KR20130093558A - Package for optical semiconductor device and method thereof, optical semiconductor device and method thereof - Google Patents

Abstract

PURPOSE: A package for an optical semiconductor device, the optical semiconductor device, and manufacturing methods thereof are provided to make the optical semiconductor device with high durability and low noises possible by using a base obtained by impregnating silicon resin compounds into a fiber reinforcement material and hardening the silicon resin compounds. CONSTITUTION: At least two electrical connection units (3) are electrically connected to an optical semiconductor device on the upper side of a base. The electrical connection unit is composed of at least one metal layer. The base is formed by impregnating silicon resin compounds into a three-layered fiber reinforcement material. A metal coating layer is formed on the lower side of the base. A reflector structure (6) surrounds the connected optical semiconductor device.

Description

PACKAGE FOR OPTICAL SEMICONDUCTOR DEVICE AND METHOD THEREOF, OPTICAL SEMICONDUCTOR DEVICE AND METHOD THEREOF}

The present invention relates to a package for an optical semiconductor device, a method for manufacturing the same, an optical semiconductor device using the package, and a method for manufacturing an optical semiconductor device.

Optical elements such as LEDs and photodiodes and optical semiconductor devices are widely used in the industry because of their high efficiency and high resistance to external stress and environmental influences. In addition, the optical element and the optical semiconductor device are not only high in efficiency, but also have a long life, a compact size, and can be configured with many other structures, and thus can be manufactured at relatively low manufacturing costs (Patent Documents 1 and 2).

For example, it is generally known to use an epoxy material having a fiber reinforcement represented by FR-4 as the base material on which semiconductor elements are mounted. In particular, in a high output optical semiconductor device that generates a large amount of heat, it is important to use the expectation that is high heat resistance and maintains a high reflectance for a long time.

In addition, in the equipment used in the aerospace industry, the malfunction of the equipment is caused by the noise effect derived from the FR-4 substrate. For this reason, the development of the package for optical semiconductor devices using the low noise base is important.

Japanese Patent Publication No. 2011-521481 Japanese Patent No. 4789350

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems (first object), and an optical semiconductor device package, a method for manufacturing the same, and a method for manufacturing the optical semiconductor device having high mechanical stability and high durability and low noise. It is an object to provide a used optical semiconductor device.

In addition, an optical semiconductor device manufactured from an aggregated substrate called a matrix array package (MAP) is difficult to conduct current inspection at its manufacturing stage, resulting in a final product shape (an optical semiconductor device that has been singulated). After this, the energization inspection was performed. For this reason, quality problems are not recognized at the manufacturing stage, leading to a decrease in production efficiency.

In addition, the optical semiconductor device needs to be sorted out due to the output of the optical semiconductor device and the concentration imbalance of the phosphor to be sealed. Usually, in the selection process of an optical semiconductor device, although the optical semiconductor device is completely separated into pieces, the selection in the completely separated state requires an additional process, such as an arrangement of an optical semiconductor device, and therefore costs increase. It was causing.

The present invention also solves the above problems (second problem), and provides a manufacturing method of an optical semiconductor device which is efficient in production and can reduce costs, and an optical semiconductor device manufactured by the manufacturing method. It is also intended to.

MEANS TO SOLVE THE PROBLEM In order to solve the said 1st subject, in this invention, the package for optical semiconductor devices WHEREIN: At least electrically connected with an optical semiconductor device in the upper surface of the base hardened | cured by impregnating a silicone resin composition to the fiber reinforcement material, and hardening it. Provided are a package for an optical semiconductor device, characterized by having two electrical connection portions and a reflector structure surrounding the connected optical semiconductor device.

With such a package for an optical semiconductor device, an optical semiconductor device having high mechanical stability and high durability and low noise can be realized.

Moreover, it is preferable that the said fiber reinforcement material is glass fiber.

If the fiber reinforcing material is glass fiber, it is expected to exhibit good UV resistance and heat resistance, and thus good adhesion between the fiber reinforcing material and the silicone resin composition is also ensured. In addition, glass fibers are advantageous in terms of cost because they are inexpensive and easy to handle.

Moreover, it is preferable to harden the said base material using at least 1 or more layers of the prepreg which the said fiber reinforcement material impregnated the said silicone resin composition.

Thus, by laminating | stacking one layer or two or more layers of prepregs, thickness can be controlled according to a use, and it becomes more excellent mechanical stability.

In addition, the said silicone resin composition can be made into the condensation-curable type or addition-curable silicone resin composition.

Thereby, the package for an optical semiconductor device excellent in mechanical characteristics, heat resistance, and discoloration resistance and few surface tacks can be obtained easily.

In addition, the electrical connection may be made of at least one metal layer.

This makes the electrical connection part which is cost effective and can be formed by a simple process.

In addition, it is preferable that the base has a bottom metal coating layer on the lower surface, and further, it has at least one or more vias, and the electrical connection portion of the base upper surface and the bottom metal coating layer are electrically connected through the vias.

If it is such an expectation, it will become excellent in heat dissipation, and can connect with another board | substrate by a lower surface metal coating layer. In addition, the via increases design options of the package for the optical semiconductor device, and electrical connection that saves space between the upper and lower surfaces of the expectation can be achieved.

The reflector structure may be molded from one of a silicone resin, an epoxy resin, and a hybrid resin of a silicone resin and an epoxy resin.

By using such a resin, the reflector structure which has high durability and has a high reflectance can be shape | molded easily.

Moreover, it is preferable that the said dielectric constant is 5.0 or less in 25 degreeC and 1 GHz.

With this expectation, lower noise can be achieved.

Moreover, in this invention, the manufacturing method of manufacturing the package for an optical semiconductor device WHEREIN: The base fabrication process which produces the base hardened | cured by impregnating a silicone resin composition to a fiber reinforcement, and the upper surface metal coating layer which forms an upper surface metal coating layer on the said base top surface. On the base having the electrical connecting portion forming step and the electrical connecting portion, the forming step and the upper metal coating layer are formed on at least two electrical connecting portions electrically connected to the optical semiconductor device, and are connected by transfer molding or injection molding. A reflector structure forming step of forming a reflector structure to surround an optical semiconductor device is provided.

With such a manufacturing method of a package for an optical semiconductor device, it is possible to manufacture a package for an optical semiconductor device having high mechanical stability, high durability and low noise easily at low cost.

In addition, it is preferable to have a surface treatment process of plasma treatment and / or UV ozone treatment of the surface of the base after the electrical connection forming process and before the reflector structure forming process.

By having such a surface treatment process, the adhesive strength of a reflector structure can be raised.

In addition, the present invention provides an optical semiconductor device manufactured by mounting an optical semiconductor device on the package for the optical semiconductor device.

Such an optical semiconductor device has high mechanical stability and high durability and low noise.

MEANS TO SOLVE THE PROBLEM In order to solve the said 2nd subject, this invention WHEREIN: As a method of manufacturing an optical semiconductor device, the mounting process of mounting a some optical semiconductor device on the board | substrate which has an electricity supply part, and obtaining an optical-semiconductor device assembly board | substrate, and the said optical semiconductor By half dicing a device assembly board | substrate, a half dicing process which cut | disconnects a part of said electricity supply part, and manufactures the electronic circuit for electricity supply test | inspection in the said optical semiconductor device assembly board | substrate, and an electric circuit for the said electronic circuit for electricity supply test | inspection. An energization inspection step of performing inspection to obtain optical property information of each of the optical semiconductor devices, a sorting step of sorting the optical semiconductor device using the optical property information, and a cut line cut by the half dicing step. By dicing, the optical semiconductor device assembly substrate is divided into individual optical semiconductor devices, and the optical A full dicing step of obtaining a plurality of said optical semiconductor devices sorted by characteristic information is provided.

If it is a manufacturing method of such an optical semiconductor device, productive efficiency will be good and cost can be reduced.

Moreover, it is preferable to carry out an electricity supply inspection in the said electricity supply inspection process using an optical characteristic detection apparatus.

Thereby, for example, the presence or absence of lighting of each optical semiconductor device, the light flux value, the chromaticity, the color temperature, the wavelength spectrum, the color rendering property, and the like can be checked and selected.

Furthermore, in the energization inspection step, it is preferable to arrange the optical lens for detecting the optical characteristic so as to correspond to each optical semiconductor device to obtain the optical characteristic information.

Thereby, since the optical characteristic information of a large quantity of optical semiconductor devices can be obtained by one measurement, the number of processes required for screening the optical semiconductor devices is greatly reduced.

Moreover, the board | substrate which carried the resin transfer molding to the metal frame, or the board | substrate which carried the resin transfer molding to the printed circuit board can be used as a board | substrate which has the said electricity supply part.

The use of such a substrate provides a method of manufacturing an optical semiconductor device that is more efficient in production and can further reduce costs.

Furthermore, it is preferable to use what has a groove | channel in the part which a metal frame is cut | disconnected by the said half dicing process as a board | substrate which transfer-molded resin to the said metal frame.

Thereby, the defect of the molding resin by dicing burr and chipping can be prevented.

In addition, it is preferable to use a substrate impregnated with a resin in a fiber reinforcing material laminated in three or more layers as the printed board.

With such a printed board, an optical semiconductor device resistant to heat resistance and UV resistance can be manufactured.

Moreover, in the said full dicing process, it is preferable to use the dicing blade which has a width different from the dicing blade width used by the half dicing process.

This makes it possible to completely separate the optical semiconductor device even when the positional shift occurs in the half dicing step or the full dicing step.

Moreover, in the said half dicing process, it is preferable to manufacture the electricity supply inspection electronic circuit so that it may have a connection surface which connects the power supply probe used by an electricity supply inspection process.

In this way, workability is further improved by designing the connection surface of the power supply probe to the electronic circuit of the optical semiconductor device assembly substrate.

In addition, the present invention provides an optical semiconductor device, which is manufactured by the method for manufacturing the optical semiconductor device.

In such an optical semiconductor device, since the groove portion is formed by half dicing, it is possible to obtain good adhesive strength by disposing an adhesive material with the external substrate in the groove portion when mounting on the external substrate.

As described above, according to the package for an optical semiconductor device of the present invention, an optical semiconductor device having high mechanical stability and high durability and low noise can be realized by using a base obtained by impregnating and curing the fiber reinforcing material with a silicone resin composition. . By the reflector structure, the initial light flux and the initial reflectance can be maintained. In addition, by providing vias, high heat dissipation can be provided, and high-density mounting of a high output optical semiconductor device is also possible.

Moreover, according to the manufacturing method of the optical semiconductor device of this invention, it is possible to perform an energization test in a manufacturing step, and can improve the completeness of sorting and quality in a manufacturing step using the optical characteristic information obtained at the energization test. Become. For this reason, production efficiency can be improved. In addition, since the conduction inspection is performed on the optical semiconductor device assembly board, processes such as the arrangement of the individual optical semiconductor devices can be eliminated, thereby achieving cost reduction due to the simplification of the manufacturing method.

In the optical semiconductor device manufactured by the manufacturing method, a groove portion formed by half dicing is formed. Therefore, in order to mount the semiconductor element of this invention on an external substrate, favorable adhesive strength can be acquired by arrange | positioning the adhesive material with an external substrate in this groove part.

Further, by arranging a plurality of optical lenses for measurement of the optical characteristic detection device in accordance with the arrangement pitch of the optical semiconductor device of the optical semiconductor device assembly substrate half-dicing in the conduction inspection, a large amount of optical characteristic information can be obtained in one measurement. Therefore, the number of processes required for screening the optical semiconductor device is greatly reduced.

1A is a top view of a package for an optical semiconductor device of the present invention.
1B is a schematic cross-sectional view of a package for an optical semiconductor device of the present invention.
1C is a schematic top view showing the fiber direction of the fiber layer of the fiber reinforcing material in the base.
2A is a top view of a package for an optical semiconductor device before the reflector structure forming step.
Fig. 2B is a top view of the package for an optical semiconductor device of the present invention after the reflector structure forming step.
It is a schematic sectional drawing explaining the reflector structure shaping process.
3 is a schematic diagram of a step of separating the package for an optical semiconductor device of the present invention after the reflector structure forming step.
4A is a schematic cross-sectional view of the optical semiconductor device of the present invention.
4B is a schematic cross-sectional view of another aspect of the optical semiconductor device of the present invention.
5 is a schematic cross-sectional view of the optical semiconductor device of the present invention.
6 is a schematic plan view of the optical semiconductor device assembly substrate.
7 is a schematic perspective view of a half dicing step of the optical semiconductor device assembly substrate.
8 is a schematic plan view of an optical semiconductor device assembly substrate, a schematic plan view showing an example of a half dicing position and an electronic circuit manufacturing method in the optical semiconductor device assembly substrate.
9 is a schematic cross-sectional view of a method for connecting an optical semiconductor device and an external substrate of the present invention.
10 is a schematic plan view of the energization inspection method for the optical semiconductor device assembly substrate.
11 is a flow diagram of a method of manufacturing the optical semiconductor device of the present invention.
12 is a flow diagram of a manufacturing method of another optical semiconductor device of the present invention.
13 is a schematic cross-sectional view of an optical characteristic information detection method of an optical semiconductor device assembly substrate by an optical lens group.

Hereinafter, although the package for optical semiconductor devices of this invention is demonstrated in detail, this invention is not limited to these. As described above, there is a need for an optical semiconductor device package that provides an optical semiconductor device having high mechanical stability and high durability and low noise.

MEANS TO SOLVE THE PROBLEM As a result of earnestly examining in order to achieve the said subject, mechanical stability, high durability, and low noise are simultaneously achieved by the expectation which the fiber reinforcement material impregnated and hardened the silicone resin composition, and has a reflector structure. The inventors found that the initial light flux and initial reflectance of the optical semiconductor device can be maintained, thereby completing the present invention.

That is, this invention is an optical semiconductor device package, At least two electrical connection parts electrically connected with an optical semiconductor device on the upper surface of the base hardened | cured by impregnating a silicone resin composition to a fiber reinforcement, and the optical semiconductor device connected to this are It has a reflector structure surrounding.

(Expectation)

The top view of the package 10 for optical semiconductor devices of this invention is shown in FIG. 1A, and sectional drawing along the AA line in FIG. 1A is shown in FIG. The base 1 is made to impregnate the silicone resin composition 5 in the three layers of the fiber reinforcing materials 2 to cure it. In this way, when the main component is a silicone resin having a low dielectric constant as compared with a conventional epoxy substrate (FR-4 or the like), it has low noise. Moreover, it is a package for an optical semiconductor device which has high heat resistance, no yellowing of expectation in long-term environmental test (high temperature, high humidity test etc.), and maintains high reflectance over a long time. In addition, these expectations are excellent in flexibility and therefore easy to handle.

In case of using a package for an optical semiconductor device in the case of a high output diode (high light output and thus generating a large amount of waste heat) or in an environment where the temperature rises (for example, a headlight near an automobile engine), There are demanding requirements regarding this. If it is the package for optical semiconductor devices of this invention, this request can also be met.

In particular, it is preferable that a dielectric constant is 5.0 or less in 25 degreeC and 1 GHz of expectation. If it is such a dielectric constant, it will become more excellent in low noise.

In addition, the upper surface shape of a base can be made into rectangular shape and square shape, and it is preferable to set it as a flat structure. It is preferable that the thickness of a base is as thin as possible, for example, it has sufficient mechanical stability to the extent that it does not bend by self weight. The thickness of the base 1 is 1 mm or less, Preferably it is 0.6 mm or less, Especially preferably, it is 0.4 mm or less.

Furthermore, as shown in FIG. 2B, the package 10 for an optical semiconductor device has a base 1 having a plurality of optical semiconductor device mounting portions (at least two electrical connections 3 electrically connected to the optical semiconductor device). It can take the form of a large-area printed circuit board. In addition, before or after the installation of the optical semiconductor device, the package for the optical semiconductor device may be divided into smaller individual units.

