JP2000307045A - Lead frame and manufacture of resin sealed semiconductor device using it - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent generation of resin bur in a land electrode by providing a step part between the forward end of a land lead part and the end connected with a frame by means of a semi-cut press part thereby preventing sealing resin from flowing into the gap between a sealing sheet and the bottom face of the land electrode. SOLUTION: When a pressing force is applied to the frame side at the land lead 4 of a lead frame, bottom face of the land electrode 19 at the land lead 4 is located lower than the bottom face on the other end side because of a step part provided by a semi-cut press part at the land lead 4. Consequently, the regions of a semiconductor element 15, a die pad part 1 and a metal thin wire 17 can be resin sealed 18 on the upper surface side of the lead frame under a state where the bottom face of the land electrode 19 is surely brought into tight contact with a sealing sheet. Consequently, the sealing resin 18 can be prevented from flowing between the sealing sheet and the land electrode 19 and the occurrence of bur from the land electrode 19 can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame having a lead having land electrodes serving as external terminals in addition to a conventional lead frame having a beam-shaped lead. The present invention relates to a method for manufacturing a resin-encapsulated semiconductor device in which an element is mounted and an upper surface is substantially sealed with a sealing resin as an outer periphery.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, high-density mounting of semiconductor components such as resin-encapsulated semiconductor devices has been required.
Thinning is progressing. In addition, the number of pins has been increased while being small and thin, and a high-density small and thin resin-sealed semiconductor device has been demanded.

Hereinafter, a lead frame used in a conventional resin-encapsulated semiconductor device will be described.

FIG. 36 is a plan view showing the structure of a conventional lead frame. As shown in FIG. 36, a conventional lead frame includes a frame 101 and its frame 10.
1, a rectangular die pad portion 102 on which a semiconductor element is mounted, a suspension lead portion 103 supporting the die pad portion 102, and when a semiconductor element is mounted, the mounted semiconductor element and a thin metal wire or the like. A beam-shaped inner lead portion 104 electrically connected by the connecting means, an outer lead portion 105 provided continuously with the inner lead portion 104 for connection to an external terminal, and an outer lead portion 1
The tie bars 105 are connected and fixed to each other, and the tie bar portions 106 serve as resin stoppers during resin sealing.

[0005] The lead frame has not one pattern having the structure shown in FIG.
They are arranged vertically continuously.

Next, a conventional resin-encapsulated semiconductor device will be described. FIG. 37 is a sectional view showing a resin-sealed semiconductor device using the lead frame shown in FIG.

As shown in FIG. 37, a semiconductor element 107 is mounted on a die pad section 102 of a lead frame, and the semiconductor element 107 and the inner lead section 104 are electrically connected by a thin metal wire 108. The outer periphery of the semiconductor element 107 and the inner lead part 104 on the die pad part 102 is sealed with a sealing resin 109. From the side of the sealing resin 109, the outer lead portion 10
5 is provided so as to protrude, and the tip is bent.

In a conventional method of manufacturing a resin-encapsulated semiconductor device, as shown in FIG. 38, a semiconductor element 107 is bonded onto a die pad portion 102 of a lead frame by an adhesive (die bonding step), The distal end portion of the inner lead portion 104 is connected by a thin metal wire 108 (wire bonding step). After that, the semiconductor element 107
Is sealed, the sealing region is sealed with a sealing resin 109 in the region surrounded by the tie bar portion 106 of the lead frame, and the outer lead portion 105 is sealed by protruding outside (resin). Sealing step). Then, the boundary portion of the sealing resin 109 is cut by the tie bar portion 106, each outer lead portion 105 is separated, the frame 101 is removed, and the tip of the outer lead portion 105 is bent (tie bar cut / bend). Process),
A resin-sealed semiconductor device having the structure shown in FIG. 37 can be manufactured. Here, in FIG. 38, a region indicated by a broken line is a region to be sealed with the sealing resin 109.

[0009]

However, in the conventional lead frame, when the semiconductor element is highly integrated and the number of pins is increased, there is a limit in forming the width of the inner lead portion (outer lead portion). In order to cope with the problem, the number of inner lead portions (outer lead portions) increases, so that the lead frame itself becomes large, and as a result, the resin-encapsulated semiconductor device also becomes large. There is a problem that a fixed semiconductor device cannot be realized. In addition, when increasing the number of inner leads without changing the size of the lead frame in order to support multiple pins of the semiconductor element, the width of each inner lead must be reduced, and etching of the lead frame may be performed. There are many problems in processing.

Recently, as a semiconductor device of a surface mounting type, a semiconductor element is mounted on a carrier (wiring board) having an external electrode (ball electrode, land electrode) provided on the bottom surface, and after electrical connection is made, the semiconductor element is mounted. Ball grid array (BGA), which is a semiconductor device in which the upper surface of the carrier is resin-sealed
And a land grid array (LGA) type semiconductor device. This type of semiconductor device is a semiconductor device mounted on a motherboard on the bottom side, and such a surface mount type semiconductor device is becoming mainstream in the future. Therefore, in order to cope with such a trend, a big problem that a conventional lead frame and a resin-sealed semiconductor device using the lead frame cannot be dealt with has become apparent.

In a conventional resin-encapsulated semiconductor device, an external lead composed of an outer lead portion is provided to protrude from a side surface of a sealing resin, and the external lead and a substrate electrode are bonded and mounted. Therefore, BGA type, LGA
The reliability of board mounting is lower than that of a semiconductor device of the type. In addition, since BGA type and LGA type semiconductor devices use a wiring board, there is a problem that the cost is high.

The present invention provides a resin-encapsulated semiconductor device using a frame-type package material which can cope with the above-mentioned conventional problems and future trends in semiconductor devices. Using a frame body. In addition to the conventional lead frame concept, in addition to beam-shaped leads, lead frames and resin-encapsulated semiconductors that focus on forming lands that serve as external electrodes in a frame shape It is intended to provide a method of manufacturing the device.

[0013]

In order to solve the above-mentioned conventional problems, a lead frame according to the present invention is provided with a frame main body made of a metal plate, and is disposed in an area of the frame main body, and has a protrusion on a surface. A die pad portion for mounting a semiconductor element having a, a leading end portion supporting the die pad portion, a suspending lead portion connected to a frame at the other end portion, and a bonding pad portion to which a fine metal wire is connected to the tip end surface. The other end is connected to the frame, the bottom portion is a lead portion serving as a land electrode, and the tip portion of the lead portion is closer to the die pad portion than the tip portion of the lead portion. Extending and arranged, the other end is connected to the frame,
Part of the bottom surface is a land lead portion serving as a land electrode, and the land lead portion has a stepped portion formed by a semi-cut press portion in a region between the front end portion and the end portion connected to the frame. The position of the land electrode bottom surface of the land lead portion due to the step portion is a lead frame located below the position of the lead bottom surface on the terminal side.

More specifically, the step in the region between the tip of the land lead and the end connected to the frame is a lead frame formed by a half-cut press.

The die pad is a lead frame having an annular groove surrounding the protruding portion on the surface.

The die pad is a lead frame having an annular groove on the bottom surface.

Further, the lead portion is a lead frame having a bonding pad portion on a surface of a tip portion thereof and a groove portion near the bonding pad.

Further, at least the land electrode of the lead portion and the land electrode of the land lead portion are a lead frame arranged in a staggered two rows in a planar arrangement.

According to the method of manufacturing a resin-encapsulated semiconductor device of the present invention, there is provided a die pad portion for mounting a semiconductor element having a protruding portion on the surface, a die pad portion supported at a front end portion, and a frame frame at the other end portion. A connected suspension lead portion, and a bonding pad portion to which a thin metal wire is connected on the front end surface, a bottom surface serving as a land electrode, and a second end portion connected to the frame, and a front end portion of the lead portion. A land lead portion in which a tip portion is arranged to extend toward the die pad portion side than the tip portion of the lead portion in the region, the other end portion is connected to the frame, and a part of the bottom surface is a land electrode The land lead portion has a step portion in a region between a tip end portion and a terminal end portion connected to the frame, and the land portion has a position on the land electrode bottom surface of the land lead portion. Is the end Preparing a lead frame located below the position of the lead bottom on the side of the unit, mounting a semiconductor element on the protrusion of the die pad part of the prepared lead frame, and mounting the semiconductor element on the die pad part Electrically connecting the electrode pads on the main surface of the semiconductor element to the land lead portions of the lead frame and the upper surfaces of the lead portions by thin metal wires, and at least a die pad portion on the back surface side of the lead frame. A step of bringing a sealing sheet into contact with each bottom surface of the land lead portion and the lead portion; and applying a pressing force to at least the land frame portion side of the land lead portion and the lead portion to form a bottom surface of the land lead portion. In a state where the land electrode and the land electrode on the bottom of the lead portion are pressed against and adhered to the sealing sheet, at least the bottom surface of the die pad portion, A step of resin-sealing the semiconductor element, the die pad portion, and the thin metal wire region as the upper surface side of the lead frame except for the land electrode on the bottom surface of the land lead portion and the land electrode portion on the bottom surface of the lead portion; Is removed from the lead frame, and the suspension lead portion of the lead frame, the land lead portion, and the portion of the lead portion connected to the frame,
Cutting the suspension lead portion, the land lead portion, and a cut surface of the lead portion so as to be arranged on substantially the same plane as a side surface of a package portion formed by resin sealing. It is a manufacturing method.

In the step of preparing a lead frame, a die pad portion for mounting a semiconductor element having a protruding portion on the surface, and a suspension lead supporting the die pad portion at the tip end and connecting to the frame at the other end portion. And a bonding pad portion to which a thin metal wire is connected on the surface of the tip portion, a bottom portion serving as a land electrode, and a lead portion having the other end portion connected to the frame, and a tip portion in the tip portion region of the lead portion. A portion is disposed so as to extend toward the die pad portion side from the tip portion of the lead portion, the other end portion is connected to the frame, and a part of the bottom surface is a land lead portion serving as a land electrode, The land lead portion has a step portion formed by a half-cut press portion in a region between the tip portion and a terminal portion connected to the frame, and the land portion is formed by the step portion formed by the half-cut press portion. Position of the land electrode bottom surface of the de part is a method for producing a resin-encapsulated semiconductor device is a step of preparing a lead frame is positioned below the position of the lead bottom surface of the distal end side.

