JP3503502B2 - Resin-sealed semiconductor device and method of manufacturing the same - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-sealed semiconductor device using a terminal land frame having a land electrode and a method for manufacturing the same, in order to form an external electrode on the bottom surface of the semiconductor device when the semiconductor device is constructed. It is about.

[0002]

2. Description of the Related Art In recent years, in order to cope with miniaturization of electronic equipment, it is required to mount semiconductor parts mounted on the electronic equipment at a high density, and accordingly, the miniaturization and thinning of semiconductor parts are accelerated. Is progressing.

A resin-sealed semiconductor device will be described below as a conventional semiconductor component. Currently, in order to mount a semiconductor device on the surface of a printed circuit board with high density, there is widely used a QFP packaging technology in which a large number of gull-wing-shaped lead terminals are arranged on the side surface of a square or rectangular sealing resin that seals a semiconductor element. It is used. However, due to the higher functionality of semiconductor elements (higher LSI), it is strongly desired for the QFP packaging technology to further increase the number of external lead terminals. Therefore, in order to increase the number of external lead terminals without increasing the external dimensions of the QFP package, currently, a narrow pitch QFP with a terminal pitch of 0.3 [mm] is used.
Some packages have been put to practical use. However, in the handling of these semiconductor devices, the bending of the terminal leads becomes a serious problem. That is, in manufacturing and mounting a narrow-pitch QFP package, it is sufficient to reduce the manufacturing yield of the semiconductor device due to bending of the lead, the yield when mounting the semiconductor on the printed circuit board, and the quality of the printed circuit board on which the semiconductor device is mounted. Necessary measures are required.

Therefore, a BGA (ball grid array) package has been developed as a packaging technique for solving the above-mentioned problems of the QFP package. FIG. 64 shows a cross-sectional structure of a BGA package which is a conventional resin-sealed semiconductor device.

As shown in the figure, in the BGA package, the semiconductor element 1 is mounted and adhered on the upper surface of the double-sided wiring board 3 via the adhesive 2. Wiring patterns 4a and 4b are formed on the upper and lower surfaces of the double-sided wiring board 3, and the wiring patterns 4a and 4b on the upper and lower surfaces thereof are electrically connected by a conductor 6 formed on the surface of the through hole 5. There is. The electrode pad 7 formed on the upper surface of the semiconductor element 1 and the wiring pattern 4a are electrically connected by a thin metal wire 8. The surface of the wiring pattern 4a other than the place for electrical connection by the thin metal wire 8 is covered with a solder resist 9.
The semiconductor element 1, the thin metal wires 8, and the double-sided wiring board 3 are molded and protected by the sealing resin 10.

The surface of the wiring pattern 4b on the lower surface of the double-sided wiring board 3 is also covered with a solder resist 9 except for a part thereof. Solder balls 11 are formed on the surface of the wiring pattern 4b which is not covered with the solder resist 9. The solder balls 11 are two-dimensionally arranged in a grid pattern on the lower surface of the double-sided wiring board 3. When the semiconductor device mounted by the BGA package method is mounted on the printed board, the electrical connection is made via the solder balls 11.

[0007]

However, each of the conventional resin-encapsulated semiconductor devices described above has various problems as described below.

Due to the higher functionality of semiconductor devices (higher LSI), it is strongly desired for the QFP packaging technology to further increase the number of external lead terminals. However, QFP
In the resin-sealed semiconductor device represented by a package, the bending of the terminal lead becomes a big problem in handling the device. Also, there are many problems in mounting technology, that is,
In manufacturing and mounting a narrow-pitch QFP package, sufficient measures are required to reduce the manufacturing yield of a semiconductor device, the yield when mounting a semiconductor on a printed circuit board, and the quality of a printed circuit board on which a semiconductor device is mounted. .

The BGA package type resin-sealed semiconductor device shown in FIG. 64 has a larger number of terminals than the QFP package in the same package size by arranging external electrode terminals two-dimensionally on the lower surface of the semiconductor device. There is a feature that you can do it. However, on the other hand, there are some points inferior to the QFP package.

That is, the BGA package type resin-sealed semiconductor device requires a double-sided wiring board for adhering and supporting a semiconductor element. In addition, the introduction of new manufacturing equipment other than the conventional QFP package manufacturing equipment is essential,
Equipment costs will occur. Further, in the BGA package method, a glass / epoxy resin substrate is usually used as the double-sided wiring substrate. Therefore, measures against distortion applied to the semiconductor element in the resin bonding / heat curing process of the semiconductor element, and double-sided wiring board in the process of electrically connecting each electrode pad of the semiconductor element and the wiring pattern on the surface of the double-sided wiring board by wire bonding Warpage countermeasures, board warpage countermeasures by resin-sealing only the side to which the semiconductor element is bonded, and even if there is some warpage on the double-sided wiring board There are many problems to be solved in manufacturing technology such as the above.

Further, the guarantee of the reliability of the package, especially the moisture resistance is also an important subject for consideration. For example, when the adhesion strength at the interface between the glass / epoxy resin and the molded sealing resin is weak, there is a problem that quality assurance becomes difficult in environmental tests such as a high temperature / high humidity test, a pressure cooker test, and the like.

As a solution to these problems, the use of a ceramic double-sided wiring board is a very effective method, but on the other hand, there is a drawback that the board cost is high.

The present invention is based on the QFP package technology using the above-mentioned conventional lead frame and the BG using the substrate.
In view of various problems in the manufacturing process and mounting of the resin-encapsulated semiconductor device using the A package technology, these problems are solved, and a small and thin resin-encapsulated semiconductor device is realized. Therefore, a terminal land frame suitable for the same, a method for manufacturing the same, a resin-sealed semiconductor device using the same, and a method for manufacturing the same are provided. In addition, it improves reliability in the solder reflow process and reduces electrical connection defects due to mechanical, thermal, and insufficient strength after mounting on the board. Provided are a terminal land frame capable of realizing a bottom-exposed resin-sealed semiconductor device, a method of manufacturing the same, a resin-sealed semiconductor device using the same, and a method of manufacturing the same.

That is, the first object of the present invention is to provide a small resin-sealed semiconductor device of the electrode bottom exposed type by providing means for arranging a land portion as a signal connecting lead portion and fixing means for a die pad portion. Is to be realized.

A second object of the present invention is a means for arranging land portions in a grid pattern as lead portions for signal connection,
By providing a fixing means for the die pad portion, it is possible to realize a resin-sealed semiconductor device that is small in size, has a large number of pins, and has good heat dissipation and has an exposed bottom surface of the electrode.

A third object of the present invention is to provide a means for increasing the holding force of the sealing resin when the lower surfaces of the land portion and the die pad portion are projected from the sealing resin, whereby the land portion and the die pad portion are provided. Another object of the present invention is to realize an electrode bottom exposed type resin-sealed semiconductor device in which peeling from the sealing resin is suppressed.

Further, a fourth object of the present invention is to realize a resin-sealed semiconductor device of the electrode bottom exposed type having high mounting connection reliability by providing a means for cutting out the bottom surface of the land portion arranged in a grid pattern. It is to be.

A fifth object of the present invention is to provide a grid shape having good heat dissipation characteristics by taking measures to prevent the generation of resin burr when the lower surfaces of the land portion and the die pad portion are projected from the sealing resin. It is to realize an electrode bottom surface exposed type resin-sealed semiconductor device having a land portion arranged in the.

A sixth object of the present invention is to eliminate suspension leads and to cope with a change in size of a semiconductor element to be mounted, and to have a grid-like array of land portions capable of improving reliability. Is to realize a resin-sealed semiconductor device in which the electrode bottom surface is exposed.

Furthermore, a seventh object of the present invention is to provide a method of manufacturing a resin-sealed semiconductor device having good productivity by providing means for efficiently separating the resin-sealed semiconductor device from the frame after sealing the resin-sealed semiconductor device. Is to provide.

[0021]

In order to solve the above-mentioned conventional problems, a terminal land frame of the present invention comprises a frame frame and a region of a thin fixing portion integrally provided in the region of the frame frame, A die pad portion for mounting a semiconductor element having the same thickness as the frame frame integrally provided in the substantially central portion in the area of the fixing portion, and within the area of the fixing portion, around the die pad portion. A terminal land frame, which is integrally provided and arranged, and is composed of a plurality of lands having the same thickness as that of the frame, wherein the fixing portion itself is thin and separable from the land portion and the die pad portion. It is a terminal land frame that is composed of a thin portion.

Further, the frame frame, the region of the thin fixing portion integrally provided in the region of the frame frame, and the frame frame integrally provided at substantially the central portion in the region of the fixing portion And a die pad portion for mounting a semiconductor element having a thickness of, and in a region of the fixing portion, the plurality of rows are arranged integrally around the die pad portion and arranged integrally, and the same thickness as the frame frame. A terminal land frame comprising a plurality of lands, each of which is made up of a plurality of lands, and the fixing portion itself is a thin land portion that is separable from the land portion and the die pad portion.

Further, the frame frame, the region of the thin fixing portion integrally provided in the region of the frame frame, and the frame frame integrally provided in the substantially central portion in the region of the fixing portion. And a die pad portion for mounting a semiconductor element having a thickness of, and in a region of the fixing portion, the plurality of rows are formed integrally around the die pad portion and arranged integrally, and are thinner than the thickness of the frame frame. A terminal land frame composed of a plurality of lands that are thicker than the fixed part, wherein the fixed part itself is composed of a thin part that is thin enough to be separated from the land part and the die pad part. It is a terminal land frame.

Further, a frame frame, a region of a thin fixing portion integrally provided in the region of the frame frame, and a frame frame integrally provided in a substantially central portion in the region of the fixing portion. A plurality of post portions for mounting a semiconductor element having a thickness of, and a plurality of post portions for equipping the periphery of the die pad portion in the area of the fixing portion, the plurality of post portions having the same thickness as the frame frame. A terminal land frame including a land portion, wherein the fixing portion itself is a thin land portion that is thin enough to be separated from the land portion and the die pad portion.

More specifically, the die pad portion is a terminal land frame whose size is smaller than that of the mounted semiconductor element. Further, the die pad portion is a terminal land frame having a step portion in its sectional structure. The land portion is a terminal land frame having a step portion in its cross-sectional structure. In addition, the land portion is a terminal land frame having a plurality of groove portions on its upper surface, and a connection area of a thin metal wire for connecting to a semiconductor element is provided between the groove portions. Further, the thickness of the fixed portion is the terminal land frame having a thickness of 10 to 20 [%] with respect to the thickness of the frame. The thickness of the fixed part is 25 to 50.
It is a terminal land frame of [μm].

Next, according to the method of manufacturing a terminal land frame of the present invention, the first step of forming etching resist films on the upper surface and the lower surface of the metal plate constituting the frame, respectively, and on the upper surface of the metal plate. A second step of forming an opening by removing at least a portion of the formed etching resist film other than a portion where a die pad portion and a land portion are to be formed, and etching from the upper surface of the metal plate, The metal plate portion exposed from the opening is thinly processed to form a fixed portion as a bottom portion, and a third step of forming a die pad portion and a land portion in a non-etched region, and an etching resist film on the metal plate are removed. An area of the thin fixing portion integrally provided in the area of the metal plate forming the frame, and a portion of the fixing portion in the area of the fixing portion. A die pad portion for mounting a semiconductor element having the same thickness as the frame frame provided in, and in the area of the fixed portion, is provided integrally provided around the die pad portion, and the frame frame. It is a method of manufacturing a terminal land frame including a fourth step of forming a terminal land frame including a plurality of lands having the same thickness.

