JPH09129813A - Lead frame and semiconductor device using the same - Google Patents

Lead frame and semiconductor device using the same

Info

Publication number
JPH09129813A
JPH09129813A JP30383295A JP30383295A JPH09129813A JP H09129813 A JPH09129813 A JP H09129813A JP 30383295 A JP30383295 A JP 30383295A JP 30383295 A JP30383295 A JP 30383295A JP H09129813 A JPH09129813 A JP H09129813A
Authority
JP
Japan
Prior art keywords
die pad
lead frame
heat dissipation
dissipation plate
lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP30383295A
Other languages
Japanese (ja)
Other versions
JP3113560B2 (en
Inventor
Takeaki Kozono
武明 小園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP30383295A priority Critical patent/JP3113560B2/en
Publication of JPH09129813A publication Critical patent/JPH09129813A/en
Application granted granted Critical
Publication of JP3113560B2 publication Critical patent/JP3113560B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a lead frame provided with a heat dissipating plate of excellent quality, and a semiconductor device using the same. SOLUTION: This lead frame is provided with a die pad 2 for mounting a semiconductor chip, a lead frame main body part having a plurality of inner leads 3 arranged in the outer peripheral part of the die pad, outer leads stretching from the inner leads, and a heat dissipating plate 18 which is in contact closely with the lower surface of the die pad 2 and dissipates heat. A plurality of protrusions 26 formed on the lower surface of the die pad 2 are forcibly engaged with recesses or through holes 27 of the heat dissipating plate 18. Thereby the lead frame main body part and the heat dissipating plate 18 are fixedly unified in a body. The lead frame provided with the heat dissipating plate, a semiconductor chip fixed and mounted on the die pad 2, and the inner leads 3 are connected together by using bonding wires. The part inside the inner leads 3 is packaged by using sealing material.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、ダイパッドと放熱
板とに夫々形成された、凸部と凹部または貫通孔とを嵌
合させて固着一体化した放熱板付リードフレームと、こ
れを用いた半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame with a heat radiating plate, which is formed on a die pad and a heat radiating plate. Regarding the device.

【0002】[0002]

【従来の技術】IC、LSI等の半導体装置の実装に際
して用いられるリードフレームは、鉄系あるいは銅系の
金属材料からなる帯状薄板をスタンピングあるいはエッ
チング加工法により所望の形状に成形することによって
形成される。
2. Description of the Related Art A lead frame used for mounting a semiconductor device such as an IC or an LSI is formed by molding a thin strip of an iron-based or copper-based metal material into a desired shape by stamping or etching. It

【0003】通常、リードフレーム1は第5図に示すよ
うに、ダイパッド2と、該ダイパッド2を取り囲むよう
に配設された複数のインナ−リード3と、該インナーリ
ード3を一体的に連結するタイバー4と、各インナーリ
ード3に連結していてタイバー4の外側に伸長するアウ
ターリード5と、該アウターリード5が連結されるサイ
ドレール6と、前記ダイパッド2を支持するサポートバ
ー7から構成されており、図6に示すように半導体装置
は、前記リードフレーム1の前記ダイパッド2に固着搭
載された半導体チップ15の各電極と、それに対応する
前記インナーリード3とを、金線あるいはアルミ線のボ
ンディングワイヤ−16により結線して、封止材料によ
って前記インナーリード3以内をパッケージングした
後、前記タイバー4および前記サイドレール6を切断
し、当該パッケージ17から突出する前記アウターリー
ド5を所望の形状に折り曲げて完成されている。
Usually, the lead frame 1 integrally connects the die pad 2, a plurality of inner leads 3 arranged so as to surround the die pad 2, and the inner lead 3 as shown in FIG. A tie bar 4, an outer lead 5 that is connected to each inner lead 3 and extends outside the tie bar 4, a side rail 6 to which the outer lead 5 is connected, and a support bar 7 that supports the die pad 2. As shown in FIG. 6, in the semiconductor device, each electrode of the semiconductor chip 15 fixedly mounted on the die pad 2 of the lead frame 1 and the corresponding inner lead 3 are connected by a gold wire or an aluminum wire. After connecting with a bonding wire-16 and packaging the inside of the inner lead 3 with a sealing material, the tie bar 4 Cutting the pre said side rail 6, and the outer leads 5 protruding from the package 17 is completed by bending into a desired shape.

