CN205231111U - White light semiconductor lighting lamps and lanterns - Google Patents

White light semiconductor lighting lamps and lanterns Download PDF

Info

Publication number
CN205231111U
CN205231111U CN201521127636.9U CN201521127636U CN205231111U CN 205231111 U CN205231111 U CN 205231111U CN 201521127636 U CN201521127636 U CN 201521127636U CN 205231111 U CN205231111 U CN 205231111U
Authority
CN
China
Prior art keywords
lamp shade
semiconductor lighting
white
transparent lamp
lighting according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201521127636.9U
Other languages
Chinese (zh)
Inventor
王峰
赵海琴
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Ruiermei Optoelectronic Technology Co Ltd
Original Assignee
Suzhou Ruiermei Optoelectronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suzhou Ruiermei Optoelectronic Technology Co Ltd filed Critical Suzhou Ruiermei Optoelectronic Technology Co Ltd
Priority to CN201521127636.9U priority Critical patent/CN205231111U/en
Application granted granted Critical
Publication of CN205231111U publication Critical patent/CN205231111U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

(B, ) the utility model discloses a white light semiconductor lighting lamps and lanterns, it includes reflection light condensation cover, set up radiating basal plate in the reflection light condensation cover, an integrated at least semiconductor luminescence chip and positive and negative electrode wiring solder joint, cover on radiating basal plate is established on radiating basal plate and transparent cover that outer fringe that outer fringe and reflection light condensation cover is connected, transparent cover is last to have the phosphor powder that has yellow composition. The utility model discloses white light semiconductor lighting lamps and lanterns simple manufacture, blue light semiconductor luminescence chip device and the lamp shade that has yellow composition phosphor powder become split state, if the phosphor powder aged deterioration has appeared in bad fall to die lamp phenomenon or the lamp shade in the tube core, can the components of a whole that can function independently pull down the maintenance and change, be convenient for follow -up maintenance with reduce cost of maintenance. The utility model discloses white light that the method was made illumination lamps and lanterns simple process, the cost of manufacture is low, the radiating effect is good, extensively is applicable to all white lights illumination fields such as indoor lighting, automotive lighting, outdoor lighting. (B, )

Description

White semiconductor lighting
Technical field
the utility model relates to a kind of white semiconductor lighting.
Background technology
in recent years, white semiconductor lighting is employed for the white-light illuminating fields such as room lighting, automotive lighting, outdoor lighting just gradually, because of its there is high efficiency, high brightness, the advantage such as volume is little, long service life, power consumption are low, environmental protection, be expected to replace the conventional illumination sources such as conventional incandescent, fluorescent lamp, Halogen lamp LED, will the high-quality light source of extensive use be become.But, fluorescent material mixture together with silica gel due to current white semiconductor lighting is on the market encapsulated in the chip surface in luminescence chip device, the chip that fluorescent material, silica gel and energising are generated heat afterwards directly contacts, fluorescent material and silica gel is caused to be heated aging ahead of time, simultaneously chip is due to the parcel of silica gel and fluorescent material, thermal resistance becomes large, is unfavorable for the heat radiation of chip, finally causes chip decay ahead of time.Going back Problems existing is in addition once fluorescent material, silica gel, in chip three wherein one there is integrity problem, whole light fixture, with regard to cisco unity malfunction, needs all to change, and adds follow-up working service cost.This traditional manufacture method not only takes a large amount of manpower and materials, makes manufacturing cost and follow-up maintenance cost increase, but also is unfavorable for the raising of properties of product.
Utility model content
in order to solve the problem, the purpose of this utility model is to provide a kind of white semiconductor lighting.
in order to reach above object, the technical solution adopted in the utility model is: a kind of white semiconductor lighting, it comprises reflecting condensation cover, the heat-radiating substrate be arranged in reflecting condensation cover, be integrated at least one semiconductor luminous chip on heat-radiating substrate and positive and negative electrode wiring solder joint, be located on heat-radiating substrate and the Transparent lamp shade that is connected with the outer rim of reflecting condensation cover of outer rim, Transparent lamp shade has the fluorescent material with yellow component.
further, semiconductor luminous chip is GaN base light-emitting diode or GaN base laser diode.
further, the fluorescent material with yellow component is coated on Transparent lamp shade and forms coating.
further, the fluorescent material with yellow component is coated in outside Transparent lamp shade.
further, the fluorescent material with yellow component is coated in inside Transparent lamp shade.
further, the fluorescent material with yellow component is fired in Transparent lamp shade.
further, semiconductor luminous chip is that single or string are or/and many of parallel connection.
further, heat-radiating substrate adopts resin plate, ceramic wafer or metallic plate to make.
further, make with the plastics of reflectance coating or metal material inside the employing of reflecting condensation cover.
further, Transparent lamp shade adopts clear glass or transparent plastic to make.
owing to have employed technique scheme, the utility model white semiconductor lighting, owing to producing blue light excite fluorescent material on Transparent lamp shade by powering up to semiconductor luminous chip integrated on heat-radiating substrate, finally obtain the white light needing colour temperature, section dissipates light excites by the reflection of reflecting condensation cover again, thus final obtained required white-light illuminating light fixture.The utility model white semiconductor lighting makes simple, blue-light semiconductor luminescence chip device becomes split state with the lampshade with yellow component fluorescent material, the fluorescent material aged deterioration in dead lamp phenomenon or lampshade if breaking down appears in tube core, split can pull down maintain and replace, be convenient to follow-up maintenance and reduce maintenance cost.White-light illuminating light fixture technique manufactured by the utility model method is simple, cost of manufacture is low, good heat dissipation effect, is widely used in all white-light illuminating fields such as room lighting, automotive lighting, outdoor lighting.
Accompanying drawing explanation
accompanying drawing 1 is the structural representation of the white semiconductor lighting in the utility model embodiment one;
accompanying drawing 2 is the structural representation of the white semiconductor lighting in the utility model embodiment two;
accompanying drawing 3 is the structural representation of the white semiconductor lighting in the utility model embodiment three.
number in the figure is:
1, semiconductor luminous chip; 2, heat-radiating substrate; 3, metal interconnected circuit layer; 4, upper insulating barrier; 5, pin; 6, pin solder joint; 7, electrode connection solder joint; 8, wiring; 9, driving power; 10, reflecting condensation cover; 11, Transparent lamp shade; 12, coating; 13, lower insulating barrier.
Embodiment
