CN109545910A - A kind of direct White-light LED chip manufacturing method having high thermal stability - Google Patents
A kind of direct White-light LED chip manufacturing method having high thermal stability Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention belongs to semiconductor processing technology related fieldss, and disclose a kind of direct White-light LED chip manufacturing method for having high thermal stability, comprising: which epitaxial growth prepares LED epitaxial layer on a sapphire substrate, then in Sapphire Substrate backside coating fluorescent glass slurry, fluorescent glass layer is obtained by low-temperature sintering again, then electrode and pad are made on epitaxial layer, are finally thinned, are polished fluorescent glass layer and sliver obtains direct White-light LED chip；Or LED wafer and fluorescent glass piece are made first, then realize that fluorescent glass piece and Sapphire Substrate wafer bonding, last cutting crystal wafer piece obtain direct White-light LED chip by bonding technology.Through the invention, the fluorescent powder coating technique in white light LEDs manufacturing process is avoided, and ensure that fluorescent layer thickness is uniform, improves white light LEDs production efficiency and photochromic consistency；It solves the problems such as phosphor gel thermal reliability is poor simultaneously, improves white light LEDs thermal stability.
Description
Technical field
The invention belongs to semiconductor processing technology related fieldss, have the straight of high thermal stability more particularly, to a kind of
Connect White-light LED chip manufacturing method.
Background technique
Light emitting diode (Light Emitting Diode, LED) is radiated again using the band-to-band transition in electronics and hole
Close luminous electroluminescent semiconductor devices.Compared to conventional illumination sources such as incandescent lamp, fluorescent lamps, LED has light efficiency height, longevity
Order length, environmental protection and energy saving, it is compact-sized the advantages that, it is considered to be new generation of green lighting source.Wherein, white light LEDs are answered extensively
For illuminating and the fields such as backlight display, such as road lighting, room lighting, headlight for vehicles, television backlight, mobile phone flashlight.
For the manufacturing process of white light LEDs, epitaxial material growth and chip design and manufacturing are usually first completed,
Then implement patch (die bond), routing respectively, with the techniques such as glue (fluorescent powder), coating for single LED chip；Its work being related to
Skill step is more, and process integration is low, at high cost.As the fluorescent powder coating operation of one of critical process, in the prior art mostly
It is processed using the phosphor gel that fluorescent powder grain is mixed to form with organic polymer (epoxy resin or silica gel etc.).
However, further investigations have shown that: firstly, since phosphor gel is also easy to produce particle precipitating and localized rich in solidification
Degree variation is difficult to control phosphor powder layer uniformity in actual processing, and will affect the repeatability and photochromic one of white light LEDs
Cause property；On the other hand, for White-light LED chip especially powerful for white light LEDs, heat and fluorescent powder that chip generates
The secondary calorific value generated in light conversion process is very big, since the thermal conductivity of organic fluorescence arogel is low, thermal stability is poor,
Lead to problems such as to radiate in Long Time Thermal and be easy to happen serious aging yellowing, carbonization under light irradiation, and causes LED and light occur
Effect reduction, photochromic offset and reliability decrease.Correspondingly, it is necessary to around direct White-light LED chip manufacturing process for this field
Technical problem carries out more in-depth study and discussion, to conform better to the White-light LED chip manufacture of high quality and high efficiency
Demand.
Summary of the invention
Aiming at the above defects or improvement requirements of the prior art, have the direct of high thermal stability the present invention provides a kind of
White-light LED chip manufacturing method, wherein make specific aim adjustment by component to phosphor powder layer and proportion, while also to it
The critical craft of the operations such as coating and bonding on substrate surface carries out control improvement, not only effectively avoids original organic glimmering
All kinds of problems caused by light arogel, and the process integration of White-light LED chip can be improved, process complexity is reduced, especially
It is to have higher thermal stability, the preferably advantages such as photochromic consistency compared with existing product.