More specifically, a pressing force is applied to a land lead portion of the lead frame and a portion of the lead portion on the frame side to seal the land electrode on the bottom surface of the land lead portion and the land electrode on the bottom surface of the lead portion. In a state where the semiconductor device is pressed against and adhered to the sheet, at least the bottom surface of the die pad portion, the land electrode on the bottom surface of the land lead portion, and the land electrode portion on the bottom surface of the lead portion, the semiconductor element, the die pad portion, the metal In the step of resin-sealing the thin wire region, when a pressing force is applied to a portion of the land lead portion on the frame side, the land lead portion is formed by a step formed by a semi-cut press portion provided in the land lead portion. Since the position of the bottom surface of the land electrode is located below the position of the bottom surface on the other end side, the bottom surface of the land electrode is securely sealed. Semiconductor device, the die pad as an upper surface side of the lead frame in close contact with the a method for manufacturing a resin-sealed semiconductor device regions of the metal thin wires are resin sealed.

In the step of bringing the sealing sheet into contact with at least the bottom surfaces of the die pad portion, the land lead portion, and the lead portion on the back side of the lead frame, the resin sealing using a sealing sheet having no adhesive is performed. This is a method for manufacturing a semiconductor device.

As described above, in the lead frame of the present invention, the semi-cut press portion is provided on the land lead portion having a long lead length. At the time of sealing, simply pressing the outer portion of the resin sealing line of the land lead portion against the sealing mold surface can securely bring the bottom surface of the land electrode of the land lead portion into close contact with the sealing sheet. Even if the applied sealing resin is injected, the sealing resin does not enter between the sealing sheet and the bottom surface of the land electrode of the land lead portion, so that generation of resin burrs on the land electrode can be prevented. Therefore,
When the lead length is long, that is, when the lead portion is pressed against the mold at the time of resin sealing, and the lead bottom length is such that the bottom surface of the lead cannot be securely adhered to the sealing sheet, the lead portion is partially cut as in the present invention. It is a very useful method to form a step by providing a press part, and it is possible to eliminate resin burrs on the bottom of the lead exposed from the sealing resin part (package part) as a product.

[0024]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A lead frame, a resin-sealed semiconductor device using the same and a method for manufacturing the same according to the present invention will be described below with reference to the drawings.

First, the lead frame of this embodiment will be described.

FIG. 1 is a plan view showing a lead frame of the present embodiment. FIG. 2 is an enlarged view showing a lead portion of the lead frame of the present embodiment, and FIG. 2 (a) is a plan view and FIG.
FIG. 3 is a cross-sectional view taken along A-A1 and B-B1 in FIG. In FIG. 1, a region indicated by a two-dot chain line indicates a sealing region when a semiconductor element is mounted using the lead frame of the present embodiment and sealed with a resin.

As shown in FIGS. 1 and 2, the lead frame of the present embodiment is made of a copper plate or a metal plate used for a normal lead frame such as a 42-alloy. A semiconductor device is mounted at a substantially central portion, a die pad 1 having a smaller area than the semiconductor device, a suspension lead connected to the frame 2 at the end, and a support for four corners of the die pad 1 at the tip. And a land lead portion 4 having a bent portion and a linear lead portion 5 having a distal end portion extending opposite to the die pad portion 1 and having a distal end portion connected to the frame 2. In the lead frame, the land lead portions 4 and 5 constitute external terminals (land portions) on the bottom surfaces thereof, respectively. Connection It is kill things.

More specifically, the die pad portion 1 is provided with a circular protruding portion 6 having a protruding amount of 70 [μm] at a substantially central portion of the surface thereof, and the protruding portion 6 constitutes the die pad portion 1. The flat plate is subjected to press in a half-cut state (a state in which punching by the press is stopped halfway) by press working, and is projected upward. The projecting portion 6 substantially serves as a portion for supporting the semiconductor element, and when the semiconductor element is mounted, a gap is formed between the surface of the die pad portion 1 excluding the projecting portion 6 and the back surface of the semiconductor element. ing. A groove 7 is provided in a region surrounding the protruding portion 6 on the surface of the die pad portion 1 so that a sealing resin enters the groove 7 when a semiconductor element is mounted and sealed with a resin. In this embodiment, the groove 7 has a circular annular groove 7.

Since the semiconductor element is mounted on the protruding portion 6 of the die pad portion 1 with an adhesive by the groove portion 7 and the sealing resin enters the groove portion 7 when resin sealing is performed, the die pad portion is subjected to stress due to thermal expansion. Even if resin peeling occurs between the surface of 1 and the sealing resin, the peeling itself can be trapped in the groove portion, thereby preventing the resin peeling and preventing a decrease in reliability. Of course, as the configuration of the groove 7, other than the annular configuration, a configuration in which the grooves are partially connected or a circular or rectangular shape that virtually forms an annular shape may be used. Alternatively, it may be one, but it can be set according to the size of the die pad portion 1 and the size of the semiconductor element to be mounted. Although not shown in the present embodiment, the protrusion 6 of the die pad portion 1 of the lead frame may be further provided with a step, and the step may be provided with an opening or a notch. When the semiconductor element is mounted on the die pad and electrically connected to the leads and the outer periphery is sealed with a resin, the sealing resin is filled into the die pad part through the opening provided, and the semiconductor element on the die pad part 1 Since the area of the back surface in contact with the sealing resin is also increased, the adhesion between the sealing resin and the semiconductor element is improved, and the reliability of the product can be improved.

The land lead portions 4 and the lead portions 5 of the lead frame according to the present embodiment are arranged alternately and in parallel when connected to the frame 2, but in the arrangement facing the die pad portion 1. The leading ends of the land lead portions 4 are routed around the leading end portions of the lead portions 5, and the leading end portions are arranged on the same straight line to form two rows. In this arrangement, when the semiconductor element is mounted and sealed with a resin, two rows of external terminals are arranged in a lattice on the bottom surface of the package. The bottom surface of the portion 5 is arranged on the package bottom surface. As shown in FIG. 2 in particular, the land lead portion 4 has a land portion 8 serving as an external terminal protruding downward at a bottom surface portion of the tip portion thereof. The thickness is reduced by processing to form a bonding area,
The land portion 8 has an original thickness of the lead member. That is, in the land lead portion 4, the land portion 8 has a shape protruding downward, and the land lead portion 4 itself has an area whose upper surface is wider than its lower surface. In FIG. 1, a portion indicated by a broken line on the bottom surface of the tip portion of the land lead portion 4 indicates the land portion 8, and FIG. 2 illustrates a portion where the grid-like hatched region is half-etched. Similarly, as shown in FIG. 2, the outer peripheral portion of the leading end of the lead portion 5 is thinned by half-etching, and the leading end is formed of a wide portion 9.
And a groove 10 is provided near the root of the wide portion 9. The hatched portions in FIGS. 1 and 2 are the grooves 10. When the semiconductor element is mounted using the lead frame of the present embodiment and sealed with resin, the lead portion 5 itself has a single-sided sealing configuration in which the bottom and side surfaces are exposed.
Unlike the conventional lead portion of a full-mold package, a stress due to the sealing resin and a stress after mounting the substrate may be applied to the lead portion. However, even if stress is applied to the lead portion 5 by the stress caused by the sealing resin and the stress after mounting the substrate, the groove portion 10 can absorb the stress in the groove portion 10, and the breakage of the connection portion of the thin metal wire can be prevented. It is possible to prevent and maintain the reliability of the product after mounting. Here, the surface area of the land portion 8 of the land lead portion 4,
The wide part 9 of the lead part 5 constitutes a bonding pad to which a thin metal wire is connected.

A rectangular annular groove 11 is provided on the bottom surface corresponding to the area surrounding the protrusion 6 of the die pad 1 of the lead frame of the present embodiment. This groove 1
By the method (1), the area of contact with the sealing resin can be increased and the contact strength can be improved, trapping moisture from the outside, and improving the reliability as a product. Also, when the substrate is mounted on the bottom surface of the die pad portion 1 using a bonding material such as solder, the solder is prevented from spreading excessively, the mounting accuracy is improved, and the stress of the die pad portion 1 itself due to the heat radiation action from the semiconductor element is reduced. Can be absorbed,
It can interrupt the propagation of stress from inside the package. Further, it is possible to prevent the occurrence of resin burrs due to the encapsulation resin wrapping around the bottom surface of the die pad portion 1 during resin encapsulation. In this embodiment, one groove 11 is provided. However, even if an annular groove is formed on the outer peripheral portion, further improvement in mounting accuracy can be achieved. Further, the shape of the groove 11 may be a virtual circular or rectangular annular groove other than the continuous annular groove shape.

Further, in the present embodiment, the suspension lead portion 3 has a first bent portion 12 and a second bent portion 13 (depressed portion) as two bent portions. The intermediate land portion of the suspension lead portion 3 is arranged upward, and the dummy land portion 14 of the suspension lead portion 3 is maintained at the original height position by the second bent portion 13. 1, the bottom of the land 8 of the land lead 4, and the bottom of the lead 5. As a result, the dummy land portions 14 can be arranged at the four corners of the package bottom when the resin is sealed.
The reason why the intermediate region of the suspension lead portion 3 is arranged above the bottom surface of the other die pad portion 1, the bottom surface of the land portion 8 of the land lead portion 4, and the bottom surface of the lead portion 5 in consideration of reliability. This is because when the resin is sealed, the suspension lead portion 3 disposed above the sealing resin is sealed in the sealing resin.

The dimensions of the grooves 7, 10, 11 in the lead frame of this embodiment are 50 [μm] to 150 [μm].
m], preferably 100 [μm], and a depth (step) of 50 [μm] to 150 [μm], preferably 100 [μm].

The numbers of the land lead portions 4 and the lead portions 5 can be appropriately set according to the number of pins of the semiconductor element to be mounted. The lead frame of the present embodiment has a plated surface, and for example, nickel (Ni), palladium (P
d) and a metal such as gold (Au) are laminated and plated appropriately. Further, the lead frame of the present embodiment does not consist of one pattern as shown in FIG. 1, but can be formed continuously in the left, right, up and down directions.

Next, the die pad portion 1 of the lead frame of the present embodiment may have a configuration as shown in FIGS. FIG. 3 is a view showing a die pad portion, and FIG.
4B is a plan view, FIG. 3B is a side view, and FIG. 4A is a plan view, and FIG. 4B is a side view. In FIG. Is shown.

As shown in FIG. 3 and FIG.
Is different from the configuration in which the protruding portion 6 protrudes from the metal plate itself in a semi-cut state as described above, and the bottom surface itself of the die pad portion 1 is flat. In this case, half-etching is performed on the die pad portion 1 so as to reduce the thickness of the portion other than the portion where the protrusion 6 is formed, and the remaining portion that is not etched constitutes the protrusion 6. In FIG. 3, the shape of the protrusion 6 is cylindrical, and in FIG. 4, the shape of the protrusion 6 is X. In any case, when the semiconductor element is mounted on the protrusion 6 of the die pad 1, a gap is formed between the bottom surface of the semiconductor element and a region other than the protrusion 6 of the die pad 1. Since the sealing resin is interposed between the surface of the die pad portion and the back surface of the semiconductor element, the reliability of the resin-sealed semiconductor device is improved. In particular, in the X-shaped protrusion 6 shown in FIG. 4, the sealing resin can be brought into contact with the back surface of the semiconductor element in a larger area, thereby improving the reliability as a resin-sealed semiconductor device. In addition, the configuration shown in FIGS. 3 and 4 is different from the configuration of the half-cut projection shown in FIG. The thickness between the semiconductor device and the upper surface of the semiconductor device is reduced, and a die pad portion suitable for forming a thin resin-encapsulated semiconductor device can be realized. The shape of the protruding portion 6 may be any shape other than the columnar shape and the X shape as long as it can maintain the reliability as a product in consideration of the influence of the thermal stress of the sealing resin and the like.

When the semiconductor device is mounted on the lead frame of this embodiment, the semiconductor element and each lead are connected by a thin metal wire, and the resin is sealed to form a resin-sealed semiconductor device. The bottom surface of the land portion 8 of the land lead portion 4 is disposed on the bottom surface of the semiconductor device, that is, the package bottom surface, and the bottom surface of the lead portion 5 is disposed outside the land portion 8 to form a linear two-row external arrangement. It constitutes a terminal and can constitute an LGA (land grid array) type package. By forming the resin-encapsulated semiconductor device using the lead frame of the present embodiment, the dummy land portions 14 are formed at the four corners of the package bottom surface.
Can be disposed, so that it is possible to prevent the influence of thermal stress when the package is mounted on the substrate. In addition, a groove 7 is provided on the surface of the die pad portion 1 so that even if resin peeling occurs after resin sealing, the peeling can be trapped in the groove 7, so that the reliability as a resin-sealed semiconductor device can be maintained. Things. In addition, there are other advantages such as improvement of heat radiation characteristics, improvement of accuracy of solder bonding at the time of mounting on a substrate, and mounting of a semiconductor element having a large area.

Next, the resin-sealed semiconductor device of the present invention will be described with reference to the drawings. FIG. 5 is a plan view showing the resin-sealed semiconductor device according to the present embodiment, FIG. 6 is a bottom view showing the resin-sealed semiconductor device according to the present embodiment, and FIG. It is sectional drawing which shows a resin-sealed type semiconductor device. The cross-sectional view of FIG.
7 shows a cross section at one location, DD1 location in FIG. The present embodiment is a resin-sealed semiconductor device using the lead frame shown in FIGS. 1 and 2 as an example.

As shown in FIG. 5, FIG. 6 and FIG. 7, the resin-encapsulated semiconductor device of this embodiment has
An annular groove 7 of a circular or rectangular shape or a combination thereof surrounding the projecting portion 6, a die pad portion 1 having an annular groove portion 11 on the bottom surface, and a conductive material such as a silver paste on the projecting portion 6 of the die pad portion 1. A semiconductor element 15 mounted via a conductive adhesive (not shown), a lead portion 5 having a groove 10 on the surface and having an exposed bottom surface, and a leading end portion of the lead portion 5 extending around the leading end region. A land lead portion 4 which is disposed and has a bottom end exposed to form a land electrode.
A thin metal wire 17 electrically connecting an electrode pad (not shown) on the main surface of the semiconductor element 15 with the bonding pad portion 16 of the land lead portion 4 and the lead portion 5; The semiconductor device 15 includes a region other than the bottom surface of the land lead portion 4, a region other than the outer side surface and the bottom surface of the lead portion 5, and a sealing resin 18 that seals the thin metal wire 17. And sealing resin 1
Land lead portion 4 exposed from package portion 8
And the outer side surface and the bottom surface of the lead portion 5 constitute a land electrode 19 constituting an external electrode when mounted on a mounting board such as a printed circuit board. The bottom surface of the land lead portion 4 in the region is exposed and has a linear two-row land configuration in plan view. The land electrode 19 is exposed from the sealing resin, but is projected and exposed with a step of about 20 [μm], and has a stand-off at the time of mounting the substrate. . Similarly, the bottom surface of the die pad portion 1 is also protruded and exposed, and when mounted on a substrate, the heat radiation efficiency can be improved by solder bonding. The land electrodes 19 on each side of the bottom surface of the package near the corners of the bottom surface of the package portion made of the sealing resin 18.
Between the groups, the dummy land portions 14 are similarly projected and exposed. Further, a concave portion 20 is provided on the bottom surface of the die pad portion 1.
Since the protrusion 6 is formed in a half-cut state by press working, a recess corresponding to the amount of protrusion is formed. In the present embodiment, 200
140 [μm] to 180 [μm] with respect to the thickness of the die pad part 1 (lead frame thickness) made of a metal plate of [μm].
m] (70 [%] to 90 [%] of the thickness of the metal plate itself).

The area of the bonding pad section 16 in the land lead section 4 and the lead section 5 is 100 μm.
m] or more so that a wire bond of not less than [m] can be achieved, a high-density electrode arrangement is possible, and a small and thin resin-sealed semiconductor device can be realized. Furthermore, with the structure of the present embodiment, it is possible to cope with the increase in the number of pins and to realize a high-density surface-mount type resin-encapsulated semiconductor device.
The thickness of the semiconductor device itself is also 80
An extremely thin resin-encapsulated semiconductor device of about 0 [μm] can be realized.

In the resin-encapsulated semiconductor device according to the present embodiment, the area of the top surface of the land lead portion 4 and the top surface of the lead portion sealed with the sealing resin 18 is exposed from the sealing resin 18. , And is configured to be larger than the area of the land electrode 18 on the protruding side, so that the bite with the sealing resin 18 can be improved, the adhesion can be improved, and the reliability of connection at the time of mounting the substrate can be obtained. Is what you can do.

As described above, in the resin-encapsulated semiconductor device of this embodiment, the bottom surface of the land electrode 19 of the land lead portion 4 is disposed on the bottom surface of the package.
Land electrodes 19, which are the bottom surfaces of the lead portions 5, are arranged outside to form external terminals arranged in two rows in a straight line, so that an LGA (land grid array) type package can be formed. . In addition, since the dummy lands 14 can be arranged at the four corners of the package bottom surface, the land electrodes 19 are mounted (joined) to the mounting board and the dummy lands are joined, so that the thermal stress at the time of mounting the board as a package is obtained. The effect can be prevented. A groove 7 is provided on the surface of the die pad 1, and a sealing resin 18 is provided between the back surface of the semiconductor element 15 and the surface of the die pad 1.
Even if the resin peels off, the peeling can be trapped in the groove 7, so that the reliability of the resin-encapsulated semiconductor device can be maintained. In addition, there are other advantages such as improvement of heat radiation characteristics, improvement of accuracy of solder bonding at the time of mounting on a substrate, and mounting of a semiconductor element having a large area.

In the resin-encapsulated semiconductor device of this embodiment, a rectangular annular groove 11 is provided on the bottom surface corresponding to the area surrounding the protrusion 6 of the die pad 1. When the substrate is mounted on the bottom surface of the die pad portion 1 using a bonding agent such as solder, the spread of the solder is prevented, the mounting accuracy is improved, and the stress of the die pad portion 1 itself due to the heat radiation from the semiconductor element is reduced. Can be absorbed. Furthermore, in the resin sealing step at the time of manufacturing, since the sealing sheet is used and the sealing sheet is cut into the groove portion 11 to seal the resin, the generation of resin burrs due to the sealing resin wrapping around the bottom surface of the die pad portion 1 is reduced. Can be prevented,
There is no resin burr on the bottom surface of the die pad portion 1.

Further, the resin-encapsulated semiconductor device of the present embodiment is different from the conventional one in that an LGA-type resin-encapsulated semiconductor device using a lead frame without using a wiring board or a circuit board is used. This is a resin-encapsulated semiconductor device with improved characteristics. FIG. 8 is a sectional view showing an example of a mounting state of the resin-sealed semiconductor device of the present embodiment shown in FIG.

As shown in FIG. 8, in the resin-encapsulated semiconductor device of this embodiment, a land electrode 19 on the bottom surface of a package and a mounting board 21 such as a printed board are bonded to a bonding agent 22 such as solder.
Is connected and implemented. Here land lead part 4
Of the land electrode 19 on the bottom surface of the bonding agent 2
2, the bottom surface of the land electrode 19 of the lead 5 is in contact with the bonding agent 22, and the outer side surface of the lead 5 is exposed. As a result, the bonding agent 22 is mounted in contact with the side surface of the lead portion 5, and a fillet of the bonding agent is formed.

