JPH11260856A - Semiconductor device and its manufacture and mounting structure of the device - Google Patents

Semiconductor device and its manufacture and mounting structure of the device

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Publication number
JPH11260856A
JPH11260856A JP10059147A JP5914798A JPH11260856A JP H11260856 A JPH11260856 A JP H11260856A JP 10059147 A JP10059147 A JP 10059147A JP 5914798 A JP5914798 A JP 5914798A JP H11260856 A JPH11260856 A JP H11260856A
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Japan
Prior art keywords
wire
surface
pad electrode
exposed
semiconductor device
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Pending
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JP10059147A
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Japanese (ja)
Inventor
▲濱▼谷  毅
Osamu Adachi
Takeshi Hamaya
Junichi Ueno
Yasuhiro Yamada
順一 上野
修 安達
恭裕 山田
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Matsushita Electron Corp
松下電子工業株式会社
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Application filed by Matsushita Electron Corp, 松下電子工業株式会社 filed Critical Matsushita Electron Corp
Priority to JP10059147A priority Critical patent/JPH11260856A/en
Publication of JPH11260856A publication Critical patent/JPH11260856A/en
Application status is Pending legal-status Critical

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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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Abstract

PROBLEM TO BE SOLVED: To attain high density mounting by making this device compact and thin, to reduce cost, to simplify treatment, and to stabilize manufacturing quality.
SOLUTION: This device is provided with a semiconductor chip 1, having a pad electrode 2, wire 3 bonded on the pad electrode 2, and sealing material formed by hardening liquid encapsulating resin 4 for encapsulating the semiconductor chip 1 by covering the pad electrode face, and a part of the wire 3 is exposed on the surface of the encapsulating material. Thus, since a part of the wire 3 is exposed on the surface of the encapsulating material so as to be used as an electrode for connection with the outside, it is not necessary to provide a conventional lead frame. Thus, the semiconductor device can be made compact and thin, and high density mounting can be attained. Also the number of item parts or materials are reduces so that costs can be reduced to pidlly, and manufacturing assembly is easily attained. Moreover, since the lead does not project so that handling is mode easy, connection failure based on lead deformation can be prevented, and yield can be improved.
COPYRIGHT: (C)1999,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】この発明は、電極取り出し構造を主要部とする樹脂封止型半導体装置及びその製造方法並びに半導体装置の実装構造に関するものである。 TECHNICAL FIELD The present invention relates to a mounting structure of a resin sealed semiconductor device and a manufacturing method and a semiconductor device as a main part of the electrode extraction structure.

【0002】 [0002]

【従来の技術】樹脂封止型半導体装置は、表面にパッド電極を有する半導体チップを樹脂モールド内に埋設して形成される。 BACKGROUND ART resin-sealed semiconductor device, a semiconductor chip having a pad electrode on the surface is formed by embedding in the resin mold. 従来の樹脂封止型半導体装置の構造を図1 Figure a structure of a conventional resin-sealed semiconductor device 1
1に示す。 It is shown in 1. 半導体チップ14は、接着剤15を介してリードフレーム中央のダイパッド16上に搭載固定される。 The semiconductor chip 14 is mounted fixed on the lead frame center of the die pad 16 through an adhesive 15. リードフレームはダイバッド16の周囲に内部リード17およびこれに連続する外部リード18を有し、内部リード17が金等の金属細線からなるボンディングワイヤ19を介して半導体チップ14上の対応するパッド電極20と接続される。 The lead frame includes an external lead 18 a continuous internal lead 17 and to the periphery of Daibaddo 16, the pad electrode 20 corresponding on the semiconductor chip 14 through the bonding wire 19 inside the lead 17 is made of a thin metal wire such as gold It is connected to. このようにしてリードフレーム上に搭載した半導体チップ14をワイヤボンディングした状態で、金型を用いて樹脂モールド体21を形成し半導体チップ14の樹脂封止を行う。 Such a semiconductor chip 14 mounted on a lead frame in a state of wire bonding to form a resin mold body 21 sealed with resin of the semiconductor chip 14 by using a mold. これにより、半導体装置が形成される。 Thus, the semiconductor device is formed.

【0003】 [0003]

【発明が解決しようとする課題】しかしながら、前記従来の樹脂封止型半導体装置においては、外部との電気的接続をリードフレームの外部リード18を介して行うため、リードフレーム分の厚さおよび占有面積とこのリードフレームを覆う部分の樹脂モールド体21の厚さ、面積が増え、半導体装置全体が大きくなって、コンパクトで高密度実装可能な半導体装置の実現が図られなかった。 [SUMMARY OF THE INVENTION However, in the above conventional resin-sealed semiconductor device, for electrically connecting with the outside via the external leads 18 of the lead frame, the lead frame thickness and occupied the thickness of the portion of the resin mold body 21 the area and covering the lead frame, increasing the area, the whole semiconductor device is increased, the realization of compact, high-density mountable semiconductor device has not been achieved. また、構成材料や組立工数が多くなり、製造作業が面倒となってコストも上昇するという問題があった。 In addition, the material and the number of assembly steps is increased, cost is also a problem of increased manufacturing operation becomes troublesome. また、金型により樹脂モールド体21を成形する場合、ある程度粘度のある樹脂を一方向から注入するためボンディングワイヤ19のループ形状が変形するという問題があった。 Furthermore, when molding the resin molded body 21 by a die, there is a problem that the loop shape of the bonding wire 19 for injecting resin with a somewhat viscosity from one direction to deform. さらに、外部リード18が樹脂モールド体21 Furthermore, the external lead 18 is a resin molded body 21
から突出して引出されているため、取扱い上のミス等により外部リード18が変形するおそれがあり、この場合外部リード18がプリント基板上の所定のランドパターン上に接合されず、実装不良を起こすという問題があった。 Because it is drawn to protrude from, there is a possibility that the external lead 18 is deformed by mistake such as in handling, that in this case the external leads 18 is not bonded to a predetermined land pattern on the printed circuit board, causing mounting failure there was a problem.

【0004】したがって、この発明の目的は、上記従来技術の問題を解決し、小型薄型でコンパクトな構成として高密度実装を可能とし、コストの低減を図るとともに取扱いが容易で製造上の品質が安定した樹脂封止型半導体装置及びその製造方法並びに半導体装置の実装構造を提供することである。 It is therefore an object of this invention is to solve the above and allows high-density mounting a compact structure with small and thin, the quality of the handling is easy manufacture with reduced cost stable it is to provide a the mounting structure of the resin-sealed semiconductor device and a manufacturing method and a semiconductor device.

【0005】 [0005]

【課題を解決するための手段】この目的を達成するためにこの発明の請求項1記載の半導体装置は、パッド電極を有する半導体チップと、パッド電極にボンディングされたワイヤと、パッド電極面を覆って半導体チップを封止する封止材とを備え、ワイヤの一部が封止材の表面に露出していることを特徴とする。 Means for Solving the Problems A semiconductor device according to claim 1, wherein the present invention in order to achieve the object, over a semiconductor chip having a pad electrode, and the bonded wires to the pad electrode, a pad electrode surface and a sealing member for sealing the semiconductor chip Te, a portion of the wire is equal to or exposed on the surface of the sealing material.

【0006】このように、半導体チップのパッド電極にボンディングしたワイヤの一部を封止材の表面に露出させてこれを外部との接続用電極として用いるため、従来のようなリードフレームが不要になる。 [0006] Thus, a portion of the wire bonded to pad electrodes of the semiconductor chip for using this exposes the surface of the sealing member as a connecting electrode to the outside, unnecessary conventional like lead frame Become. これにより、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 Accordingly, miniaturization and thinning of the semiconductor device is achieved enabling high-density mounting. また、部品点数や材料が少なくなり、コストの低減が速成されるとともに、製造組立が容易に行われる。 Also, parts and materials are reduced, the cost reduction of the quick-manufacture assembly is easily performed. さらに、リードが突出しないため取扱いが容易になり、またリード変形に基づく接合不良等がなくなり製造上の品質が安定し歩留りの向上が図られる。 Further, it becomes easy to handle because the lead does not protrude, and the quality of the manufacturing eliminates defective bonding or the like based on the read deformation is achieved improvement in stable yield.

【0007】請求項2記載の半導体装置は、請求項1において、ワイヤの一端をパッド電極上にボンディングし、他端を同じパッド電極上にボンディングすることにより、パッド電極上にワイヤのループを形成した。 [0007] The semiconductor device according to claim 2, wherein the formation in claim 1, bonding the one end of the wire on the pad electrode, by bonding the other end to the same pad electrode, the wire loop on the pad electrode did. このように、ワイヤの一端をパッド電極上にボンディングし、他端を同じパッド電極上にボンディングすることにより、パッド電極上にワイヤのループを形成したので、 Thus, bonding the one end of the wire on the pad electrode, by bonding the other end to the same pad electrode, since the forming wire loop on the pad electrode,
封止材の表面に露出したワイヤのループの頂部が外部との接続用電極となる。 Top of loop of wire exposed on the surface of the sealing material is between the connection electrode to the outside. この場合、ワイヤをループにすることでその起立した状態を成形時等においても保持しやすい。 In this case, the standing state also easy to hold in a molding or the like by the wire loop. また、ワイヤの両端が同じ電極パッド上にボンディングされるので、狭い間隔で電極を形成できる。 Moreover, since both ends of the wire is bonded to the same electrode on the pad, it can form the electrode in a narrow interval.

【0008】請求項3記載の半導体装置は、請求項1において、ワイヤの一端をパッド電極上にボンディングし、他端をパッド電極近傍でこのパッド電極と分離した位置にボンディングした。 [0008] The semiconductor device according to claim 3, in claim 1, bonding the one end of the wire on the pad electrode was bonded to a position separate from the pad electrode and the other end in the pad electrode vicinity. このように、ワイヤの一端をパッド電極上にボンディングし、他端をパッド電極近傍でこのパッド電極と分離した位置にボンディングすることにより、ワイヤのループが形成され請求項2と同様に封止材の表面に露出したワイヤのループの頂部が外部との接続用電極となり、ワイヤをループにすることでその起立した状態を成形時等においても保持しやすい。 Thus, bonding the one end of the wire on the pad electrode, by bonding at a position separated from the pad electrode and the other end in the pad electrode vicinity, the sealing material similarly to claim 2 wire loop is formed top becomes the connecting electrodes with the outside of the exposed wire loop on the surface of, easily maintained even when shaping the upright state by the wire loop or the like. また、ワイヤの両端が上記のように別の位置にボンディングされるので安定した状態で接続される。 Both ends of the wire are connected in a stable state because it is bonded to another location as described above.

【0009】請求項4記載の半導体装置は、請求項1において、ワイヤの一端をパッド電極上にボンディングし、他端を封止材の表面に露出するように垂直に立ち上げた。 [0009] The semiconductor device according to claim 4, in claim 1, bonding the one end of the wire on the pad electrode, launched vertically to expose the other end surface of the sealing member. このように、ワイヤの一端をパッド電極上にボンディングし、他端を封止材の表面に露出するように垂直に立ち上げたので、封止材の表面から露出した他端が外部との接続用電極となる。 Thus, bonding the one end of the wire on the pad electrode, the other end was a launched vertically so as to be exposed at the surface of the sealing material, connecting the other end exposed from the surface of the sealing material is an external the use electrode. また、1回のボンディングで電極を形成するので構造が簡単で容易に製造できる。 The structure can be simple and easily manufactured because it forms an electrode in a single bonding.

【0010】請求項5記載の半導体装置は、パッド電極を有する半導体チップと、パッド電極にボンディングされたワイヤと、このワイヤの一部が表面に露出した状態でパッド電極面を覆って半導体チップを封止する封止材とを有する複数の半導体装置を備え、複数の半導体装置のワイヤ露出面側を対向させ、パッド電極上の封止材の表面に露出する前記ワイヤどうしを中間物を介して接続したことを特徴とする。 [0010] The semiconductor device according to claim 5 includes a semiconductor chip having a pad electrode, and the wire is bonded to the pad electrode, a semiconductor chip to cover the pad electrode surface with a partially exposed on the surface of the wire comprising a plurality of semiconductor devices having a sealing member for sealing, are opposed to the wire exposed surface side of the plurality of semiconductor devices, the wire each other via an intermediate product is exposed to the surface of the sealing material on the pad electrode characterized in that the connection.

【0011】このように、複数の半導体装置のワイヤ露出面側を対向させ、パッド電極上の封止材の表面に露出する前記ワイヤどうしを中間物を介して接続するので、 [0011] Thus, to face the wire exposed surface side of the plurality of semiconductor devices, since the wire each other to expose the surface of the sealing material on the pad electrode is connected through the intermediate,
半導体装置どうしを電気的、機械構造的に直接に近い状態で接続することができ、半導体装置のコンパクトなハイブリッド化が可能となる。 Electrical semiconductor device each other, can be connected in a state close to the machine structure and directly, it is possible to compact hybrid of the semiconductor device. 請求項6記載の半導体装置の製造方法は、半導体チップの表面に形成されたパッド電極上にワイヤを形成する工程と、ワイヤの一部が表面に露出するように液状封止樹脂を半導体チップ上に塗布する工程と、液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化する工程と、液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに封止材のワイヤが露出した部分を所定の高さにする工程とを含む。 The method according to claim 6, wherein the forming a wire on a pad electrode formed on the surface of the semiconductor chip, a part of the wire on the semiconductor chip of the liquid sealing resin so as to expose the surface a step of applying to a step of pre-curing in a state where the liquid sealing resin surface having a flexibility enough to dry, by pressing the surface of the sealing member in a state of pre-curing the liquid sealing resin the portion where the wire of the sealing material is exposed with molding the entire predetermined thickness and a step of a predetermined height.

【0012】このように、半導体チップの表面に形成されたパッド電極上にワイヤを形成し、ワイヤの一部が表面に露出するように液状封止樹脂を半導体チップ上に塗布し、液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化し、液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに封止材のワイヤが露出した部分を所定の高さにするので、従来のようなリードフレームが不要となり、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 [0012] Thus, the wire is formed on the pad electrodes formed on the surface of the semiconductor chip, a part of the wire is coated with the liquid sealing resin so as to be exposed on the surface on the semiconductor chip, a liquid seal sealing together temporarily cured in the state where the resin surface with a flexible enough to dry, molding the entire predetermined thickness by pressing the surface of the sealing member in a state of pre-curing the liquid sealing resin since the portion where the wire is exposed for sealing material to a predetermined height, a lead frame as in the prior art it is unnecessary, miniaturization and thinning of the semiconductor device is achieved enabling high-density mounting. また、部品点数や材料が少なくなり、コストの低減、生産性の向上を図ることができる。 Further, the number of components and materials is reduced, it is possible to achieve cost reduction, increased productivity. また、樹脂成形の際、液状封止樹脂を用いているのでワイヤの変形を防止できる。 Also, when the resin molding, because of the use of liquid sealing resin can be prevented wire deformation. さらに、リードが突出しないため取扱いが容易になり、またリード変形に基づく接合不良等がなくなり歩留りの向上が図られる。 Further, it becomes easy to handle because the lead does not protrude, and improvement in yield eliminates defective bonding or the like based on the read deformation is achieved. また、 Also,
封止材のワイヤが露出した部分が外部との接続用電極となり、この部分を成形によって所定の高さにするので、 Wire is exposed portions of the sealing material is between the connection electrodes with the outside, so that a predetermined height by molding this part,
樹脂成形と同時に電極を所定位置に形成できる。 Simultaneously with resin molding can form the electrode in place.

【0013】請求項7記載の半導体装置の製造方法は、 [0013] The method according to claim 7, wherein the
ウエハ上で複数の半導体チップの表面に形成されたパッド電極上にワイヤを形成する工程と、ワイヤの一部が表面に露出するように液状封止樹脂をウエハ全域に塗布する工程と、液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化する工程と、液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに封止材のワイヤが露出した部分を所定の高さにする工程と、封止材を成形したウエハを半導体チップの個片に切り分ける工程とを含む。 Forming a plurality of semiconductor chips wire on a pad electrode formed on the surface on the wafer, a step of applying a liquid sealing resin on the wafer throughout such that a portion of the wire is exposed to the surface, the liquid seal a step of temporarily cured in the state where the sealing resin surface having a flexibility enough to dry, forming a whole to a predetermined thickness by pressing the surface of the sealing member in a state of pre-curing the liquid sealing resin to together and a step of carving a step of the wire of a predetermined and is exposed portion height of the sealing material, a molded wafer sealant into pieces of the semiconductor chips.

【0014】このように、ウエハ上で複数の半導体チップの表面に形成されたパッド電極上にワイヤを形成し、 [0014] Thus, the wire is formed into a plurality of semiconductor chips on a pad electrode formed on the surface on the wafer,
ワイヤの一部が表面に露出するように液状封止樹脂をウエハ全域に塗布し、液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化し、液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに封止材のワイヤが露出した部分を所定の高さにし、封止材を成形したウエハを半導体チップの個片に切り分けるので、従来のようなリードフレームが不要となり、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 Some of the wires coated with the liquid sealing resin so as to expose the surface of the wafer throughout the liquid sealing resin is tentatively cured with the surface with a flexible enough to drying, temporary liquid sealing resin the portion where the wire is exposed encapsulant with molding the entire predetermined thickness by pressing the surface of the sealing material cured state at a predetermined height, the semiconductor chip molded wafer sealant since carving of pieces, a lead frame as in the prior art is unnecessary, miniaturization and thinning of the semiconductor device is achieved enabling high-density mounting. また、ウエハの状態で外部との接続用電極となるワイヤを形成するので、さらに生産性が向上する。 Also, because it forms a wire serving as a connection electrode to an external state of the wafer, further productivity can be improved. その他、請求項5と同様の作用効果がある。 Other, the same effects as claim 5.

【0015】請求項8記載の半導体装置の実装構造は、 The mounting structure of a semiconductor device according to claim 8,
パッド電極を有する半導体チップと、パッド電極にボンディングされたワイヤと、このワイヤの一部が表面に露出した状態でパッド電極面を覆って半導体チップを封止する封止材とを有する半導体装置と、パターン形成したプリント基板とを備え、プリント基板のパターン形成面側に対し半導体装置のワイヤ露出面側を対向させ、パッド電極上の封止材の表面に露出するワイヤをプリント基板のパターンに中間物を介して接続したことを特徴とする。 A semiconductor chip having a pad electrode, and the wire is bonded to the pad electrode, and a semiconductor device having a sealing member for sealing the semiconductor chip to cover the pad electrode surface with a partially exposed on the surface of the wire , and a printed circuit board which is patterned to face the wire exposed surface side of the semiconductor device to the pattern formation surface of the printed circuit board, the intermediate wire exposed on the surface of the sealing material on the pad electrode pattern of the printed circuit board characterized by being connected through the object.

【0016】このように、プリント基板のパターン形成面側に対し半導体装置のワイヤ露出面側を対向させ、パッド電極上の封止材の表面に露出するワイヤをプリント基板のパターンに中間物を介して接続するので、半導体装置をプリント基板上に搭載するに際して小型化、薄型化を図ることができる。 [0016] Thus, to face the wire exposed surface side of the semiconductor device to the pattern formation surface of the printed circuit board, through the intermediary of the wire exposed on the surface of the sealing material on the pad electrode pattern of the printed circuit board since connecting Te, miniaturization when mounting the semiconductor device on a printed circuit board, it can be made thinner.

【0017】 [0017]

【発明の実施の形態】この発明の第1の実施の形態を図1および図2に基づいて説明する。 DETAILED DESCRIPTION OF THE INVENTION be described with reference to the first embodiment of the present invention in FIGS. 図1はこの発明の第1の実施の形態の樹脂封止型半導体装置の断面図である。 Figure 1 is a cross-sectional view of a first embodiment of the resin encapsulated semiconductor device of the present invention. 図2はこの発明の第1の実施の形態の半導体装置についてその製造工程に沿って説明するための工程断面図である。 Figure 2 is a process sectional view for explaining along the manufacturing process for the semiconductor device of the first embodiment of the present invention. 図1に示すように、半導体チップ1上のパッド電極2にワイヤ3がボンディングされている。 As shown in FIG. 1, the wire 3 is bonded to the pad electrode 2 on the semiconductor chip 1. また、半導体チップ1はパッド電極2面を覆って液状封止樹脂4 Also, liquid sealing resin 4 semiconductor chip 1 to cover the pad electrode dihedral
を硬化した封止材で封止され、この封止材の表面にワイヤ3の一部が露出している。 It sealed with a sealing material formed by curing a part of the wire 3 is exposed on the surface of the sealing material. この場合、ワイヤ3の一端がパッド電極2上にボンディングされ、他端が同じパッド電極2上にボンディングされることにより、パッド電極2上にワイヤ3のループを形成している。 In this case, one end of the wire 3 is bonded on the pad electrode 2, by the other end is bonded on the same pad electrode 2 to form a loop of the wire 3 on the pad electrode 2. また、封止材の樹脂表面に形成された窪み7にワイヤ3が露出する。 Also, the wire 3 is exposed in the recess 7 formed in the resin surface of the sealing material.

【0018】次にこの半導体装置の製造方法について説明する。 [0018] The following describes a method for manufacturing the semiconductor device. まず、図2(a)に示すように、シリコンウエハにパターン形成した後、個片に切り分けられた半導体チップ1の表面にチップ上パッド電極2を形成する。 First, as shown in FIG. 2 (a), after the patterned silicon wafer to form a tip on the pad electrode 2 on the surface of the semiconductor chip 1 that has been cut into pieces. 次に図2(b)に示すように、チップ上パッド電極2上に金等の金属細線からなるワイヤ3によりループを形成する。 Next, as shown in FIG. 2 (b), to form a loop by the wire 3 made of thin metal wires such as gold on the chip on the pad electrode 2. この時、ワイヤ3のループは一端がチップ上パッド電極2上にボンディングされるとともに他端が同じチップ上パッド電極2上ボンディングされる。 In this case, the loop of the wire 3 at one end is the other end on the same chip pad electrode 2 upper bonding while being bonded on the chip on the pad electrode 2.

