut portion 221) so as to be in the optical semiconductor element assembly. An electronic circuit for energization inspection is fabricated in the substrate. At this time, it is desirable that the width of the half-cutting blade is 0.4 to 0.5 mm. By performing the half dicing, the optical semiconductor element collecting substrate 212 can form the electronic circuit for electric conduction inspection while maintaining the shape. Moreover, it is preferable to confirm the arrangement of the pad joints in the substrate in advance in order to produce a target electronic circuit. In the present embodiment, the optical semiconductor device 203 is provided with the pad bonding portions arranged in series.

Thereafter, as shown in FIGS. 11F and 12F, in the energization checking step, the energization inspection electronic circuit is subjected to energization inspection to obtain optical characteristic information of each optical semiconductor element, and then, in the sorting step, the optical characteristic is used. Information to sort optical semiconductor components. For example, the connection surface 215 of the power supply probe for connection to the optical semiconductor element assembly substrate 212 can be connected to the electronic circuit fabricated by the half-cut step. Current is applied, and optical characteristics information is obtained by power-on inspection. In the energization check, it is confirmed not only whether or not the light is turned on, but also the beam value, chromaticity, color temperature, wavelength spectrum, color rendering property, and the like of the integrating sphere or the brightness measuring device, and are mounted on the optical semiconductor element collecting substrate 212 to be directly performed. Sorting of optical semiconductor devices. Moreover, the optical characteristic information is not only used for sorting products, but also for confirming defects in manufacturing or variations in phosphor concentration, and also relating to the quality of inspection in the lifting step.

After the energization inspection, as shown in FIG. 11G and FIG. 12G, in the full cutting step, the entire cutting is performed on the cutting line of the half-cut step, whereby the optical semiconductor element assembly substrate is divided into the respective optical semiconductor devices, and thus it is possible to obtain A plurality of optical semiconductor devices sorted by optical characteristic information. For example, the entire surface of the optical semiconductor element collecting substrate 212 is completely cut so as to be completely singulated, whereby the optical semiconductor device 203 is completed. In this full cutting step, it is preferred that the cutting line produced in the half-cutting step is aligned with the fully-cut cutting line for singulation, and that the width of the cutting blade used in the full-cutting step and the half-cutting step are desired. The cutting blade has a different width. It is particularly desirable that the full-cutting blade width is smaller than the half-cutting blade width in order to ensure miniaturization of the collective substrate or insulation between the PNs.

For example, if in the power-on inspection step and the sorting step, which optical characteristic information is recorded at which position, the semiconductor device can be classified immediately after the full-cutting step.

In the energization inspection, the optical lens group 218 can be detected using an optical characteristic that matches the arrangement pitch of the optical semiconductor elements disposed on the half-cut optical semiconductor element assembly substrate. It is desirable to use a Charge-coupled Device Camera (CCD Camera) as a representative An optical probe for luminance measurement is used as the optical lens group. Further, as shown in Fig. 13, the optical probe is connected to the spectroscope (optical characteristic detecting device 220) via the optical fiber 224 or the like, so that the optical characteristic information of the optical lens corresponding to each semiconductor device can be processed. Also, the front end of the optical lens is a cavity structure 223 surrounding the optical lens 222. By covering the optical semiconductor element with the cavity 223, the light emitted from each optical semiconductor element is not leaked, and optical characteristic information can be measured. Thereby, sorting can be performed without interfering with other optical semiconductor element groups.

[Examples]

Hereinafter, the present invention will be described in more detail by way of examples and comparative examples, but the invention is not limited thereto.

(Example 1)

The phenyl fluorenone resin composition (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name KJR-5547) containing titanium oxide as an inorganic filler is impregnated into glass fibers. Each of the sheets was a sheet of 70 μm, and the resin was hardened to serve as a base. A 75 μm copper layer was thermocompression bonded on the top and bottom surfaces of the abutment. Further, a plated metal coating layer of Ni/Pd/Au was applied to the surface of the copper layer, and two electrical connecting portions were formed on the top surface of the base by an etching step.