That is, normally, only the bottom portion of the land electrode is bonded to the mounting substrate via the bonding agent, but in the present embodiment, the outer land electrode in the row-shaped land electrode is a lead electrode. Since the outer portion is exposed from the package portion (sealing resin 18), by providing a bonding agent to the outer side surface, a two-point bonding structure of the bottom surface and the side surface is obtained. ,
The mounting strength of the connection with the mounting board can be improved, and the reliability of the connection can be improved. This is a mounting structure that could not be achieved by a normal lead frame LGA type semiconductor device. In the present embodiment, the land electrode configuration is a two-row configuration of a land electrode and a lead type land electrode. A connection portion can be provided on the outside, and an innovative structure that can improve the reliability of connection by a two-point joint structure of the bottom surface and the side surface is provided. In particular, recently, there has been a demand for improved reliability when mounting on a substrate mounted on a mobile phone, a small communication device, or the like. Therefore, the effect of the land electrode structure of the present embodiment is significant.

Next, an embodiment of a method for manufacturing a resin-sealed semiconductor device of the present invention will be described with reference to the drawings.
9 to 14 are cross-sectional views for each process showing the method for manufacturing the resin-encapsulated semiconductor device of the present embodiment. Note that, in the present embodiment, the lead frame as shown in FIG.
An embodiment of manufacturing a GA-type resin-sealed semiconductor device will be described.

First, as shown in FIG.
And a circular annular groove 7 surrounding the protruding portion 6, a die pad portion 1 for mounting a semiconductor element having an annular groove portion 11 and a concave portion 20 on the bottom surface, and the die pad portion 1 is supported by a tip portion. The other end is connected to a frame (not shown), a suspension lead (not shown) having a dummy land in the vicinity of the frame, the bottom surface is a land electrode, and a thin metal wire is formed on the front end surface. A lead portion 5 having a wide bonding pad portion 16 to be connected, a groove portion 10 provided in the vicinity of the bonding pad portion 16 and arranged with regularity, and the other end portion connected to a frame; The upper surface is larger in area than the lower surface, and the distal end portion is arranged on the same straight line as the distal end portion of the lead portion 5 to form a two-row configuration in a planar arrangement together with the lead portion 5, and the other end portion has a frame frame. Land lead part 4 connected to Providing a lead frame having.

Next, as shown in FIG. 10, the semiconductor element 15 is bonded on the protruding portion 6 of the die pad portion 1 of the prepared lead frame via a conductive adhesive such as silver paste with its main surface facing up. .

Next, as shown in FIG.
The electrode pads on the main surface of the semiconductor element 15 mounted thereon by bonding are electrically connected to the bonding pad portions 16 on the upper surfaces of the land lead portions 4 and the lead portions 5 of the lead frame by thin metal wires 17. Here, the area of each bonding pad to which the thin metal wire 17 is connected is 100 [μ].
m] or more.

Next, as shown in FIG. 12, a sealing tape is provided on the back side of the lead frame, that is, on the back side of the lead frame so as to be in close contact with the bottom surface of the die pad portion 1, the bottom surfaces of the land lead portions 4 and the lead portions 5. Alternatively, the sealing sheet 23 is attached. The sealing sheet used here is formed on the back side of the lead frame in the resin sealing step by using a sealing sheet having an adhesive layer having an adhesive force formed thin on the surface with respect to the lead frame. It is possible to reliably prevent the encapsulation resin from flowing around, and as a result, it is possible to prevent resin burrs from adhering to the back surfaces of the die pad portion 1, the land lead portion 4, and the lead portion 5. Therefore, a water jet process for removing resin burrs after resin sealing can be omitted.

Next, as shown in FIG.
Is adhered to the upper surface of the lead frame with a sealing resin 18 typified by an epoxy resin, and the semiconductor element 15, the die pad 1, and the thin metal wires 17 are resin-sealed. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. That is, a single-sided sealing structure excluding the bottom surfaces of the die pad portion 1, the land lead portion 4, and the lead portion 5 is obtained. Particularly, by sealing the resin with the land lead portions 4 and the lead portions 5 pressed against the sealing sheet 23, the occurrence of resin burrs is prevented, and the bottom surfaces of the land lead portions 4 and the lead portions 5 are fixed to the package bottom surface. It can be arranged with a standoff from the (sealing resin 18 bottom surface). In the present embodiment, a rectangular annular groove 11 is provided on the bottom surface corresponding to a region surrounding the protrusion 6 of the die pad portion 1 of the lead frame.
Since the resin is sealed with the sealing sheet 23 biting into the groove 11, it is possible to prevent the occurrence of resin burrs due to the sealing resin wrapping around the bottom surface of the die pad 1 during resin sealing.

The sealing sheet 23 may be attached to the back surface of the lead frame by applying a sealing sheet supplied in advance to a sealing mold for resin sealing before resin sealing, Before sealing, a sheet obtained by attaching a sealing sheet to a lead frame in a separate step may be supplied to a sealing mold and sealed with a resin. The sealing sheet 23 is made of a heat-resistant resin such as PET.

Next, as shown in FIG. 14, after sealing the resin, the sealing sheet is removed, and the portions of the suspension leads, the land leads 4 and the leads 5 connected to the frame are cut off. At this stage, cutting is performed so that the ends of the lead portions 5 are arranged substantially in the same plane as the side surfaces of the package sealed with resin. The bottom surfaces of the land lead portion 4 and the lead portion 5 constitute a land electrode 19, the side surface portion outside the lead portion 5 also constitutes an external electrode, and the bottom surface of the die pad portion 1 is also exposed.
It has a heat dissipation structure.

As described above, according to the method of manufacturing the resin-encapsulated semiconductor device of the present embodiment, the bottom surface of the land electrode 19 of the land lead portion 4 is disposed on the bottom surface of the package, and the lead portion 5 is disposed outside the land electrode 19. Land electrode 1 on the bottom of
9 are arranged to form external terminals in a linear two-row arrangement, so that an LGA (land grid array) type package can be constituted. Further, the configuration of the land electrode is two types of land electrode and lead type land electrode.
Because of the column structure, a connection portion can be provided outside the package, and a two-point bonding structure of the bottom surface and the side surface can realize a resin-encapsulated semiconductor device capable of improving connection reliability. it can.

Next, another embodiment of the lead frame of the present invention will be described with reference to the drawings.

FIG. 15 is a plan view showing a lead frame according to the present embodiment. FIG. 16 is an enlarged view showing a lead portion of the lead frame according to the present embodiment, and FIG. 16A is a plan view and FIG. It is sectional drawing of E-E1 and FF1 location of a). The basic concept is the same as that of the lead frame of the above-described embodiment. In FIG. 15, a region indicated by a two-dot chain line indicates a sealing region when a semiconductor element is mounted using the lead frame of the present embodiment and sealed with a resin, similarly to the case illustrated in FIG. 1. ing.

As shown in FIGS. 15 and 16, the lead frame of this embodiment is made of copper or a metal plate such as a 42-alloy used for a normal lead frame, and has a die pad portion on which a semiconductor element is mounted. 1, a suspension lead 3 connected to the frame 2 at its end and supporting the four corners of the die pad 1 at the tip, and the die pad 1 at the tip.
And a lead frame formed of a linear land lead portion 4 and a linear lead portion 5 whose end portions are connected to the frame 2 so that the land lead portion 4 and the lead portion 5 are respectively connected to the lead frame. An external terminal (land portion) is formed on the bottom surface, and the lead portion 4 can be connected to the mounting board as an external terminal on the outer side surface in addition to the bottom surface.

More specifically, the die pad portion 1 is provided with a circular projection 6 substantially at the center of the surface thereof, and the projection 6 is formed by pressing a flat plate constituting the die pad portion 1 by pressing. A half-cut press is applied to project upward. The projecting portion 6 substantially serves as a portion for supporting the semiconductor element, and when the semiconductor element is mounted, a gap is formed between the surface of the die pad portion 1 excluding the projecting portion 6 and the back surface of the semiconductor element. ing. A groove 7 is provided in a region surrounding the protruding portion 6 on the surface of the die pad portion 1 so that a sealing resin enters the groove 7 when a semiconductor element is mounted and sealed with a resin. In this embodiment, the groove 7 has a circular annular groove 7. When the semiconductor element is mounted on the protruding part 6 of the die pad part 1 with an adhesive by the groove part 7 and the resin is sealed, the sealing resin enters the groove part 7. Therefore, the surface of the die pad part 1 is stressed by thermal expansion. Even if resin peeling occurs between the resin and the sealing resin, the peeling itself can be trapped in the groove, and a decrease in reliability can be prevented. Of course, the configuration of the groove portion 7 may be a configuration in which the groove portions are partially connected other than the annular configuration, and the number thereof may be two or more, three, four, or one. And the size of the semiconductor element to be mounted.

Further, the land lead portions 4 and the lead portions 5 of the lead frame of this embodiment are arranged alternately in parallel when connected to the frame 1, and in the arrangement facing the die pad portion 1, The tips of the land leads 4 extend closer to the die pad 1 than the tips of the leads 5, and the tips are staggered in plan view. In this arrangement, when the semiconductor element is mounted and sealed with resin, two rows of external terminals are arranged in a staggered manner on the bottom surface of the package. The bottom surface of the portion 5 is arranged on the package bottom surface. And especially FIG.
As shown in FIG. 2, the land lead portion 4 is a linear lead, and a land portion 8 having a curvature at a tip portion serving as an external terminal is formed on a bottom portion of the tip portion. Other than that, the thickness is thinned by half-etching, and the land portion 8 has the original thickness of the lead.