【0019】次に図2(c)に示すように、液状封止樹脂4をワイヤ3が表面に露出するように塗布する。 [0019] Then, as shown in FIG. 2 (c), applying a liquid sealing resin 4 as the wire 3 is exposed to the surface. この後、液状封止樹脂4の表面が乾操する程度で柔軟性を持った状態に仮硬化する。 Thereafter, the surface of the liquid sealing resin 4 is temporarily cured state having a flexibility degree which to drying. 次に図2(d)に示すように、 Next, as shown in FIG. 2 (d),
柔軟性を持った状態の封止材のワイヤ3が露出した樹脂表面を金型5で押圧することによって、半導体装置全体を所定の厚さ8に成形するとともに封止材のワイヤ3が露出した部分を所定の高さにする(図1)。 By pressing the resin surface of the wire 3 is exposed in the sealing material in the state having flexibility mold 5, the wire 3 of the sealing material is exposed with molding the entire semiconductor device to a predetermined thickness 8 the portion to a predetermined height (Fig. 1). すなわち、 That is,
金型5にはワイヤ3が表面に露出した部分に突起6が形成してあり、金型5を開放すると樹脂表面に窪み7が形成される。 The mold 5 wire 3 Yes form projections 6 on a portion exposed to the surface, 7 recess on the resin surface when opening the mold 5 is formed. 各窪み7内に金等の金属細線からなるワイヤ3の頂部が露出する。 Top of the wire 3 made of a thin metal wire of gold or the like is exposed in the recess 7. これを外部との接続用電極して用いる。 Using this by connecting electrodes to the outside.

【0020】また別の実施の形態として、金型にはワイヤ3が表面に露出した部分に窪みが形成してあり、金型を開放すると樹脂表面に突起が形成されるようにしてもよい。 [0020] As another embodiment, the mold Yes forming a recess in a portion where the wire 3 is exposed on the surface, may be protrusions on the resin surface when opening the mold is formed. この場合、各突起表面に金等の金属細線からなるワイヤ3が露出する。 In this case, the wire 3 is exposed made of metal thin wire of gold or the like on the projection surface. 以上のようにこの実施の形態によれば、半導体チップ1のパッド電極2にボンディングしたワイヤ3の一部を封止材の表面に露出させてこれを外部との接続用電極として用いるため、従来のようなリードフレームが不要になる。 According to this embodiment as described above, for using a portion of the wire 3 which is bonded to the pad electrode 2 of the semiconductor chip 1 it is exposed on the surface of the sealing member as a connecting electrode to an external, conventional lead frame is not required, such as. これにより、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 Accordingly, miniaturization and thinning of the semiconductor device is achieved enabling high-density mounting. また、部品点数や材料が少なくなり、コストの低減が速成されるとともに、製造組立が容易に行われる。 Also, parts and materials are reduced, the cost reduction of the quick-manufacture assembly is easily performed. さらに、 further,
リードが突出しないため取扱いが容易になり、またリード変形に基づく接合不良等がなくなり歩留りの向上が図られる。 Lead becomes easy to handle because it does not protrude, and improvement in yield eliminates defective bonding or the like based on the read deformation is achieved.

【0021】また、ワイヤ3をループにすることでその起立した状態を成形時においても保持しやすい。 Further, its standing state easily retained even when molded by the wire 3 in the loop. また、 Also,
ワイヤ3の両端が同じ電極パッド2上にボンディングされるので、狭い間隔で電極を形成できる。 Since both ends of the wire 3 is bonded on the same electrode pad 2, it can form the electrode in a narrow interval. この発明の第2の実施の形態を図3および図4に基づいて説明する。 It will be described with reference to the second embodiment of the present invention in FIGS.
図3はこの発明の第2の実施の形態の樹脂封止型半導体装置の断面図、図4はこの発明の第2の実施の形態の半導体装置についてその製造工程に沿って説明するための工程断面図である。 Figure 3 is a second embodiment of a cross-sectional view of a resin sealed semiconductor device, FIG. 4 is a process for illustrating along a semiconductor device of the second embodiment of the present invention to the production process of the present invention it is a cross-sectional view. 図3に示すように、この実施の形態ではワイヤ3の一端がパッド電極2上にボンディングされ、他端がパッド電極2近傍でこのパッド電極2と分離したパッド9にボンディングされている。 As shown in FIG. 3, one end of the wire 3 in this embodiment is bonded on the pad electrode 2, the other end is bonded to a pad 9 separate from the pad electrode 2 in the pad electrode 2 near. その他の構成は、第1の実施の形態と同様である。 Other configurations are the same as in the first embodiment.

【0022】次にこの半導体装置の製造方法について説明する。 [0022] The following describes a method for manufacturing the semiconductor device. まず図4(a)に示すように、シリコンウエハにパターン形成した後、個片に切り分けられた半導体チップ1の表面にチップ上パッド電極2を形成する。 First, as shown in FIG. 4 (a), after the patterned silicon wafer to form a tip on the pad electrode 2 on the surface of the semiconductor chip 1 that has been cut into pieces. 次に図4(b)に示すようにチップ上パッド電極2上に金等の金属細線からなるワイヤ3によりループを形成する。 Then to form a loop by the wire 3 made of thin metal wires such as gold on the chip on the pad electrode 2 as shown in Figure 4 (b).
この時、ワイヤ3のループは一端がチップ上パッド電極2上にボンディングされるとともに他端がチップ上パッド電極2近傍でこのパッド電極2と分離したパッド9にボンディングされる。 In this case, the loop of the wire 3 is bonded to the pad 9 and the other end is separated from the pad electrode 2 in the pad electrode 2 near the chip with one end is bonded on the chip on the pad electrode 2.

【0023】次に図4(c)に示すように、液状封止樹脂4をワイヤ3が表面に露出するように塗布する。 [0023] Next, as shown in FIG. 4 (c), applying a liquid sealing resin 4 as the wire 3 is exposed to the surface. この後、液状封止樹脂4の表面が乾換する程度で柔軟性を持った状態に仮硬化する。 Thereafter, the surface of the liquid sealing resin 4 is temporarily cured state having a flexibility degree of Inui換. 次に図4(d)に示すように、 Next, as shown in FIG. 4 (d),
柔軟性を持った状態の封止材のワイヤ3が露出した樹脂表面を金型5で押圧することによって、半導体装置全体を所定の厚さ8に成形するとともに封止材のワイヤ3が露出した部分を所定の高さにする(図3)。 By pressing the resin surface of the wire 3 is exposed in the sealing material in the state having flexibility mold 5, the wire 3 of the sealing material is exposed with molding the entire semiconductor device to a predetermined thickness 8 the portion to a predetermined height (Figure 3). すなわち、 That is,
金型5にはワイヤ3が表面に露出した部分に突起6が形成してあり、金型5を開放すると樹脂表面に窪み7が形成される。 The mold 5 wire 3 Yes form projections 6 on a portion exposed to the surface, 7 recess on the resin surface when opening the mold 5 is formed. 各窪み7内に金等の金属細線からなるワイヤ3の頂部が露出する。 Top of the wire 3 made of a thin metal wire of gold or the like is exposed in the recess 7. これを外部との接続用電極して用いる。 Using this by connecting electrodes to the outside.

【0024】また別の実施の形態として、金型にはワイヤ3が表面に露出した部分に窪みが形成してあり、金型を開放すると樹脂表面に突起が形成されるようにしてもよい。 [0024] As another embodiment, the mold Yes forming a recess in a portion where the wire 3 is exposed on the surface, may be protrusions on the resin surface when opening the mold is formed. この場合、各突起表面に金等の金属細線からなるワイヤ3が露出する。 In this case, the wire 3 is exposed made of metal thin wire of gold or the like on the projection surface. 以上のようにこの実施の形態によれば、第1の実施の形態と同様にワイヤをループにすることでその起立した状態を成形時においても保持しやすい。 According to this embodiment as described above, the standing state also easy to hold during molding by the first embodiment of the loop wire like the embodiment. また、ワイヤの両端が上記のように別の位置にボンディングされるので安定した状態で接続される。 Both ends of the wire are connected in a stable state because it is bonded to another location as described above.