The surface of the abutment was subjected to a surface treatment by plasma treatment for 100 W/30 seconds, and a concave-shaped reflector structure was molded using the oxime resin composition on the treated surface by using a transfer mold. An anthrone-based wafer bonding (die bonding) material (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name 632DA-1) is printed on the optical semiconductor component carrying portion of the reflector, and carries a blue LED wafer (American Section) Made by Cree Corporation TR350M series), hardened at 150 ° C for 4 hours. Thereafter, the electrical connection portion was wire-bonded to the blue LED wafer by a gold wire having a diameter of 30 μm.

Then, in a reflector, a yellow fluorescent material and an anthrone resin composition (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name KJR-9022) were coated with a dispenser manufactured by Musashi Engineering Co., Ltd. After the inner layer material, it was thermally hardened at 150 ° C for 4 hours. After the heat curing, it is singulated by a dicing step, thereby obtaining the optical semiconductor device of the present invention.

(Comparative Examples 1, 2)

An optical semiconductor device was produced in the same manner as in Example 1 except that the FR-4 substrate (Comparative Example 1) and the AlN substrate (Comparative Example 2) were used as the base.

Then, the optical semiconductor device produced in Example 1 and Comparative Example 1 to Comparative Example 2 was subjected to a high-temperature and high-humidity electric current test at 85 ° C / 85%, and the change in the initial beam value at 100 h, 500 h, and 1,000 h was confirmed. The results are shown in Table 1. When the initial light beam was made 100%, the optical semiconductor device of Example 1 maintained the light beam of the same level as the optical semiconductor device of the ceramic AlN substrate (Comparative Example 2).

Further, the optical semiconductor device produced in Example 1 and Comparative Example 1 to Comparative Example 2 was subjected to a high-temperature and high-humidity electric current test at 85 ° C / 85%, and the reflectance of the optical semiconductor device at 100 h, 500 h, and 1,000 h was confirmed. The change. The results are shown in Table 2. When the initial reflectance is made 100%, the optical semiconductor device of the first embodiment can maintain the reflectance of the same or higher than that of the optical semiconductor device of the resin, that is, the FR-4 substrate (Comparative Example 1).

Further, the relative dielectric constant of the package for an optical semiconductor device used in Example 1 and the FR-4 substrate used in Comparative Example 1 was compared. The relative dielectric constant was measured using a Triplate-line Resonator Method using a network analyzer HP-8722C manufactured by Hewlett-Packard Company at room temperature 25 ° C for 1 GHz. Determination of relative dielectric constant. The results are shown in Table 3. The package for an optical semiconductor device of the present invention has a relative dielectric constant of 3.2, and the previous FR-4 substrate has a size of 5.2. From this, it is understood that the optical semiconductor device using the package for an optical semiconductor device of the present invention has a relative dielectric constant of less than 40%, and thus has low interference.

(Examples 2 and 3)

In the same manner as in the first embodiment, the epoxy resin (Example 2) or the hybrid resin of the fluorenone resin and the epoxy resin (Example 3) was used for the transfer molding. An optical semiconductor device is fabricated.

The optical semiconductor device experimentally produced in the second to third embodiments was subjected to a high-temperature and high-humidity electric current test at 85 ° C / 85%, and the change in the initial beam value at 100 h, 500 h, and 1,000 h was confirmed. The results are shown in Table 4. It can be seen that since the durability of the base is high, both of them have no large beam drop, which is good.

Further, since the package for an optical semiconductor device which was experimentally produced in Examples 1 to 3 contains a fiber reinforcing agent, the mechanical stability is high.

(Example 4)

A substrate of a Cu substrate having a thickness of 0.25 mm (Tamac 194 manufactured by Mitsubishi Shindoh Co., Ltd.) was used, and a joint portion in which the liner and the liner were indirectly formed was formed by an etching step, and Ni/Ni was applied. Pd/Au plated metal wire frame. Use this substrate in plasma processing The surface of the base surface was subjected to surface treatment at 50 W/60 seconds, and the surface of the base was subjected to resin molding by a transfer molding machine to prepare a substrate having an electric conduction portion.

The fluorenone-based wafer bonding material (manufactured by Shin-Etsu Chemical Co., Ltd.: trade name 632DA-1) is printed and applied in a concave portion (reflector) formed in the above molding, and carries a blue LED chip (TR350M series manufactured by Cree, USA). Hardened at 150 ° C for 4 hours. Thereafter, wire bonding was performed using a gold lead of 30 μm.

After that, the inner layer material of the yellow phosphor and the fluorenone resin (manufactured by Shin-Etsu Chemical Co., Ltd., trade name: KJR-9022) was applied by a distributor of a Musashi engineering machine, and then thermally cured at 150 ° C for 4 hours. An optical semiconductor element assembly substrate. Thereafter, a half-cut step of a dicing blade having a thickness of 0.4 mm was performed on the back surface of the produced collective substrate, and the energized portion was cut so that an electronic circuit in which 10 series of 20 optical semiconductor elements were connected in parallel was fabricated on the collective substrate. Optical connection information was obtained by connecting 50 mA to the connection surface of the energization probe provided on the outer peripheral portion of the collective substrate, and performing energization inspection by the integrating sphere. Thereafter, the collective substrate can be singulated in a full cutting step of a cutting blade of 0.2 mm, thereby obtaining 200 optical semiconductor devices sorted by optical characteristic information. Since it is not necessary to sort the optical semiconductor device after the single granulation, a plurality of optical characteristic information can be obtained at a time, so that the steps are simplified and the production efficiency is improved. And the production costs are also reduced.

(Example 5)

The build-up 3 layer will contain alumina as a metal oxide (manufactured by Admatechs (Admatechs Co., Ltd.): trade name AO-502) The addition-hardening type phenyl modified ruthenium composition (manufactured by Shin-Etsu Chemical Co., Ltd.) is a 70 μm sheet each of which is impregnated into glass fibers, and is used as a base to form a 75 μm copper layer on the surface and the bottom surface thereof. And a plated metal coating on which Ni/Pd/Au has been applied to the surface. Thereafter, a connection region is formed in the etching step to fabricate a printed substrate having an energization portion. Thereafter, an optical semiconductor device was obtained by the same transfer molding step, half-cut step, energization inspection step, sorting step, and full-cut step as in Example 4. Since it is not necessary to perform a sorting step on the optical semiconductor device after the single granulation, a plurality of optical characteristic information can be obtained at a time, so that the steps are simplified and the production efficiency is improved. In addition, production costs are also reduced.

(Example 6)

An optical semiconductor device using a vertical optical semiconductor (vertical) and a flip chip type optical semiconductor element was produced in the same manner as the manufacturing method described in the fourth embodiment. As a result, in the same manner as in the fourth embodiment, the steps were simplified and the production efficiency was improved.

(Example 7)

The optical semiconductor device produced in Example 4 was adhered to FR-4 (external substrate) using solder. After that, the thermal shock test was performed on the adhesion of the optical semiconductor device to the FR-4 (external substrate) (TSE-11-A manufactured by Espec Corporation), and the investigation was carried out at -40 ° C to 150 ° C. Next, the energization was performed for 500 cycles and 1,000 cycles. The results are shown in Table 5. As shown in Table 5, it is understood that the optical semiconductor device maintains a good adhesion to the external substrate and does not cause a non-lighting.

[table 5]

(Comparative Example 3)

Then, an optical semiconductor element assembly substrate was produced in the same manner as in Example 4, and only the full-cut step was performed without performing the half-cut step, the power-on inspection step, and the sorting step, thereby fabricating an optical semiconductor device. Thereafter, the optical semiconductor device after the singulation is arranged on the substrate by an adhesive, and the electric current inspection is performed, and the optical characteristic information is sorted based on the optical characteristic information. With such a manufacturing method of the optical semiconductor device, the steps are complicated, and the production efficiency is reduced by about 20% as compared with the fourth embodiment. And the production cost also increases.

Further, the present invention is not limited to the above embodiment. The above-described embodiments are exemplified, and those having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same effects are included in the technical scope of the present invention.

3‧‧‧Electrical connection

6‧‧‧Reflect structure

10‧‧‧Package for optical semiconductor devices

Claims (21)