Correspondingly, according to one aspect of the present invention, a kind of direct White-light LED chip for having high thermal stability is provided
Manufacturing method, which is characterized in that this method includes the following steps:
(a) procedure of processing of epitaxial wafer
In the front of Sapphire Substrate, LED epitaxial wafer is obtained by the way of epitaxial growth；
(b) outfit of fluorescent glass slurry and coating step
At the back side of the Sapphire Substrate, the uniform fluorescent glass slurry of a layer thickness is coated, the fluorescent glass slurry
Component sets as follows: fluorescent powder selects embedded photoluminescent material and its volume is the 10%~60% of slurry total weight, glass powder choosing
It selects low melting point glass material of the glass transition temperature lower than 500 DEG C and its volume is the 15%~70% of slurry total weight, glue
Knot agent is selected as the mixture of ethyl cellulose and terpinol, and its volume is respectively the 1%~5% and 15% of slurry total weight
~40%；
(c) sintering step of fluorescent glass layer
The LED epitaxial wafer for being coated with fluorescent glass slurry by step (b) is placed in high temperature furnace, rises to 300 by room temperature
DEG C~600 DEG C, then heat preservation sintering 10min~60min under air environment cools to room temperature with the furnace, thus in Sapphire Substrate
The back side form fluorescent glass layer in homogeneous thickness；
(d) forming step of LED chip
Electrode and pad are made in the LED epitaxial wafer for being formed with fluorescent glass layer by step (c), and to the fluorescence
Glassy layer is processed by shot blasting that then cutting obtains multiple single direct White-light LED chips after being thinned to 50 μm~120 μm,
Thus whole manufacturing process is completed.
As it is further preferred that in step (b), it is preferred to use the mode of silk-screen printing coats the fluorescent glass
Slurry, and it is uniform to adjust thickness by control screen mesh printing plate and the spacing of the Sapphire Substrate and the angle of scraper
Property.
As it is further preferred that for the fluorescent glass slurry, wherein in the preferably following substance of the fluorescent powder
One kind or combination: yellow fluorescent powder, green emitting phosphor, blue colour fluorescent powder, red fluorescence powder and quanta point material；The eutectic
Point glass material is preferably the TeO that molecular formula is2-B2O3-ZnO-Na2The tellurate glass powder of O, and its refractive index is set to
1.5~2.1.
As it is further preferred that the fluorescent glass layer is preferably thinned to 80 μm or so of thickness in step (d),
And the surface roughness after polishing is 50nm or less.
It is another aspect of this invention to provide that additionally providing another direct White-light LED chip for having high thermal stability
Manufacturing method, which is characterized in that this method includes the following steps:
(i) procedure of processing of circular wafer
In the front of Sapphire Substrate, LED epitaxial wafer is obtained by the way of epitaxial growth；Then, in the LED epitaxial wafer
Electrode and pad are made, thus to obtain LED circular wafer；
(ii) procedure of processing of fluorescent glass piece
Monocrystalline sapphire is chosen as matrix, the uniform fluorescent glass slurry of a layer thickness is then coated on the matrix,
The component of the fluorescent glass slurry sets as follows: fluorescent powder selects embedded photoluminescent material and its volume is the 10% of slurry total weight
~60%, glass powder selects low melting point glass material of the glass transition temperature lower than 600 DEG C and its volume is slurry total weight
15%~70%, binder is selected as the mixture of ethyl cellulose and terpinol, and its volume is respectively slurry total weight
1%~5% and 15%~40%；
(iii) sintering step of fluorescent glass piece
Will by step (ii) be coated with fluorescent glass slurry matrix be placed in high temperature furnace, by room temperature rise to 500 DEG C~
650 DEG C, heat preservation sintering 20min~60min under nitrogen atmosphere, then 300 DEG C~350 DEG C at a temperature of anneal 30min or more,
It finally cools to room temperature with the furnace, thus forms fluorescent glass piece in homogeneous thickness on the matrix；Then, described to being formed with
The matrix of fluorescent glass piece be processed by shot blasting after being thinned to 100 μm~300 μm；
(iv) bonding steps of matrix and circular wafer
It will be bonded by step (iii) treated matrix with the LED circular wafer, then para-linkage has fluorescence glass
The LED circular wafer of glass piece carries out cutting splitting, obtains single direct White-light LED chip, thus completes whole manufacturing process.
As it is further preferred that in step (ii), it is preferred to use the mode of silk-screen printing coats the fluorescence glass
Glass slurry, and it is uniform to adjust thickness by control screen mesh printing plate and the spacing of the Sapphire Substrate and the angle of scraper
Property.
As it is further preferred that wherein the fluorescent powder is preferably selected from following object for the fluorescent glass slurry
One of matter or combination: yellow fluorescent powder, green emitting phosphor, blue colour fluorescent powder, red fluorescence powder and quanta point material；It should
Low melting point glass material is preferably the SiO that molecular formula is2-B2O3The borosilicate glass powder of-ZnO, and its refractive index is set to
1.5~1.8.
As it is further preferred that the fluorescent glass layer is preferably thinned to 150 μm or so of thickness in step (iii)
Degree, and the surface roughness after polishing is 5~20nm.
As it is further preferred that in step (iv), it is preferred to use surface plasma activated bond technique is to execute
Bonding process is stated, process is as follows:
It is cleaned by ultrasonic the fluorescent glass piece and LED wafer first with acetone, ethyl alcohol and deionized water, then dries
It is spare；It bombards the surface of described matrix and the surface of the Sapphire Substrate respectively using plasma, realizes the cleaning on surface
And activation；Then, the Direct Bonding of described matrix Yu the Sapphire Substrate is completed in vacuum environment using bonder.
As it is further preferred that in step (iv), it is preferred to use spin coating proceeding executes the bonding process, mistake
Journey is as follows: first in the uniform silicone adhesive layer of fluorescent glass on piece spin coating a layer thickness, then by the fluorescent glass piece
On silicone adhesive layer be bonded with the Sapphire Substrate, and 150~200 DEG C at a temperature of solidify 60min or more, by
This completes the fluorescent glass piece and is bonded with the gluing between the LED wafer.
It is another aspect of this invention to provide that additionally providing corresponding directly White-light LED chip product, and it includes blue precious
Stone lining bottom, epitaxial layer, electrode and pad, fluorescent glass piece, it is characterised in that fluorescent glass piece is located at the back side of Sapphire Substrate,
It is prepared using low-temperature sintering fluorescent glass slurry or Direct Bonding fluorescent glass piece method.
In general, contemplated above technical scheme and existing all kinds of White-light LED chips manufacture work through the invention
Skill is compared, and is made specific aim adjustment by component to phosphor powder layer and proportion, is accordingly introduced heat-resist, thermal reliability is strong etc.
Material is given directions, and white light LEDs thermal stability can be directly improved；On the other hand, pass through the critical process to entire chip manufacturing process
Condition carries out control improvement, and more actual test shows to realize the more uniform fluorescent glass layer of thickness on wafer,
More importantly it has been remarkably improved white light LEDs spatial color uniformity and whole colour temperature consistency；In addition, direct white light LEDs
Chip avoids the fluorescent powder coating technique for restricting packaging efficiency and yield rate at present, improves process integration, thus especially
It is suitable for the application of high-power high density illumination.
Detailed description of the invention
Fig. 1 is the technique stream according to a kind of direct White-light LED chip manufacturing method constructed by a preferred embodiment
Journey schematic diagram；
Fig. 2 is according to a kind of direct White-light LED chip manufacturing method constructed by another preferred embodiment of the present invention
Process flow diagram；
Fig. 3 is according to a kind of direct White-light LED chip manufacturing method constructed by the another preferred embodiment of the present invention
Process flow diagram.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in the various embodiments of the present invention described below
Not constituting a conflict with each other can be combined with each other.
For the above defects or improvement requirements of conventional white light LED manufacture technology, the main purpose of the present invention is to provide
A kind of direct White-light LED chip manufacturing method having high thermal stability, to solve, white light LEDs process integration is low and cost
Height improves white light LEDs thermal stability and photochromic consistency.
Correspondingly, a kind of key step of direct White-light LED chip manufacturing method of the invention includes:
Firstly, LED epitaxial wafer can be obtained by epitaxial growth technology on for example sapphire substrate；
Then, in Sapphire Substrate backside coating fluorescent glass slurry in homogeneous thickness, slurry layer thickness is preferably 50~
300 μm, thermal expansion coefficient is preferably controlled to 1~10.0 × 10-6K-1Below.In particular, the component of the fluorescent glass slurry is set
As follows: it is the 10%~60% of slurry total weight that fluorescent powder, which selects embedded photoluminescent material and its volume, and glass powder selects vitrifying
Low melting point glass material of the transition temperature lower than 500 DEG C and its volume are the 15%~70% of slurry total weight, binder selection
For the mixture of ethyl cellulose and terpinol, and its volume is respectively the 1%~5% and 15%~40% of slurry total weight；
Then, the epitaxial wafer for being coated with pulp layer carries out low-temperature sintering, makes pulp layer vitrifying, obtains fluorescent powder distribution
Uniform fluorescent glass layer；
Then, p, n-electrode and metal pad are made in extension on piece using chip manufacture technique；
Finally, being thinned, being polished to fluorescent glass layer, it is then cut out sliver and obtains single direct White-light LED chip, it is glimmering
Thickness after light glassy layer is thinned is preferably 50~150 μm, and the surface roughness of polishing is controllable to 10~100nm.
More specifically, the coating method may include the techniques such as silk-screen printing, spin coating, spraying, curtain coating, and the low temperature is burnt
Become and be sintered under air or inert gas environment, sintering temperature is preferably controlled as less than 500 DEG C, sintering time be 20~
60min。
The key step of the direct White-light LED chip manufacturing method of another of the invention then includes:
Firstly, LED wafer can be made by epitaxial growth and chip manufacture technique on a sapphire substrate；
Then, the uniform fluorescent glass slurry of coating thickness on matrix, and fluorescence glass is contained by low-temperature sintering production
The fluorescent glass piece of glass layer, then fluorescent glass piece is thinned, polishing treatment, matrix is glass or sapphire, and light transmittance is big
In 85%, the thickness of matrix is preferably 50~200 μm after being thinned, polishing, and fluorescent glass thickness degree is controllable to 20~100 μm,
Surface roughness is 5~30nm；In particular, the component setting of the fluorescent glass slurry is as follows: fluorescent powder selects luminescence generated by light material
Material and its volume are the 10%~60% of slurry total weight, the low melting point that glass powder selects glass transition temperature to be lower than 600 DEG C
Glass material and its volume are the 15%~70% of slurry total weight, and binder is selected as the mixing of ethyl cellulose and terpinol
Object, and its volume is respectively the 1%~5% and 15%~40% of slurry total weight；
Then, the wafer bonding between fluorescent glass piece and Sapphire Substrate is realized by bonding technology；
Finally, the LED wafer after bonding is carried out cutting splitting, single direct White-light LED chip is obtained, improves white light
LED heat stability.
In addition, surface plasma activated bond mode or adhesive bond mode can be used in above-mentioned bonding technology.Work as use
The former when, matrix surface and sapphire surface are activated for example, by using the argon gas of low energy, bonding pressure is controllable
For 5~20MPa, bonding time is 10~50min, vacuum pressure 10-4~10-6Pa.When using the latter, binding material is
Silica gel, epoxy resin or the high molecular polymer of heat cure, using spin coating, printing or spot-on method by binding material coated on glimmering
Light glass sheet surface.
Some specific embodiments are given below, process flow of the invention and important machine is explained in detail so as to apparent
Reason and critical craft.
Embodiment 1
Referring to Fig. 1, the embodiment 1 provides a kind of direct White-light LED chip structure of high heat stability comprising Lan Bao
Stone lining bottom 11, epitaxial layer 12, electrode and pad 17, fluorescent glass layer 16.The epitaxial layer 12 is produced in Sapphire Substrate 11,
Electrode and pad 17 are produced on epitaxial layer 12, and the fluorescent glass layer 16 is directly produced on by coating and low temperature sintering technology
11 back side of Sapphire Substrate.
The direct White-light LED chip manufacturing method of the present embodiment 1 comprising following steps:
Step 1, blue-ray LED epitaxial layer 12 is obtained by epitaxial growth in Sapphire Substrate 11；
Step 2, using being screen printed onto fluorescent glass slurry 13 of 11 backside coating of Sapphire Substrate with a thickness of 100 μm,
Print thickness uniformity is adjusted by the angle of the spacing and scraper 15 of control screen mesh printing plate 14 and Sapphire Substrate 11；
13 preparation process of fluorescent glass slurry are as follows: 5 grams of terpinol and 0.5 gram of ethyl cellulose are measured, at 70 DEG C
Ultrasonic agitation is completely dissolved up to ethyl cellulose, is then respectively adding 4 grams of YAG yellow fluorescent powder and 6 grams of tellurate glass
Glass powder (main component TeO2-B2O3-ZnO-Na2O, glass transition temperature are 400 DEG C, refractive index 1.82, thermal expansion system
Number is 5.0 × 10-6K-1), the fluorescent glass slurry 13 of homogeneous is prepared into finally by magnetic agitation 30min.
Step 3, the Sapphire Substrate 11 for being coated with pulp layer is placed in high temperature furnace, rises to 450 DEG C by room temperature, air ring
Heat preservation sintering 30min under border, then cools to room temperature with the furnace, obtains fluorescent glass layer 15 in homogeneous thickness；
Step 4, electrode and pad 17 are made in extension on piece using the chip manufactures such as photoetching, development, etching, deposition technique
(p, n-electrode and golden soldering disk)；
Step 5, fluorescent glass layer 16 is thinned, polished, so that fluorescent glass layer is with a thickness of 60 μm, surface roughness
For 50nm, single direct White-light LED chip 18 is obtained followed by laser cutting machine cutting crystal wafer piece.
Embodiment 2
Referring to Fig. 2, this embodiment offers the direct White-light LED chip structures of another high heat stability comprising
Sapphire Substrate 21, epitaxial layer 22, electrode and pad 23, fluorescent glass layer 28 (including matrix 24).The epitaxial layer 22 makes
In Sapphire Substrate 21, electrode and pad 23 are produced on epitaxial layer 22, the fluorescent glass layer 28 first by coating and
Low temperature sintering technology is produced on matrix 24, is then bonded to Sapphire Substrate 21 by surface plasma activated bond technique and carries on the back
Face.
The manufacturing method of the present embodiment the following steps are included:
Step 1, ultraviolet LED epitaxial layer 22 is obtained by epitaxial growth in Sapphire Substrate 21, is then added using chip
Work technique (photoetching, etching, deposition etc.) makes electrode and pad 23 (p, n-electrode and golden soldering disk), to obtain LED wafer
Piece；
Step 2, fluorescent glass piece, preparation process are prepared by silk-screen printing and low temperature sintering technology are as follows:
1) it chooses and is used as matrix 24 with a thickness of 300 μm of monocrystalline sapphire (light transmittance is greater than 85%, refractive index 1.77), adopt
It is cleaned by ultrasonic with acetone, ethyl alcohol and deionized water, it is spare after drying；
2) 10 grams of terpinol and 1 gram of ethyl cellulose are measured, the ultrasonic agitation at 70 DEG C is until ethyl cellulose is complete
Fully dissolved is then respectively adding 4 grams of CaAlSiN3:Eu2+Red fluorescence powder, 6 grams of Ba2MgSi2O7:Eu2+Green emitting phosphor, 4
Gram (Sr, Ba)3MgSi2O8:Eu2+Blue colour fluorescent powder and 10 grams of borosilicate glass powder (main component SiO2-B2O3-
ZnO, glass transition temperature are 520 DEG C, and refractive index 1.76, thermal expansion coefficient is 8.1 × 10-6K-1), finally by magnetic force
Stirring 30min is prepared into the fluorescent glass slurry 25 of homogeneous.
3) coating a layer thickness on substrate 24 using silk-screen printing is 60 μm of fluorescent glass slurries 25, by controlling silk screen
The spacing of halftone 26 and matrix 24 and the angle of scraper 27 adjust print thickness uniformity；
4) LED wafer for being coated with pulp layer is placed in high temperature furnace, is risen to 570 DEG C by room temperature, is protected under nitrogen atmosphere
Temperature sintering 40min, then anneal at 300 DEG C 30min, room temperature is finally cooled to the furnace, to obtain thickness on substrate 24
Uniform fluorescent glass layer 28；
5) matrix 24 of fluorescent glass piece is thinned, polishing treatment, after processing fluorescent glass piece with a thickness of 200 μm,
Surface roughness is 5nm.
Step 3, the matrix 24 of fluorescent glass piece and the indigo plant of LED wafer are realized using surface plasma activated bond technique
Wafer bonding between jewel substrate 21, bonding process are as follows:
1) it using acetone, ethyl alcohol and deionized water ultrasonic cleaning fluorescent glass piece and LED wafer, is then dried for standby；
2) indigo plant on 24 surface of matrix and LED wafer of bombarding fluorescent glass piece respectively using plasma 29 (argon gas) is precious
The cleaning and activation on surface are realized in 21 surface of stone lining bottom；
3) matrix 24 of fluorescent glass piece and the Sapphire Substrate of LED wafer are completed in vacuum environment using bonder
21 Direct Bonding, bonding pressure 10MPa, bonding time 20min, vacuum pressure 10-5Pa。
Step 4, the LED wafer for being bonded with fluorescent glass piece is subjected to cutting splitting using laser cutting machine, obtained single
Directly White-light LED chip 30.
Embodiment 3
Refering to Fig. 3, the direct White-light LED chip structure of another high heat stability is present embodiments provided comprising blue
Jewel substrate 31, epitaxial layer 32, electrode and pad 33, fluorescent glass layer 38 (including matrix 34).The epitaxial layer 32 is produced on
In Sapphire Substrate 31, electrode and pad 33 are produced on epitaxial layer 32, the fluorescent glass layer 38 first by coating and it is low
Warm sintering process is produced on matrix 34, is then bonded to 31 back side of Sapphire Substrate by gluing bonding technology.
Manufacturing method corresponding to the present embodiment comprising following steps:
Step 1, blue-ray LED epitaxial layer 32 is obtained by epitaxial growth in Sapphire Substrate 31, then utilizes chip
Processing technology (photoetching, etching, deposition etc.) makes electrode and pad 33 (p, n-electrode and golden soldering disk), to obtain LED wafer
Piece；
Step 2, fluorescent glass piece, preparation process are prepared by silk-screen printing and low temperature sintering technology are as follows:
1) it chooses and is used as matrix 34 with a thickness of 200 μm of soda-lime glass pieces (light transmittance is greater than 90%, refractive index 1.55), use
Acetone, ethyl alcohol and deionized water ultrasonic cleaning, it is spare after drying；
2) 15 grams of terpinols and 1.5 grams of ethyl celluloses are measured, the ultrasonic agitation at 70 DEG C is until ethyl cellulose is complete
Dissolution, is then respectively adding 9 grams of YAG yellow fluorescent powders, 3 grams of CaAlSiN3:Eu2+Red fluorescence powder and 12 grams of phosphate glass powders
(main component P2O5-ZnO-B2O3, glass transition temperature is 450 DEG C, and refractive index 1.6, thermal expansion coefficient is 9.0 × 10-6K-1), homogeneous fluorescent glass slurry 35 is prepared into finally by magnetic agitation 30min.
3) it is 80 μm of fluorescent glass slurries 35 using coating a layer thickness on matrix 34 is screen printed onto, passes through and control silk screen
The spacing of halftone 36 and matrix 34 and the angle of scraper 37 adjust print thickness uniformity；
4) LED wafer for being coated with pulp layer is placed in high temperature furnace, is risen to 500 DEG C by room temperature, is protected under nitrogen atmosphere
Temperature sintering 50min, then anneal at 250 DEG C 60min, room temperature is finally cooled to the furnace, to obtain thickness on matrix 34
Uniform fluorescent glass layer 38；
5) fluorescent glass piece is thinned, polishing treatment, fluorescent glass piece is after processing with a thickness of 150 μm, rough surface
Degree is 20nm.
Step 3, use spin coating method in fluorescent glass piece surface spin coating a layer thickness for 50 μm of silicone adhesive layer 39, so
Fluorescent glass on piece layer of silica gel is bonded with the Sapphire Substrate 31 of LED wafer afterwards, and solidifies 60min at 150 DEG C,
It is bonded with completing fluorescent glass piece with the gluing between LED wafer；
Step 4, the LED wafer for being bonded with fluorescent glass piece is subjected to cutting splitting using laser cutting machine, obtained single
Directly White-light LED chip 40.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (10)
1. a kind of direct White-light LED chip manufacturing method for having high thermal stability, which is characterized in that this method includes following step
It is rapid:
(a) procedure of processing of epitaxial wafer
In the front of Sapphire Substrate, LED epitaxial wafer is obtained by the way of epitaxial growth；
(b) preparation of fluorescent glass slurry and coating step
At the back side of the Sapphire Substrate, the uniform fluorescent glass slurry of a layer thickness, the component of the fluorescent glass slurry are coated
Set as follows: fluorescent powder selects embedded photoluminescent material and its volume is the 10%~60% of slurry total weight, and glass powder selects glass
Low melting point glass material of the glass transition temperature lower than 500 DEG C and its volume are the 15%~70% of slurry total weight, binder
Be selected as the mixture of ethyl cellulose and terpinol, and its volume be respectively slurry total weight 1%~5% and 15%~
40%；
(c) sintering step of fluorescent glass layer
Will by step (b) be coated with fluorescent glass slurry LED epitaxial wafer be placed in high temperature furnace, by room temperature rise to 300 DEG C~
600 DEG C, then heat preservation sintering 10min~60min under air environment cools to room temperature with the furnace, thus in the back of Sapphire Substrate
Face forms fluorescent glass layer in homogeneous thickness；
(d) forming step of LED chip
Electrode and pad are made in the LED epitaxial wafer for being formed with fluorescent glass layer by step (c), and to the fluorescent glass
Layer is processed by shot blasting that then cutting obtains multiple single direct White-light LED chips, thus after being thinned to 50 μm~120 μm
Complete whole manufacturing process.
2. directly White-light LED chip manufacturing method as described in claim 1, which is characterized in that in step (b), preferably adopt
The fluorescent glass slurry is coated with the mode of silk-screen printing, and passes through control screen mesh printing plate and the Sapphire Substrate
Spacing and the angle of scraper adjust the thickness uniformity.
3. directly White-light LED chip manufacturing method as claimed in claim 1 or 2, which is characterized in that for the fluorescent glass
For slurry, wherein one of preferably following substance of the fluorescent powder or combination: yellow fluorescent powder, green emitting phosphor, blue are glimmering
Light powder, red fluorescence powder and quanta point material；The low melting point glass material is preferably that molecular formula is TeO2-B2O3-ZnO-Na2O
Tellurate glass powder, and its refractive index is set to 1.5~2.1.
4. direct White-light LED chip manufacturing method as claimed in any one of claims 1-3, which is characterized in that in step (d)
In, the fluorescent glass layer is preferably thinned to 80 μm or so of thickness, and the surface roughness after polishing is 50nm or less.
5. a kind of direct White-light LED chip manufacturing method for having high thermal stability, which is characterized in that this method includes following step
It is rapid:
(i) procedure of processing of circular wafer
In the front of Sapphire Substrate, LED epitaxial wafer is obtained by the way of epitaxial growth；Then, it is made in the LED epitaxial wafer
Electrode and pad, thus to obtain LED circular wafer；
(ii) procedure of processing of fluorescent glass piece
Monocrystalline sapphire is chosen as matrix, the uniform fluorescent glass slurry of a layer thickness is then coated on the matrix, this is glimmering
The component of light glass paste sets as follows: fluorescent powder select embedded photoluminescent material and its volume as slurry total weight 10%~
60%, glass powder selects low melting point glass material of the glass transition temperature lower than 600 DEG C and its volume is slurry total weight
15%~70%, binder is selected as the mixture of ethyl cellulose and terpinol, and its volume is respectively slurry total weight
1%~5% and 15%~40%；
(iii) sintering step of fluorescent glass piece
The matrix for being coated with fluorescent glass slurry by step (ii) is placed in high temperature furnace, rises to 500~650 DEG C by room temperature,
Heat preservation sintering 20min~60min under nitrogen atmosphere, then 300 DEG C~350 DEG C at a temperature of anneal 30min or more, finally with
Furnace is cooled to room temperature, and thus forms fluorescent glass piece in homogeneous thickness on the matrix；Then, to being formed with the fluorescence glass
The matrix of glass piece be processed by shot blasting after being thinned to 100 μm~300 μm；
(iv) bonding steps of matrix and circular wafer
It will be bonded by step (iii) treated matrix with the LED circular wafer, then para-linkage has fluorescent glass piece
LED circular wafer carry out cutting splitting, obtain single direct White-light LED chip, thus complete whole manufacturing process.
6. direct White-light LED chip manufacturing method as claimed in claim, which is characterized in that in step (ii), preferably adopt
The fluorescent glass slurry is coated with the mode of silk-screen printing, and passes through control screen mesh printing plate and the Sapphire Substrate
Spacing and the angle of scraper adjust the thickness uniformity.
7. such as direct White-light LED chip manufacturing method described in claim 5 or 6, which is characterized in that for the fluorescent glass
For slurry, wherein one of preferably following substance of the fluorescent powder or combination: yellow fluorescent powder, green emitting phosphor, blue are glimmering
Light powder, red fluorescence powder and quanta point material；The low melting point glass material is preferably the SiO that molecular formula is2-B2O3- ZnO's
Borosilicate glass powder, and its refractive index is set to 1.5~1.8.
8. directly White-light LED chip manufacturing method as claimed in claim 7, which is characterized in that described in step (iii)
Fluorescent glass layer is preferably thinned to 150 μm or so of thickness, and the surface roughness after polishing is 5~20nm.
9. the direct White-light LED chip manufacturing method as described in claim 5-8 any one, which is characterized in that in step
(iv) in, it is preferred to use surface plasma activated bond technique executes the bonding process, and process is as follows:
It is cleaned by ultrasonic the fluorescent glass piece and LED wafer first with acetone, ethyl alcohol and deionized water, then dries standby
With；Bombard the surface of described matrix and the surface of the Sapphire Substrate respectively using plasma, realize surface cleaning and
Activation；Then, the Direct Bonding of described matrix Yu the Sapphire Substrate is completed in vacuum environment using bonder.
10. the direct White-light LED chip manufacturing method as described in claim 5-8 any one, which is characterized in that in step
(iv) in, it is preferred to use spin coating proceeding executes the bonding process, and process is as follows: being revolved first in the fluorescent glass on piece
Apply the uniform silicone adhesive layer of a layer thickness, then by the silicone adhesive layer of the fluorescent glass on piece and the Sapphire Substrate into
Row fitting, and in 150~200 DEG C of at a temperature of solidification 60min or more, it thus completes the fluorescent glass piece and the LED is brilliant
Gluing bonding between disk.
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