CN117334795B - Preparation and application of high-power LED packaging structure based on ceramic surrounding dam - Google Patents
Preparation and application of high-power LED packaging structure based on ceramic surrounding dam Download PDFInfo
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- CN117334795B CN117334795B CN202311276320.5A CN202311276320A CN117334795B CN 117334795 B CN117334795 B CN 117334795B CN 202311276320 A CN202311276320 A CN 202311276320A CN 117334795 B CN117334795 B CN 117334795B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 118
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052802 copper Inorganic materials 0.000 claims abstract description 71
- 239000010949 copper Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 39
- 229910000679 solder Inorganic materials 0.000 claims abstract description 28
- 238000005245 sintering Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 24
- 238000005520 cutting process Methods 0.000 claims abstract description 23
- 238000005476 soldering Methods 0.000 claims abstract description 16
- 238000003466 welding Methods 0.000 claims abstract description 16
- 238000005219 brazing Methods 0.000 claims abstract description 9
- 239000003822 epoxy resin Substances 0.000 claims abstract description 5
- 238000007731 hot pressing Methods 0.000 claims abstract description 5
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000004381 surface treatment Methods 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 238000005238 degreasing Methods 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000007650 screen-printing Methods 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- 238000011161 development Methods 0.000 claims description 4
- 238000003698 laser cutting Methods 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- 229910052573 porcelain Inorganic materials 0.000 claims description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 claims description 2
- 239000005708 Sodium hypochlorite Substances 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000008139 complexing agent Substances 0.000 claims description 2
- 229910001431 copper ion Inorganic materials 0.000 claims description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 2
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011449 brick Substances 0.000 description 1
- 239000010431 corundum Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to the field of LED high-power packaging, in particular to preparation and application of a high-power LED packaging structure based on a ceramic box dam. The invention cuts the uppermost ceramic chip through laser, cuts out an array through hole, and coats solder or soldering lug on the lower surface of the uppermost ceramic chip or the upper and lower surfaces of the non-uppermost ceramic chip; arranging the ceramic chip and the copper sheet from top to bottom according to the sequence of the ceramic chip through hole layer, the copper layer, the ceramic chip layer and the copper layer to obtain a piece to be sintered; performing vacuum active brazing sintering by adopting an AMB process, and performing wire cutting treatment to obtain a ceramic box dam copper-clad substrate; and attaching a soldering lug and a chip in the substrate, performing hot-pressing sintering, pouring epoxy resin, curing, and finally welding wires at two ends of the next copper sheet, switching on a power supply, and enabling the LED chip to emit light. Through the preparation steps, the performance and the reliability of the LED packaging structure can be improved.
Description
The invention relates to the field of LED high-power packaging, in particular to preparation and application of a high-power LED packaging structure based on a ceramic box dam.
Background
As power devices have increased in demand for power output, thermal conduction has become critical. In the high-power LED light emitting device used in daily life, the copper-clad ceramic substrate is particularly important as a heat dissipation core of the power device.
However, when welding is performed using a conventional welding method, a cold joint is often generated, and the structural process of welding the weirs is also complicated. The prior art has at least the following problems:
1. the welding effect is not good: the welding effect between the substrate and the high-power chip is poor, and the conditions of cold joint, falling off and the like are easy to occur;
2. multiple processes: the traditional welding method needs a plurality of working procedures to manufacture the dam required by the substrate, so that the production efficiency is lower;
3. the complex process comprises the following steps: conventional copper-clad ceramic substrates typically require plating of metal dams on the substrate to achieve heat dissipation, a process that is relatively complex.
Therefore, we propose a preparation and application of a high-power LED packaging structure based on a ceramic dam.
Disclosure of Invention
The invention aims to provide preparation and application of a high-power LED packaging structure based on a ceramic box dam, so as to solve the problems in the background art.
In order to solve the technical problems, the invention provides the following technical scheme:
the preparation of the high-power LED packaging structure based on the ceramic surrounding dam comprises the following steps:
step S1: cutting the ceramic chip into an array through hole by using a laser cutting technology to obtain a through hole ceramic chip, and cutting the lengths of the two ends of the through hole ceramic chip to be 3-10 mm smaller than the length of the copper sheet to obtain the uppermost ceramic chip;
step S2: respectively coating solder on the upper surface and the lower surface of the ceramic plate by adopting a screen printing process to form a solder layer, respectively placing a copper sheet on the surface of the solder layer to form a metal layer, and preparing a piece to be sintered;
step S3: respectively placing pressure heads on the upper surface and the lower surface of a piece to be sintered, and performing vacuum active brazing sintering by adopting an AMB (brazing) sintering process, wherein the sintering temperature is 600-950 ℃ and the sintering time is 60-480 min, so as to obtain a sintered piece; sequentially performing steps of film pasting, exposure, development, copper etching and solder etching on a sintered piece according to the production and processing flow of the AMB copper-clad plate, and forming a strip-shaped groove on the surface of the copper sheet to prepare the copper sheet with the strip-shaped groove etched on the surface;
step S4: respectively carrying out surface degreasing on the copper sheet with the strip-shaped grooves etched on the surface obtained in the step S3 and the uppermost ceramic chip obtained in the step S1, respectively carrying out surface cleaning, aligning the center of the through hole of the uppermost ceramic chip with the center of the strip-shaped groove of the copper sheet, and carrying out sintering to obtain the ceramic copper-clad substrate; after the ceramic copper-clad substrate is cooled to room temperature, a metal tungsten wire is used, the ceramic copper-clad substrate is parallel to the upper surface of the uppermost ceramic chip, and is aligned to the center of the through hole for longitudinal cutting, and the cutting is ended until the position of the strip-shaped groove of the next copper sheet is reached, so that the ceramic dam copper-clad substrate is prepared;
step S5: and (3) carrying out surface treatment on the ceramic box dam copper-clad substrate by using cleaning liquid, firstly attaching silver soldering lugs at two ends of the strip-shaped groove of the ceramic box dam copper-clad substrate after the surface treatment, then attaching chips to ensure that the directions of the positive electrode and the negative electrode of the chips at the position of each box dam are consistent, then carrying out hot-pressing sintering for 5-30 min at 200-250 ℃, pouring epoxy resin at the position of a through hole for solidification, finally welding positive electrode wires and negative electrode wires at two ends of the copper sheet at the lowest layer, switching on a power supply, and enabling the LED chips to emit light.
Further, in the step S1, the ceramic chip is Al 2 O 3 、AlN、Si 3 N 4 The thickness of the material is 0.15-1 mm.
Further, the copper sheet in the step S1 is surface-treated metal copper without an oxide layer, and the thickness is 0.1-0.4 mm.
Further, the thickness of the solder layer in the step S2 is 5-15 μm.
Further, the preparation process of the piece to be sintered in the step S2 further includes the following cases:
case 1: respectively attaching active metal soldering lugs on the upper surface and the lower surface of the ceramic plate, and respectively placing a copper sheet on the surfaces of the metal soldering lugs to prepare a piece to be sintered;
case 2: coating screen printing solder on the lower surface of the uppermost ceramic chip to form a solder layer, placing a copper sheet on the lower surface of the solder layer, placing a ceramic plate on the lower surface of the copper sheet, and placing a copper sheet on the lower surface of the ceramic plate to obtain a piece to be sintered;
case 3: pasting an active metal soldering lug on the lower surface of the porcelain piece on the uppermost layer, placing a copper sheet on the lower surface of the metal soldering lug, placing a ceramic plate on the lower surface of the copper sheet, and placing a copper sheet on the lower surface of the ceramic plate to prepare a piece to be sintered;
case 4: coating solder on the lower surface of the uppermost ceramic chip to form a solder layer, placing a copper sheet on the lower surface of the solder layer, placing a ceramic plate with double-sided bonding pads on the lower surface of the copper sheet, and placing a copper sheet on the lower surface of the ceramic plate with double-sided bonding pads to obtain a piece to be sintered;
case 5: and (3) sticking a soldering lug on the lower surface of the uppermost ceramic chip, placing a copper sheet on the lower surface of the soldering lug, placing a double-sided soldering lug ceramic plate on the lower surface of the copper sheet, and placing a copper sheet on the lower surface of the double-sided soldering lug ceramic plate to obtain the piece to be sintered.
Further, the pressure head in the step S3 is one of glass, ceramic, graphite block and corundum brick.
Further, the process conditions of copper etching in the step S3 are as follows: the mass concentration of copper ions is 2-3g/L, iminodiacetic acid with mass fraction of 1.5-2.0% is selected as copper complexing agent, the mass fraction of hydrogen peroxide is 15-20%, the temperature is 30-45 ℃ and the time is 5-25 min.
Further, the etching solution for solder etching in the step S3 includes: 300-500 g/L ferric chloride, 2-3g/L hydrochloric acid, 10-30 g/L sodium hypochlorite and 0.05-0.10 g/L benzotriazol, wherein the temperature is 30-45 ℃ and the time is 10-25 min.
Further, in the step S3, the width of the strip-shaped grooves is 0.1-1 mm, and the distance between the adjacent strip-shaped grooves is consistent with the center distance of the through holes cut by the porcelain piece at the uppermost layer.
Further, the solvent used in the surface degreasing process in the step S4 is one of ethanol, isopropanol and acetone.
Further, the cutting process in the step S4 uses a diamond wire cutting machine.
Further, the size of the silver soldering lug in the step S5 is determined according to the size of the anode and the cathode of the LED chip.
Further, the curing process conditions in the step S5 are as follows: the curing temperature is 80-150 ℃ and the curing time is 10-60 min.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention relates to a preparation and application of a high-power LED packaging structure based on a ceramic surrounding dam, which comprises the steps of preparing four layers of copper-clad ceramic substrates, wherein the uppermost ceramic chip is cut by laser to form an array through hole, the lower surface of the uppermost ceramic chip or the upper and lower surfaces of the non-uppermost ceramic chip are coated with solder or soldering lugs, and then the ceramic chip and the copper sheet are arranged from top to bottom according to the sequence from the ceramic chip through hole layer to the copper layer to the ceramic chip layer to the copper layer, so as to prepare a piece to be sintered; and placing pressure heads on the upper and lower parts of the piece to be sintered, and performing vacuum active brazing sintering by adopting an AMB process to firmly combine the ceramic chip and the copper sheet. Cutting the uppermost ceramic layer and the next copper layer by using a tungsten wire to obtain a ceramic box dam copper-clad substrate; through the preparation steps, the invention mainly solves the problems of poor heat dissipation, high cost, complex process, low efficiency and the like of a welding layer in the traditional welding method.
2. The preparation and application of the high-power LED packaging structure based on the ceramic surrounding dam provide a novel LED silver piece welding mode, effectively solve the problems of easy cold joint, falling off and the like in the traditional welding method, and improve the stability and reliability of the welding effect; the invention adopts the copper-clad substrate sintered ceramic box dam four-layer structure, simplifies the manufacturing process and improves the production efficiency; the invention provides a high-power radiating substrate directly-grouting structure, which simplifies the structure process and reduces the manufacturing cost; the invention provides a flip LED non-gold wire current transmission mode, which changes the way of transmitting current by gold wires in the traditional LED packaging structure and improves the current transmission efficiency and reliability.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a diagram of the uppermost ceramic tile of a ceramic copper clad substrate of the present invention;
FIG. 2 is a front view of a ceramic copper clad substrate to be sintered according to the present invention;
FIG. 3 is a left side view of a ceramic copper clad substrate of the present invention;
FIG. 4 is a schematic cross-sectional view of a ceramic dam copper-clad substrate of the present invention;
FIG. 5 is a perspective view of a copper-clad substrate of the ceramic dam of the present invention;
FIG. 6 is a block diagram of a copper-clad substrate of a ceramic dam of the present invention;
FIG. 7 is a diagram of the positive and negative electrode packaging structure (unwelded chip) of the copper-clad substrate of the ceramic dam of the present invention;
FIG. 8 is a diagram of a die bond package (bonded die) of a copper-clad substrate for a ceramic dam according to the present invention;
FIG. 9 is a top view of a ceramic dam copper-clad substrate die attach package (attached die) of the present invention;
in the figure: 101: uppermost tile, 102: ceramic plate, 103: copper sheet, 104: strip groove, 301: positive electrode, 302: negative electrode, 303: and a chip.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1: the preparation of the high-power LED packaging structure based on the ceramic surrounding dam comprises the following steps:
step S1: cutting the ceramic chip into an array through hole by using a laser cutting technology to obtain a through hole ceramic chip, and cutting the lengths of the two ends of the through hole ceramic chip to be 3mm smaller than the length of the copper sheet to obtain an uppermost ceramic chip 101;
step S2: the upper surface and the lower surface of the ceramic plate 102 are respectively coated with solder by adopting a screen printing process to form a solder layer, and a copper sheet 103 is respectively placed on the surface of the solder layer to form a metal layer, so that a piece to be sintered is prepared;
step S3: respectively placing pressure heads on the upper surface and the lower surface of a piece to be sintered, and performing vacuum active brazing sintering by adopting an AMB sintering process, wherein the sintering temperature is 600 ℃, and the sintering time is 60 minutes, so as to obtain a sintered piece; sequentially performing steps of film pasting, exposure, development, copper etching and solder etching on a sintered piece according to the production and processing flow of the AMB copper-clad plate, and forming a strip-shaped groove on the surface of the copper sheet 103 to obtain the copper sheet 103 with the strip-shaped groove 104 etched on the surface;
step S4: respectively carrying out surface degreasing on the copper sheet 103 with the strip-shaped grooves 104 etched on the surface obtained in the step S3 and the uppermost-layer ceramic chip 101 obtained in the step S1, respectively carrying out surface cleaning, aligning the center of a through hole of the uppermost-layer ceramic chip 101 with the center of the strip-shaped grooves 104 of the copper sheet 103, and carrying out sintering to obtain a ceramic copper-clad substrate; after the substrate is cooled to room temperature, performing linear cutting treatment, using a metal tungsten wire with the thickness of 0.5mm, enabling the metal tungsten wire to be parallel to the upper surface of the uppermost ceramic chip 101, and performing longitudinal cutting aiming at the center of the through hole until reaching the groove position of the next copper sheet 103, and finishing cutting to obtain the ceramic box dam copper-clad substrate;
step S5: and (3) carrying out surface treatment on the ceramic box dam copper-clad substrate by using cleaning liquid, firstly attaching silver soldering lugs at two ends of the strip-shaped groove 104 of the ceramic box dam copper-clad substrate with the surface treated, then attaching chips 303 to ensure that the directions of the positive electrode and the negative electrode of the chips at the position of each box dam are consistent, then carrying out hot-pressing sintering at 200 ℃ for 5min, pouring epoxy resin at the position of a through hole for curing (curing temperature is 80 ℃ and curing time is 60 min), and finally welding a positive electrode 301 lead and a negative electrode 302 lead at two ends of the copper sheet 103 at the lowest layer, and switching on a power supply to enable the LED chips to emit light.
Example 2: the preparation of the high-power LED packaging structure based on the ceramic surrounding dam comprises the following steps:
step S1: cutting the ceramic chip into array through holes according to the size of 10mm in diameter by using a laser cutting technology to obtain through hole ceramic chips, and cutting the lengths of the two ends of the through hole ceramic chips to be 1mm smaller than the length of the copper sheet to obtain the uppermost ceramic chip 101;
step S2: the upper surface and the lower surface of the ceramic plate 102 are respectively coated with solder by adopting a screen printing process to form a solder layer, and a copper sheet 103 is respectively placed on the surface of the solder layer to form a metal layer, so that a piece to be sintered is prepared;
step S3: respectively placing pressure heads on the upper surface and the lower surface of a piece to be sintered, and performing vacuum active brazing sintering by adopting an AMB sintering process, wherein the sintering temperature is 950 ℃, and the sintering time is 480 minutes, so as to obtain a sintered piece; sequentially performing steps of film pasting, exposure, development, copper etching and solder etching on a sintered piece according to the production and processing flow of the AMB copper-clad plate, and forming a strip-shaped groove 104 on the surface of the copper sheet 103 to obtain the copper sheet 103 with the strip-shaped groove 104 etched on the surface;
step S4: respectively carrying out surface degreasing on the copper sheet 103 with the strip-shaped grooves 104 etched on the surface obtained in the step S3 and the uppermost-layer ceramic chip 101 obtained in the step S1, respectively carrying out surface cleaning, aligning the center of a through hole of the uppermost-layer ceramic chip 101 with the center of the strip-shaped grooves 104 of the copper sheet 103, and carrying out sintering to obtain a substrate; after the substrate is cooled to room temperature, performing linear cutting treatment, using a metal tungsten wire with the thickness of 1mm, enabling the metal tungsten wire to be parallel to the upper surface of the uppermost ceramic chip 101, and performing longitudinal cutting aiming at the center of the through hole until the position of the groove of the next copper sheet 103 is reached, and finishing cutting to obtain the ceramic surrounding dam copper-clad substrate;
step S5: and (3) carrying out surface treatment on the ceramic box dam copper-clad substrate by using cleaning liquid, firstly attaching silver soldering lugs at two ends of the strip-shaped groove 104 in the ceramic box dam copper-clad substrate after the surface treatment, then attaching the chip 303 to ensure that the directions of the positive electrode and the negative electrode of the chip at each box dam position are consistent, then carrying out hot-pressing sintering for 30min at 250 ℃, pouring epoxy resin at the position of the through hole for curing (curing temperature is 150 ℃ for 10 min), and finally welding a positive electrode 301 lead wire and a negative electrode 302 lead wire at two ends of the lowest copper sheet 103, switching on a power supply and enabling the LED chip to emit light.
Experiment
| Example 1 | Example 2 | |
| LED continuously emits light for 7 days with brightness change | No obvious change | No obvious change |
| Substrate operating temperature | 30℃ | 30℃ |
| Bare chip no-substrate operating temperature | 40℃ | 40℃ |
| Cost comparison of ceramic and metal weirs | Lowering | Lowering |
| Compared with the traditional surrounding dam, the technology difficulty | Simple | Simple |
From the data in the above table, the following conclusions can be clearly drawn:
after continuous operation, the performance of the LED chips is not obviously degraded, and the copper-clad ceramic substrate can conduct heat in time for a plurality of high-power LED chips which are more than 1W and work simultaneously without affecting the working state of the chips.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process method article or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process method article or apparatus.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The preparation of high-power LED packaging structure based on ceramic box dam, its characterized in that: the method comprises the following steps:
step S1: cutting the ceramic chip into an array through hole by using a laser cutting technology to obtain a through hole ceramic chip, and cutting the lengths of the two ends of the through hole ceramic chip to be 3-10 mm smaller than the length of the copper sheet to obtain an uppermost ceramic chip (101);
step S2: the upper surface and the lower surface of the ceramic plate (102) are respectively coated with solder by adopting a screen printing process to form a solder layer, and a copper sheet (103) is respectively placed on the surface of the solder layer to form a metal layer, so that a piece to be sintered is prepared;
step S3: respectively placing pressure heads on the upper surface and the lower surface of a piece to be sintered, and performing vacuum active brazing sintering by adopting a brazing sintering process, wherein the sintering temperature is 600-950 ℃ and the sintering time is 60-480 min to prepare a sintered piece; sequentially performing the steps of film pasting, exposure, development, copper etching and solder etching on a sintered piece according to the production and processing flow of the brazing copper-clad plate, and forming a strip-shaped groove (104) on the surface of the copper sheet (103) to obtain the copper sheet (103) with the strip-shaped groove (104) etched on the surface;
step S4: respectively carrying out surface degreasing on the copper sheet (103) with the strip-shaped groove (104) etched on the surface prepared in the step S3 and the uppermost ceramic chip (101) prepared in the step S1, respectively carrying out surface cleaning, aligning the center of the through hole of the uppermost ceramic chip with the center of the strip-shaped groove (104) of the copper sheet (103), and carrying out sintering to prepare the ceramic copper-clad substrate; after the ceramic copper-clad substrate is cooled to room temperature, performing wire cutting treatment, using a metal tungsten wire to enable the metal tungsten wire to be parallel to the upper surface of the uppermost ceramic chip (101), and performing longitudinal cutting aiming at the center of the through hole until the metal tungsten wire reaches the position of a strip-shaped groove (104) of the next copper sheet (103), ending cutting, and obtaining the ceramic surrounding dam copper-clad substrate;
step S5: and (3) carrying out surface treatment on the ceramic box dam copper-clad substrate by using cleaning liquid, firstly attaching silver soldering lugs at two ends of the strip-shaped groove (104) of the ceramic box dam copper-clad substrate with the surface treatment, then attaching chips (303) to ensure that the directions of the positive electrode and the negative electrode of the chips at the position of each box dam are consistent, hot-pressing and sintering at 200-250 ℃ for 5-30 min, pouring epoxy resin at the position of a through hole for curing, and finally welding a positive electrode (301) lead and a negative electrode (302) lead at two ends of the copper sheet (103) at the lowest layer, switching on a power supply and enabling the LED chips to emit light.
2. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the ceramic chip in the step S1 is Al 2 O 3 、AlN、Si 3 N 4 The thickness of the copper sheet is 0.15-1 mm, the copper sheet is surface-treated metal copper without an oxide layer, and the thickness is 0.1-0.4 mm.
3. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the thickness of the solder layer in the step S2 is 5-15 mu m.
4. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the process conditions of copper etching in the step S3 are as follows: the mass concentration of copper ions is 2-3g/L, iminodiacetic acid with the mass fraction of 1.5-2.0% is selected as the copper complexing agent, the mass fraction of hydrogen peroxide is 15-20%, the temperature is 30-45 ℃, and the time is 5-25 min.
5. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the etching solution for etching the solder in the step S3 includes: 300-500 g/L ferric chloride, 2-3g/L hydrochloric acid, 10-30 g/L sodium hypochlorite and 0.05-0.10 g/L benzotriazol, wherein the temperature is 30-45 ℃ and the time is 10-25 min.
6. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the width of the strip-shaped grooves in the step S3 is 0.1-1 mm, and the distance between the adjacent strip-shaped grooves is consistent with the center distance of the through holes cut by the porcelain piece at the uppermost layer.
7. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the solvent used in the surface oil removal process in the step S4 is one of ethanol, isopropanol and acetone.
8. The method for manufacturing the high-power LED packaging structure based on the ceramic box dam, according to claim 1, is characterized in that: the curing process conditions in the step S5 are as follows: the curing temperature is 80-150 ℃ and the curing time is 5-60 min.
9. The high-power LED packaging structure based on the ceramic box dam, which is prepared according to any one of claims 1-8.
10. An LED light emitting device prepared according to the high power LED package structure of claim 9.
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