【0004】近年、半導体集積回路の多機能化、高集積
化に伴って半導体チップサイズおよびこれを支持するダ
イパッドも大型化する一方、パッケージの外観サイズの
小型化によって、パッケージに対するダイパッドの占有
面積比が大きくなり、ダイパッドと封止樹脂との密着性
が悪く、また、熱膨張係数が違うことから、半導体チッ
プの発熱による継続的な熱ストレスが加わるとダイパッ
ドと封止樹脂界面での剥離、半導体チップのクラックや
パッケージクラック等が発生しており、半導体装置の信
頼性を低下させている。
In recent years, as semiconductor integrated circuits have become more multifunctional and highly integrated, the semiconductor chip size and the die pad supporting the semiconductor chip have also become larger, while the external size of the package has become smaller. Is large, the adhesion between the die pad and the sealing resin is poor, and the thermal expansion coefficient is different.Therefore, if continuous thermal stress is applied by the heat generation of the semiconductor chip, peeling at the interface between the die pad and the sealing resin may occur. Chip cracks, package cracks, and the like are occurring, which lowers the reliability of the semiconductor device.

【0005】そこで、特に消費電力とそれに伴う発熱量
の大きい半導体装置においては、図7に示すように、リ
ードフレームの下面に熱導電性の優れた金属製の放熱板
18を絶縁性接着材19を介して固着させ、この放熱板
18を有するリードフレームを樹脂パッケージに内蔵す
ることにより、半導体チップの発熱を積極的且つ効率的
に外部へ放出し、半導体装置内部での過度の温度上昇を
抑制し、その特性が変化することなく安定した機能を保
持させる方法が一般的に実施されている。
Therefore, particularly in a semiconductor device that consumes a large amount of power and generates heat accordingly, as shown in FIG. 7, a heat sink 18 made of metal having excellent thermal conductivity is attached to the lower surface of the lead frame by an insulating adhesive material 19. The lead frame having the heat radiating plate 18 is fixed in the resin package and built in the resin package, so that the heat generated in the semiconductor chip is positively and efficiently discharged to the outside, and an excessive temperature rise inside the semiconductor device is suppressed. However, a method of maintaining a stable function without changing its characteristics is generally practiced.

【0006】[0006]

【この発明が解決しようとする課題】しかしながら、上
記のような構成の半導体装置においては、リードフレー
ム本体部と放熱板とを固着させる際、前述したように、
両面に熱可塑性あるいは熱硬化性の接着層が形成された
絶縁性接着材を使用しているが、このての接着材は吸湿
性を持っており、この性質に伴い半導体装置内部に水分
が侵入すると、半導体装置の組立工程時の熱履歴や、半
導体装置の作動に伴う温度上昇により、前記水分が気化
膨張し、気泡やガスを発生させて樹脂界面での剥離、パ
ッケージのクラック、そして内部リードの腐食を引き起
こしており、半導体装置の機能特性、信頼性が著しく損
なわれている。
However, in the semiconductor device having the above-mentioned structure, when the lead frame body and the heat sink are fixed to each other, as described above,
An insulating adhesive with a thermoplastic or thermosetting adhesive layer formed on both sides is used.This adhesive has a hygroscopic property, and this property allows moisture to enter the inside of the semiconductor device. Then, the heat history during the assembly process of the semiconductor device and the temperature rise accompanying the operation of the semiconductor device cause the moisture to evaporate and expand, generating bubbles and gas to cause peeling at the resin interface, package cracks, and internal leads. Cause the corrosion of the semiconductor device, and the functional characteristics and reliability of the semiconductor device are significantly impaired.

【0007】また、このての接着材は非常に高価である
ため、製造コストや製品価格の高騰を招く要因ともなっ
ている。本発明は前記の実情に鑑みてなされたもので、
前記接着材に起因する半導体装置内部での吸湿現象を防
止して、十分な耐湿性を確保することにより、長期に亘
り安定した機能と信頼性を維持することのできる、優れ
た品質を備えた半導体装置を提供することを目的とす
る。
Further, since the adhesive material used in this case is very expensive, it also causes a rise in the manufacturing cost and the product price. The present invention has been made in view of the above circumstances,
By preventing the moisture absorption phenomenon inside the semiconductor device due to the adhesive material and ensuring sufficient moisture resistance, it is possible to maintain stable function and reliability for a long period of time, and it has excellent quality. An object is to provide a semiconductor device.

【0008】[0008]

【課題を解決するための手段】上記目的を達成する本発
明の特徴とするところは、半導体チップを搭載するダイ
パッドと、その外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記ダイパッドの下面に形成された複数
の凸部を、該凸部に対峙して且つ該凸部に相当する位置
に形成された放熱板の凹部または貫通孔に嵌合圧入する
ことにより、リードフレーム本体部と放熱板とが固着一
体化したことを特徴とする放熱板付リードフレームと、
前記ダイパッドに固着搭載された半導体チップと、前記
インナーリードとがボンディングワイヤーで接続され、
前記インナーリード以内を封止材料によりパッケージし
た半導体装置にある。
The features of the present invention for achieving the above object are that a die pad on which a semiconductor chip is mounted, a plurality of inner leads provided on the outer periphery of the die pad, and extending from the inner leads. In a lead frame including a lead frame main body portion having an outer lead and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat, a plurality of convex portions formed on the lower surface of the die pad are provided. The heat dissipation characterized in that the lead frame main body and the heat dissipation plate are fixedly integrated by fitting and press-fitting into the recess or the through hole of the heat dissipation plate formed at a position facing each other and corresponding to the projection. A lead frame with a board,
The semiconductor chip fixedly mounted on the die pad and the inner lead are connected by a bonding wire,
There is a semiconductor device in which the inside of the inner lead is packaged with a sealing material.

【0009】[0009]

【発明の実施の形態】本発明では、ダイパッド下面に形
成された複数の凸部を有するリードフレーム本体部と、
前記凸部に対峙して且つ前記凸部に相当する位置に凹部
または貫通孔を有する放熱板とを、それぞれに形成され
た凸部と凹部または貫通孔とを嵌合させて固着一体化し
ているため、リードフレーム本体部と放熱板との固着に
際し、何ら接着材を使用しておらず、この接着材による
半導体装置内部での吸湿現象が起こることがない。従っ
て、従来のように吸湿に起因していた樹脂界面の剥離、
パッケージクラック、リード腐食等の種々問題も発生す
ることがない。
BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, a lead frame main body portion having a plurality of convex portions formed on a lower surface of a die pad,
A heat dissipation plate facing the convex portion and having a concave portion or a through hole at a position corresponding to the convex portion is fixedly integrated by fitting the convex portion and the concave portion or the through hole formed respectively. Therefore, no adhesive is used to fix the lead frame body and the heat sink, and the moisture absorption phenomenon inside the semiconductor device due to this adhesive does not occur. Therefore, peeling of the resin interface due to moisture absorption as in the past,
Various problems such as package cracks and lead corrosion do not occur.

【0010】[0010]

【実施例】以下、本発明の一実施例を図面に基づいて説
明する。図1(a)は本発明の第1の実施例を示すリー
ドフレーム本体部の平面図。同図(b)はその断面図。
同図(c)は放熱板の平面図。同図(d)はその断面
図。図2は本発明の第1の実施例を示す半導体装置の断
面図。図3は本発明の第2の実施例を示す放熱板付リー
ドフレームの断面図、図4は本発明の第3の実施例を示
す放熱板付リードフレームの断面図。図5は従来技術を
示すリードフレームの平面図。図6は従来技術を示す半
導体装置の断面図。図7は従来技術を示す放熱板付リー
ドフレームの断面図である。なお、図1〜図4において
従来技術と同一または相当部分には、同一符号を付して
ある。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1A is a plan view of a lead frame main body portion showing a first embodiment of the present invention. The same figure (b) is the sectional view.
FIG. 3C is a plan view of the heat sink. The same figure (d) is the sectional view. FIG. 2 is a sectional view of a semiconductor device showing a first embodiment of the present invention. FIG. 3 is a sectional view of a lead frame with a heat sink showing a second embodiment of the present invention, and FIG. 4 is a sectional view of a lead frame with a heat sink showing a third embodiment of the present invention. FIG. 5 is a plan view of a lead frame showing a conventional technique. FIG. 6 is a sectional view of a semiconductor device showing a conventional technique. FIG. 7 is a cross-sectional view of a lead frame with a heat dissipation plate showing a conventional technique. 1 to 4, parts that are the same as or correspond to those in the conventional technique are denoted by the same reference numerals.

【0011】図1の実施例おいて、リードフレーム本体
部25のダイパッド2下面には、複数の凸部26が形成
されており、一方の放熱板18には前記凸部26に対峙
して且つ前記凸部26に相当する位置に凹部27または
貫通孔(図示しない)が形成されており、該凹部27ま
たは貫通孔に前記凸部26を嵌合圧入すると、リードフ
レーム本体部25と放熱板18とが機械的に接合固着さ
れて、本発明による放熱板付リードフレームを完成させ
得ることができる。
In the embodiment of FIG. 1, a plurality of convex portions 26 are formed on the lower surface of the die pad 2 of the lead frame main body portion 25, and one heat radiating plate 18 faces the convex portions 26 and A concave portion 27 or a through hole (not shown) is formed at a position corresponding to the convex portion 26, and when the convex portion 26 is press fitted into the concave portion 27 or the through hole, the lead frame main body portion 25 and the heat radiating plate 18 are formed. It is possible to complete the lead frame with the heat radiating plate according to the present invention by mechanically joining and fixing the and.

【0012】そして、図2に示す本発明による半導体装
置は、前記放熱板付リードフレームのダイパッド2上面
に半導体チップ15を固着搭載し、その端子と前記ダイ
パッド2外周に設けられた複数のインナーリード3とを
ボンディングワイヤー16を介して接続し、次いで、前
記インナーリード3以内となる前記ダイパッド2と、前
記半導体チップ15および前記ボンディングワイヤー1
6とを封止樹脂によってパッケージして、その後、パッ
ケージ17から突出するアウターリード5を所望の形状
に折り曲げて完成させ得ることができる。
In the semiconductor device according to the present invention shown in FIG. 2, the semiconductor chip 15 is fixedly mounted on the upper surface of the die pad 2 of the lead frame with the heat radiating plate, and its terminals and a plurality of inner leads 3 provided on the outer periphery of the die pad 2. Via the bonding wire 16, and then the die pad 2 within the inner lead 3, the semiconductor chip 15 and the bonding wire 1
6 and 6 can be packaged with a sealing resin, and then the outer leads 5 projecting from the package 17 can be bent into a desired shape to be completed.

【0013】前記の実施例では、リードフレーム本体部
25および放熱板18共に、その材質は銅合金を用いた
ものを夫々組合せているが、使用する材質とその組合せ
はこれに限るものではなく、例えばリードフレーム本体
部25には、比較的に半導体チップと熱膨張係数が近い
42アロイ材を用い、放熱板18には銅合金あるいはア
ルミニウム合金の材質を用いる等、多様な材質の組合せ
において製造することができる。
In the above embodiment, the lead frame body 25 and the heat dissipation plate 18 are made of copper alloy, respectively. However, the materials to be used and the combination thereof are not limited to this. For example, the lead frame main body 25 is made of 42 alloy material having a thermal expansion coefficient relatively close to that of the semiconductor chip, and the heat dissipation plate 18 is made of copper alloy or aluminum alloy. be able to.

【0014】次に、前記の実施例ではダイパッド2下面
の凸部26を、放熱板18の凹部27または貫通孔に嵌
合圧入して固着しているが、この場合に予め放熱板18
の凹部27または貫通孔と、これ以外のダイパッド2下
面と接触する領域に、例えばAgペースト等の導体層を
塗布しておくと、固着の際にダイパッド2と放熱板18
の間に隙間が生じず、また、ダイパッド2と放熱板18
との固着力も増すと同時に、放熱板18への導電性も向
上する。
Next, in the above-described embodiment, the convex portion 26 on the lower surface of the die pad 2 is fitted and press-fitted into the concave portion 27 or the through hole of the heat radiating plate 18, and fixed in this case.
If a conductor layer such as Ag paste is applied to the recesses 27 or through holes of the die pad and the other areas contacting the lower surface of the die pad 2, the die pad 2 and the heat radiating plate 18 are fixed when they are fixed.
No gap is created between the die pad 2 and the heat sink 18
At the same time as the fixing force with the heat dissipation plate is increased, the conductivity to the heat dissipation plate 18 is also improved.

【0015】また、放熱板18に貫通孔が形成されてい
るものでは、ダイパッド2下面の凸部26と嵌合してい
る貫通孔の一方の孔より、前記凸部26先端に潰しを施
したり、微量の密着性強化材を塗布することもでき、リ
ードフレーム本体部25および放熱板18との嵌合状態
がより一層強固なものになる。
Further, in the case where the heat dissipation plate 18 is formed with a through hole, the tip of the convex portion 26 is crushed from one of the through holes fitted with the convex portion 26 on the lower surface of the die pad 2. It is also possible to apply a small amount of the adhesion strengthening material, and the fitting state with the lead frame main body portion 25 and the heat dissipation plate 18 becomes even stronger.

