CN109285938B - High-thermal-stability chip-level LED packaging method and product thereof - Google Patents
High-thermal-stability chip-level LED packaging method and product thereof Download PDFInfo
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- CN109285938B CN109285938B CN201811178223.1A CN201811178223A CN109285938B CN 109285938 B CN109285938 B CN 109285938B CN 201811178223 A CN201811178223 A CN 201811178223A CN 109285938 B CN109285938 B CN 109285938B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
The invention belongs to the field related to the semiconductor manufacturing technology and discloses a high-thermal-stability chip-scale LED packaging method, which comprises the following steps: firstly, a plurality of LED chips are attached to a ceramic substrate through eutectic bonding, then fluorescent glass slurry is coated on the ceramic substrate, fluorescent glass layers are obtained on the top and the side surfaces of the chips through low-temperature sintering, and then the LED devices are obtained through cutting; or eutectic bonding of a plurality of LED chips on the ceramic substrate, coating a light blocking layer on the side surface of each chip, bonding the prepared fluorescent glass sheet on the top of each chip, and finally cutting to obtain the LED device. The invention also discloses a corresponding LED packaging structure. The invention not only effectively avoids the problems of fluorescent layer aging and carbonization caused by chip heating under high current density, but also improves the thermal stability of the LED device, and is particularly suitable for solving the technical problems of production efficiency, light color consistency and the like in the chip-scale LED packaging process.
Description
Technical Field
The invention belongs to the field related to semiconductor manufacturing technology, and particularly relates to a high-thermal-stability chip-scale LED packaging method and a product thereof.
Background
A Light Emitting Diode (LED) is an electroluminescent semiconductor device that emits Light by recombination of band-to-band transition radiation of electrons and holes. Compared with traditional illumination light sources such as incandescent lamps and fluorescent lamps, the LED has the advantages of high lighting effect, long service life, environmental protection, energy conservation, compact structure and the like, and is considered as a new generation of green illumination light source. Among them, the white light LED has been widely used in the fields of illumination and backlight display, such as road illumination, indoor illumination, automobile headlights, television backlight, mobile phone flash lights, etc.
The LED packaging is one of key links for realizing the LED from a chip to a final product, and plays roles in mechanical protection, electrical interconnection, light extraction, heat dissipation and the like. The conventional LED package usually implements processes such as Chip mounting, wire bonding, glue dispensing (fluorescent powder), coating, etc. on a single LED Chip, and has many process steps, low process integration level, poor product consistency, and high package cost, so that it is difficult to meet the complex requirements of higher-quality modern packages such as Chip Scale Packaging (CSP).
More specifically, the so-called chip scale package LED is defined in the art as a package element having the same volume as the LED chip or a volume not greater than 20% of the LED chip and having complete functions. However, further research has shown that the prior art LED packaging process still has the following technical drawbacks or shortcomings: firstly, the existing fluorescent powder glue can generate particle precipitation and local concentration change during curing, the uniformity of the fluorescent powder layer is difficult to control during actual processing, and the repeatability and the light-color consistency of an LED product can be influenced; secondly, because the CSP packaged LED device has high optical density, the heat generated by the LED chip and the secondary heat generated by the phosphor powder during the light color conversion process are large, and the organic phosphor glue has low thermal conductivity and poor thermal stability, and is prone to serious aging yellowing, carbonization and other problems under long-term thermal radiation and light irradiation, directly resulting in the reduction of LED light-emitting efficiency, light color shift and reliability reduction. Accordingly, there is a need to develop new LED packaging technology to better meet the above technical difficulties in the modern LED packaging process, especially the CSP packaging process.
Disclosure of Invention
Aiming at the defects or improvement requirements of the prior art, the invention provides a high-thermal-stability chip-scale LED packaging method and a product thereof, wherein the components and the proportion of a fluorescent powder layer are subjected to targeted adjustment, and key process conditions of coating, low-temperature sintering and other operations of the fluorescent powder layer on the top and/or the side surface of an LED chip are optimized and improved, so that various problems caused by original organic fluorescent powder glue are effectively avoided, and the thermal stability and the light color consistency of an LED device can be improved, therefore, the high-thermal-stability chip-scale LED packaging method and the product thereof are particularly suitable for application occasions such as high-optical-density chip-scale packaging processes.
Accordingly, according to one aspect of the present invention, there is provided a method for packaging a chip scale LED with high thermal stability, the method comprising the steps of:
(a) bonding and mounting step of LED chip
Attaching a plurality of flip LED chips on a ceramic substrate in a eutectic bonding mode;
(b) preparation and coating steps of fluorescent glass paste
Coating a layer of fluorescent glass slurry with uniform thickness on the whole surface of a ceramic substrate attached with a plurality of flip LED chips, wherein the fluorescent glass slurry covers the top and the side surfaces of the LED chips; further, the components of the fluorescent glass paste were set as follows: the fluorescent powder is made of photoluminescent materials, the mixing amount of the photoluminescent materials is 5% -40% of the total weight of the sizing agent, the glass powder is made of low-melting-point glass materials with the glass transition temperature lower than 300 ℃ and the mixing amount of the low-melting-point glass materials is 20% -70% of the total weight of the sizing agent, the binder is made of a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1% -5% of the total weight of the sizing agent and 15% -40% of the total weight of;
(c) low temperature sintering step of fluorescent glass layer
Placing the ceramic substrate coated with the fluorescent glass slurry in the step (b) in a high-temperature furnace, heating the temperature from room temperature to 250-350 ℃, carrying out heat preservation sintering for 2-30 min in an air environment, and then cooling the ceramic substrate to room temperature along with the furnace, thereby forming fluorescent glass layers with uniform thickness on the top and the side surfaces of the LED chip;
(d) forming step of LED chip
And (c) cutting and slicing the ceramic substrate with the fluorescent glass layer formed in the step (c), and obtaining a chip scale package LED product.
As a further preference, for the fluorescent glass paste, wherein the phosphor is preferably selected from one or a combination of the following: yellow fluorescent powder, green fluorescent powder, blue fluorescent powder, red fluorescent powder and quantum dot materials; the glass material preferably contains SnF2-SnO-P2O5The low melting point glass powder of (1).
Further preferably, in the step (d), the fluorescent glass layer on the top of the LED chip is preferably thinned to a thickness of about 0.1 to 0.5mm, and more preferably about 0.3mm, and the fluorescent glass layer on the side of the LED chip is preferably thinned to a thickness of about 0.1 to 0.3mm, and more preferably about 0.2 mm.
According to another aspect of the present invention, there is provided another method for packaging a chip scale LED with high thermal stability, the method comprising the steps of:
(i) bonding and mounting step of LED chip
Attaching a plurality of flip LED chips on a ceramic substrate in a eutectic bonding mode;
(ii) coating and forming step of light blocking layer
Respectively coating and forming light blocking layers in the interval regions among the flip LED chips on the ceramic substrate, wherein the heights of the light blocking layers are equal to the thicknesses of the LED chips;
(iii) processing steps of fluorescent glass sheet
Selecting common soda-lime glass as a substrate, and then coating a layer of fluorescent glass slurry with uniform thickness on the substrate, wherein the fluorescent glass slurry comprises the following components: the fluorescent powder is made of photoluminescent materials, the mixing amount of the photoluminescent materials is 10% -60% of the total weight of the sizing agent, the glass powder is made of low-melting-point glass materials with the glass transition temperature lower than 600 ℃ and the mixing amount of the low-melting-point glass materials is 15% -70% of the total weight of the sizing agent, the binder is made of a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1% -5% of the total weight of the sizing agent and 15% -40% of the total weight of; then, placing the substrate coated with the fluorescent glass slurry in a high-temperature furnace, heating the substrate to 500-650 ℃ from room temperature, carrying out heat preservation sintering for 20-60 min in nitrogen atmosphere, then annealing at the temperature of 300-350 ℃ for more than 30min, and finally cooling to room temperature along with the furnace, thereby obtaining fluorescent glass sheets with uniform thickness;
(iv) bonding step of fluorescent glass pieces
Coating a heat-resistant bonding layer on the surface of the fluorescent glass sheet in a spin coating manner, aligning the heat-resistant bonding layer with the ceramic substrate, pressurizing, and heating and curing to realize adhesive bonding between the fluorescent glass sheet and the ceramic substrate;
(v) forming step of LED chip
And (4) cutting and slicing the ceramic substrate bonded with the fluorescent glass sheet in the step (iv) to obtain a chip scale package LED product.
