JP4695672B2 - Semiconductor device - Google Patents

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JP4695672B2
JP4695672B2 JP2008187140A JP2008187140A JP4695672B2 JP 4695672 B2 JP4695672 B2 JP 4695672B2 JP 2008187140 A JP2008187140 A JP 2008187140A JP 2008187140 A JP2008187140 A JP 2008187140A JP 4695672 B2 JP4695672 B2 JP 4695672B2
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semiconductor device
heat sink
semiconductor element
lead
resin
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JP2008283213A (en
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知樹 河崎
雄一郎 山田
敏行 福田
秀一 尾方
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29005—Structure
    • H01L2224/29007—Layer connector smaller than the underlying bonding area
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01006—Carbon [C]
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

本発明は、放熱板内蔵の半導体装置用のリードフレームを用いた樹脂封止型の半導体装置に関する。   The present invention relates to a resin-encapsulated semiconductor device using a lead frame for a semiconductor device with a built-in heat sink.

近年、電子機器の小型化に対応するために、半導体装置等の半導体部品の小型化、高集積化、高密度実装化が要求されている。これに伴って、半導体装置で発生される熱をいかに放熱するかが重要な課題となっている。
この半導体装置の放熱対策として、放熱板内蔵タイプやダイパッド露出タイプのものが提案されている。例えば、特許文献１には、放熱板内蔵タイプの半導体装置が開示されている。 In recent years, in order to cope with downsizing of electronic devices, downsizing, high integration, and high density mounting of semiconductor components such as semiconductor devices have been required. Accordingly, how to dissipate the heat generated in the semiconductor device has become an important issue.
As a heat dissipation measure for this semiconductor device, a heat sink built-in type or a die pad exposed type has been proposed. For example, Patent Document 1 discloses a heat sink built-in type semiconductor device.

一方、環境に配慮する機運が世界的に高まっており、半導体装置においても、鉛フリー化への要望がますます強くなっている。
特開２００１−１５６６９号公報 On the other hand, environmentally friendly momentum is increasing worldwide, and the demand for lead-free semiconductor devices is also increasing.
JP 2001-15669 A

ところが、従来の放熱板内蔵タイプ（２層フレーム）の半導体装置では、放熱板と半導体素子とを接着剤で接着する際、接着剤量を制限する必要があり、放熱板と半導体素子との間に空隙が生じる場合がある。封止樹脂で封止してもその空隙まで封止樹脂が流れ込まず、この空隙部分に吸湿した水分が溜まり易くなっている。
上述したように、鉛フリー半田を用いてこの樹脂封止の放熱板内蔵タイプの半導体装置をプリント基板へ実装すると、通常の鉛半田よりも実装温度が高いので、半導体装置内部が高温となり、吸湿した水分の蒸気圧が上昇し、放熱板と半導体素子との剥離が進行し、その結果、内部に膨れ、クラックが発生する虞がある。 However, in a conventional semiconductor device with a built-in heat sink (two-layer frame), when the heat sink and the semiconductor element are bonded with an adhesive, it is necessary to limit the amount of the adhesive between the heat sink and the semiconductor element. In some cases, voids may occur. Even if the sealing resin is used for sealing, the sealing resin does not flow into the gap, and moisture absorbed in the gap is easily collected.
As described above, when mounting this resin-encapsulated heat sink semiconductor device on a printed circuit board using lead-free solder, the mounting temperature is higher than that of normal lead solder. As a result, the vapor pressure of the moisture increases, and the heat radiating plate and the semiconductor element are separated from each other. As a result, there is a possibility that the inside expands and cracks are generated.

本発明は、鉛フリー半田を用いたプリント基板への実装によっても、内部の膨れやクラックの発生を防止することのできる樹脂封止型の半導体装置を提供することを目的とする。   An object of the present invention is to provide a resin-encapsulated semiconductor device capable of preventing the occurrence of internal swelling and cracks even by mounting on a printed circuit board using lead-free solder.

上記課題を解決するため、本発明は、半導体装置であって、複数本のインナーリードと、前記インナーリードの先端部近傍の下面に接着された放熱板と、前記放熱板に設けられた複数の開口部と、前記放熱板上に載置される半導体素子と、前記半導体素子の複数の電極パッドと前記インナーリードとを電気的に接続する金属細線と、前記インナーリードと前記半導体素子と前記金属細線とを封止する封止樹脂とを備え、前記放熱板と前記半導体素子とは、複数のダイボンド滴下領域において接着され、前記放熱板の複数の開口部は、前記複数のダイボンド滴下領域各々を挟むように配列されている。   In order to solve the above-described problem, the present invention provides a semiconductor device, which includes a plurality of inner leads, a heat sink bonded to a lower surface in the vicinity of a tip portion of the inner lead, and a plurality of heat sinks provided on the heat sink. An opening, a semiconductor element mounted on the heat sink, a plurality of electrode pads of the semiconductor element, and a thin metal wire that electrically connects the inner lead, the inner lead, the semiconductor element, and the metal And a heat sink and the semiconductor element are bonded to each other in a plurality of die bond dropping regions, and a plurality of openings of the heat sink are provided for each of the plurality of die bond dropping regions. They are arranged so as to sandwich them.

上述のような構成によれば、放熱板と半導体素子との間に空隙が生じていても、開口部の一部から封止樹脂が流れ込み、半導体装置の実装時に鉛フリー半田を用いたとしても、半導体素子の剥離が発生することが防止され、封止樹脂に膨れやクラックが発生することもない。
また、従来の鉛半田を用いた半導体製造工程をそのまま用いて、鉛フリー半田を用いる製造工程に転換することが可能となる。 According to the above-described configuration, even if a gap is generated between the heat sink and the semiconductor element, even if the sealing resin flows from a part of the opening and lead-free solder is used when mounting the semiconductor device. Further, peeling of the semiconductor element is prevented, and no swelling or cracking occurs in the sealing resin.
In addition, the semiconductor manufacturing process using the conventional lead solder can be used as it is, and the manufacturing process using the lead-free solder can be changed.

また、前記放熱板の複数の開口部と、前記複数のダイボンド滴下領域は千鳥状に配置されることとしてもよい。
このような構成によって、ダイボンド滴下領域上に半導体素子を少量の接着剤で確実に接着することができ、また、半導体装置の製造時に封止樹脂が放熱板と半導体素子との間に開口部を通じ十分に流れ込むので、半導体素子との間に空隙の生じることが防止される。この結果、このリードフレームを用いた半導体装置の実装時に、通常の鉛半田よりも高温となる鉛フリー半田を用いても、半導体素子の剥離や剥離進行による封止樹脂の膨れやクラックを防止することができる。 The plurality of openings of the heat sink and the plurality of die bond dripping regions may be arranged in a staggered manner.
With such a configuration, the semiconductor element can be securely bonded to the die bond dripping region with a small amount of adhesive, and the sealing resin passes through the opening between the heat sink and the semiconductor element during the manufacture of the semiconductor device. Since it flows sufficiently, it is possible to prevent a gap from being formed between the semiconductor element. As a result, when mounting a semiconductor device using this lead frame, even if lead-free solder having a temperature higher than that of normal lead solder is used, the swelling and cracking of the sealing resin due to the peeling of the semiconductor element and the progress of the peeling are prevented. be able to.

また、前記放熱板の複数の開口部のうち少なくとも一つの開口部は、前記半導体素子の搭載領域からその一部がはみだしていることを特徴とすることとしてもよい。
また、前記開口部は略矩形であることとしてもよい。
このような構成によって、放熱板と半導体素子との間に空隙が生じていても、開口部の一部から封止樹脂が流れ込み、樹脂封止型の半導体装置の実装時に鉛フリー半田を用いたとしても、半導体素子の剥離が発生することが防止され、封止樹脂に膨れやクラックが発生することもない。 Further, at least one of the plurality of openings of the heat radiating plate may be partially protruded from the mounting region of the semiconductor element.
The opening may be substantially rectangular.
With such a configuration, even if a gap is generated between the heat sink and the semiconductor element, the sealing resin flows from a part of the opening, and lead-free solder is used when mounting the resin-encapsulated semiconductor device. However, it is possible to prevent the peeling of the semiconductor element and to prevent the sealing resin from being swollen or cracked.

また、前記開口部の各辺は前記半導体素子の搭載領域の各辺と略４５度傾いて配列されていることとしてもよい。
このような構成によって、半導体素子は、ダイパッドと確実に接着されるので、空隙が生じることが防止される。
また、前記開口部の各頂点は丸みを帯びていることとしてもよい。 Further, each side of the opening may be arranged with an inclination of about 45 degrees with each side of the mounting region of the semiconductor element.
With such a configuration, since the semiconductor element is securely bonded to the die pad, it is possible to prevent a gap from being generated.
Further, each vertex of the opening may be rounded.

このような構成によって、封止樹脂は、半導体素子の搭載領域の外側に位置する開口部の一部から半導体素子と放熱板との間に流れ込み、確実に空隙の生じることを防止することができる。また、開口部が丸味を帯びていることにより、局所的な応力の集中を緩和できる。

また、前記インナーリードの先端に囲まれ、前記半導体素子の搭載領域を囲繞する環状体をさらに備え、前記環状体の各辺の中央は内側に凸部を有し、前記放熱板の上面と環状体の下面とが接着されていることとしてもよい。 With such a configuration, the sealing resin can be prevented from flowing between the semiconductor element and the heat sink from a part of the opening located outside the mounting area of the semiconductor element, and reliably generating a gap. . Moreover, since the opening is rounded, local stress concentration can be reduced.

In addition, an annular body surrounded by the tip of the inner lead and surrounding the mounting region of the semiconductor element is further provided, the center of each side of the annular body has a convex portion on the inside, and the upper surface of the heat radiating plate is annular The lower surface of the body may be bonded.

このような構成によって、リードフレームの製造時において、放熱板をインナーリードの先端部近傍の下面に接着する際、放熱板に歪みが発生することなく、リードフレーム製造時の形態の安定性を図ることができる。
また、前記複数本のインナーリードは各々、複数本のアウターリードに連続することとしてもよい。 With such a configuration, when the heat sink is bonded to the lower surface near the tip of the inner lead when the lead frame is manufactured, the heat sink is not distorted and the form is stable when the lead frame is manufactured. be able to.
Further, each of the plurality of inner leads may be continued to the plurality of outer leads.

このような構成によって、ダイボンド滴下領域上に半導体素子を少量の接着剤で確実に接着することができ、また、半導体装置の製造時に封止樹脂が放熱板と半導体素子との間に開口部を通じ十分に流れ込むので、半導体素子との間に空隙の生じることが防止される。
この結果、このリードフレームを用いた樹脂封止型半導体装置の実装時に、通常の鉛半田よりも高温となる鉛フリー半田を用いても、半導体素子の剥離や剥離進行による封止樹脂の膨れやクラックを防止することができる。 With such a configuration, the semiconductor element can be securely bonded to the die bond dripping region with a small amount of adhesive, and the sealing resin passes through the opening between the heat sink and the semiconductor element during the manufacture of the semiconductor device. Since it flows sufficiently, it is possible to prevent a gap from being formed between the semiconductor element.
As a result, when mounting a resin-encapsulated semiconductor device using this lead frame, even if lead-free solder that is hotter than normal lead solder is used, the swelling of the encapsulating resin due to the delamination or delamination progress of the semiconductor element Cracks can be prevented.

また、本発明は、放熱板上に半導体素子が搭載される半導体装置の製造方法であって、複数本のアウターリードと、アウターリードに連続し、半導体素子の電極パッドと電気的に接続されるインナーリードとを備えたリードフレームを用意する工程と、前記インナーリード先端部近傍の下面に前記放熱板の上面を貼り合わせる工程と、前記放熱板に複数の開口部を穿設する工程と、前記複数の開口部各々に挟まれるように、前記放熱板の複数のポイントに接着剤を滴下する工程と、前記複数の接着剤を滴下したポイントを覆うように前記半導体素子を載置し、前記放熱板と前記半導体素子とを固着する工程とを含む。   The present invention also relates to a method for manufacturing a semiconductor device in which a semiconductor element is mounted on a heat sink, and a plurality of outer leads, continuous to the outer leads, and electrically connected to an electrode pad of the semiconductor element. A step of preparing a lead frame including an inner lead; a step of bonding an upper surface of the heat sink to a lower surface near the tip of the inner lead; a step of drilling a plurality of openings in the heat sink; A step of dropping an adhesive on a plurality of points of the heat dissipation plate so as to be sandwiched between each of the plurality of openings, and placing the semiconductor element so as to cover the points where the plurality of adhesives have been dropped. Fixing the plate and the semiconductor element.

また、前記放熱板と半導体素子とを固着する工程において、前記複数の開口部のうち少なくとも一つの開口部の一部を露出するように前記半導体素子を載置することとしてもよい。
このような方法によって、開口穿設工程において、ダイパッドを複数に分断するのと同時に、開口部を形成することができるので、工程の煩雑化を防止して、改良されたリードフレームを得ることができる。 Further, in the step of fixing the heat radiating plate and the semiconductor element, the semiconductor element may be placed so that a part of at least one of the plurality of openings is exposed.
By such a method, the opening can be formed at the same time as the die pad is divided into a plurality of parts in the opening drilling process, so that the process can be prevented from becoming complicated and an improved lead frame can be obtained. it can.

以下、本発明に係るリードフレームとそれを用いた樹脂封止型半導体装置の実施形態について、図面を用いて説明する。
（実施の形態１）
図1は、本発明に係るリードフレームの実施の形態１の平面図であり、図2は、その底面図である。 Embodiments of a lead frame and a resin-encapsulated semiconductor device using the same according to the present invention will be described below with reference to the drawings.
(Embodiment 1)
FIG. 1 is a plan view of a first embodiment of a lead frame according to the present invention, and FIG. 2 is a bottom view thereof.

リードフレーム１０１は、矩形の枠部１０２と、枠部１０２の四辺に直角方向に延在する複数のアウターリード１０３と、アウターリードに連続して枠部１０２の内方に延びるインナーリード１０４と、インナーリード１０４の先端部近傍の下面に接着された放熱板１０５とを備え、放熱板１０５には、略正方形で、各頂点部分が丸味を帯びて、アウターリードの延在方向に略４５度傾いた複数の開口部１０６が穿設されている。この開口部１０６の一部は、鎖線で示す半導体素子の搭載領域１０７の外側に形成されている。アウターリード１０３とインナーリード１０４との境界部分は、ダムバー１０８で枠部１０２の四辺方向に連結されている。ダムバー１０８の内側で鎖線で示す領域１０９内は、このリードフレーム１０１を用いた樹脂封止型半導体装置で封止樹脂に覆われる領域を示している。   The lead frame 101 includes a rectangular frame portion 102, a plurality of outer leads 103 extending in a direction perpendicular to the four sides of the frame portion 102, an inner lead 104 extending inward of the frame portion 102 continuously to the outer leads, A heat radiating plate 105 bonded to the lower surface near the tip of the inner lead 104. The heat radiating plate 105 has a substantially square shape, and each apex portion is rounded and is inclined by approximately 45 degrees in the extending direction of the outer lead. A plurality of openings 106 are formed. A part of the opening 106 is formed outside the semiconductor element mounting region 107 indicated by a chain line. A boundary portion between the outer lead 103 and the inner lead 104 is connected to the four sides of the frame portion 102 by a dam bar 108. A region 109 indicated by a chain line inside the dam bar 108 indicates a region covered with the sealing resin by the resin-encapsulated semiconductor device using the lead frame 101.

リードフレーム１０１の放熱板１０５以外は、銅合金からなる、例えば厚さ０．１５ｍｍ、硬度Ｈｖ＝１５０〜１８５の金属板をエッチング法またはプレス法で加工して得られる。放熱板１０５は、銅合金からなる金属板であり、例えば厚みを０．１３ｍｍとされる。放熱板１０５は、接着剤でインナーリード１０４の先端部の底面に加熱接着されている。   Except for the heat dissipation plate 105 of the lead frame 101, it is obtained by processing a metal plate made of a copper alloy, for example, having a thickness of 0.15 mm and a hardness Hv = 150 to 185 by an etching method or a pressing method. The heat sink 105 is a metal plate made of a copper alloy, and has a thickness of 0.13 mm, for example. The heat sink 105 is heat bonded to the bottom surface of the tip of the inner lead 104 with an adhesive.

図３は、このリードフレーム１０１を用いた樹脂封止型半導体装置の図１のＳ−Ｓ´切断線で切断した断面図である。
リードフレーム１０１の放熱板１０５の半導体素子搭載領域１０７には、半導体素子３０１が例えば銀ペースト等のダイボンド３０２で放熱板１０５に接着されている。半導体素子３０１の電極パッドと対応するインナーリード１０４との間は、金属細線等のワイヤで接続されている。アウターリード１０３を露出させて、例えばエポキシ系樹脂からなる封止樹脂３０４で樹脂封止型半導体装置は樹脂封止されている。 FIG. 3 is a cross-sectional view of the resin-encapsulated semiconductor device using the lead frame 101 taken along the line S-S 'in FIG.
In the semiconductor element mounting area 107 of the heat sink 105 of the lead frame 101, the semiconductor element 301 is bonded to the heat sink 105 with a die bond 302 such as silver paste. The electrode pads of the semiconductor element 301 and the corresponding inner leads 104 are connected by a wire such as a fine metal wire. The outer lead 103 is exposed, and the resin-sealed semiconductor device is sealed with a sealing resin 304 made of, for example, an epoxy resin.

次に、本実施の形態の樹脂封止型半導体装置の製造工程を図４を参照して説明する。図４は、図１に示した切断線Ｓ−S´で切断した断面図である。
図４（ａ）、（ｂ）は、リードフレーム１０１の製造工程を示している。
図４（ａ）は、銅合金の金属板を加工してアウターリード１０３、インナーリード１０４等を枠部１０２で連結した金属部材と、インナーリード１０４の先端部の下面と放熱板１０５の上面とを接着剤で貼り合わせる貼り合せ工程を示している。なお、断面図は、煩雑さを防止するため背景部分を省略している。以下も同様である。 Next, the manufacturing process of the resin-encapsulated semiconductor device of this embodiment will be described with reference to FIG. 4 is a cross-sectional view taken along the cutting line SS ′ shown in FIG.
4A and 4B show the manufacturing process of the lead frame 101. FIG.
4A shows a metal member obtained by processing a copper alloy metal plate and connecting the outer lead 103, the inner lead 104, and the like with the frame portion 102, the lower surface of the tip portion of the inner lead 104, and the upper surface of the heat radiating plate 105. Shows a bonding step of bonding together with an adhesive. In the cross-sectional view, the background portion is omitted to prevent complication. The same applies to the following.

