CN114914347A - Light-emitting chip manufacturing method and light-emitting chip - Google Patents
Light-emitting chip manufacturing method and light-emitting chip Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 222
- 239000002096 quantum dot Substances 0.000 claims abstract description 69
- 239000013078 crystal Substances 0.000 claims abstract description 64
- 238000000034 method Methods 0.000 claims abstract description 25
- 238000005498 polishing Methods 0.000 claims abstract description 13
- 238000011049 filling Methods 0.000 claims abstract description 10
- 238000000227 grinding Methods 0.000 claims abstract description 9
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000004018 waxing Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 239000007788 liquid Substances 0.000 abstract description 4
- 239000003292 glue Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention discloses a method for manufacturing a light-emitting chip, which comprises the steps of firstly reducing the thickness of a first substrate with a porous structure to a target thickness, then filling quantum dots in at least part of holes of the first substrate after the thickness is reduced to the target thickness, and bonding the first substrate and a second substrate with a plurality of crystal grains, wherein a first light color emitted by the crystal grains is converted into a target light color through the quantum dots. The invention can avoid the failure or performance reduction of the quantum dots caused by the influence of high temperature conditions, grinding liquid, polishing liquid and the like during grinding and polishing in the process of thinning the first substrate, and ensure the color conversion efficiency of the quantum dots. Meanwhile, the invention also provides a light-emitting chip manufactured by the manufacturing method.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting chip manufacturing method and a light-emitting chip.
Background
Quantum Dot (QD) materials have the characteristics of high color purity, adjustable luminescent color, high fluorescence quantum yield and the like due to excellent photoelectric characteristics, and at present, the display application of quantum dot materials is mainly based on the color conversion characteristics, and generally, ultraviolet light or blue light is used as an excitation source, and green light and red light quantum dots are adopted to convert excitation light into required green light or red light.
However, the fluorescence performance of the quantum dots is rapidly reduced when the quantum dots meet moisture and heat, and the stability is also reduced, so that the characteristic of the quantum dots that the quantum dots are resistant to water and heat greatly restricts the process of the quantum dot light-emitting chip.
Disclosure of Invention
The invention aims to provide a manufacturing method of a light-emitting chip capable of avoiding the influence of factors such as temperature, moisture and the like on quantum dots and the light-emitting chip manufactured by the manufacturing method.
In order to achieve the above object, the present invention provides a method for manufacturing a light emitting chip, comprising:
reducing the thickness of the first substrate with the porous structure to a target thickness;
filling quantum dots into at least part of the holes of the first substrate after the thickness is reduced to the target thickness,
and bonding the first substrate with the target thickness, which is obtained by thinning the thickness of the first substrate, with a second substrate with a plurality of crystal grains, wherein the first light color emitted by the crystal grains is converted into the target light color through the quantum dots.
In some embodiments, quantum dots are filled in at least part of the holes of the first substrate after the thickness is reduced to the target thickness, and then the first substrate filled with quantum dots is bonded with the second substrate.
In some embodiments, the first substrate has first and second opposing faces, the porous structure is disposed on the first face of the first substrate, the second substrate has third and fourth opposing faces, and the plurality of die are disposed on the third face of the second substrate; and bonding the first surface of the first substrate with the third surface of the second substrate.
In some embodiments, the first substrate after the thickness is reduced to the target thickness is bonded to the second substrate, and then quantum dots are filled in at least part of the holes of the first substrate after the first substrate is bonded to the second substrate.
In some embodiments, the first substrate has first and second opposing faces, the porous structure is disposed on the first face of the first substrate, the second substrate has third and fourth opposing faces, and the plurality of die are disposed on the third face of the second substrate; and bonding the second surface of the first substrate with the third surface of the second substrate.
In some embodiments, the method for manufacturing a light emitting chip further comprises: preparing the second substrate having a plurality of crystal grains, including: providing a growth substrate, and preparing a plurality of crystal grains on the growth substrate; bonding and fixing one side of the crystal grains, which is far away from the growth substrate, with a second base plate; and peeling off the growth substrate to obtain the second substrate with the plurality of crystal grains.
In some embodiments, the plurality of dies are adhesively secured to the second substrate, and after bonding the first substrate having the porous structure to the second substrate having the plurality of dies, further comprising: and releasing the bonding of the plurality of crystal grains and the second substrate.
In some embodiments, after filling quantum dots into at least a portion of the holes of the first substrate and releasing the bonding between the plurality of dies and the second substrate, the method further includes: and cutting along the gaps among the crystal grains to obtain the light-emitting chip comprising at least one crystal grain.
In some embodiments, the first substrate has first and second opposing faces, the porous structure is disposed on the first face of the first substrate, and thinning the thickness of the first substrate with the plurality of holes to a target thickness comprises: providing a support structure, and waxing to fix the first surface of the first substrate and the support structure; grinding and polishing the second surface of the first substrate to reduce the thickness of the first substrate to a target thickness; removing the wax to separate the first side of the first substrate from the support structure.
In some embodiments, the first substrate having a plurality of holes has a warpage value of less than or equal to 35 microns.
In order to achieve the purpose, the invention also provides a light-emitting chip which is manufactured by the manufacturing method.
Compared with the prior art, the method has the advantages that the thickness of the first substrate with the porous structure is reduced to the target thickness, then the quantum dot filling is carried out, and the first substrate and the second substrate with a plurality of crystal grains are bonded, so that the problem that the quantum dots lose efficacy or performance is reduced due to the influence of high-temperature conditions, grinding liquid, polishing liquid and the like during grinding and polishing in the process of reducing the first substrate can be avoided, and the color conversion efficiency of the quantum dots is ensured.
Drawings
Fig. 1 is a process diagram illustrating a method for manufacturing a light emitting chip according to an embodiment of the invention.
Fig. 2 is a process diagram of a method for manufacturing a light emitting chip according to another embodiment of the invention.
Detailed Description
In order to explain the contents, structural features, objects and effects of the present invention in detail, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical scheme of the embodiment of the invention is explained in detail below with reference to the attached drawings:
the first embodiment is as follows:
referring to fig. 1, a method for manufacturing a light emitting chip according to an embodiment of the present invention includes the following steps S1-S5.
S1, providing the first substrate 2 having the porous structure 1, as shown in fig. 1 (a 1); and the thickness of the first substrate 2 with the porous structure 1 is reduced to a target thickness, and the first substrate 2 after the reduction to the target thickness is shown as (a4) in fig. 1.
Wherein, the ratio of the holes of the porous structure 1 to the surface area of the whole porous structure 1 is up to more than 70%, the diameter of the holes is 500 nm-1.5 um, the depth of the holes is 8-10um, and the light can be continuously reflected in the holes, thereby achieving better light color conversion effect.
In one embodiment, the warpage value of the first substrate 2 having the porous structure 1 is less than or equal to 35 μm. Because the warpage value of the first substrate 2 is small, before the quantum dots 7 are filled and the first substrate 2 is bonded with the second substrate 5 with a plurality of crystal grains 4, the thickness of the first substrate 2 is thinned to a target thickness, and the situation that the first substrate 2 is small in overall thickness and weak in strength and stability and cracks occur in the thinning process is avoided.
In one embodiment, a thickened growth substrate (e.g., sapphire substrate, silicon carbide substrate, etc.) is first provided, which may have a thickness of, for example, 800 um; then, growing a thickened AlN buffer layer on the growth substrate by a Physical Vapor Deposition (PVD) method, wherein the thickness of the AlN buffer layer may be, for example, 200 nm; then, an N-GaN epitaxial layer is grown on the AlN buffer layer by Hydride Vapor Phase Epitaxy (HVPE) method, and the thickness of the N-GaN epitaxial layer may be, for example, 5 um; thus, the substrate without the holes is prepared, and the AlN buffer layer is thicker, so that the stress influence during the growth of the N-GaN epitaxial layer can be reduced, and the warping value of the prepared substrate can be reduced; then, a plurality of holes are formed on the N-GaN epitaxial layer of the substrate through laser etching, electrochemical etching, photoetching and the like, and the first substrate 2 with the warpage value smaller than or equal to 35 micrometers is obtained.
The first substrate 2 has a first face (i.e., the face of the N-GaN epitaxial layer facing away from the growth substrate) and a second face (i.e., the face of the growth substrate facing away from the N-GaN epitaxial layer) opposite to each other, and the porous structure 1 is disposed on the first face of the first substrate 2. In one embodiment, when thinning the first substrate 2, first, a supporting structure is provided, and the first side (the porous structure 1) of the first substrate 2 is fixed to the supporting structure by waxing, where the waxed first substrate 2 is shown as (a2) in fig. 1; then, the second surface of the first substrate 2 is ground and polished by a polishing and grinding apparatus, so that the thickness of the first substrate 2 is reduced to a target thickness, and the reduced first substrate 2 is shown as (a3) in fig. 1; then, the wax 3 is removed to separate the first surface of the first substrate 2 from the support structure, and specifically, the wax may be washed by a wax removing solution, and then the first substrate 2 is dried, and the first substrate 2 after the wax is removed is as shown in fig. 1 (a 4).
In one embodiment, the total thickness of the first substrate 2 with the porous structure 1 is about 600-800um before the first substrate 2 is thinned, and the total thickness of the first substrate 2 with the porous structure 1 is less than 100um after the first substrate 2 is thinned, i.e. the target thickness is less than 100 um. Of course, the specific thickness of the first substrate 2 before and after thinning is not limited in the specific implementation.
S2, bonding the first substrate 2 with the target thickness and the second substrate 5 with a plurality of dies 4, wherein the dies 4 are used for emitting the first light color, and the structure obtained by bonding the first substrate 2 with the second substrate 5 with a plurality of dies 4 is shown in fig. 1 (c 1).
A layer of bonding paste 6, such as 3-5um bonding paste, may be spin-coated on the second surface of the first substrate 2 by a spin coater, and the first substrate 2 after spin-coating a layer of bonding paste 6 is shown in fig. 1 (a 5). When the bonding paste 6 is spin-coated, the rotation speed of the spin coater may be, for example, 3500-.
Of course, a layer of bonding glue may be spin-coated on the surface of the second substrate 5 having the plurality of dies 4 for bonding with the first substrate 2.
In one embodiment, when the first substrate 2 with the reduced thickness to the target thickness is bonded with the second substrate 5 with the plurality of crystal grains 4, the adopted bonding glue 6 is a thermal curing glue, the bonding temperature is 80-150 ℃, the bonding time is more than 20min as the bonding curing time required by the higher temperature is shorter, and the quantum dots 7 are not injected into the holes at the moment, so the quantum dots 7 are not influenced by the high temperature. In one embodiment, when the first substrate 2 with the reduced thickness to the target thickness is bonded with the second substrate 5 with the plurality of crystal grains 4, the bonding glue 6 is a UV curing glue with an energy greater than 1000mj, so as to realize rapid bonding of the first substrate 2 with the second substrate 5 with the plurality of crystal grains 4, and similarly, since the quantum dots 7 are not injected into the holes, the quantum dots 5 are not affected by the energy.
In one embodiment, the plurality of dies 4 are bonded to the second substrate 5, and the second substrate 5 may be a substrate having a bonding paste on one side, such as a glass substrate having a bonding paste on one side. The die 4 may be a die capable of emitting blue light.
In some embodiments, the second substrate 5 having the plurality of crystal grains 4 is prepared by: first, a growth substrate 8 is provided, and a plurality of crystal grains 4 are prepared on the growth substrate 8, such as a sapphire substrate, as shown in fig. 1 (b 1); then, the side of the plurality of crystal grains 4, which faces away from the growth substrate 8, is fixedly bonded to the second substrate 5 in a vacuum environment, as shown in fig. 1 (b 2); finally, the growth substrate 8 is peeled off, and the second base plate 5 having the plurality of crystal grains 4 is obtained, as shown in fig. 1 (b 3).
S3, filling quantum dots 7 in at least a portion of the holes of the first substrate 2 bonded to the second substrate 5 having the plurality of crystal grains 4, converting the first light color emitted from the crystal grains 4 into the target light color through the quantum dots 7, and filling the quantum dots 7 in the first substrate 2 as shown in fig. 1 (c 2).
The quantum dots 7 may be quantum dots that convert the first light color emitted from the crystal grains 4 into red light, quantum dots that convert the first light color emitted from the crystal grains 4 into green light, or the like. The first light color emitted by the die 4 may be blue light, for example.
Quantum dots 7 may be filled in all the holes of the first substrate 2, and all the crystal grains 4 corresponding to the manufactured light-emitting chip can convert the first light color emitted by the light-emitting chip into the target light color through the quantum dots 7; or, the quantum dots 7 may be filled in only some of the holes of the first substrate 2, and a portion of the crystal grains 4 corresponding to the manufactured light emitting chip may convert the first light color emitted by the crystal grains into the target light color through the quantum dots 7, and the light emitting side of some of the crystal grains 4 is not provided with the quantum dots 7, so that the original light color of the first light color is maintained.
S4, the connection between the plurality of crystal grains 4 and the second substrate 5 is released, and a light emitting module including the plurality of crystal grains 4 and the quantum dots 7 is obtained, as shown in fig. 1 (c 3). The connection between the plurality of dies 4 and the second substrate 5 is released to remove the second substrate 5, so that the light emitting module is cut in the subsequent step S5, and at the same time, the thickness of the manufactured light emitting chip is made thinner. Of course, in some embodiments, this step S4 may also be omitted.
S5, cutting the light emitting module along the gaps between the dies 4 to obtain a light emitting chip including at least one die 4.
The light emitting chip may include only one die 4 as shown in fig. 1 (c 4). The light emitting chip may also include, for example, three crystal grains, for example, the first light color emitted by the crystal grains is blue light, a hole corresponding to one of the crystal grains in the light emitting chip is filled with red light quantum dots, a hole corresponding to one of the crystal grains is filled with green light quantum dots, and a hole corresponding to one of the crystal grains is not filled with quantum dots, so that the manufactured light emitting chip can realize RGB full-color display.
In the above embodiment, the multi-hole structure 1 is disposed on the first surface of the first substrate 2, the second substrate 5 has the third and fourth opposite surfaces, and the plurality of dies 4 are disposed on the third surface of the second substrate 5 to bond the second surface of the first substrate 2 and the third surface of the second substrate 5. After the first substrate 2 is bonded to the second substrate 5 having the plurality of crystal grains 4, the porous structure 1 of the first substrate 2 is located at a side away from the second substrate 5 having the plurality of crystal grains 4, and the porous structure 1 is exposed, so that the quantum dot injection step can be performed after the first substrate 2 is bonded to the second substrate 5 having the plurality of crystal grains 4, the quantum dots 7 are not affected by the polishing in step S1 to thin the first substrate 2, such as contact corrosion of the polishing solution and the polishing solution, the heat and water generated by the polishing, the temperature during waxing and dewaxing, and the processing conditions and bonding materials corresponding to the bonding of the first substrate 2 to the second substrate 5 having the plurality of crystal grains 4 in step S2, and the performance of the final quantum dots 7 can be effectively ensured, thereby ensuring the color conversion efficiency of the quantum dots 7.
Example two:
referring to fig. 2, a method for fabricating a light emitting chip according to an embodiment of the present invention includes the following steps S1-S5.
S1, providing the first substrate 2 having the porous structure 1, and reducing the thickness of the first substrate 2 having the porous structure 1 to a target thickness, the first substrate 2 after being reduced to the target thickness is shown in fig. 2 (a 4).
S2, filling the quantum dots 7 into at least a part of the holes of the first substrate 2 after the thickness reduction to the target thickness, and the first substrate 2 after the quantum dots 7 are filled is shown in fig. 2 (a 5).
S3, bonding the first substrate 2 filled with the quantum dots 7 and the second substrate 5 having the plurality of crystal grains 4, the crystal grains 4 being used for emitting the first light color, and converting the first light color into the target light color through the quantum dots 7, the second substrate 5 having the plurality of crystal grains 4 being as shown in fig. 2 (b3), and the structure obtained by bonding the first substrate 2 and the second substrate 5 having the plurality of crystal grains 4 being as shown in fig. 2 (c 1).
In the embodiment shown in fig. 2, the first substrate 2 has a first face and a second face opposite to each other, the porous structure 1 is disposed on the first face of the first substrate 2, the second substrate 5 has a third face and a fourth face opposite to each other, the plurality of crystal grains 4 are disposed on the third face of the second substrate 5, and the first face of the first substrate 2 filled with the quantum dots 7 is bonded to the third face of the second substrate 5, as shown in fig. 2 (c 1).
When bonding the first surface of the first substrate 2 and the third surface of the second substrate 5, a layer of bonding glue 6 may be spin-coated on the first surface of the first substrate 2 by using a spin coater, and as shown in fig. 2 (a6), the bonding glue 6 may bond the first substrate 2 and the third surface of the second substrate 5. It is also possible to spin a layer of bonding paste on the third surface of the second substrate 5 having the plurality of dies 4 by a spin coater.
S4, the connection between the plurality of crystal grains 4 and the second substrate 5 is released, and a light emitting module including the plurality of crystal grains 4 and the quantum dots 7 is obtained, as shown in fig. 2 (c 2).
S5, cutting the light emitting module along the gaps between the dies 4 to obtain a light emitting chip including at least one die 4, as shown in fig. 1 (c 3).
Different from the above-mentioned embodiment, in this embodiment, the quantum dots 7 are filled in at least part of the holes of the first substrate 2 after the thickness is reduced to the target thickness, and then the first substrate 2 filled with the quantum dots 7 is bonded with the second substrate 5 having the plurality of crystal grains 4, because the quantum dot injection step does not require that the holes of the first substrate 2 are exposed after the first substrate 2 is reduced and before the first substrate 2 is bonded with the second substrate 5 having the plurality of crystal grains 4, the hole surface (first surface) of the first substrate 2 can be bonded with the second substrate 5 having the plurality of crystal grains 4, and the distance between the crystal grains 4 and the quantum dots 7 after bonding is smaller (no porous structure 1 is arranged on the first substrate 2, such as a growth substrate, for example), the light leakage can be better avoided, the color conversion effect can be improved, and at the same time, the portion of the first substrate 2 not provided with the porous structure 1 covers the side of the quantum dots 7 away from the crystal grains 4 And the function of protecting the quantum dots 7 can be achieved. Of course, in some embodiments, the first substrate 2 and the second substrate 5 having the plurality of crystal grains 4 may be bonded together with the hole surface of the first substrate 2 still being on the side away from the crystal grains 4, so as to further reduce the influence of the corresponding processing conditions and bonding materials on the quantum dots 7 during bonding.
For a more specific manufacturing process of the light emitting chip, reference may be made to the description in the first embodiment, and details are not described herein again.
In summary, the invention firstly reduces the thickness of the first substrate 2 with the porous structure 1 to the target thickness, then carries out quantum dot filling and carries out bonding between the first substrate 2 and the second substrate 5 with a plurality of crystal grains 4, which can avoid the failure or performance reduction of the quantum dots 7 caused by the influence of high temperature conditions, grinding fluid, polishing fluid and the like during grinding and polishing in the process of reducing the first substrate 2, and ensure the color conversion efficiency of the quantum dots 7.
The above disclosure is only a preferred embodiment of the present invention, and should not be taken as limiting the scope of the invention, so that the appended claims are intended to cover all such modifications and changes as fall within the true spirit of the invention.
Claims (11)
1. A method for manufacturing a light-emitting chip is characterized by comprising the following steps:
reducing the thickness of the first substrate with the porous structure to a target thickness;
filling quantum dots into at least part of the holes of the first substrate after the thickness is reduced to the target thickness,
and bonding the first substrate with the target thickness, which is obtained by thinning the thickness of the first substrate, with a second substrate with a plurality of crystal grains, wherein the first light color emitted by the crystal grains is converted into the target light color through the quantum dots.
2. The method for manufacturing a light-emitting chip according to claim 1, wherein quantum dots are filled in at least a part of the holes of the first substrate after the thickness is reduced to the target thickness, and then the first substrate filled with quantum dots is bonded to the second substrate.
3. The method of claim 2, wherein the first substrate has a first surface and a second surface opposite to each other, the porous structure is disposed on the first surface of the first substrate, the second substrate has a third surface and a fourth surface opposite to each other, and the plurality of dies are disposed on the third surface of the second substrate; and bonding the first surface of the first substrate with the third surface of the second substrate.
4. The method of manufacturing a light emitting chip according to claim 1, wherein the first substrate and the second substrate are bonded after the thickness is reduced to the target thickness, and then quantum dots are filled in at least a part of the holes of the first substrate bonded to the second substrate.
5. The method of claim 4, wherein the first substrate has a first surface and a second surface opposite to each other, the porous structure is disposed on the first surface of the first substrate, the second substrate has a third surface and a fourth surface opposite to each other, and the plurality of dies are disposed on the third surface of the second substrate; and bonding the second surface of the first substrate with the third surface of the second substrate.
6. The method for manufacturing a light emitting chip according to claim 1, further comprising: preparing the second substrate having a plurality of crystal grains, including:
providing a growth substrate, and preparing a plurality of crystal grains on the growth substrate;
bonding and fixing one side of the crystal grains, which is far away from the growth substrate, with a second base plate;
and peeling off the growth substrate to obtain the second substrate with the plurality of crystal grains.
7. The method of manufacturing a light emitting chip according to claim 1, wherein the plurality of dies are bonded and fixed to the second substrate,
after bonding the first substrate having the porous structure and the second substrate having the plurality of crystal grains, further comprising:
and releasing the bonding of the plurality of crystal grains and the second substrate.
8. The method of claim 7, further comprising, after filling quantum dots in at least some of the holes of the first substrate and releasing the bonding between the plurality of dies and the second substrate:
and cutting along the gaps among the crystal grains to obtain the light-emitting chip comprising at least one crystal grain.
9. The method of claim 1, wherein the first substrate has a first side and a second side opposite to each other, the porous structure is disposed on the first side of the first substrate, and the reducing the thickness of the first substrate having the plurality of holes to a target thickness comprises:
providing a support structure, and waxing to fix the first surface of the first substrate and the support structure;
grinding and polishing the second surface of the first substrate to reduce the thickness of the first substrate to a target thickness;
removing the wax to separate the first side of the first substrate from the support structure.
10. The method of manufacturing a light emitting chip according to any one of claims 1 to 9, wherein a warpage value of the first substrate having the plurality of holes is less than or equal to 35 μm.
11. A light-emitting chip, wherein the light-emitting chip is manufactured by the manufacturing method according to any one of claims 1 to 10.
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| CN202210546705.8A CN114914347A (en) | 2022-05-19 | 2022-05-19 | Light-emitting chip manufacturing method and light-emitting chip |
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| CN202210546705.8A CN114914347A (en) | 2022-05-19 | 2022-05-19 | Light-emitting chip manufacturing method and light-emitting chip |
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