As a further preference, in the step (ii), the emissivity of the light-blocking layer is preferably set to be more than 90%, the withstanding temperature is more than 200 ℃, and the material is white inorganic material.
As a further preference, in step (iii), for the fluorescent glass paste, wherein the phosphor is preferably selected from one or a combination of the following: yellow fluorescent powder, green fluorescent powder, blue fluorescent powder, red fluorescent powder and quantum dot materials; the low-melting-point glass material is preferably SiO with the molecular formula of2-B2O3-borosilicate glass frit with ZnO.
As a further preference, in the step (iv), the adhesive bonding process preferably uses transparent high temperature resistant silicone, epoxy resin or ultraviolet curing agent as the adhesive material, and the heat resistant temperature thereof is set to be more than 150 ℃.
As a further preference, in step (v), the dicing and slicing operation is preferably performed using a laser cutting process.
According to another aspect of the invention, a corresponding chip scale LED package product is also provided.
Generally, compared with the existing various white light LED chip manufacturing processes, the technical scheme of the invention can well meet the thermal stability requirement of the chip-level LED packaging device by introducing the advantages of good heat resistance, strong thermal reliability and the like of glass materials; on the other hand, by controlling and improving the key process conditions of the whole chip manufacturing process, more practical tests show that a fluorescent glass layer with more uniform thickness can be realized on the ceramic substrate, and more importantly, the light-color consistency and the process integration level of the LED device can be obviously improved, so that the method is particularly suitable for application occasions such as high-optical-density chip-scale packaging processes.
Drawings
FIG. 1 is a process flow diagram of a method of LED packaging constructed in accordance with a preferred embodiment;
fig. 2 is a process flow diagram of a method of packaging an LED constructed in accordance with another preferred embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Aiming at the defects or improvement requirements of the traditional LED packaging technology, the invention mainly aims to provide a chip-scale LED packaging method with high thermal stability, so as to solve the technical problems of low LED light-emitting efficiency, light color shift, reliability reduction and the like which are inevitable in the current LED packaging, and meanwhile, the key indexes of thermal conductivity, thermal stability and the like of fluorescent powder glue are obviously improved.
Correspondingly, the chip-scale LED packaging method with high thermal stability mainly comprises the following steps:
firstly, a plurality of flip LED chips can be mounted on a ceramic substrate in a eutectic bonding mode;
then, coating a layer of fluorescent glass slurry with uniform thickness on the whole surface of the ceramic substrate attached with a plurality of flip LED chips, wherein the fluorescent glass slurry covers the top and the side surfaces of the LED chips; further, the components of the fluorescent glass paste were set as follows: the fluorescent powder is made of photoluminescent materials, the mixing amount of the photoluminescent materials is 5% -40% of the total weight of the sizing agent, the glass powder is made of low-melting-point glass materials with the glass transition temperature lower than 300 ℃ and the mixing amount of the low-melting-point glass materials is 20% -70% of the total weight of the sizing agent, the binder is made of a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1% -5% of the total weight of the sizing agent and 15% -40% of the total weight of;
then, placing the ceramic substrate coated with the fluorescent glass slurry in a high-temperature furnace, heating the temperature to 250-350 ℃ from room temperature, carrying out heat preservation sintering for 2-30 min in an air environment, and then cooling the ceramic substrate to room temperature along with the furnace, thereby forming fluorescent glass layers with uniform thickness on the top and the side surfaces of the LED chip;
and finally, cutting and slicing the ceramic substrate with the fluorescent glass layer, and obtaining a chip-scale packaged LED product.
More specifically, the coating method may include screen printing, spin coating, spray coating, and the like, the low-temperature sintering is sintering in air or an inert gas environment, the sintering temperature is preferably controlled to 300 ℃, and the sintering time is preferably 5 min.
The other chip-scale LED packaging method with high thermal stability of the invention mainly comprises the following steps:
firstly, a plurality of flip LED chips can be attached on the ceramic substrate in a eutectic bonding mode
Then, respectively coating and forming light blocking layers in the interval regions among the flip LED chips on the ceramic substrate, wherein the heights of the light blocking layers are equal to the thicknesses of the LED chips;
and then, preparing a fluorescent glass sheet, namely coating a layer of fluorescent glass slurry with uniform thickness on a glass substrate, and then sintering to obtain the fluorescent glass sheet with uniform thickness, wherein the fluorescent glass slurry comprises the following components: the fluorescent powder is made of photoluminescent materials, the mixing amount of the photoluminescent materials is 10% -60% of the total weight of the sizing agent, the glass powder is made of low-melting-point glass materials with the glass transition temperature lower than 600 ℃ and the mixing amount of the low-melting-point glass materials is 15% -70% of the total weight of the sizing agent, the binder is made of a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1% -5% of the total weight of the sizing agent and 15% -40% of the total weight of;
then, a heat-resistant bonding layer is coated on the surface of the fluorescent glass sheet in a spin coating mode, and then heating and curing are carried out, so that the adhesive bonding between the fluorescent glass layer and the ceramic substrate is realized;
and finally, cutting and slicing the ceramic substrate bonded with the fluorescent glass layer to obtain a chip-scale packaged LED product.
Specific examples are given below to more clearly explain the process flow and the important mechanism and key process conditions of the present invention in detail.
Example 1
Referring to fig. 1, embodiment 1 provides a chip-scale LED package structure with high thermal stability, which includes an LED chip 12, a ceramic substrate 11, and a fluorescent glass layer 17. The LED chip 12 is attached to a circuit layer of the ceramic substrate 11 through eutectic bonding, electrical interconnection is achieved through a welding spot 13, and the fluorescent glass layer 17 is located on the top and the side face of the LED chip 12 and prepared through direct coating and low-temperature sintering of fluorescent glass slurry 15.
The chip scale LED packaging method of embodiment 1 may exemplarily include the following steps:
step 1, attaching the selected high-quality blue-light flip LED chip 12 to a circuit layer of a ceramic substrate 11 through an eutectic bonding head 14 of an eutectic bonding machine;
step 2, coating fluorescent glass slurry 15 with uniform thickness on the ceramic substrate 11, covering the top and the side of the LED chip 12 with the slurry layer, and controlling a scraper 16 to adjust the thickness and the uniformity of the slurry layer;
the preparation process of the fluorescent glass slurry 15 comprises the following steps: measuring 4 g of terpineol and 0.2 g of ethyl cellulose, ultrasonically stirring at 80 ℃ until the ethyl cellulose is completely dissolved, and then respectively adding 2 g of YAG yellow fluorescent powder and 8 g of low-temperature glass powder (the main component is SnF)2-SnO-P2O5The glass transition temperature is 250 ℃), and finally the homogeneous fluorescent glass slurry 15 is prepared by magnetic stirring for 20 min.
And 3, placing the ceramic substrate coated with the slurry layer in a high-temperature furnace, heating the temperature from room temperature to 300 ℃, carrying out heat preservation sintering for 10min in an air environment, and then cooling the ceramic substrate to room temperature along with the furnace to obtain a fluorescent glass layer 17 with uniform thickness, wherein the thickness of the fluorescent glass layer on the top of the LED chip 12 is 0.3mm, and the thickness of the fluorescent glass layer on the side surface is 0.2 mm.
And 4, cutting and slicing the ceramic substrate 11 by using a laser cutting machine to obtain the chip-scale packaged LED 18.
Example 2
Referring to fig. 2, the embodiment provides another chip-scale LED package structure with high thermal stability, which includes an LED chip 22, a ceramic substrate 21, a light blocking layer 25, and a fluorescent glass sheet 26. The LED chip 22 is eutectic bonded on a circuit layer of the ceramic substrate 21, electric interconnection is achieved through a welding spot 23, the light blocking layer 25 is coated on the side face of the LED chip 22, and the fluorescent glass sheet 26 is bonded on the top of the LED chip 22.
The manufacturing method of the present embodiment includes the steps of:
step 1, attaching the selected high-quality ultraviolet flip LED chip 22 to a circuit layer of a ceramic substrate 21 through an eutectic bonding head 24 of an eutectic bonding machine;
step 2, coating light blocking layers 25 among the LED chips 22, and controlling the height of the light blocking layers 25 to be the same as the thickness of the LED chips 22 by grinding the light blocking layers, wherein the light blocking layers 25 are made of white titanium dioxide paint for example, and the reflectivity is 95%;
step 3, preferably, a fluorescent glass layer can be prepared on the glass substrate by adopting a screen printing and low-temperature sintering process, so that a fluorescent glass sheet 26 is obtained, and the shape and the size of the fluorescent glass sheet are consistent with those of the ceramic substrate;
the fluorescent glass sheet 26 is prepared by the following steps: 3.5 g terpineol and 0.15 g ethyl cellulose are weighed out, stirred ultrasonically at 80 ℃ until the ethyl cellulose is completely dissolved, and then 0.5 g CaAlSiN is respectively added3:Eu2+Red phosphor, 1 g Ba2MgSi2O7:Eu2+Green phosphor, 0.5 g (Sr, Ba)3MgSi2O8:Eu2+Blue phosphor and 8 g borosilicate glass frit (SiO as a major component)2-B2O3ZnO with the glass transition temperature of 520 ℃) and preparing homogeneous fluorescent glass slurry by magnetic stirring for 30 min; then, printing fluorescent glass slurry on a glass substrate by utilizing screen printing, and adjusting the thickness of the slurry layer by controlling the printing times; and finally, placing the glass sheet coated with the slurry layer in a high-temperature furnace, heating the glass sheet to 570 ℃ from the room temperature, carrying out heat preservation sintering for 30min in the nitrogen atmosphere, annealing for 20min at 300 ℃ and cooling the glass sheet to the room temperature along with the furnace, thereby obtaining the fluorescent glass sheet 26 with uniform thickness.
Step 4, preferably, a spin coating method is adopted to spin coat a heat-resistant silica gel bonding layer with the thickness of 30 microns on the surface of the fluorescent glass sheet 26, then the fluorescent glass sheet 26 is bonded with the ceramic substrate 21 (containing the LED chip 22), and the curing is carried out for 30min at 150 ℃, so that the adhesive bonding between the fluorescent glass sheet 25 and the ceramic substrate 21 is realized;
and 5, cutting and slicing the ceramic substrate 21 by using a laser cutting machine to obtain the chip-scale packaged LED 27.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (6)
1. A method for packaging a chip-scale LED with high thermal stability is characterized by comprising the following steps:
(a) bonding and mounting step of LED chip
Attaching a plurality of flip LED chips on a ceramic substrate in a eutectic bonding mode;
(b) preparation and coating steps of fluorescent glass paste
Coating a layer of fluorescent glass slurry with uniform thickness on the whole surface of a ceramic substrate attached with a plurality of flip LED chips, wherein the fluorescent glass slurry covers the top and the side surfaces of the LED chips; further, the components of the fluorescent glass paste were set as follows: the fluorescent powder is made of photoluminescent materials, the mixing amount of the photoluminescent materials is 5% -40% of the total weight of the sizing agent, the glass powder is made of low-melting-point glass materials with the glass transition temperature lower than 300 ℃ and the mixing amount of the low-melting-point glass materials is 20% -70% of the total weight of the sizing agent, the binder is made of a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1% -5% of the total weight of the sizing agent and 15% -40% of the total weight of;
(c) low temperature sintering step of fluorescent glass layer
Placing the ceramic substrate coated with the fluorescent glass slurry in the step (b) in a high-temperature furnace, heating the temperature from room temperature to 250-350 ℃, carrying out heat preservation sintering for 2-30 min in an air environment, and then cooling the ceramic substrate to room temperature along with the furnace, thereby forming fluorescent glass layers with uniform thickness on the top and the side surfaces of the LED chip;
(d) forming step of LED chip
And (c) cutting and slicing the ceramic substrate with the fluorescent glass layer formed in the step (c), wherein the thickness of the fluorescent glass layer at the top of the LED chip is thinned to 0.1-0.5 mm, the thickness of the fluorescent glass layer at the side of the LED chip is thinned to 0.1-0.3 mm, and a chip-scale packaged LED product is obtained.