Further, the first step of forming etching resist films on the upper surface and the lower surface of the metal plate constituting the frame, respectively, and at least the post for the etching resist film formed on the upper surface of the metal plate. Second step of forming an opening by removing the etching resist film other than the portion where a portion and a land are to be formed, and thinning the metal plate portion exposed from the opening by etching from the upper surface of the metal plate And forming a fixed portion as a bottom portion and forming a post portion and a land portion in an unetched region, and removing the etching resist film of the metal plate to form a frame frame in the region of the metal plate. Area of the thin fixed portion integrally provided in the frame, and a semi-conductor having the same thickness as the frame frame integrally provided in the area of the fixed portion. A terminal land composed of a post portion for mounting an element and a plurality of land portions integrally provided around the post portion in the area of the fixed portion and having a thickness equal to that of the frame frame. It is a method of manufacturing a terminal land frame including a fourth step of forming a frame.

The first step of forming an etching resist film on each of the upper surface and the lower surface of the metal plate constituting the frame, and at least the die pad for the etching resist film formed on the upper surface of the metal plate. Second step of forming an opening by removing the etching resist film other than the portion where a portion and a land are to be formed, and thinning the metal plate portion exposed from the opening by etching from the upper surface of the metal plate Forming a fixed part as a bottom part and forming a die pad part and a land part in a region which is not etched, and after removing the etching resist film on the upper surface of the metal plate, a new etching resist film is formed. Then, the newly formed etching resist film in the portion where the groove is to be formed on the upper surface of the land is removed to form an opening. A fourth step of forming a groove, and a fifth step of etching from the upper surface of the metal plate to process the metal plate portion exposed from the opening to form a groove on the upper surface of the land portion. The etching resist film is removed, and an area of the thin fixing portion integrally provided in the area of the metal plate forming the frame and an equivalent frame frame integrally provided in the area of the fixing portion. A die pad portion for mounting a semiconductor element having a thickness, and in a region of the fixing portion, is integrally provided and arranged around the die pad portion, has a thickness equal to that of the frame frame, and has a groove portion on the upper surface. It is a method of manufacturing a terminal land frame, which includes a sixth step of forming a terminal land frame including a plurality of land portions that are provided.

Specifically, in the third step, the step of etching from the upper surface of the metal plate to thinly process the metal plate portion exposed from the opening to form the fixed portion as the bottom portion,
The thickness of the fixed portion is set to 10 to 20 [%] with respect to the thickness of the metal plate by etching.

In the third step of etching the upper surface of the metal plate to thinly process the metal plate portion exposed from the opening to form the fixed portion as the bottom portion, the thickness of the fixed portion is set to 25 by etching. ˜50 [μm].

The resin-encapsulated semiconductor device of the present invention has a connecting portion within the area of the frame frame, the connecting portion having the same thickness as the frame frame, and a connecting portion within the area of the connecting portion and less than the thickness of the connecting portion. A fixing portion that is extremely thinly processed to form the bottom portion, a semiconductor device mounting die pad portion formed in the central region of the fixing portion, and a signal connecting lead portion arranged around the die pad portion. When the semiconductor device is configured, a resin-sealed semiconductor device having an exposed surface and a terminal land frame including a land portion that serves as an external terminal is a die pad portion, and the die pad portion is formed on the die pad portion. A semiconductor element bonded by an adhesive, a land portion electrically connected to an electrode of the semiconductor element by a fine metal wire, the semiconductor element, the fine metal wire, the die pad portion, and the land portion Some more becomes sealed sealing resin, the land portion, the bottom surface protrudes by the thickness of the fixing portion of the terminal land frame from the surface of the sealing resin on the upper surface of the land portion Has multiple grooves
The metal thin film is provided and connected to the electrode of the semiconductor element.
A line is connected between the groove on the upper surface of the land and the groove.
It is a resin-encapsulated semiconductor device. Also, the frame
Within the area of the frame and the same thickness as that of the frame.
The thickness of the connecting portion is within the connecting portion and the area of the connecting portion.
The fixing part that is processed to be extremely thin and constitutes the bottom part, and the fixing
For mounting semiconductor elements formed in the central area of the
The pad section and its die pad section are placed around it.
A lead portion for signal connection, which constitutes a semiconductor device.
In that case, the exposed surface is the land that will be the external terminal.
Resin-sealed half composed of terminal land frame
A conductor device comprising a die pad portion and the die pad portion
A semiconductor element bonded on top with an adhesive;
Lands electrically connected to the device electrodes by thin metal wires
Section, the semiconductor element, the thin metal wire, and the die pad
Part, and the sealing resin that seals part of the land part
The bottom surface of the land portion is from the surface of the sealing resin.
Projected by the thickness of the fixed part of the terminal land frame
The land portion has a cross-sectional shape.
It has a step.

In addition, a bottom portion is formed by forming a connecting portion having the same thickness as the thickness of the frame frame in the area of the frame frame, and being processed to be much thinner than the thickness of the connecting portion in the area of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a signal connection lead portion arranged in a plurality of rows around the die pad portion, When a semiconductor device is configured, the exposed surface is a resin-sealed semiconductor device composed of a terminal land frame consisting of an area-arranged land portion serving as an external terminal, and a die pad portion and a die pad portion on the die pad portion. A semiconductor element bonded by an adhesive, a plurality of land portions electrically connected to the semiconductor element by a thin metal wire, the semiconductor element, the thin metal wire, the die pad portion, the land Of the sealing resin, the bottom surface of the land portion protruding from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame is provided. A plurality of rows are arranged on the surface to be arranged in an area , and a plurality of grooves are formed on the upper surface of the land portion.
Provided with a portion, the gold connected to the electrode of the semiconductor element
The metal thin wire is provided between the groove and the groove on the upper surface of the land.
The resin-sealed semiconductor device is connected .

[0033]

[0034]

According to the method of manufacturing the resin-sealed semiconductor device of the present invention, the connecting portion within the region of the frame frame and having the same thickness as the thickness of the frame frame, and within the region of the connecting portion, the connecting portion A fixing part that is processed to be much thinner than the thickness and forms the bottom part, a semiconductor device mounting die pad part formed in the central region of the fixing part, and signal connections arranged around the die pad part When forming a semiconductor device, which is a lead portion for a semiconductor device, a step of preparing a terminal land frame having a land portion whose exposed surface becomes an external terminal, and a semiconductor element bonded to the die pad portion via an adhesive agent And a step of connecting the electrode of the semiconductor element and the land portion with a thin metal wire, the terminal device including regions of the semiconductor element, the die pad portion, the thin metal wire, and the land portion. A step of sealing the upper surface of the terminal frame with a sealing resin, an interface between the fixing portion and the die pad portion of the terminal land frame, an interface between the fixing portion and the land portion, the fixing portion and the connecting portion. of the breaking force is applied to the interface, the terminal land frame
The terminal land frame and the portion sealed by the sealing resin are separated by a peel-off means for peeling the frame itself, and the bottom of the land portion is fixed to the terminal land frame from the surface of the sealing resin. And a step of obtaining a resin-encapsulated semiconductor device that is provided so as to project by the thickness of the portion. Also, within the frame area,
The connecting part with the same thickness as the frame frame,
Is processed to be much thinner than the thickness of the connecting part, and the bottom part is
Fixed part and the semi-conductor formed in the central area of the fixed part
The die pad for mounting body elements and the die pad
Is the lead portion for signal connection arranged around it,
When a semiconductor device is constructed, its exposed surface does not serve as an external terminal.
A terminal land frame consisting of a land part
And the semi-conducting process on the die pad part with an adhesive.
The step of adhering the body element, the electrode of the semiconductor element and the
A step of connecting the land portion with a thin metal wire;
Of the child, the die pad portion, the thin metal wire, and the land portion
Sealing the upper surface of the terminal land frame including the area
The process of sealing with resin and the terminal land frame
Interface between the fixed part and the die pad part
The interface between the fixed portion and the land portion, the fixed portion, and the connecting portion
Applying a breaking force to the interface with
Fixed the frame itself, the die pad and the
Apply thrust force to the land and seal with sealing resin
By pushing up the part that has been
The frame and the part sealed with the sealing resin.
Separately, the bottom surface of the land portion is the surface of the sealing resin.
From the thickness of the fixed part of the terminal land frame
A process for obtaining a resin-sealed semiconductor device that is provided so as to project.
A method of manufacturing a resin-encapsulated semiconductor device comprising:

[0036]

[0037]

With the above structure, the terminal land frame of the present invention is suitable for a resin-sealed semiconductor device having high mounting reliability and high productivity.

That is, since the fixing portion of the terminal land frame itself is composed of a thin portion that is thin enough to be separated from the land portion and the die pad portion, it is easily broken at the connection interface between them and the semiconductor element is mounted. After the resin-sealed semiconductor device is configured, the frame itself and the resin-sealed semiconductor device can be easily separated. Therefore, the terminal land frame has improved productivity.

When a resin-sealed semiconductor device is constructed using the terminal land frame of the present invention, and the frame itself and the resin-sealed semiconductor device are separated, the die pad portion and the land portion are provided with a groove portion and a step portion. Since the adhesiveness with the encapsulating resin is strengthened by having the above-mentioned configuration, the frame and the resin-encapsulated semiconductor device can be separated in a state where they remain in the encapsulating resin with high reliability. In the manufacturing process after the stop, the manufacturing cost can be reduced by simplifying the process.

Further, in the resin-sealed semiconductor device using the terminal land frame of the present invention, the land portion is arranged as an external terminal on the bottom surface of the sealing resin, and the land portion projects from the sealing resin surface. Therefore, it has a structure that secures a standoff when mounted on a substrate. The protrusion of the land portion, that is, the height of the standoff, is formed by itself, and the thickness of the fixed portion of the terminal land frame directly constitutes the step,
It is what is projected. That is, the upper surface of the terminal land frame is resin-sealed, and the connection interface between the fixed part of the frame and the die pad part or land part is broken to separate the frame. Is what you can get.

[0042]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a resin-sealed semiconductor device and a method of manufacturing the same according to the present invention will be described below with reference to the drawings.

First, an embodiment of the terminal land frame which constitutes the resin-sealed semiconductor device of this embodiment will be described. FIG. 1 is a plan view showing a terminal land frame of this embodiment. FIG. 2 is a cross-sectional view showing the terminal land frame of this embodiment, and shows a cross section taken along the line AA1 in FIG.

The terminal land frame of this embodiment includes a frame frame 12, a connecting portion 13 in the area of the frame frame 12 and having the same thickness as the frame frame 12, and a connecting portion 1.
The fixing portion 14 which is processed in the region of 3 and is extremely thinner than the thickness of the connecting portion 13, and which constitutes the bottom surface portion, and the fixing portion 14.
A rectangular die pad portion 15 for mounting a semiconductor element formed in the central region of the semiconductor device and a signal connection lead portion arranged around the die pad portion 15 and surrounding the die pad portion 15. When a semiconductor device is constructed, The exposed surface is composed of a land portion 16 serving as an external terminal. The land portion 16 is a portion that is electrically connected to the mounted semiconductor element,
Normally, a semiconductor element and a land portion 1 mounted by a thin metal wire
And 6 are connected. Also, the thin fixing portion 14
Can be peeled off after resin sealing by peeling or the like. The semiconductor element is mounted on the terminal land frame of the present embodiment, and the fixing portion 14 is fixed after electrical connection and resin sealing. By removing the land 1
The resin-sealed semiconductor device in which the back surface of 6 is exposed to form an external terminal can be configured. The die pad 1
5 is smaller than the semiconductor element to be mounted, and when the resin-sealed semiconductor device is configured, the sealing resin wraps around the back surface of the semiconductor element, so that the reliability can be improved. The die pad portion 15 has a rectangular shape in the present embodiment, but may have a circular shape or a divided shape.