below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, can be easier to be readily appreciated by one skilled in the art to make advantage of the present utility model and feature.
embodiment one
as can be seen from the structural representation of accompanying drawing 1, present embodiments provide a kind of white semiconductor lighting, it comprises reflecting condensation cover 10, the heat-radiating substrate 2 be arranged in reflecting condensation cover 10, be integrated at least one semiconductor luminous chip 1 on heat-radiating substrate 2 and positive and negative electrode wiring solder joint 7, be located on heat-radiating substrate 2 and the Transparent lamp shade 11 that is connected with the outer rim of reflecting condensation cover 10 of outer rim, Transparent lamp shade 11 has the fluorescent material with yellow component.
reflecting condensation cover 10 adopts inner side to make with the plastics of reflectance coating or metal material, and shape can be cup-like shape, bowl-shape shape, channel-shaped shape etc., specifically can carry out the profile of accommodation reflex snoot 10 according to the lighting area of light fixture, indicator.
heat-radiating substrate 2 can adopt resin plate, ceramic wafer or metallic plate to make, and its shape can be bar shaped, circle, polygon etc., is specifically decided by the appearance design of light fixture.Heat-radiating substrate 2 does metal interconnected copper foil circuit, form metal interconnected circuit layer 3, wrapped up by upper insulating barrier 4 and lower insulating barrier 13 respectively above and below metal interconnected circuit layer 3, upper insulating barrier 4 surface design has tin cream pin solder joint window, the pin solder joint 6 of design, for welding the pin 5 of semiconductor luminous chip 1, is connected with metal interconnected circuit layer 3 below pin solder joint 6.Heat-radiating substrate 2 also has electrode connection solder joint 7, and electrode connection solder joint 7 is connected with external drive power supply 9 by wiring 8.The electric current that driving power 9 provides is decided by the quantity of integrated semiconductor luminous chip 1 and power.
semiconductor luminous chip 1 is GaN base light-emitting diode or GaN base laser diode, and the light produced after energising is ultraviolet, near ultraviolet, blue light or green glow, is preferably blue light.Semiconductor luminous chip 1 is that single or string are or/and many of parallel connection.
transparent lamp shade 11 adopts clear glass or transparent plastic to make, and Transparent lamp shade 11 can be arc surfaced or plate shaped.Transparent lamp shade 11 snapping relative to reflecting condensation cover 10, forms the inner space that arranges above-mentioned heat-radiating substrate 2.
the fluorescent material with yellow component is coated on Transparent lamp shade 11 and forms coating 12.Method by automotive lacquer technique sprays, Transparent lamp shade 11 circular plate also by the mode spin coating of spin coating whirl coating, fluorescent material proportioning type selecting determines according to the colour temperature of the light fixture that will obtain, light extraction efficiency.For being coated in outside Transparent lamp shade 11 in the present embodiment.
the utility model white semiconductor lighting, due to by powering up to integrated semiconductor luminous chip 1 on heat-radiating substrate 2 to produce blue light to excite fluorescent material on Transparent lamp shade 11, finally obtain the white light needing colour temperature, section dissipates light reflects by reflecting condensation cover 10 and excites, thus final obtained required white-light illuminating light fixture.
the utility model white semiconductor lighting makes simple, blue-light semiconductor luminescence chip device becomes split state with the lampshade with yellow component fluorescent material, the fluorescent material aged deterioration in dead lamp phenomenon or lampshade if breaking down appears in tube core, split can pull down maintain and replace, be convenient to follow-up maintenance and reduce maintenance cost.White-light illuminating light fixture technique manufactured by the utility model method is simple, cost of manufacture is low, good heat dissipation effect, is widely used in all white-light illuminating fields such as room lighting, automotive lighting, outdoor lighting.
embodiment two
as can be seen from the structural representation of accompanying drawing 2, the white semiconductor lighting in the present embodiment and the difference of embodiment one are only: the fluorescent material with yellow component is coated in inside Transparent lamp shade 11.
embodiment three
as can be seen from the structural representation of accompanying drawing 3, the white semiconductor lighting in the present embodiment and the difference of embodiment one are only: the fluorescent material with yellow component is fired in Transparent lamp shade 11.
above-described embodiment, only for technical conceive of the present utility model and feature are described, its object is to person skilled in the art can be understood content of the present utility model and implement according to this, can not limit protection range of the present utility model with this.All equivalences done according to the utility model Spirit Essence change or modify, and all should be encompassed within protection range of the present utility model.

Claims (10)

1. a white semiconductor lighting, it is characterized in that: it comprises reflecting condensation cover (10), the heat-radiating substrate (2) be arranged in described reflecting condensation cover (10), be integrated at least one semiconductor luminous chip (1) on described heat-radiating substrate (2) and positive and negative electrode wiring solder joint (7), be located at the Transparent lamp shade (11) that the upper and outer rim of described heat-radiating substrate (2) is connected with the outer rim of described reflecting condensation cover (10), (11) have the fluorescent material with yellow component to described Transparent lamp shade.
2. white semiconductor lighting according to claim 1, is characterized in that: described semiconductor luminous chip (1) is GaN base light-emitting diode or GaN base laser diode.
3. white semiconductor lighting according to claim 1, is characterized in that: the described fluorescent material with yellow component is coated on Transparent lamp shade (11) and forms coating (12).
4. white semiconductor lighting according to claim 3, is characterized in that: the described fluorescent material with yellow component is coated in Transparent lamp shade (11) outside.
5. white semiconductor lighting according to claim 3, is characterized in that: the described fluorescent material with yellow component is coated in Transparent lamp shade (11) inner side.
6. white semiconductor lighting according to claim 1, is characterized in that: the described fluorescent material with yellow component is fired in Transparent lamp shade (11).
7. white semiconductor lighting according to claim 1, is characterized in that: described semiconductor luminous chip (1) is for single or string are or/and many of parallel connection.
8. white semiconductor lighting according to claim 1, is characterized in that: described heat-radiating substrate (2) adopts resin plate, ceramic wafer or metallic plate to make.
9. white semiconductor lighting according to claim 1, is characterized in that: make with the plastics of reflectance coating or metal material inside described reflecting condensation cover (10) adopts.
10. white semiconductor lighting according to claim 1, is characterized in that: described Transparent lamp shade (11) adopts clear glass or transparent plastic to make.
CN201521127636.9U 2015-12-30 2015-12-30 White light semiconductor lighting lamps and lanterns Active CN205231111U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201521127636.9U CN205231111U (en) 2015-12-30 2015-12-30 White light semiconductor lighting lamps and lanterns

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201521127636.9U CN205231111U (en) 2015-12-30 2015-12-30 White light semiconductor lighting lamps and lanterns

Publications (1)

Publication Number Publication Date
CN205231111U true CN205231111U (en) 2016-05-11

Family

ID=55906157

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201521127636.9U Active CN205231111U (en) 2015-12-30 2015-12-30 White light semiconductor lighting lamps and lanterns

Country Status (1)

Country Link
CN (1) CN205231111U (en)

Similar Documents

Publication Publication Date Title
CN103322525B (en) LED (light-emitting diode) lamp and filament thereof
WO2015081804A1 (en) Spiral led filament and light bulb using spiral led filament
CN201078631Y (en) White radiation light emitting diode with improved structure
CN101769455A (en) LED bulb adopting whole-body fluorescence conversion technology
CN101968181A (en) High-efficiency LED lamp bulb
JP2017532793A (en) Substrate used for LED sealing, three-dimensional LED sealing body, light bulb having three-dimensional LED sealing body, and manufacturing method thereof
CN102913787B (en) A kind of LED light source and the bulb adopting this light source to manufacture
CN101123289A (en) Bidirectional luminescent heat radiation LED
CN101169235A (en) White light LED with modified structure
CN102147068A (en) LED lamp capable of replacing compact fluorescent lamp
CN203413560U (en) LED (light-emitting diode) lamp and lamp filament thereof
CN201126826Y (en) Light emitting diode capable of bidirectional luminescence and heat radiation
CN207962121U (en) The LED illuminator structure and LED lamp structure of gas conduction excitation
CN104154444A (en) LED lamp with reflecting metal cylinder
CN201621499U (en) LED bulb employing integral fluorescence conversion technology
CN202868390U (en) Novel light-emitting diode (LED) power source and bulb produced with the same
CN205231111U (en) White light semiconductor lighting lamps and lanterns
CN201621627U (en) Distance separation device for LED and fluorescent powder
US20220146057A1 (en) Lighting device and bulb
CN205174069U (en) LED bulb with U -shaped filament
CN204922548U (en) High illuminance LED bulb entirely gives out light; give off light
CN203225277U (en) High-power LED packaging structure
CN201973476U (en) Novel high-power LED (Light Emitting Diode) nano lamp
CN108036243B (en) LED ground lamp
CN202100971U (en) LED (light emitting diode) lamp capable of replacing compact fluorescent lamp

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant