CN110246952A - A kind of LED wafer color-changing device - Google Patents
A kind of LED wafer color-changing device Download PDFInfo
- Publication number
- CN110246952A CN110246952A CN201910383338.2A CN201910383338A CN110246952A CN 110246952 A CN110246952 A CN 110246952A CN 201910383338 A CN201910383338 A CN 201910383338A CN 110246952 A CN110246952 A CN 110246952A
- Authority
- CN
- China
- Prior art keywords
- resistant layer
- led wafer
- transparent heat
- changing device
- blue light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000843 powder Substances 0.000 claims abstract description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 230000004907 flux Effects 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000741 silica gel Substances 0.000 description 5
- 229910002027 silica gel Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention discloses a kind of LED wafer color-changing device, and including the phosphor powder layer that transparent heat-resistant layer and sintering are formed on transparent heat-resistant layer outer surface, the inner surface side of the transparent heat-resistant layer corresponds to blue light chip and forms gap between blue light chip.Compared with prior art, the present invention is needing so to ensure that made LED product can be with the work of duration in application, heat caused by high luminous flux can't have any impact to LED product is formed by relatively high power LED wafer.
Description
Technical field
The present invention relates to LED fields, and in particular to be a kind of LED wafer color-changing device.
Background technique
Based on cost and it is resistance to decaying etc. the reason of, blue light chip is the chip that LED field is most widely used in the market,
It is in general all before blue light chip to realize the light for externally issuing white light, green light, feux rouges or various other various kinds
Rectangular at an encapsulated layer, the encapsulated layer is mixed by silica gel and fluorescent powder, and the fluorescent powder is according to current production institute
It needs color and carries out compatibility design, the blue light so issued by blue light chip is by that can form practical institute after encapsulated layer
The light of color is needed, the demand so that routine for meeting various colors shines.
But since the encapsulated layer that silica gel and fluorescent powder are mixed to form needs that light caused by blue light chip is allowed to pass through, then
Binding silica gel itself has poor heat resistance, and for the blue light chip of relatively high power, forming larger luminous flux can directly be made
It generates heat and damages at encapsulated layer, so that the packaged type of conventional silica gel and fluorescent powder can not apply the LED wafer in relatively high power
On, puzzlement so is brought to actual product design, in view of this, the applicant furthers investigate regarding to the issue above, there is this then
Case generates.
Summary of the invention
The main purpose of the present invention is to provide a kind of LED wafer color-changing devices, to solve to use blue light in the prior art
Chip is as luminescent wafer, then carries out to be easy that silica gel packaging layer damage occurs because luminous flux is larger during discoloration processing
Bad problem.
In order to achieve the above objectives, solution of the invention is:
A kind of LED wafer color-changing device, wherein be formed in transparent heat-resistant layer outer surface including transparent heat-resistant layer and sintering
On phosphor powder layer, the inner surface side of the transparent heat-resistant layer corresponds to blue light chip and forms gap between blue light chip.
Further, the fluorescent powder in the phosphor powder layer is red fluorescence powder or green emitting phosphor.
Further, the color-changing device further includes the support base positioned at LED wafer lateral edge, and the transparent heat-resistant layer is mounted on
On support base and allows between transparent heat-resistant layer lower surface and blue light chip and be formed with gap.
Further, the transparent heat-resistant layer is sapphire glass.
After adopting the above structure, the present invention relates to a kind of LED wafer color-changing devices, since it is made using transparent heat-resistant layer
For base material, have the characteristics that translucency is good and heat resistance is good, thus when needs are answered in relatively high power LED wafer
Used time, heat caused by high luminous flux can't have any impact to product, so ensure that made LED product can
With the work of duration.
Detailed description of the invention
Fig. 1 is that the present invention relates to a kind of structural schematic diagrams of LED wafer color-changing device.
The schematic diagram that Fig. 2 cooperates between color-changing device of the present invention and LED wafer.
In figure:
Transparent heat-resistant layer -1；Phosphor powder layer -2；Blue light chip -3；
Support base -4；Substrate -6.
Specific embodiment
In order to further explain the technical solution of the present invention, being explained in detail below by specific embodiment the present invention
It states.
As shown in Figure 1, a kind of LED wafer color-changing device of the present invention, including transparent heat-resistant layer 1 and sintering are formed
Phosphor powder layer 2 on transparent 1 outer surface of heat-resistant layer, the inner surface side of the transparent heat-resistant layer 1 correspond to blue light chip 3 and with
Gap H is formed between blue light chip 3.It should be noted that the outer surface of the transparent heat-resistant layer 1 refers to backwards to blue light chip 3
Side, the inner surface refers to the side towards blue light chip 3.
In the present embodiment, the fluorescent powder in the phosphor powder layer 2 is red fluorescence powder or green emitting phosphor；It certainly can also
Think the fluorescent powder of other colors, it is not limited here, is selected with specific reference to actual needs.
As shown in Fig. 2, the color-changing device further includes the support positioned at LED wafer lateral edge as a kind of specific embodiment
Seat 4, the transparent heat-resistant layer 1 is mounted on support base 4 and allows between transparent 1 lower surface of heat-resistant layer and blue light chip 3 and is formed with
Gap H.The support base 4 can only play the role of support, can also play heat dissipation simultaneously, for example use copper base
To realize；LED wafer described in figure is blue light chip, is provided with substrate 6 below.
As a kind of specific choice of the invention, the transparent heat-resistant layer 1 be sapphire glass, simultaneously have it is transparent with
And two characteristics of heatproof.
It is the problem of due to above structure of the present invention and unresolved sealing, so shown referring to figure 2., it is to use outside again
The mode of glass lens is added to solve, directly this block does not solve temporarily in color-changing device.
To sum up, the present invention relates to a kind of LED wafer color-changing devices, since it is to be used as substrate material using transparent heat-resistant layer 1
Material, have the characteristics that translucency is good and heat resistance is good, thus when need in relatively high power LED wafer in application, height
Luminous flux caused by heat can't have any impact to product, so ensure that made LED product can continue
The work of property.
Above-described embodiment and schema and non-limiting product form and style of the invention, any technical field it is common
The appropriate changes or modifications that technical staff does it all should be regarded as not departing from patent category of the invention.
Claims (4)
1. a kind of LED wafer color-changing device, which is characterized in that be formed in outside transparent heat-resistant layer including transparent heat-resistant layer and sintering
Phosphor powder layer on surface, between the inner surface side of the transparent heat-resistant layer corresponds to blue light chip and formed between blue light chip
Gap.
2. a kind of LED wafer color-changing device as described in claim 1, which is characterized in that the fluorescent powder in the phosphor powder layer
For red fluorescence powder or green emitting phosphor.
3. a kind of LED wafer color-changing device as described in claim 1, which is characterized in that the color-changing device further includes being located at
The support base of LED wafer lateral edge, the transparent heat-resistant layer are mounted on support base and make transparent heat-resistant layer lower surface and blue light brilliant
Gap is formed between piece.
4. a kind of LED wafer color-changing device as described in claim 1, which is characterized in that the transparent heat-resistant layer is sapphire
Glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910383338.2A CN110246952A (en) | 2019-05-08 | 2019-05-08 | A kind of LED wafer color-changing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910383338.2A CN110246952A (en) | 2019-05-08 | 2019-05-08 | A kind of LED wafer color-changing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110246952A true CN110246952A (en) | 2019-09-17 |
Family
ID=67883853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910383338.2A Pending CN110246952A (en) | 2019-05-08 | 2019-05-08 | A kind of LED wafer color-changing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110246952A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169235A (en) * | 2007-09-05 | 2008-04-30 | 昌鑫光电（东莞）有限公司 | White light LED with modified structure |
| CN101629707A (en) * | 2009-08-05 | 2010-01-20 | 深圳雷曼光电科技有限公司 | LED lamp and encapsulating method thereof |
| KR20130070043A (en) * | 2011-12-19 | 2013-06-27 | 엘지디스플레이 주식회사 | Light emitting diode and liquid crystal display device using the same |
| CN203746900U (en) * | 2014-01-29 | 2014-07-30 | 中山市宏晟祥光电照明科技有限公司 | White light LED |
| CN109545910A (en) * | 2018-10-10 | 2019-03-29 | 华中科技大学 | A kind of direct White-light LED chip manufacturing method having high thermal stability |
| CN209766471U (en) * | 2019-05-08 | 2019-12-10 | 格瑞电子（厦门）有限公司 | LED wafer color changing device |
-
2019
- 2019-05-08 CN CN201910383338.2A patent/CN110246952A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101169235A (en) * | 2007-09-05 | 2008-04-30 | 昌鑫光电（东莞）有限公司 | White light LED with modified structure |
| CN101629707A (en) * | 2009-08-05 | 2010-01-20 | 深圳雷曼光电科技有限公司 | LED lamp and encapsulating method thereof |
| KR20130070043A (en) * | 2011-12-19 | 2013-06-27 | 엘지디스플레이 주식회사 | Light emitting diode and liquid crystal display device using the same |
| CN203746900U (en) * | 2014-01-29 | 2014-07-30 | 中山市宏晟祥光电照明科技有限公司 | White light LED |
| CN109545910A (en) * | 2018-10-10 | 2019-03-29 | 华中科技大学 | A kind of direct White-light LED chip manufacturing method having high thermal stability |
| CN209766471U (en) * | 2019-05-08 | 2019-12-10 | 格瑞电子（厦门）有限公司 | LED wafer color changing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101395432B1 (en) | White led device | |
| TWI458139B (en) | White light emitting diode module | |
| US9923126B2 (en) | Light emitting device having high color rendering using three phosphor types | |
| TWI509844B (en) | Applied to the backlight of the LED light-emitting structure | |
| WO2011129429A1 (en) | Led light-emitting device | |
| CN204361094U (en) | Light-emitting device | |
| CN204067334U (en) | Photoelectric semiconductor's lamp strip structure | |
| TW201010125A (en) | White light light-emitting diodes | |
| US20150349211A1 (en) | Led light source packaging method, led light source package structure and light source module | |
| TW201143160A (en) | Light-emitting device | |
| CN104393145A (en) | Ceramic-substrate-contained white-light LED with low thermal resistance and high brightness | |
| CN105355760A (en) | Light emitting diode (LED) device characterized by wide color gamut display | |
| WO2014040412A1 (en) | Led packaging structure | |
| CN112608750A (en) | Full-spectrum LED fluorescent powder composition and full-spectrum white LED device | |
| CN109256458A (en) | A kind of LED product encapsulating structure and its packaging method | |
| CN207421802U (en) | A kind of high-power multicolored COB light source | |
| CN203218325U (en) | Mixed light LED structure | |
| CN110246952A (en) | A kind of LED wafer color-changing device | |
| CN102709280A (en) | Chip on board (COB) integrated light source module | |
| CN209766471U (en) | LED wafer color changing device | |
| CN209045605U (en) | A kind of red white double-colored instruction type LED light sources encapsulating structure | |
| CN108281533A (en) | A kind of color temperature-tunable LED packagings and its application method | |
| CN202855796U (en) | Transparent ceramic white light LED packaging structure | |
| CN206412359U (en) | White light LEDs module chip and white light LEDs module | |
| CN204991761U (en) | Anti high temperature fluorescent screen LED light source |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |