JP2002368165A - Resin-sealed semiconductor device - Google Patents
Resin-sealed semiconductor deviceInfo
- Publication number
- JP2002368165A JP2002368165A JP2001176137A JP2001176137A JP2002368165A JP 2002368165 A JP2002368165 A JP 2002368165A JP 2001176137 A JP2001176137 A JP 2001176137A JP 2001176137 A JP2001176137 A JP 2001176137A JP 2002368165 A JP2002368165 A JP 2002368165A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- resin
- sealing resin
- semiconductor device
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ヒートシンクと、
このヒートシンクの一面側に固定された半導体素子と、
ヒートシンクの他面側を露出させつつヒートシンク及び
半導体素子を包み込むように封止する封止用樹脂とを備
える樹脂封止型半導体装置に関する。[0001] The present invention relates to a heat sink,
A semiconductor element fixed to one side of the heat sink;
The present invention relates to a resin-encapsulated semiconductor device including a heat sink and a sealing resin for enclosing a semiconductor element while exposing the other surface of the heat sink.
【０００２】[0002]
【従来の技術】従来のこの種の半導体装置の一般的な断
面構成について、図１を参照して説明する。Ｃｕ等の放
熱性に優れた材料よりなるヒートシンク１の一面１ａに
は、接着剤や半田等の接続部材３を介して半導体チップ
（半導体素子）２が固定されている。2. Description of the Related Art A general sectional structure of a conventional semiconductor device of this type will be described with reference to FIG. A semiconductor chip (semiconductor element) 2 is fixed to one surface 1a of a heat sink 1 made of a material having excellent heat dissipation properties such as Cu via a connecting member 3 such as an adhesive or solder.
【０００３】半導体チップ２は、リード４にボンディン
グワイヤ５を介して電気的に接続され、そして、ヒート
シンク１の他面１ｂ側を露出させつつヒートシンク１及
び半導体チップ２、更には半導体チップ２とワイヤ５の
電気的接続部が、エポキシ樹脂等よりなる封止用樹脂６
によって包み込むように封止されている。The semiconductor chip 2 is electrically connected to the lead 4 via a bonding wire 5, and the heat sink 1 and the semiconductor chip 2 are exposed while the other surface 1 b of the heat sink 1 is exposed. 5 is a sealing resin 6 made of epoxy resin or the like.
It is sealed so as to enclose it.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の樹脂封止型半導体装置においては、冷熱サイクルが
加わったとき等、ヒートシンク１と封止用樹脂６との間
で、両者の線膨張係数の差により過大な応力が発生し、
その応力により、ヒートシンク１と封止用樹脂６との間
に剥離が生じ、ひいては封止用樹脂６にクラックが発生
する、という問題がある。However, in the above-described conventional resin-encapsulated semiconductor device, the linear expansion coefficient between the heat sink 1 and the encapsulating resin 6 between the heat sink 1 and the encapsulating resin 6 is reduced when a thermal cycle is applied. Excessive stress occurs due to the difference,
Due to the stress, there is a problem that peeling occurs between the heat sink 1 and the sealing resin 6, and eventually cracks occur in the sealing resin 6.
【０００５】そこで、本発明は上記問題に鑑み、封止用
樹脂とヒートシンクとの密着性を向上させることを目的
とする。In view of the above problems, an object of the present invention is to improve the adhesion between a sealing resin and a heat sink.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明では、ヒートシンク（１）
と、このヒートシンクの一面（１ａ）側に固定された半
導体素子（２）と、ヒートシンクの他面（１ｂ）側を露
出させつつヒートシンク及び半導体素子を包み込むよう
に封止する封止用樹脂（６）とを備える樹脂封止型半導
体装置において、ヒートシンクにおける封止用樹脂と接
する接触面が、封止用樹脂との密着性を高めるべく粗化
処理されていることを特徴とする。According to the first aspect of the present invention, a heat sink (1) is provided.
A sealing element (6) for sealing the semiconductor element (2) fixed to one surface (1a) of the heat sink and enclosing the heat sink and the semiconductor element while exposing the other surface (1b) of the heat sink. ), Wherein the contact surface of the heat sink in contact with the sealing resin is subjected to a roughening treatment in order to enhance the adhesion with the sealing resin.
