JPH09172127A - Lead frame and semiconductor device using it - Google Patents

Lead frame and semiconductor device using it

Info

Publication number
JPH09172127A
JPH09172127A JP34976595A JP34976595A JPH09172127A JP H09172127 A JPH09172127 A JP H09172127A JP 34976595 A JP34976595 A JP 34976595A JP 34976595 A JP34976595 A JP 34976595A JP H09172127 A JPH09172127 A JP H09172127A
Authority
JP
Japan
Prior art keywords
die pad
lead frame
lead
heat sink
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP34976595A
Other languages
Japanese (ja)
Inventor
Takeaki Kozono
武明 小園
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui High Tec Inc
Original Assignee
Mitsui High Tec Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui High Tec Inc filed Critical Mitsui High Tec Inc
Priority to JP34976595A priority Critical patent/JPH09172127A/en
Publication of JPH09172127A publication Critical patent/JPH09172127A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Lead Frames For Integrated Circuits (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide an excellent quality lead frame, which has a heat sink, maintains a stable function and reliability for a long time, and a semiconductor device using such a lead frame. SOLUTION: A lead frame is provided with a heat sink 4 which adheres at the bottom of a die pad 2 and dissipates heat. A plurality of nails 8 are formed on the heat sink and are lanced in the height direction. A die pad is fitted and mounted on the inner plane area, and the die pad is fitted by bending the leading edge of the tooth. The lead frame, which is provided with the heat sink and integrates the lead frame main body with the heat sink 4 by firm bonding, a semiconductor chip mounted on the die pad 2 by firm bonding and an inner lead are connected by bonding wire. The internal of the inner lead is package with a sealing material, so that a semiconductor device is provided.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は、放熱板に形成した
複数の爪片により、リードフレーム本体部のダイパッド
を嵌合載置して固定した放熱板付リードフレームと、こ
れを用いた半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a heat dissipation plate-equipped lead frame in which a die pad of a lead frame main body is fitted and mounted and fixed by a plurality of claw pieces formed on the heat dissipation plate, and a semiconductor device using the same. .

【0002】[0002]

【従来の技術】近年、半導体集積回路の多機能化、高集
積化に伴って半導体チップサイズおよびこれを支持する
ダイパッドも大型化する一方、パッケージの外観サイズ
の小型化により、パッケージに対するダイパッドの占有
面積比が拡大し、ダイパッドと封止樹脂との密着性が悪
く、また、熱膨張係数も異なることから、半導体チップ
の発熱による継続的な熱ストレスが加わるとダイパッド
と封止樹脂界面での剥離、半導体チップのクラックやパ
ッケージクラック等が発生しており、半導体装置の信頼
性を低下させている。
2. Description of the Related Art In recent years, as semiconductor integrated circuits have become more multifunctional and highly integrated, the semiconductor chip size and the die pad supporting the semiconductor chip have been increased in size, while the external size of the package has been reduced. Since the area ratio is expanded, the adhesion between the die pad and the sealing resin is poor, and the thermal expansion coefficient is different, peeling at the interface between the die pad and the sealing resin will occur if continuous thermal stress is applied by the heat generated by the semiconductor chip. The semiconductor chip is cracked, the package is cracked, etc., and the reliability of the semiconductor device is reduced.

【0003】そこで、特に高出力半導体チップ等の発熱
量の大きいチップを搭載する半導体装置においては、図
4に示すように、鉄ニッケル系あるいは銅系の金属材料
からなる帯状薄板をスタンピング加工法あるいは化学エ
ッチング加工法により所望の形状に成形して形成され
た、リードフレーム1のダイパッド2ならびにインナー
リード3下面に熱導電性の優れた金属製の放熱板4を絶
縁性接着材5を介して固着させ、この放熱板4を有する
リードフレーム1を樹脂パッケージ6に内蔵することに
より、半導体チップ7の発熱を積極的且つ効率的に外部
へ放出し、半導体装置内部での過度の温度上昇を抑制
し、その特性が変化することなく安定した機能を保持さ
せる方法が一般的に実施されている。
Therefore, in a semiconductor device mounted with a chip having a large amount of heat generation such as a high-power semiconductor chip, as shown in FIG. 4, a strip-shaped thin plate made of an iron-nickel-based or copper-based metal material is stamped by a stamping method or A metal heat dissipation plate 4 having excellent thermal conductivity is fixed to the lower surfaces of the die pad 2 and the inner lead 3 of the lead frame 1 by a chemical etching process to form a desired shape, with an insulating adhesive 5 interposed therebetween. By incorporating the lead frame 1 having the heat dissipation plate 4 in the resin package 6, the heat generation of the semiconductor chip 7 is positively and efficiently discharged to the outside, and an excessive temperature rise inside the semiconductor device is suppressed. Generally, a method of maintaining a stable function without changing its characteristics is generally practiced.

【0004】[0004]

【この発明が解決しようとする課題】しかしながら、上
記のような構成の半導体装置においては、リードフレー
ム本体部と放熱板とを固着させる際、前述したように、
両面に熱可塑性あるいは熱硬化性の接着層が形成された
絶縁性接着材を使用しているが、この種の接着材は吸湿
性を持っており、この性質に伴い半導体装置内部に水分
が侵入すると、半導体装置の組立工程時の熱履歴や、半
導体装置の作動に伴う温度上昇により、前記水分が気化
膨張し、気泡やガスを発生させて樹脂界面での剥離、パ
ッケージのクラック、そして内部リードの腐食を引き起
こしており、半導体装置の機能特性、信頼性が著しく損
なわれている。
However, in the semiconductor device having the above-mentioned structure, when the lead frame body and the heat sink are fixed to each other, as described above,
An insulating adhesive material with a thermoplastic or thermosetting adhesive layer formed on both sides is used.This kind of adhesive material has hygroscopicity, and this property allows moisture to penetrate into the semiconductor device. Then, the heat history during the assembly process of the semiconductor device and the temperature rise accompanying the operation of the semiconductor device cause the moisture to evaporate and expand, generating bubbles and gas to cause peeling at the resin interface, package cracks, and internal leads. Cause the corrosion of the semiconductor device, and the functional characteristics and reliability of the semiconductor device are significantly impaired.

【0005】また、この種の接着材は非常に高価である
ため、製造コストや製品価格の高騰を招く要因ともなっ
ている。本発明は前記の実情に鑑みてなされたもので、
前記接着材に起因する半導体装置内部での吸湿現象を防
止して、十分な耐湿性を確保することにより、長期に亘
り安定した機能と信頼性を維持することのできる、優れ
た品質を備えた半導体装置を提供することを目的とす
る。
Further, since this kind of adhesive material is very expensive, it also causes a rise in manufacturing cost and product price. The present invention has been made in view of the above circumstances,
By preventing the moisture absorption phenomenon inside the semiconductor device due to the adhesive material and ensuring sufficient moisture resistance, it is possible to maintain stable function and reliability for a long period of time, and it has excellent quality. An object is to provide a semiconductor device.

【0006】[0006]

【課題を解決するための手段】上記目的を達成する本発
明の特徴とするところは、半導体チップを搭載するダイ
パッドと、その外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、、前記放熱板には複数の爪片が形成され
て高さ方向に切曲げられており、その内側面域にダイパ
ッドを嵌合載置し、該爪片先端部の曲折にて前記ダイパ
ッドを固定することにより、リードフレーム本体部と放
熱板とが固着一体化したことを特徴とする放熱板付リー
ドフレームと、前記ダイパッドに固着搭載された半導体
チップと、前記インナーリードとがボンディングワイヤ
ーで接続され、前記インナーリード以内を封止材料によ
りパッケージした半導体装置にある。
The features of the present invention for achieving the above object are that a die pad on which a semiconductor chip is mounted, a plurality of inner leads provided on the outer periphery of the die pad, and extending from the inner leads. In a lead frame including a lead frame main body portion having an outer lead and a heat radiating plate that adheres to a lower surface of the die pad to dissipate heat, a plurality of claw pieces are formed on the heat radiating plate in a height direction. The lead frame main body and the heat sink are fixed and integrated by fitting and mounting the die pad on the inner side surface area and fixing the die pad by bending the tip of the claw piece. The lead frame with a heat sink, the semiconductor chip fixedly mounted on the die pad, and the inner lead are connected by a bonding wire. Certain within the inner lead to the semiconductor device package by the sealing material.

【0007】[0007]

【発明の実施の形態】本発明では、放熱板に形成されて
高さ方向に切曲げられた複数の爪片の内側面域にダイパ
ッドを嵌合載置し、該爪片先端部の曲折にて前記ダイパ
ッドを固定することにより、リードフレーム本体部と放
熱板とが固着一体化しているため、リードフレーム本体
部と放熱板との固着に際し、何ら接着材を使用しておら
ず、この接着材による半導体装置内部での吸湿現象が起
こることがない。従って、従来のように吸湿に起因して
いた樹脂界面の剥離、パッケージクラック、リード腐食
等の種々問題も発生することがない。
BEST MODE FOR CARRYING OUT THE INVENTION In the present invention, a die pad is fitted and mounted on the inner side surface regions of a plurality of claw pieces formed on a heat dissipation plate and cut and bent in the height direction to bend the tip ends of the claw pieces. Since the lead frame main body and the heat sink are fixed and integrated by fixing the die pad with the die pad, no adhesive is used to fix the lead frame main body and the heat sink. Therefore, the phenomenon of moisture absorption inside the semiconductor device does not occur. Therefore, various problems such as peeling of the resin interface, package cracks, lead corrosion, etc., which have been caused by moisture absorption as in the past, do not occur.

【0008】[0008]

【実施例】以下、本発明の一実施例を図面に基づいて説
明する。図1(a)は本発明によるリードフレーム本体
部の平面図。同図(b)はその断面図。同図(c)は放
熱板の平面図。同図(d)はその断面図。図2(a)は
本発明による放熱板付リードフレームの平面図。同図
(b)はその断面図。図3は本発明による半導体装置の
断面図。図4は従来技術による放熱板付リードフレーム
を用いた半導体装置のの断面図である。なお、図1、図
2、図3の説明において、従来技術と同一または相当部
分には、同一符号を付してある。
An embodiment of the present invention will be described below with reference to the drawings. FIG. 1A is a plan view of a lead frame main body portion according to the present invention. The same figure (b) is the sectional view. FIG. 3C is a plan view of the heat sink. The same figure (d) is the sectional view. FIG. 2A is a plan view of a lead frame with a heat sink according to the present invention. The same figure (b) is the sectional view. FIG. 3 is a sectional view of a semiconductor device according to the present invention. FIG. 4 is a cross-sectional view of a semiconductor device using a lead frame with a heat sink according to the prior art. In addition, in the description of FIGS. 1, 2, and 3, the same or corresponding portions as those of the conventional technique are denoted by the same reference numerals.

【0009】図1において、放熱板4の上面側には高さ
方向に切曲げ加工を施された複数の爪片8が形成されて
おり、該爪片8の内側面域9にリードフレーム本体部1
0のダイパッド2が嵌合して載置される。そして前記爪
片8の先端部を嵌合している前記ダイパッド2の中心方
向に向かって折り曲げると、前記ダイパッド2が固定さ
れ、リードフレーム本体部10と放熱板4とが固着一体
化した図2に示す本発明による放熱板付リードフレーム
11を完成させ得ることができる。
In FIG. 1, a plurality of claw pieces 8 which are cut and bent in the height direction are formed on the upper surface side of the heat dissipation plate 4, and the lead frame main body is formed in an inner side surface area 9 of the claw pieces 8. Part 1
The die pad 2 of 0 is fitted and mounted. When the tip of the claw piece 8 is bent toward the center of the fitted die pad 2, the die pad 2 is fixed, and the lead frame body 10 and the heat sink 4 are fixedly integrated. It is possible to complete the lead frame 11 with a heat sink according to the present invention shown in FIG.

【0010】本発明では、リードフレーム本体部10と
放熱板4とを固着させる際、前述したように前記放熱板
4に形成した爪片8によりダイパッド2を載置固定して
いるため、従来技術のような接着材を使用する必要がな
く、該接着材が持つ吸湿性に起因して発生していた樹脂
界面での剥離、パッケージクラック、内部リードの腐食
等を発生させることがない。
According to the present invention, when the lead frame body 10 and the heat sink 4 are fixed, the die pad 2 is placed and fixed by the claw pieces 8 formed on the heat sink 4 as described above. It is not necessary to use such an adhesive as described above, and peeling at the resin interface, package cracks, corrosion of internal leads, etc., which has occurred due to the hygroscopicity of the adhesive does not occur.

【0011】また、前記爪片8によるリードフレーム本
体部10と放熱板4との載置固定は、樹脂封止時の圧力
あるいは移動時等の振動を受けても強固な密着状態を保
つことができる。
Further, the lead frame main body 10 and the heat radiating plate 4 are mounted and fixed by the claw pieces 8 in such a manner that a strong contact state can be maintained even when subjected to pressure during resin sealing or vibration such as movement. it can.

【0012】次に、図3に示す本発明による半導体装置
は、前記放熱板付リードフレーム11のダイパッド2上
面に半導体チップ7を固着搭載し、その端子と前記ダイ
パッド2外周に設けられた複数のインナーリード3とを
ボンディングワイヤー12を介して接続し、次いで、前
記インナーリード3以内となる前記ダイパッド2と、前
記半導体チップ7および前記ボンディングワイヤー12
とを封止樹脂によってパッケージして、その後、パッケ
ージ6から突出するアウターリード13を所望の形状に
折り曲げて完成させ得ることができる。
Next, in the semiconductor device according to the present invention shown in FIG. 3, the semiconductor chip 7 is fixedly mounted on the upper surface of the die pad 2 of the heat dissipation plate lead frame 11, and its terminals and a plurality of inner pads provided on the outer periphery of the die pad 2 are mounted. The lead 3 is connected via a bonding wire 12, and then the die pad 2 within the inner lead 3, the semiconductor chip 7 and the bonding wire 12 are connected.
Can be packaged with a sealing resin, and then the outer leads 13 projecting from the package 6 can be bent into a desired shape to complete.

【0013】前記の実施例では、リードフレーム本体部
10および放熱板4共に、その材質は銅合金を用いたも
のを夫々組合せているが、使用する材質とその組合せは
これに限るものではなく、例えばリードフレーム本体部
25には、比較的に半導体チップと熱膨張係数が近い4
2アロイ材を用い、放熱板4には銅合金あるいはアルミ
ニウム合金の材質を用いる等、多様な材質の組合せにお
いて製造することができる。
In the above-described embodiment, the lead frame body 10 and the heat sink 4 are made of copper alloy, but the material and the combination are not limited to this. For example, the lead frame body 25 has a coefficient of thermal expansion relatively close to that of the semiconductor chip.
It can be manufactured with various combinations of materials, such as using a two-alloy material and using a material of copper alloy or aluminum alloy for the heat dissipation plate 4.

【0014】また、前記の実施例では、放熱板4の上面
に形成された爪片8により、ダイパッド2を嵌合させて
載置固定しているが、この場合に予め爪片8の内側面域
9に例えばAgペースト等の導体層を塗布しておくと、
リードフレーム本体部10と放熱板4との嵌合状態が一
層強固になると共に、固着の際にダイパッド2と放熱板
4との間に隙間が生じず、また、放熱板4への導電性な
らびに放熱性も向上する。
Further, in the above embodiment, the die pad 2 is fitted and mounted and fixed by the claw pieces 8 formed on the upper surface of the heat dissipation plate 4, but in this case, the inner surface of the claw pieces 8 is preliminarily set. If a conductor layer such as Ag paste is applied to the area 9,
The lead frame body 10 and the heat dissipation plate 4 are more firmly fitted to each other, a gap is not created between the die pad 2 and the heat dissipation plate 4 when they are fixed, and the conductivity to the heat dissipation plate 4 is reduced. The heat dissipation is also improved.

【0015】なお、放熱板4に形成された複数の爪片8
は、生産性および製造コストの面から、一般的なプレス
加工法によって形成しているが、形成方法はこれに限る
ものではなく、例えば化学エッチング加工法を用いて形
成してもよく、特に放熱板4に応力の影響を与ることな
く爪片8を形成したい場合は、化学エッチング加工法が
より有効である。
A plurality of claw pieces 8 formed on the heat dissipation plate 4
From the viewpoint of productivity and manufacturing cost, is formed by a general press working method, but the forming method is not limited to this, and it may be formed by, for example, a chemical etching working method. The chemical etching method is more effective when it is desired to form the claw pieces 8 without exerting stress on the plate 4.

【0016】[0016]

【発明の効果】以上のように本発明によれば、放熱板の
上面に形成されて高さ方向に切曲げられた複数の爪片の
内側面域にダイパッドを嵌合させて載置固定することに
より、リードフレーム本体部と放熱板とが固着一体化し
ており、従来技術のような接着材を使用する必要がな
い。従って、この放熱板付リードフレームを用いた半導
体装置では、前記接着材に係る吸湿現象が起こらず、樹
脂界面の剥離、パッケージクラック、内部リードの腐食
等を発生させることがないことから、十分な耐湿性を確
保して長期に亘り安定した機能と信頼性を維持すること
のできる、優れた品質を備えた半導体装置が得られる。
As described above, according to the present invention, the die pad is fitted and fixed on the inner side surface regions of the plurality of claw pieces formed on the upper surface of the heat dissipation plate and cut and bent in the height direction. As a result, the lead frame body and the heat dissipation plate are fixedly integrated with each other, and there is no need to use an adhesive as in the prior art. Therefore, in the semiconductor device using this lead frame with a heat sink, the moisture absorption phenomenon related to the adhesive does not occur, peeling of the resin interface, package cracks, corrosion of the internal leads, etc. do not occur, and sufficient moisture resistance is obtained. It is possible to obtain a semiconductor device having excellent quality capable of ensuring the reliability and maintaining the stable function and reliability for a long period of time.

【図面の簡単な説明】[Brief description of the drawings]

【図1】(a)本発明によるリ−ドフレ−ム本体部の平
面図である。 (b)本発明によるリ−ドフレ−ム本体部の断面図であ
る。 (c)本発明による放熱板の平面図である。 (d)本発明による放熱板の断面図である。
FIG. 1A is a plan view of a lead frame main body according to the present invention. (B) It is sectional drawing of the lead frame main-body part by this invention. (C) A plan view of a heat sink according to the present invention. (D) It is sectional drawing of the heat sink according to this invention.

【図2】(a)本発明による放熱板付リードフレームの
平面図である。 (b)本発明による放熱板付リードフレームの断面図で
ある。
FIG. 2A is a plan view of a lead frame with a heat sink according to the present invention. (B) It is sectional drawing of the lead frame with a heat sink according to this invention.

【図3】本発明による半導体装置の断面図である。FIG. 3 is a sectional view of a semiconductor device according to the present invention.

【図4】従来技術による放熱板付リードフレームを用い
た半導体装置の断面図である。
FIG. 4 is a cross-sectional view of a semiconductor device using a lead frame with a heat sink according to a conventional technique.

【符号の説明】[Explanation of symbols]

1、リードフレーム 2、ダイパッド 3、インナ−リード 4、放熱板 5、絶縁性接着材 6、樹脂パッケージ 7、半導体チップ 8、爪片 9、爪片内側面域 10、リードフレーム本体部 11、放熱板付リードフレーム 12、ボンディングワイヤー 1, lead frame 2, die pad 3, inner lead 4, heat dissipation plate 5, insulating adhesive 6, resin package 7, semiconductor chip 8, claw piece 9, claw piece inner surface area 10, lead frame body 11, heat dissipation Lead frame with plate 12, bonding wire

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 半導体チップを搭載するダイパッドと、
該ダイパッド外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記放熱板には複数の爪片が形成されて
いることを特徴とするリードフレーム。
A die pad on which a semiconductor chip is mounted;
A lead including a lead frame main body portion having a plurality of inner leads provided on the outer periphery of the die pad and outer leads extending from the inner leads, and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat. In the frame, a lead frame, wherein a plurality of claw pieces are formed on the heat dissipation plate.
【請求項2】 放熱板に形成された複数の爪片は、高さ
方向に切曲げられ、その内側面域にダイパッドを嵌合載
置し、該爪片先端部の曲折にて前記ダイパッドを固定す
ることにより、リードフレーム本体部と放熱板とが固着
一体化したことを特徴とする請求項1記載のリードフレ
ーム。
2. A plurality of claw pieces formed on a heat dissipation plate are cut and bent in a height direction, a die pad is fitted and mounted on an inner side surface region of the claw piece, and the die pad is bent by bending the tip end of the claw piece. The lead frame according to claim 1, wherein the lead frame body and the heat sink are fixed and integrated by fixing.
【請求項3】 半導体チップを搭載するダイパッドと、
該ダイパッド外周に設けられた複数のインナーリード
と、該インナーリードから延在するアウターリードとを
有するリードフレーム本体部と、前記ダイパッドの下面
に密着して熱放散を行う放熱板とを具備したリードフレ
ームにおいて、前記放熱板には複数の爪片が形成されて
高さ方向に切曲げられており、その内側面域にダイパッ
ドを嵌合載置し、該爪片先端部の曲折にて前記ダイパッ
ドを固定することにより、リードフレーム本体部と放熱
板とが固着一体化すると共に、前記ダイパッドに固着搭
載された半導体チップと、前記インナーリードとがボン
ディングワイヤーで接続され、前記インナーリード以内
を封止材料によりパッケージした半導体装置。
3. A die pad on which a semiconductor chip is mounted;
A lead including a lead frame main body portion having a plurality of inner leads provided on the outer periphery of the die pad and outer leads extending from the inner leads, and a heat dissipation plate that adheres to the lower surface of the die pad to dissipate heat. In the frame, a plurality of claw pieces are formed on the heat radiating plate and are cut and bent in a height direction, a die pad is fitted and mounted on an inner side surface region thereof, and the die pad is bent by bending the tip end of the claw piece. By fixing the lead frame main body portion and the heat dissipation plate, the semiconductor chip fixedly mounted on the die pad and the inner lead are connected by a bonding wire, and the inside of the inner lead is sealed. Semiconductor device packaged by material.
JP34976595A 1995-12-20 1995-12-20 Lead frame and semiconductor device using it Pending JPH09172127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP34976595A JPH09172127A (en) 1995-12-20 1995-12-20 Lead frame and semiconductor device using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34976595A JPH09172127A (en) 1995-12-20 1995-12-20 Lead frame and semiconductor device using it

Publications (1)

Publication Number Publication Date
JPH09172127A true JPH09172127A (en) 1997-06-30

Family

ID=18405964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP34976595A Pending JPH09172127A (en) 1995-12-20 1995-12-20 Lead frame and semiconductor device using it

Country Status (1)

Country Link
JP (1) JPH09172127A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013253A (en) * 2004-06-28 2006-01-12 Hitachi Cable Precision Co Ltd Lead frame for semiconductor device, and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006013253A (en) * 2004-06-28 2006-01-12 Hitachi Cable Precision Co Ltd Lead frame for semiconductor device, and manufacturing method thereof
JP4578870B2 (en) * 2004-06-28 2010-11-10 日立ケーブルプレシジョン株式会社 Lead frame for semiconductor device and manufacturing method thereof

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