CN109888081B - Full-inorganic ultraviolet LED wafer level packaging method - Google Patents
Full-inorganic ultraviolet LED wafer level packaging method Download PDFInfo
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- CN109888081B CN109888081B CN201910162740.8A CN201910162740A CN109888081B CN 109888081 B CN109888081 B CN 109888081B CN 201910162740 A CN201910162740 A CN 201910162740A CN 109888081 B CN109888081 B CN 109888081B
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Abstract
The invention belongs to the related field of semiconductor manufacturing technology, and discloses a full inorganic ultraviolet LED wafer level packaging method, which comprises the following steps: firstly, forming a plurality of glass slurry rings on a glass cover plate by printing or 3D printing technology, obtaining a plurality of glass cavity structures by low-temperature sintering, then attaching a plurality of ultraviolet LED chips on a heat dissipation substrate, then realizing reliable bonding of the glass cavity on the glass cover plate and the heat dissipation substrate by inorganic slurry or metal solder, and finally cutting to obtain the all-inorganic ultraviolet LED packaging product. The invention also discloses a corresponding ultraviolet LED packaging structure. According to the invention, the problems of ultraviolet aging, invalidation and the like of the organic packaging material are effectively avoided, the long-term reliability of the ultraviolet LED device is improved, the packaging integration level of the ultraviolet LED is improved, and the packaging cost is reduced.
Description
Technical Field
The invention belongs to the field related to semiconductor manufacturing technology, and particularly relates to a full-inorganic ultraviolet LED wafer-level packaging method.
Background
Compared with traditional ultraviolet light sources such as mercury lamps, the ultraviolet LED has the advantages of no mercury, environmental protection, low power consumption, controllable wavelength and the like. Ultraviolet LEDs can be divided into light ultraviolet LEDs (more than 300nm) and deep ultraviolet LEDs (less than or equal to 300nm) according to different light-emitting wavelengths. At present, the light ultraviolet LED is widely applied to the fields of printing ink printing, resin curing, inspection, identification and the like, and with the development of the ultraviolet LED technology, the deep ultraviolet LED has wide application prospects in the fields of sterilization, disinfection, water purification, medical cosmetology, biochemical detection and the like.
The LED packaging is an important link from the chip to the product, plays the roles of mechanical support, environmental isolation, electrical interconnection, heat dissipation and light emission, and directly determines the light emitting efficiency and reliability of the ultraviolet LED. Because the ultraviolet LED has short light-emitting wavelength and high energy, the traditional organic packaging material (silica gel, epoxy resin and the like) can be aged and yellowed under the ultraviolet radiation, so that the problems of the transmittance reduction, the bonding failure and the like of the packaging material are caused, and the performance and the long-term reliability of the ultraviolet LED are seriously influenced. To this end, researchers have begun to package uv LEDs with inorganic materials such as glass, ceramic, etc. to avoid uv aging problems. However, the existing ultraviolet LED packaging process still implements the processes of chip mounting, wire bonding, glass cover plate bonding and the like on the ultraviolet LED chip, and has the disadvantages of multiple process steps, low process integration level and high packaging cost, so that the modern packaging requirement of the ultraviolet LED is difficult to meet. Accordingly, there is a need to develop a novel ultraviolet LED wafer level packaging method to better meet the requirement of integrated ultraviolet LED packaging, and especially to solve the above technical problems in the ultraviolet LED packaging process.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides an all-inorganic ultraviolet LED wafer-level packaging method, wherein a glass cavity is directly manufactured on a glass cover plate, and reliable bonding between the glass cavity and a heat dissipation substrate is completed by using inorganic slurry or metal solder, so that an ultraviolet LED all-inorganic sealing structure is realized, various problems caused by ultraviolet aging of organic materials are effectively avoided, the long-term reliability of an ultraviolet LED is improved, the packaging integration level of the ultraviolet LED is improved by using a wafer-level packaging process, and the packaging cost is reduced.