(Silicone resin composition)

Since silicone resin has high heat resistance, high durability, low dielectric constant, and low noise, it is very suitable as a constituent material of a base. Although it does not restrict | limit especially as a silicone resin composition, As curable silicone resin composition, an addition hardening type or a condensation hardening type silicone resin composition is preferable. If it is such a silicone resin composition, it can be shape | molded easily also in the conventional shaping | molding apparatus, and it is easy to obtain the expectation which is excellent in the mechanical characteristic, and the surface tack is few. Furthermore, the package for an optical semiconductor device excellent in mechanical characteristics, heat resistance, and discoloration resistance and few surface tacks can be obtained easily.

When using the silicone resin composition which is solid at room temperature as described in Unexamined-Japanese-Patent No. 2010-89493, in particular, the said silicone resin composition is impregnated into a fiber reinforcement in the state dissolving and disperse | distributing to a solvent, and the said After evaporating off the solvent, the composition is in an A stage and becomes solid. Therefore, the prepreg in which the silicone resin composition is impregnated into the fiber reinforcing material becomes easier, and molding in the heat press can be performed more easily, and the shape of the package for an optical semiconductor device can be molded more freely. There is an advantage to that. In addition, the optical semiconductor device of the present invention produced using the package for an optical semiconductor device has a long life due to a small change in wavelength (color tone) and a change in initial light flux or reflectance over time.

In addition, an inorganic filler can be added to a silicone resin composition in this invention. Specifically, aluminum oxide, silica, barium titanate, potassium titanate, strontium titanate, calcium carbonate, aluminum carbonate, magnesium hydroxide, aluminum hydroxide, silicon nitride, aluminum nitride, boron nitride, silicon carbide, and the like are used. You may use these inorganic fillers individually or in combination of 2 or more types.

The shape and particle diameter of this inorganic filler are not specifically limited. The particle diameter of a filler can be 0.01-50 micron normally, Preferably it is 0.1-20 micron.

Although the compounding quantity of an inorganic filler is not specifically limited about the silicone resin composition in this invention, Generally, 1-1000 mass parts can be added with respect to 100 mass parts of resin components in total, and it is 5 to 800 mass parts to add desirable.

In addition to the inorganic filler, one or more additives may be added to the silicone resin composition. As such an additive material, it can take the form of a diffusion medium, a dye, a filter medium, a reflection medium, and a conversion medium, for example, A luminescent dye, a hollow particle, an adhesion promoter, etc. are mentioned. By such an additive material, in particular, the optical behavior of the base, that is, the base can be made to have, for example, reflectivity, transmittance or absorption. By using one or more additives in this way, the design options of the base increase.

(Fiber Reinforcement)

As the fiber reinforcing material, inorganic fibers such as carbon fiber, glass fiber, quartz glass fiber, metal fiber, aromatic polyamide fiber, polyimide fiber, organic fiber such as polyamideimide fiber, further silicon carbide fiber, titanium carbide fiber, boron Any can be used depending on product characteristics, such as fiber and aluminum oxide fiber. Preferred fibers are glass fibers, quartz fibers, carbon fibers and the like. Especially, glass fiber and quartz glass fiber with high insulation are especially preferable. In another aspect, as the fiber reinforcing material, a material which exhibits good adhesion to the silicone resin composition and high mechanical load capacity is particularly preferable. In addition, the fiber reinforcing material preferably has at least the same heat resistance as the silicone resin composition and a low coefficient of thermal expansion.

In particular, when the fiber reinforcing material is glass fiber, it is expected to exhibit good UV resistance and heat resistance. In addition, by using glass fibers, good adhesion between the fiber reinforcing material and the silicone resin composition is ensured. In addition, glass fiber is a material which is inexpensive and easy to handle.

Here, the direction of the fibers 2 'and 2' of the fiber layer of the fiber reinforcing material 2 in a base is shown typically in FIG. As shown in Fig. 1C, the fiber reinforcing material 2 preferably has three or more fibrous layers, more preferably four fibrous layers. In addition, it is preferable that the fibers 2 'and 2' of each layer of the fiber reinforcing material 2 extend along a direction parallel to the main surface of the base 1. Usually, in one fiber layer of a fiber reinforcement material, some fiber is directed in the substantially parallel direction, and the fiber direction is coincident. When the base of electrical insulation is provided with the fiber reinforcement which consists of multiple layers, it is preferable that the fiber direction of each fiber layer rotates 90 degrees with respect to each other. If the fiber reinforcement of expectation is such a multilayer structure, it will become an expectation with more high mechanical stability. Here, "rotating" means that the fiber directions in the individual layers are rotated by 90 ° with each other about an axis perpendicular to the upper and / or lower surfaces of the base 1 (FIG. 1C).

The form of the fiber reinforcing material is not particularly limited, but a laminate such as a roving, a cloth, a nonwoven fabric, or the like, or a chopped strand mat, in which long fiber filaments are woven side by side in a predetermined direction. It is desirable to be able to form.

In addition, a fiber reinforcement material can be made completely enclosed by silicone resin. In this way, if the outer surface of the base is a silicone resin, the step of attaching the electrical connection portion or the lower surface metal coating layer to the base can be simplified. In addition, since the fiber reinforcement is protected by the silicone resin so that metal or metal ions do not reach the fiber, for example, metal ions can be prevented from moving along the fiber.

Electrical connection, bottom metal coating layer

The package 10 for an optical semiconductor device of this invention has the at least 2 electrical connection part 3 electrically connected with an optical semiconductor device on the upper surface of the base 1 (FIG. 1B). Each electrical connection may be designed to connect to the optical semiconductor device via a gold wire or the like, or may be designed to connect to the optical semiconductor device in a flip chip mounting manner.

It is preferable that the base further has a metal coating layer 4 on the lower surface thereof (FIG. 1B). The lower surface metal coating layer is preferably configured to be electrically connected to an external connection portion on which the package for an optical semiconductor device of the present invention is mounted, for example, by soldering or adhesive bonding.

An electrical connection part and a lower surface metal coating layer can be formed using a metal or a metal alloy. Although it does not restrict | limit especially as such a metal or metal alloy, Copper, nickel, gold, palladium, silver, or these alloys are illustrated. In addition, the electrical connection portion and the lower metal coating layer may be formed of a transparent electrically conductive material (for example, an inorganic filler (also known as a transparent conductive oxide (abbreviated as TCO)).

In addition, the electrical connection portion and the lower metal coating layer may be composed of at least one metal layer, and may also be composed of a plurality of layers of a plurality of different metals or metal alloys. For example, it is preferable that the 1st metal layer located in the position closest to an expectation among electrical connection parts is made into a copper layer. The thickness of the first metal layer is preferably 30 or more and less than 150 μm, 30 or more and less than 80 μm, and particularly preferably 30 or more and less than 50 μm. Further, on the first metal layer, at least one second metal layer of nickel, palladium, gold, and silver can be formed. The thickness of these layers is preferably less than 25 μm, particularly preferably less than 5 μm, most preferably less than 2 μm. In particular, when the nickel-gold layer is formed on the copper layer, it is preferably less than 500 nm. Such a second metal layer is highly cost effective and can be formed not only in a simple process but also effectively structured.

The electrical connection portion and the lower metal coating layer are not particularly limited, but may be formed by a printing method, a dip method, vapor deposition, sputtering, or an electroplating method. It is preferable that the surface of the base is roughened in order to ensure good adhesion between these electrical connecting portions and the bottom metal coating layer and the base.

Moreover, it is preferable that the electrical connection part and the lower surface metal coating layer are comprised so that each may be connected with an optical semiconductor device or an external connection part by soldering. In this case, it is preferable that the package for optical semiconductor devices of this invention can endure the thermal stress which arises at the time of a soldering process. If it is such a package for optical semiconductor devices, connection with an optical semiconductor device or an external connection part, for example, will be able to achieve the product yield favorable. At this time, it is preferable that the lower surface metal coating layer is formed with regions electrically insulated from each other in order to connect to the external connection portion. In addition, it is preferable that the electrical connection part and the lower surface metal coating layer cover most of the base surface (for example, 50% or more). Since metals generally exhibit high thermal conductivity, it is possible to form a base showing high thermal conductivity to the outside by forming an electrical connection portion or a lower surface metal coating layer in a large area.

In addition, the base 1 further has at least one or more vias 7, and the electrical connection part 3 on the upper surface of the base 1 and the bottom metal coating layer 4 are electrically connected through the vias 7. It is preferable to be able to make it (FIG. 1B). In FIG. 1B, the lower surface metal coating layer 4 is divided into the lower surface metal coating layer 4a and the lower surface metal coating layer 4b, and the lower surface metal coating layer 4b is larger than the lower surface metal coating layer 4a, and there are many vias. As a result, heat generated from the optical semiconductor device can be efficiently diffused. The via can be a tunnel-shaped hole, for example. This via can be formed by, for example, drilling, laser drilling, or penetrating. By metallizing or filling the inner surface of the via with an electrically conductive material, an electrical connection between the electrical connection and the lower surface metal coating layer can be formed. The vias increase the design options of the package for the optical semiconductor device, thereby achieving a space saving electrical connection between the upper and lower surfaces of the base.

Reflector structure

The package for an optical semiconductor device of this invention has the reflector structure 6 surrounding the optical semiconductor device connected to the upper surface of the base 1 (FIG. 1B). Moreover, according to the objective, a resin molding structure can also be provided also in the lower surface of expectation. In the present invention, the reflector structure is not particularly limited as long as the reflector structure surrounds the optical semiconductor device and reflects light from the optical semiconductor device. The reflector structure may be a groove or a concave structure accommodating the optical semiconductor device. By forming the reflector structure by resin on the surface of a base, the package for high performance optical semiconductor devices with more durable improvement can be made.

In addition, the reflector structure can be molded into one of a silicone resin, an epoxy resin, and a hybrid resin of a silicone resin and an epoxy resin.

Such resin is not particularly limited, but is composed of a thermosetting silicone resin composition, a triazine derivative epoxy resin, an acid anhydride, a curing accelerator, and a thermosetting epoxy resin composition composed of an inorganic filler, or a thermosetting silicone resin and an epoxy resin. A hybrid resin (hybrid resin) composition or the like is preferably used in view of heat resistance and durability. In addition, the selection of the molding resin is preferably performed in accordance with the intended use of the final optical semiconductor device.

As an example of the said thermosetting silicone resin, the condensation hardening type thermosetting silicone resin composition etc. which are represented by the average composition formula (1) as follows are typical. In addition, an addition-curable silicone resin composition can also be used.

R ¹ _a Si (OR ² ) _b (OH) _c O _{(4-abc) / 2} ..... (1)

In the above formula, R ¹ represents an organic group having 1 to 20 carbon atoms which are the same or different, and R ² represents an organic group having 1 to 4 carbon atoms of the same or different type, and 0.8 ≦ a ≦ 1.5, 0 ≦ b ≦ 0.3, and 0.001 ≦ c≤0.5 and 0.801≤a + b + c <2.

As an epoxy resin composition, the thermosetting epoxy resin composition which is a triazine derivative epoxy resin and a 1,3,5-tri eukaryotic derivative epoxy resin is preferable from a viewpoint of heat resistance, light resistance, etc. As an epoxy resin, it is not limited to an acid anhydride as a triazine derivative and a hardening | curing agent, Conventionally well-known epoxy resin, an amine, a phenol hardening | curing agent, etc. may also be used suitably.

Moreover, as a hybrid resin of a silicone resin and an epoxy resin, the copolymer etc. which are formed from the said epoxy resin and the said silicone resin are mentioned.

An inorganic filler can be mix | blended with the composition of the said silicone resin or an epoxy resin. As an inorganic filler to be mix | blended, what is mix | blended with a silicone resin composition, an epoxy resin composition, etc. can be used normally. For example, silica type, such as fused silica and crystalline silica, aluminum oxide, silicon nitride, aluminum nitride, boron nitride, glass fiber, fibrous fillers, such as wollastonite, antimony trioxide, etc. are mentioned. The average particle diameter and shape of these inorganic fillers are not specifically limited.

Titanium dioxide can also be mix | blended with the resin composition used by this invention. Titanium dioxide is mixed as a white coloring material in order to increase the whiteness and improve light reflection efficiency, so that the unit lattice of the titanium dioxide may be either rutile type or anatase type. Moreover, an average particle diameter and a shape are not limited, either. The titanium dioxide can be surface-treated in advance with a hydrous oxide such as Al or Si in order to improve compatibility and dispersibility with a resin or an inorganic filler.

As for the filling amount of titanium dioxide, 2-30 mass% of the whole composition, especially 5-10 mass% are preferable. If it is less than 2 mass%, sufficient whiteness may not be obtained, and if it exceeds 30 mass%, moldability, such as unfilled and a void, may fall.

The reflector structure is formed by the resin molding process (transfer molding or injection molding) of the said package for optical semiconductor devices, and the package for optical semiconductor devices separated into pieces is manufactured through a dicing process after resin molding.

(Method for Manufacturing Package for Optical Semiconductor Device)

The manufacturing method of the package for an optical semiconductor device of this invention is an expectation manufacturing process which produces the base hardened | cured by impregnating a silicone resin composition to a fiber reinforcement, and the upper surface metal coating layer formation process of forming an upper surface metal coating layer on the said upper surface, And an electrical connecting portion forming step of forming the upper metal coating layer on at least two electrical connecting portions electrically connected to an optical semiconductor device, and the optically connected portions by transfer molding or injection molding on the base having the electrical connecting portions. And a reflector structure forming step of forming the reflector structure so as to surround the semiconductor device.

Expectation Production Process

In a base fabrication process, a fiber reinforced material is impregnated and hardened | cured and a base is produced. Production of the base can be carried out by any of the solvent method and the hotmelt method. In the case of the solvent method, a resin varnish obtained by dissolving a silicone resin composition in an organic solvent is prepared, the resin varnish is impregnated in the above fiber reinforcing material, and desolvated by heating to prepare a prepreg. The thickness of a substrate such as a prepreg is determined according to the thickness of the reinforcing fiber or the like to be used, and when the substrate is to be thickened, a lot of reinforcing fibers are laminated.

More specifically, silicon prepreg is obtained by impregnating a glass cloth in the solution or dispersion of a silicone resin composition, and removing a solvent in the drying furnace of 50-150 degreeC, More preferably, 60-120 degreeC. Can be.

In the case of the hot melt method, a prepreg is produced by heating and melting the solid silicone resin composition to impregnate the fiber reinforcing material.

It is preferable to anticipate here and harden | cure, using at least 1 or more layers of the prepreg which the fiber reinforcement material impregnated the silicone resin composition. At this time, the number of prepregs according to the thickness of the insulating layer may be superimposed, pressurized and heated to be expected.

Top metal coating layer forming process

In the upper surface metal coating layer formation process, an upper surface metal coating layer is formed on the base surface produced above. The upper metal coating layer is not particularly limited and can be formed by printing, dipping, vapor deposition, or sputtering. In this case, the metal coating layer may be formed at the same time.

In addition, the upper surface metal coating layer, or the upper surface metal coating layer, and the lower surface metal coating layer on the base, even when the metal foil is superimposed on the base and pressurized and heated using a vacuum press or the like in a pressure range of 5 to 50 MPa and a temperature of 70 to 180 ° C. Metal-clad laminate having a metal can be produced. Although it does not specifically limit as metal foil in this case, Copper, nickel, gold, palladium, silver, etc. can be used, A copper foil is used preferably from an electrical and economical viewpoint.

Electrical connection formation process

In the electrical connection part formation process, this upper surface metal coating layer is formed in at least two electrical connection parts electrically connected with an optical semiconductor device. For example, a base (printed wiring board) having an electrical connection portion can be obtained by processing the upper metal coating layer by a commonly used method such as a subtract method or perforation processing.

Surface treatment process

It is also preferable to have a surface treatment step of plasma treatment and / or UV ozone treatment of the surface of the base after the electrical connection forming step and before the reflector structure forming step. Thereby, the adhesive strength of the material (particularly a silicone resin composition) and a base shape | molded can be improved.