【0025】この発明の第3の実施の形態を図5および図6に基づいて説明する。 [0025] will be described with reference to the third embodiment of the present invention in FIGS. 図5はこの発明の第3の実施の形態の樹脂封止型半導体装置の断面図、図6はこの発明の第3の実施の形態の半導体装置についてその製造工程に沿って説明するための工程断面図である。 Figure 5 is a third cross-sectional view of a resin sealed semiconductor device of the embodiment, FIG. 6 is a third embodiment of the semiconductor device process for explaining along the production process for the present invention of the invention it is a cross-sectional view. 図5に示すように、この実施の形態ではワイヤ3の一端がパッド電極2上にボンディングされ、他端が封止材の表面に露出するように垂直に立ち上がったワイヤ3を形成している。 As shown in FIG. 5, one end of the wire 3 in this embodiment is bonded on the pad electrode 2, the other end forms a wire 3 that rises vertically so as to be exposed on the surface of the sealing material. その他の構成は、第1の実施の形態と同様である。 Other configurations are the same as in the first embodiment.

【0026】次にこの半導体装置の製造方法について説明する。 [0026] The following describes a method for manufacturing the semiconductor device. まず図6(a)に示すように、シリコンウエハにパターン形成した後、個片に切り分けられた半導体チップ1の表面にチップ上パッド電極2を形成する。 First, as shown in FIG. 6 (a), after the patterned silicon wafer to form a tip on the pad electrode 2 on the surface of the semiconductor chip 1 that has been cut into pieces. 次に図6(b)に示すようにチップ上パッド電極2上に金等の金属細線からなるワイヤ3を形成する。 Then to form the wire 3 made of thin metal wires such as gold on the chip on the pad electrode 2 as shown in Figure 6 (b). この時、ワイヤ3は一端がチップ上パッド電極2上にボンディングされるとともに、そこを起点にある程度の長さで切断し、 At this time, the wire 3 is one end is bonded on the chip on the pad electrode 2 was cut at a certain length there as a starting point,
液状封止樹脂4を塗布した際に樹脂の表面に露出するように垂直に立ち上がったワイヤ3を形成する。 Upon applying a liquid sealing resin 4 to form a wire 3 that rises vertically so as to be exposed on the surface of the resin.

【0027】次に図6(c)に示すように、液状封止樹脂4をワイヤ3が表面に露出するように塗布する。 [0027] Next, as shown in FIG. 6 (c), applying a liquid sealing resin 4 as the wire 3 is exposed to the surface. この後、液状封止樹脂4の表面が乾操する程度で柔軟性を持った状態に仮硬化する。 Thereafter, the surface of the liquid sealing resin 4 is temporarily cured state having a flexibility degree which to drying. 次に図6(d)に示すように柔軟性を持った状態の封止材のワイヤ3が露出した樹脂表面を金型5で押圧することによって、半導体装置全体を所定の厚さ8に成形するとともに封止材のワイヤ3が露出した部分を所定の高さにする(図5)。 Then by pressing the resin surface of the wire 3 of the sealing material in the state having flexibility is exposed as shown in FIG. 6 (d) in the mold 5, forming the whole semiconductor device to a predetermined thickness 8 the portion where the wires 3 of the sealing material is exposed to a predetermined height while (Fig. 5). すなわち、金型5にはワイヤ3が表面に露出した部分に突起6が形成してあり、金型5を開放すると樹脂表面に窪み7が形成される。 That is, the mold 5 wire 3 Yes form projections 6 on a portion exposed to the surface, 7 recess on the resin surface when opening the mold 5 is formed. 各窪み7内に金等の金属細線からなるワイヤ3 Wire 3 made of thin metal wires such as gold in each recess 7
の他端が露出する。 The other end is exposed to. これを外部との接続用電極して用いる。 Using this by connecting electrodes to the outside.

【0028】また別の実施の形態として、金型にはワイヤ3が表面に露出した部分に窪みが形成してあり、金型を開放すると樹脂表面に突起が形成されるようにしてもよい。 [0028] As another embodiment, the mold Yes forming a recess in a portion where the wire 3 is exposed on the surface, may be protrusions on the resin surface when opening the mold is formed. この場合、各突起表面に金等の金属細線からなるワイヤ3が露出する。 In this case, the wire 3 is exposed made of metal thin wire of gold or the like on the projection surface. 以上のようにこの実施の形態によれば、ワイヤ3の一端がパッド電極2上にボンディングされ、他端が封止材の表面に露出するように垂直に立ち上がったワイヤ3を形成したので、1回のボンディングで電極を形成することができ、構造が簡単で容易に製造できる。 According to this embodiment as described above, one end of the wire 3 is bonded on the pad electrode 2 and the other end to form a wire 3 that rises vertically so as to be exposed on the surface of the sealing member, 1 it is possible to form an electrode in times of bonding, the structure can be simple and easily manufactured.

【0029】この発明の第4の実施の形態を図7および図8に基づいて説明する。 [0029] will be described with reference to a fourth embodiment of the present invention in FIGS. 図7はこの発明の第4の実施の形態の樹脂封止型半導体装置の断面図、図8はこの発明の第4の実施の形態の半導体装置についてその製造工程に沿って説明するための工程断面図である。 Figure 7 is a cross-sectional view of a fourth embodiment of a resin sealed semiconductor device of the present invention, Figure 8 is a process for explaining along the manufacturing process for the semiconductor device of the fourth embodiment of the present invention it is a cross-sectional view. 図7に示すように、この実施の形態の半導体装置は第1の実施の形態の半導体装置と同様であるが製造方法が異なる。 As shown in FIG. 7, the semiconductor device of this embodiment is similar to the semiconductor device of the first embodiment manufacturing method is different.

【0030】すなわち、図8(a)に示すように、シリコンウエハ10にパターン形成した後、個片に切り分けられる前の半導体チップ1の表面にチップ上パッド電極2を形成する。 [0030] That is, as shown in FIG. 8 (a), after the patterned silicon wafer 10, the semiconductor chip 1 of the surface prior to being cut into individual pieces to form a tip on the pad electrode 2. 次に図8(b)に示すように、チップ上パッド電極2上に金等の金属細線からなるワイヤ3によりループを形成する。 Next, as shown in FIG. 8 (b), to form a loop by the wire 3 made of thin metal wires such as gold on the chip on the pad electrode 2. この時のループの形状は第1の実施の形態の図1(b)に示したものと同様である。 The shape of the case of the loop is the same as that shown in FIG. 1 (b) of the first embodiment.

【0031】次に図8(c)に示すように、液状封止樹脂4をワイヤ3が表面に露出するようにウエハ10上の全域に塗布する。 [0031] Next, as shown in FIG. 8 (c), the liquid sealing resin 4 wire 3 is coated all over the wafer 10 so as to be exposed on the surface. この後、液状封止樹脂4の表面が乾燥する程度で柔軟性を持った状態に仮硬化する。 Thereafter, the temporarily cured state that the surface of the liquid sealing resin 4 having a flexibility degree of drying. 次に図8 Next, FIG. 8
(d)に示すように、柔軟性を持った状態の封止材のワイヤ3が露出した樹脂表面を金型5で押圧することによって、半導体装置全体を所定の厚さ8に成形するとともに封止材のワイヤ3が露出した部分を所定の高さにする(図7)。 (D), the sealed together by the resin surface of the wire 3 of the sealing material in the state having flexibility exposed pressed by the mold 5, to mold the entire semiconductor device to a predetermined thickness 8 the portion where the wires 3 of sealant was exposed to a predetermined height (Fig. 7). すなわち、金型5にはワイヤ3が表面に露出した部分に突起6が形成してあり、金型5を開放すると樹脂表面に窪み7が形成される。 That is, the mold 5 wire 3 Yes form projections 6 on a portion exposed to the surface, 7 recess on the resin surface when opening the mold 5 is formed. 各窪み7内に金等の金属細線からなるワイヤ3の頂部が露出する。 Top of the wire 3 made of a thin metal wire of gold or the like is exposed in the recess 7. これを外部との接続用電極して用いる。 Using this by connecting electrodes to the outside. この後、図7に示すように、ウエハ10をチップ個片に切り分けて単体の半導体装置を形成する。 Thereafter, as shown in FIG. 7, the wafer 10 to form the semiconductor device itself to cut into the chip pieces.