Accordingly, according to one aspect of the present invention, there is provided an all inorganic ultraviolet LED wafer level packaging method, which is characterized by comprising the following steps:
(i) preparing a glass cover plate with a glass cavity: selecting a plane quartz glass sheet as a glass cover plate, printing a plurality of glass slurry rings on the glass cover plate by a 3D printing technology, and then placing the glass cover plate in a high-temperature furnace for sintering, thereby forming a plurality of glass cavity structures on the glass cover plate; in addition, the glass slurry is a mixture of glass powder, ceramic powder and a binder, and the components are set as follows: the glass powder is a low-melting-point glass material with the glass transition temperature lower than 600 ℃ and the mixing amount of the glass material is 60-80% of the total weight of the slurry, the ceramic powder is an alumina material and the mixing amount of the alumina material is 10-30% of the total weight of the slurry, the grain diameters of the glass powder and the ceramic powder are 1-10 mu m, the binder is a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1-5% and 5-30% of the total weight of the slurry respectively;
(ii) uniformly coating the inorganic slurry on the upper end of the glass cavity of the glass cover plate to obtain an inorganic slurry layer with uniform thickness as a bonding layer;
(iii) attaching a plurality of ultraviolet LED chips on a metal layer of a heat dissipation substrate to complete the processes of die bonding, routing or eutectic crystal;
(iv) aligning and pressurizing an inorganic slurry layer on a glass cavity of the glass cover plate and the heat dissipation substrate to enable the ultraviolet LED chip to be located in the glass cavity, and completing bonding through low-temperature curing to realize an ultraviolet LED sealing structure;
(v) and (iv) cutting and slicing the ultraviolet LED packaging wafer with the sealing structure formed in the step (iv) to obtain an all-inorganic ultraviolet LED packaging product.
More preferably, in step (ii), the inorganic slurry material is aluminosilicate, magnesium phosphate, calcium aluminate, etc., the curing temperature is 90-150 ℃, the curing time is 1-3 h, and the thickness of the inorganic slurry layer is 50-200 μm.
According to another aspect of the present invention, another wafer-level packaging method for an all-inorganic ultraviolet LED is provided, wherein the method comprises the following steps:
(a) preparing a glass cover plate with a glass cavity: selecting a plane quartz glass sheet as a glass cover plate, printing a plurality of glass slurry rings on the glass cover plate by a screen printing technology, and then placing the glass cover plate in a high-temperature furnace for sintering, thereby forming a plurality of glass cavity structures on the glass cover plate; in addition, the glass slurry is a mixture of glass powder, ceramic powder and a binder, and the components are set as follows: the glass powder is a low-melting-point glass material with the glass transition temperature lower than 600 ℃ and the mixing amount of the glass material is 60-80% of the total weight of the slurry, the ceramic powder is an alumina material and the mixing amount of the alumina material is 10-30% of the total weight of the slurry, the grain diameters of the glass powder and the ceramic powder are 1-10 mu m, the binder is a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1-4% and 5-20% of the total weight of the slurry respectively;
(b) forming a metal layer at the upper end of the glass cavity of the glass cover plate for metal welding with the heat dissipation substrate;
(c) attaching a plurality of ultraviolet LED chips on a heat dissipation substrate, forming a metal layer on the periphery of the chips on the heat dissipation substrate, and coating solder or pressing a soldering lug on the metal layer to be used as a solder layer;
(d) aligning and pressurizing a metal layer at the upper end of a glass cavity of the glass cover plate and a solder layer on the heat dissipation substrate, so that the ultraviolet LED chip is positioned in the glass cavity, and melting the solder layer through an integral heating or local heating technology, thereby forming an ultraviolet LED sealing structure;
(e) and (d) cutting and slicing the ultraviolet LED packaging wafer with the sealing structure formed in the step (d) to obtain an all-inorganic ultraviolet LED packaging product.
As a further preference, in step (a), the glass paste ring is realized by multiple screen printing, and drying is carried out at 200 ℃ for more than 30min after each printing is completed.
Preferably, in the step (b), the metal layer at the upper end of the glass cavity is prepared by coating and low-temperature sintering nano silver paste, the sintering temperature is lower than 400 ℃, and the thickness of the metal layer is 5-30 μm;
more preferably, in step (c), the coating solder or the soldering lug is made of alloy materials such as gold tin, copper tin, tin silver copper and the like, and the thickness of the solder layer is 100-500 μm;
preferably, in the steps (i) and (a), the sintering process comprises drying at 200-300 ℃ for 1-3 h, heating to 500-800 ℃ and keeping the temperature for 20-60 min, and finally annealing at 250-350 ℃ for more than 30 min.
More preferably, in the steps (i) and (a), the glass cavity formed on the glass cover plate has a height of 0.5 to 2mm and has a circular, square, rectangular or the like shape.
According to another aspect of the invention, a corresponding all-inorganic ultraviolet LED packaging product is also provided.
In general, compared with the existing various ultraviolet LED packaging manufacturing processes, on one hand, the ultraviolet LED packaging process has the advantages that the long-term reliability requirement of the ultraviolet LED can be well met by adopting all-inorganic materials for packaging; on the other hand, by utilizing the wafer level packaging technology and optimizing the key process conditions, the ultraviolet LED wafer level packaging can be realized, the ultraviolet LED packaging integration level can be obviously improved, and the packaging cost is reduced.
Drawings
FIG. 1 is a process flow diagram of an all inorganic ultraviolet LED wafer level packaging method constructed in accordance with a preferred embodiment;
fig. 2 is a process flow diagram of an all inorganic ultraviolet LED wafer level packaging method constructed in accordance with another preferred embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Aiming at the defects or improvement requirements of the traditional LED packaging technology, the invention mainly aims to provide an all-inorganic ultraviolet LED wafer-level packaging method, so as to solve the problems of ultraviolet aging, failure and the like of organic materials in the existing ultraviolet LED packaging, obviously improve the integration level of ultraviolet LED packaging and reduce the packaging cost.
Specific examples are given below to more clearly explain the process flow and the important mechanism and key process conditions of the present invention in detail.
Example 1
Referring to fig. 1, embodiment 1 provides an all inorganic ultraviolet LED wafer level packaging method, which may exemplarily include the following steps:
step 1, firstly preparing glass slurry, mixing and fully stirring glass powder, ceramic powder and a binder, wherein the components are as follows: the glass powder is low-melting-point borosilicate glass, the mixing amount of the borosilicate glass is 70% of the total weight of the slurry, the ceramic powder is alumina material, the mixing amount of the alumina material is 20% of the total weight of the slurry, the particle sizes of the glass powder and the ceramic powder are 5-10 mu m, the binder is a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 2% and 8% of the total weight of the slurry respectively; then selecting a quartz glass sheet with the thickness of 0.5mm as a glass cover plate 11, printing a plurality of circular glass slurry rings on the glass cover plate 11 by a 3D printing technology, then placing the glass cover plate 11 in a high-temperature furnace, firstly drying at 250 ℃ for 2h, then heating to 700 ℃ and preserving heat for 30min, and finally annealing at 300 ℃ for 1h, thereby forming a plurality of glass cavities 12 on the glass cover plate 11, wherein the height of the glass cavities is 1 mm;
step 2, uniformly coating the aluminosilicate inorganic slurry on the upper end of the glass cavity of the glass cover plate to obtain an inorganic slurry layer with uniform thickness as a bonding layer 13, wherein the thickness is 100 mu m;
step 3, taking the ceramic substrate as a heat dissipation substrate 15, and eutectic-bonding the multiple flip ultraviolet LED chips 14 on the corresponding circuit layers of the heat dissipation substrate 15 by using an eutectic machine;
step 4, the glass cavity 12 of the glass cover plate 11 corresponds to the ultraviolet LED chips 14 on the ceramic substrate one by one, so that the ultraviolet LED chips 14 are positioned in the glass cavity 12, and are cured for 2 hours at the temperature of 100 ℃ through the bonding layer 13 to complete bonding, and an ultraviolet LED sealing structure is realized;
and 5, cutting and slicing the ultraviolet LED packaging wafer with the sealing structure by using a cutting machine to obtain an all-inorganic ultraviolet LED packaging product 16.
Example 2
Referring to fig. 2, the embodiment 2 provides an all inorganic ultraviolet LED wafer level packaging method, which may exemplarily include the following steps:
step 1, firstly preparing glass slurry, mixing and fully stirring glass powder, ceramic powder and a binder, wherein the components are as follows: the glass powder is low-melting-point borosilicate glass, the mixing amount of the borosilicate glass is 65% of the total weight of the slurry, the ceramic powder is alumina material, the mixing amount of the alumina material is 20% of the total weight of the slurry, the grain diameters of the glass powder and the ceramic powder are 5-10 mu m, the binder is a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 5% and 10% of the total weight of the slurry respectively; then selecting a quartz glass sheet with the thickness of 0.5mm as a glass cover plate 21, printing a square glass slurry ring on the glass cover plate 21 by multiple screen printing, drying at 200 ℃ for 30min after each printing, then placing the glass cover plate 21 in a high-temperature furnace, drying at 300 ℃ for 2h, heating to 750 ℃ and preserving heat for 40min, and finally annealing at 350 ℃ for 2h, thereby forming a plurality of glass cavities 22 on the glass cover plate 21, wherein the height of the glass cavities is 0.6 mm;
step 2, coating and sintering nano silver paste at a low temperature for 20min at 300 ℃ on the upper end of the glass cavity 22 of the glass cover plate 21, so as to form a sintered silver layer as a metal layer 23 for welding, wherein the thickness of the sintered silver layer is 20 microns;
step 3, selecting a ceramic substrate as a heat dissipation substrate 25, attaching a plurality of ultraviolet LED chips 24 which are normally installed on the heat dissipation substrate 25 through a die bonding and routing process, forming a metal layer 26 on the periphery of the chips on the heat dissipation substrate 25, and coating gold-tin solder on the metal layer 26 as a solder layer 27 with the thickness of 200 microns;
step 4, aligning and pressurizing the metal layer 23 at the upper end of the glass cavity 22 of the glass cover plate 21 and the solder layer 26 on the heat dissipation substrate 25, so that the ultraviolet LED chip 24 is positioned in the glass cavity 22, and melting the solder layer 27 through an induction local heating technology, thereby forming an ultraviolet LED sealing structure;
and 5, cutting and slicing the ultraviolet LED packaging wafer with the sealing structure by using a cutting machine to obtain an all-inorganic ultraviolet LED packaging product 28.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (7)
1. An all-inorganic ultraviolet LED wafer level packaging method is characterized by comprising the following steps:
(a) preparing a glass cover plate with a glass cavity: selecting a planar quartz glass sheet as a glass cover plate, printing a plurality of three-dimensional glass slurry rings on the glass cover plate as a cavity substrate by a 3D printing technology, and forming a plurality of glass cavity structures on the glass cover plate by a sintering process, wherein the height of each glass cavity is 0.5-2 mm; in addition, the glass slurry is a mixture of glass powder, ceramic powder and a binder, and the components are set as follows: the glass powder is a low-melting-point glass material with the glass transition temperature lower than 600 ℃ and the mixing amount of the glass material is 60-80% of the total weight of the slurry, the ceramic powder is an alumina material and the mixing amount of the alumina material is 10-30% of the total weight of the slurry, the grain diameters of the glass powder and the ceramic powder are 1-10 mu m, the binder is a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1-5% and 5-30% of the total weight of the slurry respectively;
(b) uniformly coating the inorganic slurry on the upper end of the glass cavity of the glass cover plate to obtain an inorganic slurry layer with uniform thickness as a bonding layer;
(c) attaching a plurality of ultraviolet LED chips on a metal layer of a heat dissipation substrate to complete the processes of die bonding, routing or eutectic crystal;
(d) aligning and pressurizing an inorganic slurry layer on a glass cavity of the glass cover plate and the heat dissipation substrate to enable the ultraviolet LED chip to be located in the glass cavity, and completing bonding through low-temperature curing to realize an ultraviolet LED sealing structure;
(e) and (d) cutting and slicing the ultraviolet LED packaging wafer with the sealing structure formed in the step (d) to obtain an all-inorganic ultraviolet LED packaging product.
2. The method of claim 1, wherein the inorganic paste is aluminosilicate, magnesium phosphate or calcium aluminate, the curing temperature is 90-150 ℃, the curing time is 1-3 hours, and the thickness of the inorganic paste layer is 50-200 μm.
3. An all-inorganic ultraviolet LED wafer level packaging method is characterized by comprising the following steps:
(a) preparing a glass cover plate with a glass cavity: selecting a plane quartz glass sheet as a glass cover plate, printing a plurality of three-dimensional glass slurry rings on the glass cover plate as a cavity substrate by a screen printing technology, and forming a plurality of glass cavity structures on the glass cover plate by a sintering process, wherein the height of each glass cavity is 0.5-2 mm; in addition, the glass slurry is a mixture of glass powder, ceramic powder and a binder, and the components are set as follows: the glass powder is a low-melting-point glass material with the glass transition temperature lower than 600 ℃ and the mixing amount of the glass material is 60-80% of the total weight of the slurry, the ceramic powder is an alumina material and the mixing amount of the alumina material is 10-30% of the total weight of the slurry, the grain diameters of the glass powder and the ceramic powder are 1-10 mu m, the binder is a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1-4% and 5-20% of the total weight of the slurry respectively;
(b) forming a metal layer at the upper end of the glass cavity of the glass cover plate for metal welding with the heat dissipation substrate;
(c) attaching a plurality of ultraviolet LED chips on a heat dissipation substrate, forming a metal layer on the periphery of the chips on the heat dissipation substrate, and coating solder or pressing a soldering lug on the metal layer to be used as a solder layer;
(d) aligning and pressurizing a metal layer at the upper end of a glass cavity of the glass cover plate and a solder layer on the heat dissipation substrate, so that the ultraviolet LED chip is positioned in the glass cavity, and melting the solder layer through an integral heating or local heating technology, thereby forming an ultraviolet LED sealing structure;
(e) and (d) cutting and slicing the ultraviolet LED packaging wafer with the sealing structure formed in the step (d) to obtain an all-inorganic ultraviolet LED packaging product.
4. The all-inorganic ultraviolet LED wafer level packaging method of claim 3, wherein the glass paste ring is realized by multiple screen printing, and drying is carried out at 200 ℃ for more than 30min after each printing is completed.
5. The all-inorganic ultraviolet LED wafer level packaging method of claim 3, wherein the metal layer at the upper end of the glass cavity is manufactured by coating and low-temperature sintering of nano-silver paste, the sintering temperature is lower than 400 ℃, and the thickness of the metal layer is 5-30 μm.
6. The method for packaging an all-inorganic ultraviolet LED wafer level as claimed in claim 3, wherein the coating solder or the soldering lug is Au-Sn, Cu-Sn or Sn-Ag-Cu alloy material, and the thickness of the solder layer is 100-500 μm.
7. The method for packaging an all-inorganic ultraviolet LED wafer level as claimed in claim 1 or 3, wherein the sintering process comprises drying at 200-300 ℃ for 1-3 h, heating to 500-800 ℃ for 20-60 min, and annealing at 250-350 ℃ for more than 30 min.
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| CN111477733A (en) * | 2020-04-26 | 2020-07-31 | 深圳市环基实业有限公司 | Chip packaging method |
| CN113675316A (en) * | 2021-07-05 | 2021-11-19 | 深圳大道半导体有限公司 | UV-LED device and manufacturing method thereof |
| CN113725343A (en) * | 2021-09-01 | 2021-11-30 | 深圳市佑明光电有限公司 | Efficient deep ultraviolet LED light source packaging structure and packaging method thereof |
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| CN101497422B (en) * | 2009-01-20 | 2011-09-14 | 东南大学 | Low-temperature glass solder bonding and encapsulating method based on disc level glass micro-chamber |
| CN102241388B (en) * | 2011-05-18 | 2015-02-18 | 中国科学院上海微系统与信息技术研究所 | MEMS (micro electro mechanical system) wafer-level three-dimensional mixing integration packaging structure and method |
| CN205319182U (en) * | 2015-11-18 | 2016-06-15 | 佛山市南海区联合广东新光源产业创新中心 | Ultraviolet LED device |
| CN105845814B (en) * | 2016-05-04 | 2019-03-05 | 华中科技大学 | A kind of ultraviolet LED encapsulating structure and preparation method thereof |
| CN109285938B (en) * | 2018-10-10 | 2020-09-08 | 华中科技大学 | High-thermal-stability chip-level LED packaging method and product thereof |
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