The basic characteristic is that the fixing portion 14 is thinly processed.
Since the die pad portion 15 and the land portion 16 are formed on the top of the die pad, it is possible to realize a frame with good productivity and easy connection of thin metal wires during wire bonding. The fixing portion 14 of the terminal land frame according to the present embodiment plays a role as a mask for preventing the sealing resin from wrapping around around the lower surface side of the die pad portion 15 and the rear surface side of the land portion 16 serving as an external terminal during resin sealing. Therefore, the presence of the fixing portion 14 can prevent the resin burr from being formed on the lower surface of the die pad portion 15 and the back surface of the land portion 16.

The fixing portion 14 can be reliably formed at a low cost by etching a thin metal plate serving as a frame material.

Further, by separating the fixing portion 14 from the sealing resin after resin sealing, the lower surface of the land portion 16 constitutes an external terminal, and the lower surface side of the die pad portion 15 is the same as the thickness of the fixing portion 14. Standoff is secured. Therefore, it is possible to realize a terminal land frame suitable for a resin-sealed semiconductor device in which the bottom surface of the electrode is exposed and which has high mounting reliability.
Further, the die pad portion 15 is formed by the fixing portion 14 made of the same material,
The structure is such that the land portion 16 is connected, and the upper surfaces of the frame frame 12, the coupling portion 13, the die pad portion 15, and the land portion 16 are on the same plane, which is an inexpensive and highly productive terminal land frame.

The frame frame 12 is provided with a stress relaxation slit 17 for preventing expansion due to heat to improve the production efficiency. Especially, regarding the arrangement, it is effective to dispose at the intersection of the connecting portions 13. With the arrangement of the slits 17, when the semiconductor device is configured, the stress of the sealing resin after resin sealing can be relieved and the warp of the frame itself can be prevented, so that the quality of the semiconductor device is improved and Since the stress applied to the mounted semiconductor element can be reduced, the electrical characteristics can be stabilized.

In this embodiment, the frame 12 of the terminal land frame is 250 [μm], and the fixing portion 1
The thickness of 4 is about 50 [μ
m] to 25 [μm], preferably 30 [μm], and the total frame thickness, that is, 1 of the thickness of the connecting portion 13.
The thickness is about 0 to 20 [%], preferably 15 [%]. The thickness dimension of the fixing portion 14 makes it possible to stably secure the standoff height as an external terminal when the semiconductor device is constructed. This fixed part 14
It is necessary to set a thickness such that the die pad portion 15 and the land portion 16 are peeled off by peeling off the fixing portion 14 after the resin is sealed and a force is not applied such that the die pad portion 15 and the land portion 16 fall from the sealing resin. Only the fixing portion 14 needs to be thick enough to be peeled off and removed from the sealing resin. As a thickness therefor, the thickness is processed as thin as possible, and is set to about 10 to 20% of the total frame thickness, that is, the thickness of the connecting portion 13, preferably 15%.

In the sealing die used for resin sealing, one of the dies does not come into contact with the sealing resin due to the function of the fixing portion 14, so that in addition to preventing the occurrence of resin burrs. Since the extrusion pin for releasing from the mold after resin sealing and the quenching for preventing the mold deformation from the sealing resin are not required, the mold structure can be simplified.

With this structure, since the die pad portion 15 and the land portion 16 are formed on the fixed portion 14, the suspension lead portion for holding the die pad portion such as the conventional lead frame does not extend to the peripheral portion. This makes it possible to improve the degree of freedom in land arrangement, secure the land pitch, and increase the number of pins. Furthermore, the terminal land frame of this embodiment is
This is a configuration in which a tie bar for stopping the outflow of the sealing resin is not provided although the resin is sealed in the configuration of the semiconductor device.

The terminal land frame of this embodiment has a plurality of patterns on the left and right, as shown in FIG.
It is an upper and lower continuous array.

The terminal land frame in the present embodiment is a copper (Cu) material frame with a nickel (Ni) layer as a base plating, a palladium (Pd) layer thereon and a thin gold ( It is a three-layer metal-plated frame with each Au) layer plated.
However, other than copper (Cu) material, 42 alloy material and the like can be used, and nickel (Ni), palladium (P
Noble metal other than d) and gold (Au) may be plated, and further, it is not always necessary to perform three-layer plating.

Next, a method of manufacturing the terminal land frame of this embodiment will be described with reference to the drawings. 3 to 6 are cross-sectional views showing the method of manufacturing the terminal land frame of the present embodiment in the order of steps.

First, as shown in FIG. 3, as a first step, an etching resist film 19 is formed on each of the upper surface and the lower surface of a metal plate 18 made of a copper material or the like which constitutes a frame.
To form etching resist films 19a and 19b, respectively. The etching resist film 19a is formed on the portions where the connecting portion, the die pad portion and the land portion are to be formed. The etching resist film 19b is formed for the purpose of protecting the back surface side of the metal plate 18.

Next, as shown in FIG. 4, in a second step, predetermined regions of the etching resist films 19a and 19b are removed to form openings 20a and 20b. In this step, a so-called non-etching area mask is formed.

Next, as shown in FIG. 5, in a third step, the metal plate 18 is etched from one side to form the opening 20.
By processing the portions a and 20b to be thin, the fixing portion 14 is formed, and the connecting portion 13, the die pad portion 15 and the land portion 16 are formed in the non-etched region.

Finally, as shown in FIG. 6, as a fourth step, the etching resist film is removed, and the bottom portion is the thin fixing portion 14, and the die pad portion 15 and the land portion 16 are provided in the surface thereof. Can form a terminal land frame. After this step, plating is usually performed by a plating method. As the plating, a Ni layer, a Pd layer, and an Au layer are laminated to form a three-layer laminated plating.

In practice, the cross-sectional shape processed by etching has an undercut that penetrates into the inside of the connecting portion 13, the die pad portion 15, the land portion 16, and the upper portions of the respective portions as they come closer to the fixing portion 14. Since a phenomenon, that is, a phenomenon in which the cross-sectional shape is an inverse taper occurs, the die pad portion 15 and the land portion 16 are configured to have a strong bonding force with the sealing resin when the resin is filled in the resin sealing step. Will have. However, in such a configuration, there is a possibility that the resin interface with the connecting portion 13 may be difficult to separate by peeling after the resin is sealed, and as a countermeasure against this, the connecting portion 13 may be easily separated.
Method for lowering the upper surface of
There is a method in which an opening of an etching resist is provided in the upper portion and an etching process is added to the upper surface and the lower surface so that the upper surface and the lower surface are substantially perpendicular to each other, which facilitates separation of the frame after resin sealing.

Next, a resin-sealed semiconductor device using the terminal land frame of this embodiment will be described with reference to the drawings.

FIG. 7 is a view showing the resin-sealed semiconductor device of this embodiment, and FIG. 7A is a perspective view of the upper surface showing the resin-sealed semiconductor device of this embodiment. 7B is a perspective view of the lower surface thereof, and FIG. 7C is a perspective view of FIG.
It is sectional drawing at the time of cutting | disconnecting the area | region containing a land part and a die pad part as a cross section of B-B1 place of (b).

The resin-encapsulated semiconductor device of this embodiment has a connecting portion in the region of the frame frame, the connecting portion having the same thickness as the thickness of the frame frame, and a connecting portion in the region of the connecting portion, and Is also processed extremely thin, and the fixed part that constitutes the bottom part,
The semiconductor device mounting die pad portion formed in the central region of the fixed portion, and the signal connection lead portion arranged around the die pad portion around the die pad portion. When the semiconductor device is configured, its exposed surface Is a resin-sealed semiconductor device in which an electrode bottom surface is exposed and which is composed of a terminal land frame composed of a land portion which becomes an external terminal, and the die pad portion 2
1, a semiconductor element 23 bonded to the die pad portion 21 with an adhesive 22, a land portion 25 electrically connected to the semiconductor element 23 by a metal thin wire 24, the semiconductor element 23, a metal thin wire 24, and Die pad portion 21,
It is composed of a sealing resin 26 that seals a part of the land portion 25.

In the resin-encapsulated semiconductor device of this embodiment, the bottom surface of the land portion 25 is projected and exposed from the surface of the encapsulation resin 26, and the protrusion amount is an amount that secures the standoff. The terminal land frame used for constructing this resin-sealed semiconductor device projects by the thickness of the fixing portion. Also, this land portion 25
The projecting bottom surface portion which secures the standoff of the above constitutes the external terminal 27 when the board is mounted. With this configuration, the external terminals can be efficiently arranged on the bottom surface, and the resin-sealed semiconductor device can be miniaturized.

Furthermore, in the resin-sealed semiconductor device of this embodiment, the external terminal 27 and the die pad portion 21 protrude from the surface of the sealing resin 26, that is, the lower surface of the sealing resin 26, and the standoff height is stable. Because it is secured in advance,
When the external terminal 27 and the die pad portion 21 are bonded to the electrodes of the mounting board when mounting on the mounting board, the external terminal 2
7 can be used as an external electrode as it is, and it is not necessary to attach a solder ball or the like to the external terminal 27 for mounting on the mounting substrate, which is advantageous in terms of manufacturing steps and manufacturing cost.

Further, as in the present embodiment, the die pad portion 2
In the resin-encapsulated semiconductor device having No. 1, the heat radiation characteristics are improved by connecting the portion exposed from the resin bottom surface to the mounting board by soldering, and by soldering to the mounting board, an external terminal is formed. The mechanical and thermal stresses applied to 27 can be dispersed, and the connection reliability is improved.

Next, a method of manufacturing the resin-encapsulated semiconductor device of this embodiment will be described with reference to the drawings.

8 to 13 are sectional views showing a method of manufacturing the resin-sealed semiconductor device of this embodiment, which are shown in the order of respective steps.

First, as shown in FIG. 8, in the region of the frame frame, the connecting portion 13 having the same thickness as the thickness of the frame frame.
And the fixing portion 14 that is processed to be extremely thinner than the thickness of the connecting portion 13 in the region of the connecting portion 13 and forms the bottom surface portion.
A die pad portion 15 for mounting a semiconductor element formed in a central region of the fixed portion 14, and a signal connection lead portion arranged around the die pad portion 15;
When a semiconductor device is constructed, a terminal land frame 28 having an exposed surface and a land portion 16 serving as an external terminal is prepared.

Next, as shown in FIG. 9, a semiconductor element 23 is bonded onto the die pad portion 15 of the terminal land frame 28 via a conductive adhesive 22 such as silver paste.
Since the die pad portion 15 is smaller than the semiconductor element 23 to be joined here, a gap is formed between the back surface of the semiconductor element 23 and the terminal land frame 28.

Next, as shown in FIG. 10, the die pad portion 1
The electrode pad (not shown) of the semiconductor element 23 bonded to the upper surface 5 and the land portion 16 are electrically connected by the fine metal wire 24.

Next, as shown in FIG. 11, the upper surface region of the terminal land frame 28, that is, the region between the connecting portions 13 is resin-sealed with the sealing resin 26, and the semiconductor element 23,
The outer circumference of the thin metal wire 24, the die pad portion 15, and the land portion 16 is sealed. In this case, due to the existence of the terminal land frame 28, the sealing resin 26 does not wrap around to the back surface side thereof, and no resin burr is generated on the back surface of the frame.

Next, as shown in FIG. 12, the semiconductor element 23 portion sealed with the sealing resin is separated from the terminal land frame. As a method of separation, a method of peeling off the terminal land frame, so-called peel-off, can be used. Due to this peel-off, the die pad portion 15 and the land portion 16 are broken and separated at the interface from the fixed portion 14 of the terminal land frame, so that a resin-sealed semiconductor device can be obtained. That is, the die pad portion 15 and the land portion 16 are broken at the connection interface of the fixed portion 14, and the thickness of the fixed portion 14 is 25 to 50 [μ.
m], preferably 30 [μm], which is extremely thin, the terminal land frame is fixed with the die pad portion 15 and the land portion 16 engaged with the sealing resin 26 left in the sealing resin 26 as they are. The part 14 and the connecting part 13 can be separated. The sealing resin 26 and the fixing portion 14
Since the interface with and has low adhesion, it can be separated.
Further, means for applying a breaking force to the interface between the fixed portion 14 and the die pad portion 15 of the terminal land frame, the interface between the fixed portion 14 and the land portion 16 and the interface between the fixed portion 14 and the connecting portion 13 is a terminal. Alternatively, the land frame itself may be fixed, and a pushing force may be applied to the die pad portion 15 and the land portion 16 to push up the portion sealed with the sealing resin.

Through the above steps, the die pad portion 21 as a semiconductor device, which is composed of the terminal land frame as shown in FIG. 13, and the semiconductor element 23 bonded to the die pad portion 21 by the adhesive 22 are formed.
And a land portion 25 as a semiconductor device electrically connected to the semiconductor element 23 by a metal thin wire 24, a seal that seals a part of the semiconductor element 23, the metal thin wire 24, the die pad portion 21, and the land portion 25. It is possible to obtain a resin-encapsulated semiconductor device in which the electrode bottom surface is exposed and which is composed of the stop resin 26. The protruding portion of the land portion 25 of the resin-encapsulated semiconductor device manufactured in this embodiment constitutes the external terminal 27 and secures the standoff in the connection with the mounting substrate.

Next, another embodiment of the terminal land frame of the present invention will be described. FIG. 14 is a plan view showing the terminal land frame of this embodiment. Figure 15
[FIG. 15] is a cross-sectional view showing the terminal land frame of the present embodiment, and shows a cross-section taken along the line C-C1 of FIG. 14.

The terminal land frame of this embodiment includes a frame frame 29, a connecting portion 30 in the region of the frame frame 29 and having the same thickness as the frame frame 29, and a connecting portion 3.
The fixing portion 31 which is processed in the region of 0 and is extremely thinner than the thickness of the connecting portion 30, and which constitutes the bottom surface portion, and the fixing portion 31.
A rectangular die pad portion 32 for mounting a semiconductor element formed in the central region of the semiconductor device and a signal connection lead portion arranged around the die pad portion 32, and when a semiconductor device is configured, The exposed surface is composed of lands 33a and 33b which serve as external terminals. Land part 3
The area 3a and the land portion 33b are arranged around the die pad portion 32. In FIG. 14, the outer arrangement constitutes the land portion 33a and the inner arrangement constitutes the land portion 33b. ing. And land part 33
Reference numerals a and 33b are parts that are electrically connected to the mounted semiconductor element, and normally, the mounted semiconductor element and the land portions 33a and 33b are connected by a metal thin wire. Further, the thin fixing portion 31 can be peeled off by peeling off after resin sealing, and the semiconductor element is mounted on the terminal land frame of the present embodiment.
By removing the fixing portion 31 after electrical connection and resin sealing, a resin-sealed semiconductor device in which the back surfaces of the land portions 33a and 33b are exposed at the bottom surface to form external terminals can be constructed. The die pad 32 is smaller than the semiconductor element to be mounted, and when the resin-sealed semiconductor device is configured, the sealing resin wraps around the back surface of the semiconductor element to improve reliability. ing. The die pad portion 32 has a rectangular shape in the present embodiment, but may have a circular shape or a divided shape.

The frame frame 29 is provided with slits 34 for stress relaxation for preventing expansion due to heat so as to improve the production efficiency. Especially, regarding the arrangement, it is effective to place the connection portion 30 at the intersection. With the arrangement of the slits 34, when the semiconductor device is configured, the stress of the sealing resin after resin sealing can be relieved and the warp of the frame itself can be prevented, so that the quality of the semiconductor device is improved and Since the stress applied to the mounted semiconductor element can be reduced, the electrical characteristics can be stabilized.

In this embodiment, the frame 29 of the terminal land frame is 250 [μm], and the fixing portion 3
The thickness of 1 is approximately 50 [μ
m] to 25 [μm], and the thickness of the entire frame, that is, about 10 to 20 [%] of the thickness of the connecting portion 30, preferably 15 [%]. And the fixed part 31
By the thickness dimension of, the standoff height as an external terminal when the semiconductor device is configured can be stably ensured. The thickness of the fixing portion 31 is set such that the die pad portion 32 and the land portions 33a and 33b are peeled off and dropped from the sealing resin by peeling off the fixing portion 31 after resin sealing. Is necessary
Only the fixing portion 31 needs to be thick enough to be peeled off and removed from the sealing resin. As a thickness for that purpose, the thickness of the entire frame, that is, 1 of the thickness of the connecting portion 30 is processed as thin as possible.
The thickness is about 0 to 20 [%], preferably 15 [%].

Further, the terminal land frame of this embodiment has a plurality of patterns arranged in a left-right and up-down continuous array as shown in FIG.

As described above, the terminal land frame of this embodiment is different from the terminal land frame structure shown in FIGS. 1 and 2 in that the land portions are arranged in the area and the number of pins of the semiconductor element to be mounted is set. If there are many
A land grid array (L
It is a terminal land frame that can be configured as a GA. Regarding the arrangement of the land portion 33a and the land portion 33b, a regular lattice arrangement, a staggered arrangement, etc.
It can be appropriately set depending on the number of electrode pads of the semiconductor element to be mounted, the arrangement of electrode pads, and the interval. Further, in the present embodiment, the double arrangement of the outside and the inside is taken as an example,
Depending on the number of electrode pads of the semiconductor element to be mounted, the arrangement of the electrode pads, and the spacing, it can be set appropriately as triple or quadruple, and the size of the land portion, the spacing, the shape of the die pad portion, the size, etc. can also be set appropriately. is there. Furthermore, by reducing the surface area of the lands 33b from the land portion 33a, the number of external terminals arranged in a grid pattern can be increased, and the number of terminals can be increased.

Next, a method of manufacturing the terminal land frame of this embodiment will be described with reference to the drawings. 16 to 19 are sectional views showing the method of manufacturing the terminal land frame of the present embodiment in the order of steps.

First, as shown in FIG. 16, in a first step, an etching resist film 36 is formed on each of the upper surface and the lower surface of a metal plate 35 made of a copper material or the like which constitutes a frame.
And etching resist films 36a and 36b are formed. The etching resist film 36a is formed on the portions where the connecting portion, the die pad portion and the land portion are to be formed. The etching resist film 36b is formed for the purpose of protecting the back surface side of the metal plate 35.

Next, as shown in FIG. 17, as a second step, predetermined regions of the etching resist films 36a and 36b are removed to form openings 37a, 37b and 37c. In this step, a so-called non-etching area mask is formed.

Next, as shown in FIG. 18, in a third step, the metal plate 35 is etched from one side to form an opening 37.
By processing the a, 37b, and 37c portions to be thin, the fixing portion 31 is formed, and the connecting portion 30, the die pad portion 32, and the land portions 33a and 33b are formed in the non-etched regions.

Finally, as shown in FIG. 19, as a fourth step, the etching resist film is removed, and the bottom portion is the thin fixing portion 31, and the die pad portion 32 and the land portions 33a, 33b are formed in the surface thereof. It is possible to form the terminal land frame which has. After this step, plating is usually performed by a plating method.
Layers and Au layers are laminated to form a three-layer laminated plating.

Next, a resin-sealed semiconductor device using the terminal land frame of this embodiment will be described with reference to the drawings.

20 is a view showing the resin-sealed semiconductor device of this embodiment, and FIG. 20A is a perspective view of the upper surface showing the resin-sealed semiconductor device of this embodiment.
20B is a perspective view of the lower surface thereof, and FIG.
It is sectional drawing at the time of cutting | disconnecting the area | region containing a land part and a die pad part as a section of D-D1 place of 0 (a), (b).

The resin-encapsulated semiconductor device of this embodiment has a connecting portion within the region of the frame frame, the connecting portion having the same thickness as that of the frame frame, and a connecting portion within the region of the connecting portion, which is smaller than the thickness of the connecting portion. Is also processed extremely thin, and the fixed part that constitutes the bottom part,
The semiconductor device mounting die pad portion formed in the central region of the fixed portion, and the signal connection lead portion arranged around the die pad portion around the die pad portion. When the semiconductor device is configured, its exposed surface Is a resin-sealed semiconductor device in which the electrode bottom surface is exposed and which is composed of a terminal land frame constituted by land portions arranged in areas serving as external terminals, and a die pad portion 38 and an adhesive 3 on the die pad portion 38.
9. The semiconductor element 40 joined by 9 and the land portions 42a and 42b electrically connected to the semiconductor element 40 by the metal thin wire 41, the semiconductor element 40, the metal thin wire 41, the die pad portion 38, and the land portions 42a and 42b. And a sealing resin 43 that seals a part of the above.

In the resin-encapsulated semiconductor device of this embodiment, the bottom portions of the land portions 42a and 42b arranged in the area are projected and exposed from the surface of the encapsulating resin 43, and the protrusion amount ensures the standoff. The amount of the protrusion is the same as that of the fixed portion of the terminal land frame used to form this resin-sealed semiconductor device.
In addition, the projected bottom surface portion of the land portions 42a and 42b, which secures the standoff, is provided with an external terminal 44 when the board is mounted.
a and 44b. With this configuration, the resin-encapsulated semiconductor device can be miniaturized.

Further, in the resin-sealed semiconductor device of this embodiment, the external terminals 44a and 44b and the die pad portion 3 are used.
8 protrudes from the surface of the sealing resin 43, that is, the lower surface of the sealing resin 43, and a stable standoff height is secured in advance, so that the external terminals 44a, 4 when mounting on the mounting substrate.
The external terminals 44a and 44b can be used as the external electrodes as they are in joining the electrodes 4b and the die pad portion 38 to the electrodes of the mounting board, and solder balls or the like are attached to the external terminals 44a and 44b for mounting on the mounting board. It is not necessary and is advantageous in terms of manufacturing man-hours and manufacturing costs.

Further, as in the present embodiment, the die pad portion 3
In the resin-encapsulated semiconductor device having No. 8, the heat radiation characteristics are improved by connecting the portion exposed from the resin bottom surface to the mounting board by soldering or the like, and by soldering to the mounting board, the external terminal The mechanical and thermal stress applied to 44a and 44b can be dispersed, and the connection reliability is improved.

Next, a method of manufacturing the resin-encapsulated semiconductor device of this embodiment will be described with reference to the drawings.

21 to 26 are cross-sectional views showing a method of manufacturing the resin-sealed semiconductor device of this embodiment, which are shown in the order of steps.

First, as shown in FIG. 21, the connecting portion 3 in the region of the frame and having the same thickness as the thickness of the frame.
0, and a fixing portion 31 which is processed to be extremely thinner than the thickness of the connecting portion 30 in the region of the connecting portion 30 and which constitutes the bottom surface portion.
A die pad portion 32 for mounting a semiconductor element formed in the central region of the fixed portion 31 and a signal connection lead portion arranged around the die pad portion 32,
When the semiconductor device is constructed, a terminal land frame 45 is prepared which is composed of land portions 33a and 33b whose exposed surfaces serve as external terminals.

Next, as shown in FIG. 22, the semiconductor element 40 is bonded onto the die pad portion 32 of the terminal land frame 45 via a conductive adhesive 39 such as silver paste. Here, the die pad portion 32 is joined to the semiconductor element 4
Since the size is smaller than 0, a gap is formed between the back surface of the semiconductor element 40 and the terminal land frame 45.

Next, as shown in FIG. 23, the die pad portion 3
The electrode pad (not shown) of the semiconductor element 40 bonded on the upper surface 2 and the lands 33a and 33b are electrically connected by the fine metal wire 41.

Next, as shown in FIG. 24, the upper surface region of the terminal land frame 45, that is, the region between the coupling portions 30 is resin-sealed with the sealing resin 43, and the semiconductor element 40,
Fine metal wire 41, die pad portion 32, land portion 33
The outer circumferences of a and 33b are sealed. In this case, due to the existence of the terminal land frame 45, the sealing resin 43 does not wrap around to the back surface side thereof, and no resin burr is generated on the back surface of the frame.

Next, as shown in FIG. 25, the semiconductor element 40 sealed with the sealing resin 43 from the terminal land frame.
Separate the parts. As a method of separation, a method of peeling off the terminal land frame, so-called peel-off, can be used. Due to this peel-off, the die pad portion 32, the land portion 33 from the terminal land frame
Since a and 33b are broken and separated, a resin-sealed semiconductor device can be obtained. That is, the die pad section 3
2. The land portions 33a and 33b are broken at the connection interface of the fixed portion 31, and the fixed portion 31 has a thickness of 25 to 50.
[Μm], preferably 30 [μm], which is extremely thin, the die pad portion 32 engaged with the sealing resin 43,
With the land portions 33a and 33b left in the sealing resin 43 as they are, the fixing portion 31 of the terminal land frame,
The connecting portion 30 can be separated. The sealing resin 4
Since the interface between 3 and the fixing part 31 has low adhesion, it can be separated.

Through the above steps, a die pad portion 38 as a semiconductor device, which is composed of a terminal land frame as shown in FIG. 26, and a semiconductor element 40 bonded to the die pad portion 38 by an adhesive 39 are formed.
And lands 42a and 42b as a semiconductor device electrically connected to the semiconductor element 40 and the thin metal wire 41.
And a semiconductor resin 40, a metal thin wire 41, a die pad portion 38, and an encapsulating resin 43 encapsulating a part of the lands 33a, 33b to obtain an electrode bottom exposed resin-encapsulated semiconductor device. You can The protruding portions of the land portions 33a and 33b of the resin-sealed semiconductor device manufactured in this embodiment constitute external terminals 44a and 44b, and ensure standoffs in bonding with the mounting substrate. is there.

Next, a method of manufacturing a resin-sealed semiconductor device using the terminal land frame as shown in FIGS. 27 and 28 will be described. FIG. 27 is a plan view showing the terminal land frame, and FIG. 28 is an E- of FIG.
It is sectional drawing of E1 location.

The terminal land frame shown in FIGS. 27 and 28 has the same structure as the terminal land frame shown in FIGS. 14 and 15, except that the connecting portion is not provided and the fixing portion 31 in the region of the frame 29 is provided. The die pad portion 32 and the land portions 33a and 33b are continuously formed on the upper portion. When manufacturing a resin-sealed semiconductor device using the terminal land frame shown in FIGS. 27 and 28,
The upper surface of the terminal land frame is collectively resin-sealed in the mold, and then the sealing resin is cut by a cutter blade for each individual semiconductor element mounted on the die pad portion 32, so that a plurality of chips can be collectively packaged. A resin-sealed semiconductor device can be obtained.

29 and 30 are views showing a state in which the upper surface of the terminal land frame is collectively resin-sealed and a plurality of resin-sealed semiconductor devices are collectively obtained by cutting. 29 is a schematic perspective view and FIG. 30 is a schematic sectional view.

As shown in FIG. 29, a semiconductor element is mounted on the terminal land frame 46 as shown in FIG. 27, and after electrically connecting the land portion and the metal thin wire,
The upper surface region is sealed with the sealing resin 43, and the cutter blade 47
Thus, the sealing resin 43 on the cutting area line Re of each semiconductor element area is cut. As a result, as shown in FIG. 30, the sealing resin 43 in the regions of the individual semiconductor elements 48 on the terminal land frame 46 is cut and separated at the cutting region line Re, and thereafter the terminal land frame is peeled off. As a result, a plurality of resin-encapsulated semiconductor devices can be collectively obtained.

The feature of this embodiment is that the semiconductor device can be separated without cutting the lead frame by providing an efficient separating method by cutting the sealing resin portion, shortening the cutting time, and cutting blade wear. The product has a longer life and improves productivity.

Next, another embodiment of the terminal land frame of the present invention will be described. FIG. 31 is a plan view showing the terminal land frame of this embodiment. Figure 32
FIG. 32 is a cross-sectional view showing the terminal land frame of the present embodiment, and shows a cross-section taken along the line FF1 in FIG.

The terminal land frame of this embodiment includes a frame frame 49, a connecting portion 50 in the area of the frame frame 49 and having the same thickness as the thickness of the frame frame 49, and the connecting portion 5.
The fixing portion 51, which is formed in the region of 0 and is extremely thinner than the thickness of the connecting portion 50 and constitutes the bottom surface portion, and the fixing portion 51.
A rectangular post portion 52 for mounting a semiconductor element formed in the central region of the semiconductor device and a lead portion for signal connection arranged around the post portion 52, and when the semiconductor device is configured, Land portion 53 whose exposed surface serves as an external terminal
a and 53b. The land portion 53a and the land portion 53b are arranged in an area around the post portion 52. In FIG. 31, the outer arrangement constitutes the land portion 53a, and the inner arrangement thereof constitutes the land portion 53a.
b. The land portions 53a and 53b are
This is a part that is electrically connected to the mounted semiconductor element, and normally the mounted semiconductor element and the land portions 53a and 53b are connected by a thin metal wire. In addition, the thin fixing portion 51 is peeled off after resin sealing,
It can be peeled off, and after the semiconductor element is mounted on the terminal land frame of the present embodiment, and after the electrical connection and resin sealing, the fixing portion 51 is removed, the land portions 53a and 53b are formed on the bottom surface. It is possible to form a resin-sealed semiconductor device in which the back surface is exposed to form an external terminal. The post portion 52 is arranged in an area smaller than the semiconductor element to be mounted, and when the resin-sealed semiconductor device is configured, the sealing resin wraps around the back surface of the semiconductor element so that the reliability can be improved. is doing. The shape of the post portion 52 is also rectangular in this embodiment, but may be circular.

The frame frame 49 is provided with a stress relief slit 54 for preventing expansion due to heat so as to improve the production efficiency. Especially, regarding the arrangement, it is effective to arrange them at the intersections of the connecting portions 50. With the arrangement of the slits 54, when the semiconductor device is configured, the stress of the sealing resin after resin sealing can be relieved and the warp of the frame itself can be prevented, so that the quality of the semiconductor device is improved and Since the stress applied to the mounted semiconductor element can be reduced, the electrical characteristics can be stabilized.

As in the present embodiment, the portion on which the semiconductor element is mounted is the post portion 52, which is inferior in low thermal resistance, but suppresses the influence of moisture and is excellent in package crack resistance. The point is that the device can be configured.
Since the resin-sealed semiconductor device having the post portion 52 has a less exposed portion than the resin bottom surface and the bottom surface of the semiconductor element is covered with resin, the semiconductor device has high water resistance due to stress after mounting and is highly reliable. It has excellent properties. On the other hand, when the die pad portion is adopted as the portion on which the semiconductor element is mounted, it is necessary to adhere the mounting substrate, but on the other hand, the thermal resistance can be reduced.

The other constituent features of the terminal land frame are the same as those in the above-described embodiment, and therefore will be omitted.

Next, a method of manufacturing the terminal land frame of this embodiment will be described with reference to the drawings. 33 to 36 are cross-sectional views showing the method of manufacturing the terminal land frame of the present embodiment in the order of steps.

First, as shown in FIG. 33, as a first step, an etching resist film 56 is formed on each of the upper surface and the lower surface of a metal plate 55 made of a copper material or the like which constitutes a frame.
And etching resist films 56a and 56b are formed. The etching resist film 56a is formed on the portions where the connecting portion, the post portion and the land portion are to be formed. Etching resist film 56
About b, it forms in order to protect the back surface side of the metal plate 55.

Next, as shown in FIG. 34, in a second step, the predetermined regions of the etching resist films 56a and 56b are removed to form openings 57a, 57b, 57c, and 57c.
57d is formed. In this step, a so-called non-etching area mask is formed.

Next, as shown in FIG. 35, in a third step, the metal plate 55 is etched from one side to form an opening 57.
By fixing the thickness of the portions a, 57b, 57c, 57d, the fixing portion 51 is formed, and the connecting portion 50, the post portion 52, and the land portions 53a, 53b are formed in the non-etched regions.

Finally, as shown in FIG. 36, as a fourth step, the etching resist film is removed, and the bottom portion is the thin fixing portion 51, and the post portion 52 and the land portions 53a and 53b are formed in the surface thereof. It is possible to form the terminal land frame which has. After this step, plating is usually performed by a plating method, and the plating is performed by Ni layer, Pd layer, A
The u layer is laminated to form a three-layer laminated plating.

Next, a resin-sealed semiconductor device using the terminal land frame of this embodiment will be described with reference to the drawings.

FIG. 37 is a view showing the resin-sealed semiconductor device of this embodiment, and FIG. 37 (a) is a perspective view of the upper surface showing the resin-sealed semiconductor device of this embodiment.
FIG. 37B is a perspective view of the lower surface thereof, and FIG.
7 (a) and 7 (b) is a cross-sectional view in the case where a region including a land portion and a post portion is cut as a cross-section of G-G1 portion of 7 (a) and 7 (b).

The resin-encapsulated semiconductor device of this embodiment has a connecting portion within the region of the frame frame and having the same thickness as the thickness of the frame frame, and a connecting portion within the region of the connecting portion, which is smaller than the thickness of the connecting portion. Is also processed extremely thin, and the fixed part that constitutes the bottom part,
A post portion for mounting a semiconductor element, which is formed in the central region of the fixed portion, and a lead portion for signal connection, which is arranged around the post portion, around the post portion. When the semiconductor device is configured, its exposed surface Is a resin-sealed semiconductor device in which an electrode bottom surface is exposed and which is composed of a terminal land frame composed of land portions arranged as areas for external terminals. The post portion 58 is bonded to the post portion 58 with an adhesive 59. Semiconductor element 60, and lands 62a and 62b electrically connected to the semiconductor element 60 by a thin metal wire 61
And the semiconductor element 60, the thin metal wire 61, and the post portion 5
8 and a sealing resin 63 that seals a part of the land portions 62a and 62b.

In the resin-encapsulated semiconductor device of this embodiment, the bottom portions of the land portions 62a and 62b arranged in areas are projected and exposed from the surface of the encapsulating resin 63, and the protrusion amount ensures standoff. The amount of the protrusion is the same as that of the fixed portion of the terminal land frame used to form this resin-sealed semiconductor device.
Further, the projected bottom surface portion of the land portions 62a and 62b, which secures the standoff, is an external terminal 64 when mounted on the board.
a and 64b. With this configuration, the resin-encapsulated semiconductor device can be miniaturized.

Further, in the resin-encapsulated semiconductor device of this embodiment, the external terminals 64a, 64b and the post portion 58 project from the surface of the encapsulating resin 63, that is, the lower surface of the encapsulating resin 63, and the standoff height is stable. Is secured in advance, the external terminals 64a and 64b when mounting on the mounting board
Also, the external terminals 64a and 64b can be used as they are as external electrodes in the joining of the post portion 58 and the electrodes of the mounting board, and it is necessary to attach solder balls or the like to the external terminals 64a and 64b for mounting on the mounting board. Not,
It is advantageous in terms of manufacturing man-hours and manufacturing costs.

Since the resin-sealed semiconductor device of this embodiment has the post portion 58 and is different from the die pad portion, there is less exposed portion than the resin bottom surface, and the bottom surface of the semiconductor element is covered with resin. Therefore, the water resistance of the semiconductor device due to the stress after mounting is high and the reliability is excellent.

Next, a method of manufacturing the resin-encapsulated semiconductor device of this embodiment will be described with reference to the drawings.

38 to 43 are cross-sectional views showing the method of manufacturing the resin-sealed semiconductor device of this embodiment, which are shown in the order of respective steps.

First, as shown in FIG. 38, in the region of the frame frame, the connecting portion 5 having the same thickness as the frame frame.
0, and the fixing portion 51 that is processed in the region of the connecting portion 50 and is extremely thinner than the thickness of the connecting portion 50 to form the bottom surface portion.
And a post portion 52 for mounting a semiconductor element formed in a central region of the fixed portion 51, and a signal connection lead portion arranged around the post portion 52, when the semiconductor device is configured. Prepares a terminal land frame 65 having land portions 53a and 53b whose exposed surfaces serve as external terminals.

Next, as shown in FIG. 39, the semiconductor element 60 is bonded onto the post portion 52 of the terminal land frame 65 via a conductive adhesive 59 such as silver paste. Here, since the post portion 52 is smaller than the semiconductor element 60 to be joined, a gap is formed between the back surface of the semiconductor element 60 and the terminal land frame 65.

Next, as shown in FIG. 40, the electrode pad (not shown) of the semiconductor element 60 bonded on the post portion 52 and the land portions 53a and 53b are electrically connected by the fine metal wire 61.

Next, as shown in FIG. 41, the upper surface region of the terminal land frame 65, which is the region between the connecting portions 50, is resin-sealed with the sealing resin 63, and the semiconductor element 60,
Fine metal wire 61, post portion 52, land portions 53a, 5
The outer circumference of 3b is sealed. In this case, due to the existence of the terminal land frame 65, the sealing resin 63 does not wrap around to the back surface side thereof, and no resin burr is generated on the back surface of the frame.

Next, as shown in FIG. 42, the semiconductor element 60 sealed with the sealing resin 63 from the terminal land frame.
Separate the parts. As a method of separation, a method of peeling off the terminal land frame, so-called peel-off, can be used. By this peel-off, the post portion 52, the land portion 53a, the
Since 53b is broken and separated, a resin-sealed semiconductor device can be obtained. That is, the post portion 52 and the land portions 53a and 53b are broken at the connection interface of the fixed portion 51, and the thickness of the fixed portion 51 is 25 to 50 [μm],
Since it is extremely thin, preferably 30 [μm],
Post portion 52 and land portion 53 engaged with the sealing resin 63
With a and 53b left in the sealing resin 63 as they are,
The fixing portion 51 and the connecting portion 50 of the terminal land frame can be separated. The sealing resin 63 and the fixing portion 5
Since the interface with 1 has low adhesion, it can be separated.

Through the above steps, the post portion 58 as a semiconductor device, which is constituted by the terminal land frame as shown in FIG. 43, and the semiconductor element 60 bonded to the post portion 58 by the adhesive 59 are formed. And the land portions 62a and 62b as a semiconductor device electrically connected to the semiconductor element 60 by the metal thin wires 61, the semiconductor element 60, the metal thin wires 61, and the post portions 58 and a part of the land portions 62a and 62b. It is possible to obtain a resin-sealed semiconductor device in which the electrode bottom surface is exposed and which is composed of the sealed sealing resin 63. The protruding portions of the land portions 62a and 62b of the resin-sealed semiconductor device manufactured in this embodiment are
The external terminals 64a and 64b are configured to secure a standoff in the connection with the mounting board.

Next, a modification of the terminal land frame of this embodiment will be described with reference to the drawings.

44 to 52 are partial sectional views showing the terminal land frame of this embodiment. The terminal land frame in each drawing is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69.

First, as shown in FIG. 44, the terminal land frame of this embodiment comprises a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69. The land portion 68 has a groove portion on its upper surface. 70 is provided to enhance adhesion with the resin after resin sealing and after mounting
It has a function to reduce mechanical and thermal stress applied to the connected thin metal wires. The thin metal wires may be connected between the groove portions 70 or may be connected to the outside of the groove portions 70, but they serve to reduce the stress applied to the thin metal wires. An area to which the thin metal wire for connecting to the semiconductor element is connected is secured between the groove 70.

Next, as shown in FIG. 45, the terminal land frame of this embodiment comprises a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69, and the fixing portion 69 is peeled after sealing. In order to facilitate peeling, the groove portion 71 is processed around the lower surfaces of the land portion 68 and the die pad portion 67. For example, it is advisable to process the land portion 68 and the die pad portion 67 around the lower surface in a slit shape.
As a result, since the etching portion is plated, when solder is mounted on the printed circuit board, the adhesive force of the solder is improved, and the mounting reliability is also improved.

Next, as shown in FIG. 46, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69. The land portion 68 has a sectional structure. After the step portion 72 is etched, the plating process is performed. The stepped portion 72 is filled with resin by resin sealing in the sealing step. The resin filling portion 73 of the fixing portion 69 is filled with a resin such as polyimide to prevent the sealing resin from leaking from the bottom surface by resin sealing. The feature of this structure is that the function of plating at the time of mounting forms a solder fillet and improves the bonding force due to the anchor effect between the stepped portion 72 of the land portion 68 and the sealing resin. Then, it has an effect of relaxing stress on the thin metal wire and improving reliability of various mounting connections.

Next, as shown in FIG. 47, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69. The land portion 68 has a sectional structure of Steps 72 and 7 on both sides
4 is provided to facilitate the formation of a solder fillet by the function of plating and to improve the reliability of solder mounting connection. Similarly, the resin filling portion 73 of the fixing portion 69 is filled with a resin such as polyimide to prevent the sealing resin from leaking from the bottom surface by resin sealing. The feature of this configuration is that the bonding force between the land portion 68 and the sealing resin is dramatically improved, and the stress applied to the thin metal wire is reduced.

By combining the characteristic shapes of the land portion 68 shown in FIGS. 44 to 47, the shape of the land portion 68 suitable for the required mounting reliability can be selected.

Next, as shown in FIG. 48, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69. The stepped portions 72 and 74 are arranged, and further, the groove portion 70 is arranged on the upper surface of the land portion 68, which is a highly reliable shape. Similarly, the fixed portion 69
The resin filling portion 73 of is filled with a resin such as polyimide,
The resin sealing prevents the sealing resin from leaking from the bottom surface. It should be noted that the resin filling portion 73 on the lower surface of the step portion 72, 74
After the resin is molded, it is peeled off from the resin bottom surface together with the fixing portion 69, and the fixing portion 69 on the bottom surface of the land portion 68 is a portion which projects and becomes an external terminal.

Next, as shown in FIG. 49, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69. The step portions 72 and 74 are arranged, the groove portion 70 is arranged on the upper surface of the land portion 68, and the shape of the die pad portion 67 is such that the step portion 75 is arranged on at least a part of the bottom surface. This characteristic is that the bonding force of the die pad portion 67 with the sealing resin is dramatically improved, and the mounting failure caused by the moisture contained in the adhesive that connects the mounted semiconductor element and the die pad portion 67 is expanded at the time of mounting, and the die pad. It is possible to improve the resistance to moisture and the like that enters from the interface between the side surface of the portion 67 and the sealing resin. Further, after mounting, the resistance to various stresses applied to the mounting substrate and the die pad portion 67 is improved, and the reliability can be improved.

Next, as shown in FIG. 50, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69, and the upper surface of the land portion 68 is another die pad portion. It is configured to be lower than the height of the upper surfaces of 67 and the connecting portion 66. That is, the thickness of the land portion 68 is thinner than that of the die pad portion 67,
Moreover, it is configured to be thicker than the fixed portion 69.
This feature is that the semiconductor element mounted on the die pad portion 67 is larger and even if it protrudes above the land portion 68,
It is possible to secure a stable gap between the lower surface of the semiconductor element and the upper surface of the land portion 68, and to fill the sealing resin, and to provide a reliable small-sized multi-terminal bottom electrode exposed resin-sealed semiconductor device. It is possible to supply a lead frame suitable for.

Next, as shown in FIG. 51, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69, and the upper surface of the connecting portion 66 is another die pad portion. 67 and the height of the land portion 68 are lower than the height of the upper surfaces thereof. This feature is effective in facilitating separation of the resin-sealed semiconductor device from the terminal land frame after resin sealing. For example,
When the connecting portion 66 is thinly processed by etching, the connecting portion 6 closer to the fixing portion 69 than the upper surface called an undercut is formed.
In some cases, the phenomenon that 6 becomes thin occurs, making it difficult to separate the resin-sealed semiconductor device. This phenomenon has the effect of reducing the height of the connecting portion 66 to prevent the undercut phenomenon. In addition, the deformation of each component part of the terminal land in the process due to thermal expansion is reduced, and stable production is possible. Further, the same undercut phenomenon occurs in the land portion 68 and the die pad portion 67, but in this case, the effect is to improve the bonding force with the sealing resin.

It should be noted that although similar undercut phenomena occur in each of the drawings, a straight line is shown here for the sake of convenience.