Reflector Structure Forming Process

In the reflector structure forming step, the reflector structure is molded on the base having the electrical connection portion so as to surround the connected optical semiconductor device by transfer molding or injection molding. 2 is a diagram illustrating a reflector structure forming step on a base surface. 2A is an expectation before the reflector structure forming process, and FIG. 2B is an expectation after the reflector structure forming process. As shown in Fig. 2C, in order to prevent the resin burr to the electrical connection part 3, a transfer mold for clamping the electrical connection part with the upper and lower molds 11 and resin-molding the reflector structure 6 is preferable. Do.

As shown in FIG. 3, after the reflector structure forming step, a cutting step by dicing may be performed. As a result, the separated package 10 for a semiconductor device is manufactured. In addition, in the present invention, the package 10 for a semiconductor device may be separated into pieces and have one semiconductor element mounting portion, or may have a plurality of mounting portions without being separated into pieces.

(Optical semiconductor device)

The optical semiconductor device of the present invention is manufactured by mounting an optical semiconductor device in a package for an optical semiconductor device. Such an optical semiconductor device has high mechanical stability and high durability and low noise.

4 shows an example of the optical semiconductor device of the present invention. In FIG. 4, the via 7 is disposed under the mounting portions of the optical semiconductor devices 12a and 12b to emit heat generated from the chip. 4A is an optical semiconductor device 15 in which a face-up chip 12a (optical semiconductor device) is connected with a wire 14 and sealed with an inner material 13, and a flip chip type chip shown in FIG. 4B is shown. An optical semiconductor device 15 in which an optical material of 12b is mounted and sealed with an inner material 13.

This optical semiconductor device can be used, for example, as a sign to inform the outside of the existence of a lighting device or device for the projection of an aerospace industrial device or an automobile industry device requiring high durability and low noise. In addition, it can be used for indoor lighting or liquid crystal backlight in general homes.

Next, although the manufacturing method of the optical semiconductor device of this invention and the optical semiconductor device manufactured by it are demonstrated in detail below, this invention is not limited to these.

That is, the manufacturing method of the optical semiconductor device of this invention is a mounting process which mounts a some optical semiconductor device on the board | substrate which has an electricity supply part, and obtains an optical semiconductor device assembly board | substrate, and by half dicing the said optical semiconductor device assembly board | substrate, A half dicing step of cutting a portion of the energization portion to produce an electronic circuit for conduction inspection in the optical semiconductor device assembly substrate, and conducting an energization inspection for the electronic circuit for conduction inspection to perform each of the optical semiconductor devices. A current conduction inspection step for obtaining optical property information, a screening step for selecting the optical semiconductor device using the optical property information, and a full dicing over the cut line by the half dicing step, thereby collecting the optical semiconductor device assembly A plurality of the optical halves divided by a substrate into individual optical semiconductor devices and selected by the optical property information; It has the full-dicing step to obtain a sieve device.

At this time, the board | substrate which carried the resin transfer molding to the metal frame, or the board | substrate which carried the resin transfer molding to the printed circuit board can be used as a board | substrate which has an electricity supply part. It is preferable to use a silicone resin composition or an epoxy resin composition for resin to be transfer-molded in consideration of heat resistance and durability of the optical semiconductor device.

In the energization inspection step, it is preferable to conduct electricity inspection using an optical property detection device. Since the optical semiconductor device is in a state arranged on the assembly substrate in the conduction inspection step, the step of arranging the optical semiconductor device or the like for the next sorting process can be omitted. On the other hand, in the half dicing process, it is preferable to manufacture the electronic circuit for electricity supply inspection so that it may have a connection surface which connects the power supply probe used for an electricity supply inspection process. Thus, by designing the contact point of the power supply probe for electricity supply inspection to the outer peripheral part of an assembly board | substrate, workability further improves.

In addition, it is preferable to use what has a groove | channel in the part which a metal frame is cut | disconnected by the half dicing process as a board | substrate which transfer-molded resin to the metal frame. Thereby, the defect of the molding resin by a dicing burr and chipping can be prevented.

In addition, it is preferable to use a substrate impregnated with a resin in a fiber reinforcing material laminated in three or more layers as a printed circuit board. This fiber reinforcing material can be laminated | stacked in the state which the layer of each other rotated 90 degrees. Examples of the resin impregnated with the fiber reinforcing material include silicone resins and epoxy resins. Preferably, by using a silicone resin, a printed substrate resistant to heat resistance and UV resistance is obtained. The optical semiconductor device manufactured using this printed board also has excellent heat resistance and UV resistance.

In the full dicing step, it is preferable to use a dicing blade having a width different from the dicing blade width used in the half dicing step. This makes it possible to completely separate the optical semiconductor device even when the positional shift occurs in the half dicing step or the full dicing step. At this time, it is preferable to use a dicing blade which is narrower in width than the dicing blade used also in the half dicing process in a full dicing process by miniaturizing an assembly board | substrate and ensuring insulation between PNs.

In the optical semiconductor device manufactured by the manufacturing method mentioned above, the dicing groove part by half dicing exists. Since the adhesive material (solder) of the external substrate sticks to the groove portion, the adhesion between the optical semiconductor device and the external substrate can be remarkably improved.

Further, in the energization inspection step, it is preferable to arrange the optical lens for detecting the optical characteristic so as to correspond to each optical semiconductor device to obtain the optical characteristic information. For example, a plurality of optical lenses for detecting optical characteristics can be prepared, and an optical lens group can be used in accordance with the arrangement pitch and shape of the optical semiconductor device assembly substrate. By using this optical lens group, optical characteristic information generated from a plurality of optical semiconductor devices can be detected at once. Further, the tip of the optical lens is preferably in the shape of a cavity surrounding the optical semiconductor device. This is because by disposing individual optical semiconductor devices in the cavity shape, it is possible to block and measure the influence of light generated from other optical semiconductor devices.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is described in detail based on drawing. 5A is a cross-sectional view of an optical semiconductor device using a metal frame 201 (also called a metal lead frame), and FIG. 5B is a cross-sectional view of an optical semiconductor device using a printed board 202. FIG. In addition, although the example using a face-up optical semiconductor device is shown in FIG. 5, the manufacturing method of the optical semiconductor device of this invention changes the method of arranging the butt of a board | substrate or the butt junction part, and flip-chip type | mold or vertical type | mold optical It is also possible to cope with semiconductor devices. In the case of two butts or three optical semiconductor devices, it is possible to cope by adjusting the arrangement of the butt joints.

5A, an example of the chip type optical semiconductor device 203 is shown. The board | substrate 204 which has energizing parts 205 and 205 micrometers (electrode, an external terminal) can be manufactured by shape | molding the molding 208 by transferring the composition mainly consisting of a silicone resin to the metal frame 201, The electrode 205 is a pair of electrodes formed on both sides of the substrate 204, and the electrode 205 on the lower surface side of the substrate 204 becomes an external connection terminal 205 ′. The optical semiconductor device 206 can be a blue or UV optical semiconductor device and is mounted on the substrate 204 and wired with bonding wires 207 such as Au-Al between the electrodes 205. It is. In addition, when the optical semiconductor device is a flip chip type, wiring by gold bumps can be made. The molded article (reflector) 208 is molded by transfer molding and surrounds the optical semiconductor device 206. The sealing resin (silicon resin) 209 seals the inside of the cavity part by the molded object (reflector) 208 of the optical semiconductor device 203. The encapsulating resin 209 may include a phosphor. The groove 210 is a groove formed by half dicing. In addition, since the optical semiconductor device in the case of using the printed board 202 of FIG. 5B has the same configuration, the upper and lower surfaces of the printed board 202 can be electrically connected by the vias 211. On the other hand, in the case of using a substrate in which resin is transferred to the metal frame 201 as the substrate 204 having the energization portion, the metal frame 201 is energized and the substrate on which the resin is transferred to the printed circuit board 202 is formed. In the case of use, a metal coating layer or the like formed on the printed circuit board 202 by printing or the like becomes an energizing portion.

