CN105322073B - Novel no routing LED filament manufacturing technology - Google Patents
Novel no routing LED filament manufacturing technology Download PDFInfo
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- CN105322073B CN105322073B CN201410399611.8A CN201410399611A CN105322073B CN 105322073 B CN105322073 B CN 105322073B CN 201410399611 A CN201410399611 A CN 201410399611A CN 105322073 B CN105322073 B CN 105322073B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000005516 engineering process Methods 0.000 title abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000741 silica gel Substances 0.000 claims abstract description 9
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 9
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 26
- 238000004806 packaging method and process Methods 0.000 claims description 15
- 238000012545 processing Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 8
- 238000000018 DNA microarray Methods 0.000 claims description 7
- 239000012528 membrane Substances 0.000 claims description 7
- 239000002390 adhesive tape Substances 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000000499 gel Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000001771 vacuum deposition Methods 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 241001062009 Indigofera Species 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000010426 asphalt Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 19
- 238000000576 coating method Methods 0.000 abstract description 7
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000001465 metallisation Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 230000005619 thermoelectricity Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 150000002118 epoxides Chemical class 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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Abstract
The present invention be it is a kind of carrying out LED illumination lamp wire production method using coating technique, using un-encapsulated LED bare chips, this technical method does not need die bond, routing device and the related process technique of conventional package.The manufacturing technology includes mainly LED chip filament silica gel coat forming preparation method, and LED chip electrode metallizations connect technology of preparing, fluorescent powder coating method, thermoelectricity method for separating and preparing, LED chip heat dissipating method.Unencapsulated LED chip can be manufactured directly to bulb lamp light-emitting filament, downlight illuminating module, fluorescent lamp lamp bar etc. by the present invention by technology made above, reduced product cost, promoted product reliability and performance.
Description
Technical field：
The present invention relates to a kind of plated film LED illumination filament manufacturing technologies and method especially plated film (thermal evaporation, sputtering) electricity
The manufacturing technology and method of pole technology of preparing LED lamp silk module.
Background technology：
From the point of view of LED illumination product processing procedure, it is divided into the manufacturing processes such as Level0 to Level5, wherein Level0 is epitaxy
With the processing procedure of chip, Level1 encapsulates LED chip, and Level2 is then that LED is welded on PCB, and Level3 is LED module,
Level4 is lighting source, and Level5 is then lighting system.LED factories are without encapsulation chip technology mostly towards omission Level1 development.
From the point of view of Led illuminating product technological development direction, mainly to promoted 1m/w (lumens/watt) and reduction 1m/ $ (lumen/
Dollar) both direction effort.
The LED chip of all colors such as purple, blue, green of the slave 200nm-575nm wave bands made using Sapphire Substrate,
It is the faces P not remove its light-emitting surface in the case of Sapphire Substrate, Sapphire Substrate one side by packaging technology be welded on holder or
On heat-conducting substrate.In the material structure of entire LED chip, LED epitaxy layer thickness be usually no more than 20 microns (from buffer layer to
P GaN layers), and the thickness of Sapphire Substrate is generally 85-150 microns, and Sapphire Substrate is insulation and thermal insulation body, 25.12w/
M/k@100c, the heat that the chip and packing forms of this structure cause the luminous zones LED to generate cannot be transmitted to outside well
Portion causes LED chip operating temperature and junction temperature excessively high, influences life of product and performance, while also limiting carrying for driving current
It rises, can not significantly reduce 1m/ $.
Since LED chip size is smaller, the size of general 0.1w low-power LEDs chip in 5mil*17mil hereinafter,
The size of 0.2w power chips is between 10mil*16mil-10mil*30mil, and 0.5w chip sizes are about in 20mil*38mil
Between, the size of 1w chips is about in 45mil*45mil or so, since chip size is too small and optics light extraction and mechanical structure
The problems such as stability, can not be fabricated to standard type surface-mounted device.
To improve the heat dissipation performance of LED chip, realizes large driven current density, reduce 1m/ $, set using flip-chip in industry
Meter, but the defect of the product design existence foundation due to flip LED chips cause this technology to be produced in LED chip processing procedure
Yield is very low, and manufactured LED chip encapsulation process difficulty and processing cost are relatively high.
Invention content：
The present invention devises a kind of manufacturing technology and method using coating technique LED illumination filament module.What it was solved
Technical problem is that existing formal dress structure LED chip and flip LED chips are insurmountable suitable for large driven current density, heat dissipation performance
Promotion, the optimization of chip light emitting improved efficiency, current spread uniformity promote chip process rate, omit LED chip encapsulation
1 processing links of Level, the transformation efficiency for promoting fluorescent powder, the cost of manufacture that LED finished product lamp beads are greatly reduced.
The present invention uses following technical matters and method in order to solve the above problem：
Blue membrane DNA chip after cutting, splitting (or after sorting) is expanded, the blue membrane DNA chip after expansion is passed through into pour mask
It is placed on glass, metal or ceramic substrate (electrode surface of chip is bonded on substrate), silica gel or epoxy resin is uniform
Coated in being placed on the substrate of LED chip, by the gap filling gel or resin formation photograph between all LED chips on substrate
The physical arrangement support and LED chip encapsulation and secondary optics processing of bright lamp silk；
After the silica gel or curable epoxide that are applied on substrate, the packaging body for being packaged with LED chip is removed from substrate, it will be every
It is pasted between the P of chips, N electrode and blocks adhesive tape, the chip electrode face of packaging body is subjected to vacuum coating (sputter coating or heat
The modes such as evaporation coating, film thickness accomplish 0.2-0.5mm, the use of material are AL, Cu or Ag etc.)；
Adhesive tape of blocking on each chip for the packaging body that plated film is completed is torn, is formed exhausted between the P of chip, N electrode
Marginal zone；
Spray insulation Heat Conduction Material (ceramic material etc.) on packaging body after the completion of plated film forms thermal insulation layer；
Layer of fluorescent powder is applied in the electrode contralateral surface of packaging body.
By the LED filament of two appeal processing and fabricatings in insulation spray-coating surface bonding, 360 degree of luminous single headlamps are formed
Silk.
Description of the drawings：
Fig. 1 is the modular construction explanation that product is made of this technology, wherein upper figure is filament module (vertical view), figure below
For filament module (side view).
①：Silica gel or epoxy colloid
②：LED chip
③：Insulating heat-conductive substrate
④：Metal conducting layer
Using material, 1. 2. LED chip is packaged by material for silica gel or epoxy resin colloid, will 1. be encapsulated using material
4. the 2. LED chip completed plates metal conductive film, finally on metal conductive film 3. coating completes insulating heat-conductive substrate
Specific implementation mode：
Specific implementation mode is described in detail in conjunction with Fig. 1.
A kind of manufacturing technology and method of LED illumination filament module.
Blue membrane DNA chip after cutting, splitting (or after sorting) is expanded, the blue membrane DNA chip after expansion is passed through into pour mask
It is placed on glass, metal or ceramic substrate (electrode surface of chip is bonded on substrate), silica gel or epoxy resin is uniform
Coated in being placed on the substrate of LED chip, by the gap filling gel or resin formation photograph between all LED chips on substrate
The physical arrangement support and LED chip encapsulation and secondary optics processing of bright lamp silk；
After the silica gel or curable epoxide that are applied on substrate, the packaging body for being packaged with LED chip is removed from substrate, it will be every
It is pasted between the P of chips, N electrode and blocks adhesive tape, the chip electrode face of packaging body is subjected to vacuum coating (sputter coating or heat
The modes such as evaporation coating, film thickness accomplish 0.2-0.5mm, the use of material are AL, Cu or Ag etc.)；
Adhesive tape of blocking on each chip for the packaging body that plated film is completed is torn, is formed exhausted between the P of chip, N electrode
Marginal zone；
Spray insulation heat conduction (ceramics etc.) material on packaging body after the completion of plated film forms insulation (ceramics) heat-conducting layer；
Layer of fluorescent powder is applied in the electrode contralateral surface of packaging body.
The LED filament of two appeal processing and fabricatings is bonded in insulating heat-conductive (ceramics spray) coating surface, what 360 degree of formation shone
Single lighting filament.
Present invention realization is not limited by above-mentioned realization method, as long as using methodology and the technical side of the present invention
The various improvement or the not improved various improvement for carrying out the design of the present invention and technical solution that case carries out, or not improved general
The solution of the present invention and design directly apply to other occasions, are within the scope of the invention.
Claims (1)
1. plated film LED illumination lamp wire production method, which is characterized in that include the following steps：
1.1, the blue membrane DNA chip after cutting, splitting or sorting is expanded, the blue membrane DNA chip after expansion is placed by pour mask
Onto glass, metal or ceramic substrate, wherein the electrode surface of the indigo plant membrane DNA chip is bonded on substrate, by silica gel or asphalt mixtures modified by epoxy resin
Fat is uniformly coated in being placed on the substrate of LED chip, by the gap filling gel or ring between all LED chips on substrate
Oxygen resin forms the physical arrangement support of lighting filament and LED chip encapsulates and secondary optics processing；
1.2, after the silica gel or epoxy resin cure that are applied on substrate, the packaging body for being packaged with LED chip is removed from substrate,
Adhesive tape is blocked by being pasted between the P of every chips, N electrode, the chip electrode face of packaging body is passed through into sputter coating or thermal evaporation
Plated film mode carries out vacuum coating, wherein the material of film thickness 0.2-0.5mm, plated film are Al, Cu or Ag；
1.3, the adhesive tape of blocking on each chip for the packaging body that plated film is completed is torn, is formed exhausted between the P of chip, N electrode
Marginal zone；
1.4, spraying ceramic materials on packaging body after the completion of plated film form ceramic layer；
1.5, layer of fluorescent powder is applied in the electrode contralateral surface of packaging body；
1.6, the LED filament of two above-mentioned processing and fabricatings is bonded in ceramic spraying face, forms 360 degree of luminous single headlamps
Silk.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410399611.8A CN105322073B (en) | 2014-08-11 | 2014-08-11 | Novel no routing LED filament manufacturing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410399611.8A CN105322073B (en) | 2014-08-11 | 2014-08-11 | Novel no routing LED filament manufacturing technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105322073A CN105322073A (en) | 2016-02-10 |
| CN105322073B true CN105322073B (en) | 2018-08-07 |
Family
ID=55249068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410399611.8A Active CN105322073B (en) | 2014-08-11 | 2014-08-11 | Novel no routing LED filament manufacturing technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105322073B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI744108B (en) * | 2020-11-24 | 2021-10-21 | 勤倫有限公司 | Silk made by cutting film material and refined to improve physical properties and its production method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840986A (en) * | 2009-03-18 | 2010-09-22 | 株式会社东芝 | Light emitting semiconductor device and manufacture method thereof |
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN103354266A (en) * | 2013-07-11 | 2013-10-16 | 江阴长电先进封装有限公司 | Thin type wafer lever LED (Light-Emitting Diode) packaging structure and method |
| CN103855278A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | LED packaging structure and illumination equipment |
-
2014
- 2014-08-11 CN CN201410399611.8A patent/CN105322073B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840986A (en) * | 2009-03-18 | 2010-09-22 | 株式会社东芝 | Light emitting semiconductor device and manufacture method thereof |
| CN101958389A (en) * | 2010-07-30 | 2011-01-26 | 晶科电子（广州）有限公司 | LED surface mounting structure for silicon substrate integrated with functional circuits and packaging method thereof |
| CN103354266A (en) * | 2013-07-11 | 2013-10-16 | 江阴长电先进封装有限公司 | Thin type wafer lever LED (Light-Emitting Diode) packaging structure and method |
| CN103855278A (en) * | 2014-01-26 | 2014-06-11 | 上海瑞丰光电子有限公司 | LED packaging structure and illumination equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105322073A (en) | 2016-02-10 |
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Inventor after: Xu Haipeng Inventor after: Tian Qin Inventor after: Lei Junyong Inventor after: Huang Jianbo Inventor after: He Fang Inventor after: Rong Chao Inventor after: Liu Qiuting Inventor after: Xu Bo Inventor before: Li Tuo |
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Effective date of registration: 20171124 Address after: 518000, 2, 3 and 5 buildings, E new low carbon technology park, Shenzhen Wood Street, Pinghu District, Longgang District, Guangdong, China Applicant after: SHENZHEN KN-LIGHT ELECTRONIC TECHNOLOGY CO.,LTD. Address before: 116023 room 1403, seat A, No. 32, Torch Road, Dalian high tech park, Liaoning Applicant before: Dalian Jingtuo Photoelectric Co.,Ltd. |
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Address after: 523000 2nd, 3rd and 5th floors of Building E, Xinmusheng Low Carbon Science Park, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Patentee after: Shenzhen Xinguangtai Electronic Technology Co.,Ltd. Address before: 518000 2nd, 3rd and 5th Floors of Building E, Xinmusheng Low Carbon Science Park, Pinghu Street, Longgang District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN KN-LIGHT ELECTRONIC TECHNOLOGY CO.,LTD. |
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Denomination of invention: New technology of making LED filament without thread Effective date of registration: 20230118 Granted publication date: 20180807 Pledgee: Shenzhen Branch of Huishang Bank Co.,Ltd. Pledgor: Shenzhen Xinguangtai Electronic Technology Co.,Ltd. Registration number: Y2023980031372 |
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