JP2003007933A - Resin-sealing semiconductor device - Google Patents
Resin-sealing semiconductor deviceInfo
- Publication number
- JP2003007933A JP2003007933A JP2001195328A JP2001195328A JP2003007933A JP 2003007933 A JP2003007933 A JP 2003007933A JP 2001195328 A JP2001195328 A JP 2001195328A JP 2001195328 A JP2001195328 A JP 2001195328A JP 2003007933 A JP2003007933 A JP 2003007933A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- resin
- sealing resin
- semiconductor device
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ヒートシンクと、
このヒートシンクの一面側に固定された半導体素子と、
ヒートシンクの他面側を露出させつつヒートシンク及び
半導体素子を包み込むように封止する封止用樹脂とを備
える樹脂封止型半導体装置に関する。TECHNICAL FIELD The present invention relates to a heat sink,
A semiconductor element fixed to one surface side of this heat sink,
The present invention relates to a resin-encapsulated semiconductor device including a sealing resin that seals a heat sink and a semiconductor element so as to wrap the heat sink while exposing the other surface of the heat sink.
【０００２】[0002]
【従来の技術】従来のこの種の半導体装置の一般的な断
面構成を図８に示す。Ｃｕ等の放熱性に優れた材料より
なるヒートシンク１の一面１ａには、接着剤や半田等の
接続部材３を介して半導体チップ（半導体素子）２が固
定されている。2. Description of the Related Art FIG. 8 shows a general cross-sectional structure of a conventional semiconductor device of this type. A semiconductor chip (semiconductor element) 2 is fixed to one surface 1a of a heat sink 1 made of a material having excellent heat dissipation property such as Cu via a connecting member 3 such as an adhesive or solder.
【０００３】半導体チップ２は、リード４にボンディン
グワイヤ５を介して電気的に接続されている。そして、
ヒートシンク１の他面１ｂ側を露出させつつヒートシン
ク１及び半導体チップ２、更には半導体チップ２とワイ
ヤ５の電気的接続部が、エポキシ樹脂等よりなる封止用
樹脂６によって包み込むように封止されている。The semiconductor chip 2 is electrically connected to the leads 4 via bonding wires 5. And
While exposing the other surface 1b side of the heat sink 1, the heat sink 1 and the semiconductor chip 2, and further, the electrical connection portion between the semiconductor chip 2 and the wire 5 is sealed so as to be wrapped with a sealing resin 6 made of epoxy resin or the like. ing.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記従
来の樹脂封止型半導体装置においては、冷熱サイクルが
加わったとき等、ヒートシンク１と封止用樹脂６との間
で、両者の線膨張係数の差により過大な応力が発生し、
その応力により、封止用樹脂６にクラック１００が発生
する、という問題がある。However, in the above-mentioned conventional resin-encapsulated semiconductor device, the linear expansion coefficient of the heat-sink 1 and the encapsulating resin 6 is increased between the heat sink 1 and the encapsulating resin 6 when a heat cycle is applied. The difference causes excessive stress,
There is a problem in that the stress causes cracks 100 in the sealing resin 6.
【０００５】そこで、本発明は上記問題に鑑み、ヒート
シンクと封止用樹脂との線膨張係数の差により生じる応
力によって封止用樹脂にクラックが発生するのを抑制す
ることを目的とする。Therefore, in view of the above problems, it is an object of the present invention to suppress the occurrence of cracks in the sealing resin due to the stress caused by the difference in the coefficient of linear expansion between the heat sink and the sealing resin.
【０００６】[0006]
【課題を解決するための手段】上記目的を達成するた
め、請求項１に記載の発明では、ヒートシンク（１）
と、このヒートシンクの一面側に固定された半導体素子
（２）と、ヒートシンクの他面側を露出させつつヒート
シンク及び半導体素子を包み込むように封止する封止用
樹脂（６）とを備える樹脂封止型半導体装置において、
ヒートシンクには、封止用樹脂に発生する応力を逃がす
ために変形可能な逃がし部（７）が形成されていること
を特徴とする。In order to achieve the above object, in the invention described in claim 1, the heat sink (1)
And a semiconductor element (2) fixed to one surface side of the heat sink, and a sealing resin (6) for sealing the heat sink and the semiconductor element so as to wrap around while exposing the other surface side of the heat sink. In static semiconductor devices,
The heat sink is characterized in that a deformable escape portion (7) is formed to escape the stress generated in the sealing resin.
【０００７】それによれば、ヒートシンクと封止用樹脂
との間の線膨張係数の差により封止用樹脂に過大な応力
が発生しても、その応力を受けてヒートシンクの逃がし
部が変形して、応力を緩和する。そのため、封止用樹脂
にクラックが発生するのを抑制することができる。According to this, even if an excessive stress is generated in the sealing resin due to a difference in linear expansion coefficient between the heat sink and the sealing resin, the relief portion of the heat sink is deformed under the stress. , Relieve stress. Therefore, it is possible to suppress the occurrence of cracks in the sealing resin.
【０００８】ここで、請求項２に記載の発明のように、
逃がし部（７）としては、ヒートシンク（１）に形成さ
れた凹部（７ａ）により構成されているものにすること
ができる。Here, as in the invention described in claim 2,
The escape portion (7) may be formed of a recess (7a) formed in the heat sink (1).
【０００９】ところで、上記図８に示す様に、ヒートシ
ンク１においては、通常、半導体チップ２が固定される
側の一面１ａと露出面である他面１ｂとの間の側面１ｃ
に、突起部１ｄを有し、この突起部１ｄを封止用樹脂６
に食い込ませた形とすることで、ヒートシンク１と封止
用樹脂６との密着性を向上させている。By the way, as shown in FIG. 8, in the heat sink 1, a side surface 1c between the one surface 1a on which the semiconductor chip 2 is fixed and the other surface 1b which is an exposed surface is usually provided.
Has a projecting portion 1d, and the projecting portion 1d is sealed with the sealing resin 6
Adhesion between the heat sink 1 and the encapsulating resin 6 is improved by making it into the shape.
【００１０】このようなヒートシンク１は、図９（ａ）
に示す様に、金属板材をプレス加工して断面矩形のヒー
トシンク素材１ｅを形成した後、この素材１ｅの他面１
ｂ側から、型Ｋ１を用いてプレスを行い、ヒートシンク
素材１ｅの端部を変形させることにより、図９（ｂ）に
示す様に、突起部１ｄが形成された形状として作ること
ができる。Such a heat sink 1 is shown in FIG.
As shown in Fig. 1, after pressing a metal plate material to form a heat sink material 1e having a rectangular cross section, the other surface 1 of this material 1e is formed.
By pressing from the side b using the mold K1 and deforming the end portion of the heat sink material 1e, as shown in FIG. 9 (b), it is possible to form the projection 1d.
【００１１】そして、本発明者等の検討によれば、上記
図８に示す様に、上記した封止用樹脂に発生するクラッ
ク１００は、特にヒートシンク１における突起部１ｄの
先端角部Ｂから他面１ｂ側に渡って、発生しやすいこと
がわかった。According to a study made by the present inventors, as shown in FIG. 8, the crack 100 generated in the above-mentioned sealing resin is particularly likely to occur from the tip corner portion B of the protrusion 1d of the heat sink 1 to the other portion. It was found that it is likely to occur over the surface 1b side.
【００１２】これは、ヒートシンク１の一面１ａ側は、
半導体チップ２やワイヤ５を覆うため、封止用樹脂６の
厚さが十分確保されるのに対し、他面１ｂ側は比較的封
止用樹脂６の厚さが薄く、そのため、クラック１００が
封止用樹脂６の表面にまで延びやすいことによる。This is because the one surface 1a side of the heat sink 1 is
The thickness of the sealing resin 6 is sufficiently secured to cover the semiconductor chip 2 and the wires 5, while the thickness of the sealing resin 6 is relatively thin on the other surface 1b side, so that the crack 100 is generated. This is because the resin easily extends to the surface of the sealing resin 6.
【００１３】そこで、単純には、ヒートシンク１におけ
る突起部１ｄよりも他面１ｂ側において封止用樹脂６の
厚さを確保すれば、突起部１ｄの先端角部Ｂに発生する
クラック１００が封止用樹脂６の表面にまで延びること
を防止することができ、クラック防止に効果的であると
考えられる。Therefore, simply by ensuring the thickness of the sealing resin 6 on the other surface 1b side of the protrusion 1d in the heat sink 1, the crack 100 generated at the tip corner B of the protrusion 1d is sealed. It is considered that it is possible to prevent the resin for stopping 6 from extending to the surface, and it is effective for preventing cracks.
【００１４】しかし、そのためには、上記図８に示す様
な、ヒートシンク１における突起部１ａから他面１ｂ側
に渡る部分の厚さｔを大きくする必要がある。ところ
が、上述したようなプレス加工では、当該厚さｔを大き
くした分、プレスによる横方向へのはみ出し、すなわ
ち、突起部１ｄの突出度合（図８中の突出長さＬ）も大
きくなる。However, for that purpose, it is necessary to increase the thickness t of the portion of the heat sink 1 extending from the protrusion 1a to the other surface 1b as shown in FIG. However, in the pressing process as described above, as the thickness t is increased, the lateral protrusion by the press, that is, the protrusion degree of the protrusion 1d (the protrusion length L in FIG. 8) also increases.