【0016】さらには、パッケージングの際に、封止樹
脂が貫通孔に入り込んでくると、放熱板18と封止樹脂
との密着性がより向上し、放熱板18に熱ストレスが加
わった場合も、これを緩和することができる。
Furthermore, when the sealing resin enters into the through hole during packaging, the adhesion between the heat sink 18 and the sealing resin is further improved, and heat stress is applied to the heat sink 18. Can also alleviate this.

【0017】次に、ダイパッド2下面に形成された複数
の凸部26は、一般的なプレス加工によって形成された
ものであって、金型内のポンチによってダイパッド上面
の所定領域を押圧してその下面を所望の量だけ突出させ
て当該凸部26を形成している。従って、プレス加工に
よってダイパッド2の下面に凸部26を形成すると、こ
れと同時にダイパッド2上面には前記凸部26に対峙す
る位置に凹部35が形成される。
Next, the plurality of convex portions 26 formed on the lower surface of the die pad 2 are formed by general press working, and a predetermined area on the upper surface of the die pad is pressed by a punch in the mold. The lower surface is projected by a desired amount to form the convex portion 26. Therefore, when the convex portion 26 is formed on the lower surface of the die pad 2 by press working, at the same time, the concave portion 35 is formed on the upper surface of the die pad 2 at a position facing the convex portion 26.

【0018】当該凹部35は、ダイパッド2と半導体チ
ップ15を固着させる際、ダイパッド2に塗布されるレ
ジンまたはAgペースト等、液体あるいは流体状の接着
材が前記半導体チップの接着領域外に漏出した場合も、
その接着材を凹部に入り込ませて堰き止め、他の領域へ
の漏出を防止する。
When the die pad 2 and the semiconductor chip 15 are fixed to each other, the recess 35 is formed when a liquid or fluid adhesive such as resin or Ag paste applied to the die pad 2 leaks out of the bonding area of the semiconductor chip. Also,
The adhesive is allowed to enter the concave portion and dammed to prevent leakage to other areas.

【0019】さらには、パッケージングの際に、当該凹
部35に封止樹脂が入り込むとダイパッドと封止樹脂と
の密着性が向上し、熱ストレスによるダイパッドと封止
樹脂界面の剥離に対して強固な状態を保持できる。
Furthermore, when the encapsulating resin enters the recess 35 during packaging, the adhesiveness between the die pad and the encapsulating resin is improved, and the die pad and the encapsulating resin interface are strongly resistant to peeling due to thermal stress. Can be kept in good condition.

【0020】前記の実施例では、前記凸部26を生産性
および製造コストの面から、プレス加工によって形成し
ているが、形成方法はこれに限るものではなく、例えば
エッチング加工によって形成してもよく、特にダイパッ
ドに応力の影響を与ることなく凸部26を形成したい場
合は、エッチング加工が有効である。
In the above-mentioned embodiment, the convex portion 26 is formed by pressing in view of productivity and manufacturing cost. However, the forming method is not limited to this, and it may be formed by etching, for example. Well, in particular, when it is desired to form the convex portion 26 without exerting stress on the die pad, the etching process is effective.

【0021】また、一方の放熱板18の凹部27または
貫通孔の形成も、前記凸部26と同様に、プレスあるい
はエッチング加工方法を用いて形成することができる。
Further, the recess 27 or the through hole of the one heat radiating plate 18 can also be formed by using a pressing or etching processing method like the projection 26.

【0022】なお、前記の実施例では、ダイパッド2の
下面に形成された凸部26と、放熱板18に形成された
凹部27または貫通孔とを夫々嵌合させて本発明の放熱
板付リードフレームを完成しているが、嵌合する凸部お
よび凹部または貫通孔の形成部位は前記実施例に限るも
のではなく、例えば図3に示すように放熱板18に複数
の凸部36を形成し、ダイパッド2下面の前記凸部36
に対峙して且つ前記凸部36に相当する位置に凹部37
を形成し、それぞれの凸部36と凹部37を嵌合させて
固着一体化させてもよく、また、図4に示すようにダイ
パッド2に貫通孔38を形成して放熱板18の凸部36
と嵌合固着させてもよい。
In the above embodiment, the lead frame with heat sink plate of the present invention is formed by fitting the protrusions 26 formed on the lower surface of the die pad 2 and the recesses 27 or through holes formed on the heat sink plate 18, respectively. Although the fitting convex portion and the concave portion or the portion where the through hole is formed are not limited to the above-described embodiment, for example, a plurality of convex portions 36 are formed on the heat dissipation plate 18 as shown in FIG. The convex portion 36 on the lower surface of the die pad 2
A concave portion 37 at a position facing the convex portion 36 and corresponding to the convex portion 36.
May be formed, and the respective convex portions 36 and concave portions 37 may be fitted and fixedly integrated with each other. Further, as shown in FIG. 4, through holes 38 may be formed in the die pad 2 to form the convex portions 36 of the heat dissipation plate 18.
It may be fitted and fixed.

【0023】この場合も、予め放熱板18の凸部36お
よびこれ以外のダイパッド2と接触する領域にAgペー
スト等の導体層を形成しておくと、固着の際にダイパッ
ド2と放熱板18の間に隙間が生じず、また、ダイパッ
ド2と放熱板18との固着力も増すと同時に、放熱板1
8への導電性も向上する。
Also in this case, if a conductor layer of Ag paste or the like is formed in advance in the convex portion 36 of the heat sink 18 and in the other regions contacting the die pad 2, the die pad 2 and the heat sink 18 are fixed to each other when they are fixed. There is no gap between them, and the fixing force between the die pad 2 and the heat sink 18 is increased, and at the same time, the heat sink 1
The conductivity to 8 is also improved.

【0024】また、ダイパッド2に貫通孔38が形成さ
れ、熱板板18の凸部36と嵌合している場合は、該凸
部36が嵌合している貫通孔の一方の孔より、前記凸部
36先端に潰しを施したり、微量の密着性強化材を塗布
すると、嵌合状態をより一層強固にすることができる。
Further, when the through hole 38 is formed in the die pad 2 and is fitted with the convex portion 36 of the hot plate 18, the one of the through holes with which the convex portion 36 is fitted is If the tip of the convex portion 36 is crushed or a slight amount of the adhesion enhancing material is applied, the fitting state can be further strengthened.

【0025】[0025]

【発明の効果】以上のように本発明によれば、ダイパッ
ドの下面に複数の凸部を形成したリードフレーム本体部
と、前記凸部に対峙して且つ前記凸部に相当する位置に
凹部または貫通孔を形成した放熱板とを、それぞれに形
成した凸部と凹部または貫通孔とを嵌合させて固着一体
化するため、接着材を使用する必要がない。従って、こ
の放熱板付リードフレームを用いた半導体装置では、前
記接着材に係る吸湿現象が起こらず、樹脂界面の剥離、
パッケージクラック、内部リードの腐食等を発生させる
ことのない、十分な耐湿性を確保でき且つ半導体装置内
部の構成部位と封止樹脂との密着強度が向上したことか
ら、長期に亘り安定した機能と信頼性を維持することの
できる、優れた品質を備えた半導体装置が得られる。
As described above, according to the present invention, the lead frame main body portion having a plurality of convex portions formed on the lower surface of the die pad, and the concave portion at a position facing the convex portion and corresponding to the convex portion, Since the convex portion and the concave portion or the through hole formed on each of the heat dissipation plates having the through holes are fitted and fixedly integrated, there is no need to use an adhesive material. Therefore, in the semiconductor device using the lead frame with the heat dissipation plate, the moisture absorption phenomenon related to the adhesive does not occur, and the resin interface peels,
It does not cause package cracks, corrosion of internal leads, etc., sufficient moisture resistance can be secured, and the adhesion strength between the constituent parts inside the semiconductor device and the sealing resin has been improved. A semiconductor device with excellent quality that can maintain reliability can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)本発明の第1の実施例を示すリ−ドフレ
−ム本体部の平面図である。 (b)本発明の第1の実施例を示すリ−ドフレ−ム本体
部の断面図である。 (c)本発明の第1の実施例を示す放熱板の平面図であ
る。 (d)本発明の第1の実施例を示す放熱板の断面図であ
る。
FIG. 1 (a) is a plan view of a lead frame main body showing a first embodiment of the present invention. (B) It is sectional drawing of the lead frame main-body part which shows the 1st Example of this invention. (C) It is a top view of the heat sink which shows the 1st Example of this invention. (D) It is sectional drawing of the heat sink which shows the 1st Example of this invention.

【図2】本発明の第1の実施例を示す半導体装置の断面
図である。
FIG. 2 is a sectional view of a semiconductor device showing a first embodiment of the present invention.

【図3】本発明の第2の実施例を示す放熱板付リードフ
レームの断面図である。
FIG. 3 is a sectional view of a lead frame with a heat radiating plate showing a second embodiment of the present invention.

【図4】本発明の第3の実施例に示す放熱板付リードフ
レームの断面図である。
FIG. 4 is a cross-sectional view of a lead frame with a heat sink according to a third embodiment of the present invention.

【図5】従来技術を示すリ−ドフレ−ムの平面図であ
る。
FIG. 5 is a plan view of a lead frame showing a conventional technique.

【図6】従来技術を示す半導体装置の断面図である。FIG. 6 is a cross-sectional view of a semiconductor device showing a conventional technique.

【図7】従来技術を示す放熱板付リードフレームの断面
図である。
FIG. 7 is a cross-sectional view of a lead frame with a radiator plate showing a conventional technique.

【符号の説明】 1、リードフレーム 2、ダイパッド 3、インナ−リード 4、タイバー 5、アウタ−リ−ド 6、サイドレール 7、サポートバー 15、半導体チップ 16、ボンディングワイヤ− 17、パッケージ 18、放熱板 19、絶縁性接着材 25、リードフレーム本体部 26、ダイパッド下面の凸部 27、放熱板の凹部または貫通孔 35、ダイパッド上面の凹部 36、放熱板の凸部 37、ダイパッド下面の凹部[Explanation of symbols] 1, lead frame 2, die pad 3, inner lead 4, tie bar 5, outer lead 6, side rail 7, support bar 15, semiconductor chip 16, bonding wire 17, package 18, heat dissipation Plate 19, Insulating Adhesive 25, Lead Frame Main Body 26, Die Pad Lower Surface Convex 27, Heat Dissipator Recess or Through Hole 35, Die Pad Top Recess 36, Heat Sink Convex 37, Die Pad Bottom Recess

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップを搭載するダイパッドと、
該ダイパッド外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記ダイパッドの下面には複数の凸部が
形成されており、前記放熱板には前記凸部に対峙して且
つ前記凸部に相当する位置に凹部または貫通孔が形成さ
れていることを特徴とするリードフレーム。
A die pad on which a semiconductor chip is mounted;
A lead including a lead frame main body portion having a plurality of inner leads provided on the outer periphery of the die pad and outer leads extending from the inner leads, and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat. In the frame, a plurality of convex portions are formed on the lower surface of the die pad, and the heat dissipation plate is provided with a concave portion or a through hole at a position facing the convex portion and corresponding to the convex portion. Lead frame characterized by.
【請求項2】 リードフレーム本体部のダイパッド下面
に形成された複数の凸部を、該凸部に対峙して且つ該凸
部に相当する位置に形成された放熱板の凹部または貫通
孔に嵌合圧入することにより、リードフレーム本体部と
放熱板とが固着一体化したことを特徴とする請求項1記
載のリードフレーム。
2. A plurality of convex portions formed on the lower surface of the die pad of the lead frame main body are fitted in concave portions or through holes of a heat radiating plate formed at positions corresponding to the convex portions and facing the convex portions. The lead frame according to claim 1, wherein the lead frame main body and the heat dissipation plate are fixedly integrated with each other by press fitting.
【請求項3】 半導体チップを搭載するダイパッドと、
該ダイパッド外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記ダイパッドの下面には複数の凸部が
形成され、前記放熱板には前記凸部に対峙して且つ前記
凸部に相当する位置に凹部または貫通孔が形成されてお
り、該凹部または貫通孔に前記凸部が嵌合圧入すること
により、リードフレーム本体部と放熱板とが固着一体化
すると共に、前記ダイパッドに固着搭載された半導体チ
ップと、前記インナーリードとがボンディングワイヤー
で接続され、前記インナーリード以内を封止材料により
パッケージした半導体装置。
3. A die pad on which a semiconductor chip is mounted;
A lead including a lead frame main body portion having a plurality of inner leads provided on the outer periphery of the die pad and outer leads extending from the inner leads, and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat. In the frame, a plurality of convex portions are formed on the lower surface of the die pad, and the heat dissipation plate has a concave portion or a through hole formed at a position facing the convex portion and corresponding to the convex portion. Alternatively, by fitting and press-fitting the convex portion into the through hole, the lead frame main body portion and the heat sink are fixedly integrated, and the semiconductor chip fixedly mounted on the die pad and the inner lead are connected by a bonding wire. A semiconductor device in which the inside of the inner lead is packaged with a sealing material.
【請求項4】 半導体チップを搭載するダイパッドと、
該ダイパッド外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記放熱板の上面には複数の凸部が形成
されており、前記ダイパッドの下面には前記凸部に対峙
して且つ前記凸部に相当する位置に凹部または貫通孔が
形成されていることを特徴とするリードフレーム。
4. A die pad on which a semiconductor chip is mounted;
A lead including a lead frame main body having a plurality of inner leads provided on the outer periphery of the die pad and outer leads extending from the inner leads, and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat. In the frame, a plurality of convex portions is formed on the upper surface of the heat dissipation plate, and a concave portion or a through hole is formed on the lower surface of the die pad so as to face the convex portion and correspond to the convex portion. Lead frame characterized by
【請求項5】 放熱板の上面に形成された複数の凸部
を、該凸部に対峙して且つ該凸部に相当する位置に形成
されたダイパッド下面の凹部または貫通孔に嵌合圧入す
ることにより、リードフレーム本体部と放熱板とが固着
一体化したことを特徴とする請求項4記載のリードフレ
ーム。
5. A plurality of convex portions formed on the upper surface of the heat dissipation plate are press-fitted into concave portions or through holes on the lower surface of the die pad formed at positions corresponding to the convex portions and corresponding to the convex portions. 5. The lead frame according to claim 4, wherein the lead frame body and the heat sink are fixedly integrated with each other.
【請求項6】 半導体チップを搭載するダイパッドと、
該ダイパッド外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記放熱板の上面には複数の凸部が形成
され、前記ダイパッドの下面には前記凸部に対峙して且
つ前記凸部に相当する位置に凹部または貫通孔が形成さ
れており、該凹部または貫通孔に前記凸部が嵌合圧入す
ることにより、リードフレーム本体部と放熱板とが固着
一体化すると共に、前記ダイパッドに固着搭載された半
導体チップと、前記インナーリードとがボンディングワ
イヤーで接続され、前記インナーリード以内を封止材料
によりパッケージした半導体装置。
6. A die pad on which a semiconductor chip is mounted,
A lead including a lead frame main body portion having a plurality of inner leads provided on the outer periphery of the die pad and outer leads extending from the inner leads, and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat. In the frame, a plurality of convex portions is formed on the upper surface of the heat dissipation plate, and a concave portion or a through hole is formed on the lower surface of the die pad so as to face the convex portion and correspond to the convex portion. By fitting and press-fitting the convex portion into the concave portion or the through hole, the lead frame main body portion and the heat dissipation plate are fixed and integrated, and the semiconductor chip fixedly mounted on the die pad and the inner lead are bonded to each other by a bonding wire. And a semiconductor device in which the inside of the inner lead is packaged with a sealing material.
JP30383295A 1995-10-26 1995-10-26 Lead frame and semiconductor device using the same Expired - Lifetime JP3113560B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30383295A JP3113560B2 (en) 1995-10-26 1995-10-26 Lead frame and semiconductor device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30383295A JP3113560B2 (en) 1995-10-26 1995-10-26 Lead frame and semiconductor device using the same

Publications (2)

Publication Number Publication Date
JPH09129813A true JPH09129813A (en) 1997-05-16
JP3113560B2 JP3113560B2 (en) 2000-12-04

Family

ID=17925851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30383295A Expired - Lifetime JP3113560B2 (en) 1995-10-26 1995-10-26 Lead frame and semiconductor device using the same

Country Status (1)

Country Link
JP (1) JP3113560B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100401142B1 (en) * 1999-12-30 2003-10-10 앰코 테크놀로지 코리아 주식회사 Semiconductor package
JP2009010208A (en) * 2007-06-28 2009-01-15 Mitsui High Tec Inc Compound lead frame and semiconductor device using compound lead frame
JP2016076640A (en) * 2014-10-08 2016-05-12 カルソニックカンセイ株式会社 Semiconductor cooling structure

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100401142B1 (en) * 1999-12-30 2003-10-10 앰코 테크놀로지 코리아 주식회사 Semiconductor package
JP2009010208A (en) * 2007-06-28 2009-01-15 Mitsui High Tec Inc Compound lead frame and semiconductor device using compound lead frame
JP2016076640A (en) * 2014-10-08 2016-05-12 カルソニックカンセイ株式会社 Semiconductor cooling structure

Also Published As

Publication number Publication date
JP3113560B2 (en) 2000-12-04

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