Next, as shown in FIG. 52, the terminal land frame of this embodiment is composed of a connecting portion 66, a die pad portion 67, a land portion 68, and a fixing portion 69, and shows a structure in which a step portion and a groove portion are combined. ing. In the terminal land frame of this embodiment, the step portion 72 is arranged in the cross-sectional structure of the land portion 68, and the land portion 68 is further provided.
It has a highly reliable shape in which a groove 70 is provided on the upper surface of the. Similarly, the resin filling portion 73 of the fixing portion 69 is filled with a resin such as polyimide to prevent the sealing resin from leaking from the bottom surface by resin sealing. Further, in order to make it easy to peel off the fixed portion 69 by peeling after sealing, a groove portion 71 is processed around the lower surfaces of the land portion 68 and the die pad portion 67. In the present embodiment, the land portion 68
2 is an example in which the connecting portion 66 is low, that is, the connecting portion 66 is thin, that is, the connecting portion is substantially eliminated, and the lower surface of the connecting portion 66 is easy to separate. A groove portion 76 is arranged in the. This feature is that the connecting portion 66
Since it is thin and the grooves 76 facilitate separation, more semiconductor devices can be produced with the same lead frame. Further, the structure is suitable for a small-sized and inexpensive semiconductor device, and is suitable for a frame material of iron system having a small thermal expansion.

Next, as an example of a modification of the method of manufacturing the terminal land frame of the present embodiment, a die pad portion,
A method of manufacturing a terminal land frame having a groove portion and a step portion in the land portion will be described with reference to the drawings.

53 to 59 are sectional views showing the method of manufacturing the terminal land frame of this embodiment, which are shown in the order of steps.

First, as shown in FIG. 53, as a first step, an etching resist film 78 is formed on each of the upper surface and the lower surface of a metal plate 77 made of a copper material or the like which constitutes a frame.
Is applied to form etching resist films 78a and 78b.

Next, as shown in FIG. 54, as a second step, predetermined regions of the etching resist film 78a are removed to form openings 79a and 79b.

Next, as shown in FIG. 55, in a third step, the openings 79a and 79b of the metal plate are etched from one side to make at least the fixing portion 80 thin so that the land portion 81 and the die pad are formed. The part 82 and the connecting part 83 are formed.

Next, as shown in FIG. 56, as a fourth step, after removing the etching resist film up to the previous step, a third step is performed.
Etching resist films 84a and 84b are formed by newly applying the etching resist film 84 on the land portion 81, the die pad portion 82, and the upper surface and the lower surface of the metal plate 77 processed in the above step. Here, in order to form a groove on the upper surface of the land 81, the land 81
The opening 85 is provided in the etching resist film 84a on the upper surface, and the etching resist film 84 on the lower surface of the metal plate 77 is formed.
Also in b, an opening 85 is provided at a position where a step between the land portion 81 and the die pad portion 82 is formed.

Next, as shown in FIG. 57, in a fifth step, predetermined regions are etched from the upper and lower surfaces of the metal plate 77 to form groove portions 86 and step portions 87 in the land portion 81 and step portions in the die pad portion 82. 87 are formed respectively.

Next, as shown in FIG. 58, in a sixth step, the etching resist film on both surfaces of the metal plate 77 is removed to form the groove portion 86 and the step portion 87 in the land portion 81 and the step portion 87 in the die pad portion 82. Obtain each terminal land frame. Usually, after this step, plating is performed by a plating method, for example, Ni layer, Pd layer, Au
Layers are laminated, but not shown.

Next, as shown in FIG. 59, in a seventh step, the portion of the fixing portion 80 opened by etching is sealed with a resin to form a resin filling portion 88.
For example, a resin containing polyimide, polycarbonate or the like as a main component and having heat resistance is used, and the opened portion is sealed and filled with a thermosetting or ultraviolet curable resin. Since the resin filling portion 88 is to be peeled off together with the terminal land frame after the semiconductor element is mounted on the formed terminal land frame to form the resin-sealed semiconductor device, it is easily peeled off as a resin. If

Through the above steps, the land portion 81, the die pad portion 82 and the connecting portion 83 as shown in FIG. 59 are formed on the thin fixing portion 80, and the land portion 81 has the step portion 87 and the groove portion 86 on the upper surface. Thus, it is possible to obtain the terminal land frame in which the die pad portion 82 has the step portion 87, and the open fixing portions 80 are closed by the resin filling portion.

Next, a modification of the resin-sealed semiconductor device using the terminal land frame of this embodiment will be described with reference to the drawings.

60 to 63 are sectional views showing the resin-sealed semiconductor device of the present embodiment, and the sectional structure shows a portion including a region obtained by cutting the semiconductor element, the land portion, and the die pad portion as described above. ing.

First, in the resin-encapsulated semiconductor device of the embodiment shown in FIG. 60, a connecting portion within the region of the frame frame and having the same thickness as the thickness of the frame frame, and within the region of the connecting portion and connecting portion The fixing part that is processed to be extremely thinner than the thickness of the bottom part, the die pad part for mounting the semiconductor element formed in the central region of the fixing part, and the signal arranged around the die pad part. When the semiconductor device is a connecting lead part, the exposed surface of the electrode bottom surface exposed type resin-sealed semiconductor device is composed of a terminal land frame composed of an area-arranged land part that becomes an external terminal. There is a die pad portion 89, a semiconductor element 91 bonded to the die pad portion 89 with an adhesive 90, and a land portion 93a electrically connected to the semiconductor element 91 with a thin metal wire 92. And 93 b, the semiconductor device 91, the metal thin wire 92 and the die pad portion 89, the land portion 93a, 9
It is composed of a sealing resin 94 that seals a part of 3b.

In the present embodiment, the groove portion 95 is provided on the upper surface of the land portion 93 to enhance the adhesiveness with the sealing resin 94, and in addition to the connection portion of the metal thin wire 92. It has the function of relieving the stress. That is, in the connection of the fine metal wire 92 to the upper surfaces of the lands 93a and 93b, the connection location is the groove 95 and the groove 95.
With this structure, even if thermal stress is generated by the sealing resin 94, the groove portion 95 absorbs the stress, so that the stress application to the connecting portion of the thin metal wire 92 is reduced, It is possible to prevent a connection failure such as disconnection of the thin metal wire 92.

Next, in the resin-encapsulated semiconductor device of the form shown in FIG. 61, similarly, the die pad portion 89 and the semiconductor element 91 bonded to the die pad portion 89 with the adhesive 90 are used.
A semiconductor element 91, land portions 93a and 93b electrically connected to the semiconductor element 91 by a thin metal wire 92, and a semiconductor element 9
1, a fine metal wire 92, a die pad portion 89, and a sealing resin 94 that seals a part of the land portions 93a and 93b. The land portions 93a and 93b and the die pad portion 89 have a stepped portion 96 in their cross-sectional structure.
And has a structure in which the adhesiveness with the sealing resin 94 is enhanced. That is, the die pad portion 89 and the land portion 9
The area of the upper surface of 3a, 93b is larger than the area of the bottom surface exposed from the sealing resin 94. With this structure, the biting between the sealing resin 94, the lands 93a, 93b, and the die pad portion 89 is improved, and the adhesiveness is improved. Can improve
It is possible to obtain reliability of connection when mounting on a board. With this configuration, the substrate can be mounted on the bottom surface side, the mounting reliability can be improved as compared with the conventional substrate mounting using the beam-shaped leads, and the reliability is equal to or higher than that of the BGA type semiconductor device. It has a sex.

Next, in the resin-encapsulated semiconductor device of the form shown in FIG. 62, similarly, the die pad portion 89 and the semiconductor element 91 bonded to the die pad portion 89 with the adhesive 90 are used.
A semiconductor element 91, land portions 93a and 93b electrically connected to the semiconductor element 91 by a thin metal wire 92, and a semiconductor element 9
1, a fine metal wire 92, a die pad portion 89, and a sealing resin 94 that seals a part of the land portions 93a and 93b. The land portions 93a and 93b have a step portion 96 and a groove portion 95 on the upper surface thereof, and have a structure in which the adhesion with the sealing resin 94 is improved. That is, the land portion of the resin-encapsulated semiconductor device shown in FIG.
This is a structure in which the structure of the die pad portion and the structure of the land portion and the die pad portion of the resin-sealed semiconductor device shown in FIG. 61 are combined, and the sealing resin 94 and the land portions 93 a, 93.
b, the adhesiveness with the die pad portion 89 is dramatically improved, and the package has reliability.

Next, in the resin-sealed semiconductor device of the form shown in FIG. 63, the die pad portion 89 and the semiconductor element 91 bonded to the die pad portion 89 with the adhesive 90 are similarly provided.
A semiconductor element 91, land portions 93a and 93b electrically connected to the semiconductor element 91 by a thin metal wire 92, and a semiconductor element 9
1, a fine metal wire 92, a die pad portion 89, and a sealing resin 94 that seals a part of the land portions 93a and 93b. The land portions 93a and 93b have a stepped portion 96 on both sides in the cross-sectional shape, and the die pad portion 89 also has a stepped portion 96. The sealing resin 94 and the land portions 93a and 93b are also provided. The adhesiveness with the die pad portion 89 is dramatically improved, and the package has reliability.

As described above, in the terminal land frame of this embodiment, the fixed portion having a thickness extremely smaller than the main body thickness is formed by etching, and the land portion forming the external terminal and the die pad portion or post portion for mounting the semiconductor element are formed. By configuring as a frame body, the semiconductor element is mounted, and after the resin is sealed, the frame is peeled off, leaving the die pad portion and the land portion in close contact with the semiconductor element in the sealing resin region, It is possible to separate different frame materials. as a result,
After resin encapsulation, a peeling process can be used to obtain a resin-encapsulated semiconductor device in which land electrodes with standoffs are arranged on the bottom of the package. It is possible to realize an epoch-making manufacturing method that eliminates the step.

Further, in the resin-sealed semiconductor device using the terminal land frame of the present embodiment, the land portion is arranged as an external terminal on the bottom surface of the sealing resin, and the land portion is located from the sealing resin surface. Since they are arranged so as to project, they have a structure that secures a standoff when mounted on a substrate. The protrusion of the land portion, that is, the height of the standoff is formed by itself, and the thickness of the fixing portion of the terminal land frame directly constitutes a step and is projected. That is, the upper surface of the terminal land frame is resin-sealed, and the connection interface between the fixed part of the frame and the die pad part or land part is broken to separate the frame. Is what you can get.

Further, by using the terminal land frame of this embodiment, a small-sized exposed-electrode-bottomed semiconductor device can be obtained, and the problem of coplanarity compared to the conventional mounting by lead bonding such as QFP is also a problem. Therefore, the reliability of board mounting can be improved. In addition, unlike a BGA type semiconductor device, which does not use a base material provided with solder balls, the semiconductor device is composed of a frame body having a fixing portion, so that in terms of moisture resistance, mass productivity, cost efficiency, etc. Is more advantageous than the conventional BGA type semiconductor device.

Further, in the product processing step, as described above, a completed product can be easily obtained by only separating the frame body. Therefore, the lead cutting step, which was necessary in the conventional separation from the frame, By eliminating the lead bend process, damage to the product due to lead cutting and restrictions on cutting accuracy can be eliminated, and it is possible to provide an epoch-making technology that strengthens the cost power by reducing the manufacturing process.

[0162]

As described above, according to the terminal land frame of the present invention, a small-sized resin bottom surface exposed type resin-sealed semiconductor device can be obtained, which is superior to the conventional mounting by lead bonding like QFP. It is possible to improve the reliability of board mounting without the problem of runaround.

Further, in the manufacture of the resin-sealed semiconductor device, a completed product can be easily obtained by only separating the frame body after the resin-sealing, which is necessary in the conventional separation from the frame. It is possible to eliminate the existing process, and to provide an epoch-making technology that strengthens the cost power by reducing the manufacturing process.

