JPH0595078A - Resin-sealed semiconductor device - Google Patents

Abstract

PURPOSE:To reduce the size of a semiconductor device as required and enhance its heat dissipation properties. CONSTITUTION:Inner leads 9 are formed with a sheet thinner than outer leads 10. The leads are joined with their counterparts respectively. A semiconductor device 6 is mounted on the inner leads 9 by way of an insulation film 5 having a bonding agent 4 on both ends.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin-encapsulated semiconductor device, and more particularly, to cope with a large number of pins and miniaturization of semiconductor elements,
In addition, the present invention relates to a resin-encapsulated semiconductor device for improving heat dissipation.

[0002]

2. Description of the Related Art Conventionally, as shown in FIGS. 3A and 3B, a resin-encapsulated semiconductor device in which heat dissipation of a semiconductor element is improved is mounted on an inner lead 2 of a lead frame and a semiconductor element mounted thereon. The part 3 is adhered via an insulating film 5 made of polyimide or the like having an electrically insulating adhesive 4 on both sides,
Further, after fixing the semiconductor element 6 on the semiconductor element mounting portion 3 with silver paste or the like, the internal lead 2 of the semiconductor element 6 is electrically connected by a bonding wire (hereinafter simply referred to as a wire) 7 such as a gold wire, Then, the semiconductor device is completed by resin-sealing with a resin 8 such as epoxy by a transfer molding method, and then molding the external lead 1 integrally formed with the internal lead 2 to form the external terminal 11B.

In this resin-encapsulated semiconductor device, the semiconductor element mounting portion 3 and the internal lead 2 are adhered to each other via the insulating film 5, so that the heat generated in the semiconductor element 6 is transferred from the semiconductor element mounting portion 3 to the internal lead 2. Can be effectively released,
It enabled the mounting of semiconductor devices with power consumption of about 2 watts.

[0004]

In this conventional resin-sealed semiconductor device, the thickness of the lead frame is set to 0.15 mm or 0.125 m in consideration of the strength of the external leads.
m is usually used, but the pitch of the inner lead tips is about 0.2 mm when the inner lead tips are moved closer to the semiconductor element side due to the miniaturization of the semiconductor element, from the current lead frame processing technology. Is the limit. For this reason,
As miniaturization of semiconductor elements progresses, the wire connecting the semiconductor element and the internal lead has to be lengthened, so that the wire is easily deformed during resin encapsulation and defects such as wire shorts are likely to occur. There was a point.

[0005]

A resin-sealed semiconductor device according to the present invention comprises a semiconductor element fixed on an insulating film,
A thin inner lead provided around the semiconductor element, a thick outer lead connected to the inner lead, a wire connecting the inner lead and the semiconductor element, and the semiconductor element The resin includes a resin that seals the wire, the inner lead, and a part of the outer lead.

[0006]

The present invention will be described below with reference to the drawings. 1A and 1B are a plan view and a sectional view of a resin-encapsulated semiconductor device according to a first embodiment of the present invention, in which the plan view is shown without a resin.

In FIGS. 1A and 1B, the resin-encapsulated semiconductor device has a semiconductor element 6 fixed to an insulating film 5.
A thin inner lead 9 provided around the semiconductor element 6, a thick outer lead 10 connected to the inner lead 9 at a joint portion 12, the semiconductor element 6 and the inner lead 9. It is mainly composed of a wire 7 for connecting the above and a resin 8 such as polyimide for sealing the semiconductor element 6 and the like.
The manufacturing method will be described below.

As a method of joining the inner lead 9 and the outer lead 10, the joining portion 12 of the inner lead 9 and the outer lead 10 is previously plated with gold or the like and joined by thermocompression bonding. Alternatively, this may be joined with solder or the like. Insulating films 5 made of polyimide or the like having an adhesive 4 on both sides are previously adhered to the joined inner leads 9 in this manner. The semiconductor elements 6 are mounted on the insulating films 5, and the wires 7 are used to After being electrically connected to the lead 9, it is resin-molded with an epoxy resin or the like by a transfer molding method. After that, the external leads 10 are molded to form the external terminals 11.

Generally, in the lead frame etching process, the clearance between the leads can be usually processed up to about 80% of the plate thickness, but in the first embodiment, the plate of the inner lead 9 is larger than that of the outer lead 10. Since the thickness of the inner lead is thin, for example, if the thickness of the inner lead is 0.075 mm and the outer lead is 0.15 mm, the clearance between the inner leads can be processed to about 60 μm. If the width is 90 μm, it can be processed up to about 0.15 mm pitch, and the tips of the internal leads can be brought closer to the semiconductor element side compared to the conventional example, and the size of the semiconductor element can be reduced without lengthening the wire. It is possible to deal with Further, since the semiconductor element 6 is mounted on the internal lead 9 via the insulating film 5, heat generated from the semiconductor element 6 passes through the internal lead 9 and the external lead 1
Since it escapes to 0, it is possible to realize a semiconductor device having a heat dissipation property similar to the conventional example.

2A and 2B are a plan view and a sectional view of a resin-sealed semiconductor device according to a second embodiment of the present invention.

In the second embodiment, as in the first embodiment, the inner lead 9A and the outer lead 10A are joined at the joining portion 12, and the insulating film 5A having the adhesive 4 on both sides is further provided.
Is bonded to the inner lead 9A on the surface opposite to the joint 12 between the inner lead 9A and the outer lead 10A. The opposite side of the insulating film 5A to the inner lead 9A is adhered to a heat dissipation plate 13 made of aluminum or the like. It is adhered to the external lead 10A through the insulating film 5A. Furthermore, this heat sink 13
The back surface side of the adhesive surface of the insulating film 5 </ b> A is transfer molded with resin 8 so as to be exposed on the outer surface of the semiconductor device.

In the second embodiment, the heat generated from the semiconductor element 6 not only escapes to the heat dissipation plate 13 through the insulating film 5A and further propagates to the external lead 10A to escape to the outside of the semiconductor device. Since it is exposed, heat can be directly radiated from the heat dissipation plate 13 to the outside, so that it is possible to realize a semiconductor device having higher heat dissipation than the first embodiment.

[0013]

As described above, according to the present invention, since the inner leads are formed to be thinner than the outer leads, the pitch of the tips of the inner leads can be reduced.
Even if the semiconductor element becomes smaller, it is possible to deal with it without making the bonding wire longer. Further, since the semiconductor element and the internal lead, or the semiconductor element and the heat sink are bonded via the insulating film, the heat generated by the semiconductor element can be effectively released to the outside.

[Brief description of drawings]

FIG. 1 is a plan view and a sectional view of a first embodiment of the present invention.

FIG. 2 is a plan view and a sectional view of a second embodiment of the present invention.

FIG. 3 is a plan view and a sectional view of a conventional example.

[Explanation of symbols]

 1 External Lead 2 Internal Lead 3 Semiconductor Element Mounting Part 4 Adhesive 5,5A Insulating Film 6 Semiconductor Element 7 Wire 8 Resin 9,9A Internal Lead 10,10A External Lead 11,11A, 11B External Terminal 12 Bonding Part 13 Heat Sink

Claims (2)

[Claims] 1. A semiconductor element fixed on an insulating film, a thin inner lead provided around the semiconductor element, a thick outer lead connected to the inner lead, and the inner portion. A resin-encapsulated semiconductor device, comprising: a wire connecting a lead and the semiconductor element; and a resin encapsulating the semiconductor element, the wire, the internal lead, and a part of the external lead. 2. The resin-encapsulated semiconductor device according to claim 1, wherein heat dissipation plates are fixed to the lower portions of the inner lead and the outer lead.