図４（ｂ）は、金属部材と貼り合わされた放熱板１０５とにパンチ加工等によって、開口部１０６を形成する開口穿設工程を示している。これによって、リードフレーム１０１が製造される。
図４（ｃ）は、リードフレーム１０１に半導体素子３０１を固着する半導体素子固着工程を示す。 FIG. 4B shows an opening drilling process in which the opening 106 is formed in the heat radiating plate 105 bonded to the metal member by punching or the like. As a result, the lead frame 101 is manufactured.
FIG. 4C shows a semiconductor element fixing step for fixing the semiconductor element 301 to the lead frame 101.

リードフレーム１０１の放熱板１０５の図１に点線で示すポイント１１０にダイボンド３０２を滴下し、半導体素子３０１を載置し固着する。
図４（ｄ）は、ワイヤボンディング工程を示す。半導体素子３０１の電極パッドと対応するインナーリード１０４の先端部とをワイヤ３０３で接続する。
図４（ｅ）は、樹脂封止工程を示す。アウターリード１０３を露出させ、金型をリードフレーム１０１とワイヤ３０３とを覆うように配置し、エポキシ樹脂からなる封止樹脂を金型温度１８０℃で注入する。注入時間は例えば、８秒間とする。冷却後、金型を外す。 A die bond 302 is dropped at a point 110 indicated by a dotted line in FIG. 1 of the heat dissipating plate 105 of the lead frame 101, and the semiconductor element 301 is placed and fixed.
FIG. 4D shows a wire bonding process. The electrode pad of the semiconductor element 301 and the corresponding tip of the inner lead 104 are connected by a wire 303.
FIG. 4E shows a resin sealing process. The outer lead 103 is exposed, the mold is disposed so as to cover the lead frame 101 and the wire 303, and a sealing resin made of epoxy resin is injected at a mold temperature of 180 ° C. The injection time is, for example, 8 seconds. After cooling, remove the mold.

図４（ｆ）は、アウターリード１０３のベンディング工程を示す。リードフレーム１０１の枠部１０２をタイバーカットにより切り離し、アウターリード１０３をベンディング加工して樹脂封止型半導体装置が得られる。
本実施の形態では、図４（ｅ）に示す樹脂封止工程において、半導体素子搭載領域１０７からはみ出した開口部１０６から注入された封止樹脂が半導体素子３０１と放熱板１０５との隙間に入り込み、半導体素子３０１と放熱板１０５との密着性を高める。これによって、半導体素子３０１と放熱板１０５との間に空隙が生ずることを防止できる。
（実施の形態２）
次に、本発明に係るダイパッド付きリードフレーム及びそれを用いた樹脂封止型半導体装置の実施の形態２について説明する。上記実施の形態１の構成と同様の部分についてはその説明を省略し、本実施の形態固有の部分についてのみ説明する。 FIG. 4F shows a bending process of the outer lead 103. The frame portion 102 of the lead frame 101 is cut by tie bar cutting, and the outer lead 103 is bent to obtain a resin-encapsulated semiconductor device.
In the present embodiment, in the resin sealing step shown in FIG. 4E, the sealing resin injected from the opening 106 protruding from the semiconductor element mounting region 107 enters the gap between the semiconductor element 301 and the heat sink 105. The adhesion between the semiconductor element 301 and the heat sink 105 is increased. Thereby, it is possible to prevent a gap from being generated between the semiconductor element 301 and the heat sink 105.
(Embodiment 2)
Next, a second embodiment of a lead frame with a die pad and a resin-encapsulated semiconductor device using the same according to the present invention will be described. The description of the same parts as those of the first embodiment will be omitted, and only the parts unique to the present embodiment will be described.

図５は、ダイパッド付きリードフレームの平面図であり、図６は、その底面図である。ダイパッド付きリードフレーム５０１の半導体素子搭載領域１０７に開口部１０６と傾いた市松模様を形成するように複数のダイパッド５０２が設けられている。ダイパッド５０２は、略正方形であり、開口部１０６と同様に各辺がアウターリード１０３の延在方向と略４５度の傾きをもっている。   FIG. 5 is a plan view of a lead frame with a die pad, and FIG. 6 is a bottom view thereof. A plurality of die pads 502 are provided in the semiconductor element mounting region 107 of the lead frame with die pads 501 so as to form an opening 106 and an inclined checkered pattern. The die pad 502 has a substantially square shape, and each side has an inclination of approximately 45 degrees with respect to the extending direction of the outer lead 103, similar to the opening 106.

開口部１０６のうち、外周に穿設された各開口部１０６の一部は、半導体素子搭載領域１０７の外側に位置している。
ここで、開口部１０６と開口部１０６に取り囲まれたダイパッド５０２とが市松模様を形成し、アウターリード１０３の延在方向に各辺が略４５°に傾いているので、半導体素子搭載領域１０７に占めるダイパッド５０２の面積がちょうど半導体素子３０１の接着剤の滴下領域に最適となる。 A part of each opening 106 formed on the outer periphery of the opening 106 is located outside the semiconductor element mounting region 107.
Here, the opening 106 and the die pad 502 surrounded by the opening 106 form a checkered pattern, and each side is inclined at approximately 45 ° in the extending direction of the outer lead 103, so that the semiconductor element mounting region 107 The occupied area of the die pad 502 is optimal for the adhesive dripping region of the semiconductor element 301.

ダイパッド付きリードフレーム５０１のダムバー１０８の矩形の各頂点から中心に向けて吊りリード５０３が突出している。
ダイパッド５０２の底面とインナーリード１０４の先端部近傍の底面とは、接着剤で放熱板１０５と接着されている。
図７は、図５、図６に示したダイパッド付きリードフレーム５０１の開口部１０６の形成前のリードフレームの平面図であり、図８はその底面図である。 Suspended leads 503 protrude from the vertices of the rectangle of the dam bar 108 of the lead frame 501 with die pad toward the center.
The bottom surface of the die pad 502 and the bottom surface near the tip of the inner lead 104 are bonded to the heat sink 105 with an adhesive.
7 is a plan view of the lead frame before forming the opening 106 of the lead frame with die pad 501 shown in FIGS. 5 and 6, and FIG. 8 is a bottom view thereof.

各ダイパッド５０２は、連結リング７０１で連結されており、連結リング７０１は、吊りリード５０３でダムバー１０８に連なっている。これらの各ダイパッド５０２、連結リング７０１、吊りリード５０３の下面は、接着剤で放熱板１０５の上面に貼付されている。
なお、放熱板１０５を除くリードフレーム５０１は、上記実施の形態１と同様に、銅合金からなる金属板を例えばプレス法で一体成型されて製造される。 Each die pad 502 is connected by a connection ring 701, and the connection ring 701 is connected to the dam bar 108 by a suspension lead 503. The lower surfaces of each die pad 502, connecting ring 701, and suspension lead 503 are attached to the upper surface of the heat sink 105 with an adhesive.
Note that the lead frame 501 excluding the heat radiating plate 105 is manufactured by integrally molding a metal plate made of a copper alloy, for example, by a press method, as in the first embodiment.

図９は、このリードフレーム５０１を用いた樹脂封止型半導体装置の図５のＳ−Ｓ´切断線で切断した断面図である。
この樹脂封止型半導体装置では、放熱板１０５の上面と半導体素子３０１との間にそれぞれ接着剤で貼り合わされたダイパッド５０２を介在させている。これによって、放熱板５０２と半導体素子３０１との間の空間が拡がり、封止樹脂３０４が複数の開口部１０６を通じて流入し易くなっているので、半導体素子３０１と放熱板５０２との間に空隙が発生することを低減することができる。 FIG. 9 is a cross-sectional view of the resin-encapsulated semiconductor device using the lead frame 501 taken along the line SS ′ in FIG.
In this resin-encapsulated semiconductor device, a die pad 502 bonded with an adhesive is interposed between the upper surface of the heat sink 105 and the semiconductor element 301. As a result, the space between the heat sink 502 and the semiconductor element 301 is expanded, and the sealing resin 304 easily flows through the plurality of openings 106, so that a gap is formed between the semiconductor element 301 and the heat sink 502. Occurrence can be reduced.

次に、本実施の形態のダイパッド付きリードフレーム及び樹脂封止型半導体装置の製造工程を図１０の断面図を用いて説明する。
なお、この断面図は、図５に示したＳ−Ｓ´断面であり、煩雑さを避けるため、背景部分を省略して示している。また、上記実施の形態１の図４に示した工程と略同様の工程である図１０（ｄ）−図１０（ｆ）については説明を省略する。 Next, the manufacturing process of the lead frame with a die pad and the resin-encapsulated semiconductor device of this embodiment will be described with reference to the cross-sectional view of FIG.
Note that this cross-sectional view is the SS ′ cross section shown in FIG. 5, and the background portion is omitted to avoid complication. Also, description of FIG. 10D to FIG. 10F which is substantially the same as the process shown in FIG. 4 of the first embodiment will be omitted.

図１０（ａ）は、銅合金の金属板を加工したアウターリード１０３、インナーリード１０４、ダイパッド５０２等を枠部１０２で連結した金属部材のインナーリード１０４の先端部、ダイパッド５０２の下面と放熱板１０５の上面とを接着剤で貼り合せる貼り合せ工程を示している。
図１０（ｂ）は、金属部材と貼り合わされた放熱板１０６とにパンチ加工等によって、複数の開口部１０６を形成するとともに、連結リング７０１、吊りリード５０３の一部を同時に取り除き、ダイパッド５０２を分離する開口穿設工程を示している。この開口部１０６は、ダイパッド付きリードフレーム５０１の矩形の各辺と略４５度傾いた略正方形であり、ダイパッド５０２と市松模様を形成するように配設され、外周に位置する各開口部１０６の一部は、半導体素子搭載領域の外側に位置している。 FIG. 10 (a) shows the outer lead 103, inner lead 104, die pad 502, etc., which are made by processing a copper alloy metal plate, the tip portion of the inner lead 104 of the metal member connected by the frame portion 102, the lower surface of the die pad 502 and the heat sink. A bonding step of bonding the upper surface of 105 with an adhesive is shown.
In FIG. 10B, a plurality of openings 106 are formed in the heat sink 106 bonded to the metal member by punching or the like, and part of the connection ring 701 and the suspension leads 503 are removed at the same time, and the die pad 502 is removed. The opening drilling process to isolate | separate is shown. The opening 106 is a substantially square inclined approximately 45 degrees with each rectangular side of the lead frame 501 with the die pad, and is disposed so as to form a checkered pattern with the die pad 502, and each opening 106 positioned on the outer periphery. A part is located outside the semiconductor element mounting region.

図１０（ｃ）は、ダイパッド付きリードフレーム５０１に半導体素子３０１を固着する半導体素子固着工程を示す。各ダイパッド５０２の上面にダイボンド３０２を滴下し、半導体素子３０１を載置し固着する。
図１０（ｄ）−図１０（ｆ）の各工程は、上記実施の形態１と同様である。
なお、図１０（ｅ）の樹脂封止工程では、封止樹脂は、上記実施の形態１よりも放熱板１０５と半導体素子１０３との間の空間により注入され易くなっている。
（実施の形態３）
次に、本発明に係る環状体付きリードフレーム及びそれを用いた樹脂封止型半導体装置の実施の形態３について説明する。上記実施の形態１の構成と同様の部分についてはその説明を省略し、本実施の形態固有の部分についてのみ説明する。 FIG. 10C shows a semiconductor element fixing step for fixing the semiconductor element 301 to the lead frame 501 with a die pad. A die bond 302 is dropped on the upper surface of each die pad 502, and the semiconductor element 301 is placed and fixed.
Each step in FIG. 10D to FIG. 10F is the same as that in the first embodiment.
10E, the sealing resin is more easily injected into the space between the heat sink 105 and the semiconductor element 103 than in the first embodiment.
(Embodiment 3)
Next, Embodiment 3 of the lead frame with an annular body and the resin-encapsulated semiconductor device using the same according to the present invention will be described. The description of the same parts as those of the first embodiment will be omitted, and only the parts unique to the present embodiment will be described.

図１１は、環状体付きリードフレームの平面図であり、図１２はその底面図である。
この環状体付きリードフレーム１１００には、上記実施の形態１のリードフレーム１０１に半導体素子３０１の搭載領域１０７を囲繞する環状体１１０１が形成されている。この環状体１１０１には、各辺の中央部に半導体素子３０１側に突出したキャップ状の凸部１１０３が形成されている。この環状体１１０１の各コーナーでは、ダムバー１０８にこの環状体１１０１を連接する吊りリード１１０２が形成されている。なお、このリードフレーム１１００は、放熱板１０５を除き、金属板から一体的に形成されている。 FIG. 11 is a plan view of a lead frame with an annular body, and FIG. 12 is a bottom view thereof.
In this lead frame 1100 with an annular body, an annular body 1101 surrounding the mounting region 107 of the semiconductor element 301 is formed on the lead frame 101 of the first embodiment. The annular body 1101 is formed with a cap-shaped convex portion 1103 that protrudes toward the semiconductor element 301 at the center of each side. At each corner of the annular body 1101, suspension leads 1102 that connect the annular body 1101 to the dam bar 108 are formed. The lead frame 1100 is integrally formed from a metal plate except for the heat radiating plate 105.

図１３は、この環状体付きリードフレーム１１００を用いた樹脂封止型半導体装置の断面図である。この断面図は、図１１のＳ−Ｓ´切断線での断面を示している。
インナーリード１０４の内方には、半導体素子３０１を囲繞する環状体１１０１が配設されており、環状体１１０１の凸部１１０３の断面が示されている。
図１４は、この環状体付きリードフレーム１１００及びこれを用いた樹脂封止型半導体装置の製造工程を説明する断面図である。なお、この断面図は図１１に示されＳ−Ｓ´断面であり、背景部分を省略している。 FIG. 13 is a cross-sectional view of a resin-encapsulated semiconductor device using the annular lead frame 1100. This sectional view shows a section taken along the line S-S 'of FIG.
An annular body 1101 surrounding the semiconductor element 301 is disposed inside the inner lead 104, and a cross section of the convex portion 1103 of the annular body 1101 is shown.
FIG. 14 is a cross-sectional view for explaining a manufacturing process of the annular lead frame 1100 and a resin-encapsulated semiconductor device using the same. In addition, this sectional view is shown in FIG. 11 and is the SS ′ section, and the background portion is omitted.

図１４（ａ）は、金属部材と放熱板１０５との貼り合せ工程を示している。
インナーリード１０４の先端部の下面と、環状体１１０１の下面とに接着剤を塗布し、放熱板１０５の上面と、熱接着により貼り合わせる。
この工程において、吊りリード１１０２に連接された環状体１１０１がインナーリード１０４の内方にあるので、放熱板１０５の接着時に放熱板１０５が波状に変形して接着されることを防止でき、また、熱による変形を環状体１１０１の各辺の中央に設けられた凸部１１０３で吸収することができる。 FIG. 14A shows a bonding process between the metal member and the heat radiating plate 105.
An adhesive is applied to the lower surface of the front end portion of the inner lead 104 and the lower surface of the annular body 1101, and is bonded to the upper surface of the heat sink 105 by thermal bonding.
In this process, since the annular body 1101 connected to the suspension lead 1102 is inside the inner lead 104, it is possible to prevent the heat radiating plate 105 from being deformed in a wave shape when the heat radiating plate 105 is bonded, The deformation due to heat can be absorbed by the convex portion 1103 provided at the center of each side of the annular body 1101.

図１４（ｂ）−図１４（ｄ）の各工程は、上記実施の形態１の各工程と略同様であるので説明を省略する。
図１４（ｅ）の樹脂封止工程において、環状体１１０１が形成されていることによって、封止樹脂３０４の注入時に、封止樹脂が半導体素子３０１に衝撃的に注入されることが防止される。 Each process of FIG. 14B to FIG. 14D is substantially the same as each process of the first embodiment, and thus the description thereof is omitted.
In the resin sealing step of FIG. 14E, the annular body 1101 is formed, so that the sealing resin is prevented from being shockedly injected into the semiconductor element 301 when the sealing resin 304 is injected. .

図１４（ｆ）のベンディング工程は、上記実施の形態１と略同様である。
以上、各実施の形態のリードフレームとそれを用いた樹脂封止型半導体装置について、説明したけれども、各実施の形態のリードフレームの構成を組み合わせて実施することができるのは勿論である。
例えば、実施の形態２で説明したダイパッドと実施の形態３で説明した環状体とを有するリードフレームである。 The bending process in FIG. 14F is substantially the same as that in the first embodiment.
As mentioned above, although the lead frame of each embodiment and the resin-encapsulated semiconductor device using the same have been described, it is needless to say that the configuration of the lead frame of each embodiment can be combined.
For example, the lead frame includes the die pad described in the second embodiment and the annular body described in the third embodiment.

次に、上記実施の形態２と実施の形態１とにおける樹脂封止工程における封止樹脂の流れを図１５、図１６を用いて説明する。
図１５は、ダイパッド５０２を介して半導体素子３０１が放熱板１０５に固着された状態を示しており、図１６は、半導体素子３０１が直接放熱板１０５に固着された状態を示している。半導体素子３０１は、ダイボンド３０２によって固着されているが、実施の形態２のように、ダイパッド５０２を介して放熱板１０５に固着されているとき、ダイパッド５０２の厚みだけ、半導体素子３０１と放熱板１０５との間の空間が拡がっている。このため、封止樹脂は矢符１５０１で示すように、放熱板１０５と半導体素子３０１との間の空間内にも開口部１０６から十分に流れ込むことができる。図１６に示す実施の形態１の場合においても、開口部１０６を介して放熱板１０５と半導体素子３０１との間に、矢符１６０１に示すように封止樹脂が流入し、空隙の発生を防止している。
（比較例）
次に、上記実施の形態２で製造された樹脂封止型半導体装置（本装置）と従来例の樹脂封止型半導体装置（従来装置）との鉛フリー半田を用いた実装を想定した比較実験の結果を示す。 Next, the flow of the sealing resin in the resin sealing step in the second embodiment and the first embodiment will be described with reference to FIGS. 15 and 16.
FIG. 15 shows a state where the semiconductor element 301 is fixed to the heat radiating plate 105 via the die pad 502, and FIG. 16 shows a state where the semiconductor element 301 is directly fixed to the heat radiating plate 105. The semiconductor element 301 is fixed by the die bond 302. However, when the semiconductor element 301 is fixed to the heat sink 105 via the die pad 502 as in the second embodiment, the semiconductor element 301 and the heat sink 105 are only as thick as the die pad 502. The space between is expanded. For this reason, the sealing resin can sufficiently flow into the space between the heat sink 105 and the semiconductor element 301 from the opening 106 as indicated by an arrow 1501. Also in the case of the first embodiment shown in FIG. 16, the sealing resin flows between the heat radiating plate 105 and the semiconductor element 301 through the opening 106 as shown by an arrow 1601 to prevent the generation of voids. is doing.
(Comparative example)
Next, a comparative experiment assuming mounting using lead-free solder between the resin-encapsulated semiconductor device manufactured in the second embodiment (this device) and the conventional resin-encapsulated semiconductor device (conventional device) The results are shown.

従来例のリードフレームの平面図を図１７に、その底面図を図１８に示している。このリードフレームでは、半導体素子３０１の搭載領域１０７の下方の放熱板１０５に一つの開口１７０１が穿設されている。図１９は、このリードフレームを用いた従来例の樹脂封止型半導体装置の図１７のＳ−Ｓ´断面を示す断面図である。
先ず、本装置と従来装置とを温度１２５℃で１２時間ベーキングし、乾燥する。その後、温度３０℃で相対湿度７０％の雰囲気で７２時間、吸湿させる。その後２６５℃の高温下で５分間放置した後、再度、温度３０℃で相対湿度７０％の雰囲気に９６時間放置する。再度、２６５℃の高温下で５分間放置した後、室温まで冷却後、本装置と従来装置との剥離とクラックとを超音波で検査した。 A plan view of a conventional lead frame is shown in FIG. 17, and a bottom view thereof is shown in FIG. In this lead frame, one opening 1701 is formed in the heat radiating plate 105 below the mounting region 107 of the semiconductor element 301. FIG. 19 is a cross-sectional view showing the S-S ′ cross section of FIG. 17 of a conventional resin-encapsulated semiconductor device using this lead frame.
First, this apparatus and the conventional apparatus are baked at a temperature of 125 ° C. for 12 hours and dried. Thereafter, moisture is absorbed for 72 hours in an atmosphere at a temperature of 30 ° C. and a relative humidity of 70%. Thereafter, it is allowed to stand at a high temperature of 265 ° C. for 5 minutes, and then left again in an atmosphere of 30 ° C. and 70% relative humidity for 96 hours. Again, after being left at a high temperature of 265 ° C. for 5 minutes, after cooling to room temperature, peeling and cracks between this apparatus and the conventional apparatus were inspected with ultrasonic waves.

両装置のサンプル数は１５とした。
剥離とクラックとが生じたサンプル数を次表に示す。 The number of samples for both devices was 15.
The number of samples in which peeling and cracks occurred is shown in the following table.

Figure 0004695672
Figure 0004695672

上表の結果より、上記実施の形態２で説明した樹脂封止型半導体装置では、鉛フリーの半田を用いて基板等への実装を行っても、半導体素子の剥離や封止樹脂のクラック発生を完全に防止することが確認された。
なお、上記各実施の形態では、リードフレームを１個だけ示したけれども、上下左右方向に連続した複数のリードフレームを形成しておき、半導体素子の接着、ワイヤボンディングの後、金型で覆い封止樹脂を注入した後、各樹脂封止型半導体装置を切り離すようにしてよいのは勿論である。 From the results shown in the above table, in the resin-encapsulated semiconductor device described in the second embodiment, even if the lead-free solder is used for mounting on a substrate or the like, peeling of the semiconductor element or generation of cracks in the encapsulating resin occurs. It has been confirmed that this can be completely prevented.
In each of the above embodiments, only one lead frame is shown. However, a plurality of lead frames continuous in the vertical and horizontal directions are formed and covered with a die after bonding of semiconductor elements and wire bonding. Of course, each resin-encapsulated semiconductor device may be separated after injecting the stop resin.

本発明に係るリードフレーム及び樹脂封止型半導体装置は、環境に配慮した半導体装置として、半導体の製造分野で利用される。   The lead frame and the resin-encapsulated semiconductor device according to the present invention are used in the field of semiconductor manufacturing as an environmentally friendly semiconductor device.

本発明に係るリードフレームの実施の形態１の平面図である。1 is a plan view of a lead frame according to a first embodiment of the present invention. 図１の底面図である。It is a bottom view of FIG. 上記実施の形態のリードフレームを用いた樹脂封止型半導体装置の図１のＳ−Ｓ´で切断した断面図である。It is sectional drawing cut | disconnected by SS 'of FIG. 1 of the resin-encapsulated semiconductor device using the lead frame of the said embodiment. （ａ）−（ｆ）は、上記実施の形態の樹脂封止型半導体装置の製造工程を示す断面図である。(A)-(f) is sectional drawing which shows the manufacturing process of the resin sealing type semiconductor device of the said embodiment. 本発明に係るダイパッド付きリードフレームの実施の形態２の平面図である。It is a top view of Embodiment 2 of the lead frame with a die pad concerning the present invention. 図５の底面図である。FIG. 6 is a bottom view of FIG. 5. 図５に示すリードフレームの開口部の形成前の平面図である。FIG. 6 is a plan view before the opening of the lead frame shown in FIG. 5 is formed. 図７の底面図である。FIG. 8 is a bottom view of FIG. 7. 上記実施の形態のダイパッド付きリードフレームを用いた樹脂封止型半導体装置の図５のＳ−Ｓ´で切断した断面図である。It is sectional drawing cut | disconnected by SS 'of FIG. 5 of the resin-encapsulated semiconductor device using the lead frame with a die pad of the said embodiment. （ａ）−（ｆ）は、上記実施の形態の樹脂封止型半導体装置の製造工程を示す断面図である。(A)-(f) is sectional drawing which shows the manufacturing process of the resin sealing type semiconductor device of the said embodiment. 本発明に係る環状体付きリードフレームの実施の形態３の平面図である。It is a top view of Embodiment 3 of the lead frame with an annular body according to the present invention. 図１１の底面図である。FIG. 12 is a bottom view of FIG. 11. 上記実施の形態の環状体付きリードフレームを用いた樹脂封止型半導体装置の図１１のＳ−Ｓ´で切断した断面図である。It is sectional drawing cut | disconnected by SS 'of FIG. 11 of the resin-encapsulated semiconductor device using the lead frame with an annular body of the said embodiment. （ａ）−（ｆ）は、上記実施の形態の樹脂封止型半導体装置の製造工程を示す断面図である。(A)-(f) is sectional drawing which shows the manufacturing process of the resin sealing type semiconductor device of the said embodiment. 上記実施の形態２の封止樹脂の流れを模式的に示した断面図である。It is sectional drawing which showed the flow of the sealing resin of the said Embodiment 2 typically. 上記実施の形態１の封止樹脂の流れを模式的に示した断面図である。It is sectional drawing which showed the flow of the sealing resin of the said Embodiment 1 typically. 上記実施の形態２の樹脂封止型半導体装置のクラック等の発生を検証するための比較例に用いた従来のリードフレームの平面図である。It is a top view of the conventional lead frame used for the comparative example for verifying generation | occurrence | production of the crack etc. of the resin-encapsulated semiconductor device of the said Embodiment 2. FIG. 図１７の底面図である。It is a bottom view of FIG. 図１７に示したリードフレームを用いた樹脂封止型半導体装置の断面図である。FIG. 18 is a cross-sectional view of a resin-encapsulated semiconductor device using the lead frame shown in FIG. 17.

符号の説明Explanation of symbols

１０１ リードフレーム
１０２ 枠部
１０３ アウターリード
１０４ インナーリード
１０５ 放熱板
１０６ 開口部
１０７ 半導体素子搭載領域
１０８ ダムバー
１０９ 封止領域
１１０ ダイボンド滴下領域
３０１ 半導体素子
３０２ ダイボンド
３０３ ワイヤ
３０４ 封止樹脂
５０１ ダイパッド付きリードフレーム
５０２ ダイパッド
５０３ 吊りリード
７０１ 連結リング
１１００ 環状体付きリードフレーム
１１０１ 環状体
１１０２ 吊りリード
１１０３ 凸部 DESCRIPTION OF SYMBOLS 101 Lead frame 102 Frame part 103 Outer lead 104 Inner lead 105 Heat sink 106 Opening part 107 Semiconductor element mounting area 108 Dam bar 109 Sealing area 110 Die bond dripping area 301 Semiconductor element 302 Die bond 303 Wire 304 Sealing resin 501 Lead frame with die pad 502 Die pad 503 Suspension lead 701 Connection ring 1100 Lead frame with an annular body 1101 Annular body 1102 Suspension lead 1103 Projection

Claims (7)

複数本のインナーリードと、
前記インナーリードの先端部近傍の下面に接着された放熱板と、
前記放熱板に設けられた複数の開口部と、
前記放熱板上に載置される半導体素子と、
前記半導体素子の複数の電極パッドと前記インナーリードとを電気的に接続する金属細
線と、
前記インナーリードと前記半導体素子と前記金属細線とを封止する封止樹脂とを備え、
前記放熱板と前記半導体素子とは、複数のダイボンド滴下領域において接着され、
前記放熱板の複数の開口部は、前記複数のダイボンド滴下領域各々を挟むように配列され、
前記放熱板の複数の開口部と、前記複数のダイボンド滴下領域は千鳥状に配置される
ことを特徴とする半導体装置。 Multiple inner leads,
A heat sink bonded to the lower surface near the tip of the inner lead;
A plurality of openings provided in the heat sink;
A semiconductor element mounted on the heat sink;
Metal thin wires that electrically connect the plurality of electrode pads of the semiconductor element and the inner leads,
A sealing resin for sealing the inner lead, the semiconductor element, and the fine metal wire;
The heat sink and the semiconductor element are bonded in a plurality of die bond dropping regions,
The plurality of openings of the heat sink are arranged so as to sandwich each of the plurality of die bond dripping regions ,
A plurality of openings of the heat sink and the plurality of die bond dropping regions are arranged in a staggered manner . 前記放熱板の複数の開口部のうち少なくとも一つの開口部は、前記半導体素子の搭載領
域からその一部がはみだしていることを特徴とする請求項１記載の半導体装置。 It said at least one opening of the plurality of openings of the heat sink, claim 1 Symbol mounting semiconductor device is characterized in that its is partially protruding from the mounting region of the semiconductor device. 前記開口部は略矩形であることを特徴とする請求項１または２記載の半導体装置。 The semiconductor device according to claim 1 or 2, wherein said opening is substantially rectangular. 前記開口部の各辺は前記半導体素子の搭載領域の各辺と略４５度傾いて配列されている
ことを特徴とする請求項１乃至３のいずれか一項に記載の半導体装置。 The semiconductor device according to any one of claims 1 to 3 each side of the opening is characterized in that it is arranged inclined sides approximately 45 degrees mounting region of the semiconductor device. 前記開口部の各頂点は丸みを帯びていることを特徴とする請求項３乃至４のいずれか一項に記載の半導体装置。 The semiconductor device according to claim 3, wherein each vertex of the opening is rounded. 前記インナーリードの先端に囲まれ、前記半導体素子の搭載領域を囲繞する環状体をさらに備え、前記環状体の各辺の中央は内側に凸部を有し、前記放熱板の上面と環状体の下面とが接着されていることを特徴とする請求項１乃至５のいずれか一項に記載の半導体装置。 An annular body surrounded by the tip of the inner lead and surrounding the mounting region of the semiconductor element is further provided, the center of each side of the annular body has a convex portion on the inside, and the upper surface of the heat sink and the annular body the semiconductor device according to any one of claims 1 to 5 and the lower surface is characterized in that it is bonded. 前記複数本のインナーリードは各々、複数本のアウターリードに連続することを特徴と
する請求項１乃至６のいずれか一項に記載の半導体装置。 Said plurality of inner leads each semiconductor device according to any one of claims 1 to 6, characterized in that continuous to the plurality of outer leads.
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JPH0878605A (en) * 1994-09-01 1996-03-22 Hitachi Ltd Lead frame and semiconductor integrated circuit device utilizing the same
WO1998031051A1 (en) * 1997-01-14 1998-07-16 Hitachi, Ltd. Semiconductor device and method for manufacturing the same
JPH11354706A (en) * 1998-06-09 1999-12-24 Hitachi Ltd Lead frame, semiconductor device using the lead frame and its manufacture
JP2000174193A (en) * 1998-12-07 2000-06-23 Hitachi Cable Ltd Lead frame with heat sink
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