2. A method of packaging high thermal stability chip scale LED as claimed in claim 1, wherein for the fluorescent glass paste, the phosphor is selected from one or a combination of the following materials: yellow fluorescent powder, green fluorescent powder, blue fluorescent powder, red fluorescent powder and quantum dot materials; the glass material comprises the following components of SnF2-SnO-P2O5The low melting point glass powder of (1).
3. A method for packaging a chip-scale LED with high thermal stability is characterized by comprising the following steps:
(i) bonding and mounting step of LED chip
Attaching a plurality of flip LED chips on a ceramic substrate in a eutectic bonding mode;
(ii) coating and forming step of light blocking layer
Respectively coating and forming light blocking layers in the interval regions among the flip LED chips on the ceramic substrate, wherein the heights of the light blocking layers are equal to the thicknesses of the LED chips; the emissivity of the light blocking layer is set to be more than 90%, the enduring temperature is more than 200 ℃, and the material is white inorganic material;
(iii) processing steps of fluorescent glass sheet
Selecting common soda-lime glass as a substrate, and then coating a layer of fluorescent glass slurry with uniform thickness on the substrate, wherein the fluorescent glass slurry comprises the following components: the fluorescent powder is made of photoluminescent materials, the mixing amount of the photoluminescent materials is 10% -60% of the total weight of the sizing agent, the glass powder is made of low-melting-point glass materials with the glass transition temperature lower than 600 ℃ and the mixing amount of the low-melting-point glass materials is 15% -70% of the total weight of the sizing agent, the binder is made of a mixture of ethyl cellulose and terpineol, and the mixing amounts of the ethyl cellulose and the terpineol are 1% -5% of the total weight of the sizing agent and 15% -40% of the total weight of; then, placing the substrate coated with the fluorescent glass slurry in a high-temperature furnace, heating the substrate to 500-650 ℃ from room temperature, carrying out heat preservation sintering for 20-60 min in nitrogen atmosphere, then annealing at the temperature of 300-350 ℃ for more than 30min, and finally cooling to room temperature along with the furnace, thereby obtaining fluorescent glass sheets with uniform thickness;
(iv) bonding step of fluorescent glass pieces
Coating a heat-resistant bonding layer on the surface of the fluorescent glass sheet in a spin coating manner, aligning the heat-resistant bonding layer with the ceramic substrate, pressurizing, and heating and curing to realize adhesive bonding between the fluorescent glass sheet and the ceramic substrate;
(v) forming step of LED chip
And (4) cutting and slicing the ceramic substrate bonded with the fluorescent glass sheet in the step (iv) to obtain a chip scale package LED product.
4. A highly thermally stable chip scale LED packaging method as claimed in claim 3, wherein in step (iii), for said fluorescent glass paste, the phosphor is selected from one or a combination of the following substances: yellow fluorescent powder, green fluorescent powder, blue fluorescent powder, red fluorescent powder and quantum dot materials; the low-melting-point glass material has a molecular formula of SiO2-B2O3-borosilicate glass frit with ZnO.
5. A highly thermally stable chip scale LED packaging method as claimed in claim 4, wherein in step (iv), the adhesive bonding process uses transparent high temperature resistant silicone, epoxy resin or uv curing agent as adhesive material, and the heat resistant temperature is set to be more than 150 ℃.
6. A chip scale LED package structure product obtained by the method according to any one of claims 1 to 5.
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| CN110854108B (en) * | 2019-11-06 | 2021-08-27 | 安晟技术(广东)有限公司 | Flip LED chip CSP manufacturing method |
| CN113557609B (en) * | 2021-01-14 | 2023-12-05 | 泉州三安半导体科技有限公司 | LED light-emitting device and manufacturing method thereof |
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| CN105006511A (en) * | 2015-07-29 | 2015-10-28 | 广州市鸿利光电股份有限公司 | LED package method |
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