JP3783212B2 - Manufacturing method of chip type LED lamp - Google Patents

Manufacturing method of chip type LED lamp Download PDF

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Publication number
JP3783212B2
JP3783212B2 JP2002292520A JP2002292520A JP3783212B2 JP 3783212 B2 JP3783212 B2 JP 3783212B2 JP 2002292520 A JP2002292520 A JP 2002292520A JP 2002292520 A JP2002292520 A JP 2002292520A JP 3783212 B2 JP3783212 B2 JP 3783212B2
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Prior art keywords
lead frame
chip
manufacturing
led lamp
type led
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JP2004128330A (en
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眞孝 鍵和田
勇人 大場
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/29099—Material
    • H01L2224/291—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
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    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/732—Location after the connecting process
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    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a chip LED lamp in which an LED light emitting element is die-bonded with a lead frame by an eutectic joint method beforehand and a resin substrate is made integral with the lead frame by a resin molding method. <P>SOLUTION: In this case, a lead frame 2 and an LED chip 3 are bonded by an eutectic joint method. Namely, the LED chip 3 and the lead frame 2 to which an alloy of Au and Sn is plated are appropriately pressurized and heated by using a bonding machine or the like so as to join them due to an eutectic phenomenon generating between Au and Sn. The heating temperature for bonding is around 350&deg;C, and greatly exceeds a heat resistance temperature of a resin member for forming a resin substrate 4. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、表示灯などとして用いられるＬＥＤランプの製造方法に関するものであり、詳細には、回路基板などへの搭載に適するように、チップタイプと称される形状とされたＬＥＤランプの製造方法に係るものである。
【０００２】
【従来の技術】
従来のチップタイプＬＥＤランプにおいては、回路基板などへの取付けに適するように例えば樹脂など絶縁性部材で形成された樹脂基板が設けられ、この樹脂基板上には例えば金属板、金属箔など導電性部材で適宜形状として形成されたパッド、端子部などが設けられ、前記パッドにはＬＥＤチップがマウントされている。また、前記ＬＥＤチップは湿度による劣化を防止するために透明樹脂によるケースで覆われるものとされている。（例えば、特許文献１）
【０００３】
【特許文献１】
特開平０９−２１４００２号公報（段落「０００２」〜「０００５」、図１４）
【０００４】
【発明が解決しようとする課題】