A package for an optical semiconductor device, characterized in that at least two electrodes to be electrically connected to an optical semiconductor element are provided on a top surface of a base on which an fluorenone resin composition is impregnated and hardened in a fiber-reinforced material An electrical connection portion and a reflector structure surrounding the optical semiconductor element to be connected. The package for an optical semiconductor device according to claim 1, wherein the fiber-reinforced material is glass fiber. The package for an optical semiconductor device according to claim 1, wherein the base is cured by using at least one or more prepregs, and the prepreg is impregnated with the fluorenone resin composition in the fiber reinforced material. The package for an optical semiconductor device according to claim 1, wherein the fluorenone resin composition is a condensation hardening type or an addition curing type fluorenone resin composition. The package for an optical semiconductor device according to claim 1, wherein the electrical connection portion is composed of at least one metal layer. The package for an optical semiconductor device according to claim 1, wherein the base has a bottom metal coating layer on the bottom surface. The package for an optical semiconductor device according to claim 6, wherein the base has at least one or more through holes, and the electrical connection portion of the top surface and the underlying metal coating layer are electrically connected by the through holes. The package for an optical semiconductor device according to claim 1, wherein the reflector structure is formed of any one of an oxime resin, an epoxy resin, and a hybrid resin of an oxime resin and an epoxy resin. The package for an optical semiconductor device according to claim 1, wherein the base has a relative dielectric constant of 5.0 or less at 25 ° C and 1 GHz. A method for producing a package for an optical semiconductor device, which is a method for producing a package for an optical semiconductor device, comprising the steps of: fabricating a ketone resin composition and impregnating the fiber reinforced material by a step of fabricating a base a base metal; a top metal coating layer forming step, forming a top metal coating layer on the top surface of the base; and an electrical connection forming step of forming the top metal coating layer to be electrically connected to the optical semiconductor component And at least two electrical connection portions of the connection; and a reflector structure forming step, on the aforementioned base having the electrical connection portion, by transfer molding or injection molding to surround the optical semiconductor component to be connected In a way, the reflector structure is shaped. The method of manufacturing a package for an optical semiconductor device according to claim 10, further comprising a surface treatment step after the step of forming the electrical connection portion and before the step of forming the reflector structure, the surface treatment step being The surface of the stage is subjected to plasma treatment and/or ultraviolet ozone treatment. An optical semiconductor device manufactured by carrying an optical semiconductor element on a package for an optical semiconductor device according to any one of claims 1 to 9. A method of manufacturing an optical semiconductor device, characterized in that the method of manufacturing an optical semiconductor device has the following steps: a step of constructing a plurality of optical semiconductor elements on a substrate having an energizing portion, thereby obtaining an optical semiconductor element collecting substrate; a half-cutting step of half-cutting the aforementioned optical semiconductor element assembly substrate After cutting, a part of the energization portion is cut so as to form an electric circuit for conducting electric current inspection in the optical semiconductor element assembly substrate, and an electric current inspection step is performed to perform electric current inspection on the electric current inspection electronic circuit to obtain each of the foregoing optical semiconductor elements. Optical characteristic information; a sorting step of sorting the optical semiconductor element using the optical characteristic information; and a full cutting step of performing full cutting on the cut line of the half-cutting step, thereby concentrating the optical semiconductor element Since the substrate is divided into the respective optical semiconductor devices, a plurality of the optical semiconductor devices separated by the optical characteristic information are obtained. The method of manufacturing an optical semiconductor device according to claim 13, wherein in the energization inspection step, the optical characteristic inspection device is used to perform the energization inspection. The optical semiconductor device manufacturing method according to claim 13, wherein in the energization inspection step, an optical characteristic detecting optical lens is disposed corresponding to each of the optical semiconductor elements, and the optical characteristic information is obtained. The method of manufacturing an optical semiconductor device according to claim 13, wherein the substrate having the current-carrying portion is formed by transferring a resin onto a metal frame or by transferring a resin onto a printed substrate. Substrate. The method of manufacturing an optical semiconductor device according to claim 16, wherein the substrate having the groove in the portion cut by the metal frame in the half-cutting step is used as a resin injection molding on the metal frame. The substrate. The method of producing an optical semiconductor device according to claim 16, wherein a substrate obtained by impregnating a fiber-reinforced material having three or more layers of a resin is used as the printed circuit board. The method of manufacturing an optical semiconductor device according to claim 13, wherein in the above-described full cutting step, a cutting blade having a width different from that of the cutting blade used in the above-described half-cutting step is used. The method of manufacturing an optical semiconductor device according to claim 13, wherein in the half-cutting step, the electronic circuit for energization inspection is provided, and the electronic circuit for conducting current inspection has a power supply probe connected to the power-on inspection step. Connection surface. An optical semiconductor device manufactured by the method of manufacturing an optical semiconductor device according to any one of claims 13 to 20.