【０００７】それによれば、ヒートシンクにおける封止
用樹脂と接する接触面が、粗化処理によって従来よりも
凹凸度合の大きな面となるため、ヒートシンクと封止用
樹脂との密着性を向上させることができる。[0007] According to this, the contact surface of the heat sink in contact with the sealing resin becomes a surface having a greater degree of unevenness than in the past by the roughening treatment, so that the adhesion between the heat sink and the sealing resin can be improved. it can.
【０００８】また、請求項２に記載の発明では、ヒート
シンク（１）における封止用樹脂（６）と接する接触面
の全てが、封止用樹脂との密着性を高めるべく粗化処理
されていることを特徴とする。それにより、ヒートシン
クと封止用樹脂との密着性を更に向上させることができ
る。According to the second aspect of the present invention, all of the contact surfaces of the heat sink (1) in contact with the sealing resin (6) are subjected to a roughening treatment in order to increase the adhesion to the sealing resin. It is characterized by being. Thereby, the adhesion between the heat sink and the sealing resin can be further improved.
【０００９】ここで、上記粗化処理は、請求項３に記載
の発明のように、被処理面にサンドブラスト処理を行っ
たり、請求項４に記載の発明のように、レーザ照射を行
ったりすることで行うことができる。Here, in the roughening treatment, the surface to be processed is subjected to sandblasting as in the invention according to claim 3, or the laser irradiation is performed as in the invention according to claim 4. That can be done.
【００１０】また、上記粗化処理としては、請求項５に
記載の発明のように、ヒートシンク（１）が型（Ｋ１）
を用いたプレス加工により形成されるものである場合、
型としてその内面を粗化したものを用いてプレス加工を
行うものでも良い。[0010] In the roughening treatment, the heat sink (1) may be a mold (K1).
If it is formed by pressing using
Pressing may be performed using a mold whose inner surface is roughened.
【００１１】さらに、上記粗化処理は、請求項６に記載
の発明のように、ヒートシンク（１）が金属よりなる場
合、被処理面を熱処理して金属を酸化させたものであっ
ても良い。Further, in the roughening treatment, when the heat sink (1) is made of metal as in the invention according to claim 6, the surface to be processed may be heat-treated to oxidize the metal. .
【００１２】なお、上記各手段の括弧内の符号は、後述
する実施形態に記載の具体的手段との対応関係を示す一
例である。Incidentally, the reference numerals in parentheses of the above means are examples showing the correspondence with specific means described in the embodiments described later.
【００１３】[0013]
【発明の実施の形態】以下、本発明を図に示す実施形態
について説明する。図１は、本発明の実施形態に係る樹
脂封止型半導体装置Ｓ１の概略断面図である。なお、本
実施形態の半導体装置Ｓ１は、その概略形状は上述した
一般的な半導体装置と同様であるが、ヒートシンク１に
おける封止用樹脂６と接する接触面が、封止用樹脂６と
の密着性を高めるべく粗化処理されていることが、従来
とは異なるものである。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a first embodiment of the present invention. FIG. 1 is a schematic sectional view of a resin-sealed semiconductor device S1 according to an embodiment of the present invention. Although the semiconductor device S1 of the present embodiment has the same general shape as the above-described general semiconductor device, the contact surface of the heat sink 1 that is in contact with the sealing resin 6 is in close contact with the sealing resin 6. What is different from the conventional one is that the surface is roughened to enhance the performance.
【００１４】図１において、１は、銅等の熱伝導性に優
れた金属等よりなる板状のヒートシンクである。ヒート
シンク１の一面１ａには、半導体チップ（半導体素子）
２が、接着剤や半田等の接続部材３を介して固定されて
いる。半導体チップ２は、銅等よりなるリード４に、金
（Ａｕ）やアルミ（Ａｌ）等よりなるボンディングワイ
ヤ５を介して電気的に接続されている。In FIG. 1, reference numeral 1 denotes a plate-like heat sink made of metal or the like having excellent thermal conductivity such as copper. A semiconductor chip (semiconductor element) is provided on one surface 1a of the heat sink 1.
2 is fixed via a connection member 3 such as an adhesive or solder. The semiconductor chip 2 is electrically connected to a lead 4 made of copper or the like via a bonding wire 5 made of gold (Au) or aluminum (Al).
【００１５】そして、ヒートシンク１の他面１ｂ側を露
出させつつヒートシンク１及び半導体チップ２、ワイヤ
５、及びワイヤ５に接続されたリード４の一部（インナ
ーリード）が、エポキシ樹脂等よりなる封止用樹脂６に
よって包み込むように封止されている。Then, while exposing the other surface 1b side of the heat sink 1, the heat sink 1, the semiconductor chip 2, the wires 5, and a part of the leads 4 (inner leads) connected to the wires 5 are sealed with epoxy resin or the like. It is sealed so as to be wrapped by the stopping resin 6.
【００１６】また、ヒートシンク１においては、図１に
示す様に、半導体チップ２が固定されている側の一面１
ａと封止用樹脂６からの露出面である他面１ｂとの間の
側面１ｃに、突起部（コイニング）１ｄが形成されてお
り、この突起部１ｄが封止用樹脂６に食い込んだ形とな
っているため、ヒートシンク１と封止用樹脂６との密着
性を向上させている。In the heat sink 1, as shown in FIG. 1, one surface 1 on the side where the semiconductor chip 2 is fixed is provided.
A protrusion (coining) 1d is formed on a side surface 1c between the surface a and the other surface 1b exposed from the sealing resin 6, and the protrusion 1d is cut into the sealing resin 6. Therefore, the adhesion between the heat sink 1 and the sealing resin 6 is improved.
【００１７】このようなヒートシンク１は、図２（ａ）
に示す様に、金属板材をプレス加工して断面矩形のヒー
トシンク素材１ｅを形成した後、この素材１ｅの他面１
ｂ側から、型Ｋ１を用いてプレスを行い、ヒートシンク
素材１ｅの端部を変形させることにより、図２（ｂ）に
示す様に、突起部１ｄが形成された形状として作ること
ができる。Such a heat sink 1 is shown in FIG.
As shown in FIG. 1, after a metal plate material is pressed to form a heat sink material 1e having a rectangular cross section, the other surface 1 of the material 1e is formed.
Pressing is performed using the mold K1 from the b side to deform the end of the heat sink material 1e, thereby forming a shape having the protrusion 1d as shown in FIG. 2B.
【００１８】なお、図２（ａ）では、型Ｋ１の内面Ｋ１
１は、ギザギザの荒れた面となっているが、これは、後
述する粗化処理を行うために荒らされたものであり、そ
の荒れ度合をデフォルメして図示してある。In FIG. 2A, the inner surface K1 of the mold K1 is shown.
Reference numeral 1 denotes a jagged rough surface, which has been roughened in order to perform a roughening process to be described later. The roughness is shown in a deformed manner.
【００１９】ここにおいて、本実施形態では、ヒートシ
ンク１における封止用樹脂６と接する接触面が、封止用
樹脂６との密着性を高めるべく粗化処理されていること
を主たる特徴としている。The main feature of the present embodiment is that the contact surface of the heat sink 1 which is in contact with the sealing resin 6 is subjected to a roughening treatment in order to increase the adhesion to the sealing resin 6.
【００２０】上記粗化処理の具体的な方法について述べ
る。まず、図３は、サンドブラストやレーザ照射による
粗化処理方法を示す説明図である。図３（ａ）に示す様
に、サンドブラストやレーザ照射のノズルＫ２の向きを
変えることにより、プレス加工されたヒートシンク１に
おける一面１ａおよび側面１ｃに研磨材やレーザを当
て、被処理面を粗くすることができる。A specific method of the above roughening treatment will be described. First, FIG. 3 is an explanatory diagram showing a roughening treatment method by sandblasting or laser irradiation. As shown in FIG. 3A, by changing the direction of the nozzle K2 for sandblasting or laser irradiation, an abrasive or a laser is applied to the one surface 1a and the side surface 1c of the pressed heat sink 1 to roughen the surface to be processed. be able to.
【００２１】また、図３（ｂ）に示す様に、ヒートシン
ク１の側面１ｃを処理するときには、上記ノズルＫ２の
絞りを、一面１ａの処理時に比べてゆるめ、放射状に噴
射（照射）することで、ノズルＫ２の向きを変えずに、
側面１ｃを粗くすることができる。As shown in FIG. 3B, when the side surface 1c of the heat sink 1 is processed, the aperture of the nozzle K2 is loosened and ejected (irradiated) radially as compared with the case of processing the one surface 1a. Without changing the direction of the nozzle K2,
The side surface 1c can be roughened.
【００２２】また、図３（ｃ）に示す様に、レーザ照射
においてヒートシンク１の側面１ｃを処理するときに
は、ノズルＫ２と側面１ｃとの間に、ミラーＫ３を介在
させ、このミラーＫ３によるレーザの屈折を利用して、
側面１ｃを粗くするようにしても良い。ここで、サンド
ブラストにおいては、例えばアルミナ等の研磨材を用
い、また、レーザ照射においては、被処理面を溶かして
荒らすためにＹＡＧレーザ等を用いることができる。As shown in FIG. 3 (c), when processing the side surface 1c of the heat sink 1 during laser irradiation, a mirror K3 is interposed between the nozzle K2 and the side surface 1c, and the laser beam is emitted by the mirror K3. Using refraction,
The side surface 1c may be roughened. Here, in sand blasting, an abrasive such as alumina can be used, and in laser irradiation, a YAG laser or the like can be used to melt and roughen the surface to be processed.
【００２３】また、具体的な粗化処理方法としては、上
記図２に示す型Ｋ１を用いてプレス加工時に同時に行う
ことも可能である。つまり、図２（ａ）に示す様に、型
Ｋ１として、その内面Ｋ１１が粗化されたものを用いれ
ば、プレス加工にてヒートシンクを形成するのと同時に
粗化処理も行うことができる。Further, as a specific roughening treatment method, it is possible to perform the roughening treatment simultaneously with the press working using the mold K1 shown in FIG. In other words, as shown in FIG. 2A, if a mold K1 whose inner surface K11 is roughened is used, a roughening process can be performed simultaneously with forming a heat sink by press working.
【００２４】更には、図４に示す様に、銅等の金属より
なるヒートシンク１の一面１ａに半導体チップ２を接続
部材３を介して固定した後、ヒートシンク１を高温環境
下（例えば２００℃程度）にさらして、ヒートシンク１
の表面に金属酸化膜（酸化銅等）１ｆを形成しても良
い。それによっても、金属酸化膜１ｆの形成により、金
属素地の場合に比べてヒートシンク１の表面と樹脂との
密着性が向上する。なお、Ｃｕを酸化させる方法として
は、酸化雰囲気中でレーザー加熱等を実施する方法もあ
る。Further, as shown in FIG. 4, after the semiconductor chip 2 is fixed to one surface 1a of the heat sink 1 made of metal such as copper via the connecting member 3, the heat sink 1 is heated in a high temperature environment (for example, about 200 ° C.). ) And heat sink 1
A metal oxide film (such as copper oxide) 1f may be formed on the surface of the substrate. Also in this case, the formation of the metal oxide film 1f improves the adhesion between the surface of the heat sink 1 and the resin as compared with the case of a metal substrate. As a method of oxidizing Cu, there is a method of performing laser heating or the like in an oxidizing atmosphere.
【００２５】上記した樹脂封止型半導体装置Ｓ１は、モ
ールド用の成形型（図示せず）内に、ヒートシンク１に
半導体チップ２が固定され且つ半導体チップ２とリード
４とがワイヤ５にて接続されたワークを、配置した後、
上記成形型内に封止用樹脂６を注入し、硬化させること
で、製造することができる。そして、この装置Ｓ１は、
ヒートシンク１の他面１ｂにて、半田や導電性接着剤等
を介して回路基板（図示せず）等へ実装されるところ
で、例えば、ヒートシンク１として銅、封止用樹脂６と
してエポキシ樹脂を用いた場合、半導体チップ（シリコ
ン）２の線膨張係数は３ｐｐｍ／℃程度、封止用樹脂６
の線膨張係数は８ｐｐｍ／℃程度、ヒートシンク１の線
膨張係数は１７ｐｐｍ／℃程度である。In the above-described resin-sealed semiconductor device S1, a semiconductor chip 2 is fixed to a heat sink 1 in a molding die (not shown) for molding, and the semiconductor chip 2 and leads 4 are connected by wires 5. After placing the work,
It can be manufactured by injecting the sealing resin 6 into the mold and curing the resin. And this device S1
On the other surface 1b of the heat sink 1, where it is mounted on a circuit board (not shown) or the like via solder or conductive adhesive, for example, copper is used for the heat sink 1 and epoxy resin is used for the sealing resin 6. The semiconductor chip (silicon) 2 has a coefficient of linear expansion of about 3 ppm / ° C.
Has a linear expansion coefficient of about 8 ppm / ° C., and the heat sink 1 has a linear expansion coefficient of about 17 ppm / ° C.
【００２６】このようなヒートシンク１と封止用樹脂６
との間で、両者の線膨張係数の差により過大な応力が発
生し、その応力により、ヒートシンク１と封止用樹脂６
との間に剥離が生じる可能性がある。Such a heat sink 1 and a sealing resin 6
Between the heat sink 1 and the sealing resin 6 due to the difference in linear expansion coefficient between the heat sink 1 and the sealing resin 6.
There is a possibility that peeling will occur between them.
【００２７】本発明者等は、図５に示す様なモデルを考
えて、封止用樹脂６の剥離（図５中のハッチング部）が
生じた場合における応力解析を行った。図５において
（ａ）は剥離がない場合、（ｂ）はヒートシンク１の一
面１ａにて剥離した場合、（ｃ）は（ｂ）に加えて更に
ヒートシンク１の側面１ｃまで剥離した場合を示す。The present inventors considered a model as shown in FIG. 5 and performed a stress analysis in the case where the sealing resin 6 was peeled off (hatched portion in FIG. 5). In FIG. 5, (a) shows a case where there is no peeling, (b) shows a case where it is peeled off on one surface 1a of the heat sink 1, and (c) shows a case where it is further peeled off to the side surface 1c of the heat sink 1 in addition to (b).
【００２８】解析の結果、ヒートシンク１の一面１ａと
側面１ｃとのなす角部Ａおよび突起部１ｄの先端角部Ｂ
の両角部Ａ、Ｂにおける応力は、（ａ）ではＡ＝９５．
４ＭＰａ、Ｂ＝６１．７ＭＰａであったのに対し、
（ｂ）では特に角部Ａにて３０２．２ＭＰａ、（ｃ）で
は特に角部Ｂにて２４５ＭＰａと大幅に応力が大きくな
った。このように、剥離によって過大な応力集中が発生
し、応力集中部位では、クラック等が発生する恐れもあ
る。As a result of the analysis, a corner A formed between one surface 1a and the side surface 1c of the heat sink 1 and a tip corner B of the protrusion 1d are formed.
At the two corners A and B of FIG.
While 4 MPa and B = 61.7 MPa,
In (b), the stress was particularly large at 302.2 MPa at the corner A, and in (c), the stress was particularly large at 245 MPa at the corner B. As described above, excessive stress concentration occurs due to peeling, and cracks and the like may occur at the stress concentration portion.
【００２９】その点、本実施形態によれば、ヒートシン
ク１における封止用樹脂６と接する接触面が、上記した
粗化処理によって従来よりも凹凸度合の大きな面となる
ため、ヒートシンク１と封止用樹脂６との密着性を向上
させることができる。そして、封止用樹脂６の剥離を抑
制し、上記図５の解析からわかるように、ヒートシンク
１と樹脂６との密着部に加わる応力を大幅に低減するこ
とができるため、クラックの防止にもつながる。In this regard, according to the present embodiment, the contact surface of the heat sink 1 which comes into contact with the sealing resin 6 becomes a surface having a greater degree of unevenness than the conventional one due to the above-described roughening treatment. Adhesiveness with the resin for use 6 can be improved. Then, the peeling of the sealing resin 6 is suppressed, and as can be seen from the analysis of FIG. 5 described above, the stress applied to the contact portion between the heat sink 1 and the resin 6 can be significantly reduced, so that cracks can also be prevented. Connect.
【００３０】例えば、従来のヒートシンクの表面粗さが
Ｒｚで０．７μｍ程度であったのに対して、本実施形態
のヒートシンク１の表面粗さは、Ｒｚで２μｍ以上程度
にまで粗くすることができる。For example, while the surface roughness of the conventional heat sink is about 0.7 μm in Rz, the surface roughness of the heat sink 1 of the present embodiment can be reduced to about 2 μm or more in Rz. it can.
【００３１】なお、ヒートシンク１における封止用樹脂
６と接する接触面の全てを、上記粗化処理された面とす
ることが好ましいが、特に、封止用樹脂６の剥離が発生
しやすいヒートシンク１の角部近傍の面のみを粗化処理
したものとしても良い。It is preferable that all of the contact surfaces of the heat sink 1 which are in contact with the sealing resin 6 are roughened surfaces. In particular, the heat sink 1 where the sealing resin 6 is liable to peel off is preferably used. The surface near the corner may be roughened.
【００３２】また、本発明は、ヒートシンク１と、この
ヒートシンク１の一面１ａ側に固定された半導体素子２
と、ヒートシンク１の他面１ｂ側を露出させつつヒート
シンク１及び半導体素子２を包み込むように封止する封
止用樹脂６とを備える樹脂封止型半導体装置Ｓ１におい
て、ヒートシンク１における封止用樹脂６と接する接触
面が、封止用樹脂６との密着性を高めるべく粗化処理さ
れていることを主たる特徴とするものであり、他の部分
は適宜設計変更しても良い。The present invention also relates to a heat sink 1 and a semiconductor element 2 fixed to one surface 1a of the heat sink 1.
And a sealing resin 6 that seals the heat sink 1 and the semiconductor element 2 so as to surround the heat sink 1 and the semiconductor element 2 while exposing the other surface 1 b side of the heat sink 1. The main feature is that the contact surface in contact with 6 has been subjected to a roughening treatment in order to increase the adhesion to the sealing resin 6, and the other parts may be appropriately designed and changed.
【図１】本発明の実施形態に係る樹脂封止型半導体装置
の概略断面図である。FIG. 1 is a schematic sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention.
【図２】ヒートシンクのプレス加工方法を説明する説明
図である。FIG. 2 is an explanatory diagram for explaining a method of pressing a heat sink.
【図３】サンドブラストやレーザ照射による粗化処理方
法を示す説明図である。FIG. 3 is an explanatory view showing a roughening method by sandblasting or laser irradiation.
【図４】ヒートシンクの表面に金属酸化膜を形成する例
を示す概略断面図である。FIG. 4 is a schematic sectional view showing an example in which a metal oxide film is formed on the surface of a heat sink.
【図５】封止用樹脂の応力解析のためのモデルを示す図
である。FIG. 5 is a diagram showing a model for stress analysis of a sealing resin.
１…ヒートシンク、１ａ…ヒートシンクの一面、２…半
導体チップ（半導体素子）、６…封止用樹脂、Ｋ１…成
形型。DESCRIPTION OF SYMBOLS 1 ... Heat sink, 1a ... One surface of heat sink, 2 ... Semiconductor chip (semiconductor element), 6 ... Resin for sealing, K1 ... Mold.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 本田 匡宏 愛知県刈谷市昭和町１丁目１番地 株式会 社デンソー内 Ｆターム(参考） 5F036 AA01 BA23 BB03 BE01 ────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Masahiro Honda 1-1-1, Showa-cho, Kariya-shi, Aichi F-term in DENSO Corporation (reference) 5F036 AA01 BA23 BB03 BE01
Claims (6)
クの一面（１ａ）側に固定された半導体素子（２）と、
前記ヒートシンクの他面（１ｂ）側を露出させつつ前記
ヒートシンク及び前記半導体素子を包み込むように封止
する封止用樹脂（６）とを備える樹脂封止型半導体装置
において、 前記ヒートシンクにおける前記封止用樹脂と接する接触
面が、前記封止用樹脂との密着性を高めるべく粗化処理
されていることを特徴とする樹脂封止型半導体装置。1. A heat sink (1), a semiconductor element (2) fixed to one surface (1a) of the heat sink,
A resin-encapsulated semiconductor device comprising: a sealing resin (6) for enclosing the heat sink and the semiconductor element while exposing the other surface (1b) of the heat sink; A resin-encapsulated semiconductor device, wherein a contact surface in contact with a sealing resin is subjected to a roughening treatment so as to enhance adhesion to the sealing resin.
止用樹脂（６）と接する接触面の全てが、前記封止用樹
脂との密着性を高めるべく粗化処理されていることを特
徴とする請求項１に記載の樹脂封止型半導体装置。2. The heat sink (1), wherein all contact surfaces in contact with the sealing resin (6) are subjected to a roughening treatment in order to increase the adhesion to the sealing resin. The resin-sealed semiconductor device according to claim 1.
スト処理を行うものであることを特徴とする請求項１ま
たは２に記載の樹脂封止型半導体装置。3. The resin-encapsulated semiconductor device according to claim 1, wherein the roughening process is performed by sandblasting the surface to be processed.
を行うものであることを特徴とする請求項１または２に
記載の樹脂封止型半導体装置。4. The resin-encapsulated semiconductor device according to claim 1, wherein the roughening is performed by irradiating a laser beam to a surface to be processed.
を用いたプレス加工により形成されるものであり、 前記粗化処理は、前記型として、その内面を粗化したも
のを用いて前記プレス加工を行うものであることを特徴
とする請求項１または２に記載の樹脂封止型半導体装
置。5. The heat sink (1) includes a mold (K1).
The roughening treatment is to perform the press working by using a roughened inner surface of the mold as the mold. 3. The resin-sealed semiconductor device according to 2.
り、 前記粗化処理は、被処理面を熱処理して前記金属を酸化
させたものであることを特徴とする請求項１または２に
記載の樹脂封止型半導体装置。6. The heat sink according to claim 1, wherein the heat sink is made of a metal, and the roughening is performed by oxidizing the metal by heat-treating a surface to be processed. Resin-sealed semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001176137A JP2002368165A (en) | 2001-06-11 | 2001-06-11 | Resin-sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001176137A JP2002368165A (en) | 2001-06-11 | 2001-06-11 | Resin-sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2002368165A true JP2002368165A (en) | 2002-12-20 |
Family
ID=19017171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001176137A Withdrawn JP2002368165A (en) | 2001-06-11 | 2001-06-11 | Resin-sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002368165A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006222406A (en) * | 2004-08-06 | 2006-08-24 | Denso Corp | Semiconductor device |
| JP2011054607A (en) * | 2009-08-31 | 2011-03-17 | Denso Corp | Resin sealing type semiconductor device, and method of manufacturing the same |
| JP2012243890A (en) * | 2011-05-18 | 2012-12-10 | Denso Corp | Semiconductor device, and method for manufacturing the same |
| JP2013225556A (en) * | 2012-04-20 | 2013-10-31 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
| WO2015145752A1 (en) * | 2014-03-28 | 2015-10-01 | 三菱電機株式会社 | Semiconductor module and drive unit equipped with semiconductor module |
| JP2015214137A (en) * | 2014-04-22 | 2015-12-03 | 株式会社日昌製作所 | Metal insert component, method for producing resin molded part using the metal insert component, monitoring method for high frequency induction heating, and heating temperature grasp method |
| JP2016062932A (en) * | 2014-09-15 | 2016-04-25 | 株式会社デンソー | Semiconductor device and manufacturing method of the same |
-
2001
- 2001-06-11 JP JP2001176137A patent/JP2002368165A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006222406A (en) * | 2004-08-06 | 2006-08-24 | Denso Corp | Semiconductor device |
| DE102005036996B4 (en) | 2004-08-06 | 2018-05-03 | Denso Corporation | Semiconductor device |
| JP2011054607A (en) * | 2009-08-31 | 2011-03-17 | Denso Corp | Resin sealing type semiconductor device, and method of manufacturing the same |
| JP2012243890A (en) * | 2011-05-18 | 2012-12-10 | Denso Corp | Semiconductor device, and method for manufacturing the same |
| JP2013225556A (en) * | 2012-04-20 | 2013-10-31 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method therefor |
| WO2015145752A1 (en) * | 2014-03-28 | 2015-10-01 | 三菱電機株式会社 | Semiconductor module and drive unit equipped with semiconductor module |
| US10373896B2 (en) | 2014-03-28 | 2019-08-06 | Mitsubishi Electric Corporation | Semiconductor module and drive device equipped with semiconductor module |
| JP2015214137A (en) * | 2014-04-22 | 2015-12-03 | 株式会社日昌製作所 | Metal insert component, method for producing resin molded part using the metal insert component, monitoring method for high frequency induction heating, and heating temperature grasp method |
| JP2016062932A (en) * | 2014-09-15 | 2016-04-25 | 株式会社デンソー | Semiconductor device and manufacturing method of the same |
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