CN110828633A - Deep ultraviolet LED wafer level packaging method - Google Patents
Deep ultraviolet LED wafer level packaging method Download PDFInfo
- Publication number
- CN110828633A CN110828633A CN201911086034.6A CN201911086034A CN110828633A CN 110828633 A CN110828633 A CN 110828633A CN 201911086034 A CN201911086034 A CN 201911086034A CN 110828633 A CN110828633 A CN 110828633A
- Authority
- CN
- China
- Prior art keywords
- deep ultraviolet
- ultraviolet led
- ceramic substrate
- glass sheet
- solder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 32
- 239000000919 ceramic Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 229910052751 metal Inorganic materials 0.000 claims abstract description 32
- 239000002184 metal Substances 0.000 claims abstract description 32
- 229910000679 solder Inorganic materials 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052709 silver Inorganic materials 0.000 claims abstract description 18
- 239000004332 silver Substances 0.000 claims abstract description 18
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 10
- 238000007650 screen-printing Methods 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000005459 micromachining Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000009713 electroplating Methods 0.000 claims description 3
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical group [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910000969 tin-silver-copper Inorganic materials 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical class [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000010992 reflux Methods 0.000 claims description 2
- 230000007774 longterm Effects 0.000 abstract description 4
- 230000032683 aging Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a deep ultraviolet LED wafer level packaging method. The packaging method comprises the following steps: firstly, forming an array annular nano silver paste layer on a wafer-level quartz glass sheet through screen printing, and sintering at a low temperature to obtain an annular silver layer structure; then preparing a planar ceramic substrate by a semiconductor micromachining process, and manufacturing an array metal box dam on the ceramic substrate to realize a three-dimensional ceramic substrate; then, attaching a plurality of deep ultraviolet LED chips to the metal circuit layer in the cavity of the ceramic substrate dam; then, a solder layer is formed on the silver layer of the quartz glass sheet by printing metal solder, the upper surface of the ceramic substrate dam and the solder layer of the quartz glass sheet are aligned and pressurized, and reliable welding is realized by heating; and finally, cutting and slicing to obtain the deep ultraviolet LED product. According to the invention, the deep ultraviolet LED full-inorganic airtight packaging is realized, the long-term reliability of a deep ultraviolet LED device is improved, more importantly, a low-cost and large-scale packaging method is provided, and the manufacturing cost of the deep ultraviolet LED packaging is reduced.
Description
Technical Field
The invention belongs to the field related to semiconductor manufacturing technology, and particularly relates to a deep ultraviolet LED packaging method.
Background
Compared with traditional ultraviolet light sources such as mercury lamps and fluorescent lamps, the ultraviolet light emitting diode (UV-LED) has the advantages of energy conservation, environmental protection, long service life, small volume, controllable wavelength and the like. Ultraviolet LEDs can be divided into light ultraviolet LEDs (more than 300nm) and deep ultraviolet LEDs (less than or equal to 300nm) according to different light-emitting wavelengths. The deep ultraviolet LED has wide application prospect in the fields of sterilization, disinfection, water purification, medical cosmetology, biochemical detection and the like.
For the deep ultraviolet LED package, the problems of aging, yellowing, and the like of the conventional organic package materials (silica gel, epoxy resin, and the like) occur due to the short light emitting wavelength and high energy of the deep ultraviolet LED, and the performance and long-term reliability of the deep ultraviolet LED are reduced. For this reason, inorganic materials such as glass and ceramic are used to package the deep ultraviolet LED, so as to improve the reliability of the device. However, the existing deep ultraviolet LED is still in a device level packaging level, chip mounting and glass cover plate bonding are required to be performed independently, the integration level of the whole process is low, the product consistency is poor, and the packaging requirement of the deep ultraviolet LED is difficult to meet. Therefore, researchers also develop a deep ultraviolet LED wafer level packaging method, but the existing method is relatively complex in process, high in cost and not suitable for large-scale packaging. Accordingly, there is a need to improve the existing deep ultraviolet LED wafer level packaging technology to improve the reliability of the deep ultraviolet LED and better meet the requirement of the deep ultraviolet LED integrated package.
SUMMARY OF THE PATENT FOR INVENTION
Aiming at the defects or improvement requirements in the prior art, the invention provides a deep ultraviolet LED wafer level packaging method, which is characterized in that a silver layer structure of an array is manufactured on quartz glass to serve as a metalized graph, and wafer level bonding between the quartz glass and a ceramic substrate is realized by welding with solder, so that the problems of ultraviolet aging and the like of organic materials can be avoided, the long-term reliability of a deep ultraviolet LED is improved, the deep ultraviolet LED wafer level packaging is realized, the packaging integration level is improved, and the packaging cost is reduced.
Accordingly, according to an aspect of the present invention, there is provided a deep ultraviolet LED wafer level packaging method, comprising the steps of:
(i) selecting planar quartz glass as a wafer-level glass sheet, printing an array annular nano silver paste layer on the quartz glass sheet by screen printing, and then placing the glass sheet in a high-temperature furnace for sintering, thereby forming an array annular silver layer structure on the glass sheet for welding metal solder;
(ii) preparing a planar ceramic substrate by a semiconductor micromachining process, wherein the ceramic substrate is provided with a metal circuit layer and a conductive through hole, and manufacturing an array metal dam on the ceramic substrate to realize a three-dimensional ceramic substrate;
(iii) respectively attaching a plurality of deep ultraviolet LED chips to the metal circuit layer in the cavity of the ceramic substrate dam to finish the processes of die bonding, routing or eutectic crystal;
(iv) forming a solder layer with uniform thickness on the silver layer of the glass sheet by screen printing metal solder, aligning and pressurizing the upper surface of the dam of the ceramic substrate and the solder layer of the glass sheet, and completing solder welding through integral reflux or local heating to realize the airtight packaging of the deep ultraviolet LED;
(v) and (4) cutting and slicing the wafer-level glass sheet and the ceramic substrate which are welded in the step (iv) to obtain the fully inorganic hermetically packaged deep ultraviolet LED product.
Further, in the step (i), the sintering temperature of the nano silver paste sintered on the quartz glass sheet is 300-600 ℃, the sintering time is 30-90min, the thickness of the silver layer after sintering is 20-100 μm, and the annular structure of the silver layer is square or circular and corresponds to the upper surface structure of the ceramic substrate dam.
Further, in the step (ii), the metal dam on the ceramic substrate is manufactured by a direct copper electroplating or welding dam process, and the height of the metal dam is 0.5-1.5 mm.
Further, in the step (iv), the metal solder printed on the silver layer of the quartz glass sheet is gold tin, tin silver copper or copper tin alloy solder, and the thickness of the solder layer is 30-200 μm.
Further, in the step (iv), the solder welding is performed under vacuum, nitrogen or inert gas atmosphere.
Furthermore, the ceramic substrate is pre-cut before the deep ultraviolet LED chip is mounted, only the glass sheet is cut after wafer level packaging, and the cutting position is consistent with the pre-cutting position of the ceramic substrate.
Generally, compared with the prior art, the technical scheme of the invention has the advantages that the problems of aging and failure of organic materials are avoided and the long-term reliability of the deep ultraviolet LED is improved by reliably welding the metal solder; on the other hand, the wafer-level bonding between the glass sheet and the ceramic substrate is realized by manufacturing the silver layer structure of the array on the wafer-level glass sheet, the deep ultraviolet LED packaging integration level is improved, the packaging process cost is reduced, and the method is suitable for large-scale packaging and manufacturing.
Drawings
Fig. 1 is a schematic diagram of a deep ultraviolet LED wafer level packaging method according to the present invention.
Fig. 2 is a schematic diagram of another deep ultraviolet LED wafer level packaging method according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and are not intended to limit the present invention. In addition, the technical features mentioned in the embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.
Example 1
Referring to fig. 1, embodiment 1 provides a deep ultraviolet LED wafer level packaging method, which may exemplarily include the following steps:
step 1, selecting planar quartz glass as a wafer-level glass sheet 11, printing an array of square annular nano silver paste layers on the quartz glass sheet 11 through screen printing, placing the glass sheet 11 in a high-temperature furnace, and sintering at 300 ℃ for 30min to form an array of annular silver layers 12 on the glass sheet 1;
step 2, preparing a planar ceramic substrate 14 through a semiconductor micromachining process, manufacturing a metal circuit layer 15 and a conductive through hole 16 on the ceramic substrate 14, manufacturing a metal dam 17 on the ceramic substrate 14 through multiple times of copper electroplating, wherein the height of the metal dam 17 is 0.6mm, and then precutting the ceramic substrate 14 to form a precut line;
step 3, attaching a plurality of deep ultraviolet LED chips 18 on the metal circuit layer 15 in the cavity of the metal dam 17 of the ceramic substrate 14, and realizing electrical interconnection through the eutectic layer 19;
step 4, forming a solder layer 13 with uniform thickness on the silver layer 12 of the glass sheet 11 by screen printing of tin-silver-copper solder, wherein the thickness is 50 μm, aligning and pressurizing the upper surface of the metal dam 17 of the ceramic substrate 14 and the solder layer 13 of the glass sheet 11, and completing solder welding through integral reflow in a vacuum environment;
and 5, cutting and slicing the welded glass sheet 11, wherein the cutting position is consistent with the pre-cutting position of the ceramic substrate 14, and finally, cutting and slicing of the wafer-level packaging structure are completed, so that the fully inorganic hermetically packaged deep ultraviolet LED product 20 is obtained.
Example 2
Referring to fig. 1, the embodiment 2 provides a deep ultraviolet LED wafer level packaging method, which may exemplarily include the following steps:
step 1, selecting planar quartz glass as a wafer-level glass sheet 21, printing an array of circular annular nano silver paste layers on the quartz glass sheet 21 through screen printing, placing the glass sheet 21 in a high-temperature furnace, and sintering at 400 ℃ for 20min to form an array of annular silver layers 22 on the glass sheet 21;
step 2, preparing a planar ceramic substrate 24 by a semiconductor micromachining process, manufacturing a metal circuit layer 25 and a conductive through hole 26 on the ceramic substrate 24, realizing reliable welding of a metal dam 27 on the ceramic substrate 24 through a welding layer 28, wherein the height of the metal dam 27 is 0.8mm, and then precutting the ceramic substrate 24 to form a precut line;
step 3, attaching a plurality of deep ultraviolet LED chips 29 on the metal circuit layer 25 in the cavity of the metal dam 27 of the ceramic substrate 24, and realizing electrical interconnection through the eutectic layer 30;
step 4, forming a solder layer 23 with uniform thickness on the silver layer 22 of the glass sheet 21 by screen printing gold-tin solder, wherein the thickness is 30 μm, aligning and pressurizing the upper surface of the metal dam 27 of the ceramic substrate 24 and the solder layer 23 of the glass sheet 21, and completing solder welding by induction local heating in a nitrogen environment;
and 5, cutting and slicing the welded glass sheet 21, wherein the cutting position is consistent with the pre-cutting position of the ceramic substrate 24, and finally, cutting and slicing of the wafer-level packaging structure are completed, so that the fully inorganic hermetically packaged deep ultraviolet LED product 31 is obtained.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of this invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of this invention should be included within the scope of protection of this invention.
Claims (6)
1. A deep ultraviolet LED wafer level packaging method is characterized by comprising the following steps:
(a) selecting planar quartz glass as a wafer-level glass sheet, printing an array annular nano silver paste layer on the quartz glass sheet by screen printing, and then placing the glass sheet in a high-temperature furnace for sintering, thereby forming an array annular silver layer structure on the glass sheet for welding metal solder;
(b) preparing a planar ceramic substrate by a semiconductor micromachining process, wherein the ceramic substrate is provided with a metal circuit layer and a conductive through hole, and manufacturing an array metal dam on the ceramic substrate to realize a three-dimensional ceramic substrate;
(c) respectively attaching a plurality of deep ultraviolet LED chips to the metal circuit layer in the cavity of the ceramic substrate dam to finish the processes of die bonding, routing or eutectic crystal;
(d) forming a solder layer with uniform thickness on the silver layer of the glass sheet by printing metal solder, aligning and pressurizing the upper surface of the dam of the ceramic substrate and the solder layer of the glass sheet, and completing solder welding through integral reflux or local heating to realize the airtight packaging of the deep ultraviolet LED;
(e) and (d) cutting and slicing the wafer-level glass sheets and the ceramic substrate which are welded in the step (d) to obtain the fully inorganic hermetically packaged deep ultraviolet LED product.
2. The deep ultraviolet LED wafer level packaging method as claimed in claim 1, wherein the sintering temperature for sintering the nano silver paste on the quartz glass sheet is 300-600 ℃, the sintering time is 30-90min, the thickness of the silver layer after sintering is 20-100 μm, and the annular structure of the silver layer is square or circular and corresponds to the upper surface structure of the ceramic substrate dam.
3. The deep ultraviolet LED wafer level packaging method of claim 1, wherein the metal dam on the ceramic substrate is manufactured by direct copper electroplating or welding dam process, and the height of the metal dam is 0.5-1.5 mm.
4. The deep ultraviolet LED wafer level packaging method of claim 1, wherein the metal solder printed on the silver layer of the quartz glass sheet is gold tin, tin silver copper or copper tin alloy solder, and the thickness of the solder layer is 30-200 μm.
5. The deep ultraviolet LED wafer level packaging method of claim 1, wherein the solder bonding is performed under vacuum, nitrogen or inert gas environment.
6. The deep ultraviolet LED wafer-level packaging method according to claim 1, wherein the ceramic substrate is pre-cut before the deep ultraviolet LED chip is mounted, only the glass sheet is cut after the wafer-level packaging, and the cutting position is consistent with the pre-cutting position of the ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911086034.6A CN110828633A (en) | 2019-11-08 | 2019-11-08 | Deep ultraviolet LED wafer level packaging method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911086034.6A CN110828633A (en) | 2019-11-08 | 2019-11-08 | Deep ultraviolet LED wafer level packaging method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110828633A true CN110828633A (en) | 2020-02-21 |
Family
ID=69553452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911086034.6A Pending CN110828633A (en) | 2019-11-08 | 2019-11-08 | Deep ultraviolet LED wafer level packaging method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110828633A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477733A (en) * | 2020-04-26 | 2020-07-31 | 深圳市环基实业有限公司 | Chip packaging method |
| CN111792942A (en) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | Sintering welding method for box dam on aluminum nitride ceramic substrate |
| CN112614922A (en) * | 2020-12-16 | 2021-04-06 | 松山湖材料实验室 | Ultraviolet integrated light source with reflecting cup structure and manufacturing method thereof |
| CN113451481A (en) * | 2021-06-28 | 2021-09-28 | 江西新正耀光学研究院有限公司 | Manufacturing method of deep ultraviolet light emitting element |
| CN115425938A (en) * | 2022-09-28 | 2022-12-02 | 天通瑞宏科技有限公司 | High-reliability CSP packaging method and surface acoustic wave filter |
| CN117334795A (en) * | 2023-09-30 | 2024-01-02 | 江苏富乐华功率半导体研究院有限公司 | Preparation and application of high-power LED packaging structure based on ceramic surrounding dam |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342353A (en) * | 2017-06-06 | 2017-11-10 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | One kind focuses on ultraviolet LED encapsulating structure and preparation method thereof |
| CN107863436A (en) * | 2017-10-13 | 2018-03-30 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate containing metallic cavity and preparation method thereof |
| CN108598246A (en) * | 2018-07-13 | 2018-09-28 | 广东格斯泰气密元件有限公司 | A kind of SMD-UV-LED of vacuum tight encapsulation |
| CN109728154A (en) * | 2019-01-24 | 2019-05-07 | 华中科技大学 | A kind of full-inorganic White-light LED package structure and preparation method thereof |
| CN109904138A (en) * | 2019-03-04 | 2019-06-18 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate and preparation method thereof |
| CN110190036A (en) * | 2019-06-10 | 2019-08-30 | 华天慧创科技（西安）有限公司 | A kind of wafer level packaging structure and packaging method of floodlighting mould group |
-
2019
- 2019-11-08 CN CN201911086034.6A patent/CN110828633A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107342353A (en) * | 2017-06-06 | 2017-11-10 | 佛山市香港科技大学Led-Fpd工程技术研究开发中心 | One kind focuses on ultraviolet LED encapsulating structure and preparation method thereof |
| CN107863436A (en) * | 2017-10-13 | 2018-03-30 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate containing metallic cavity and preparation method thereof |
| CN108598246A (en) * | 2018-07-13 | 2018-09-28 | 广东格斯泰气密元件有限公司 | A kind of SMD-UV-LED of vacuum tight encapsulation |
| CN109728154A (en) * | 2019-01-24 | 2019-05-07 | 华中科技大学 | A kind of full-inorganic White-light LED package structure and preparation method thereof |
| CN109904138A (en) * | 2019-03-04 | 2019-06-18 | 武汉利之达科技股份有限公司 | A kind of three-dimensional ceramic substrate and preparation method thereof |
| CN110190036A (en) * | 2019-06-10 | 2019-08-30 | 华天慧创科技（西安）有限公司 | A kind of wafer level packaging structure and packaging method of floodlighting mould group |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111477733A (en) * | 2020-04-26 | 2020-07-31 | 深圳市环基实业有限公司 | Chip packaging method |
| CN111792942A (en) * | 2020-05-14 | 2020-10-20 | 山西华微紫外半导体科技有限公司 | Sintering welding method for box dam on aluminum nitride ceramic substrate |
| CN112614922A (en) * | 2020-12-16 | 2021-04-06 | 松山湖材料实验室 | Ultraviolet integrated light source with reflecting cup structure and manufacturing method thereof |
| CN113451481A (en) * | 2021-06-28 | 2021-09-28 | 江西新正耀光学研究院有限公司 | Manufacturing method of deep ultraviolet light emitting element |
| CN113451481B (en) * | 2021-06-28 | 2022-09-23 | 江西新正耀科技有限公司 | Manufacturing method of deep ultraviolet light emitting element |
| CN115425938A (en) * | 2022-09-28 | 2022-12-02 | 天通瑞宏科技有限公司 | High-reliability CSP packaging method and surface acoustic wave filter |
| CN117334795A (en) * | 2023-09-30 | 2024-01-02 | 江苏富乐华功率半导体研究院有限公司 | Preparation and application of high-power LED packaging structure based on ceramic surrounding dam |
| CN117334795B (en) * | 2023-09-30 | 2024-02-20 | 江苏富乐华功率半导体研究院有限公司 | Preparation and application of high-power LED packaging structure based on ceramic surrounding dam |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110828633A (en) | Deep ultraviolet LED wafer level packaging method | |
| CN209896097U (en) | Deep ultraviolet LED all-inorganic airtight packaging structure | |
| CN103579477B (en) | Light emitting diode flip chip packaging method based on through hole technology | |
| CN102185091B (en) | Light-emitting diode device and manufacturing method thereof | |
| TWI328293B (en) | Light emitting diode and wafer level package method, wafer level bonding method thereof and circuit structure for wafer level package | |
| CN106784243B (en) | A kind of deep ultraviolet LED packaging and preparation method thereof | |
| CN110521011A (en) | The manufacturing method of optical semiconductor device and optical semiconductor device | |
| TWI651872B (en) | Ultraviolet light emitting diode chip package structure | |
| CN109888081B (en) | Full-inorganic ultraviolet LED wafer level packaging method | |
| EP2515352B1 (en) | A manufacture method for a surface mounted power led support | |
| CN211654858U (en) | Dam ceramic substrate for chip packaging and chip packaging structure | |
| KR20190084907A (en) | The structures of LED package for transparent LED display | |
| CN102194801A (en) | Packaging structure of light-emitting diode emitting light in forward direction and formation method thereof | |
| CN105304576A (en) | Ceramic substrate, package substrate, semiconductor chip package and manufacturing method thereof | |
| CN102903705A (en) | Light emitting diode packaging structure and manufacturing method thereof | |
| CN102646774A (en) | Light emitting diode element and manufacturing method thereof | |
| CN203503708U (en) | Sapphire base LED encapsulation structure | |
| US20120012873A1 (en) | Light emitting diode package for microminiaturization | |
| KR100865835B1 (en) | Led reflector molding process, construction, and loader thereof | |
| CN204167364U (en) | High heat conduction aluminium nitride full porcelain LED shell | |
| CN102270734A (en) | Method for manufacturing surface mounting type power LED (light emitting diode) support and product thereof | |
| CN202205814U (en) | Light emitting diode device | |
| TWI565101B (en) | Light emitting diode package and method for forming the same | |
| CN104900780A (en) | LED roll-to-roll packaging module | |
| EP3764487A1 (en) | Light emitting element mounting substrate and light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200221 |