【0032】また別の実施の形態として、金型にはワイヤ3が表面に露出した部分に窪みが形成してあり、金型を開放すると樹脂表面に突起が形成されるようにしてもよい。 [0032] As another embodiment, the mold Yes forming a recess in a portion where the wire 3 is exposed on the surface, may be protrusions on the resin surface when opening the mold is formed. この場合、各突起表面に金等の金属細線からなるワイヤ3が露出する。 In this case, the wire 3 is exposed made of metal thin wire of gold or the like on the projection surface. 以上のようにこの実施の形態によれば、ウエハ10の状態で外部との接続用電極となるワイヤ3を形成するので、さらに生産性が向上する。 According to this embodiment as described above, since the forming wire 3 as a connection electrode to an external state of the wafer 10, further productivity can be improved. その他の構成効果は、第1の実施の形態と同様である。 Other configurations effects are the same as in the first embodiment.

【0033】この発明の第5の実施の形態を図9に基づいて説明する。 [0033] will be described with reference to a fifth embodiment of the present invention in FIG. 図9はこの発明の第5の実施の形態の半導体装置の実装構造について説明するための断面図である。 Figure 9 is a sectional view for explaining a mounting structure of a semiconductor device of the fifth embodiment of the present invention. プリント基板11に実装される半導体装置は、第1 Semiconductor devices mounted on the printed board 11 is first
の実施の形態の半導体装置と同様であり、半導体チップ1、ワイヤ3、液状封止樹脂4からなる封止材を備えている。 It is similar to the embodiment of the semiconductor device, the semiconductor chip 1, the wires 3, and a sealing member made of a liquid sealing resin 4. プリント基板11にはランドパターン12が形成されている。 Land pattern 12 is formed on the printed circuit board 11. このランドパターン12の形成面側に対し、半導体装置のワイヤ3の露出面側を対向させて、パッド電極2上の封止材の表面に露出したワイヤ3とランドパターン12とを中間物13を介して接合し両者を電気的に接続することにより、半導体装置をプリント基板11に搭載固定する。 To form surface side of the land pattern 12, and are opposed to the exposed surface side of the wire 3 of the semiconductor device, the wire 3 and the land pattern 12 and intermediate 13 exposed on the surface of the sealing material on the pad electrode 2 by electrically connecting both joined through, mounted fix the semiconductor device to the printed circuit board 11.

【0034】この実施の形態によれば、半導体装置をプリント基板11上に搭載するに際して小型化、薄型化を図ることができる。 According to this embodiment, miniaturization when mounting the semiconductor device on the printed circuit board 11, it can be made thinner. この発明の第6の実施の形態を図1 Figure 1 a sixth embodiment of the present invention
0に基づいて説明する。 It will be described with reference to 0. 図10はこの発明の第6の実施の形態の半導体装置の実装構造について説明するための断面図である。 Figure 10 is a sectional view for explaining a mounting structure of a semiconductor device of the sixth embodiment of the present invention. プリント基板11に実装される半導体装置は複数の半導体装置で構成され、各半導体装置は第1 Semiconductor devices mounted on the printed board 11 is composed of a plurality of semiconductor devices, each semiconductor device first
の実施の形態の半導体装置と同様であり、半導体チップ1、ワイヤ3、液状封止樹脂4からなる封止材を備えている。 It is similar to the embodiment of the semiconductor device, the semiconductor chip 1, the wires 3, and a sealing member made of a liquid sealing resin 4. また、プリント基板11には半導体装置を収納する凹部11aが形成され、その周囲にランドパターン1 The recess 11a for accommodating a semiconductor device is formed on a printed circuit board 11, a land pattern 1 on the periphery thereof
2が形成されている。 2 is formed. 実装状態では、複数の半導体装置を、それぞれのワイヤ露出面側を対向させて、パッド電極2上の封止材の表面に露出したワイヤ3どうしを中間物13を介して接合し両者を電気的に接続する。 In the mounted state, a plurality of semiconductor devices, each of the wires exposed surface side are opposed, electrically both joining and if the wire 3 is exposed on the surface of the sealing material on the pad electrode 2 via the intermediate 13 to connect to. さらに、半導体装置どうしの接続に用いなかった他の露出したワイヤ3をランドパターン12と中間物13を介して接合し両者を電気的に接続することにより、半導体装置をプリント基板11に搭載固定する。 Furthermore, by electrically connecting the two wires 3 and other exposed that was not used in the semiconductor device each other for connection by bonding through a land pattern 12 and intermediate 13, mounted fix the semiconductor device to the printed circuit board 11 . この場合、複数の半導体装置のうちの一部の半導体装置を凹部11aに収納することで薄型化を図ることができる。 In this case, it can be made thinner by receiving a portion of a semiconductor device of the plurality of semiconductor devices in the recess 11a.

【0035】この実施の形態によれば、半導体装置どうしを電気的、機械構造的に直接に近い状態で接続することができ、半導体装置のコンパクトなハイブリッド化が可能となる。 According to this embodiment, an electrical semiconductor device each other, can be connected in a state close to the machine structure and directly, it is possible to compact hybrid of the semiconductor device. なお、第4の実施の形態の製造方法を第2、第3の実施の形態に適用してもよい。 Incidentally, the manufacturing method of the fourth embodiment the second, may be applied to the third embodiment. また、第5、 In addition, fifth,
第6の実施の形態において、第2または第3の実施の形態の半導体装置を用いてもよい。 In the sixth embodiment, it may be a semiconductor device of the second or third embodiment.

【0036】 [0036]

【発明の効果】この発明の請求項1記載の半導体装置によれば、半導体チップのパッド電極にボンディングしたワイヤの一部を封止材の表面に露出させてこれを外部との接続用電極として用いるため、従来のようなリードフレームが不要になる。 Effects of the Invention] According to the semiconductor device according to claim 1 of the present invention, a portion of the wire bonded to pad electrodes of the semiconductor chip which is exposed on the surface of the sealing member as a connecting electrode to an external for use, the lead frame as in the prior art is not required. これにより、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 Accordingly, miniaturization and thinning of the semiconductor device is achieved enabling high-density mounting. また、 Also,
部品点数や材料が少なくなり、コストの低減が速成されるとともに、製造組立が容易に行われる。 Parts and materials is reduced, the cost reduction of the quick-manufacture assembly is easily performed. さらに、リードが突出しないため取扱いが容易になり、またリード変形に基づく接合不良等がなくなり製造上の品質が安定し歩留りの向上が図られる。 Further, it becomes easy to handle because the lead does not protrude, and the quality of the manufacturing eliminates defective bonding or the like based on the read deformation is achieved improvement in stable yield.

【0037】請求項2では、ワイヤの一端をパッド電極上にボンディングし、他端を同じパッド電極上にボンディングすることにより、パッド電極上にワイヤのループを形成したので、封止材の表面に露出したワイヤのループの頂部が外部との接続用電極となる。 [0037] According to claim 2, bonding the one end of the wire on the pad electrode, by bonding the other end to the same pad electrode, since the forming wire loop on the pad electrode, on the surface of the sealing member top of the exposed wire loop is the connecting electrode to the outside. この場合、ワイヤをループにすることでその起立した状態を成形時等においても保持しやすい。 In this case, the standing state also easy to hold in a molding or the like by the wire loop. また、ワイヤの両端が同じ電極パッド上にボンディングされるので、狭い間隔で電極を形成できる。 Moreover, since both ends of the wire is bonded to the same electrode on the pad, it can form the electrode in a narrow interval.

【0038】請求項3では、ワイヤの一端をパッド電極上にボンディングし、他端をパッド電極近傍でこのパッド電極と分離した位置にボンディングすることにより、 [0038] According to claim 3, by bonding the one end of the wire on the pad electrode is bonded at a position separated from the pad electrode and the other end in the pad electrode vicinity,
ワイヤのループが形成され請求項2と同様に封止材の表面に露出したワイヤのループの頂部が外部との接続用電極となり、ワイヤをループにすることでその起立した状態を成形時等においても保持しやすい。 Top of the exposed wire loop on the surface of the wire loop is formed similarly encapsulant in claim 2 is the connecting electrodes with the outside, and the upright state by the wire loop in the molding or the like easily retained. また、ワイヤの両端が上記のように別の位置にボンディングされるので安定した状態で接続される。 Both ends of the wire are connected in a stable state because it is bonded to another location as described above.

【0039】請求項4では、ワイヤの一端をパッド電極上にボンディングし、他端を封止材の表面に露出するように垂直に立ち上げたので、封止材の表面から露出した他端が外部との接続用電極となる。 [0039] According to claim 4, bonding the one end of the wire on the pad electrode, the other end was a launched vertically so as to be exposed at the surface of the sealing member and the other end exposed from the surface of the sealing material a connection electrode to the outside. また、1回のボンディングで電極を形成するので構造が簡単で容易に製造できる。 The structure can be simple and easily manufactured because it forms an electrode in a single bonding. この発明の請求項5記載の半導体装置によれば、 According to the semiconductor device according to claim 5, wherein the present invention,
複数の半導体装置のワイヤ露出面側を対向させ、パッド電極上の封止材の表面に露出する前記ワイヤどうしを中間物を介して接続するので、半導体装置どうしを電気的、機械構造的に直接に近い状態で接続することができ、半導体装置のコンパクトなハイブリッド化が可能となる。 Are opposed to the wire exposed surface side of the plurality of semiconductor devices, since the wire each other to expose the surface of the sealing material on the pad electrode is connected through the intermediary electrical, mechanical structure and directly semiconductor devices each other can be connected in a state close to, it is possible to compact hybrid of the semiconductor device.

【0040】この発明の請求項6記載の半導体装置の製造方法によれば、半導体チップの表面に形成されたパッド電極上にワイヤを形成し、ワイヤの一部が表面に露出するように液状封止樹脂を半導体チップ上に塗布し、液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化し、液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに封止材のワイヤが露出した部分を所定の高さにするので、従来のようなリードフレームが不要となり、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 According to the manufacturing method of a semiconductor device according to claim 6 of the present invention, the wire is formed on the pad electrodes formed on the surface of the semiconductor chip, a liquid seal as part of the wire is exposed to the surface applying a sealing resin on a semiconductor chip, a liquid sealing resin is temporarily cured in the state where the surface with a flexible enough to drying, pressing the surface of the sealing member in a state of pre-curing the liquid sealing resin since the sealing material of the wire portion of predetermined height exposed with molding the entire predetermined thickness by a lead frame as in the prior art is unnecessary, miniaturization and thinning of the semiconductor device in FIG. It is made possible high-density mounting. また、部品点数や材料が少なくなり、 In addition, the number of parts and materials is reduced,
コストの低減、生産性の向上を図ることができる。 Cost reduction, it is possible to improve the productivity. また、樹脂成形の際、液状封止樹脂を用いているのでワイヤの変形を防止できる。 Also, when the resin molding, because of the use of liquid sealing resin can be prevented wire deformation. さらに、リードが突出しないため取扱いが容易になり、またリード変形に基づく接合不良等がなくなり歩留りの向上が図られる。 Further, it becomes easy to handle because the lead does not protrude, and improvement in yield eliminates defective bonding or the like based on the read deformation is achieved. また、封止材のワイヤが露出した部分が外部との接続用電極となり、 The portion sealing material of the wire is exposed becomes the connecting electrodes with the outside,
この部分を成形によって所定の高さにするので、樹脂成形と同時に電極を所定位置に形成できる。 Since this portion to a predetermined height by the molding can be formed at the same time the electrode and the resin molding in place.

【0041】この発明の請求項7記載の半導体装置の製造方法によれば、ウエハ上で複数の半導体チップの表面に形成されたパッド電極上にワイヤを形成し、ワイヤの一部が表面に露出するように液状封止樹脂をウエハ全域に塗布し、液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化し、液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに封止材のワイヤが露出した部分を所定の高さにし、封止材を成形したウエハを半導体チップの個片に切り分けるので、従来のようなリードフレームが不要となり、半導体装置の小型化および薄型化が図られ高密度実装が可能になる。 [0041] According to the manufacturing method of a semiconductor device according to claim 7 of the present invention, the wire is formed into a plurality of semiconductor chips on a pad electrode formed on the surface on the wafer, the exposed portion of the wire to the surface the liquid sealing resin is applied to the wafer throughout to, the liquid sealing resin is temporarily cured in the state where the surface with a flexible enough to drying, the liquid sealing resin sealant temporarily cured state the portion where the wire is exposed encapsulant with molding the entire predetermined thickness by pressing the surface to a predetermined height, since carving molded wafer sealant into pieces of the semiconductor chips, a conventional the lead frame is not required, such as, reduction in size and thickness of the semiconductor device is achieved enabling high-density mounting. また、ウエハの状態で外部との接続用電極となるワイヤを形成するので、さらに生産性が向上する。 Also, because it forms a wire serving as a connection electrode to an external state of the wafer, further productivity can be improved. その他、請求項5と同様の作用効果がある。 Other, the same effects as claim 5.

【0042】この発明の請求項8記載の半導体装置の実装構造によれば、プリント基板のパターン形成面側に対し半導体装置のワイヤ露出面側を対向させ、パッド電極上の封止材の表面に露出するワイヤをプリント基板のパターンに中間物を介して接続するので、半導体装置をプリント基板上に搭載するに際して小型化、薄型化を図ることができる。 [0042] According to the mounting structure of the semiconductor device according to claim 8, wherein the present invention, are opposed to the wire exposed surface side of the semiconductor device to the pattern formation surface side of the printed circuit board, the surface of the sealing material on the pad electrode since connecting exposed wire through the intermediate to the pattern of the printed circuit board, downsizing when mounting the semiconductor device on a printed circuit board, it can be made thinner.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】この発明の第1の実施の形態の半導体装置の断面図である。 1 is a cross-sectional view of a semiconductor device of the first embodiment of the present invention.

【図2】この発明の第1の実施の形態の半導体装置の製造工程順の断面図である。 2 is a cross-sectional view of the order of manufacturing steps of the semiconductor device of the first embodiment of the present invention.

【図3】この発明の第2の実施の形態の半導体装置の断面図である。 3 is a cross-sectional view of a semiconductor device of the second embodiment of the present invention.

【図4】この発明の第2の実施の形態の半導体装置の製造工程順の断面図である。 4 is a cross-sectional view of the order of manufacturing steps of the semiconductor device of the second embodiment of the present invention.

【図5】この発明の第3の実施の形態の半導体装置の断面図である。 5 is a cross-sectional view of a semiconductor device of the third embodiment of the present invention.

【図6】この発明の第3の実施の形態の半導体装置の製造工程順の断面図である。 6 is a cross-sectional view of the order of manufacturing steps of the semiconductor device of the third embodiment of the present invention.

【図7】この発明の第4の実施の形態の半導体装置の断面図である。 7 is a cross-sectional view of a semiconductor device of the fourth embodiment of the present invention.

