JPH05109928A - Lead frame for resin-sealed semiconductor device and resin-sealed semiconductor device using it - Google Patents
Lead frame for resin-sealed semiconductor device and resin-sealed semiconductor device using itInfo
- Publication number
- JPH05109928A JPH05109928A JP26465691A JP26465691A JPH05109928A JP H05109928 A JPH05109928 A JP H05109928A JP 26465691 A JP26465691 A JP 26465691A JP 26465691 A JP26465691 A JP 26465691A JP H05109928 A JPH05109928 A JP H05109928A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- resin
- inner lead
- semiconductor device
- sealing resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、樹脂封止型半導体装置
に使用されるリードフレームおよびそれを用いた樹脂封
止型半導体装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame used in a resin-sealed semiconductor device and a resin-sealed semiconductor device using the same.
【０００２】[0002]
【従来の技術】従来のこの種の樹脂封止型半導体装置と
しては図４に示すような断面構造のものがある。2. Description of the Related Art A conventional resin-encapsulated semiconductor device of this type has a cross-sectional structure as shown in FIG.
【０００３】図において、１は半導体素子、２は、半導
体素子１を搭載するためのリードフレームのダイパッ
ド、３は内部を密封するための封止樹脂、４はリードフ
レームのインナーリード、５はリードフレームのアウタ
ーリード、６は、半導体素子１上のアルミパッド電極
部、７は、インナーリード４端部のステッチ部、８は、
アルミパッド電極部６とステッチ部７とを電気的に接続
するための金属細線、９はアウターリード５の根元部、
１０は封止樹脂３とインナーリード４との界面である。In the drawing, 1 is a semiconductor element, 2 is a die pad of a lead frame for mounting the semiconductor element 1, 3 is a sealing resin for sealing the inside, 4 is an inner lead of a lead frame, and 5 is a lead. Outer leads of the frame, 6 is an aluminum pad electrode portion on the semiconductor element 1, 7 is a stitch portion at the end of the inner lead 4, 8 is
A thin metal wire for electrically connecting the aluminum pad electrode portion 6 and the stitch portion 7, 9 is a root portion of the outer lead 5,
Reference numeral 10 denotes an interface between the sealing resin 3 and the inner lead 4.
【０００４】上記構成の装置の組み立てを説明すると、
リードフレームのダイパッド２上に半導体素子１を搭載
するとともに、半導体素子１上の多数のアルミパッド電
極部６と、それに対応するリードフレームの各インナー
リード４上のステッチ部７とを金属細線８でそれぞれ接
続する。この状態で、これらをモールド金型内に投入し
て型締めをしてから樹脂を注入して図４のように封止樹
脂３をモールド成形する。この封止樹脂３が硬化してか
ら、半田メッキをリードフレームのアウターリード５の
表面に施すとともに、リード成形金型でアウターリード
５端部をあらかじめ定められた図示の形状に曲げ加工す
ることで図４の装置の製造が完了する。The assembly of the apparatus having the above structure will be described below.
The semiconductor element 1 is mounted on the die pad 2 of the lead frame, and a large number of aluminum pad electrode portions 6 on the semiconductor element 1 and the corresponding stitch portions 7 on the inner leads 4 of the lead frame are formed by metal thin wires 8. Connect each. In this state, these are put into a molding die and the mold is clamped, and then the resin is injected to mold the sealing resin 3 as shown in FIG. After the sealing resin 3 is hardened, solder plating is applied to the surfaces of the outer leads 5 of the lead frame, and the ends of the outer leads 5 are bent into a predetermined shape using a lead molding die. The manufacture of the device of FIG. 4 is complete.
【０００５】[0005]
【発明が解決しようとする課題】上記構成の従来装置に
おいては、アウターリード曲げ加工用リード成形金型の
構造が、アウターリード５の根元部９の上面と下面とを
クランプしないで曲げ加工する構造であるから、アウタ
ーリード５の曲げ加工によって封止樹脂３とインナーリ
ード４との界面１０には応力が発生した状態となってお
り、その応力によって、該界面１０には微小な隙間（図
示していない）が発生し易く、この隙間がインナーリー
ド４端部のステッチ部７に接続の金属細線８にまで到達
してしまった場合には、金属細線８周辺に水分が外部か
ら侵入し、それによって装置の電気特性不良が発生して
しまい、当該装置の信頼性が大きく低下するという問題
があった。In the conventional device having the above-mentioned structure, the structure of the outer lead bending lead forming die is such that the upper and lower surfaces of the root portion 9 of the outer lead 5 are bent without being clamped. Therefore, a stress is generated in the interface 10 between the sealing resin 3 and the inner lead 4 due to the bending process of the outer lead 5, and the stress causes a minute gap (shown in the figure) in the interface 10. If the gap reaches the metal thin wire 8 connected to the stitch portion 7 at the end of the inner lead 4, moisture invades the outside of the metal thin wire 8 from the outside, As a result, there is a problem in that the electrical characteristics of the device are deteriorated and the reliability of the device is significantly reduced.
【０００６】したがって、本発明においては、アウター
リードの曲げ加工により応力が発生していても、この応
力の影響を低減することによって封止樹脂とインナーリ
ードとの界面に微小な隙間が発生してしまうことを抑制
できるようにするとともに、該隙間がインナーリード端
部のステッチ部まで到達しないようにしてその周辺への
水分の侵入を有効に防止して当該装置の信頼性を大きく
高めることができるようにすることを目的としている。Therefore, in the present invention, even if stress is generated by bending the outer lead, a minute gap is generated at the interface between the sealing resin and the inner lead by reducing the influence of this stress. It is possible to prevent this from happening, prevent the gap from reaching the stitch portion of the inner lead end portion, effectively prevent the infiltration of water into the periphery thereof, and greatly improve the reliability of the device. The purpose is to do so.
【０００７】[0007]
【課題を解決するための手段】このような目的を達成す
るために、本発明のリードフレームにおいては、インナ
ーリードの所要部分に凹部、または凸部、あるいはこれ
らの複合部が形成されてあり、また、本発明の樹脂封止
型半導体装置においては、このようなリードフレームに
おけるインナーリードの前記所要部分が封止樹脂とイン
ナーリードとの界面に近い樹脂内部に位置されてある。In order to achieve such an object, in the lead frame of the present invention, a concave portion or a convex portion, or a composite portion thereof is formed in a required portion of the inner lead, Further, in the resin-sealed semiconductor device of the present invention, the required portion of the inner lead in such a lead frame is located inside the resin near the interface between the sealing resin and the inner lead.
【０００８】[0008]
【作用】封止樹脂とインナーリードとは、該インナーリ
ードの凹部などで密着性が向上する結果、その凹部など
が前記界面に近い樹脂内部に位置させると、アウターリ
ードを曲げ加工することによってアウターリード根元部
に発生している応力の影響は低減して該界面に微小な隙
間が発生することが抑制される。The adhesion between the sealing resin and the inner lead is improved by the concave portion of the inner lead. As a result, when the concave portion is positioned inside the resin close to the interface, the outer lead is bent to form the outer member. The influence of the stress generated at the root portion of the lead is reduced, and the generation of minute gaps at the interface is suppressed.
【０００９】[0009]
【実施例】以下、本発明の一実施例を図面を参照して詳
細に説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.
【００１０】図１は、本発明の実施例に係るリードフレ
ームを用いた樹脂封止型半導体装置の要部断面図であ
り、従来例に図４と対応する部分には同一の符号を付
し、その同一の符号に係る部分についての詳しい説明は
省略する。FIG. 1 is a sectional view of an essential part of a resin-sealed type semiconductor device using a lead frame according to an embodiment of the present invention. In the conventional example, parts corresponding to those in FIG. The detailed description of the parts having the same reference numerals is omitted.
【００１１】本実施例では、封止樹脂３とインナーリー
ド４との密着性を向上させるように、封止樹脂３とイン
ナーリード４との界面１０に近い樹脂内部１１に位置す
るインナーリード４部分の上面と下面とに凹部１２が形
成されてある。In this embodiment, in order to improve the adhesion between the sealing resin 3 and the inner leads 4, the inner lead 4 portion located in the resin interior 11 near the interface 10 between the sealing resin 3 and the inner leads 4. A recess 12 is formed on the upper surface and the lower surface of the.