【００１５】すると、突起部１ｄの先端と封止用樹脂６
の表面との距離が短くなり、クラックが表出しやすくな
ってしまう。そこで、上記プレス加工によって、なるべ
く突出部１ｄの突出長さＬを大きくすることなく、上記
厚さｔを大きくすることが好ましい。Then, the tip of the protrusion 1d and the sealing resin 6
The distance from the surface of the will become shorter and cracks will be more likely to appear. Therefore, it is preferable to increase the thickness t by the press working without increasing the protrusion length L of the protrusion 1d as much as possible.
【００１６】請求項３に記載の発明は、この点に鑑み
て、ヒートシンクの突出部形状に工夫を施したものであ
り、ヒートシンク（１）と、このヒートシンクの一面側
に固定された半導体素子（２）と、ヒートシンクの他面
側を露出させつつヒートシンク及び半導体素子を包み込
むように封止する封止用樹脂（６）とを備える樹脂封止
型半導体装置において、ヒートシンク（１）は、一面と
他面との間の側面（１ｃ）に突起部（１ｄ）を有するも
のであり、ヒートシンクにおいて、側面のうち突起部よ
りも他面側の側面と突起部とのなす角度（θ）が９０°
よりも大きいことを特徴とする。In view of this point, the invention according to claim 3 is a device in which the shape of the protruding portion of the heat sink is devised, and the heat sink (1) and the semiconductor element fixed to one surface side of the heat sink ( 2) and a sealing resin (6) that seals the heat sink and the semiconductor element so as to wrap the heat sink while exposing the other surface side of the heat sink, the heat sink (1) has one surface. The protrusion (1d) is provided on the side surface (1c) between the other surface, and the angle (θ) between the side surface of the side surface on the other surface side of the projection and the projection portion is 90 ° in the heat sink.
It is characterized by being larger than.
【００１７】それによれば、従来は、ヒートシンクにお
いて、側面のうち突起部よりも他面側の側面と突起部と
のなす角度（θ）が９０°であったのに対し（図８参
照）、本発明では、当該角度（θ）を９０°よりも大と
しているため、上記したプレス加工により、上記厚さｔ
を大きくしても、従来に比べて、突出部の突出長さが大
きくならない。According to this, in the prior art, in the heat sink, the angle (θ) formed by the side surface of the side surface on the other side of the projection side and the projection side was 90 ° (see FIG. 8). In the present invention, since the angle (θ) is set to be larger than 90 °, the thickness t can be obtained by the press working described above.
Even if is increased, the projecting length of the projecting portion does not become larger than in the conventional case.
【００１８】そのため、ヒートシンクにおける突起部よ
りも他面側において封止用樹脂の厚さを確保すること
を、適切に実現することができ、クラックが封止用樹脂
の表面にまで延びることを防止することができる。よっ
て、ヒートシンクと封止用樹脂との線膨張係数の差によ
り生じる応力によって封止用樹脂にクラックが発生する
のを抑制することができる。Therefore, the thickness of the sealing resin can be properly ensured on the other surface side of the protrusion of the heat sink, and cracks can be prevented from extending to the surface of the sealing resin. can do. Therefore, it is possible to suppress the occurrence of cracks in the sealing resin due to the stress generated by the difference in linear expansion coefficient between the heat sink and the sealing resin.
【００１９】なお、上記各手段の括弧内の符号は、後述
する実施形態に記載の具体的手段との対応関係を示す一
例である。The reference numerals in parentheses for each means described above are examples showing the correspondence with specific means described in the embodiments described later.
【００２０】[0020]
【発明の実施の形態】（第１実施形態）以下、本発明を
図に示す実施形態について説明する。図１は、本発明の
第１実施形態に係る樹脂封止型半導体装置Ｓ１の概略断
面図である。また、図２は、樹脂封止型半導体装置Ｓ１
におけるヒートシンク１を図１中の下方、すなわちヒー
トシンク１の他面１ｂ側から見た平面図である。BEST MODE FOR CARRYING OUT THE INVENTION (First Embodiment) The present invention will be described below with reference to the embodiments shown in the drawings. FIG. 1 is a schematic sectional view of a resin-sealed semiconductor device S1 according to the first embodiment of the present invention. 2 shows a resin-sealed semiconductor device S1.
FIG. 2 is a plan view of the heat sink 1 in FIG. 1 viewed from the lower side, that is, from the other surface 1b side of the heat sink 1.
【００２１】図１において、１は、銅等の熱伝導性に優
れた金属等よりなる板状のヒートシンクである。ヒート
シンク１の一面１ａには、半導体チップ（半導体素子）
２が、接着剤や半田等の接続部材３を介して固定されて
いる。半導体チップ２は、銅等よりなるリード４に、金
（Ａｕ）やアルミ（Ａｌ）等よりなるボンディングワイ
ヤ５を介して電気的に接続されている。In FIG. 1, reference numeral 1 is a plate-shaped heat sink made of a metal such as copper having a high thermal conductivity. A semiconductor chip (semiconductor element) is provided on one surface 1a of the heat sink 1.
2 are fixed via a connecting member 3 such as an adhesive or solder. The semiconductor chip 2 is electrically connected to a lead 4 made of copper or the like via a bonding wire 5 made of gold (Au) or aluminum (Al).
【００２２】そして、ヒートシンク１の他面１ｂ側を露
出させつつヒートシンク１及び半導体チップ２、ワイヤ
５、及びワイヤ５に接続されたリード４の一部（インナ
ーリード）が、エポキシ樹脂等よりなる封止用樹脂６に
よって包み込むように封止されている。Then, while exposing the other surface 1b side of the heat sink 1, a part (inner lead) of the heat sink 1 and the semiconductor chip 2, the wire 5, and the lead 4 connected to the wire 5 is made of an epoxy resin or the like. It is sealed so as to be wrapped with the stopping resin 6.
【００２３】また、ヒートシンク１においては、図１に
示す様に、半導体チップ２が固定されている側の一面１
ａと封止用樹脂６からの露出面である他面１ｂとの間の
側面１ｃに、突起部（コイニング）１ｄが形成されてお
り、この突起部１ｄが封止用樹脂６に食い込んだ形とな
っている。そのため、ヒートシンク１と封止用樹脂６と
の密着性を向上させている。Further, in the heat sink 1, as shown in FIG. 1, one surface 1 on the side where the semiconductor chip 2 is fixed.
A protruding portion (coining) 1d is formed on the side surface 1c between the a and the other surface 1b which is the exposed surface from the sealing resin 6, and the protruding portion 1d cuts into the sealing resin 6. Has become. Therefore, the adhesion between the heat sink 1 and the sealing resin 6 is improved.
【００２４】そして、ヒートシンク１には、封止用樹脂
６に発生する応力を逃がすために変形可能な逃がし部７
が形成されている。本実施形態では、逃がし部７は、ヒ
ートシンク１に形成された凹部７ａにより構成されてい
る。The heat sink 1 has a relief portion 7 which can be deformed in order to release the stress generated in the sealing resin 6.
Are formed. In the present embodiment, the escape portion 7 is composed of a recess 7 a formed in the heat sink 1.
【００２５】図１および図２では、逃がし部７は、ヒー
トシンク１の他面１ｂに形成された環状の凹部７ａによ
り構成され、ヒートシンク１における凹部７ａを形成し
た部分の厚さが他の部位に比べて薄くなっている。その
ため、ヒートシンク１における凹部７ａの外周側の部分
が、封止用樹脂６に発生する応力により例えば凹部７ａ
の内周側へ変形可能となっている。In FIGS. 1 and 2, the relief portion 7 is composed of an annular recess 7a formed on the other surface 1b of the heat sink 1, and the thickness of the portion of the heat sink 1 where the recess 7a is formed is different from that of the other portion. It is thinner than that. Therefore, the portion of the heat sink 1 on the outer peripheral side of the recess 7a is, for example, recessed 7a due to the stress generated in the sealing resin 6.
It can be deformed to the inner circumference side.
【００２６】なお、逃がし部７は、例えば、図３に断面
図として示す様に、突起部１ｄの一部に凹部７ａを形成
して、突起部１ｄを変形しやすい形状としても良いし、
また、図４に平面図（ヒートシンク１の他面１ｂ側から
見た平面図）として示す様に、ヒートシンク１の他面１
ｂに十字形状の凹部７ａを形成することにより構成され
たものとしても良い。It should be noted that the relief portion 7 may have a shape in which the recess portion 7a is formed in a part of the projection portion 1d so that the projection portion 1d can be easily deformed, as shown in a sectional view in FIG.
In addition, as shown in a plan view (a plan view from the other surface 1b side of the heat sink 1) in FIG.
It may be configured by forming a cross-shaped recess 7a in b.
【００２７】このようなヒートシンク１は、次のように
して作製することができる。図５は、ヒートシンク１の
作製方法を説明するための説明図であり、断面図として
示してある。The heat sink 1 as described above can be manufactured as follows. FIG. 5 is an explanatory diagram for explaining a method of manufacturing the heat sink 1, and is shown as a cross-sectional view.
【００２８】図５（ａ）に示す様に、金属板材をプレス
加工して断面矩形のヒートシンク素材１ｅを形成した
後、この素材１ｅの他面１ｂ側から、突起部１ｄに対応
した形状を有する型Ｋ１を用いてプレスを行い、ヒート
シンク素材１ｅの端部を変形させることにより、図５
（ｂ）に示す様に、突起部１ｄを形成する。As shown in FIG. 5 (a), after a metal plate material is pressed to form a heat sink material 1e having a rectangular cross section, the heat sink material 1e has a shape corresponding to the protruding portion 1d from the other surface 1b side of the material 1e. By pressing using the mold K1 to deform the end portion of the heat sink material 1e, as shown in FIG.
As shown in (b), the protrusion 1d is formed.
【００２９】次に、図５（ｃ）に示す様に、凹部７ａに
対応した形状を有する型Ｋ２を用いて、ヒートシンク素
材１ｅの他面１ｂ側からプレスを行うことにより、逃が
し部７が形成されたヒートシンク１を作製することがで
きる。Next, as shown in FIG. 5 (c), the relief portion 7 is formed by pressing from the other surface 1b side of the heat sink material 1e using a mold K2 having a shape corresponding to the recess 7a. The heat sink 1 can be manufactured.
【００３０】そして、上記した樹脂封止型半導体装置Ｓ
１は、モールド用の成形型（図示せず）内に、ヒートシ
ンク１に半導体チップ２が固定され且つ半導体チップ２
とリード４とがワイヤ５にて接続されたワークを、配置
した後、上記成形型内に封止用樹脂６を注入し、硬化さ
せることで、製造することができる。この装置Ｓ１は、
ヒートシンク１の他面１ｂにて、半田や導電性接着剤等
を介して回路基板（図示せず）等へ実装される。ところ
で、例えば、ヒートシンク１として銅、封止用樹脂６と
してエポキシ樹脂を用いた場合、半導体チップ（シリコ
ン）２の線膨張係数は３ｐｐｍ／℃程度、封止用樹脂６
の線膨張係数は８ｐｐｍ／℃程度、ヒートシンク１の線
膨張係数は１７ｐｐｍ／℃程度である。Then, the resin-sealed semiconductor device S described above is used.
Reference numeral 1 denotes a semiconductor chip 2 in which a semiconductor chip 2 is fixed to a heat sink 1 in a molding die (not shown) for molding.
After arranging the work in which the lead 4 and the lead 4 are connected by the wire 5, the sealing resin 6 is injected into the molding die and hardened, whereby the work can be manufactured. This device S1
The other surface 1b of the heat sink 1 is mounted on a circuit board (not shown) or the like via solder, a conductive adhesive, or the like. By the way, for example, when copper is used as the heat sink 1 and epoxy resin is used as the sealing resin 6, the linear expansion coefficient of the semiconductor chip (silicon) 2 is about 3 ppm / ° C.
Has a linear expansion coefficient of about 8 ppm / ° C., and the heat sink 1 has a linear expansion coefficient of about 17 ppm / ° C.
【００３１】このようなヒートシンク１と封止用樹脂６
との間で、両者の線膨張係数の差により過大な応力が発
生し、その応力により、ヒートシンク１と封止用樹脂６
との間に剥離が生じる可能性がある。Such a heat sink 1 and a sealing resin 6
An excessive stress is generated between the heat sink 1 and the sealing resin 6 due to the difference in the coefficient of linear expansion between them.
There is a possibility that peeling will occur between and.
【００３２】本発明者等は、従来のヒートシンク１に対
して図６に示す様なモデルを考えて、封止用樹脂６の剥
離（図６中のハッチング部）が生じた場合における応力
解析を行った。図６において（ａ）は剥離がない場合、
（ｂ）はヒートシンク１の一面１ａにて剥離した場合、
（ｃ）は（ｂ）に加えて更にヒートシンク１の側面１ｃ
まで剥離した場合を示す。The inventors of the present invention consider a model as shown in FIG. 6 for the conventional heat sink 1 and perform stress analysis when peeling of the sealing resin 6 (hatched portion in FIG. 6) occurs. went. In FIG. 6, (a) shows that there is no peeling,
When (b) is peeled off on one surface 1a of the heat sink 1,
(C) is a side surface 1c of the heat sink 1 in addition to (b)
It shows the case of peeling up.
【００３３】解析の結果、ヒートシンク１の一面１ａと
側面１ｃとのなす角部Ａおよび突起部１ｄの先端角部Ｂ
の両角部Ａ、Ｂにおける応力は、（ａ）ではＡ＝９５．
４ＭＰａ、Ｂ＝６１．７ＭＰａであったのに対し、
（ｂ）では特に角部Ａにて３０２．２ＭＰａ、（ｃ）で
は特に角部Ｂにて２４５ＭＰａと大幅に応力が大きくな
った。このように、剥離によって過大な応力集中が発生
し、応力集中部位では、クラック等が発生する恐れがあ
る。As a result of the analysis, a corner portion A formed by the one surface 1a and the side surface 1c of the heat sink 1 and a tip corner portion B of the protrusion 1d.
The stress in both corners A and B of A is 95.
While 4 MPa and B = 61.7 MPa,
In (b), the stress was significantly large at 302.2 MPa particularly at the corner A, and at 245 MPa particularly at the corner B in (c). In this way, excessive stress concentration occurs due to peeling, and cracks or the like may occur at the stress concentration site.
【００３４】その点、本実施形態によれば、ヒートシン
ク１に上記逃がし部７が形成されているため、ヒートシ
ンク１と封止用樹脂６との間の線膨張係数の差により封
止用樹脂６に過大な応力が発生しても、その応力を受け
てヒートシンク１の逃がし部７が変形して、応力を緩和
する。そのため、封止用樹脂６に、図６に示す様な剥離
やクラック１００が発生するのを抑制することができ
る。In this respect, according to the present embodiment, since the escape portion 7 is formed on the heat sink 1, the sealing resin 6 is formed due to the difference in the linear expansion coefficient between the heat sink 1 and the sealing resin 6. Even if an excessive stress occurs, the relief portion 7 of the heat sink 1 is deformed under the stress, and the stress is relaxed. Therefore, it is possible to prevent peeling and cracks 100 as shown in FIG. 6 from occurring in the sealing resin 6.
【００３５】なお、本実施形態は、ヒートシンク１と、
このヒートシンク１の一面１ａ側に固定された半導体素
子２と、ヒートシンク１の他面１ｂ側を露出させつつヒ
ートシンク１及び半導体素子２を包み込むように封止す
る封止用樹脂６とを備える樹脂封止型半導体装置Ｓ１に
おいて、ヒートシンク１における封止用樹脂６と接する
接触面が、封止用樹脂６との密着性を高めるべく粗化処
理されていることを主たる特徴とするものであり、他の
部分は適宜設計変更しても良い。In this embodiment, the heat sink 1
A resin encapsulation including a semiconductor element 2 fixed to one surface 1a side of the heat sink 1 and a sealing resin 6 for encapsulating the heat sink 1 and the semiconductor element 2 so as to cover the other surface 1b side of the heat sink 1. The main feature of the static semiconductor device S1 is that the contact surface of the heat sink 1 that is in contact with the sealing resin 6 is roughened to enhance the adhesion to the sealing resin 6. The design of the part may be changed appropriately.
【００３６】（第２実施形態）図７は、本発明の第２実
施形態に係る樹脂封止型半導体装置Ｓ１の概略断面図で
ある。本実施形態は、ヒートシンク１において、側面１
ｃのうち突起部１ｄよりも他面１ｂ側の側面１ｃと突起
部１ｄとのなす角度θを９０°よりも大きくしたもので
ある。(Second Embodiment) FIG. 7 is a schematic sectional view of a resin-sealed semiconductor device S1 according to a second embodiment of the present invention. In this embodiment, in the heat sink 1, the side surface 1
In c, the angle θ formed by the side surface 1c on the other surface 1b side of the protrusion 1d and the protrusion 1d is larger than 90 °.
【００３７】上述したように、封止用樹脂に発生するク
ラック１００は、特にヒートシンク１における突起部１
ｄの先端角部Ｂにて発生しやすく（上記図８参照）、ま
た、上記図６に示したように、ヒートシンク１と封止用
樹脂６との剥離により更に突起部１ｄの先端角部Ｂにお
ける応力が大きくなり、当該先端角部Ｂからクラックが
発生しやすくなる。従って、当該先端角部Ｂから発生す
るクラックを抑制することが効果的と考えられる。As described above, the cracks 100 generated in the sealing resin are particularly caused by the protrusions 1 on the heat sink 1.
It is likely to occur at the tip corner portion B of d (see FIG. 8 above), and as shown in FIG. 6, the tip corner portion B of the protrusion 1d is further caused by peeling of the heat sink 1 and the sealing resin 6. In this case, the stress is increased and cracks are easily generated from the tip corner portion B. Therefore, it is considered effective to suppress the cracks generated from the tip corner portion B.
【００３８】従来は、上記図８に示したように、ヒート
シンク１において、側面１ｃのうち突起部１ｄよりも他
面１ｂ側の側面１ｃと突起部１ｄとのなす角度θが９０
°であったのに対し、本実施形態では、当該角度θを９
０°よりも大としているため、上記したプレス加工によ
り、上記厚さｔを大きくしても、従来に比べて、突出部
１ｄの突出長さＬを小さくすることができる。Conventionally, as shown in FIG. 8, in the heat sink 1, the angle θ formed by the side surface 1c of the side surface 1c on the other surface 1b side of the protruding portion 1d and the protruding portion 1d is 90.
However, in the present embodiment, the angle θ is 9
Since it is set to be larger than 0 °, even if the thickness t is increased by the press working described above, the protruding length L of the protruding portion 1d can be made smaller than in the conventional case.
【００３９】それによって、上記厚さｔを適切に大きく
することができるため、ヒートシンク１における突起部
１ｄよりも他面１ｂ側において封止用樹脂６の厚さを確
保することを、適切に実現することができ、クラックが
封止用樹脂の表面にまで延びることを防止することがで
きる。よって、ヒートシンク１と封止用樹脂６との線膨
張係数の差により生じる応力によって封止用樹脂６にク
ラックが発生するのを抑制することができる。As a result, the thickness t can be appropriately increased, so that the thickness of the sealing resin 6 can be properly ensured on the other surface 1b side of the protrusion 1d of the heat sink 1. It is possible to prevent the crack from extending to the surface of the sealing resin. Therefore, it is possible to suppress the occurrence of cracks in the sealing resin 6 due to the stress generated by the difference in linear expansion coefficient between the heat sink 1 and the sealing resin 6.
【図１】本発明の第１実施形態に係る樹脂封止型半導体
装置の概略断面図である。FIG. 1 is a schematic cross-sectional view of a resin-sealed semiconductor device according to a first embodiment of the present invention.
【図２】図１におけるヒートシンクを図１中の下方から
見た平面図である。FIG. 2 is a plan view of the heat sink in FIG. 1 seen from below in FIG.
【図３】上記第１実施形態における逃し部の他の例を示
す断面図である。FIG. 3 is a cross-sectional view showing another example of a relief portion in the first embodiment.
【図４】上記第１実施形態における逃し部の他の例を示
す平面図である。FIG. 4 is a plan view showing another example of a relief portion in the first embodiment.
【図５】図１におけるヒートシンクの製造方法を示す説
明図である。5 is an explanatory diagram showing a method of manufacturing the heat sink in FIG. 1. FIG.
【図６】封止用樹脂の応力解析のためのモデルを示す図
である。FIG. 6 is a diagram showing a model for stress analysis of a sealing resin.
【図７】本発明の第２実施形態に係る樹脂封止型半導体
装置の概略断面図である。FIG. 7 is a schematic sectional view of a resin-sealed semiconductor device according to a second embodiment of the present invention.
【図８】従来の半導体装置の一般的な断面構成図であ
る。FIG. 8 is a general cross-sectional configuration diagram of a conventional semiconductor device.
【図９】従来の半導体装置におけるヒートシンクの製造
方法を示す図である。FIG. 9 is a diagram showing a method of manufacturing a heat sink in a conventional semiconductor device.
１…ヒートシンク、１ｃ…ヒートシンクの側面、１ｄ…
ヒートシンクの突起部、２…半導体チップ（半導体素
子）、６…封止用樹脂、７…逃がし部、７ａ…凹部。1 ... Heat sink, 1c ... Side of heat sink, 1d ...
Heat sink projections, 2 ... Semiconductor chips (semiconductor elements), 6 ... Sealing resin, 7 ... Relief, 7a ... Recesses.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 水野 直仁 愛知県刈谷市昭和町１丁目１番地 株式会 社デンソー内 Ｆターム(参考） 4M109 AA01 BA01 BA03 CA21 DB03 FA04 5F036 AA01 BB01 BE01 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Naohito Mizuno 1-1, Showa-cho, Kariya city, Aichi stock market Inside the company DENSO F-term (reference) 4M109 AA01 BA01 BA03 CA21 DB03 FA04 5F036 AA01 BB01 BE01
Claims (3)
クの一面側に固定された半導体素子（２）と、前記ヒー
トシンクの他面側を露出させつつ前記ヒートシンク及び
前記半導体素子を包み込むように封止する封止用樹脂
（６）とを備える樹脂封止型半導体装置において、 前記ヒートシンクには、前記封止用樹脂に発生する応力
を逃がすために変形可能な逃がし部（７）が形成されて
いることを特徴とする樹脂封止型半導体装置。1. A heat sink (1), a semiconductor element (2) fixed to one surface side of the heat sink, and another surface side of the heat sink exposed while sealing so as to wrap the heat sink and the semiconductor element. In a resin-sealed semiconductor device including a sealing resin (6), the heat sink is provided with a deformable escape portion (7) for releasing a stress generated in the sealing resin. A resin-encapsulated semiconductor device comprising:
ク（１）に形成された凹部（７ａ）により構成されてい
るものであることを特徴とする請求項１に記載の樹脂封
止型半導体装置。2. The resin-sealed semiconductor according to claim 1, wherein the escape portion (7) is formed by a recess (7a) formed in the heat sink (1). apparatus.
クの一面側に固定された半導体素子（２）と、前記ヒー
トシンクの他面側を露出させつつ前記ヒートシンク及び
前記半導体素子を包み込むように封止する封止用樹脂
（６）とを備える樹脂封止型半導体装置において、 前記ヒートシンク（１）は、前記一面と前記他面との間
の側面（１ｃ）に、突起部（１ｄ）を有するものであ
り、 前記ヒートシンクにおいて、前記側面のうち前記突起部
よりも前記他面側の側面と前記突起部とのなす角度
（θ）が、９０°よりも大きいことを特徴とする樹脂封
止型半導体装置。3. A heat sink (1), a semiconductor element (2) fixed to one surface side of the heat sink, and another surface side of the heat sink exposed while sealing so as to wrap the heat sink and the semiconductor element. In a resin-sealed semiconductor device including a sealing resin (6), the heat sink (1) has a protrusion (1d) on a side surface (1c) between the one surface and the other surface. In the heat sink, an angle (θ) formed by the side surface of the side surface closer to the other surface than the protruding portion and the protruding portion is larger than 90 °. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001195328A JP2003007933A (en) | 2001-06-27 | 2001-06-27 | Resin-sealing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001195328A JP2003007933A (en) | 2001-06-27 | 2001-06-27 | Resin-sealing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2003007933A true JP2003007933A (en) | 2003-01-10 |
Family
ID=19033321
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001195328A Withdrawn JP2003007933A (en) | 2001-06-27 | 2001-06-27 | Resin-sealing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003007933A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6903457B2 (en) * | 2002-11-13 | 2005-06-07 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device |
| DE102008061636A1 (en) | 2007-12-14 | 2009-06-18 | Denso Corp., Kariya-shi | Semiconductor device and method for its production |
| JP2011181824A (en) * | 2010-03-03 | 2011-09-15 | Hitachi Automotive Systems Ltd | Power semiconductor device and ac power generator for vehicle |
| CN104064559A (en) * | 2013-03-22 | 2014-09-24 | 株式会社东芝 | Semiconductor device |
| JP2015115510A (en) * | 2013-12-13 | 2015-06-22 | トヨタ自動車株式会社 | Semiconductor module |
-
2001
- 2001-06-27 JP JP2001195328A patent/JP2003007933A/en not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6903457B2 (en) * | 2002-11-13 | 2005-06-07 | Mitsubishi Denki Kabushiki Kaisha | Power semiconductor device |
| DE102008061636A1 (en) | 2007-12-14 | 2009-06-18 | Denso Corp., Kariya-shi | Semiconductor device and method for its production |
| US8207607B2 (en) | 2007-12-14 | 2012-06-26 | Denso Corporation | Semiconductor device with resin mold |
| US8749055B2 (en) | 2007-12-14 | 2014-06-10 | Denso Corporation | Semiconductor device with resin mold |
| US9087924B2 (en) | 2007-12-14 | 2015-07-21 | Denso Corporation | Semiconductor device with resin mold |
| DE102008061636B4 (en) | 2007-12-14 | 2020-06-25 | Denso Corporation | Semiconductor device and method for its production |
| JP2011181824A (en) * | 2010-03-03 | 2011-09-15 | Hitachi Automotive Systems Ltd | Power semiconductor device and ac power generator for vehicle |
| CN104064559A (en) * | 2013-03-22 | 2014-09-24 | 株式会社东芝 | Semiconductor device |
| JP2015115510A (en) * | 2013-12-13 | 2015-06-22 | トヨタ自動車株式会社 | Semiconductor module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7582958B2 (en) | Semiconductor package | |
| US20240096759A1 (en) | Smds integration on qfn by 3d stacked solution | |
| JP2004500718A (en) | Leadless semiconductor product packaging apparatus with optional window lid and method of assembling the same | |
| JP2000307045A (en) | Lead frame and manufacture of resin sealed semiconductor device using it | |
| JP2001015668A (en) | Resin-sealed semiconductor package | |
| TWI431728B (en) | Semiconductor package with reinforced base | |
| JP4489791B2 (en) | QFN package | |
| JP2003007933A (en) | Resin-sealing semiconductor device | |
| US20010040300A1 (en) | Semiconductor package with heat dissipation opening | |
| JPH0774287A (en) | Semiconductor device with heat sink and manufacture of heat sink | |
| JP2002368165A (en) | Resin-sealed semiconductor device | |
| JP2004273946A (en) | Semiconductor device | |
| JP2006049694A (en) | Dual gauge lead frame | |
| US6312976B1 (en) | Method for manufacturing leadless semiconductor chip package | |
| JP2006222259A (en) | Semiconductor device and manufacturing method thereof | |
| JP2001267484A (en) | Semiconductor device and manufacturing method thereof | |
| JP2005311099A (en) | Semiconductor device and its manufacturing method | |
| JP2010118712A (en) | Method of manufacturing qfn package | |
| JPS63107152A (en) | Resin packaged type electronic paris | |
| JPH0758273A (en) | Lead frame and semiconductor device using same | |
| JPS6223096Y2 (en) | ||
| JP2003068976A (en) | Resin-sealed power semiconductor device | |
| JPH0637221A (en) | Resin sealing type semiconductor device | |
| TW495941B (en) | Method for packaging BGA for a voiding molding flash | |
| JP2771475B2 (en) | Semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070709 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090727 |