【図8】この発明の第4の実施の形態の半導体装置の製造工程順の断面図である。 8 is a cross-sectional view of the order of manufacturing steps of the semiconductor device of the fourth embodiment of the present invention.

【図9】この発明の第5の実施の形態の半導体装置の実装構造の断面図である。 9 is a cross-sectional view of a mounting structure of a semiconductor device of the fifth embodiment of the present invention.

【図10】この発明の第6の実施の形態の半導体装置の実装構造の断面図である。 10 is a cross-sectional view of a mounting structure of a semiconductor device of the sixth embodiment of the present invention.

【図11】従来の半導体装置の断面図である。 11 is a cross-sectional view of a conventional semiconductor device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 半導体チップ 2 チップ上パッド電極 3 ワイヤ 4 液状封止樹脂 5 金型 6 突起 7 窪み 8 半導体装置の所定厚さ 9 分離したパッド 10 シリコンウエハ 11 プリント基板 12 ランドパターン 13 中間物 14 半導体チップ 15 接着剤 16 ダイパッド 17 内部リード 18 外部リード 19 ボンディングワイヤ 20 パッド電極 21 樹脂モールド体 1 semiconductor chip 2 chips on the pad electrode 3 wire 4 liquid sealing resin 5 predetermined thickness 9 separate pad 10 silicon wafer 11 PCB 12 land pattern 13 intermediate mold 6 protrusions 7 recess 8 semiconductor device 14 semiconductor chip 15 bonded agent 16 die pad 17 inside the lead 18 external lead 19 bonding wire 20 pad electrode 21 resin molded body

───────────────────────────────────────────────────── フロントページの続き (72)発明者 ▲濱▼谷 毅 大阪府高槻市幸町1番1号 松下電子工業 株式会社内 ────────────────────────────────────────────────── ─── of the front page continued (72) inventor ▲ Hama ▼ Takeshi Tani Osaka Takatsuki Saiwaicho No. 1 No. 1 Matsushita Electronics Co., Ltd. in

Claims (8)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 パッド電極を有する半導体チップと、前記パッド電極にボンディングされたワイヤと、前記パッド電極面を覆って前記半導体チップを封止する封止材とを備え、前記ワイヤの一部が前記封止材の表面に露出していることを特徴とする半導体装置。 A semiconductor chip having a 1. A pad electrode, and the bonded wires to the pad electrode, and a sealing member for sealing the semiconductor chip to cover the pad electrode surface, a portion of the wire wherein a exposed on the surface of the sealing member.
  2. 【請求項2】 ワイヤの一端をパッド電極上にボンディングし、他端を同じパッド電極上にボンディングすることにより、前記パッド電極上にワイヤのループを形成した請求項1記載の半導体装置。 Wherein bonding the one end of the wire on the pad electrode, by bonding the other end to the same pad electrode, a semiconductor device of claim 1, wherein the formation of the wire loop on the pad electrode.
  3. 【請求項3】 ワイヤの一端をパッド電極上にボンディングし、他端を前記パッド電極近傍でこのパッド電極と分離した位置にボンディングした請求項1記載の半導体装置。 Wherein bonding the one end of the wire on the pad electrode, the semiconductor device according to claim 1, wherein the other end was bonded at a position separated from the pad electrode in the pad electrode vicinity.
  4. 【請求項4】 ワイヤの一端をパッド電極上にボンディングし、他端を封止材の表面に露出するように垂直に立ち上げた請求項1記載の半導体装置。 4. A bonding one end of the wire on the pad electrode, the other end a semiconductor device according to claim 1, wherein launched vertically so as to expose the surface of the sealing member a.
  5. 【請求項5】 パッド電極を有する半導体チップと、前記パッド電極にボンディングされたワイヤと、このワイヤの一部が表面に露出した状態で前記パッド電極面を覆って前記半導体チップを封止する封止材とを有する複数の半導体装置を備え、前記複数の半導体装置のワイヤ露出面側を対向させ、前記パッド電極上の前記封止材の表面に露出する前記ワイヤどうしを中間物を介して接続したことを特徴とする半導体装置。 A semiconductor chip having a 5. A pad electrode, sealed to seal the wire that is bonded to the pad electrode, the semiconductor chip to cover the pad electrode surface with a partially exposed on the surface of the wire comprising a plurality of semiconductor devices having a sealing material, connecting the wires exposed surface side of the plurality of semiconductor devices are opposed, said wire each other to expose the surface of the sealing material on the pad electrode through the intermediary the semiconductor device characterized by the.
  6. 【請求項6】 半導体チップの表面に形成されたパッド電極上にワイヤを形成する工程と、前記ワイヤの一部が表面に露出するように液状封止樹脂を前記半導体チップ上に塗布する工程と、前記液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化する工程と、前記液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに前記封止材の前記ワイヤが露出した部分を所定の高さにする工程とを含む半導体装置の製造方法。 6. A process of forming a wire on the semiconductor chip on the pad electrodes formed on the surface of the steps of applying a liquid sealing resin so that a portion of the wire is exposed on the surface on the semiconductor chip , given the whole by pressing the step of temporarily cured in the state where the liquid sealing resin surface having a flexibility enough to dry the surface of the sealing material in a state of pre-curing the liquid sealing resin method for producing the said wire is exposed portion of the sealing material with molding in the thickness of the semiconductor device including the step of a predetermined height.
  7. 【請求項7】 ウエハ上で複数の半導体チップの表面に形成されたパッド電極上にワイヤを形成する工程と、前記ワイヤの一部が表面に露出するように液状封止樹脂を前記ウエハ全域に塗布する工程と、前記液状封止樹脂を表面が乾燥する程度に柔軟性を持った状態で仮硬化する工程と、前記液状封止樹脂を仮硬化した状態の封止材の表面を押圧することによって全体を所定の厚さに成形するとともに、前記封止材の前記ワイヤが露出した部分を所定の高さにする工程と、前記封止材を成形した前記ウエハを前記半導体チップの個片に切り分ける工程とを含む半導体装置の製造方法。 7. A process for forming a plurality of semiconductor chips wire on a pad electrode formed on the surface on the wafer, the liquid sealing resin so that a portion of the wire is exposed to a surface on the entire wafer a step of applying, the step of temporarily cured in the state where the liquid sealing resin surface having a flexibility enough to drying, pressing the surface of the sealing member in a state of pre-curing the liquid sealing resin by with molding the entire predetermined thickness, a step of the wire is exposed portion of the sealing member at a predetermined height, the wafer obtained by molding the sealing material into pieces of the semiconductor chip the method of manufacturing a semiconductor device including the step of carving.
  8. 【請求項8】 パッド電極を有する半導体チップと、前記パッド電極にボンディングされたワイヤと、このワイヤの一部が表面に露出した状態で前記パッド電極面を覆って前記半導体チップを封止する封止材とを有する半導体装置と、パターン形成したプリント基板とを備え、前記プリント基板のパターン形成面側に対し前記半導体装置のワイヤ露出面側を対向させ、前記パッド電極上の前記封止材の表面に露出する前記ワイヤを前記プリント基板のパターンに中間物を介して接続したことを特徴とする半導体装置の実装構造。 A semiconductor chip having a 8. pad electrode, sealed to seal the wire that is bonded to the pad electrode, the semiconductor chip to cover the pad electrode surface with a partially exposed on the surface of the wire a semiconductor device having a sealing member, and a printed circuit board which is patterned, wherein is opposed wire exposed surface side of the semiconductor device to the pattern formation surface of the printed circuit board, of the sealing material on the pad electrode mounting structure of a semiconductor device, characterized in that the wire exposed on the surface are connected via an intermediate product in the pattern of the printed circuit board.
JP10059147A 1998-03-11 1998-03-11 Semiconductor device and its manufacture and mounting structure of the device Pending JPH11260856A (en)

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