CN101169235A - White light LED with modified structure - Google Patents

White light LED with modified structure Download PDF

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Publication number
CN101169235A
CN101169235A CNA2007100300612A CN200710030061A CN101169235A CN 101169235 A CN101169235 A CN 101169235A CN A2007100300612 A CNA2007100300612 A CN A2007100300612A CN 200710030061 A CN200710030061 A CN 200710030061A CN 101169235 A CN101169235 A CN 101169235A
Authority
CN
China
Prior art keywords
led
wafer
lens cap
white light
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007100300612A
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Chinese (zh)
Inventor
邹本壮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHANGXIN OPTO-ELECTRONIC (DONGGUAN) Co Ltd
Original Assignee
CHANGXIN OPTO-ELECTRONIC (DONGGUAN) Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHANGXIN OPTO-ELECTRONIC (DONGGUAN) Co Ltd filed Critical CHANGXIN OPTO-ELECTRONIC (DONGGUAN) Co Ltd
Priority to CNA2007100300612A priority Critical patent/CN101169235A/en
Publication of CN101169235A publication Critical patent/CN101169235A/en
Pending legal-status Critical Current

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Abstract

The invention relates to the technical field of LED, namely, a structure-improved white light LED. Positive and negative electrodes of a LED wafer are respectively led out by leads and extended to be connected with a leading pin or a frame out of a lens shield which shades the wafer. The invention is characterized in that at least one wafer is fixed on a cup-shaped groove or platform on a base or the frame. The external surface of the wafer is provided with light permeable and heat insulating medium, wherein, the external surface of the medium or the lens shield is coated with a layer of fluorescent powder. The invention has the advantages that the fluorescent powder is separated from the wafer, so as to prevent the fluorescent powder from blackening caused by thermal aging and carbonization, stabilize the color temperature and lighting strength and improve the optical efficiency by 16 to 36 percent. After aging test of 5000 hours, the luminous flux of the product is more than 90 percent of the original luminous flux, so that the invention can be used for producing various lamps such as serial LED lamps, LED signal lamps, LED indicating lamps and LED decorative lamps.

Description

Structure improved white light emitting diode
Technical field:
The present invention relates to light emitting diode (LED) technical field, refer in particular to a kind of structure improved white light emitting diode.
Background technology:
Light emitting diode (LED) is a kind of semiconductor solid luminescence device, it is to utilize the solid semiconductor wafer as luminescent material, when two ends add forward voltage, carrier in the semiconductor takes place compoundly to cause photo emissions and produce light, be the most popular current light source technology, the characteristics of led light source are: energy-conservation: consumed energy reduces 80% with the incandescent lamp of light efficiency; Use low-tension supply (between 6-24V), security is good; Volume is little, can be prepared into the device of different shape; Life-span is long; Response time is fast: the response time of incandescent lamp is a Millisecond, and the response time of LED lamp is a nanosecond; No poisonous metal mercury is to pollution of environment etc., and along with the Application and Development of high-powered LED lamp, the LED lamp has developed from the direction of spot light to functional illumination, and development prospect is incomparably wide.
Yet, find that from application practice the LED lamp of producing, particularly white LED lamp has it significantly not enough at present both at home and abroad:
Prior art 1: as shown in Figure 1, this LED lamp is by the down-lead bracket 01 of two legs formula and be located at wafer 02 in the support bowl cup, fluorescent material 03 on the cover wafers 02 and the epoxy resin 04 of encapsulated wafer 02 and form, when its shortcoming is epoxy resin 04 encapsulation wafer 02 and fluorescent material 03 seamless unoccupied place are coated, the light and heat that wafer 02 sends makes fluorescent material 03 accelerated ageing, the abundant encapsulation of epoxy resin makes the radiating effect variation of LED, the heat-sinking capability deficiency of the down-lead bracket 01 of two legs formula all causes the light efficiency of LED and the reduction in life-span in addition.
Prior art 2: at the deficiency of the said goods, 200620015677.3 number Chinese patent (referring to Fig. 2) has carried out useful improvement to the LED lamp, this LED product is that column substrate 2 is provided with bowl cup 3, in bowl cup 3, be provided with wafer 4, outer surface at wafer 4 scribbles layer of fluorescent powder 5, lens cap 7 sealing covers of the anti-ultraviolet hollow of substrate 2 usefulness, in the cavity of lens cap 7, be filled with inert gas 8, the both positive and negative polarity of wafer 4 is drawn with lead-in wire 6 respectively and is connected with lead foot 1 outside extending to lens cap 7, this structure is because column substrate 2, the thermal conductivity of lead foot 1 and inert gas 8, wafer 4 temperature is on every side decreased, but, find after deliberation, this structure directly contacts with fluorescent material 5 owing to wafer 4, fluorescent material 5 directly is heated, cause the aging rapidly easily and carbonization blackout of fluorescent material 5, the blue light that the blue light wafer is sent combines the white light that generates and produces the luminous flux reduction at short notice with fluorescent material 5, optical attenuation significantly, colour temperature changes, until dead lamp is that the phenomenon that the LED lamp is scrapped happens occasionally, therefore, has only the environment temperature that reduces fluorescent material, just can prevent the aging of fluorescent material and carbonization blackout, keep colour temperature not change, further prolong the working life of LED lamp, improve the light efficiency of LED lamp.
Summary of the invention:
The objective of the invention is to manage to make fluorescent material directly not contact with wafer, a kind of environment temperature that can further fall fluorescent material is provided, the colour temperature of keeping the LED lamp does not change, and prolongs the working life of LED lamp, improves the structure improved white light emitting diode that LED light is imitated.
The present invention is achieved in that structure improved white light emitting diode, be respectively with drawing and being connected with the positive and negative electrode on the LED wafer with lead foot or support outside extending to lens cap, lens cap can cover wafer, on at least one glass type groove on pedestal or the support or platform, be fixed with at least one wafer, it is characterized in that outer surface at wafer is provided with printing opacity, heat insulation medium, the outer surface or the lens cap of medium are provided with layer of fluorescent powder.
Above-mentioned wafer is the blue light wafer.
The material that above-mentioned medium is selected for use is heat insulation, printing opacity, anti-ultraviolet optical glass or optical plastic or silica gel or epoxy resin or ceramic material.
Above-mentioned fluorescent material is provided with and is meant in the interlayer that is arranged on lens cap on the lens cap or the outer surface of the inner surface of lens cap or lens cap or be blended in the material of making lens cap.
Above-mentioned substrate is made with PCB base or copper base or aluminium base or iron.
Can be provided with cavity between above-mentioned lens cap and the medium, in cavity, be filled with the inert gas of one of nitrogen, helium, neon, argon gas, xenon.
Above-mentioned lens cap is circle or ellipse or semicircle or planar shaped or square or honeycomb hexagon with anti-ultraviolet optical glass or optical plastic or resin or silica gel or epoxy resin or ceramic material, the profile of lens cap.
The purposes of structure improved white light emitting diode can be used for manufacturing LED illuminating lamp, LED signal lamp, LED light, LED ornament lamp, LED lamp band, LED Lamp cup, LED electricity-saving lamp, LED underground lamp, LED clearance light, LED Projecting Lamp.
The outstanding compared to existing technology advantage of the present invention is:
1, the luminous intensity of LED lamp and colour temperature are stable: because the present invention moves outside the position of fluorescent material 31 is around the wafer 20, and fluorescent material 31 and wafer 20 are kept apart with medium 30, because the thermal insulation of medium 30, make wafer 20 because the luminous heat major part that inspires is taken away by metal base 10, small part is walked by light belt, formed fluorescent material 31 good environment temperature on every side, fluorescent material just should not wear out and the carbonization blackout, keep colour temperature not change, make the luminous intensity of LED lamp and colour temperature stable.
2, prolong service life of the present invention: because the environment temperature of the fluorescent material among the present invention improves, be difficult for making fluorescent material 5 to be heated and cause aging rapidly and the carbonization blackout, thereby prolonged the working life of LED lamp, through verification experimental verification, the LED lamp after wearing out in 5000 hours, and the luminous flux of prior art 1 only has 10% of initial luminous flux, and the luminous flux of prior art 2 is 85% of an initial luminous flux, and luminous flux of the present invention is more than 90% of initial luminous flux, and the working life of LED lamp is prolonged greatly.
Description of drawings:
Fig. 3 is the structural representation of the utility model embodiment 1;
Fig. 4 is the structural representation of the utility model embodiment 2;
Fig. 5 is the schematic top plan view of the utility model embodiment 3;
Fig. 6 is that the A-A of Fig. 5 is to cutaway view;
Fig. 7 is the structural representation of the utility model embodiment 4;
Fig. 8 is the schematic top plan view of the utility model embodiment 4.
The specific embodiment:
With specific embodiment the present invention is further described below:
Embodiment 1: referring to Fig. 3: structure improved white light emitting diode, be the positive and negative electrode on the LED wafer 20 is drawn with lead-in wire 21 respectively and to be connected with lead foot 22 outside extending to lens cap 40, lens cap 40 can cover wafer 20, on at least one glass type groove on the pedestal 10 or platform 11, be fixed with at least one wafer 20, be provided with printing opacity, heat insulation medium 30 at the outer surface of wafer 20, the outer surface of medium 30 is provided with layer of fluorescent powder 31.
Above-mentioned wafer 20 is the blue light wafer.
The material that above-mentioned medium 30 is selected for use is heat insulation, printing opacity, anti-ultraviolet optical glass or optical plastic or silica gel or epoxy resin or ceramic material.
Above-mentioned fluorescent material 31 is arranged on the outer surface of medium 30.
Above-mentioned substrate 10 usefulness PCB bases or copper base or aluminium base or iron are made.
Can be provided with cavity 32 between above-mentioned lens cap 40 and the medium 30, also cavity 32 can be set, when being provided with cavity 32, in cavity 32, be filled with the inert gas of one of nitrogen, helium, neon, argon gas, xenon.
Above-mentioned lens cap 40 is that the profile of lens cap 40 is circle or ellipse or semicircle or planar shaped or square or honeycomb hexagon with anti-ultraviolet optical glass or optical plastic or resin or silica gel or epoxy resin or ceramic material.
Embodiment 2: referring to Fig. 4: basic structure is with embodiment 1, be that above-mentioned layer of fluorescent powder 31 is arranged on the lens cap 40, promptly be arranged in the interlayer of lens cap 40, certainly, above-mentioned fluorescent material 31 also can be arranged on the outer surface of the inner surface of lens cap 40,41 or lens cap 40,41 or be blended in the material of making lens cap 40,41.
Embodiment 3: referring to Fig. 5-6: the pedestal 10 of employing, wafer 20, cup type groove or platform 11, medium 30, inert gas 32, lead-in wire 21 and lead foot 22 are basic identical with embodiment 1 or embodiment 2, just a plurality of LED lamp assemblies are installed in the metal case 50, lens cap 41 cappings on plane of the top of box body 50, in the interlayer of lens cap 41, be provided with layer of fluorescent powder 31, certainly, also can be as embodiment 1 and embodiment 2, fluorescent material 31 is arranged on the outer surface of the inner surface of the outer surface of medium 30 or lens cap 41 or lens cap 41 or is blended in the material of making lens cap 41, just, negative electrode is drawn with lead-in wire 21 respectively and is connected in series with lead foot 22 respectively, certainly, the demand of the quantity of LED how many visual intensities of illumination and designing, because fluorescent material 31 is by medium 30 heat insulation and heat-dissipating space increasings, the good heat dissipation effect of metal case 50, make the stability of LED improve, light efficiency increases, ILS, evidence, the environment temperature of fluorescent material 31 is low more, its working environment is just good more, light efficiency is just big more, and the life-span is just long more.
Embodiment 4: referring to Fig. 7-8: wafer 20 is fixed on the cup type groove or platform 11 on the support 23, with on the LED wafer 20 just, negative electrode is drawn with lead-in wire 21 respectively and is connected with support 23 outside extending to lens cap 40, outer surface at wafer 20 is provided with printing opacity, heat insulation medium 30, outer surface at medium 30 is provided with layer of fluorescent powder 31, the top of support 23, and wafer 20, medium 30, fluorescent material 31 all covers with lens cap 40, certainly, also can be provided with cavity between fluorescent material 31 and the lens cap 40, when cavity is arranged, can in cavity, fill nitrogen, helium, neon, argon gas, the inert gas of one of xenon, above-mentioned wafer 20, medium 30, fluorescent material 31, lens cap 40 is substantially the same manner as Example 1.
The purposes of structure improved white light emitting diode, can be used for making various luminous class light fixtures such as serial LED illuminating lamp, LED signal lamp, LED light, LED ornament lamp, LED lamp band, LED Lamp cup, LED electricity-saving lamp, LED underground lamp, LED clearance light, LED Projecting Lamp, can utilize the pin and the external structure of existing light fixture during making, the connection location is gone up structure of the present invention and is got final product, also can redesign and make new-type fitting structure, to adapt to people's different demands.

Claims (8)

1. structure improved white light emitting diode, be with on the LED wafer (20) just, negative electrode respectively with the lead-in wire (21) draw and with extend to lens cap (40,41) lead foot outside (22) or support (23) connect, lens cap (40,41) can cover wafer (20), on at least one glass type groove on pedestal (10) or the support (23) or platform (11), be fixed with at least one wafer (20), it is characterized in that being provided with printing opacity at the outer surface of wafer (20), heat insulation medium (30) is at the outer surface or the lens cap (40 of medium (30), 41) be provided with layer of fluorescent powder (31).
2. structure improved white light emitting diode according to claim 1 is characterized in that described wafer (20) is the blue light wafer.
3. structure improved white light emitting diode according to claim 1 is characterized in that material that described medium (30) is selected for use is heat insulation, printing opacity, anti-ultraviolet optical glass or optical plastic or silica gel or epoxy resin or ceramic material.
4. structure improved white light emitting diode according to claim 1 is characterized in that described fluorescent material (31) is provided with to be meant in the interlayer that is arranged on lens cap (40,41) on the lens cap (40,41) or the outer surface of the inner surface of lens cap (40,41) or lens cap (40,41) or be blended in the material of making lens cap (40,41).
5. structure improved white light emitting diode according to claim 1 is characterized in that described substrate (10) makes with PCB base or copper base or aluminium base or iron.
6. structure improved white light emitting diode according to claim 1, it is characterized in that to be provided with cavity (32) between described lens cap (40,41) and the medium (30), in cavity (32), be filled with the inert gas of one of nitrogen, helium, neon, argon gas, xenon.
7. structure improved white light emitting diode according to claim 1, it is characterized in that described lens cap (40,41) is that the profile of lens cap (40,41) is circle or ellipse or semicircle or planar shaped or square or honeycomb hexagon with anti-ultraviolet optical glass or optical plastic or resin or silica gel or epoxy resin or ceramic material.
8. the purposes of structure improved white light emitting diode is characterized in that can be used for manufacturing LED illuminating lamp, LED signal lamp, LED light, LED ornament lamp, LED lamp band, LED Lamp cup, LED electricity-saving lamp, LED underground lamp, LED clearance light, LED Projecting Lamp.
CNA2007100300612A 2007-09-05 2007-09-05 White light LED with modified structure Pending CN101169235A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNA2007100300612A CN101169235A (en) 2007-09-05 2007-09-05 White light LED with modified structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNA2007100300612A CN101169235A (en) 2007-09-05 2007-09-05 White light LED with modified structure

Publications (1)

Publication Number Publication Date
CN101169235A true CN101169235A (en) 2008-04-30

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011079474A1 (en) * 2009-12-31 2011-07-07 海洋王照明科技股份有限公司 White light luminescent device based on purple light leds
CN102588813A (en) * 2011-01-18 2012-07-18 鸿富锦精密工业(深圳)有限公司 Light-emitting diode light bar and manufacturing method for same
CN102637807A (en) * 2012-04-16 2012-08-15 江苏亿光电子科技有限公司 Improved white light LED (Light Emitting Diode) device
CN102800797A (en) * 2011-05-24 2012-11-28 台湾积体电路制造股份有限公司 Batwing led with remote phosphor configuration
WO2013078574A1 (en) * 2011-12-02 2013-06-06 海立尔股份有限公司 Ultraviolet led nail lamp structure and led light source module thereof
WO2013152520A1 (en) * 2012-04-11 2013-10-17 深圳市华星光电技术有限公司 Led backlight source
CN106402684A (en) * 2016-10-25 2017-02-15 西安交通大学 Heat transfer mixed gas filled in LED lamp

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011079474A1 (en) * 2009-12-31 2011-07-07 海洋王照明科技股份有限公司 White light luminescent device based on purple light leds
CN102687266B (en) * 2009-12-31 2015-11-25 海洋王照明科技股份有限公司 Based on the white light emitting device of purple LED
CN102588813A (en) * 2011-01-18 2012-07-18 鸿富锦精密工业(深圳)有限公司 Light-emitting diode light bar and manufacturing method for same
CN102800797A (en) * 2011-05-24 2012-11-28 台湾积体电路制造股份有限公司 Batwing led with remote phosphor configuration
CN102800797B (en) * 2011-05-24 2015-01-14 台湾积体电路制造股份有限公司 Batwing led with remote phosphor configuration
WO2013078574A1 (en) * 2011-12-02 2013-06-06 海立尔股份有限公司 Ultraviolet led nail lamp structure and led light source module thereof
WO2013152520A1 (en) * 2012-04-11 2013-10-17 深圳市华星光电技术有限公司 Led backlight source
CN102637807A (en) * 2012-04-16 2012-08-15 江苏亿光电子科技有限公司 Improved white light LED (Light Emitting Diode) device
CN106402684A (en) * 2016-10-25 2017-02-15 西安交通大学 Heat transfer mixed gas filled in LED lamp

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Open date: 20080430