JP2009010208A - Compound lead frame and semiconductor device using compound lead frame - Google Patents

Compound lead frame and semiconductor device using compound lead frame Download PDF

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JP2009010208A
JP2009010208A JP2007170802A JP2007170802A JP2009010208A JP 2009010208 A JP2009010208 A JP 2009010208A JP 2007170802 A JP2007170802 A JP 2007170802A JP 2007170802 A JP2007170802 A JP 2007170802A JP 2009010208 A JP2009010208 A JP 2009010208A
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lead frame
heat sink
caulked
composite
pad
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JP5096812B2 (en
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Yasuaki Matsuyama
康明 松山
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Mitsui High Tec Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a compound lead frame not causing cracks and peeling of resin in semiconductor devices and superior in reliability while being made smaller in size, higher in speed and lower in cost, wherein a heat radiating plate is not peeled but being kept firmly bonded to a lead frame, even the lead frame and the heat radiation plate are subjected to repeated temperature rises and temperature falls, and a semiconductor device using the same. <P>SOLUTION: The compound lead frame 10 formed by bonding together the lead frame 11 and the heat radiating plate 12 by caulking, in which the heat radiating plate 12 is bonded to a pad 17 of the lead frame 11 by caulking, and viaholes 22 and 27 are formed through the pad 17 and heat radiating plate 12 bonded together by cauking, for introducing a sealing resin 31 passing through them; and the semiconductor device 29 using the compound lead frame 10, are provided. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、リードフレームに放熱板がかしめ結合された複合リードフレーム及びこの複合リードフレームを用いた半導体装置に関する。 The present invention relates to a composite lead frame in which a heat sink is caulked to a lead frame, and a semiconductor device using the composite lead frame.

半導体装置は高速化（高周波化）、小型化、低コスト化を要請され、放熱性がすぐれた小型の半導体装置が提案されている。放熱性をよくするには放熱板が、リードフレームを介して半導体装置に取付けられ、この放熱板の一面が封止樹脂から露出している。
一方、放熱板はリードフレームに接着テープにより設けられるが、接着テープは吸湿性があって、樹脂封止した後、半導体装置としての使用時の温度上昇によって吸湿分が気化、膨張し、封止樹脂に亀裂や剥離を生じる。特に、小型化のために樹脂封止パッケージを薄型にする場合にはこれが顕著になる。また、接着テープはコスト高をもたらす。 Semiconductor devices are required to have high speed (high frequency), small size, and low cost, and small semiconductor devices with excellent heat dissipation have been proposed. In order to improve heat dissipation, a heat sink is attached to the semiconductor device via a lead frame, and one surface of the heat sink is exposed from the sealing resin.
On the other hand, the heat sink is provided on the lead frame with adhesive tape. The adhesive tape is hygroscopic, and after sealing with resin, the moisture absorption vaporizes and expands due to temperature rise during use as a semiconductor device. Cracks and peeling occur in the resin. This is particularly noticeable when the resin-sealed package is made thin for miniaturization. Moreover, the adhesive tape brings about high cost.

このような事情から、例えば、特許文献１に記載のリードフレーム及び半導体装置が提案されている。この特許文献１に記載の複合リードフレームを図７（Ａ）〜（Ｄ）に示すが、図７（Ａ）、（Ｂ）に示すように、リード６０に対して中央のパッド６１が下位置にあるリードフレーム６２の前記パッド６１に複数のかしめ突起６３を形成し、図７（Ｃ）、（Ｄ）に示す放熱板６４の所定位置にかしめ穴６５を形成して、かしめ手段によって放熱板６４をリードフレーム６２に結合することがなされている。 Under such circumstances, for example, a lead frame and a semiconductor device described in Patent Document 1 have been proposed. The composite lead frame described in Patent Document 1 is shown in FIGS. 7A to 7D. As shown in FIGS. 7A and 7B, the center pad 61 is positioned below the lead 60. FIG. A plurality of caulking protrusions 63 are formed on the pad 61 of the lead frame 62, and a caulking hole 65 is formed at a predetermined position of the heat dissipating plate 64 shown in FIGS. 7C and 7D. 64 is coupled to the lead frame 62.

特開平９−１２９８１３号公報Japanese Patent Laid-Open No. 9-129913

しかしながら、特許文献１記載のリードフレーム及びその半導体装置の技術を用いて、
薄型の半導体装置を製造する場合、樹脂封止している樹脂に剥離を生じるおそれがある。
また、リードフレームと放熱板は一般に板厚が異なり、放熱板が厚く、リードフレームが薄いことから、温度上昇による熱膨張の差に起因してリードフレームと放熱板の間で剥がれが発生することがある。 However, using the technology of the lead frame and its semiconductor device described in Patent Document 1,
In the case of manufacturing a thin semiconductor device, there is a possibility that peeling occurs in the resin which is sealed with resin.
In addition, the lead frame and the heat sink generally have different thicknesses, and the heat sink is thick and the lead frame is thin, so peeling may occur between the lead frame and the heat sink due to the difference in thermal expansion due to temperature rise. .

本発明はかかる事情に鑑みてなされたもので、小型化、高速化、低コスト化を図りながら半導体装置に樹脂の亀裂や剥離が生ぜず信頼性がすぐれ、且つ、リードフレームと放熱板が繰り返して温度上昇及び降下を受けても放熱板が剥がれず、強く結合した複合リードフレーム及びこれを用いた半導体装置を提供することを目的とする。 The present invention has been made in view of such circumstances, and the semiconductor device is excellent in reliability without cracking or peeling of the resin while reducing the size, increasing the speed, and reducing the cost, and the lead frame and the heat sink are repeated. Accordingly, an object of the present invention is to provide a composite lead frame and a semiconductor device using the same, in which the heat sink is not peeled off even if the temperature rises and falls.

前記目的に沿う第１の発明に係る複合リードフレームは、リードフレームに放熱板がかしめ結合された複合リードフレームにおいて、
前記リードフレームのパッドに前記放熱板がかしめ結合され、該かしめ結合したパッドと前記放熱板を通して貫通し、封止樹脂が（通して）入り込む導通孔が形成されている。 The composite lead frame according to the first invention that meets the above object is a composite lead frame in which a heat sink is caulked and coupled to the lead frame.
The heat radiating plate is caulked and coupled to the pad of the lead frame, and a conduction hole is formed through the caulking and bonding pad and the heat radiating plate so that the sealing resin enters (through).

また、第２の発明に係る複合リードフレームは、リードフレームに放熱板がかしめ結合された複合リードフレームにおいて、
前記リードフレームの複数の支持リードに前記放熱板がかしめ結合され、該かしめ結合した複数の前記支持リードのそれぞれと前記放熱板を通して貫通し、封止樹脂が（通して）入り込む導通孔がそれぞれ形成されている。 The composite lead frame according to the second invention is a composite lead frame in which a heat sink is caulked and coupled to the lead frame.
The heat sink is caulked and coupled to the plurality of support leads of the lead frame, and a plurality of the caulking coupled support leads and through holes through the heat dissipating plate are formed, and through holes through which sealing resin enters (through) are formed. Has been.

なお、第１、第２の発明に係る複合リードフレームにおいて、前記リードフレームと前記放熱板とのかしめ結合は、前記リードフレームの所定位置に設けられた貫通孔に前記放熱板の上部に設けられたかしめ突起が嵌入して形成されているものであってもよいし、従来のように、リードフレームに形成した半抜き突起を放熱板の上部に設けたかしめ穴に嵌入させてもよい。 In the composite lead frame according to the first and second inventions, the caulking coupling between the lead frame and the heat radiating plate is provided at an upper portion of the heat radiating plate in a through hole provided at a predetermined position of the lead frame. Caulking protrusions may be inserted and formed, or half-extruded protrusions formed on the lead frame may be inserted into the caulking holes provided on the upper portion of the heat radiating plate as in the prior art.

第３の発明に係る半導体装置は、リードフレームに放熱板がかしめ結合された複合リードフレームに半導体チップを搭載し、該半導体チップの電極とリードを電気的に接続して樹脂封止した半導体装置において、
前記リードフレームのパッドに前記放熱板がかしめ結合されていると共に、該パッドと前記放熱板を通して貫通した導通孔が形成され、前記パッドに搭載された前記半導体チップの電極と前記リードが電気的に接続され、前記放熱板の下面を露出して前記半導体チップ及び前記リードが樹脂封止され、前記放熱板と前記パッドの前記導通孔に封止樹脂が（通して）入り込んでいる。 According to a third aspect of the present invention, there is provided a semiconductor device in which a semiconductor chip is mounted on a composite lead frame in which a heat sink is caulked and joined to a lead frame, and the electrodes and leads of the semiconductor chip are electrically connected and sealed with a resin. In
The heat sink is caulked to the pad of the lead frame, and a conduction hole is formed through the pad and the heat sink to electrically connect the electrode of the semiconductor chip mounted on the pad and the lead. The semiconductor chip and the lead are resin-sealed by exposing the lower surface of the heat radiating plate, and sealing resin enters (through) the conduction holes of the heat radiating plate and the pad.

そして、第４の発明に係る半導体装置は、リードフレームに放熱板がかしめ結合された複合リードフレームに半導体チップを搭載し、該半導体チップの電極とリードを電気的に接続し、樹脂封止した半導体装置において、
前記リードフレームの複数の支持リードに前記放熱板がかしめ結合されていると共に、該支持リードと前記放熱板を通して貫通した導通孔が形成され、前記放熱板に搭載された前記半導体チップの電極と前記リードが電気的に接続され、前記放熱板の下面を露出して、前記半導体チップ及び前記リードが樹脂封止され、前記放熱板と前記支持リードの前記導通孔に封止樹脂が（通して）入り込んでいる。 In the semiconductor device according to the fourth aspect of the present invention, a semiconductor chip is mounted on a composite lead frame in which a heat sink is caulked and bonded to the lead frame, the electrodes of the semiconductor chip and the leads are electrically connected, and the resin is sealed. In semiconductor devices,
The heat sink is caulked and coupled to a plurality of support leads of the lead frame, and a conduction hole penetrating through the support lead and the heat sink is formed, and the electrode of the semiconductor chip mounted on the heat sink and the A lead is electrically connected, the lower surface of the heat sink is exposed, the semiconductor chip and the lead are resin-sealed, and a sealing resin is passed through the conduction hole of the heat sink and the support lead It has entered.

請求項１及びこれに従属する請求項３記載の複合リードフレームによると、リードフレームのパッドに放熱板がかしめ結合され、且つ、パッドと放熱板を通して貫通し樹脂封止の樹脂が入り込む導通孔が形成されているので、接着テープが不要でコストを低下しながら、導通孔には樹脂封止した樹脂が入り込んでパッドと放熱板の結合をより高めると共に、樹脂と複合リードフレームの接合強度が増し、樹脂の剥離や亀裂を防止する。この効果は薄く樹脂封止し、放熱板の下面を露出した半導体装置を製造する場合に顕著にあらわれる。 According to the composite lead frame of claim 1 and claim 3 dependent thereon, the heat sink is caulked and coupled to the pad of the lead frame, and the conduction hole through which the resin sealing resin penetrates through the pad and the heat sink As it is formed, adhesive tape is not required and the cost is reduced, while resin-sealed resin enters the conduction hole to increase the bonding between the pad and the heat sink, and the bonding strength between the resin and the composite lead frame increases. Prevents resin peeling and cracking. This effect is conspicuous when manufacturing a semiconductor device that is thinly resin-sealed and exposes the lower surface of the heat sink.

請求項２及びこれに従属する請求項３記載の複合リードフレームによると、リードフレームの複数の支持リードに放熱板がかしめ結合され、且つ、支持リードのそれぞれと放熱板を貫通した導通孔が形成されているので、導通孔には樹脂封止した樹脂が通して入り込み、請求項１と同様な効果が奏される。 According to the composite lead frame of claim 2 and dependent claim 3, the heat sink is caulked and coupled to the plurality of support leads of the lead frame, and a conduction hole is formed through each of the support leads and the heat sink. Therefore, the resin-sealed resin passes through the conduction hole, and the same effect as in the first aspect can be obtained.

特に、請求項３記載の複合リードフレームにおいては、リードフレームと放熱板とのかしめ結合は、リードフレームの所定位置に設けられた貫通孔に放熱板の上部に設けられたかしめ突起が嵌入して形成されているので、かしめ突起の長さをリードフレームの厚みより厚くして上端を潰すことによって、リードフレームと放熱板の結合がより強固になる。 In particular, in the composite lead frame according to claim 3, the caulking connection between the lead frame and the heat radiating plate is performed by inserting a caulking protrusion provided at an upper portion of the heat radiating plate into a through hole provided at a predetermined position of the lead frame. Since it is formed, the length of the caulking protrusion is made thicker than the thickness of the lead frame and the upper end is crushed, thereby further strengthening the coupling between the lead frame and the heat sink.

請求項４、５記載の半導体装置は、リードフレームと放熱板がかしめ結合されていると共に、リードフレームと放熱板を貫通する導通孔が設けられているので、樹脂封止時に、この導通孔に封止樹脂が通して入り込み、封止樹脂とリードフレーム及び放熱板との接合強度が高まる。これによって、薄型で放熱性がすぐれていながら、封止樹脂に亀裂や剥離が発生せず、またリードフレームと放熱板が温度上昇と降下を繰り返し受けても剥がれず、信頼性がすぐれる。 In the semiconductor device according to claims 4 and 5, the lead frame and the heat radiating plate are caulked and coupled, and a conduction hole penetrating the lead frame and the heat radiating plate is provided. The sealing resin passes through and the bonding strength between the sealing resin, the lead frame, and the heat sink increases. As a result, the sealing resin does not crack or peel off while being thin and excellent in heat dissipation, and even if the lead frame and the heat dissipation plate are repeatedly subjected to temperature rise and fall, they are not peeled off and reliability is improved.

続いて、添付した図面を参照しつつ、本発明を具体化した実施の形態につき説明し、本発明の理解に供する。
ここで、図１は本発明の第１の実施の形態に係る複合リードフレームの平面図、図２は図１におけるＸ−Ｘ断面図、図３は同複合リードフレームを用いた半導体装置の断面図、図４は本発明の第２の実施の形態に係る複合リードフレームの平面図、図５は図４におけるＹ−Ｙ断面図、図６は同複合リードフレームを用いた半導体装置の断面図である。 Next, embodiments of the present invention will be described with reference to the accompanying drawings for understanding of the present invention.
1 is a plan view of the composite lead frame according to the first embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line XX in FIG. 1, and FIG. 3 is a cross section of a semiconductor device using the composite lead frame. 4 is a plan view of a composite lead frame according to a second embodiment of the present invention, FIG. 5 is a cross-sectional view along line YY in FIG. 4, and FIG. 6 is a cross-sectional view of a semiconductor device using the composite lead frame. It is.

図１、図２に示すように、本発明の第１の実施の形態に係る複合リードフレーム１０は、リードフレーム１１とその下部に連結される放熱板１２とを有している。リードフレーム１１は、銅、銅合金又は鉄合金からなる薄板材をプレス加工又はエッチング加工によって造られる周知の構造であって、四角形の角部を支持リード１３〜１６によって支持されるパッド１７とパッド１７の周囲４方に配置されている複数のリード１８とを有している。リード１８の周囲は連結バー１９で連結され、その周囲には枠体２０を備える。 As shown in FIGS. 1 and 2, the composite lead frame 10 according to the first embodiment of the present invention has a lead frame 11 and a heat radiating plate 12 connected to the lower portion thereof. The lead frame 11 has a known structure in which a thin plate material made of copper, a copper alloy, or an iron alloy is formed by pressing or etching, and a pad 17 and a pad whose square corners are supported by support leads 13 to 16. 17 and a plurality of leads 18 arranged in four directions around the periphery. The periphery of the lead 18 is connected by a connecting bar 19, and a frame body 20 is provided around the lead 18.

パッド１７の周囲には、かしめ孔（貫通孔）２１と導通孔２２が設けられている。かしめ孔２１はパッド１７の角部近傍の内側に、導通孔２２はパッド１７の外側辺２３の内側近傍にそれぞれ２つずつ隙間を有して設けられている。パッド１７には最終的には半導体チップ２４（図３参照）が搭載されるが、半導体チップ２４が搭載される領域の外側に、かしめ孔２１及び導通孔２２は設けられている。これによって、樹脂封止時に封止樹脂３１（図３参照）が導通孔２２に確実に入り込み、更には、半導体チップ２４の搭載する領域の平面性を確保している。 A caulking hole (through hole) 21 and a conduction hole 22 are provided around the pad 17. The caulking hole 21 is provided in the vicinity of the corner portion of the pad 17, and the conduction hole 22 is provided in the vicinity of the inner side of the outer side 23 of the pad 17 with two gaps. A semiconductor chip 24 (see FIG. 3) is finally mounted on the pad 17, but a caulking hole 21 and a conduction hole 22 are provided outside a region where the semiconductor chip 24 is mounted. As a result, the sealing resin 31 (see FIG. 3) surely enters the conduction hole 22 at the time of resin sealing, and further, the planarity of the region where the semiconductor chip 24 is mounted is ensured.

放熱板１２は、リードフレーム１１より厚い銅板材からなって、その寸法はパッド１７より僅少の範囲で大きくなっている。なお、パッド１７の周囲に配置される複数のリード１８の先端で形成される四角形より隙間を有して小さい。
放熱板１２の上部に、リードフレーム１１に形成されたかしめ孔２１に符合するかしめ突起２６がプレス加工によって設けられている。このかしめ突起２６の高さはリードフレーム１１の厚みの１．２〜２倍程度あって、上部をパンチで叩いて平面状に広げ、リードフレーム１１と放熱板１２を強固に連結する構造となっている。 The heat radiating plate 12 is made of a copper plate material that is thicker than the lead frame 11, and its size is slightly larger than that of the pad 17. Note that the gap is smaller than the quadrangle formed by the tips of the leads 18 disposed around the pad 17.
A caulking protrusion 26 that coincides with the caulking hole 21 formed in the lead frame 11 is provided on the heat radiating plate 12 by pressing. The height of the caulking protrusion 26 is about 1.2 to 2 times the thickness of the lead frame 11, and the upper portion is struck with a punch to spread it into a flat shape, thereby connecting the lead frame 11 and the heat sink 12 firmly. ing.

そして、この放熱板１２には、リードフレーム１１に形成されている導通孔２２に連通する導通孔２７が設けられている。導通孔２２と導通孔２７は封止樹脂３１が通して入り込むために、平面的に見てラップしていることが条件であるが、導通孔２２と導通孔２７は正確に軸心を一致していなくてもよい。 The heat radiating plate 12 is provided with a conduction hole 27 communicating with the conduction hole 22 formed in the lead frame 11. The conduction hole 22 and the conduction hole 27 are required to wrap in a plan view so that the sealing resin 31 can pass therethrough. However, the conduction hole 22 and the conduction hole 27 have the same axial center. It does not have to be.

この複合リードフレーム１０を用いた半導体装置２９を図３に示すが、パッド１７の上に半導体チップ２４が搭載され、半導体チップ２４の各電極パッドと、リード１８の先部（インナーリード）はボンディングワイヤ３０でそれぞれ連結され、半導体チップ２４とリード１８が樹脂封止されている。この状態で、放熱板１２の底部（下面）は封止樹脂３１から露出し、リード１８は外側が封止樹脂３１から突出している。これによって、冷却効果がよく、更に封止樹脂３１と複合リードフレーム１０の接合性がよい半導体装置２９を提供できる。 A semiconductor device 29 using this composite lead frame 10 is shown in FIG. 3, in which a semiconductor chip 24 is mounted on the pad 17, and each electrode pad of the semiconductor chip 24 and the tip (inner lead) of the lead 18 are bonded. The semiconductor chip 24 and the lead 18 are sealed with resin by being connected with wires 30 respectively. In this state, the bottom (lower surface) of the heat radiating plate 12 is exposed from the sealing resin 31, and the lead 18 protrudes from the sealing resin 31 on the outside. As a result, it is possible to provide the semiconductor device 29 having a good cooling effect and a good bonding property between the sealing resin 31 and the composite lead frame 10.

続いて、図４、図５に示す本発明の第２の実施の形態に係る複合リードフレーム３５について説明する。
この複合リードフレーム３５はリードフレーム３６と放熱板３７とを有している。リードフレーム３６、放熱板３７の材質は前記リードフレーム１１と放熱板１２と同じである。枠体３８内に形成されたリードフレーム３６の半導体チップ搭載領域の角部には対角線方向に支持リード３９〜４２が設けられ、その先部が四角形の放熱板３７の角部に載置されている。支持リード３９〜４２の先部にそれぞれ基側からかしめ孔（貫通孔）４３と導通孔４４が設けられている。 Next, the composite lead frame 35 according to the second embodiment of the present invention shown in FIGS. 4 and 5 will be described.
The composite lead frame 35 has a lead frame 36 and a heat radiating plate 37. The material of the lead frame 36 and the heat radiating plate 37 is the same as that of the lead frame 11 and the heat radiating plate 12. Support leads 39 to 42 are provided diagonally at the corners of the semiconductor chip mounting region of the lead frame 36 formed in the frame body 38, and the tips thereof are placed on the corners of the rectangular heat sink 37. Yes. A caulking hole (through hole) 43 and a conduction hole 44 are provided at the tip of the support leads 39 to 42 from the base side.

放熱板３７の角部にはかしめ孔４３に正確に一致するかしめ突起４５が形成され、かつその内側には、導通孔４４に連通する導通孔４６がそれぞれ形成されている。かしめ突起４５の高さは、リードフレーム３６の厚みより大きく、かしめ孔４３の上端から突出したかしめ突起４５の先端部は押し潰されて拡径し、支持リード３９〜４２が放熱板３７に強固に取付けられている。 A caulking projection 45 that exactly matches the caulking hole 43 is formed at a corner of the heat radiating plate 37, and a conduction hole 46 that communicates with the conduction hole 44 is formed inside thereof. The height of the caulking protrusion 45 is larger than the thickness of the lead frame 36, the tip end portion of the caulking protrusion 45 protruding from the upper end of the caulking hole 43 is crushed and expanded in diameter, and the support leads 39 to 42 are firmly attached to the heat radiating plate 37. Installed on.

図６はこの複合リードフレーム３５を用いた半導体装置４７を示すが、放熱板３７の内側中央に半導体チップ４８が搭載され、半導体チップ４８の各電極パッドと、リード４９の先部はボンディングワイヤ５０でそれぞれ電気的に連結されている。なお、放熱板３７の広さは、半導体チップ４８の寸法の１．５〜３倍あって、周辺部にかしめ孔４３及び導通孔４４が形成できる隙間を有している。また、５１は封止樹脂、５２は放熱板３７にかしめ突起４５を形成した場合に発生する凹部である。そして、放熱板３７の下面を露出して、半導体チップ４８とリード４９が樹脂封止され、支持リード３９〜４２と放熱板３７の導通孔４４、４６に封止樹脂５１が入りこんでいる。 FIG. 6 shows a semiconductor device 47 using this composite lead frame 35. A semiconductor chip 48 is mounted in the center of the heat sink 37, and each electrode pad of the semiconductor chip 48 and the tip of the lead 49 are bonded wires 50. Are electrically connected to each other. The size of the heat dissipation plate 37 is 1.5 to 3 times the size of the semiconductor chip 48, and has a gap in which the caulking hole 43 and the conduction hole 44 can be formed in the peripheral portion. Reference numeral 51 denotes a sealing resin, and 52 denotes a recess generated when the caulking projection 45 is formed on the heat radiating plate 37. Then, the lower surface of the heat radiating plate 37 is exposed, the semiconductor chip 48 and the lead 49 are resin-sealed, and the sealing resin 51 enters the support leads 39 to 42 and the conduction holes 44 and 46 of the heat radiating plate 37.

前記実施の形態においては、放熱板に４つのかしめ突起、８つ（又は４つ）の導通孔を設けているが、これらはそれ以下又はそれ以上の数であっても、本発明は適用される。
また、この実施の形態においては、各リードが封止樹脂の側方から突出しているが、下方に露出又は突出する場合も本発明は適用される。 In the above-described embodiment, four caulking protrusions and eight (or four) conduction holes are provided in the heat sink, but the present invention is applied even if the number is less than or more than that. The
Further, in this embodiment, each lead protrudes from the side of the sealing resin, but the present invention is also applied to the case where the lead is exposed or protrudes downward.

本発明の第１の実施の形態に係る複合リードフレームの平面図である。1 is a plan view of a composite lead frame according to a first embodiment of the present invention. 図１におけるＸ−Ｘ断面図である。It is XX sectional drawing in FIG. 同複合リードフレームを用いた半導体装置の断面図である。It is sectional drawing of the semiconductor device using the composite lead frame. 本発明の第２の実施の形態に係る複合リードフレームの平面図である。FIG. 6 is a plan view of a composite lead frame according to a second embodiment of the present invention. 図４におけるＹ−Ｙ断面図である。It is YY sectional drawing in FIG. 同複合リードフレームを用いた半導体装置の断面図である。It is sectional drawing of the semiconductor device using the composite lead frame. （Ａ）〜（Ｄ）は従来例に係る複合リードフレームの説明図である。(A)-(D) are explanatory drawings of the composite lead frame which concerns on a prior art example.

符号の説明Explanation of symbols

１０：複合リードフレーム、１１：リードフレーム、１２：放熱板、１３〜１６：支持リード、１７：パッド、１８：リード、１９：連結バー、２０：枠体、２１：かしめ孔、２２：導通孔、２３：外側辺、２４：半導体チップ、２６：かしめ突起、２７：導通孔、２９：半導体装置、３０：ボンディングワイヤ、３１：封止樹脂、３５：複合リードフレーム、３６：リードフレーム、３７：放熱板、３８：枠体、３９〜４２：支持リード、４３：かしめ孔、４４：導通孔、４５：かしめ突起、４６：導通孔、４７：半導体装置、４８：半導体チップ、４９：リード、５０：ボンディングワイヤ、５１：封止樹脂、５２：凹部
10: composite lead frame, 11: lead frame, 12: heat sink, 13-16: support lead, 17: pad, 18: lead, 19: connecting bar, 20: frame, 21: caulking hole, 22: conduction hole , 23: outer side, 24: semiconductor chip, 26: caulking protrusion, 27: conduction hole, 29: semiconductor device, 30: bonding wire, 31: sealing resin, 35: composite lead frame, 36: lead frame, 37: Radiation plate, 38: frame, 39 to 42: support lead, 43: caulking hole, 44: conduction hole, 45: caulking projection, 46: conduction hole, 47: semiconductor device, 48: semiconductor chip, 49: lead, 50 : Bonding wire, 51: sealing resin, 52: recess

Claims (5)

リードフレームに放熱板がかしめ結合された複合リードフレームにおいて、
前記リードフレームのパッドに前記放熱板がかしめ結合され、該かしめ結合したパッドと前記放熱板を通して貫通し、封止樹脂が通して入り込む導通孔が形成されていることを特徴とする複合リードフレーム。 In a composite lead frame in which a heat sink is caulked and joined to the lead frame,
A composite lead frame, wherein the heat dissipation plate is caulked and bonded to the pad of the lead frame, and a conductive hole is formed through the caulking and bonding pad and the heat dissipating plate and through which a sealing resin passes. リードフレームに放熱板がかしめ結合された複合リードフレームにおいて、
前記リードフレームの複数の支持リードに前記放熱板がかしめ結合され、該かしめ結合した複数の前記支持リードのそれぞれと前記放熱板を通して貫通し、封止樹脂が通して入り込む導通孔がそれぞれ形成されていることを特徴とする複合リードフレーム。 In a composite lead frame in which a heat sink is caulked and joined to the lead frame,
The heat radiating plate is caulked and coupled to the plurality of support leads of the lead frame, and a plurality of the caulked and coupled support leads and through holes through which the sealing resin passes are formed. A composite lead frame characterized by 請求項１及び２のいずれか１項に記載の複合リードフレームにおいて、前記リードフレームと前記放熱板とのかしめ結合は、前記リードフレームの所定位置に設けられた貫通孔に前記放熱板の上部に設けられたかしめ突起が嵌入して形成されていることを特徴とする複合リードフレーム。 3. The composite lead frame according to claim 1, wherein the lead frame and the heat radiating plate are caulked and joined to a through hole provided at a predetermined position of the lead frame at an upper portion of the heat radiating plate. A composite lead frame, wherein a caulking protrusion provided is inserted and formed. リードフレームに放熱板がかしめ結合された複合リードフレームに半導体チップを搭載し、該半導体チップの電極とリードを電気的に接続して樹脂封止した半導体装置において、
前記リードフレームのパッドに前記放熱板がかしめ結合されていると共に、該パッドと前記放熱板を通して貫通した導通孔が形成され、前記パッドに搭載された前記半導体チップの電極と前記リードが電気的に接続され、前記放熱板の下面を露出して前記半導体チップ及び前記リードが樹脂封止され、前記放熱板と前記パッドの前記導通孔に封止樹脂が通して入り込んでいることを特徴とする複合リードフレームを用いた半導体装置。 In a semiconductor device in which a semiconductor chip is mounted on a composite lead frame in which a heat sink is caulked and bonded to a lead frame, and the electrodes and leads of the semiconductor chip are electrically connected and resin-sealed,
The heat sink is caulked to the pad of the lead frame, and a conduction hole is formed through the pad and the heat sink to electrically connect the electrode of the semiconductor chip mounted on the pad and the lead. The composite is characterized in that the lower surface of the heat radiating plate is connected, the semiconductor chip and the lead are resin-sealed, and a sealing resin is inserted through the conduction hole of the heat radiating plate and the pad. A semiconductor device using a lead frame. リードフレームに放熱板がかしめ結合された複合リードフレームに半導体チップを搭載し、該半導体チップの電極とリードを電気的に接続し、樹脂封止した半導体装置において、
前記リードフレームの複数の支持リードに前記放熱板がかしめ結合されていると共に、該支持リードと前記放熱板を通して貫通した導通孔が形成され、前記放熱板に搭載された前記半導体チップの電極と前記リードが電気的に接続され、前記放熱板の下面を露出して、前記半導体チップ及び前記リードが樹脂封止され、前記放熱板と前記支持リードの前記導通孔に封止樹脂が通して入り込んでいることを特徴とする複合リードフレームを用いた半導体装置。 In a semiconductor device in which a semiconductor chip is mounted on a composite lead frame in which a heat sink is caulked and bonded to a lead frame, the electrodes of the semiconductor chip and leads are electrically connected, and resin-sealed,
The heat sink is caulked and coupled to a plurality of support leads of the lead frame, and a conduction hole penetrating through the support lead and the heat sink is formed, and the electrode of the semiconductor chip mounted on the heat sink and the A lead is electrically connected, the lower surface of the heat sink is exposed, the semiconductor chip and the lead are resin-sealed, and a sealing resin is inserted through the conduction hole of the heat sink and the support lead. A semiconductor device using a composite lead frame.
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