6 shows an example of the optical semiconductor device assembly substrate 212 in a schematic front view. The optical semiconductor device 203 is manufactured by fully dicing an optical semiconductor device assembly substrate 212 called a matrix array package (MAP) shown in FIG. 6. In addition, the optical semiconductor device assembly board | substrate 212 can be obtained by mounting several optical semiconductor devices on the board | substrate which has an electricity supply part. The board | substrate 204 which has an electricity supply part can be obtained by carrying out resin molding of the molded object 208 by the transfer molding with respect to the metal frame 201 which can mount the some optical semiconductor device 206. It is preferable that the molded object 208 is comprised from the silicone resin composition, and the metal oxide is included for the purpose of reflectance improvement.

As shown in FIG. 7, a part of the energizing portion of the substrate 204 in the optical semiconductor device assembly substrate 212 is cut by half dicing, so that the electrons for conduction inspection in the optical semiconductor device assembly substrate 212 are cut. Build the circuit. Then, a current is applied to the electronic circuit for conduction inspection by connecting the power supply through the connection surface 215 for connecting the power supply inspection probe for power conduction inspection prepared in advance to the optical semiconductor device assembly board 212, thereby providing the optical semiconductor device 206. Can be inspected in a state where it is mounted on the optical semiconductor device assembly substrate 212. At the time of this energization test, as an optical characteristic, the presence or absence of lighting, luminous flux value, chromaticity, color temperature, wavelength spectrum, color rendering property, etc. are specifically confirmed, and a sorting process is performed after that.

Here, a method of manufacturing the electronic circuit 213 'for conduction inspection in the optical semiconductor device assembly board 212 will be described with reference to FIG. 8 is a diagram exemplarily showing a current-carrying portion 213 and an optical semiconductor device 206 of the optical semiconductor device assembly substrate 212 in which the optical semiconductor device 206 is arranged 3x3. 8A is an optical semiconductor device assembly substrate 212 before half dicing. 8B to 8D show three series electronic circuits 213 'of three optical semiconductor devices and three parallel electronic circuits of three optical semiconductor devices due to the difference in the position and length of the half dicing line 214. An example in which an electronic circuit 213 n (3) in which three series (C) of 213 ms) and three series electronic circuits of three optical semiconductor devices are paralleled can be manufactured on the optical semiconductor device assembly board 212. Indicates. The optical characteristic information of each optical semiconductor device 206 can be obtained by applying a current from the connection surface 215 which connects a power supply probe to the electronic circuit 213k of this electricity supply inspection using a DC power supply.

In the half-dicing state, the optical semiconductor device 203 is connected to the resin molding portion of the substrate and remains as the optical semiconductor device assembly substrate 212. Thereafter, the optical semiconductor device 203 is completely separated into pieces in a full dicing step. At this time, by using a dicing blade having a width different from the dicing braid width using the half dicing process in the full dicing process, even when position shift occurs in the full dicing process or the half dicing process, it is completely reorganized. Can be mad.

9 shows a bonding state between the optical semiconductor device 203 and the external substrate 219 manufactured by the present invention. In the optical semiconductor device 203, the groove 210 by half dicing exists, and the conductive adhesive 217 represented by soldering is disposed in the groove. By arranging the adhesive material 217 in the groove 210, the adhesive strength between the optical semiconductor device 203 and the external substrate 219 can be improved.

The energization test method and optical characteristic detection apparatus 220 which are used for this invention in FIG. 10 are shown. In FIG. 10, the optical lens group 218 for optical characteristic detection suited to the arrangement | positioning pitch of the optical semiconductor device 206 of the half-dicing optical semiconductor device assembly board | substrate 212 is used. By using this optical lens group 218, it becomes possible to sort out several optical semiconductor devices at once, and it leads to the reduction of the number of sorting process.

FIG. 11 shows a manufacturing flow of the optical semiconductor device 203 using the substrate 204 in which the resin is transferred to the metal frame 201, and FIG. 12 shows the substrate 204 in which the resin is transferred to the printed circuit board 202. FIG. The manufacturing flow of the optical semiconductor device 203 using this is shown.

First, the optical semiconductor device assembly board | substrate 212 shown in FIG. 6 is produced. The optical semiconductor device assembly board | substrate 212 can be obtained by mounting an optical semiconductor device in the board | substrate 204 which has an electricity supply part, and sealing it with the silicone resin containing fluorescent substance, for example. As shown in Figs. 11A and 12A, in order to fabricate the substrate 204 having the energizing portion, electroplating of Ag, Au, Pd, Ni, or the like on the metal frame 201 or the printed circuit board 202 is performed. Prepare. Next, as shown in Figs. 11B and 12B, the resin is transferred to the metal frame 201, or the resin is transferred to the printed board 202 to produce a substrate 204 having an energization portion. In this case, it is preferable to transfer-mold the molding resin containing the metal oxide to the metal frame 201 or the printed board 202. In addition, when using the metal frame 201, a part of the metal frame 201 is provided with the groove | channel, and the resin defect by dicing burr and chipping is carried out especially on the dicing line which performs a full dicing process or half dicing. In order to prevent this, it is desirable to form a groove. In addition, it is preferable to use the printed board 202 which impregnated the glass fiber material 216 with silicone resin or epoxy resin in consideration of heat resistance and durability (refer FIG. 5B).

Moreover, it is preferable to arrange | position the butt junction part suitable for the objective for electronic circuit preparation by the half dicing process mentioned later. Moreover, heat resistance and UV resistance of an optical semiconductor device can be improved by using a silicone resin composition for molding resin. Moreover, when an epoxy resin composition is used for molding resin, it becomes possible to improve the intensity of an optical semiconductor device. In addition, the said metal oxide is added as a reflector, a reinforcing material, and a heat dissipation material.

11C and 12C show a mounting process in which a plurality of optical semiconductor devices 206 are mounted on a substrate 204 having a current carrying portion to obtain an optical semiconductor device assembly substrate 212. Au-Sn, solder, conductive paste, resin adhesive, and gold bump can be used for mounting, and it is preferable to perform plasma treatment or UV ozone treatment on the substrate for improving the adhesive strength between the substrate and the optical semiconductor before mounting. . After mounting an optical semiconductor device on a board | substrate, wire bonding with Au wire is performed as needed.

Thereafter, as shown in Figs. 11D and 12D, the optical semiconductor device 206 is resin-sealed using a resin or the like containing phosphors. At this time, it is preferable to use a silicone resin for the sealing resin 209 for the purpose of improving heat resistance and durability, and it is preferable that the fluorescent substance and the additive are contained in the silicone resin. In this case, the additive is not particularly limited but is a material for the purpose of viscosity adjustment or light scattering such as silica. In addition, in order to improve the adhesive strength of the sealing resin 209 and the molded object 208 before the resin encapsulation, it is preferable that the substrate 204 is subjected to plasma treatment or UV ozone treatment. After the resin encapsulation, the optical semiconductor device assembly substrate 212 is completed.

The optical semiconductor device assembly board 212 has a surface on which the optical semiconductor device 206 and the molded product 208 exist, and an external connection terminal 205 'connecting the optical semiconductor device to an external substrate (not shown). The side is the back side (refer FIG. 5). First, as shown in FIGS. 11E and 12E, in the half dicing step, half of the back surface of the optical semiconductor device assembly substrate 212 is cut to cut a portion of the energization portion (half dicing portion 221), thereby providing an optical semiconductor. An electronic circuit for conduction inspection is produced on a device assembly board | substrate. At this time, the width of the half dicing blade is preferably 0.4 ~ 0.5mm. By performing half dicing, the optical semiconductor device assembly board | substrate 212 can comprise the electronic circuit for an electricity supply inspection, maintaining the shape. On the other hand, in order to manufacture the target electronic circuit, it is preferable to confirm in advance the arrangement | positioning of the butt junction part of a board | substrate. In this embodiment, the butt junction portion is arranged so that the optical semiconductor devices 203 are arranged in series.

Thereafter, as shown in Figs. 11F and 12F, in the energization inspection step, the energization inspection is performed on the electronic circuit for energization inspection to obtain optical characteristic information of each optical semiconductor device, and then in the selection process, the optical characteristics. The optical semiconductor device is selected using the information. For example, a current is applied to the electronic circuit produced by the half dicing process using the connection surface 215 which connects the power supply probe for electricity supply inspection provided in the optical-semiconductor device assembly board | substrate 212, and is used for the electricity supply inspection. Optical characteristic information can be obtained by this. The energization inspection checks not only the lighting but also the luminous flux value, chromaticity, color temperature, wavelength spectrum, color rendering property, etc. using the integrating device or luminance measuring device, and screens the optical semiconductor device while being mounted on the optical semiconductor device assembly board 212. Is carried out. In addition, the optical property information can be used not only for the selection of products but also for identifying manufacturing problems and imbalances in phosphor concentration, which leads to quality improvement by in-process check.

After the energization inspection, as shown in Figs. 11G and 12G, in the full dicing step, the optical semiconductor device assembly substrate is divided into individual optical semiconductor devices by full dicing over the cut line by the half dicing step, A plurality of optical semiconductor devices selected by the optical property information can be obtained. For example, the optical semiconductor device 203 is completed by performing full dicing from the surface of the optical semiconductor device assembly substrate 212 and completely dividing it. In this full dicing process, it is preferable to combine the dicing line produced by the half dicing process and the dicing line by full dicing for the purpose of individualization, and the dicing blade width used for the full dicing process is half It is preferable that it differs from the dicing blade width of a dicing process. In particular, the width of the full dicing blade is preferably narrower than the width of the half dicing blade for the purpose of miniaturization of the assembly substrate and the insulation between the PNs.

For example, if the optical semiconductor device at which position has what kind of optical characteristic information is recorded in the energization inspection process and the selection process, the semiconductor element can be classified immediately after the full dicing process.

For the energization inspection, the optical characteristic detection optical lens group 218 matched with the arrangement pitch of the optical semiconductor device arranged on the half-dicing optical semiconductor device assembly board | substrate can be used. It is preferable to use the optical probe for luminance measurement represented by a CCD camera as this optical lens group. In addition, as shown in FIG. 13, the optical probe is connected to a spectroscope (optical characteristic detection device 220) through an optical fiber 224 to receive optical characteristic information from optical lenses corresponding to individual semiconductor elements. It becomes possible to process. In addition, the tip of the optical lens has a cavity structure 223 surrounding the optical lens 222. By covering the optical semiconductor device with the cavity 223, it is possible to measure the optical characteristic information without leaking light emitted from each optical semiconductor device. As a result, the screening can be performed without interfering with other optical semiconductor device groups.

Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated in detail, this invention is not limited to these.

(Example 1)

Titanium-based silicone resin composition (Shin-Etsu Chemical Co., Ltd .: trade name KJR-5547) containing titanium oxide as an inorganic filler was laminated with three layers of 70 μm sheets per sheet, impregnated with glass fibers. It hardened and it was expected. A 75 µm copper layer is thermocompressed on the upper and lower surfaces of the base. And the metal coating layer which plated Ni / Pd / Au was formed on the surface of the copper layer, and two electrical connection parts were formed in the base upper surface in the etching process.

The surface of the base was subjected to surface treatment at a plasma treatment of 100 W / 30 sec, and a concave reflector structure was formed on the treated surface using a silicone resin composition by a transfer mold. A silicon-based die bond material (Shin-Etsu Chemical Co., Ltd. product name: 632 DA-1) was stamped and coated on the optical semiconductor device mounting portion in the reflector, and a blue LED chip (TR350M series made by Cree) was mounted and cured at 150 ° C for 4 hours. Then, the wire connection was made between the electrical connection part and the blue LED chip by the gold wire of 30 micrometers in diameter.

Then, the inner material which knead | mixed the yellow fluorescent substance and the silicone resin composition (Shin-Etsu Chemical make: brand name KJR-9022) in the reflector was apply | coated with the dispenser by Musashi Engineering, Inc., and then thermosetted 150 degreeC for 4 hours. . After thermosetting, it separated through the dicing process and obtained the optical semiconductor device of this invention.

(Comparative Example 1, 2)

An optical semiconductor device was manufactured in the same manner as in Example 1, except that the FR-4 substrate (Comparative Example 1) and the AlN substrate (Comparative Example 2) were used as the expectations.

Then, about the optical semiconductor device produced by Example 1 and Comparative Examples 1-2, the high temperature, high humidity energization test of 85 degreeC / 85% was performed, and the fluctuation | variation status of 100 h, 500 h, and 1,000 h initial luminous flux values was confirmed. The results are shown in Table 1. When the initial luminous flux was 100%, the optical semiconductor device of Example 1 maintained the same luminous flux as the optical semiconductor device of the AlN substrate (Comparative Example 2), which is a ceramic.

Furthermore, the high temperature, high humidity energization test of 85 degreeC / 85% was performed about the optical semiconductor devices produced by Example 1 and Comparative Examples 1-2, and the reflectance fluctuation | variation situation of the optical semiconductor devices of 100 h, 500 h, and 1,000 h was confirmed. . The results are shown in Table 2. When the initial reflectance was 100%, the optical semiconductor device of Example 1 was able to maintain the reflectance at or above the same level as that of the optical semiconductor device of the FR-4 substrate (Comparative Example 1), which is a resin.

In addition, the dielectric constants of the optical semiconductor device package used in Example 1 and the FR-4 substrate used in Comparative Example 1 were compared. The dielectric constant was measured by the Triplate strip line resonant method using the network analyzer HP-8722C made by Hewlett Packard, and measured the dielectric constant of 1 GHz at room temperature 25 degreeC. The results are shown in Table 3. The dielectric constant of the package for an optical semiconductor device of the present invention was 3.2, and the conventional FR-4 substrate was 5.2. As a result, it was found that the optical semiconductor device using the package for an optical semiconductor device according to the present invention had a low relative dielectric constant of about 40% and low noise.

(Example 2, 3)

When molding the reflector structure, an optical semiconductor device was fabricated in the same manner as in Example 1 except that an epoxy resin (Example 2) or a hybrid resin (Example 3) of a silicone resin and an epoxy resin was used for transfer molding.

The high temperature, high humidity energization test of 85 degreeC / 85% was performed about the optical semiconductor device started in Examples 2-3, and the fluctuation | variation of 100 h, 500 h, and 1,000 h initial luminous flux values was confirmed. The results are shown in Table 4. Since the durability of a base is high, it turns out that both types do not have a big fall of luminous flux and are favorable.

Furthermore, the package for optical semiconductor devices starting from Examples 1-3 has high mechanical stability because it contains a fiber reinforcing agent.

(Example 4)

A Cu-based substrate (Mitsubishi Shindoh Co., Ltd.) Tamac194) having a thickness of 0.25 mm was used to form a connection portion connecting the pads to the pads through an etching process to form Ni / Pd / Au plating. Manufactured metal leadframe. Using this board | substrate, the base surface was surface-treated in 50 W / 60 second of plasma processing, the resin composition of the silicone composition was performed with the transfer molding machine with respect to the process surface, and the board | substrate which has an electricity supply part was produced.

A silicon die-bonding material (Shin-Etsu Chemical Co., Ltd. product name: 632 DA-1) was stamped and coated into a recess (reflector) formed in the molding, and a blue LED chip (TR350M series made by Cree) was mounted and cured at 150 ° C. for 4 hours. Thereafter, wire bonding was performed with a 30 μm gold wire.

Then, after apply | coating the inner material which knead | mixed the yellow fluorescent substance and silicone resin (made by Shin-Etsu Chemical: brand name KJR-9022) with the dispenser made by Musashi Engineering, it thermosetted 150 degreeC / 4 hours, and produced the optical semiconductor device assembly board | substrate. Then, the back surface of the produced assembly board | substrate performed the half-dicing process of 0.4 mm after a dicing blade, cut | disconnected an electricity supply part, and the electronic circuit which parallel-connected 10 series electronic circuits of 20 optical semiconductor devices to the assembly board | substrate. Made. 50 mA was applied using the connection surface which connects the electricity supply probe provided in the outer peripheral part of an assembly board | substrate, the electricity supply test | inspection by the integrating sphere was performed, and the optical characteristic information was obtained. Subsequently, in the full dicing step of a dicing blade 0.2 mm, the assembly substrate was separated into pieces, so that 200 optical semiconductor devices sorted by optical property information could be obtained. It is not necessary to sort the optical semiconductor device after being separated into pieces, and since a plurality of optical property information can be obtained at one time, the process is simplified and the production efficiency is improved. It also led to a reduction in manufacturing costs.

(Example 5)

A sheet of 70 μm per sheet in which an addition-curable phenyl group-modified silicone composition (manufactured by Shin-Etsu Chemical Co., Ltd.) containing aluminum oxide (Admatechs Co., Inc .: trade name AO-502) as the metal oxide was impregnated into the glass fiber. Three-layer lamination was carried out to form a 75 micrometers copper layer on the upper surface and the lower surface, and the metal coating layer which plated Ni / Pd / Au on the surface. Then, the connection area | region was formed in the etching process, and the printed circuit board which has an electricity supply part was produced. Then, the optical semiconductor device was obtained through the transfer molding process, the half dicing process, the electricity supply inspection process, the sorting process, and the full dicing process similar to Example 4. Since there is no sorting process of the optical semiconductor device after being separated into pieces, and a plurality of optical characteristic information can be obtained at once, the process is simplified and the production efficiency is improved. It also led to a reduction in manufacturing costs.

(Example 6)

As in the manufacturing method shown in Example 4, an optical semiconductor device using a vertical optical semiconductor (vertical type) and a flip chip optical semiconductor device was manufactured. As a result, the process was simplified as in Example 4, and the production efficiency was improved.

(Example 7)

The optical semiconductor device produced in Example 4 and FR-4 (external substrate) were bonded together by soldering. Subsequently, a thermal shock test (TSE-11-A manufactured by Espec) was conducted on the adhesion state between the optical semiconductor device and FR-4 (external substrate), and 500 cycles and 1,000 cycles were performed at -40 ° C to 150 ° C. The energization state in the case of performing a cycle was investigated. The results are shown in Table 5. As shown in Table 5, there was no occurrence of inequality, and it was found that the optical semiconductor device maintained a good adhesion state with the external substrate.

(Comparative Example 3)

Next, the optical semiconductor device assembly board | substrate was produced similarly to Example 4, and only the full dicing process was performed and the optical semiconductor device was produced, without performing a half dicing process, an electricity supply inspection process, and a selection process. Thereafter, the separated optical semiconductor device was arranged on a substrate via an adhesive, conducting electricity supply inspection, and selecting based on the optical characteristic information. In the manufacturing method of such an optical semiconductor device, a process is complicated and production efficiency fell about 20% compared with Example 4. It also increased production costs.

In addition, this invention is not limited to the said embodiment. The said embodiment is an illustration, Any thing which has a structure substantially the same as the technical target idea described in the claim of this invention, and shows the same effect is included in the technical target range of this invention.

Claims (21)

In a package for an optical semiconductor device,
At least two electrical connection portions electrically connected to the optical semiconductor device on an upper surface of the base formed by impregnating the fiber reinforcing material with the silicone resin composition; And
Characterized by having a reflector structure surrounding the connected optical semiconductor device,
Package for optical semiconductor devices.
The method of claim 1,
The fiber reinforcing material is characterized in that the glass fiber,
Package for optical semiconductor devices.
The method of claim 1,
The said base material is hardened | cured using at least 1 or more layers of the prepreg which the said fiber reinforcement material impregnated the said silicone resin composition,
Package for optical semiconductor devices.
The method of claim 1,
The silicone resin composition is a condensation curing type or addition curing type silicone resin composition,
Package for optical semiconductor devices.
The method of claim 1,
The electrical connection portion, characterized in that made of at least one metal layer,
Package for optical semiconductor devices.
The method of claim 1,
The base has a lower surface metal coating layer on a lower surface,
Package for optical semiconductor devices.
The method according to claim 6,
The base has at least one via, and the electrical connection of the upper surface and the lower metal coating layer are electrically connected through the via,
Package for optical semiconductor devices.
The method of claim 1,
The reflector structure is formed of one of a silicone resin, an epoxy resin and a hybrid resin of a silicone resin and an epoxy resin,
Package for optical semiconductor devices.
The method of claim 1,
The expectation is that the dielectric constant is 5.0 or less at 25 ℃, 1 GHz,
Package for optical semiconductor devices.
In the method for manufacturing a package for an optical semiconductor device,
Expectation production process of manufacturing the base hardened | cured by impregnating a silicone resin composition to a fiber reinforcement material;
An upper metal coating layer forming step of forming an upper metal coating layer on the base upper surface;
An electrical connection portion forming step of forming the upper metal coating layer on at least two electrical connection portions electrically connected to the optical semiconductor device; And
And a reflector structure forming step of forming a reflector structure on the base having the electrical connecting portion so as to surround the connected optical semiconductor device by transfer molding or injection molding.
The manufacturing method of the package for optical semiconductor devices.
The method of claim 10,
And a surface treatment step of performing at least one of a plasma treatment and a UV ozone treatment on the surface of the base after the electrical connection forming step and before the reflector structure forming step.
The manufacturing method of the package for optical semiconductor devices.
The optical semiconductor device manufactured by mounting the optical semiconductor device in the package for at least one of Claims 1-9,
Optical semiconductor device.
In the method of manufacturing the optical semiconductor device,
A mounting step of mounting a plurality of optical semiconductor devices on a substrate having a current carrying portion to obtain an optical semiconductor device assembly substrate;
A half dicing step of cutting a part of the energization part by half dicing the optical semiconductor device assembly substrate to produce an electronic circuit for conduction inspection in the optical semiconductor device assembly substrate;
An energization inspection step of conducting energization inspection of the energization inspection electronic circuit to obtain optical characteristic information of each of the optical semiconductor devices;
A sorting step of sorting the optical semiconductor device using the optical property information; And
By full dicing the cut lines by the half dicing step, the full die is obtained by dividing the optical semiconductor device assembly substrate into individual optical semiconductor devices, and obtaining the plurality of optical semiconductor devices sorted by the optical property information. Characterized in that it has a shinging process,
Method of manufacturing an optical semiconductor device.
The method of claim 13,
In the energization inspection step, conduction inspection is performed using an optical characteristic detection device,
Method of manufacturing an optical semiconductor device.
The method of claim 13,
In the energization inspection step, an optical lens for optical characteristic detection is arranged so as to correspond to each of the optical semiconductor devices, so that the optical characteristic information is obtained.
Method of manufacturing an optical semiconductor device.
The method of claim 13,
As the board | substrate which has the said electricity supply part, the board | substrate which carried the resin transfer molding to the metal frame, or the board | substrate which carried the resin transfer molding to the printed circuit board is used, It is characterized by the above-mentioned.
Method of manufacturing an optical semiconductor device.
17. The method of claim 16,
It is a board | substrate which transfer-molded resin to the said metal frame using what has a sphere in the part which the said metal frame is cut by the said half dicing process, It is characterized by the above-mentioned.
Method of manufacturing an optical semiconductor device.
17. The method of claim 16,
A substrate in which a resin is impregnated with a fiber reinforcing material laminated in three or more layers is used as the printing substrate.
Method of manufacturing an optical semiconductor device.
The method of claim 13,
In the full dicing step, using a dicing blade having a width different from the dicing blade width used in the half dicing step,
Method of manufacturing an optical semiconductor device.
The method of claim 13,
In the said half dicing process, the electronic circuit for electricity supply inspection is produced so that it may have a connection surface which connects the power supply probe used by the said electricity supply inspection process,
Method of manufacturing an optical semiconductor device.
It was manufactured according to the manufacturing method of the optical semiconductor device as described in at least one of Claims 13-20, It is characterized by the above-mentioned.
Optical semiconductor device.

Images