CN211654858U - Dam ceramic substrate for chip packaging and chip packaging structure - Google Patents
Dam ceramic substrate for chip packaging and chip packaging structure Download PDFInfo
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- CN211654858U CN211654858U CN202020560920.XU CN202020560920U CN211654858U CN 211654858 U CN211654858 U CN 211654858U CN 202020560920 U CN202020560920 U CN 202020560920U CN 211654858 U CN211654858 U CN 211654858U
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Abstract
The utility model discloses a box dam ceramic substrate and wafer packaging structure that wafer encapsulation was used. The chip packaging structure comprises a glass cover plate, a dam ceramic substrate and a chip; the box dam ceramic substrate comprises a ceramic substrate and a box dam made of the box dam substrate, the ceramic substrate comprises a ceramic plate and a metallization pattern layer arranged on the surface of the ceramic plate, and the box dam is fixed on the top surface of the ceramic substrate; the box dam substrate adopts a copper-clad plate, and the copper-clad plate comprises a copper foil and a resin-containing substrate; the inner hole of the box dam is covered with a metal layer, the ultraviolet LED chip is attached to the metallization pattern layer on the top surface of the ceramic plate, and the glass cover plate is fixed to the top of the box dam. The utility model utilizes the copper-clad plate as the base plate of the dam, the warp is not easy to deform in the processing process, the base plate of the dam is convenient to process and cut, and the cutter is not damaged; the metal layer on the inner wall of the dam hole can reflect light emitted by the wafer, and the light emitting efficiency of the wafer is high.
Description
[ technical field ]
The utility model relates to a wafer encapsulation especially relates to a box dam ceramic substrate and wafer packaging structure that wafer encapsulation was used.
[ background art ]
The ultraviolet light emitting diode (UV-LED) has the advantages of energy conservation, environmental protection, long service life, small volume, controllable wavelength and the like. The light-emitting wavelength of the deep ultraviolet LED is less than 300nm, and the deep ultraviolet LED can be applied to the fields of sterilization, disinfection, water purification, biochemical detection and the like.
The metal box dam on the three-dimensional ceramic substrate can be manufactured by a direct copper electroplating process, the height of the metal box dam is 400-800 mu m, multiple times of electroplating are needed, the process is complex, the cost is high, and the stress of the multiple times of electroplating enables the substrate to easily generate defects such as warping, tensile cracking and plate breaking. The single-piece manufactured and single-piece bonded box dam has the advantages of high assembly process difficulty, low production efficiency and low bonding precision of the box dam.
The invention with the application number of CN201610944502.9 discloses a preparation method of a box dam ceramic substrate for packaging ultraviolet LEDs, which comprises the following steps: (1) manufacturing a plurality of independent circuits on the surface of the ceramic substrate, wherein the independent circuits are separated from each other at intervals; a plurality of through holes are formed in the box dam substrate, and the inner diameter of each through hole at the bottom end is larger than the maximum width of the independent line; (2) gluing the bottom surface of the base plate of the box dam to form a bonding layer; (3) clamping the bonding layer between the bottom surface of the dam substrate and the surface of the ceramic substrate; (4) and after the bonding layer is solidified, cutting the ceramic substrate and the box dam substrate which are overlapped and fixed together to obtain a finished product.
The ceramic substrate and the box dam substrate which are fixed together in a stacked mode are cut to obtain a finished product, the production efficiency of the box dam is improved, but the box dam substrate is made of metal or ceramic materials and has the following defects: the difficulty of processing or cutting the inner hole of the box dam by the metal box dam substrate is high, and the cost is high; the ceramic box dam substrate with the box dam inner hole is easy to deform and warp in the sintering process, and the ceramic box dam can absorb ultraviolet light emitted by the wafer to influence the light emitting efficiency of the ultraviolet LED wafer.
[ summary of the invention ]
The to-be-solved technical problem of the utility model is to provide a box dam ceramic substrate that wafer encapsulation that box dam base plate non-deformable, easily processing and cutting, wafer luminous efficiency are high was used.
The to-be-solved technical problem of the utility model is to provide a dam base plate non-deformable, easily processing and cut, wafer packaging structure that luminous efficiency is high.
In order to solve the technical problem, the utility model adopts the technical scheme that the dam ceramic substrate for packaging the chip comprises a ceramic substrate and a dam made of the dam substrate, wherein the ceramic substrate comprises a ceramic plate and a metalized graphic layer arranged on the surface of the ceramic plate, and the dam is fixed on the top surface of the ceramic substrate; the box dam substrate adopts a copper-clad plate, and the copper-clad plate comprises a copper foil and a resin-containing substrate; the inner hole of the box dam is covered with a metal layer.
The box dam is fixed on the top surface of the ceramic plate, the top surface of the seed metal thin layer of the metallization pattern layer or the top surface of the copper thickness of the finished product of the metallization pattern layer through the bonding layer or the welding layer; when the box dam is fixed on the top surface of the ceramic substrate through the adhesive layer, the metal layer covered by the inner hole of the box dam extends downward and covers the inner circumference of the adhesive layer.
The copper-clad plate is a single-sided copper-clad plate or a double-sided copper-clad plate, and when the copper-clad plate is the single-sided copper-clad plate, the copper foil of the copper-clad plate is arranged at the top of the box dam.
In the box dam ceramic substrate, the inner hole of the box dam is a stepped hole, the box dam substrate comprises a single double-sided copper-clad plate or two laminated single-sided copper-clad plates, and when the box dam substrate is two laminated single-sided copper-clad plates, the substrates of the two single-sided copper-clad plates are opposite and bonded; the small holes of the stepped holes are formed in the lower single-sided copper-clad plate, and the large holes of the stepped holes are formed in the upper single-sided copper-clad plate.
Above the ceramic substrate for the box dam, the top surface of the box dam is covered with a metal layer, or the top surface and the periphery of the box dam are covered with the metal layer.
A chip packaging structure comprises a glass cover plate, a three-dimensional ceramic substrate and a chip, wherein the three-dimensional ceramic substrate is the ceramic substrate of the enclosure dam, the chip is attached to a metallization pattern layer on the top surface of the ceramic substrate, and the glass cover plate is fixed to the top of the enclosure dam.
In the above wafer packaging structure, the outer edge of the bottom surface of the glass cover plate comprises the annular weldable metal layer, and the weldable metal layer on the bottom surface of the glass cover plate is welded with the top of the dam; the box dam is fixed on the top surface of the ceramic plate, the top surface of the seed metal thin layer of the metallization pattern layer or the top surface of the copper thickness of a finished product of the metallization pattern layer through an adhesive layer or a welding layer; when the box dam is fixed on the top surface of the ceramic substrate through the adhesive layer, the metal layer covered by the inner hole of the box dam extends downward and covers the inner circumference of the adhesive layer.
In the wafer packaging structure, the inner hole of the enclosure is a stepped hole with a large upper part and a small lower part, and the glass cover plate is embedded into the large hole of the stepped hole of the enclosure; the weldable metal layer on the bottom surface of the glass cover plate is welded with the metal layer on the step of the stepped hole.
In the above wafer packaging structure, the bottom surface of the glass cover plate is bonded with the top of the box dam.
In the wafer packaging structure, the inner hole of the enclosure is a stepped hole with a large upper part and a small lower part, and the glass cover plate is embedded into the large hole of the stepped hole of the enclosure; the bottom surface of the glass cover plate is bonded with the top surface of the step of the stepped hole.
The utility model utilizes the copper-clad plate as the base plate of the dam, the warp is not easy to deform in the processing process, the base plate of the dam is convenient to process and cut, and the cutter is not damaged; the metal layer on the inner wall of the dam hole can reflect light emitted by the wafer, and the light emitting efficiency of the wafer is high; the utility model discloses a dam ceramic substrate and wafer packaging structure can be used to the encapsulation of wafers such as ultraviolet LED, VCSEL diode and crystal oscillator.
[ description of the drawings ]
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a cross-sectional view of an ultraviolet LED according to embodiment 1 of the present invention.
Fig. 2 is a cross-sectional view of an ultraviolet LED of embodiment 2 of the present invention.
Fig. 3 is a cross-sectional view of an ultraviolet LED according to embodiment 3 of the present invention.
Fig. 4 is a cross-sectional view of an ultraviolet LED according to embodiment 4 of the present invention.
Fig. 5 is a cross-sectional view of an ultraviolet LED according to embodiment 5 of the present invention.
Fig. 6 is a cross-sectional view of an ultraviolet LED according to embodiment 6 of the present invention.
Fig. 7 is a cross-sectional view of an ultraviolet LED according to embodiment 7 of the present invention.
Fig. 8 is a cross-sectional view of an ultraviolet LED according to embodiment 8 of the present invention.
Fig. 9 is a cross-sectional view of an ultraviolet LED according to embodiment 9 of the present invention.
Fig. 10 is a cross-sectional view of an ultraviolet LED according to embodiment 10 of the present invention.
[ detailed description of the invention ]
The utility model provides an embodiment 1 ultraviolet LED's structure is shown in figure 1, including glass apron 10, box dam ceramic substrate (three-dimensional ceramic substrate) and ultraviolet LED chip 20. The dam ceramic substrate includes a ceramic substrate 30 and a dam 40 made of the dam substrate. The ceramic substrate 30 includes a ceramic board 31 and metallization pattern layers 32 disposed on upper and lower surfaces of the ceramic board 31, and the ultraviolet LED chips 20 are attached to electrodes 322 of the metallization pattern layers 32 on the upper surface of the ceramic board 31. The dam substrate is a double-sided copper clad laminate, and comprises an upper copper foil 42, a lower copper foil 43 and a resin-containing substrate 41, wherein the resin-containing substrate 41 can be a substrate which is impregnated with resin on the basis of a reinforcing material (such as glass fiber cloth), can also be a substrate of pure resin, or can be a substrate which contains a small amount of reinforcing material in resin. The resin of the substrate 41 may be BT resin, modified epoxy resin, or PI resin to withstand a processing temperature of 260 ℃ to 320 ℃. The dam 40 is secured to the top surface of the final copper thickness 321 of the metallization pattern layer 32 by an adhesive layer (or solder layer) 01. The inner hole of the dam 40 is covered with a metal layer 44 and the top surface is covered with a metal layer 45, and the lower end of the metal layer 44 covered with the inner hole of the dam 40 extends downward to the upper surface of the ceramic plate 31, covering the inner periphery of the adhesive layer 01 and the inner periphery of the finished copper thickness 321, to prevent the adhesive layer 01 from being deteriorated by light. The outer edge of the bottom surface of the glass cover plate 10 is provided with a ring-shaped weldable metal layer 11, and the weldable metal layer 11 on the bottom surface of the glass cover plate 10 is welded with the metal layer 45 on the top of the dam 40 through a welding layer 02.
The utility model discloses embodiment 1's box dam base plate also can adopt the single face copper-clad plate. When the copper-clad plate is a single-sided copper-clad plate, the copper foil of the copper-clad plate is arranged at the top of the box dam 40, and the substrate of the copper-clad plate is fixed on the top surface of the finished copper thickness 321 of the metallization pattern layer 32 through the bonding layer 01.
The embodiment of the utility model provides a 1 box dam ceramic substrate's preparation and the working process of ultraviolet LED encapsulation as follows:
101) processing a positioning hole on a double-sided copper-clad plate serving as a base plate of the box dam, and punching out a box dam inner hole (or drilling and cutting the box dam inner hole) by using a die;
102) conducting treatment, such as metallization treatment, on the inner hole of the dam substrate to coat a layer of metal on the inner wall of the hole;
103) the copper foil of the box dam substrate is etched out of the criss-cross cutting channels through coating of photosensitive materials, exposure, development and etching;
104) rivet fixing and positioning are carried out by using the plate edge positioning holes, and the whole dam substrate is bonded with the whole ceramic plate 31 by using an adhesive film (an adhesive layer 01); the adhesive film adopts conductive adhesive filled with metal particles, or the inner edge of the hole is subjected to conductive treatment so as to electroplate a metal layer:
105) the box dam 40 and the ceramic plate 31 are electroplated together in a whole piece, so that metal layers are electroplated on the inner wall and the top surface of the hole of the box dam 40, and the metal layers on the inner wall of the hole of the box dam can prevent the light absorption and aging of the inner wall of the hole of the box dam and reduce the luminous efficiency of the ultraviolet LED;
106) cutting the whole dam substrate by using a blade, dividing an independent dam 40 on the ceramic plate 31 of the whole plate, and finishing the dam ceramic substrate of the whole plate for packaging ultraviolet LEDs without damaging the ceramic plate 31 at the bottom by using the blade during cutting;
107) performing ultraviolet LED chip 20 soldering on the electrode 322 of the surface metallization pattern layer 32 on the ceramic board 31;
108) arranging a welding layer 02 (soldering tin layer) on the top surface of the box dam 40, and electroplating or screen-printing a weldable metal layer 11 (silver layer, gold layer or copper layer) on the contact position of the outer side of the bottom surface of the glass cover plate 10 and the box dam 40;
109) welding the glass cover plate 10 and the top of the box dam 40 through reflow soldering to finish the ultraviolet LED packaging of the whole plate;
1010) and carrying out single segmentation on the ultraviolet LEDs of the whole plate to obtain single ultraviolet LED products.
The embodiment 1 of the utility model uses the double-sided copper-clad plate as the base plate of the dam, the double-sided copper-clad plate is not easy to deform and warp in the processing process, the cutting channels crossed longitudinally and transversely of the copper foil of the base plate of the dam can be etched in advance, the processing and cutting are convenient, and the cutter is not damaged; the inner wall of the dam hole is electroplated with a metal layer, the metal layer can reflect ultraviolet light emitted by the ultraviolet LED, and the luminous efficiency of the ultraviolet LED is high.
The structure of the ultraviolet LED of embodiment 2 of the present invention is shown in fig. 2, and the difference between the structure of the ultraviolet LED of embodiment 2 and embodiment 1 is only that the box dam 40 of embodiment 2 is fixed on the top surface of the seed metal thin layer 323 of the metallization pattern layer 32 by the adhesive layer 01.
The structure of the ultraviolet LED of embodiment 3 of the present invention is shown in fig. 3, and the structure of the ultraviolet LED of embodiment 3 is different from that of embodiment 1 only in that the dam 40 of embodiment 3 is directly fixed on the top surface of the ceramic plate 31 by the adhesive layer 01.
The utility model discloses embodiment 4 ultraviolet LED's structure is shown in figure 4, and embodiment 4 ultraviolet LED's structure lies in with embodiment 1's difference, and the hole of box dam 40 is big-end-up's shoulder hole, and the box dam base plate adopts two range upon range of single face copper- clad plates 40A and 40B, and two single face copper- clad plates 40A and 40B's base plate are relative and bond together. The small holes of the stepped holes are formed in the lower single-sided copper-clad plate 40A, and the large holes of the stepped holes are formed in the upper single-sided copper-clad plate 40B. The glass cover plate 10 is inserted into the large hole of the stepped hole of the dam 40. The solderable metal layer 11 on the bottom surface of the glass cover plate 10 is soldered to the metal layer 46 on the step hole step by means of a solder layer 02.
When the stepped hole is a circular hole, the base plate of the box dam can also adopt a single double-sided copper-clad plate, and at the moment, the stepped inner hole of the box dam 40 is processed in a depth control drilling mode.
The embodiment of the utility model provides a 4 ultraviolet LED need cut into glass apron 10 in advance in step 109) for a short time, imbed respectively in the shoulder hole of box dam 40 and weld again.
The structure of the ultraviolet LED of embodiment 5 of the present invention is shown in fig. 5, and the difference between the structure of the ultraviolet LED of embodiment 5 and embodiment 4 is only that the box dam 40 of embodiment 5 is fixed on the top surface of the seed metal thin layer 323 of the metallization pattern layer 32 by the adhesive layer 01.
The structure of the ultraviolet LED of embodiment 6 of the present invention is as shown in fig. 6, and the structure of the ultraviolet LED of embodiment 6 is different from that of embodiment 4 only in that the dam 40 of embodiment 6 is directly fixed on the top surface of the ceramic plate 31 by the adhesive layer 01.
The structure of embodiment 7 ultraviolet LED is as shown in fig. 7, the difference between the structure of embodiment 7 ultraviolet LED and embodiment 1 is that the periphery of the box dam 40 is covered with the metal layer 47, the difference between the processing procedure and embodiment 1 is that the blade cutting is performed to the whole box dam substrate first, the independent box dam 40 is cut apart on the ceramic plate 31 of the whole plate, then the box dam 40 and the ceramic plate 31 are performed with the whole plate electroplating, so that the inner wall, the top surface and the periphery of the hole of the box dam 40 are respectively electroplated with the metal layer 44, the metal layer 45 and the metal layer 47.
The structure of embodiment 8 ultraviolet LED is as shown in fig. 8, the difference between the structure of embodiment 8 ultraviolet LED and embodiment 4 is that the periphery of the box dam 40 is covered with the metal layer 47, the difference between the processing procedure and embodiment 1 is that the blade cutting is performed to the whole box dam substrate first, the independent box dam 40 is cut apart on the ceramic plate 31 of the whole plate, then the box dam 40 and the ceramic plate 31 are performed with the whole plate electroplating, so that the inner wall, the top surface and the periphery of the hole of the box dam 40 are respectively electroplated with the metal layer 44, the metal layer 45 and the metal layer 47.
The utility model discloses example 9 ultraviolet LED's structure is as shown in FIG. 9, the difference of example 9 ultraviolet LED's structure and example 1 lies in, the outer edge of glass apron 10 bottom surface need not cover weldable metal layer 11, the direct top with box dam 40 of glass apron 10 bottom surface passes through adhesive linkage 03 bonding, rather than the welding, because there is interior edge unsealed adhesive linkage 03 at the top of box dam 40, so the metal level of the hole cover of box dam 40 can not extend down to the upper surface of ceramic plate 31, cover the inner periphery of adhesive linkage 01 and the inner periphery of the thick 321 of finished product copper.
The utility model discloses embodiment 10 ultraviolet LED's structure is as shown in FIG. 10, embodiment 10 ultraviolet LED's structure and embodiment 4's difference lie in, glass apron 10 bottom surface need not cover weldable metal layer 11 layer, glass apron 10 bottom surface is direct to pass through adhesive linkage 03 with the metal layer on the box dam 40 shoulder step and bonds, rather than the welding, because there is interior unclosed adhesive linkage 03 of edge at the top of box dam 40, so the metal layer of box dam 40's hole cover can not downwardly extending to the upper surface of ceramic plate 31, cover the inner periphery of adhesive linkage 01 and the inner periphery of finished product copper thickness 321.
The above embodiment of the utility model carries out the whole piece processing to the box dam in advance; the whole piece is pasted on the ceramic plate, and the whole piece is fixed and aligned by utilizing the positioning hole, so that the precision is high; and the dam is cut by the blade in a whole process, so that the dam is processed in a whole-piece mode, the production efficiency is high, and the labor cost is low.
The copper-clad plate is used as the base plate of the box dam in the above embodiment of the utility model, the copper-clad plate is not easy to deform and warp in the processing process, the cutting channels crossed longitudinally and transversely of the copper foil of the base plate of the box dam can be etched in advance, the processing and the cutting are convenient, and the cutter is not damaged; the inner wall of the dam hole is electroplated with a metal layer, the metal layer can reflect ultraviolet light emitted by the ultraviolet LED, and the luminous efficiency of the ultraviolet LED is high.
The utility model discloses a dam ceramic substrate and wafer packaging structure can be used to the encapsulation of wafers such as ultraviolet LED, VCSEL (vertical cavity surface emitting laser) diode and crystal oscillator.
Claims (10)
1. A ceramic substrate of a dam for chip packaging comprises a ceramic substrate and a dam made of the ceramic substrate, wherein the ceramic substrate comprises a ceramic plate and a metallization pattern layer arranged on the surface of the ceramic plate, and the dam is fixed on the top surface of the ceramic substrate; the dam is characterized in that the dam substrate adopts a copper-clad plate, and the copper-clad plate comprises a copper foil and a resin-containing substrate; the inner hole of the box dam is covered with a metal layer.
2. The ceramic substrate for a dam according to claim 1, wherein the dam is fixed on the top surface of the ceramic plate, the top surface of the seed metal thin layer of the metallization pattern layer or the top surface of the finished copper thick layer of the metallization pattern layer by an adhesive layer or a welding layer; when the box dam is fixed on the top surface of the ceramic substrate through the adhesive layer, the metal layer covered by the inner hole of the box dam extends downward and covers the inner circumference of the adhesive layer.
3. The box dam ceramic substrate according to claim 1, wherein the copper-clad plate is a single-sided copper-clad plate or a double-sided copper-clad plate, and when the copper-clad plate is the single-sided copper-clad plate, the copper foil of the copper-clad plate is arranged on the top of the box dam.
4. The box dam ceramic substrate according to claim 1, wherein the inner hole of the box dam is a stepped hole, the box dam substrate comprises a single double-sided copper-clad plate or two laminated single-sided copper-clad plates, and when the box dam substrate is the two laminated single-sided copper-clad plates, the substrates of the two single-sided copper-clad plates are opposite and bonded; the small holes of the stepped holes are formed in the lower single-sided copper-clad plate, and the large holes of the stepped holes are formed in the upper single-sided copper-clad plate.
5. The dam ceramic substrate according to claim 1, wherein the top surface of the dam is covered with a metal layer, or the top surface and the outer periphery of the dam are covered with a metal layer.
6. A chip packaging structure comprises a glass cover plate, a three-dimensional ceramic substrate and a chip, wherein the three-dimensional ceramic substrate is the ceramic substrate of the box dam of claim 1, the chip is attached to a metallization pattern layer on the top surface of the ceramic substrate, and the glass cover plate is fixed on the top of the box dam.
7. The wafer package structure of claim 6, wherein the outer edge of the bottom surface of the glass cover plate comprises an annular solderable metal layer, the solderable metal layer of the bottom surface of the glass cover plate being soldered to the top of the dam; the box dam is fixed on the top surface of the ceramic plate, the top surface of the seed metal thin layer of the metallization pattern layer or the top surface of the copper thickness of a finished product of the metallization pattern layer through an adhesive layer or a welding layer; when the box dam is fixed on the top surface of the ceramic substrate through the adhesive layer, the metal layer covered by the inner hole of the box dam extends downward and covers the inner circumference of the adhesive layer.
8. The wafer packaging structure of claim 7, wherein the inner hole of the dam is a stepped hole with a large top and a small bottom, and the glass cover plate is embedded into the large hole of the stepped hole of the dam; the weldable metal layer on the bottom surface of the glass cover plate is welded with the metal layer on the step of the stepped hole.
9. The chip package structure of claim 6, wherein the bottom surface of the glass cover plate is bonded to the top of the dam.
10. The wafer packaging structure of claim 9, wherein the inner hole of the dam is a stepped hole with a large top and a small bottom, and the glass cover plate is embedded into the large hole of the stepped hole of the dam; the bottom surface of the glass cover plate is bonded with the top surface of the step of the stepped hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2020204875075 | 2020-04-04 | ||
| CN202020487507 | 2020-04-04 |
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| CN211654858U true CN211654858U (en) | 2020-10-09 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112967935A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN112968004A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN112967937A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN113013041A (en) * | 2021-02-09 | 2021-06-22 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
-
2020
- 2020-04-15 CN CN202020560920.XU patent/CN211654858U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112967935A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN112968004A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN112967937A (en) * | 2021-02-09 | 2021-06-15 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
| CN113013041A (en) * | 2021-02-09 | 2021-06-22 | 池州昀冢电子科技有限公司 | Packaging structure and preparation method thereof |
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Address after: 518125 No.9, Xinfa 2nd Road, Xinqiao community, Xinqiao street, Bao'an District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Dinghua Xintai Technology Co.,Ltd. Address before: No. 9, Xinfa 2nd Road, Xinqiao community, Xinqiao street, Bao'an District, Shenzhen City, Guangdong Province Patentee before: ACCELERATED PRINTED CIRCUIT BOARD Co.,Ltd. |
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