That is, in the land lead portion 4, the land portion 8 has a shape projecting downward, and the land lead portion 4 itself has an upper surface larger than the lower surface. FIG. 1
In FIG. 5, a portion indicated by a broken line on the bottom surface of the tip of the land lead portion 4 represents the land portion 8, and FIG. 2 shows a portion where the grid-like hatched region is half-etched. Also, as shown in FIG. 16, the outer peripheral portion of the leading end portion is thinned by half-etching, the leading end portion has a wide portion 9, and a groove portion is formed near the root of the wide portion 9. 1
0 is provided. In addition, a land portion is formed on the bottom surface of the tip portion so that the tip portion has a curvature. FIG.
In FIG. 16, the hatched portion is the groove 10. When the semiconductor element is mounted using the lead frame of the present embodiment and sealed with resin, the lead portion 5 itself has a single-sided sealing configuration in which the bottom surface and side surfaces are exposed. Unlike the part, the stress due to the sealing resin and the stress after mounting on the substrate may be applied to the lead part. However, even if stress is applied to the lead portion 5 by the stress caused by the sealing resin and the stress after mounting the substrate, the groove portion 10 can absorb the stress in the groove portion 10, and the breakage of the connection portion of the thin metal wire can be prevented. It is possible to prevent and maintain the reliability of the product after mounting. Here, the surface region of the land portion 8 of the land lead portion 4 and the wide portion 9 of the lead portion 5 constitute a bonding pad to which a thin metal wire is connected.

The lead frame of the present embodiment is different from the lead frame of the embodiment shown in FIGS. 1 and 2 in that the land lead portions 4 and 5 are linear leads, The portions forming the top 8 have a shape having a curvature at the tip end and are linear with each other. Therefore, in the package arrangement, the lands 8 form a staggered shape.

Further, a rectangular annular groove portion 11 is provided on the bottom surface corresponding to the region surrounding the projecting portion 6 of the die pad portion 1 of the lead frame of the present embodiment. This groove 1
1, when the substrate is mounted on the bottom surface of the die pad portion 1 using a bonding material such as solder, the solder is prevented from spreading excessively, the mounting accuracy is improved, and the die pad portion 1 itself is radiated from the semiconductor element. It can absorb stress. In this embodiment, one groove 11 is used. However, even if an annular groove is formed near the outer peripheral portion of the bottom surface of the die pad 1, further improvement in mounting accuracy can be achieved.
Further, similar to the lead frame shown in FIG. 1, a dummy land portion may be provided on the suspension lead portion 3, or a bent portion may be provided on the suspension lead portion 3.

The numbers of the land lead portions 4 and the lead portions 5 can be appropriately set according to the number of pins of the semiconductor element to be mounted. The lead frame of the present embodiment has a plated surface, and for example, nickel (Ni), palladium (P
d) and a metal such as gold (Au) are laminated and plated appropriately. Further, the lead frame of the present embodiment does not consist of one pattern as shown in FIG. 1, but can be formed continuously in the left, right, up and down directions.

When the semiconductor device is mounted on the lead frame of the present embodiment, the semiconductor element and each lead are connected by a thin metal wire, and the semiconductor device is sealed with a resin to form a resin-sealed semiconductor device. On the bottom surface of the semiconductor device, that is, on the package bottom surface, a bottom surface of a land portion 8 having a curvature at the tip of the land lead portion 4 is arranged. Outside the land portion 8, a tip portion of the lead portion 5 has a curvature. Are arranged to form a staggered two-row arrangement of external terminals.
An LGA (land grid array) type package can be configured. By forming the resin-encapsulated semiconductor device using the lead frame of the present embodiment, the groove 7 is provided on the surface of the die pad portion 1. Since the separation can be trapped in the groove 7, the reliability of the resin-encapsulated semiconductor device can be maintained. In addition, there are other advantages such as improvement of heat radiation characteristics, improvement of accuracy of solder bonding at the time of mounting on a substrate, and mounting of a semiconductor element having a large area.

Next, a resin-sealed semiconductor device of the present invention will be described with reference to the drawings. FIG. 17 is a plan view showing a resin-encapsulated semiconductor device according to the present embodiment.
Is a bottom view showing the resin-sealed semiconductor device according to the present embodiment, and FIGS. 19 and 20 are cross-sectional views showing the resin-sealed semiconductor device according to the present embodiment. The cross-sectional view of FIG. 19 shows a cross-section taken along the line HH1 in FIG. 17 and the cross-section taken along the line JJ1 in FIG. 18, and the cross-sectional view of FIG.
18 shows a cross section taken along a line G1 and a line I-I1 in FIG. The present embodiment is a resin-encapsulated semiconductor device using the lead frame shown in FIGS. 15 and 16 as an example.

As shown in FIGS. 17, 18, 19 and 20, the resin-encapsulated semiconductor device of this embodiment has a protrusion 6 on the surface and a circular or rectangular shape surrounding the protrusion 6 or a rectangular or rectangular shape. And a die pad 1 having an annular groove 11 on the bottom surface, and mounted on the protrusion 6 of the die pad 1 via a conductive adhesive (not shown) such as silver paste. Semiconductor element 15, a groove 5 on the surface, a lead 5 having a bottom exposed, and a lead 5 extending toward the die pad 1 side from a tip region of the lead 5, and a bottom of the tip 5. Are exposed to form a land electrode, and an electrode pad (not shown) on the main surface of the semiconductor element 15 is electrically connected to the bonding pad 16 of the land lead 4 and the lead 5. Fine metal wire 17 and die Region except the bottom surface of the lead portion 1, the mounted semiconductor element 15, the region except the bottom surface of the land lead portion 4, the region except the outer side surface and the bottom surface of the lead portion 5, and the sealing resin that seals the thin metal wires 17. 18. The bottom surface of the tip portion of the land lead portion 4 exposed from the package portion made of the sealing resin 18 and the outer side surface and the bottom surface of the lead portion 5 constitute external electrodes when mounted on a mounting board such as a printed board. A land electrode 19 is formed, and the bottom surface of the lead portion 5 and the bottom surface of the tip portion of the land lead portion 4 in the tip region are exposed to form a two-row staggered land configuration. The land electrode 19 is exposed from the sealing resin, but is projected and exposed with a step of about 20 [μm], and has a stand-off at the time of mounting the substrate. . Similarly, the bottom surface of the die pad portion 1 is also protruded and exposed, and when mounted on a substrate, the heat radiation efficiency can be improved by solder bonding. Further, a concave portion 20 is provided on the bottom surface of the die pad portion 1.
Since the protrusion 6 is formed in a half-cut state by press working, a recess corresponding to the amount of protrusion is formed. In the present embodiment, 200
140 [μm] to 180 [μm] with respect to the thickness of the die pad part 1 (lead frame thickness) made of a metal plate of [μm].
m] (70 [%] to 90 [%] of the thickness of the metal plate itself).

The area of the bonding pad section 16 in the land lead section 4 and the lead section 5 is 100 μm.
m] or more so that a wire bond of not less than [m] can be achieved, a high-density electrode arrangement is possible, and a small and thin resin-sealed semiconductor device can be realized. Furthermore, with the structure of the present embodiment, it is possible to cope with the increase in the number of pins and to realize a high-density surface-mount type resin-encapsulated semiconductor device.
The thickness of the semiconductor device itself is also 80
An extremely thin resin-encapsulated semiconductor device of about 0 [μm] can be realized.

In the resin-sealed semiconductor device of this embodiment, the area of the top surface of the land lead portion 4 and the top surface of the lead portion 5 sealed with the sealing resin 18 is smaller than that of the sealing resin 18.
It is configured to be larger than the area on the side of the land electrode 19 on the side exposed and protruded from the surface, thereby improving the bite with the sealing resin 18 and improving the adhesion, and the reliability of connection when mounting the substrate. Can be obtained.

As described above, in the resin-encapsulated semiconductor device of this embodiment, the bottom surface of the land electrode 19 of the land lead portion 4 is disposed on the bottom surface of the package.
Land electrodes 19, which are the bottom surfaces of the lead portions 5, are arranged outside to form external terminals arranged in a staggered two-row arrangement, and can constitute an LGA (land grid array) type package. . The groove 7 is provided on the surface of the die pad 1, and even if the sealing resin 18 is separated from the back surface of the semiconductor element 15 and the surface of the die pad 1, the separation can be trapped by the groove 7. For,
The reliability can be maintained as a resin-sealed semiconductor device. In addition, there are other advantages such as improvement of heat radiation characteristics, improvement of accuracy of solder bonding at the time of mounting on a substrate, and mounting of a semiconductor element having a large area.

Further, the resin-encapsulated semiconductor device of this embodiment is different from the conventional one in that an LGA-type resin-encapsulated semiconductor device using a lead frame without using a wiring board or a circuit board is used. This is a resin-encapsulated semiconductor device with improved characteristics. FIG. 21 is a cross-sectional view showing an example of a mounted state of the resin-sealed semiconductor device of the present embodiment shown in FIG.

As shown in FIG. 21, in the resin-encapsulated semiconductor device of this embodiment, the land electrode 19 on the bottom surface of the package and the mounting board 21 such as a printed board are bonded to the bonding agent 2 such as solder.
2 and connected. Here, only the bottom portion of the land electrode 19 on the bottom surface of the land lead portion 4 is in contact with the bonding agent 22 and is mounted, but the land electrode 19 of the lead portion 5 has the bottom surface contacting the bonding agent 22. In addition to being mounted, since the outer side surface of the lead portion 5 is exposed, the bonding agent 22 is mounted in contact with the side surface of the lead portion 5.

That is, normally, only the bottom portion of the land electrode is bonded to the mounting board via the bonding agent, but in the present embodiment, the outer land electrode in the row-structured land electrode is a lead electrode. Since the outer portion is exposed from the package portion (sealing resin 18), by providing a bonding agent to the outer side surface, a two-point bonding structure of the bottom surface and the side surface is obtained. ,
The mounting strength of the connection with the mounting board can be improved, and the reliability of the connection can be improved. This is a mounting structure that could not be achieved by a normal lead frame LGA type semiconductor device. In the present embodiment, the land electrode configuration is a two-row configuration of a land electrode and a lead type land electrode. A connection portion can be provided on the outside, and an innovative structure that can improve the reliability of connection by a two-point joint structure of the bottom surface and the side surface is provided.

Next, an embodiment of a method for manufacturing a resin-sealed semiconductor device of the present invention will be described with reference to the drawings.
FIG. 22 to FIG. 27 are cross-sectional views for each process showing the method for manufacturing the resin-encapsulated semiconductor device of the present embodiment. In this embodiment, an embodiment in which an LGA-type resin-sealed semiconductor device is manufactured using a lead frame as shown in FIG. 15 will be described. In this embodiment, for convenience, the land lead portion 4 is used.
Since the description will be made with reference to the sectional view of FIG.

First, as shown in FIG.
And a circular or rectangular annular groove 7 surrounding the protruding portion 6, a semiconductor device mounting die pad portion 1 having an annular groove portion 11 and a concave portion 20 on the bottom surface, and the tip portion supporting the die pad portion 1. The other end has a suspension lead (not shown) connected to a frame (not shown), a bottom surface serving as a land electrode, and a wide bonding pad portion connected to a fine metal wire on the surface of the tip. A groove is provided in the vicinity of the bonding pad portion, the groove portion is arranged with regularity, the other end portion is a lead portion connected to the frame frame, the bottom surface is a land electrode, and a thin metal wire is formed on the front end surface. It has a wide bonding pad portion 16 to be connected, the upper surface is larger in area than the lower surface, the tips are arranged in a staggered manner at the tips of the leads, and a two-row configuration is formed with the leads. The end is free Land the lead portion 4 connected to the beam frame
Is prepared.

Next, as shown in FIG. 23, the semiconductor element 15 is bonded on the protruding portion 6 of the die pad portion 1 of the prepared lead frame via a conductive adhesive such as silver paste with its main surface facing up. .

Next, as shown in FIG.
The electrode pads on the main surface of the semiconductor element 15 mounted thereon by bonding, the land lead portions 4 of the lead frame, and the bonding pad portions 16 on the upper surfaces of the lead portions are connected to the thin metal wires 1.
7 for electrical connection. Here, the area of each bonding pad to which the thin metal wire 17 is connected is 100 [μm].
That is all.

Next, as shown in FIG. 25, the back surface of the lead frame is sealed on the back surface of the lead frame so as to be in close contact with the bottom surface of the die pad portion 1, the land portion of the land lead portion 4, and the bottom surfaces of the lead portions. A stop tape or a sealing sheet 23 is attached. The sealing sheet 23 used here is formed on the back surface side of the lead frame in the resin sealing step by using a sealing sheet having an adhesive layer having an adhesive force to the lead frame formed thin on the surface. It is possible to reliably prevent the encapsulation resin from wrapping around. As a result, it is possible to prevent resin burrs from adhering to the die pad portion 1, the land lead portion 4, and the back surface of the lead portion. Therefore, a water jet process for removing resin burrs after resin sealing can be omitted.

Next, as shown in FIG.
The top surface of the lead frame is sealed with sealing resin 1
Then, the region of the semiconductor element 15, the die pad portion 1, and the thin metal wire 17 is resin-sealed. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. That is, a single-sided sealing structure excluding the die pad part 1, the land lead part 4, and the bottom part of the lead part is obtained.
Further, in particular, the land lead portion 4 and the lead portion are sealed with a sealing sheet 23.
In this state, resin burrs are prevented from being generated, and the bottom surfaces of the land lead portion 4 and the lead portion are arranged with a standoff from the package bottom surface (the bottom surface of the sealing resin 18). be able to.

The sealing sheet 23 may be attached to the back surface of the lead frame by applying a sealing sheet supplied in advance to a sealing mold for resin sealing before resin sealing, or Before sealing, a sheet obtained by attaching a sealing sheet to a lead frame in a separate step may be supplied to a sealing mold and sealed with a resin.

Next, as shown in FIG. 27, after sealing the resin, the sealing sheet is removed, and the portions of the suspension leads, the land leads 4, and the leads connected to the frame are cut.
At this stage, cutting is performed so that the ends of the lead portions are arranged substantially in the same plane as the side surfaces of the package sealed with resin. The land lead 4 and the bottom of the lead are connected to the land electrode 19.
The outer side surface of the lead portion also constitutes an external electrode, the bottom surface of the die pad portion 1 is also exposed, and has a heat dissipation structure.

As described above, according to the method of manufacturing the resin-encapsulated semiconductor device of the present embodiment, the bottom surface of the land electrode 19 of the land lead portion 4 is arranged in the inner row of the package bottom face, and the outer row of the land electrode 19 is arranged in the outer row. Are land electrodes, which are the bottom surfaces of the lead portions, arranged to form external terminals in a linear or staggered two-row arrangement, and can constitute an LGA (land grid array) type package.
Further, since the configuration of the land electrode is a two-row configuration of a land electrode and a lead-type land electrode, a connection portion can be provided outside the package, and a two-point bonding structure of the bottom surface and the side surface can be used for connection. A resin-encapsulated semiconductor device that can improve reliability can be realized.

Next, another embodiment of the lead frame of the present invention will be described. This embodiment is a further improvement of the above-described embodiment, and relates to a lead frame used in an LGA-type resin-sealed semiconductor device that is more suitable for actual production and mass production.

FIG. 28 is a plan view showing a lead frame according to the present embodiment. FIG. 29 is an enlarged view showing a lead portion of the lead frame according to the present embodiment. FIG. 29 (a) is a plan view, and FIG. It is sectional drawing of KK1 and LL1 location of a). In FIGS. 28 and 29, portions indicated by two-dot chain lines indicate sealing lines when a semiconductor element is mounted using the lead frame of the present embodiment and sealed with a resin. The portions (land portions and the like) shown by broken lines in FIGS. 28 and 29 show the configuration of the bottom surface. Further, in FIG. 29, the portions shown by the dashed lines indicate the cutting lines when lead cutting is performed after resin sealing.

As shown in FIGS. 28 and 29, the basic structure of the lead frame of this embodiment is the same as that of the lead frame shown in FIGS.
A circular or rectangular annular groove 7 surrounding the protrusion 6
A die pad portion 1 for mounting a semiconductor element having an annular groove 11 and a concave portion 20 on the bottom surface, and a suspension lead portion 3 supporting the die pad portion 1 at the tip end and connecting to the frame 2 at the other end. And a bottom portion serving as a land portion 8 having a bonding pad portion formed by a wide portion 9 to which a thin metal wire is connected on the surface of the tip portion, and a groove portion 10 provided in the vicinity of the bonding pad portion to form a regular arrangement. And a lead portion 5 having the other end connected to the frame 2 and a land portion 8
The top surface has a wide bonding pad portion to which a thin metal wire is connected, the upper surface is larger in area than the lower surface, and the top portion of the lead portion 5 is arranged in a staggered manner at the top portion. The lead frame includes a land lead portion 4 which forms a two-row configuration with the portion 5 and has the other end connected to the frame 2.

However, the configuration of the land lead portion 4 of the lead frame of the present embodiment is not thinned by the half-etch as shown in FIG. The stepped portion by the half-cut press unit 24 is provided in a region except for the region corresponding to a sealing line for resin sealing and a lead cut portion after resin sealing. That is, the half-cut press part 24 is formed in a region between the front end of the land lead part 4 and the end connected to the frame 2 (in FIG. (Indicated by a line).

The configuration of the half-cut press section 24 is as follows.
A pressing force is applied to the land lead portion 4 from below by a punch member, the portion to which the pressing force is applied is cut and stopped in a semi-cut state before being separated, and the pressed portion is projected. The half-cut state is formed. When a pressing force is applied to the land lead portion 4 by the punch member, the lead is pressed so that the leading end side and the distal end side have different amounts of displacement, and the leading end side of the lead shifts more than the distal end side. By forming the half-cut state as described above, the position of the bottom surface of the lead tip can be positioned lower than the position of the bottom surface on the lead end side. The stepped portion of the half-cut press section 24 of the present embodiment, which is formed by half-cut, has a lead frame thickness of 200 [μm].
In FIG. 29 (b), the step (H1) between the position of the bottom surface of the lead tip and the position of the bottom surface of the lead terminal side is 20 [μm] in the present embodiment.
m]. This is achieved by half-cut pressing
A step is formed by the amount of increase in [μm], and the lead tip is lowered by 20 [μm] from the lead end side, so that the position of the bottom surface of the lead tip is lower than the position of the bottom surface on the lead end side. Can be located.

In the lead frame of this embodiment, the half-cut press portion 24 is provided on the land lead portion 4 having a long lead length.
When the resin is sealed, only the outer portion of the land lead portion 4 outside the resin sealing line is pressed against the sealing mold surface, and the bottom surface of the land portion 8 of the land lead portion 4 has an adhesive. The sealing resin can be securely adhered even to a sealing sheet that does not have a sealing resin. It is possible to prevent the resin burrs from being formed on the lands 8 serving as the land electrodes of the leads. Therefore, when the lead length is long, that is, when the lead portion is pressed against the mold at the time of resin sealing, and the lead bottom surface cannot be securely brought into close contact with the sealing sheet, the lead portion as in this embodiment is used. It is a very useful method to form a step by providing a half-cut press section 24 on the lead, and it is possible to eliminate resin burrs on the lead bottom exposed from the sealing resin section (package section) as a product. .

Next, an embodiment of a method of manufacturing a resin-sealed semiconductor device of the present invention will be described. 30 to 35 are cross-sectional views for each process showing the method for manufacturing the resin-encapsulated semiconductor device of the present embodiment. In the present embodiment, an embodiment will be described in which an LGA resin-sealed semiconductor device is manufactured using a lead frame as shown in FIG. Further, in the present embodiment, the cross section of the land lead portion 4 will be described for convenience, so that the cross section of the lead portion 5 is not shown in the drawing.

First, as shown in FIG.
And a circular or rectangular annular groove 7 surrounding the protruding portion 6, a semiconductor device mounting die pad portion 1 having an annular groove portion 11 and a concave portion 20 on the bottom surface, and the tip portion supporting the die pad portion 1. A suspension lead portion (not shown) connected to a frame (not shown) at the other end, and a bonding pad portion formed by a wide portion having a bottom surface serving as a land electrode and a thin metal wire connected to a front end surface thereof. Grooves are provided in the vicinity of the bonding pad portions, are arranged with regularity, the other end portion is a lead portion connected to the frame, the bottom surface is a land electrode 19, and the tip surface is metal. It has a wide bonding pad portion 16 to which the thin wire is connected,
A land lead portion in which the upper surface is larger in area than the lower surface, the tip portions of the adjacent lead portions are arranged in a staggered manner at the tip portions, and form two rows with the lead portions, and the other end is connected to the frame. And a semi-cut press part 24 in a region between the tip part and the other end part connected to the frame, and the half-cut breath part 24 is used to position the bottom of the tip part of the land lead part. And a land lead portion 4 located below the position of the bottom surface on the other end side.

Next, as shown in FIG. 31, the semiconductor element 15 is joined on the protruding portion 6 of the die pad portion 1 of the prepared lead frame via a conductive adhesive such as silver paste with its main surface facing up. .

Next, as shown in FIG.
The electrode pads on the main surface of the semiconductor element 15 mounted thereon by bonding, the land lead portions 4 of the lead frame, and the bonding pad portions 16 on the upper surfaces of the lead portions are connected to the thin metal wires 1.
7 for electrical connection. Here, the area of each bonding pad to which the thin metal wire 17 is connected is 100 [μm].
That is all.

Next, as shown in FIG. 33, the back side of the lead frame is brought into close contact with the bottom side of the lead frame, that is, the bottom surface of the die pad portion 1, the bottom surface of the tip portion of the land lead portion 4, and the bottom surface of the lead portion. To the sealing tape or the sealing sheet 25. Sealing sheet 25 used here
Uses a sealing sheet that has no adhesive and can be easily peeled off when unnecessary. Here, a half-cut press portion 24 is provided in a region between the front end portion and the other end portion connected to the frame,
Since the lead frame having the land lead portion 4 in which the position of the bottom surface of the leading end of the lead is located lower than the position of the bottom surface on the other end side by the half-cut breath portion 24 is used, a land having a long lead length is used. Even in the case of the lead portion, the bottom surface of the tip portion (the surface of the land electrode 19) can be securely adhered to the sealing sheet 25, so that the adhesive force of the sealing sheet 25 is not necessarily required.

Next, as shown in FIG.
The upper surface side of the lead frame is resin-sealed with a sealing resin 18 in a state where the contact is made, and the regions of the semiconductor element 15, the die pad portion 1, and the fine metal wires 17 are resin-sealed. Usually, single-sided sealing is performed by transfer molding using upper and lower sealing dies. That is, a single-sided sealing structure excluding the die pad portion 1, the land lead portion 4, and the bottom portion of the lead portion is formed. In addition, by sealing the resin with the land lead portion 4 and the lead portion pressed against the sealing sheet 25, the occurrence of resin burrs is prevented, and the bottom surfaces of the land lead portion 4 and the lead portion are sealed with the package bottom surface (sealing surface). It can be arranged with a standoff from the bottom of the resin 18).

The sealing sheet 25 may be brought into contact with the back surface of the lead frame by bringing the sealing sheet 25, which has been supplied in advance to a sealing mold for resin sealing, into contact with the resin before sealing. Then, a resin sheet in a state where the sealing sheet 25 is brought into contact with the lead frame in a separate step before resin sealing may be supplied to a sealing mold to perform resin sealing.

Next, as shown in FIG. 35, after sealing with a resin, the sealing sheet is removed by peeling off, and the portions of the suspension lead portions, land lead portions 4 and lead portions connected to the frame are cut off, and the resin sealing is performed. A semiconductor device having a stop type is obtained. At this stage, cutting is performed so that the ends of the lead portions are arranged substantially in the same plane as the side surfaces of the package sealed with resin. The land lead portion 4 and the bottom surface of the lead portion constitute a land electrode 19, the side portion outside the lead portion also constitutes an external electrode, the bottom surface of the die pad portion 1 is also exposed, and has a heat dissipation structure.

According to the configuration of the land lead portion 4 of the present embodiment, the sealing line of the land lead portion 4 (two-dot chain line) is applied to the land lead portion 4 whose lead length is longer than the lead portion 5 at the time of resin sealing. Is pressed against the mold surface and the land lead portion 4 is pressed against the sealing sheet 25, the leading end of the land lead portion 4 does not float, and the bottom surface is
5 and is in a state of biting. By performing resin sealing (resin injection) in this state, the sealing resin 18 does not go around the bottom surface of the tip portion of the land lead portion 4, and the resin is applied to the surface of the land electrode 19 on the bottom surface of the land lead portion 4. Burrs can be prevented from occurring. This is because the surface position of the bottom surface of the tip portion of the land lead portion 4 and the surface position of the bottom surface of the pressed portion have a step, and the surface position of the bottom surface of the tip portion of the land lead portion 4 is located below. The bottom surface of the tip portion of the land lead portion 4 surely adheres to the sealing sheet 25 by the lead pressing at the time of resin sealing, and even if the sealing resin to which the pressure is applied is injected, the sealing sheet 25 and the land lead This is because the sealing resin 18 does not enter between the bottom of the tip of the portion 4 (land electrode 19).

In the present embodiment, the semi-cut press portion 24 is provided on the land lead portion 4 having a long lead length, but is not basically required for the lead portion 5 having a relatively short lead length. This is because when the lead length is short, only the outer portion (near the portion connected to the frame) of the lead portion 5 outside the resin sealing line (two-dot chain line) is pressed against the sealing mold surface during resin sealing. Thus, even if the sealing resin 18 to which the pressure is applied is injected, the sealing resin 18 can be surely brought into close contact with the sealing sheet 25 and between the sealing sheet 25 and the bottom surface of the tip of the lead portion 5. This is because no burrs enter and no resin burrs occur on the surface of the land electrode. Therefore, when the lead length is long, that is, when the lead portion is pressed against the mold at the time of resin sealing, and the lead portion has a lead length such that the bottom surface of the lead cannot be securely adhered to the sealing sheet 25, as in the present embodiment, It is a very useful method to provide the semi-cut press portion 24 at the lead portion, and it is possible to eliminate the resin burr on the bottom surface of the lead exposed from the sealing resin 18 as a product.

By providing the sealing sheet itself with an adhesive force, the bottom surface of the lead can be securely adhered to the sealing sheet. However, a separate step for removing the sealing sheet with the adhesive is required. Since the sealing sheet with such an adhesive is expensive in terms of cost, it is better to use the structure of the lead portion shown in the present embodiment in order to reduce the cost and the manufacturing cost without using an adhesive. This is advantageous because an ordinary sealing sheet can be used. By using the structure of the lead portion shown in the present embodiment and sealing the resin with a sealing sheet without an adhesive, the sealing sheet can be easily removed by a simple means by peel-off after the resin sealing, thereby manufacturing. There is no problem in cost and manufacturing tact.

As described above, the semiconductor element is mounted and sealed with resin by using the lead frame as shown in the present embodiment, so that the semiconductor element is electrically connected to the bottom surface of the resin-sealed semiconductor device. The land electrodes thus formed can be arranged in two linear or staggered rows. as a result,
As a result, a semiconductor device of a surface mounting type can be obtained, and the reliability of substrate mounting can be improved as compared with the conventional mounting by lead bonding.

The resin-encapsulated semiconductor device of this embodiment does not use a substrate such as a circuit board provided with land electrodes as in a conventional BGA type semiconductor device, but is made of a metal plate called a lead frame. L from frame body
It constitutes a GA-type semiconductor device, and is more advantageous than a conventional BGA-type semiconductor device in terms of mass productivity and cost.

In the resin-encapsulated semiconductor device of this embodiment, the outer land electrodes in the row-structured land electrodes are:
Since the side portion of the outer portion is exposed from the package portion, a fillet is formed by providing a bonding agent to the outer side surface, and a two-point joint structure of the bottom surface and the side surface Thus, the mounting strength of the connection with the mounting board can be improved, and the reliability of the connection can be improved. This is a mounting structure that could not be achieved by a normal lead frame LGA type semiconductor device. In the present embodiment, the land electrode configuration is a two-row configuration of a land electrode and a lead type land electrode. A connection portion can also be provided on the outside, and the mounting strength can be improved by a two-point bonding structure of the bottom surface and the side surface.

[0103]

As described above, according to the lead frame of the present invention,
A resin-encapsulated semiconductor device having land electrodes instead of conventional beam-shaped lead electrodes can be realized. According to the present invention, land electrodes on the bottom surface of the resin-encapsulated semiconductor device can be formed from a frame state without using a circuit board or the like. The reliability of mounting can be improved.

In the method of manufacturing a resin-encapsulated semiconductor device, a lead-bend step is not required because a protruding lead is not required unlike the conventional method. The bottom surface of the land electrode of the land lead portion is disposed, and the land electrode which is the bottom surface of the lead portion is disposed on the outer row of the land electrode to form two rows of external terminals in a linear or staggered arrangement. A mold package can be configured. And in the land electrode of the row configuration on the bottom surface of the resin-sealed semiconductor device of the present invention,
Since the outer land electrode is formed of a lead portion, and the side end of the outer portion is exposed from the package portion, a fillet portion is formed by providing a bonding agent such as solder to the outer side surface. And a two-point bonding structure of the bottom surface and the side surface, so that the mounting strength of the connection with the mounting board can be improved and the reliability of the connection can be improved.

Further, in the actual manufacturing process of the resin-encapsulated semiconductor device, especially in the mass production process, the use of the lead frame of the present invention can reliably prevent the occurrence of resin burrs on the land electrode surface during resin encapsulation. Things.

[Brief description of the drawings]

FIG. 1 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 2 is a view showing a lead frame according to an embodiment of the present invention;

FIG. 3 is a view showing a die pad portion of the lead frame according to the embodiment of the present invention;

FIG. 4 is a view showing a die pad portion of the lead frame according to the embodiment of the present invention;

FIG. 5 is a plan view showing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 6 is a bottom view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 7 is a sectional view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 8 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention.

FIG. 9 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 10 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 11 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 12 is a sectional view showing the method for manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 13 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 14 is a sectional view showing the method of manufacturing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 15 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 16 is a view showing a lead frame according to an embodiment of the present invention;

FIG. 17 is a plan view showing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 18 is a bottom view showing the resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 19 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 20 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 21 is a sectional view showing a resin-sealed semiconductor device according to one embodiment of the present invention;

FIG. 22 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 23 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 24 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 25 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 26 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 27 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 28 is a plan view showing a lead frame according to an embodiment of the present invention.

FIG. 29 is a view showing a lead frame according to an embodiment of the present invention;

FIG. 30 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 31 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 32 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 33 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 34 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 35 is a sectional view showing the method of manufacturing the resin-encapsulated semiconductor device according to one embodiment of the present invention;

FIG. 36 is a plan view showing a conventional lead frame.

FIG. 37 is a sectional view showing a conventional resin-encapsulated semiconductor device.

FIG. 38 is a plan view showing a method for manufacturing a conventional resin-encapsulated semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Die pad part 2 Frame frame 3 Suspended lead part 4 Land lead part 5 Lead part 6 Projection part 7 Groove part 8 Land part 9 Wide part 10 Groove part 11 Groove part 12 First bent part 13 Second bent part 14 Dummy land part 15 Semiconductor Element 16 Bonding pad part 17 Fine metal wire 18 Sealing resin 19 Land electrode 20 Depression 21 Mounting board 22 Bonding agent 23 Sealing sheet 24 Half-cut press part 25 Sealing sheet

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[Procedure amendment]

[Submission date] November 10, 1999 (1999.11.
10)

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claims

[Correction method] Change

[Correction contents]

[Claims]

[Procedure amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0013

[Correction method] Change

[Correction contents]

[0013]

In order to solve the above-mentioned conventional problems, a lead frame according to the present invention is provided with a frame main body made of a metal plate, and is disposed in an area of the frame main body, and has a protrusion on a surface. A die pad portion for mounting a semiconductor element having a, a leading end portion supporting the die pad portion, a suspending lead portion connected to a frame at the other end portion, and a bonding pad portion to which a fine metal wire is connected to the tip end surface. The other end is connected to the frame, the bottom portion is a lead portion serving as a land electrode, and the tip portion of the lead portion is closer to the die pad portion than the tip portion of the lead portion. Extending and arranged, the other end is connected to the frame,
Part of the bottom surface is more land lead portion becomes the land electrode, the land lead portion has a stepped difference portion in the region between the end connected to the framework and the distal end, the step The position of the land electrode bottom surface of the land lead portion is a lead frame located below the position of the lead bottom surface on the terminal side.

[Procedure amendment 3]

[Document name to be amended] Statement

[Correction target item name] 0021

[Correction method] Change

[Correction contents]

More specifically, a pressing force is applied to a land lead portion of the lead frame and a portion of the lead portion on the frame side to seal the land electrode on the bottom surface of the land lead portion and the land electrode on the bottom surface of the lead portion. In a state where the semiconductor device is pressed against and adhered to the sheet, at least the bottom surface of the die pad portion, the land electrode on the bottom surface of the land lead portion, and the land electrode portion on the bottom surface of the lead portion, the semiconductor element, the die pad portion, the metal In the step of sealing the area of the thin wire with a resin, when a pressing force is applied to a portion of the land lead portion on the frame side, the land lead portion is provided on the land lead portion.
By the stepped difference portion, the position of the land electrode bottom surface of the land lead portion is positioned below the position of the bottom surface of the other end side, in a state where the land electrode bottom surface in close contact with the reliable sealing sheet This is a method of manufacturing a resin-sealed semiconductor device in which a semiconductor element, a die pad portion, and a region of a thin metal wire are resin-sealed as the upper surface side of the lead frame.

 ──────────────────────────────────────────────────続 き Continuing from the front page (72) Inventor Shuji Takasaki 1-1, Kochi-cho, Takatsuki-shi, Osaka, Japan Matsushita Electronics Co., Ltd. (72) Eiichi Nakazawa 1-1, Kochi-cho, Takatsuki-shi, Osaka Matsushita Electronics Incorporated (72) Inventor Takashi Ono 1-1 Sachimachi, Takatsuki-shi, Osaka Matsushita Electronics Co., Ltd. F-term (reference) 4M109 AA01 BA01 CA21 DA04 DB03 DB06 DB15 DB16 FA01 FA02 FA03 FA04 5F061 AA01 BA01 CA21 EA01 EA03 5F067 AA01 AA03 AA04 AA05 AA06 AA09 AA10 AA11 AB04 AB07 BA05 BB01 BB02 BC01 BC06 BC07 BE01 BE02 CA01 CC08 DA17 DE01 DE09 DE10 DE14 DF02 DF03

Claims (10)

[Claims] 1. A frame main body made of a metal plate, a die pad portion provided in a region of the frame main body and having a protruding portion on a surface thereof for mounting a semiconductor element, and a tip end portion supporting the die pad portion. A lead having a suspension lead connected to the frame at the other end, and a bonding pad connected to the thin metal wire on the surface of the tip, the other end being connected to the frame and the bottom serving as a land electrode. And a tip portion of the lead portion is arranged in a tip portion region of the lead portion so as to extend toward the die pad portion side from the tip portion of the lead portion. The part comprises a land lead part serving as a land electrode, and the land lead part has a step part by a half-cut press part in a region between the tip part and the terminal part connected to the frame, The above-mentioned la A lead frame, wherein the position of the land electrode bottom surface of the lead portion is located lower than the position of the lead bottom surface on the terminal side. 2. The step according to claim 1, wherein the step in the region between the tip of the land lead and the end connected to the frame is a step formed by a half-cut press. Lead frame. 3. The lead frame according to claim 1, wherein the die pad portion has an annular groove surrounding the protrusion on the surface. 4. The lead frame according to claim 1, wherein the die pad portion has an annular groove on a bottom surface thereof. 5. The lead frame according to claim 1, wherein the lead portion has a bonding pad portion on a front end surface thereof, and has a groove near the bonding pad. 6. The lead frame according to claim 1, wherein at least the land electrodes of the lead portions and the land electrodes of the land lead portions are arranged in a staggered two rows in a planar arrangement. . 7. A die pad for mounting a semiconductor element having a protruding portion on the surface, a suspension lead portion supporting the die pad at a distal end and connected to a frame at the other end, and a metal on a distal end surface. A lead portion having a bonding pad portion to which a thin wire is connected, a bottom surface serving as a land electrode, and the other end portion connected to the frame, and a tip end portion of the lead portion in the tip end region of the lead portion; A land lead portion that extends toward the die pad portion side from the portion, the other end portion is connected to the frame frame, and a part of the bottom surface is a land lead portion that serves as a land electrode. And a step portion in a region between the end portion connected to the frame and the position of the land electrode bottom surface of the land lead portion is lower than the position of the lead bottom surface on the end portion side by the step portion. Located in Preparing a lead frame, and mounting a semiconductor element on the protrusion of the die pad portion of the prepared lead frame, and an electrode pad on a main surface of the semiconductor element mounted on the die pad portion, Electrically connecting a land lead portion of the lead frame and each upper surface of the lead portion with a thin metal wire; and sealing at least a die pad portion, a land lead portion, and a bottom surface of the lead portion on the back surface side of the lead frame. Contacting the sheet, at least the land lead portion,
In a state in which a pressing force is applied to a portion of the lead portion on the frame side, the land electrode on the bottom surface of the land lead portion, and the land electrode on the bottom surface of the lead portion are pressed against and adhered to the sealing sheet, at least the Die pad portion bottom surface, land electrode of the land lead portion bottom surface, the semiconductor element as the upper surface side of the lead frame except for the land electrode portion of the lead portion bottom surface, the die pad portion, a step of resin sealing the area of the fine metal wire, The sealing sheet is removed from the lead frame, and the suspension lead portion, the land lead portion, and the portion of the lead portion connected to the frame frame are connected to the suspension lead portion, the land lead portion, and the lead portion. In which the cut surface of the package is cut so as to be substantially flush with the side surface of the package portion formed by resin sealing. Method for manufacturing a resin-sealed semiconductor device according to. 8. A process for preparing a lead frame, comprising: a die pad for mounting a semiconductor element having a protruding portion on the surface; and a suspension lead supporting the die pad at a leading end and being connected to a frame at the other end. And a bonding pad portion to which a thin metal wire is connected on the surface of the tip portion, a bottom portion serving as a land electrode, and a lead portion having the other end portion connected to the frame, and a tip portion in the tip portion region of the lead portion. A portion is disposed so as to extend toward the die pad portion side from the tip portion of the lead portion, the other end portion is connected to the frame, and a part of the bottom surface is a land lead portion serving as a land electrode, The land lead portion has a step portion by a half-cut press portion in a region between a tip portion and a terminal portion connected to the frame, and the land lead portion is formed by a step portion by the half-cut press portion. 8. The resin-encapsulated semiconductor device according to claim 7, wherein the position of the bottom surface of the land electrode is a step of preparing a lead frame located below the position of the lead bottom surface on the terminal side. Production method. 9. A pressing force is applied to a land lead portion of the lead frame and a portion of the lead portion on the frame side to press the land electrode on the bottom surface of the land lead portion and the land electrode on the bottom surface of the lead portion against a sealing sheet. In the state of being brought into close contact, at least the bottom surface of the die pad portion, the land electrode on the bottom surface of the land lead portion, and the region of the semiconductor element, the die pad portion, and the thin metal wire as the upper surface side of the lead frame except for the land electrode portion on the bottom surface of the lead portion. In the resin sealing step, when a pressing force is applied to a portion of the land lead portion on the frame side, a step formed by a semi-cut press portion provided in the land lead portion causes the land electrode of the land lead portion to be formed. Because the position of the bottom surface is located below the position of the bottom surface on the other end side, the bottom surface of the land electrode is securely adhered to the sealing sheet. 9. The method of manufacturing a resin-encapsulated semiconductor device according to claim 8, wherein a region of the semiconductor element, the die pad portion, and the thin metal wire as an upper surface side of the lead frame is resin-encapsulated. 10. A sealing sheet having no adhesive is used in the step of bringing the sealing sheet into contact with at least the bottom surfaces of the die pad portion, the land lead portion, and the lead portion on the back surface side of the lead frame. The method for manufacturing a resin-encapsulated semiconductor device according to claim 7.