[Brief description of drawings]

FIG. 1 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 2 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 5 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 6 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 7 is a diagram showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 8 is a sectional view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 9 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 11 is a cross-sectional view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 13 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 14 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 15 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 16 is a cross-sectional view showing the method of manufacturing the terminal land frame of the embodiment of the present invention.

FIG. 17 is a cross-sectional view showing the method of manufacturing the terminal land frame of the embodiment of the present invention.

FIG. 18 is a sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 19 is a sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 20 is a diagram showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 21 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 22 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 23 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 24 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 25 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 26 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 27 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 28 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 29 is a perspective view showing a method of manufacturing a resin-sealed semiconductor device according to an embodiment of the present invention.

FIG. 30 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 31 is a plan view showing a terminal land frame according to an embodiment of the present invention.

FIG. 32 is a sectional view showing a terminal land frame of one embodiment of the present invention.

FIG. 33 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 34 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 35 is a sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 36 is a sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 37 is a diagram showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 38 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 39 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 40 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 41 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 42 is a cross-sectional view showing the method for manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 43 is a cross-sectional view showing the method of manufacturing the resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 44 is a cross-sectional view showing a terminal land frame of one embodiment of the present invention.

FIG. 45 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 46 is a cross-sectional view showing a terminal land frame of one embodiment of the present invention.

FIG. 47 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 48 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 49 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 50 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 51 is a sectional view showing a terminal land frame according to an embodiment of the present invention.

FIG. 52 is a sectional view showing a terminal land frame of one embodiment of the present invention.

FIG. 53 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 54 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 55 is a cross-sectional view showing the method of manufacturing the terminal land frame of the embodiment of the present invention.

FIG. 56 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 57 is a cross-sectional view showing the method of manufacturing the terminal land frame of the embodiment of the present invention.

FIG. 58 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 59 is a cross-sectional view showing the method of manufacturing the terminal land frame according to the embodiment of the present invention.

FIG. 60 is a sectional view showing a resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 61 is a sectional view showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 62 is a sectional view showing a resin-encapsulated semiconductor device according to an embodiment of the present invention.

FIG. 63 is a cross-sectional view showing a resin-encapsulated semiconductor device of one embodiment of the present invention.

FIG. 64 is a sectional view showing a conventional resin-sealed semiconductor device.

[Explanation of symbols]

1 Semiconductor element 2 adhesive 3 double-sided wiring board 4a, 4b wiring pattern 5 through holes 6 conductors 7 electrode pad 8 thin metal wires 9 Solder resist 10 Sealing resin 11 solder balls 12 frame frame 13 Connection 14 Fixed part 15 Die pad part 16 Land 17 slits 18 metal plate 19a, 19b Etching resist film 20a, 20b openings 21 Die pad 22 Adhesive 23 Semiconductor element 24 thin metal wires 25 Land 26 Sealing resin 27 external terminals 28 Terminal Land Frame 29 frames 30 connection 31 Fixed part 32 Die pad part 33a, 33b Land portion 34 slits 35 metal plate 36a, 36b Etching resist film 37a, 37b, 37c Opening 38 Die pad part 39 Adhesive 40 Semiconductor element 41 thin metal wire 42a, 42b Land portion 43 Sealing resin 44a, 44b External terminals 45 terminal land frame 46 terminal land frame 47 cutter blade 48 Semiconductor element 49 frame 50 connection 51 Fixed part 52 Post section 53a, 53b Land portion 54 slits 55 Metal plate 56a, 56b Etching resist film 57a, 57b, 57c, 57d Opening 58 Post Department 59 Adhesive 60 Semiconductor element 61 fine metal wire 62a, 62b Land portion 63 sealing resin 64a, 64b external terminals 65 Terminal Land Frame 66 Connection 67 Die pad part 68 Land 69 Fixed part 70 groove 71 groove 72 Step 73 Resin filling part 74 Step 75 Step 76 groove 77 Metal plate 78a, 78b Etching resist film 79a, 79b openings 80 Fixed part 81 Land 82 Die pad 83 Connection 84a, 84b Etching resist film 85 opening 86 groove 87 Step 88 Resin filling part 89 Die pad part 90 Adhesive 91 Semiconductor element 92 Fine metal wire 93a, 93b Land portion 94 sealing resin 95 groove 96 step

Claims (8)

(57) [Claims] 1. A bottom portion is formed by forming a connecting portion in the area of the frame frame and having the same thickness as the thickness of the frame frame, and processing the connecting portion in the area of the connecting portion to be extremely thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a lead portion for signal connection arranged around the die pad portion,
When a semiconductor device is configured, the exposed surface is a resin-sealed semiconductor device composed of a terminal land frame consisting of a land portion that becomes an external terminal, and a die pad portion and an adhesive agent on the die pad portion. A sealed semiconductor element, a land portion electrically connected to the electrode of the semiconductor element by a metal thin wire, a semiconductor element, the metal thin wire, the die pad portion, and a part of the land portion sealed The land portion is made of resin, and the bottom surface thereof is provided so as to protrude from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame, and a plurality of groove portions is provided on the top surface of the land portion. The resin-sealed semiconductor device, wherein the thin metal wire connected to the electrode of the semiconductor element is connected between the groove portion on the upper surface of the land portion. 2. A bottom surface portion is formed by forming a connecting portion in the area of the frame frame and having the same thickness as the thickness of the frame frame, and processing the connecting portion in the area of the connecting portion to be much thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a lead portion for signal connection arranged around the die pad portion,
When a semiconductor device is configured, the exposed surface is a resin-sealed semiconductor device composed of a terminal land frame consisting of a land portion that becomes an external terminal, and a die pad portion and an adhesive on the die pad portion. A sealed semiconductor element, a land portion electrically connected to the electrode of the semiconductor element by a metal thin wire, a semiconductor element, the metal thin wire, the die pad portion, and a part of the land portion sealed The land portion is made of resin and has a bottom surface protruding from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame. The land portion has a step portion in its cross-sectional shape. A resin-encapsulated semiconductor device characterized in that 3. A bottom portion is formed by forming a connecting portion within the area of the frame frame and having the same thickness as that of the frame frame, and processing the connecting portion within the area of the connecting portion and being extremely thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a signal connection lead portion arranged in a plurality of rows around the die pad portion, When a semiconductor device is configured, the exposed surface is a resin-sealed semiconductor device composed of a terminal land frame consisting of an area-arranged land portion serving as an external terminal, and a die pad portion and a die pad portion on the die pad portion. One of a semiconductor element bonded by an adhesive, a plurality of land portions electrically connected to the semiconductor element by a metal thin wire, one of the semiconductor element, the metal thin wire, the die pad portion, and the land portion. The land portion is provided with the bottom surface protruding from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame, and the land portion is formed on the surface of the sealing resin. The plurality of grooves are arranged in an area form a plurality of rows, a plurality of groove portions are provided on the upper surface of the land portion, and the thin metal wire connected to the electrode of the semiconductor element is a groove portion and a groove portion on the upper surface of the land portion. A resin-encapsulated semiconductor device, characterized in that it is connected between them. 4. A bottom surface portion is formed by forming a connecting portion in the area of the frame frame and having the same thickness as the thickness of the frame frame, and processing the connecting portion in the area of the connecting portion to be extremely thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a signal connection lead portion arranged in a plurality of rows around the die pad portion, When a semiconductor device is configured, the exposed surface is a resin-sealed semiconductor device composed of a terminal land frame consisting of an area-arranged land portion serving as an external terminal, and a die pad portion and a die pad portion on the die pad portion. One of a semiconductor element bonded by an adhesive, a plurality of land portions electrically connected to the semiconductor element by a metal thin wire, one of the semiconductor element, the metal thin wire, the die pad portion, and the land portion. The land portion is provided with the bottom surface protruding from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame, and the land portion is formed on the surface of the sealing resin. A resin-sealed semiconductor device, comprising a plurality of rows and arranged in an area, wherein the land portion has a step portion in its cross-sectional shape. 5. A bottom surface portion is formed by forming a connecting portion in the area of the frame frame and having the same thickness as the thickness of the frame frame, and processing the connecting portion in the area of the connecting portion to be much thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a lead portion for signal connection arranged around the die pad portion,
When a semiconductor device is configured, a step of preparing a terminal land frame having exposed portions of lands that serve as external terminals, a step of adhering a semiconductor element on the die pad section with an adhesive, A step of connecting the electrode of the element and the land portion with a thin metal wire, and sealing the upper surface of the terminal land frame including the semiconductor element, the die pad portion, the thin metal wire, and the area of the land portion with a sealing resin. A step, applying a breaking force to an interface between the fixed part and the die pad part of the terminal land frame, an interface between the fixed part and the land part, and an interface between the fixed part and the connecting part, Peel-off means for peeling the terminal land frame itself separates the terminal land frame and the portion sealed by the sealing resin. Then, the land portion has a bottom surface projecting from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame to obtain a resin-sealed semiconductor device. Method for manufacturing a resin-encapsulated semiconductor device. 6. A bottom portion is formed by forming a connecting portion in the area of the frame frame and having the same thickness as the thickness of the frame frame, and processing the connecting portion in the area of the connecting portion to be extremely thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a lead portion for signal connection arranged around the die pad portion,
When a semiconductor device is configured, a step of preparing a terminal land frame having exposed portions of lands that serve as external terminals, a step of adhering a semiconductor element on the die pad section with an adhesive, A step of connecting the electrode of the element and the land portion with a thin metal wire, and sealing the upper surface of the terminal land frame including the semiconductor element, the die pad portion, the thin metal wire, and the area of the land portion with a sealing resin. A step, applying a breaking force to an interface between the fixed part and the die pad part of the terminal land frame, an interface between the fixed part and the land part, and an interface between the fixed part and the connecting part, Fix the terminal land frame itself and apply push-up force to the die pad part and the land part to push up the part sealed with the sealing resin. By separating the terminal land frame and the portion sealed by the sealing resin, the bottom of the land portion is the thickness of the fixing portion of the terminal land frame from the surface of the sealing resin. A method for manufacturing a resin-encapsulated semiconductor device, comprising the step of obtaining a resin-encapsulated semiconductor device provided so as to project. 7. A bottom portion is formed in a region of the frame frame, a connecting portion having the same thickness as that of the frame frame, and processed in the region of the connecting portion to be much thinner than the thickness of the connecting portion. A fixed portion, a die pad portion for mounting a semiconductor element formed in a central region of the fixed portion, and a lead portion for signal connection arranged around the die pad portion,
When a semiconductor device is configured, the exposed surface is a resin-sealed semiconductor device composed of a terminal land frame consisting of a land portion that becomes an external terminal, and a die pad portion and an adhesive on the die pad portion. A sealed semiconductor element, a land portion electrically connected to the electrode of the semiconductor element by a metal thin wire, a semiconductor element, the metal thin wire, the die pad portion, and a part of the land portion sealed The land portion is made of resin, and the bottom surface thereof is provided so as to protrude from the surface of the sealing resin by the thickness of the fixing portion of the terminal land frame, and the area of the upper surface of the land portion is the bottom of the land portion. A resin-encapsulated semiconductor device, which is larger than the surface area. Area of the upper surface of 8. die pad portion, the resin sealed semiconductor device according to claim 7, wherein greater than the area of the bottom surface of the die pad.