【００１２】リードフレームのインナーリード４部分を
このような構造とすることによって、アウターリード曲
げ加工用のリード成形金型がアウターリード５の根元部
９の上面と下面とをクランプすることなく成形するよう
な構造になっていても、インナーリード４部分の凹部１
２が界面１０近くの内部封止樹脂１１とインナーリード
４との密着性を向上させているから、アウターリード５
の曲げ加工によって生じる応力の影響は大きく低減する
ことになる。したがって、内部封止樹脂１１とのインナ
ーリード４との界面１０には隙間が発生することが抑制
されるから、従来のようにその隙間がインナーリード４
端部のステッチ部７にまで到達して水分がそこまで侵入
して装置の電気的特性の不良を招くようなことがなくな
り、装置の信頼性が大きく向上する。By forming the inner lead 4 portion of the lead frame with such a structure, a lead forming die for outer lead bending is formed without clamping the upper surface and the lower surface of the root portion 9 of the outer lead 5. Even if it has such a structure, the recess 1 of the inner lead 4 part
2 improves the adhesion between the inner sealing resin 11 near the interface 10 and the inner lead 4, the outer lead 5
The influence of the stress generated by the bending process is greatly reduced. Therefore, it is possible to prevent a gap from being generated at the interface 10 between the inner sealing resin 11 and the inner lead 4.
The water does not reach the stitch portion 7 at the end portion and the water does not penetrate there to cause a defect in the electrical characteristics of the device, and the reliability of the device is greatly improved.
【００１３】なお、このような凹部１２ではなく図２の
ように凸部１３としたり、あるいは図３のように凹部１
２と凸部１３との複合部形状のものとしてもよい。Incidentally, instead of such a concave portion 12, a convex portion 13 as shown in FIG. 2 or a concave portion 1 as shown in FIG.
The shape of the composite portion of 2 and the convex portion 13 may be used.
【００１４】なお、これら凹部１２、凸部１３、および
これらの複合部は、打ち抜き金型による機械加工による
とか、あるいはマスクを用いた化学処理によって、形成
することができる。また、図３では凹部１２が上側、凸
部１３が下側であったが、この逆であってもよい。さら
に、凹部１２とか凸部１３の個数は１つであっても、複
数であってもよい。The concave portion 12, the convex portion 13 and the composite portion thereof can be formed by mechanical processing using a punching die or by chemical treatment using a mask. Further, although the concave portion 12 is on the upper side and the convex portion 13 is on the lower side in FIG. 3, they may be reversed. Further, the number of the concave portions 12 or the convex portions 13 may be one or plural.
【００１５】[0015]
【発明の効果】以上のように本発明のリードフレームに
おいては、インナーリードの所要部分に凹部、または凸
部、あるいはこれらの複合部が形成されてあるから、こ
のインナーリードの所要部分を樹脂で封止した場合は、
そのインナーリードと封止樹脂との密着性は大きく向上
することになる。そして、このようなリードフレームを
用いた樹脂封止型半導体装置においては、該リードフレ
ームのアウターリードをそれの上面と下面とをクランプ
することなく金型で曲げ加工し、それによってアウター
リードの根元部と封止樹脂とインナーリードとの界面と
応力がかかっていても、その応力の影響は低減されるこ
とになり、その結果、封止樹脂とインナーリードとの界
面に微小な隙間が発生することが抑制されるようなり、
従来のようにその隙間がインナーリード端部のステッチ
部まで到達してしまってその周辺への水分が侵入するよ
うなことがなくなり、当該装置の信頼性を大きく高めら
れることになる。As described above, in the lead frame of the present invention, since the concave portion or the convex portion or the composite portion thereof is formed in the required portion of the inner lead, the required portion of the inner lead is made of resin. If sealed,
The adhesion between the inner lead and the sealing resin is greatly improved. In a resin-sealed semiconductor device using such a lead frame, the outer lead of the lead frame is bent by a mold without clamping the upper surface and the lower surface of the outer frame, and thereby the root of the outer lead is formed. Even if a stress is applied to the interface between the sealing resin and the inner lead, the effect of the stress is reduced, and as a result, a minute gap is generated at the interface between the sealing resin and the inner lead. Will be suppressed,
Unlike the conventional case, the gap does not reach the stitch portion at the end portion of the inner lead and the moisture does not enter the periphery thereof, and the reliability of the device can be greatly improved.
【図１】本発明の実施例に係る樹脂封止型半導体装置の
断面図である。FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device according to an embodiment of the present invention.
【図２】本発明の他の実施例に係る樹脂封止型半導体装
置の断面図である。FIG. 2 is a sectional view of a resin-sealed semiconductor device according to another embodiment of the present invention.
【図３】本発明のさらに他の実施例に係る樹脂封止型半
導体装置の断面図である。FIG. 3 is a sectional view of a resin-encapsulated semiconductor device according to still another embodiment of the present invention.
【図４】従来例に係る樹脂封止型半導体装置の断面図で
ある。FIG. 4 is a sectional view of a resin-encapsulated semiconductor device according to a conventional example.
１ 半導体素子 ２ ダイパッド ３ 封止樹脂 ４ インナーリード ５ アウターリード ９ アウターリード根元部 １０ 封止樹脂とインナーリードとの界面 １１ 内部樹脂 １２ 凹部 １３ 凸部 1 Semiconductor Element 2 Die Pad 3 Encapsulation Resin 4 Inner Lead 5 Outer Lead 9 Outer Lead Root 10 Interface between Encapsulation Resin and Inner Lead 11 Internal Resin 12 Recess 13 Convex
Claims (2)
は凸部、あるいはこれらの複合部が形成されてあること
を特徴とする樹脂封止型半導体装置用リードフレーム。1. A lead frame for a resin-sealed semiconductor device, wherein a concave portion, a convex portion, or a composite portion thereof is formed in a required portion of the inner lead.
ードが半導体素子と共に樹脂封止されてあって、該イン
ナーリードの前記所要部分が封止樹脂とインナーリード
との界面に近い樹脂内部に位置されてあることを特徴と
する樹脂封止型半導体装置。2. The inner lead of the lead frame according to claim 1 is resin-sealed together with a semiconductor element, and the required portion of the inner lead is located inside the resin near the interface between the sealing resin and the inner lead. A resin-encapsulated semiconductor device characterized by being provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26465691A JPH05109928A (en) | 1991-10-14 | 1991-10-14 | Lead frame for resin-sealed semiconductor device and resin-sealed semiconductor device using it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26465691A JPH05109928A (en) | 1991-10-14 | 1991-10-14 | Lead frame for resin-sealed semiconductor device and resin-sealed semiconductor device using it |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05109928A true JPH05109928A (en) | 1993-04-30 |
Family
ID=17406386
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26465691A Pending JPH05109928A (en) | 1991-10-14 | 1991-10-14 | Lead frame for resin-sealed semiconductor device and resin-sealed semiconductor device using it |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05109928A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545921A (en) * | 1994-11-04 | 1996-08-13 | International Business Machines, Corporation | Personalized area leadframe coining or half etching for reduced mechanical stress at device edge |
| US5777380A (en) * | 1995-03-17 | 1998-07-07 | Seiko Epson Corporation | Resin sealing type semiconductor device having thin portions formed on the leads |
| US5973388A (en) * | 1998-01-26 | 1999-10-26 | Motorola, Inc. | Leadframe, method of manufacturing a leadframe, and method of packaging an electronic component utilizing the leadframe |
| US6483178B1 (en) * | 2000-07-14 | 2002-11-19 | Siliconware Precision Industries Co., Ltd. | Semiconductor device package structure |
| US7102216B1 (en) * | 2001-08-17 | 2006-09-05 | Amkor Technology, Inc. | Semiconductor package and leadframe with horizontal leads spaced in the vertical direction and method of making |
| US10243107B2 (en) | 2016-09-28 | 2019-03-26 | Nichia Corporation | Light emitting device and method for manufacturing thereof |
-
1991
- 1991-10-14 JP JP26465691A patent/JPH05109928A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5545921A (en) * | 1994-11-04 | 1996-08-13 | International Business Machines, Corporation | Personalized area leadframe coining or half etching for reduced mechanical stress at device edge |
| US5777380A (en) * | 1995-03-17 | 1998-07-07 | Seiko Epson Corporation | Resin sealing type semiconductor device having thin portions formed on the leads |
| US5973388A (en) * | 1998-01-26 | 1999-10-26 | Motorola, Inc. | Leadframe, method of manufacturing a leadframe, and method of packaging an electronic component utilizing the leadframe |
| US6483178B1 (en) * | 2000-07-14 | 2002-11-19 | Siliconware Precision Industries Co., Ltd. | Semiconductor device package structure |
| US7102216B1 (en) * | 2001-08-17 | 2006-09-05 | Amkor Technology, Inc. | Semiconductor package and leadframe with horizontal leads spaced in the vertical direction and method of making |
| US10243107B2 (en) | 2016-09-28 | 2019-03-26 | Nichia Corporation | Light emitting device and method for manufacturing thereof |
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