しかしながら、前記した従来の構成のチップタイプＬＥＤランプにおいては、例えばリードフレームへの樹脂部材の一体成型、あるいは、プリント基板を利用してのエッチング加工などにより樹脂基板とパッドとが一体化されているものであるので、ＬＥＤチップの樹脂基板へのマウント工程を行うに当たっては、樹脂基板が形成された樹脂部材の耐熱温度以上の加熱工程は行えないものとなる。
【０００５】
従って、樹脂基板へのＬＥＤチップのダイボンド工程は、硬化温度が１５０℃程度で良い導電性接着剤であるＡｇペーストによる接着工程となるが、この場合、Ａｇペーストの塗布量が多いと、ＬＥＤチップの側面に回り込む可能性が高くなり、ＬＥＤチップのｐ層とｎ層とに跨る事態を生じて短絡させ、点灯不可能とする問題点を生じる。
【０００６】
また、Ａｇペーストの塗布量が少ないと、接着強度が不足し、後に行われるワイヤボンディング工程時などに生じる応力で、樹脂基板（パッド）とＬＥＤチップとの間に接触不良を生じ、上記の短絡と同様に、点灯不可能とする問題点を生じる。よって、上記の事故を生じないようにするためには、Ａｇペーストの塗布量を極めて厳密に管理できる工程が必要となり、作業が高度化して生産性が低下する問題点を生じている。
【０００７】
【課題を解決するための手段】
本発明は、前記した従来の課題を解決するための具体的手段として、樹脂基板と、該樹脂基板と一体化されるリードフレームとが設けられて成るチップタイプＬＥＤランプの製造方法において、前記リードフレームには予めにＬＥＤ発光素子が共晶結合法によりダイボンドされ、しかる後に前記リードフレームに対する樹脂基板の一体化とランプハウスの成形が同時に樹脂成型法により行われ、その後前記ＬＥＤ発光素子には前記ダイボンドが行われたのと反対の極のリードフレームに対しワイヤボンドが行われ、前記ランプハウス内部に透明樹脂が注入されることを特徴とするチップタイプＬＥＤランプの製造方法を提供することで課題を解決するものである。
【０００８】
【発明の実施の形態】
つぎに、本発明を図に示す実施形態に基づいて詳細に説明する。図１〜図４は、本発明に係るチップタイプＬＥＤランプ１の製造方法を工程の順に示すものであり、先ず、本発明では第一工程としてリードフレーム２へのＬＥＤチップ３のダイボンディングを行うものとしている。
【０００９】
本発明では、このときに前記リードフレーム２とＬＥＤチップ３との接合を共晶接合により行うものであり、即ち、例えばＡｕとＳｎとの合金によるメッキが施されたＬＥＤチップ３とリードフレーム２とは、ボンディングマシンなどにより適宜な加圧、加熱が行われ、Ａｕ、Ｓｎ間に生じる共晶現象により接合させる。尚、このときの加熱温度としては３５０℃程度が必要であり、後に説明する樹脂基板４が形成される樹脂部材の耐熱温度は大きく超える領域となる。
【００１０】
本発明では、上記のようにＬＥＤチップ３がダイボンドされた後のリードフレーム２に対して図２に示すように樹脂基板４の一体化がインサートモールドなど適宜な樹脂成形手段により行われる。尚、このときには、後に防湿を目的として前記ＬＥＤチップ３を封止するために注入される透明樹脂７を保持するためのランプハウス５を同時に形成しても良いものである。また、上記樹脂基板４の成型に当たっては、成型用の金型１０、１１に工夫を凝らすなどして、リードフレーム２上にダイボンドが行われたＬＥＤチップ３に対して応力が加わることのないようにされている。
【００１１】
図３は、ワイヤボンド工程を示すものであり、上記のように樹脂基板４、ランプハウス５が形成された後には、前記ＬＥＤチップ３にはダイボンドが行われたのと反対の極に対し金、あるいは、アルミニウムのワイヤ６による配線、即ち、ワイヤボンドが行われ、ＬＥＤチップ３に対する配線が完了する。よって、この配線が行われた後には、図４に示すように前記ランプハウス５内に透明樹脂７を注入し、加熱などにより硬化を行わせ、更に前記リードフレーム２の切断、成形などを行えば、チップタイプＬＥＤランプ１の製造工程は終了する。
【００１２】
ついで、上記説明の製造方法としたときの作用、効果について説明を行う。先ず、前記リードフレーム２へのＬＥＤチップ３のダイボンド時にＡｇペーストを塗布することをなくし、過剰な塗布によるＬＥＤチップ３のＰ層とＮ層との短絡を生じないものとして歩留まりを向上させる。
【００１３】
同時に、Ａｇペーストを不使用としたことは、前記リードフレーム２の例えば鏡面状などとされている表面処理もＡｇペーストにより覆われる部位がなくなり、前記ＬＥＤチップ３からの光のリードフレーム２に達したものは効率よく照射方向に反射され、チップタイプＬＥＤランプとしての光量が増加するものとなる。
【００１４】
また、共晶接合によるリードフレーム２とＬＥＤチップ３との接合部位は、Ａｇペーストによる接合部位に比べて熱抵抗が低く、これによりＬＥＤチップ３からリードフレーム２へ放熱される熱量が増加してＬＥＤチップ３の冷却効率が向上する。従って、同一定格として使用する場合にはＬＥＤチップ３の延命が可能となり、同一寿命として使用する場合には一層の光量の増加（約１０％）が可能となる。
【００１５】
更には、共晶接合によるリードフレーム２へのＬＥＤチップ３の接合は、Ａｇペーストによる接合に比較して高い接合強度が期待できるものであるので、後に行われるワイヤ６による配線時、あるいは、透明樹脂７の注入時、硬化時などの応力においても接合部位に剥がれなど欠陥を生じる可能性が低く、この面でも歩留まりの向上、製品の信頼性の向上が期待できるものとなる。
【００１６】
図５、図６は本発明に係るチップタイプＬＥＤランプ１の製造方法の別な実施形態であり、前の実施形態では前記ＬＥＤチップ３は、ＧａＰなど１つの組成で全体が形成されたものとして説明と図示を行ったが、本発明はこれを限定するものではなく、例えば、青色発光のＬＥＤチップ３として多く採用されている構成である、ＳｉＣ基板３ａ上に窒化化合物半導体であるＧａＮ発光チップ３ｂを成長させた構成のものであっても良い。
【００１７】
この場合においても前記ＬＥＤチップ３はリードフレーム２に共晶接合で一体化されるものであるが、図５に示すようにＳｉＣ基板３ａの側でリードフレーム２に接合しても良く、あるいは、図６に示すようにＧａＮ発光チップ３ｂの側でリードフレーム２に接合しても良いものであり、この場合、ＧａＮ発光チップ３ｂ（窒化化合物半導体）側で接合したときの方が５０％程度、光量が増加する。
【００１８】
図７は、本発明に係るチップタイプＬＥＤランプ１の製造方法の更に別な実施形態であり、前の実施形態では、ＬＥＤチップ３をダイボンドするときのリードフレーム２の状態については言及するものではなかったが、図７に示すように複数のリードフレーム２が連接された状態、いわゆるフープ状の状態で行われても良いものである。
【００１９】
【発明の効果】
以上に説明したように、本発明により、樹脂基板と、該樹脂基板と一体化されるリードフレームとが設けられて成るチップタイプＬＥＤランプの製造方法において、前記リードフレームには予めにＬＥＤ発光素子が共晶結合法によりダイボンドされ、しかる後に前記リードフレームに対する樹脂基板の一体化とランプハウスの成形が同時に樹脂成型法により行われ、その後前記ＬＥＤ発光素子には前記ダイボンドが行われたのと反対の極のリードフレームに対しワイヤボンドが行われ、前記ランプハウス内部に透明樹脂が注入されることを特徴とするチップタイプＬＥＤランプの製造方法としたことで、第一には、塗布するときの量の過大によりＬＥＤチップのＰ層、Ｎ層間に短絡を生じたり、あるいは、量の不足により取付強度不足を生じるＡｇペーストの使用を不要とし、共晶結晶により一定強度で確実な接合を可能として、チップタイプＬＥＤランプの生産性の向上と、品質の向上とに極めて優れた効果を奏するものである。
【００２０】
また、Ａｇペーストの使用を不要としたことで、Ａｇペーストの塗布により遮蔽されていたリードフレームの面が反射鏡として利用できるものとなるので、従来はＡｇペーストに達して吸収されていた光をリードフレーム２に行う鏡面処理などで反射し照射光として利用することが可能となり、チップタイプＬＥＤランプとしての光量増加が可能となり、性能の向上にも極めて優れた効果を奏する。
【００２１】
更には、リードフレームとＬＥＤチップとの接合を共晶接合としたことで、接合強度も向上し、続くワイヤボンド工程、樹脂注入工程などでのリードフレームとＬＥＤチップとの剥がれなども生じないものとして、信頼性の向上にも極めて優れた効果を奏するものである。
【図面の簡単な説明】
【図１】 本発明に係るチップタイプＬＥＤランプの製造方法の第一工程であるダイボンド工程を示す説明図である。
【図２】 同じく本発明に係るチップタイプＬＥＤランプの製造方法の第二工程である樹脂基板の形成工程を示す説明図である。
【図３】 同じく本発明に係るチップタイプＬＥＤランプの製造方法の第三工程であるワイヤボンド工程を示す説明図である。
【図４】 同じく本発明に係るチップタイプＬＥＤランプの製造方法の第四工程である透明樹脂注入工程を示す説明図である。
【図５】 同じく本発明に係るチップタイプＬＥＤランプの製造方法の別の実施形態におけるダイボンド工程をＳｉＣ基板側で行うときの例で示す説明図である。
【図６】 同じく本発明に係るチップタイプＬＥＤランプの製造方法の別の実施形態におけるダイボンド工程をＧａＮ発光チップ側で行うときの例で示す説明図である。
【図７】 同じく本発明に係るチップタイプＬＥＤランプの製造方法の更に別の実施形態におけるダイボンド工程を示す説明図である。
【符号の説明】
１……チップタイプＬＥＤランプ
２……リードフレーム
３……ＬＥＤチップ
３ａ……ＳｉＣ基板
３ｂ……ＧａＮ発光チップ
４……樹脂基板
５……ランプハウス
６……ワイヤ
７……透明樹脂
１０、１１……金型[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a method of manufacturing an LED lamp used as an indicator lamp or the like, and in particular, a method of manufacturing an LED lamp having a shape called a chip type so as to be suitable for mounting on a circuit board or the like. It is related to.
[0002]
[Prior art]
In a conventional chip type LED lamp, a resin substrate formed of an insulating member such as a resin is provided so as to be suitable for mounting on a circuit substrate or the like, and a conductive material such as a metal plate or a metal foil is provided on the resin substrate. Pads, terminal portions, etc., which are appropriately formed by members are provided, and LED chips are mounted on the pads. The LED chip is covered with a transparent resin case to prevent deterioration due to humidity. (For example, Patent Document 1)
[0003]
[Patent Document 1]
Japanese Unexamined Patent Publication No. 09-214022 (paragraphs “0002” to “0005”, FIG. 14)
[0004]
[Problems to be solved by the invention]
However, in the chip-type LED lamp having the above-described conventional configuration, the resin substrate and the pad are integrated by, for example, integral molding of a resin member on a lead frame or etching using a printed circuit board. Therefore, when performing the process of mounting the LED chip on the resin substrate, the heating process above the heat resistance temperature of the resin member on which the resin substrate is formed cannot be performed.
[0005]
Therefore, the die bonding process of the LED chip to the resin substrate is an adhesion process using an Ag paste which is a conductive adhesive which may have a curing temperature of about 150 ° C. In this case, if the application amount of the Ag paste is large, the LED chip There is a high possibility that the LED will wrap around the side surface of the LED chip, causing a problem of straddling the p-layer and the n-layer of the LED chip, causing a short circuit and making it impossible to light.
[0006]
In addition, when the amount of Ag paste applied is small, the adhesive strength is insufficient, and stress generated during the subsequent wire bonding process or the like causes poor contact between the resin substrate (pad) and the LED chip. Similarly to the above, there arises a problem that lighting is impossible. Therefore, in order not to cause the above-mentioned accident, a process capable of managing the application amount of the Ag paste very strictly is necessary, which causes a problem that the work is advanced and productivity is lowered.
[0007]
[Means for Solving the Problems]
The present invention provides a chip type LED lamp manufacturing method comprising a resin substrate and a lead frame integrated with the resin substrate as a specific means for solving the above-described conventional problems. LED light-emitting element in advance in the frame is die-bonded by eutectic bonding method, molding of the integral and the lamp house of the resin substrate is made of a resin molding simultaneously with respect to the lead frame thereafter, said thereafter the LED light emitting element It is a problem to provide a manufacturing method of a chip type LED lamp, characterized in that wire bonding is performed on a lead frame having a polarity opposite to that on which die bonding is performed, and transparent resin is injected into the lamp house. Is a solution.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Below, this invention is demonstrated in detail based on embodiment shown in a figure. 1 to 4 show a method of manufacturing a chip-type LED lamp 1 according to the present invention in the order of steps. First, in the present invention, die bonding of an LED chip 3 to a lead frame 2 is performed as a first step. It is supposed to be.
[0009]
In the present invention, the lead frame 2 and the LED chip 3 are joined by eutectic bonding at this time, that is, the LED chip 3 and the lead frame 2 plated with, for example, an alloy of Au and Sn. In this case, appropriate pressurization and heating are performed by a bonding machine or the like, and bonding is performed by a eutectic phenomenon generated between Au and Sn. In addition, about 350 degreeC is required as heating temperature at this time, and becomes the area | region where the heat resistance temperature of the resin member in which the resin substrate 4 demonstrated later is formed is exceeded.
[0010]
In the present invention, as shown in FIG. 2, the resin substrate 4 is integrated with the lead frame 2 after the LED chip 3 is die-bonded as described above by an appropriate resin molding means such as an insert mold. At this time, the lamp house 5 for holding the transparent resin 7 injected for sealing the LED chip 3 for the purpose of moisture prevention may be formed at the same time. In molding the resin substrate 4, stress is not applied to the LED chip 3 that is die-bonded on the lead frame 2 by elaborating the molding dies 10 and 11. Has been.
[0011]
FIG. 3 shows a wire bonding process. After the resin substrate 4 and the lamp house 5 are formed as described above, the LED chip 3 is made of gold against the opposite pole to which the die bonding is performed. Alternatively, wiring by the aluminum wire 6, that is, wire bonding is performed, and wiring to the LED chip 3 is completed. Therefore, after this wiring is performed, the transparent resin 7 is injected into the lamp house 5 as shown in FIG. 4 and cured by heating, and the lead frame 2 is cut and molded. For example, the manufacturing process of the chip type LED lamp 1 is completed.
[0012]
Next, the operation and effect of the manufacturing method described above will be described. First, the Ag paste is not applied at the time of die bonding of the LED chip 3 to the lead frame 2, and the yield is improved on the assumption that no short circuit occurs between the P layer and the N layer of the LED chip 3 due to excessive application.
[0013]
At the same time, the fact that the Ag paste is not used is that the surface treatment of the lead frame 2 that is made, for example, mirror-like is not covered by the Ag paste, and reaches the lead frame 2 of the light from the LED chip 3. This is efficiently reflected in the irradiation direction, and the amount of light as a chip-type LED lamp increases.
[0014]
Further, the bonding portion between the lead frame 2 and the LED chip 3 by eutectic bonding has a lower thermal resistance than the bonding portion by the Ag paste, thereby increasing the amount of heat radiated from the LED chip 3 to the lead frame 2. The cooling efficiency of the LED chip 3 is improved. Therefore, when used at the same rating, the life of the LED chip 3 can be extended, and when it is used at the same lifetime, the amount of light can be further increased (about 10%).
[0015]
Furthermore, since the bonding of the LED chip 3 to the lead frame 2 by eutectic bonding can be expected to have a higher bonding strength than the bonding by Ag paste, the wiring 6 is performed later or transparent. Even when the resin 7 is injected or cured, there is little possibility of causing a defect such as peeling at the bonded portion, and in this respect, improvement in yield and improvement in product reliability can be expected.
[0016]
FIG. 5 and FIG. 6 show another embodiment of the manufacturing method of the chip type LED lamp 1 according to the present invention. In the previous embodiment, the LED chip 3 is assumed to be entirely formed of one composition such as GaP. Although described and illustrated, the present invention is not limited to this. For example, a GaN light emitting chip that is a nitride compound semiconductor on a SiC substrate 3a, which is often used as a blue light emitting LED chip 3. It may have a configuration in which 3b is grown.
[0017]
Also in this case, the LED chip 3 is integrated with the lead frame 2 by eutectic bonding, but may be bonded to the lead frame 2 on the side of the SiC substrate 3a as shown in FIG. As shown in FIG. 6, it may be bonded to the lead frame 2 on the GaN light emitting chip 3b side. In this case, about 50% when bonded on the GaN light emitting chip 3b (nitride compound semiconductor) side, The amount of light increases.
[0018]
FIG. 7 shows still another embodiment of the manufacturing method of the chip-type LED lamp 1 according to the present invention. In the previous embodiment, the state of the lead frame 2 when the LED chip 3 is die-bonded is not mentioned. However, it may be performed in a state where a plurality of lead frames 2 are connected as shown in FIG.
[0019]
【The invention's effect】
As described above, according to the present invention, in the chip type LED lamp manufacturing method in which the resin substrate and the lead frame integrated with the resin substrate are provided, the LED light emitting element is previously provided in the lead frame. Is die-bonded by a eutectic bonding method, and then the resin substrate is integrated with the lead frame and the lamp house is simultaneously molded by the resin molding method , and then the LED light-emitting element is opposite to the die-bonding performed. In the manufacturing method of the chip-type LED lamp , wherein wire bonding is performed to the lead frame of the electrode and transparent resin is injected into the inside of the lamp house . An excessive amount causes a short circuit between the P and N layers of the LED chip, or an insufficient amount results in insufficient mounting strength. And unnecessary use of Ag pastes, enable reliable bonding at a constant intensity by eutectic crystal, in which achieve the improvement of the productivity of the chip type LED lamp, a very excellent effect on the improvement of the quality.
[0020]
Further, since the use of the Ag paste is not required, the surface of the lead frame that has been shielded by the application of the Ag paste can be used as a reflecting mirror. It can be reflected and used as irradiating light by the mirror surface treatment performed on the lead frame 2, etc., and the amount of light as a chip type LED lamp can be increased.
[0021]
Furthermore, the bonding strength between the lead frame and the LED chip is improved by eutectic bonding, and the bonding between the lead frame and the LED chip in the subsequent wire bonding process, resin injection process, etc. does not occur. As a result, it has an extremely excellent effect in improving the reliability.
[Brief description of the drawings]
FIG. 1 is an explanatory view showing a die bonding step which is a first step of a manufacturing method of a chip type LED lamp according to the present invention.
FIG. 2 is an explanatory view showing a resin substrate forming step, which is the second step of the method for manufacturing a chip-type LED lamp according to the present invention.
FIG. 3 is an explanatory view showing a wire bonding step which is a third step of the manufacturing method of the chip type LED lamp according to the present invention.
FIG. 4 is an explanatory view showing a transparent resin injection step which is a fourth step of the method for manufacturing a chip-type LED lamp according to the present invention.
FIG. 5 is an explanatory view showing an example when the die bonding step in another embodiment of the chip type LED lamp manufacturing method according to the present invention is performed on the SiC substrate side.
FIG. 6 is an explanatory view showing an example when the die bonding step in another embodiment of the chip type LED lamp manufacturing method according to the present invention is performed on the GaN light emitting chip side.
FIG. 7 is an explanatory view showing a die bonding step in still another embodiment of a method for manufacturing a chip type LED lamp according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Chip type LED lamp 2 ... Lead frame 3 ... LED chip 3a ... SiC substrate 3b ... GaN light emitting chip 4 ... Resin substrate 5 ... Lamp house 6 ... Wire 7 ... Transparent resin 10,11 ……Mold

Claims (5)

樹脂基板と、該樹脂基板と一体化されるリードフレームとが設けられて成るチップタイプＬＥＤランプの製造方法において、前記リードフレームには予めにＬＥＤ発光素子が共晶結合法によりダイボンドされ、しかる後に前記リードフレームに対する樹脂基板の一体化とランプハウスの成形が同時に樹脂成型法により行われ、その後前記ＬＥＤ発光素子には前記ダイボンドが行われたのと反対の極のリードフレームに対しワイヤボンドが行われ、前記ランプハウス内部に透明樹脂が注入されることを特徴とするチップタイプＬＥＤランプの製造方法。In a manufacturing method of a chip-type LED lamp comprising a resin substrate and a lead frame integrated with the resin substrate, an LED light-emitting element is die-bonded in advance by a eutectic bonding method to the lead frame, and thereafter The resin substrate is integrated with the lead frame and the lamp house is simultaneously molded by a resin molding method , and then the LED light emitting element is wire bonded to the lead frame opposite to the die bond. A method for manufacturing a chip-type LED lamp , wherein a transparent resin is injected into the lamp house . 少なくとも前記リードフレームに対する樹脂基板の一体化が行われるまでの時点においては、前記リードフレームはフープ状であることを特徴とする請求項１記載のチップタイプＬＥＤランプの製造方法。2. The method of manufacturing a chip-type LED lamp according to claim 1, wherein the lead frame has a hoop shape at least until the resin substrate is integrated with the lead frame. 前記共晶接合が行われるＬＥＤ発光素子とリードフレームとの接合部分には、Ａｕ−Ｓｎ系合金が用いられることを特徴とする請求項１または請求項２記載のチップタイプＬＥＤランプの製造方法。The method for manufacturing a chip-type LED lamp according to claim 1 or 2, wherein an Au-Sn alloy is used in a joint portion between the LED light emitting element and the lead frame on which the eutectic bonding is performed. 前記ＬＥＤ発光素子がＳｉＣ基板上に成長させた窒化物系化合物半導体であることを特徴とする請求項１〜請求項３いずれかに記載のチップタイプＬＥＤランプの製造方法。The method for manufacturing a chip-type LED lamp according to any one of claims 1 to 3, wherein the LED light emitting element is a nitride compound semiconductor grown on a SiC substrate. 前記ＬＥＤ発光素子とリードフレームとの接合は、前記窒化物系化合物半導体側で行われていることを特徴とする請求項４記載のチップタイプＬＥＤランプの製造方法。5. The method of manufacturing a chip-type LED lamp according to claim 4, wherein the LED light emitting element and the lead frame are joined on the nitride compound semiconductor side.
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