JPH10313081A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

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Publication number
JPH10313081A
JPH10313081A JP13750897A JP13750897A JPH10313081A JP H10313081 A JPH10313081 A JP H10313081A JP 13750897 A JP13750897 A JP 13750897A JP 13750897 A JP13750897 A JP 13750897A JP H10313081 A JPH10313081 A JP H10313081A
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JP
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Application
Patent type
Prior art keywords
plate
adhesive
semiconductor device
heat
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13750897A
Other languages
Japanese (ja)
Inventor
Kenji Katsuki
Saburo Tanabe
田辺三郎
香月謙治
Original Assignee
Mitsui High Tec Inc
株式会社三井ハイテック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PROBLEM TO BE SOLVED: To raise the adhesion of a heat radiating plate to a bonding agent and to increase the adhesive strength of the radiating plate to a radiating fin by a method wherein an oxide film is provided on the region, which comes into contact with the bonding agent, of the radiating plate. SOLUTION: A semiconductor device consists of a needlelike crystal copper oxide film 6 formed on the whole surface of a copper material, a heat radiating plate 8 bonded to a die pad 2 for mounting a semiconductor component 1 via a bonding agent 7, the component 1, the pad 2, wires 3, inner leads 4, a sealing resin 9 for sealing one part of the plate 8 and a radiating fin 11 mounting to one part of the plate 8 and one part of the resin 9 via a bonding agent 10. Heat generated in the component 1 is transferred to the plate 8 via the pad 2 and moreover, is transferred to the fin 11 and is dissipated. In this case, the surface of the region, which comes into contact with the agent 10, of the plate 8 is roughened by the formation of the film 6 and the adhesion of the plate 8 to the agent 10 is increased. Accordingly, the adhesive strength of the plate 8 to the fin 11 is increased.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【発明の属する技術分野】本発明は、放熱板を設けた半導体装置であって、放熱板に放熱フィンを取り付けた半導体装置およびその製造方法に関する。 The present invention relates, there is provided a semiconductor device provided with a heat radiating plate, a semiconductor device and a manufacturing method thereof fitted with a radiating fin to the heat radiating plate.

【0002】 [0002]

【従来の技術】従来、放熱板に放熱フィンを取り付けた半導体装置では、放熱板に接着剤を介して放熱フィンを取り付けていた。 Conventionally, in a semiconductor device with attached heat dissipating fins to the heat dissipation plate, has been attached to the heat radiation fins through the adhesive to the heat radiating plate.

【0003】 [0003]

【発明が解決しようとする課題】しかしながら、放熱板は銅等の金属からなる条材をプレス加工により打ち抜き製作されることが多く、これにより製造された放熱板の表面は面祖度が低いため、接着剤との密着性が悪く、接着剤と放熱板の接着強度が弱かった。 [0007] However, the heat radiating plate are often stamped fabricated by strip member pressing a made of metal such as copper, thereby the surface of the produced heat radiating plate has a low surface its degree , poor adhesion to the adhesive, the adhesive strength between the adhesive radiator plate was weak.

【0004】接着強度が弱いと、放熱フィンに加わる衝撃や半導体装置の熱変化による膨張および収縮により、 [0004] bond strength is weak, due to expansion and contraction due to thermal change of shock and a semiconductor device applied to the heat radiating fins,
放熱板と接着剤が接着面において剥離し、放熱フィンが接着剤と共に半導体装置から剥離してしまうことがあった。 Radiating plate and the adhesive is peeled off the adhesive surface, radiating fin was sometimes peeled off from the semiconductor device with the adhesive.

【0005】本発明は以上の問題を鑑みてなされたもので、放熱板に接着剤を介して放熱フィンを取り付けた半導体装置であって、放熱板と接着剤の密着性を向上させ、放熱板と放熱フィンの接着強度の強い半導体装置を提供することを目的とする。 [0005] The present invention has been made in view of the above problems, a semiconductor device with attached heat radiation fins through the adhesive to the heat radiating plate, to improve the adhesion of the heat sink and the adhesive, the heat radiating plate and to provide a strong semiconductor device adhesive strength of the heat radiating fins and.

【0006】 [0006]

【課題を解決するための手段】本発明の特徴は、放熱板に接着剤を介して放熱フィンを取り付ける半導体装置において、放熱板の接着剤と接する領域に酸化膜を設けたことにある。 Feature of the present invention SUMMARY OF THE INVENTION, in a semiconductor device mounting the radiating fins through the adhesive to the heat radiating plate, in the provision of the oxide film in the region in contact with the adhesive of the heat sink.

【0007】また、他の特徴は、前記酸化膜が、針状結晶の銅酸化膜であることにある。 Further, other features, the oxide film is in is copper oxide needles.

【0008】また、他の特徴は、放熱板に接着剤を介して放熱フィンを取り付ける半導体装置の製造方法であって、放熱板の接着剤と接する領域に酸化膜を形成し、酸化膜を形成した部分と放熱フィンを接着剤を介して接着することにある。 Further, other features, a method of manufacturing a semiconductor device mounting the heat radiating fins via the adhesive to the heat radiating plate, an oxide film is formed in a region in contact with the adhesive of the heat radiating plate, forming an oxide film the a portion radiating fins is to adhere through an adhesive.

【0009】また、他の特徴は、放熱板を銅系の材料から形成し、アルカリ溶液の中に浸漬し、揺動することにより酸化膜を形成することにある。 Further, other features, the heat radiating plate is formed from a material of copper-based, and immersed in an alkali solution is to form an oxide film by rocking.

【0010】 [0010]

【発明の実施形態】以下、本発明の実施形態について、 [Embodiment of the Invention] Hereinafter, embodiments of the present invention,
図面を参照しつつ詳細に説明する。 With reference to the accompanying drawings will be described in detail.

【0011】本発明による半導体装置の実施形態は、図1に示すように、半導体素子1、半導体素子を搭載するダイパッド2、半導体素子1とワイヤー3を介して導通するインナーリード4、インナーリード4に連なり外部導通端子となるアウターリード5、銅材からなりその表面全体に針状結晶の銅酸化膜6が形成され半導体素子1 [0011] Embodiments of a semiconductor device according to the present invention, as shown in FIG. 1, the semiconductor element 1, the die pad 2 of a semiconductor element is mounted, the inner lead 4 which conducts through the semiconductor element 1 and the wire 3, the inner lead 4 the contiguous outer leads 5 serving as external connecting terminals, the semiconductor device 1 copper oxide film 6 of the needle crystals is formed on the entire surface of copper material
を搭載するダイパッド2に接着剤7を介して接着された放熱板8、半導体素子1、ダイパッド2、ワイヤー3、 Bonded through an adhesive 7 to the die pad 2 for mounting the the radiator plate 8, the semiconductor element 1, the die pad 2, the wire 3,
インナーリード4、放熱板8の一部を封止する封止樹脂9、放熱板8の一部および封止樹脂9の一部に接着剤1 Inner leads 4, the sealing resin 9 for sealing a portion of the heat sink 8, the adhesive 1 part of part of the heat sink 8 and the sealing resin 9
0を介して取り付けられた放熱フィン11からなる半導体装置である。 0 is a semiconductor device comprising a radiation fin 11 attached via.

【0012】また、本実施形態による半導体装置の放熱構造は、半導体素子1に発生した熱がダイパッド2を介して放熱板8に伝わり、放熱板8に伝わった熱は放熱フィン11に伝わり、放熱フィン11より放熱される構造となっている。 Further, heat radiation structure of a semiconductor device according to the present embodiment is transmitted to the heat radiating plate 8 heat generated in the semiconductor element 1 via the die pad 2, the heat transferred to the heat radiating plate 8 is transmitted to the heat radiation fins 11, radiator and it has a structure that is radiating from fins 11.

【0013】放熱板8の表面全体に針状結晶の銅酸化膜6が形成されているので、放熱板8の接着剤10と接する領域が粗面化され、放熱板8と接着剤10の密着性が良くなり、放熱板8と放熱フィン11の接着強度が強くなる。 [0013] Since the copper oxide film 6 of the needle crystal on the entire surface of the heat radiating plate 8 is formed, a region in contact with the adhesive 10 of the heat sink 8 is roughened, the adhesion of the heat sink 8 and the adhesive 10 sex better, the adhesive strength of the heat sink 8 and the radiating fins 11 is increased.

【0014】また、銅酸化膜6は放熱板8の表面全体に形成されているので、放熱板8と封止樹脂9の密着性も良くなる効果がある。 Further, the copper oxide film 6 is so formed on the entire surface of the heat radiating plate 8, there is also better effect adhesion of the heat sink 8 and the sealing resin 9.

【0015】また、本発明による半導体装置の製造方法の実施形態は、ダイパッド2、ダイパッドを保持するサポートバー、インナーリード4、アウターリード5、およびダムバーを設けたリードフレームを準備し、銅系の金属を加工することにより放熱板8を形成し、該放熱板8をアルカリ溶液の中に浸漬して揺動することにより放熱板8の表面全面に針状結晶の銅酸化膜6を形成し、半導体素子1をダイパッド2に搭載し、ワイヤー3により半導体素子1の導通部とインナーリード4を接続し、ダイパッド2の半導体素子1搭載面と異なる面に接着剤7 Further, an embodiment of a method of manufacturing a semiconductor device according to the invention, the die pad 2, the support bar, the inner lead 4 that holds the die pad, outer leads 5, and preparing a lead frame having a dam bar, the copper-based the radiating plate 8 is formed by processing a metal, to form a copper oxide film 6 of the needle-like crystals on the whole surface of the heat sink 8 by swinging by immersing the heat radiating plate 8 in an alkali solution, the semiconductor device 1 is mounted on the die pad 2, to connect the conductive portion and the inner leads 4 of the semiconductor element 1 by a wire 3, the adhesive 7 in the semiconductor element 1 mounting surface of the die pad 2 with different surfaces
を介して銅酸化膜6を形成した放熱板8を接着し、半導体素子1、ダイパッド2、ワイヤー3、インナーリード4、および放熱板8の一部を封止樹脂9により樹脂封止し、ダムバーを除去し、樹脂封止領域外のサポートバーを除去し、封止樹脂から放熱板8が露出している面に接着剤10を介して放熱フィン11を接着することにより半導体装置を製造する半導体装置の製造方法である。 Through bonding the heat radiating plate 8 formed of copper oxide film 6, the semiconductor device 1, the die pad 2, the wire 3, the inner lead 4, and a portion of the heat sink 8 resin-sealed by the sealing resin 9, dam bar It was removed, to remove the resin sealing region outside of the support bar, to produce a semiconductor device by adhering the heat radiating fin 11 through an adhesive 10 on a surface heat dissipation plate 8 is exposed from the sealing resin a semiconductor device is a method of manufacturing.

【0016】本実施形態において、放熱板8の表面全体に針状銅酸化膜6を設けたが、これは任意であり、放熱フィンと接着する領域にのみ銅酸化膜6を設けてもよいし、放熱フィンと接着する領域を含む一部の領域にのみ銅酸化膜6を設けてもよい。 In the present embodiment, is provided with the needle copper oxide film 6 on the entire surface of the heat sink 8, which is optional, the may be provided a copper oxide film 6 only in the region bonded to the heat radiating fins , it may be provided copper oxide film 6 only in a partial area including an area for bonding the heat radiating fins.

【0017】また、本実施形態において、放熱板8を銅材より形成したが、これは任意であり、放熱性の良い金属使用すればよい。 Further, in this embodiment, the heat radiating plate 8 is formed from copper material, which is optional, it may be a good heat radiating property metal used.

【0018】また、本実施形態において、放熱板8の表面に針状結晶の銅酸化膜6を設けたが、これは任意であり、その他の酸化膜でもよい。 Further, in the present embodiment is provided with the copper oxide film 6 of the needle-like crystals on the surface of the heat sink 8, which is optional, it may be other oxide film.

【0019】また、本実施形態において、放熱板8の表面に銅酸化膜6を設けたが、同様に放熱フィン11の接着剤10と接する領域に酸化膜を設ける構成にすれば、 Further, in the present embodiment, the copper oxide film 6 provided on the surface of the heat sink 8, if the configuration in which the oxide film is a region in contact with the adhesive 10 likewise radiating fins 11,
放熱フィン11と接着剤の密着性が良くなり、放熱板8 Radiating fin 11 and is good adhesion of the adhesive, the heat radiating plate 8
と放熱フィン11の接着強度を強くすることができ、放熱板8と放熱フィン11両方の接着剤10と接する領域に銅酸化膜を設けると放熱板8と放熱フィン11の接着強度がさらに強くなる。 Radiating the adhesive strength of the fins 11 can be a stronger adhesive strength of the heat sink 8 and the heat radiating fins 11 in both a region in contact with the adhesive 10 provided copper oxide film and the heat sink 8 radiating fin 11 is further strongly with .

【0020】 [0020]

【発明の効果】以上の本発明の半導体装置によれば、放熱板に接着剤を介して放熱フィンを取り付ける半導体装置において、放熱板の接着剤を塗布する領域に酸化膜が設けられているので、放熱板の表面が粗面化され放熱板と放熱フィンの接着において、放熱板と接着剤の密着性を向上させることができ、それにより放熱板と放熱フィンの接着強度を強くすることができる。 According to the semiconductor device of the present invention described above, according to the present invention, a semiconductor device mounting the heat radiating fins via the adhesive to the heat radiating plate, the oxide film is provided in a region for applying an adhesive of the heat radiating plate the surface of the heat radiating plate is roughened in the adhesion of the heat radiation fins and the heat radiating plate, the heat radiating plate and can improve adhesion of the adhesive, thereby to increase the adhesive strength of the heat radiating fins and the radiating plate .

【0021】また、前記酸化膜を針状結晶の銅酸化膜としたことにより、放熱板の表面が特に粗面化され、放熱板と接着剤の密着性がさらに向上し、放熱板と放熱フィンの接着強度をさらに強くすることができる。 Further, by the oxide film and the copper oxide film needles, the surface of the heat radiating plate is particularly roughened, the heat radiating plate adhesion of the adhesive to further improve the heat dissipation fins and the heat sink the adhesive strength of the can further strengthen.

【0022】また、本発明の半導体装置の製造方法によれば、放熱板の接着剤と接する領域が粗面で、放熱板と接着剤の密着性をが良く、放熱板と放熱フィンの接着強度の強い半導体装置を提供することができる。 Further, according to the manufacturing method of the semiconductor device of the present invention, in the region rough surface in contact with the adhesive of the heat sink, good adhesion of the heat sink with adhesive, the adhesive strength of the heat radiating fins and the radiating plate it is possible to provide a strong semiconductor device.

【0023】また、放熱板を銅系の材料から形成し、アルカリ溶液の中に浸漬し、揺動することにより酸化膜を形成する半導体装置の製造方法により、放熱板の接着剤と接する領域が針状結晶の銅酸化膜となり、特に粗面化され、放熱板と接着剤の密着性がさらに向上し、放熱板と放熱フィンの接着強度がさらに強い半導体装置を提供することができる。 Further, the heat radiating plate is formed from a material of copper-based, and immersed in an alkali solution, a method of manufacturing a semiconductor device for forming an oxide film by swinging, the region in contact with the adhesive of the heat radiating plate become copper oxide needles, particularly roughened, the radiator plate and to adhesion, further improvement in the adhesive, the adhesive strength of the heat radiating fins and the radiating plate can be provided stronger semiconductor device.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の実施例を示す断面図である。 1 is a cross-sectional view showing an embodiment of the present invention.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 半導体素子 2 ダイパッド 3 ワイヤー 4 インナーリード 5 アウターリード 6 銅酸化膜 7 接着剤 8 放熱板 9 封止樹脂 10 接着剤 11 放熱フィン 1 semiconductor element 2 die pad 3 wire 4 inner leads 5 the outer lead 6 copper oxide film 7 adhesive 8 radiating plate 9 sealing resin 10 adhesive 11 radiating fins

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 放熱板に接着剤を介して放熱フィンを取り付ける半導体装置であって、放熱板の接着剤と接する領域に酸化膜を設けたことを特徴とする半導体装置。 1. A semiconductor device for mounting a radiation fin via the adhesive to the heat radiating plate, a semiconductor device which is characterized by providing an oxide layer on a region in contact with the adhesive of the heat sink.
  2. 【請求項2】 前記酸化膜は、針状結晶の銅酸化膜であることを特徴とする請求の範囲1記載の半導体装置。 Wherein said oxide film, a semiconductor device according to claim 1, wherein, characterized in that a copper oxide film needles.
  3. 【請求項3】 放熱板に接着剤を介して放熱フィンを取り付ける半導体装置の製造方法であって、放熱板の接着剤と接する領域に酸化膜を形成し、酸化膜を形成した部分と放熱フィンを接着剤を介して接着することを特徴とする半導体装置の製造方法。 3. A method of manufacturing a semiconductor device mounting the heat radiating fins via the adhesive to the heat radiating plate, the heat radiation fins and the oxide film is formed on a region in contact with the adhesive, to form an oxide film portion of the heat sink the method of manufacturing a semiconductor device characterized by bonding through an adhesive.
  4. 【請求項4】 前記放熱板を銅系の材料から形成し、前記酸化膜は放熱板をアルカリ溶液の中に浸漬し、揺動することにより形成することを特徴とする請求の範囲3記載の半導体装置の製造方法。 The method according to claim 4, wherein the heat radiating plate is formed of a material of copper-based, the oxide film by immersing the heat sink in the alkaline solution, in the range 3 wherein claims, characterized in that formed by oscillating the method of manufacturing a semiconductor device.
JP13750897A 1997-05-12 1997-05-12 Semiconductor device and manufacture thereof Pending JPH10313081A (en)

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JP13750897A JPH10313081A (en) 1997-05-12 1997-05-12 Semiconductor device and manufacture thereof

Publications (1)

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JPH10313081A true true JPH10313081A (en) 1998-11-24

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1480270A3 (en) * 2003-05-22 2005-07-13 Shinko Electric Industries Co., Ltd. Packaging component and semiconductor package
US7294912B2 (en) 2004-08-06 2007-11-13 Denso Corporation Semiconductor device
JP2008270551A (en) * 2007-04-20 2008-11-06 Nichicon Corp Positive thermistor apparatus and method of manufacturing the same
US9230878B2 (en) 2013-04-12 2016-01-05 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Integrated circuit package for heat dissipation

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1480270A3 (en) * 2003-05-22 2005-07-13 Shinko Electric Industries Co., Ltd. Packaging component and semiconductor package
US7190057B2 (en) 2003-05-22 2007-03-13 Shinko Electric Industries Co., Ltd. Packaging component and semiconductor package
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