KR20190141512A - Wafer for light emitting device and method of manufacturing a panel with the same - Google Patents

Abstract

The present invention provides a wafer for a semiconductor light emitting element which comprises: a growth substrate; a buffer layer formed on the growth substrate; a growth prevention film formed on the buffer layer, having a plurality of numbers, and having a longest width of each opening which is equal to or less than 100 μm; and a plurality of semiconductor light emitting units grown from the buffer layer in each opening, grown by being spaced apart from each other, and having a longest width of each semiconductor light emitting unit which is equal to or less than 100 μm.

Description

A wafer for a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device panel using the same {WAFER FOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING A PANEL WITH THE SAME}

The present disclosure relates to a wafer for a semiconductor light emitting device and a method for manufacturing a semiconductor light emitting device panel using the same, in particular, a mini LED (a device having a width of about 100 μm) and a micro LED having a width of less than 100 μm) The present invention relates to a wafer for a semiconductor light emitting device and a method of manufacturing a semiconductor light emitting device panel using the same, wherein the process is performed at the wafer level.

Here, the semiconductor light emitting device refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, group III nitride semiconductor light emitting devices (LED, LD). The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, GaAs type semiconductor light emitting elements used for red light emission, etc. are mentioned.

This section provides background information related to the present disclosure which is not necessarily prior art.

1 is a view showing an example of a method of manufacturing a semiconductor light emitting device panel shown in US Patent No. 8,349,116, the transfer of the semiconductor light emitting device 200 to the substrate 300 using a carrier 100 for transporting The process of transferring is shown. Reference numeral 210 is a bonding layer, 220 is an electrode layer, 250 is a micro LED light emitting unit, 260 is a dielectric protective film, and 310 is an electrical contact.

FIG. 2 is a view illustrating an example of a method of manufacturing the semiconductor light emitting device panel disclosed in US Patent No. 8,794,501. First, a micro LED light emitting unit 250 in a wafer state on a support carrier or a support substrate 400 is illustrated. ), The growth substrate 240 is removed by laser lift-off, wet etching, or the like (b), and the semiconductor lower layer 230 is removed by polishing, wet etching, or dry etching. By doing so, a technique of individualizing the micro LED light emitting unit 250 is proposed. In this state, after the necessary process, the micro LED light emitting unit 250 is transferred to the substrate 300 by using the carrier carrier 100 as shown in Figure 1 to manufacture a semiconductor light emitting device panel.

This is described later in the section titled 'Details of the Invention.'

This section provides a general summary of the disclosure and is not a comprehensive disclosure of its full scope or all, provided that this is a summary of the disclosure. of its features).

According to one aspect of the present disclosure (According to one aspect of the present disclosure), a method of manufacturing a semiconductor light emitting device panel, comprising: forming a removal layer on a growth substrate; Growing a semiconductor light emitting part on the removal layer; Separating the semiconductor light emitting part into a growth substrate, wherein the semiconductor light emitting part is separated into a plurality of semiconductor light emitting parts, and a part of the removing layer between the growth substrate and each semiconductor light emitting part is removed so that a plurality of the removing layers remain. Separating the semiconductor light emitting part from the growth substrate; and attaching the semiconductor light emitting part to the substrate so as to conduct some or all of the plurality of semiconductor light emitting parts.

According to another aspect of the present disclosure, an according to another aspect of the present disclosure includes: a wafer for a semiconductor light emitting device, comprising: a growth substrate; A buffer layer formed on the growth substrate; A growth prevention film formed on the buffer layer and having a plurality of numbers, the growth prevention film having a longest width of each opening of 100 µm or less; A plurality of semiconductor light emitting parts grown from a buffer layer in each opening and spaced apart from each other; a plurality of semiconductor light emitting parts having a longest width of each semiconductor light emitting part of 100 μm or less; A wafer is provided.

This is described later in the section titled 'Details of the Invention.'

1 is a view showing an example of a method of manufacturing a semiconductor light emitting device panel shown in US Patent No. 8,349,116,
2 is a view showing an example of a method of manufacturing a semiconductor light emitting device panel shown in US Patent No. 8,794,501;
3 illustrates an example of a method of manufacturing a semiconductor light emitting unit according to the present disclosure;
4 is a view showing still another example of a method of manufacturing a semiconductor light emitting unit according to the present disclosure;
5 is a view showing still another example of a method of manufacturing a semiconductor light emitting unit according to the present disclosure;
6 illustrates an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;
7 is a view showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;
8 is a view showing still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;
9 to 11 show still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure;
12 to 15 illustrate examples of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
16 and 17 illustrate still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
18 illustrates another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
19 illustrates examples of a method for selectively transferring a semiconductor light emitting unit according to the present disclosure;
20 is photographs showing examples of a semiconductor light emitting part actually grown according to the method shown in FIG. 4;
21 is a diagram illustrating an example of a cross-sectional structure in which a semiconductor light emitting part is grown according to the present disclosure and an example of a cross-sectional structure in which a semiconductor light emitting part is grown using conventional selective growth;
22 is a diagram illustrating an example of a detailed structure of a semiconductor light emitting unit according to the present disclosure;
23 illustrates various forms of a semiconductor light emitting portion manufactured according to the present disclosure;
24 is a view showing still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
25 is a view showing still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
26 illustrates another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
27 illustrates another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
28 illustrates another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
29 illustrates another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
30 illustrates an example of a method of manufacturing a carrier according to the present disclosure;
31 illustrates another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure;
32 is a view showing an example of a method of making a permanent magnet (30M) according to the present disclosure,
33 are photographs taken of a semiconductor light emitting part manufactured according to the present disclosure;
34 are graphs representing experimental data for this disclosure,
35 illustrates an example of an electronic device that may be used in the present disclosure;
36 illustrates another example of a method of manufacturing a carrier according to the present disclosure;
FIG. 37 illustrates an example of using the carrier shown in FIG. 36; FIG.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

3 is a view illustrating an example of a method of manufacturing a semiconductor light emitting unit according to the present disclosure. First, a growth substrate 10 (eg, a sapphire substrate) is prepared (step ①). The growth substrate 10 may be made of a material such as sapphire (Al ₂ O ₃ ), SiC, Si, etc., there is no particular limitation as long as the growth of the semiconductor is possible. Hereinafter, a group III nitride semiconductor is used as the semiconductor and a sapphire substrate is used as the growth substrate 10 as an example. Next, a buffer layer to seed layer 20 (for example, AlN) for stably growing the semiconductor is prepared on the growth substrate 10 (step ②). The buffer layer 20 may be made of a material such as GaN, AlGaN, AlN, CrN, and the like, and any material may be used to overcome the difference in lattice constants and thermal expansion coefficients of the growth substrate 10 and the semiconductor and grow a high-quality semiconductor. There is no. Finally, the semiconductor light emitting part 30 (for example, LED) is formed on the buffer layer 20 (step ③). For example, the semiconductor light emitting unit 30 may include an n-type semiconductor layer (Si-doped GaN), an active layer (for example, an InGaN / GaN multi-quantum well structure), and a p-type semiconductor layer (Mg-doped GaN). The semiconductor light emitting unit 30 is not particularly limited as long as it emits light by using a PN junction and recombination of electrons and holes. The buffer layer 20 and the semiconductor light emitting part 30 may be grown by a deposition method such as MOCVD.

4 is a diagram illustrating still another example of a method of manufacturing a semiconductor light emitting unit according to the present disclosure. First, a growth substrate 10 (eg, a sapphire substrate) is prepared (step 1; see FIG. 3). Next, a buffer layer 20 is formed on the growth substrate 10 (step ②; see FIG. 3). Next, a semiconductor growth prevention film 21 (for example, SiO ₂ ) is formed on the buffer layer 20 (step ④). Next, a plurality of semiconductor growth openings 22 are formed in the semiconductor growth prevention film 21 (step ⑤). The plurality of semiconductor growth openings 22 may be formed by patterning the semiconductor growth preventing film 21 through a photolithography process and etching (wet or dry) to expose the buffer layer 20. In addition, the semiconductor growth prevention film 21 having the plurality of semiconductor growth openings 22 forms a photoresist PR so as to correspond to the plurality of semiconductor growth openings 22, and then deposits the semiconductor growth prevention film 21. It can form by removing a photoresist. The semiconductor growth prevention film 21 may be made of a dielectric material such as SiO ₂ or SiN _x, and is not particularly limited as long as the growth of the semiconductor is suppressed. It is also possible to first form the semiconductor growth preventing film 21 having the plurality of semiconductor growth openings 22 and to form the buffer layer 20. Examples of the shape of the plurality of semiconductor growth openings 22 include hexagonal and tetragonal shapes (eg, trapezoids, diamonds), and the like, and there is no particular limitation as long as the semiconductor layer can be grown. As illustrated, when the C surface sapphire is used as the growth substrate 10, the surface of each semiconductor growth opening 22 can be formed in a hexagon, a hexagon, or the like so as to have an a-axis direction. When the surface of the growth opening 22 is in the a-axis direction, that is, the surface of the growth substrate 10 exposed by the growth opening 22 is in the a-axis direction, and the group III nitride semiconductor layer (for example, GaN) Each face is formed with an m face. The m plane of the group III nitride semiconductor layer (eg, GaN) has a property of poor growth in the m-axis direction, and thus the sides of the grown semiconductor light emitting portion 30 (that is, per side of the semiconductor light emitting portion 30). Surface) may have the same shape as that of the growth opening 22. Furthermore, by adjusting the growth conditions, the area of the upper surface of the semiconductor light emitting part 30 may be made smaller than the area of the growth opening 22, thereby preventing the semiconductor light emitting parts 30 from being bonded. It becomes possible to ensure reliably, and it becomes possible to arrange | position the growth opening 22 more densely. In this case, it is also possible to incline the side surface of the semiconductor light emitting portion 30 to increase the light extraction efficiency. In addition, since the cross-section of the semiconductor light emitting portion 30 is formed to have a symmetrical shape, there is no need to consider the direction of the semiconductor light emitting portion 30 in a subsequent process, it is possible to facilitate the process (for example, fab process) Has In summary, the shape of the semiconductor light emitting portion 30 can be controlled by adjusting the orientation of the growth opening 22, thereby suppressing the unexpected growth of the semiconductor light emitting portion 30. Will be. More preferably, it is possible to have the above-mentioned advantages by designing the growth openings 22 so that the side surface of the semiconductor light emitting portion 30 has an orientation or a surface at which the growth rate is not fast. The size and spacing of the plurality of semiconductor growth openings 22 may vary depending on the size of the semiconductor light emitting portion 30 to be grown. For example, if the semiconductor light emitting portion 30 has a width of 50 μm, the same may be 50. It is formed to have a width of μm. The interval is preferably a width at which the semiconductor light emitting portions 30 grown in the neighboring semiconductor growth openings 22 are not bonded to each other. Finally, the semiconductor light emitting portion 30 is formed (step ③ '). Since the semiconductor growth prevention film 21 is formed, growth of the semiconductor light emitting portion 30 is mainly performed only in the plurality of semiconductor growth openings 22. The shape viewed from above the semiconductor light emitting portion 30 is influenced by the shape of the plurality of semiconductor growth openings 22, and may be formed into a hexagon, a quadrilateral, or a trapezoid. By having such a shape, it becomes possible to raise light extraction efficiency compared with the case where it has a rectangle or square shape only. When the group III nitride semiconductor is grown on the C surface sapphire, the upper surface is the same as the C surface, but has the m-axis and a-axis directions in the form shown in FIG. 4 (see FIG. 5).

FIG. 5 is a diagram illustrating still another example of a method of manufacturing a semiconductor light emitting unit according to the present disclosure. First, a growth substrate 10 (eg, a sapphire substrate) is prepared (step 1; see FIG. 3). Next, a buffer layer 20 (eg, AlN) is formed on the growth substrate 10 (step ②; see FIG. 3). Next, an etch stop layer 23 (eg, SiO ₂ ) is formed on the buffer layer 20 (step ⑤ ′). The etch stop layer 23 may be formed in the same manner as the semiconductor growth stop layer 22. Next, the buffer layer 20 and the growth substrate 10 are removed by a method such as dry etching, wherein the region where the etch stop layer 23 is formed is maintained without being removed. The region 11 of the growth substrate 10 removed and exposed serves as a semiconductor growth prevention region. The etch stop layer 23 is removed by a wet etching method. The shape of the remaining buffer layer 20 may have the same shape as the growth preventing opening 22 shown in FIG. 5, and is not particularly limited. Finally, the semiconductor light emitting part 30 is formed on the buffer layer 20 (step ③ "). Since the exposed region 11 of the growth substrate 10 functions as the semiconductor growth prevention film 21, semiconductor light emission is achieved. The growth of the portion 30 mainly occurs only on the remaining buffer layer 20. The shape of the semiconductor light emitting portion 30 seen from above is the same as that of the semiconductor light emitting portion 30 shown in FIG.

6 is a view illustrating an example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. First, a semiconductor light emitting unit 30 manufactured according to the method shown in FIG. 3 is prepared (step ③). Next, the epitaxial semiconductor light emitting part 30 is separated into the chip level semiconductor light emitting part 30 through etching (for example, ICP etching) (step ⑦). Here, a method such as dry etching or wet etching may be used, and there is no particular limitation as long as it can result in the semiconductor light emitting unit 30 at the chip level. The buffer layer 20 may be partially left in the process of individualization, but is preferably removed in consideration of the subsequent process. Finally, a portion of the buffer layer 20 (eg AlN) positioned between the semiconductor light emitting part 30 and the growth substrate 10 is removed by wet etching (step ⑧). The degree of etching is such that the semiconductor light emitting portion 30 is still fixed to the growth substrate 10 while the semiconductor light emitting portion 30 can be easily separated from the growth substrate 10 in a subsequent process. In this sense, the buffer layer 20 may be referred to as a removal layer, and if the removal layer is partially removed through wet etching between the growth substrate 10 and the semiconductor light emitting part 30, the growth substrate 10 may be removed. It does not have to be formed in contact with it. For example, when AlN is used as the buffer layer 20, KOH (Potassium hydroxide), AZ400K, KOH: ethylene glycol (mixed solution), H ₃ PO ₄ (Phosphoric acid) may be used as the wet etching solution. In the case of a KOH solution, the temperature is suitably about 20 to 80 ° C., and if necessary, an ethylene glycol solution may be added to process the same at a temperature of 80 to 200 ° C. The etching time is very dependent on the temperature of the etching solution. Possible to dozens of hours in minutes. The etching conditions may be adjusted such that the width of the buffer layer 20 remaining after etching is 20% or less of the width of the semiconductor light emitting part 30. As needed, the process of forming the electrode 50 in the semiconductor light-emitting part 30 is performed (step ⑨). This process may vary depending on whether the semiconductor light emitting unit 30 is a lateral chip, a flip chip, or a vertical chip. Accordingly, the number of electrodes may also vary.

FIG. 7 illustrates another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. First, a semiconductor light emitting unit 30 manufactured according to the method shown in FIG. 4 is prepared (step ③ ′). Next, the semiconductor etch stop layer 21 is removed (step ⑦ '). Of course, the buffer layer 20 may be removed in the removal process. Finally, a portion of the buffer layer 20 (eg AlN) positioned between the semiconductor light emitting part 30 and the growth substrate 10 is removed by wet etching (step ⑧). Unlike the example shown in FIG. 6, since the semiconductor light emitting part 30 is already individualized in the process of epitaxial growth, step ⑦ is not necessary. As needed, the process of forming the electrode 50 in the semiconductor light-emitting part 30 is performed (step ⑨).

FIG. 8 is a view showing another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. First, a semiconductor light emitting unit 30 manufactured according to the method shown in FIG. 5 is prepared (step ③ ″). By using wet etching, a portion of the buffer layer 20 (eg AlN) positioned between the semiconductor light emitting unit 30 and the growth substrate 10 is removed (step ⑧), unlike the example shown in FIG. Since the semiconductor light emitting portion 30 is already individualized, the step ⑦ is not necessary, and the exposed region 11 of the growth substrate 10 is provided, so that the etching liquid can be easily penetrated. The process of forming the electrode 50 in the semiconductor light emitting portion 30 is performed (step ⑨).

9 to 11 illustrate still another example of a method of manufacturing a semiconductor light emitting device according to the present disclosure. Unlike the examples shown in FIGS. 6 to 10, step 9 is performed before step 8. As a result, in the forming of the electrode 50 (step ⑨), the growth substrate 10 and the semiconductor light emitting part 30 may be separated from each other by the thin buffer layer 20, thereby preventing a process defect. However, in relation to the example shown in FIG. 10, the step (step ⑨) of forming the electrode 50 may be performed prior to the step (step ⑦ ′) of removing the semiconductor etch stop layer 21 (see FIG. 4).

12 to 15 are diagrams showing examples of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure, which will be described using the semiconductor light emitting device shown in FIG. 9 as an example. Of course, it can be applied to the semiconductor light emitting device shown in FIG.

First, as shown in FIG. 12, at least the semiconductor light emitting unit 30 is covered and fixed by the fixture 60 (step ⑩; it is also possible to surround the semiconductor light emitting unit 30 so that the fixture 60 exposes the electrode 50. Do). As described above, the electrode 50 may not be formed. The fixture 60 may be epoxy, polyimide, or the like widely used in a semiconductor process, and there is no particular limitation as long as it is a material capable of fixing the semiconductor light emitting unit 30 in a subsequent process. For example, the fixture 60 can be formed by applying and then curing the epoxy. Next, the fixture 60 integrated with the semiconductor light emitting portion 30 is separated from the growth substrate 10 (step VII). In general, since the bonding force between the fixture 60 and the growth substrate 10 is not high, a separation method focused on separating the semiconductor light emitting portion 30 and the growth substrate 10 may be used. On the other hand, in the present disclosure, since the semiconductor light emitting portion 30 and the growth substrate 10 are attached to each other by the buffer layer 20 having already been partially removed, it is not necessary to separate them without using a method such as laser lift-off. It is possible. For example, by attaching a vacuum chuck to both sides of the fixture 60 and the growth substrate 10 and applying a force in a separating direction, it is possible to separate them. Of course, it is possible to apply a shear stress. That is, they can be separated by mechanical force. If necessary, it is also possible to select a material having high interfacial adhesion with the growth substrate 10. As another example, in the state of step 9, it is also possible to prepare the carrier 71 of the type shown in Fig. 17 (a), and then remove the buffer layer 20 by wet etching. It is also possible to separate them using thermal stresses resulting from the difference in coefficient of thermal expansion between the buffer layer 20, the fixture 60 and the growth substrate 10. For example, the thermal expansion coefficient of the sapphire used as the growth substrate 10 is about 7 × 10 ^-6 ℃, the thermal expansion coefficient of the polymer generally used as the fixture 60 is about 70 × 10 ^-6 ℃, about 10 The difference is about twice. By using the expansion coefficient difference, it is possible to generate and separate thermal stress between the interfaces by repeating the heating and cooling processes one to several times. Next, the remaining residue is removed by ashing (step VII). The residue can be easily removed by an ashing process using an oxygen plasma. Since the thickness of the actual buffer layer 20 is about 30 nm, there is no problem even if it is not removed. If necessary, the buffer layer 20 can be removed using an Ar plasma.

FIG. 13 is a view showing an example of a method of transferring a semiconductor light emitting device having a flip chip shape to a carrier according to the present disclosure. First, the carrier 70 is attached to the side A from which residue is removed using an adhesive. (Step ⑬). Carrier 70 is preferably made of a material of less bending, for example, may be made of glass, sapphire and the like, there is no particular limitation. Next, a part of the fixture 60 is removed to expose the electrode 50 (step VII). Next, the electrode 50 is attached to the substrate 80 provided with the electrode pad 81 by soldering, eutectic bonding, paste, or the like (step VII). Finally, the fixture 60 and the carrier 70 are removed to complete the semiconductor light emitting device panel.

FIG. 14 is a view illustrating an example of a method of transferring a semiconductor light emitting device having a vertical chip shape to a carrier according to the present disclosure. First, a fixture 60 is formed by using an adhesive on a side B provided with an electrode 50. The carrier 70 is attached to the carrier 70 (step ′ '), and an additional electrode 51 is formed on the semiconductor light emitting portion 30 at the side A from which the residue is removed (step ′ ′). Next, the additional electrode 51 is attached to the board | substrate 80 with which the electrode pad 81 was provided (step # '). Finally, the fixture 60 and the carrier 70 are removed to complete the semiconductor light emitting device panel.

FIG. 15 is a view illustrating an example of a method of transferring a semiconductor light emitting device having a lattice chip shape to a carrier according to the present disclosure. First, an opposite side of the side A from which the buffer layer 20 (see FIG. 12) is removed ( The carrier 70 is attached to C) using an adhesive (step VII). Next, the side A from which the buffer layer 20 (see Fig. 12) is removed is attached to the substrate 80 using an adhesive. (Step ⑮ "). Next, the fixture 60 and the carrier 70 are removed, the electrode 50 is exposed, and wiring (not shown) is performed by 3D printing or the like to complete the semiconductor light emitting device panel. If necessary, a part of the fixture 60 may be left.

16 and 17 are diagrams illustrating still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure. After the vertical chip is formed through the step ⑨, the fixture 60 and the carrier 70 are immediately formed. Forming (step VII '), removing the growth substrate 10 (step VII'), then forming additional electrodes 51 (step VII '') and adding additional fixtures 61 and After attaching the carrier 76 (step ′ '″), the fixture 60 and the carrier 70 are removed (step ″ ″), and the electrode 50 is provided with an electrode pad provided on the substrate 80. 81) to complete the semiconductor light emitting device panel.

18 is a view showing another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure, after forming a vertical chip through step ⑨, without the attachment of the fixture 60 and the carrier 70, growth Bonding the electrode 50 and the electrode pad 81 provided on the substrate 80 using the substrate 10 as a carrier (step ″ ″) and removing the growth substrate 10 to complete the semiconductor light emitting device panel. do.

19 is a view illustrating examples of a method for selectively transferring a semiconductor light emitting unit according to the present disclosure. The semiconductor light emitting unit 30 is irradiated with UV by using a carrier 71 on a UV reactive tape or a plate having a UV reactive material attached thereto. ) May be selectively (one, more than one, or all) transferred (a) or using a carrier 73 (eg, a patterned silicon substrate) having a groove 72 that does not touch the semiconductor light emitting portion 30 (b, c), (d) using a carrier 75 (eg, a patterned silicon substrate) having a projection 4 in contact with the semiconductor light emitting portion 30 is possible. Meanwhile, as shown in (e), the carrier 76 is attached to the growth substrate 10 in a state in which the semiconductor light emitting part 30 is not separated, and then the chamber containing the fluid 91 (for example, water) is included. It is possible to cause the growth substrate 10 to be separated due to the difference in the coefficient of thermal expansion between the materials by placing it in the 90 and performing the heating and / or cooling once or several times.

20 is a photograph showing examples of a semiconductor light emitting unit actually grown according to the method shown in FIG. 4.

21 is a diagram illustrating an example of a cross-sectional structure in which a semiconductor light emitting part is grown according to the present disclosure and an example of a cross-sectional structure in which a semiconductor light emitting part is grown using conventional selective growth.

According to the present disclosure, a cross-sectional structure in which a semiconductor light emitting part is grown (upper side; a semiconductor light emitting device wafer) includes a growth prevention film 21 having a growth substrate 10, a buffer layer 20, an opening 22, and a semiconductor light emitting part 30. It includes. It consists of the growth substrate 10-the buffer layer 20-the semiconductor light-emitting part 30 at the point A, and the growth substrate 10-the buffer layer 20-the growth prevention film 21-the semiconductor light-emitting part 30 at the point B. And the growth substrate 10-the buffer layer 20-the growth prevention film 21 at point C.

A cross-sectional structure (lower side; semiconductor light emitting device wafer) in which a semiconductor light emitting part is grown using a conventional selective growth is a growth substrate 10, a buffer layer 20, an additional layer 24 (eg, un-doped GaN or un-doped AlGaN). ), A growth preventing film 21 having an opening 22, and a semiconductor light emitting part 30. Growth substrate 10-buffer layer 20-additional layer 24-semiconductor light emitting portion 30 at point A, and growth substrate 10-buffer layer 20-additional layer 24 at point B ) -Growth prevention film 21-semiconductor light emitting part 30, and it consists of the growth substrate 10-buffer layer 20-additional layer 24-growth prevention film 21 at the C point.

The additional layer 24 has a thickness of about 2 to 5 μm and is introduced to improve the crystallinity of the semiconductor light emitting portion 30 formed thereon. In many patent documents, the buffer layer 20 and the additional layer 24 are bundled and described as the buffer layer 20. In view of the growth temperature, the additional layer 24 is grown at a temperature of about 1000 ° C. On the other hand, depending on the constituent material of the buffer layer 20, it is grown at a temperature of about 500 ° C in the case of GaN and about 600 ° C in the case of AlN. In terms of thickness, the additional layer 24 has a thickness of about 2-5 μm while the buffer layer 20 has a thickness of about 1-100 nm. The buffer layer 20 may be referred to as a seed layer to distinguish it from the additional layer 24.

In addition, from the viewpoint of the growing method, it is common to grow all of the buffer layer 20, the additional layer 24, and the semiconductor light emitting portion 30 through the MOCVD method in a commercial LED, but in the present disclosure, the buffer layer 20 For example, AlN can be grown by sputtering rather than MOCVD, thereby further improving the crystallinity of the semiconductor light emitting portion 30. In the related art, the growth of the buffer layer 20 by sputtering has been proposed, but in the case of using selective growth, introducing it causes problems in the process. That is, the buffer layer 20 is formed by the sputtering method, the additional layer 24 is formed again by the MOCVD method, and then the growth prevention film 21 is formed again by an appropriate technique, and then the semiconductor light emission is performed by the MOCVD method. It is to form a portion (30). In contrast, in the present disclosure, the additional layer 24 is omitted or grown as part of the semiconductor light emitting portion 30, thereby forming the buffer layer 20 between the formation (using the sputtering method) and the formation of the growth prevention film 21. Solving the problem of additional use of the MOCVD method, there is an advantage that can use the sputtering method.

On the other hand, when the additional layer 24 is located between the growth substrate 10 and the growth prevention film 21 throughout the growth substrate 10, the coefficient of thermal expansion of the growth substrate 10 and the additional layer 24 are present. Due to the difference in thermal expansion coefficient of, bowing (curvature) occurs in the growth substrate 10. In the case of a semiconductor light emitting device panel having a micro LED, three micro LEDs are provided in each pixel of the panel, and a precision error of several micrometers is required between the micro LEDs provided in the pixels. If an error occurs more than a predetermined level from the growth of the semiconductor light emitting unit 30, which is an initial stage of fabrication of the semiconductor light emitting device panel, this may have a fatal effect on the fabrication of the semiconductor light emitting device panel. The present disclosure makes it possible to reduce the warpage of the growth substrate 10 resulting from the difference in coefficient of thermal expansion by removing the additional layer 24 between the growth substrate 10 and the growth prevention film 21.

In addition, according to the manufacturing method of the semiconductor light emitting portion shown in FIG. 4, since the semiconductor light emitting portions 30 grown from the respective openings 22 are separated from each other, the semiconductor light emitting portions 30 are formed after the growth is performed. They do not cover the entire growth substrate 10, and therefore, it is possible to reduce the warpage of the growth substrate 10 due to the difference between the thermal expansion coefficient of the growth substrate 10 and the thermal expansion coefficient of the semiconductor light emitting portion 30. Even if it has such a shape, when the width | variety of the semiconductor light-emitting part 30 is larger than 100 micrometers (based on the longest width), the height of the semiconductor light-emitting part 30 will become high with the increase of the width, and therefore the semiconductor light-emitting part 30 ), The warpage of the growth substrate 10 due to the difference in thermal expansion coefficient between the growth substrate 10 and the growth substrate 10 may affect subsequent processes. The present disclosure removes the additional layer 24 between the growth substrate 10 and the growth preventing film 24 and grows each semiconductor light emitting portion 30 spaced apart from each other, thereby making an epitaxial growth method suitable for the fabrication of a micro LED panel. And an epi wafer. Fig. 34A shows the degree of warpage for each case. Based on the sapphire substrate (black solid line; Sapphire Sub.), It can be seen that there is almost no warp in the case where only the AlN buffer layer 20 is grown (red dotted line; Only AlN Seed), and in the case of the method of the present disclosure (blue small Epi on Pattern showed a warpage of about 3.5 μm, and the conventional method (Blue long dotted line; Epi on Planar) showed a warpage of about 53.3 μm.

Meanwhile, when the semiconductor light emitting unit 30 is manufactured by the method shown in FIG. 6, the side surface of the semiconductor light emitting unit 30 may be damaged during dry etching (eg, ICP), and the damage may be caused by the semiconductor. It is known that the smaller the size of the light emitting portion 30 becomes larger (Electro-Optical Size-Dependence Investigation in GaN Micro-LED Devices Anis Daami, Francois Olivier, Ludovic Dupre, Franck Henry and Francois Templier, CEA-LETI Grenoble, France ). This concern can also be reduced by growing the semiconductor light emitting portion 30 by the method shown in FIG.

In the case of using the buffer layer 20 (e.g. AlN) formed by the sputtering method, the crystallinity of the semiconductor light emitting portion 30 grown thereon is determined based on the FWHM values (002) and (x) 102) all were confirmed to be less than 200 arcsec. Comparison data with using the GaN seed layer are shown in FIGS. 34 (b) and 34 (c).

In addition, in the case of the conventional semiconductor light emitting part 30, since an additional layer 24 exists at the point C, a process of separating the growth substrate 10 and the semiconductor light emitting part 30 (for example, CLO (Chemical Lift) In the case of -Off) and LLO (Laser Lift-Off), there is a problem that their separation is not easy, but this problem is solved in the cross-sectional structure (semiconductor light emitting device wafer) according to the present disclosure.

FIG. 22 is a diagram illustrating an example of a detailed structure of a semiconductor light emitting unit according to the present disclosure. The semiconductor light emitting unit 30 may include a first semiconductor layer 31 having a first conductivity (eg, an n-type semiconductor layer (Si-doped GaN). )), An active layer 32 that generates light using recombination of electrons and holes (eg, an InGaN / (In) GaN multiquantum well structure), and a second semiconductor layer 33 having a second conductivity different from the first conductivity. Eg, a p-type semiconductor layer (Mg-doped GaN).

When the active layer 32 and the second semiconductor layer 33 are also formed on the side surface S of the first semiconductor layer 31, the active layer 32 is reduced due to the reduction of the chip size according to the manufacture of the micro LED. It may have the advantage of solving some problems. As shown in FIG. 33 (g), the TEM photograph shows that the active layer 32 is formed on the side surface of the semiconductor light emitting unit 30. The following conditions can be used for its formation.

1) Buffer layer growth conditions: sputtering method, growth temperature 400 ~ 700 ℃, thickness: 1 ~ 100nm, using an Al target, using Ar + N ₂ gas.

2) Growth prevention film production conditions: PECVD, growth temperature: 200 ~ 300 ℃, thickness: 100 ~ 500nm, SiH ₄ + N ₂ O gas is used.

3) Growth conditions of semiconductor light emitting part: MOCVD, conventional semiconductor light emitting part growth method is used, but when using the conventional quantum well growth method, the growth speed in the vertical direction is about 3 times faster, and the growth speed in the lateral direction is It is slower by 20-40%. Taking into account the growth temperature and pressure to form a quantum well.

FIG. 23 is a diagram illustrating various shapes of a semiconductor light emitting part manufactured according to the present disclosure, and has a form of a semiconductor light emitting part 30 in which a first electrode 50 and an additional electrode or a second electrode 51 are formed. This may be referred to as a semiconductor light emitting chip.

In FIG. 23A, the semiconductor light emitting chip includes a semiconductor light emitting part 30, a first electrode 50, and a second electrode 51, and the semiconductor light emitting part 30 includes a first semiconductor layer 31, The active layer 32 and the second semiconductor layer 33 are included. The first electrode 50 is electrically connected to the second semiconductor layer 33, and the second electrode 51 is electrically connected to the first semiconductor layer 31. By removing the second semiconductor layer 33 and the active layer 32 through etching to expose a portion of the first semiconductor layer 31, the second electrode 51 is electrically connected to the first semiconductor layer 31 or Can be contacted.

In FIG. 23B, when the first electrode 50 is widely spread over the second semiconductor layer 33, and the first electrode 50 is configured to include Ag and / or Al to function as a reflective film, It can be attached to a power supply board (eg PCB, TFT Back Plane) in an inverted form. This form is called a flip chip. If necessary, a distributed bragg reflector (eg, SiO ₂ / TiO ₂ multilayer laminate) may be provided between the first electrode 50 and the second semiconductor layer 33.

In FIG. 23C, the second electrode 51 is in electrical contact with the first semiconductor layer 31 on the opposite side of the second semiconductor layer 33 with respect to the active layer 32. The size of the first electrode 50 and the second electrode 51 may vary depending on whether the first electrode 50 is in contact with the power supply substrate or the second electrode 51 is in contact with the power supply substrate. This type of chip is called a vertical chip in terms of current flow.

In FIG. 23D, the first electrode 50 is located on the side of the device. Although the first electrode 50 may function as a reflective film, light may be made of only a light-transmissive material such as indium tin oxide (ITO) to allow light to pass therethrough. Through the necessary chip process, the second electrode 51 may be in contact with the power supply substrate. 33A shows an example of epi form (trapezoidal epi). The cross section is available in various shapes such as square, hexagon, and trapezoid. The first electrode 50 may be formed on the entire second semiconductor layer 33 or may be formed on a part of the second electrode layer 33. That is, when the cross-section of the semiconductor light emitting unit 30 is a polygon, it may be formed on at least one side of the.

In FIG. 23E, a structure in which the second electrode 51 is in electrical contact with the first semiconductor layer 31 on the side opposite to FIG. 23D is shown.

In Fig. 23 (f), the semiconductor light emitting portion 30 includes an additional active layer 32b. This configuration is made possible by exposing the first semiconductor layer 31 in two stages through two etching processes. The third electrode 52 and the fourth electrode 53 are further provided for the emission of the additional active layer 32b. Since the second electrode 51 is provided in the first semiconductor layer 31, the fourth electrode 53 can be omitted. Although the active layer 31 formed on the inclined surface is made of the same material as the additional active layer 32b formed on the upper flat surface, it is known that it can emit light of different wavelengths depending on its growth conditions. Therefore, it is possible to emit light of different wavelengths through one semiconductor light emitting unit 30 (ACS Photonics, 2015, 2 (4), pp 515-520, Red Emission of InGaN / GaN Double Heterostructures on GaN Nanopyramid Structures )).

In Fig. 23G, the semiconductor light emitting portion 30 has a polygonal weight shape (see Fig. 33B).

FIG. 24 is a diagram illustrating still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure, and will be described using the semiconductor light emitting device shown in FIG. 23A as an example.

First, as shown in FIG. 24A, a growth substrate 10 including a semiconductor light emitting unit 30 at a chip level is prepared.

Next, as shown in FIG. 24B, the carrier 71 (see FIG. 19A) is attached to the semiconductor light emitting portion 30, and then the growth substrate 10 is separated from the semiconductor light emitting portion 30. . In the case of using wet etching, the carrier 71 preferably has a plurality of holes 77 so that the etching liquid can easily penetrate through the plurality of holes 77. In the wet etching process, a rough surface (see FIG. 33C) is formed on the bottom surface of the semiconductor light emitting portion 30 (the surface facing the growth substrate 10), and the light generated in the active layer 32 is formed. Scattering contributes to an increase in the external quantum efficiency of the device.

Finally, as shown in FIG. 24C, the semiconductor light emitting unit 30 is attached to the substrate 80 provided with the adhesive (not shown), and the carrier 71 is separated by UV irradiation. For the electrical connection between the substrate 80 and the semiconductor light emitting unit 30, a method such as 3D printing may be used. According to various forms of the semiconductor light emitting unit 30 illustrated in FIG. 23, the attachment method and the method of electrical connection may be changed.

FIG. 25 is a view illustrating still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure, and will be described using the semiconductor light emitting device shown in FIG. 23C as an example. The semiconductor light emitting unit 30 includes only the first electrode 50 in a state where the semiconductor light emitting unit 30 is attached to the growth substrate 10.

25 (a) and 25 (b) are the same as FIGS. 24 (a) and 24 (b).

Next, as shown in FIG. 25C, the semiconductor light emitting part 30 in a state separated from the growth substrate 10 is attached to the additional carrier 79, and then the carrier 71 is irradiated with UV to irradiate the carrier. The 71 is separated from the semiconductor light emitting portion 30. The additional carrier 79 may have the same shape as the carrier 71 (except for the plurality of holes 77).

Next, as shown in FIG. 25 (d), the semiconductor light emitting unit 30 is attached to the substrate 80 using the additional carrier 79, and then the additional carrier 79 is irradiated with UV to emit light. It separates from the part 30.

Finally, as shown in FIG. 25E, the second electrode 51 is formed in the semiconductor light emitting unit 30. The method of attaching and electrically connecting may vary according to various forms of the semiconductor light emitting unit 30 shown in FIG. 23.

FIG. 26 is a diagram illustrating still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure. As shown in FIG. 26A, the semiconductor light emitting unit 30 shown in FIG. 22 is used.

Next, as shown in FIG. 26B, the substrate 60 is provided with the electrode pad 81 in the state in which the fixture 60 is disposed around the semiconductor light emitting portion 30 and the first electrode 50 is positioned thereon. Attach (80).

Next, as shown in FIG. 26C, the growth substrate 10 is separated using a laser.

Next, as shown in FIG. 26D, the second electrode 51 is formed on the first semiconductor layer 31.

Finally, as shown in FIG. 26 (e), the fixture 60 is removed.

FIG. 27 is a view showing another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure, in which at least two kinds of LEDs are provided on one growth substrate 10, and the growth substrate 10 is formed of the LEDs. It is used for growth or for transportation.

First, as shown in Fig. 27A, a semiconductor light emitting part 30B emitting blue light is grown. The semiconductor light emitting part 30B may have the form shown in FIG. 22, and the opening 22 is not formed in the growth preventing film 21 except for a region in which the semiconductor light emitting part 30B is grown. Can be formed.

Next, as shown in Fig. 27B, the semiconductor light emitting part 30G emitting green light is grown. The semiconductor light emitting part 30G may have the form shown in FIG. 22. In the state where the semiconductor light emitting part 30B is covered with a growth preventing material such as SiO ₂ , the semiconductor light emitting part 30G may have an opening in the region where the semiconductor light emitting part 30G is to be grown. By forming 22, the semiconductor light emitting portion 30G can be grown. By adjusting the amount of indium (In) used in the active layer 32 (InGaN / (In) GaN quantum well structure), it is possible to emit blue or green light. In addition, the first semiconductor layer 31 is grown in a state in which the growth prevention film 21 is formed with the opening 22 for growth of the semiconductor light emitting portion 30B and the semiconductor light emitting portion 30G. Through this, it is also possible to complete the semiconductor light emitting portion 30B and the semiconductor light emitting portion 30G, respectively. In this case, thermal damage of the active layer forming the semiconductor light emitting portion 30G can be reduced.

Next, as shown in FIG. 27C, the semiconductor light emitting part 30R emitting red light may be brought to the growth substrate 10. This can be done in a state where the growth prevention film 21 is removed. It is also possible, but not desirable, to bring the semiconductor light emitting portion 30R onto the growth substrate 10 and grow the semiconductor light emitting portion 30B and the semiconductor light emitting portion 30G while being covered with a growth material such as SiO ₂ . It is also possible to bring the semiconductor light emitting portion 30B or the semiconductor light emitting portion 30G without growing it, but this is not preferable in view of accuracy. It is also possible to grow the semiconductor light emitting portion 30R on the growth substrate 10, but it is not preferable in consideration of materials (for example, InP and GaAs) constituting the semiconductor light emitting portion 30R and the growth conditions thereof. On the other hand, as described above, in the structure of the semiconductor light emitting portion 22 shown in Figure 22, it is known that it is possible to emit red light in the active layer 32 formed on the side of the semiconductor light emitting portion 22, but it is still in the commercialization stage It is not early. Although it is possible to grow the semiconductor light emitting portion 30G before the semiconductor light emitting portion 30B, this is not preferable.

Finally, as shown in FIG. 27 (d), after the necessary chip process is performed, the semiconductor light emitting device panel can be manufactured by attaching to the substrate 80 and removing the growth substrate 10. Through this process, despite the manufacturing of the panel at the micro LED level, it is possible to reduce the error generated in the space (space) between the semiconductor light emitting portions (30B, 30G, 30R). It is also possible to cut and use the growth substrate 10 in accordance with the specification.

On the other hand, as shown in FIG. 27E, the semiconductor light emitting portion 30B and the semiconductor foot 30BR are grown on the growth substrate 10. The semiconductor light emitting portion 30B and the semiconductor light emitting portion 30BR emit light of blue in the same manner, but as described later, the light is excited by the semiconductor light emitting portion 30BR and emits red light in the semiconductor light emitting portion 30BR. A conversion material 30P (eg phosphor, quantum dot) is additionally applied.

Next, as shown in Fig. 27F, the semiconductor light emitting part 30G emitting green light is grown.

Next, as shown in FIG. 27G, the light conversion material 30P is applied to the semiconductor light emitting unit 30BR.

Lastly, as shown in FIG. 27 (h), after the necessary chip process has been performed, the semiconductor light emitting device panel can be manufactured by attaching to the substrate 80 and removing the growth substrate 10. Also in the configuration of the semiconductor light emitting portion 30G, the semiconductor light emitting portion 30B is grown, and then the light emitting member 30G is applied by applying a light conversion member excited to blue emitted from the semiconductor light emitting portion 30B and emitting green color. It is possible to make It is also possible to use the semiconductor light emitting portion 30G for the light conversion material 30P. By using the method shown in Figs. 27 (e) to 27 (h), the lithography process when an error in the position of the semiconductor light emitting portions 30B, 30G, 30BR forms the opening 22 in the growth prevention film 21 The error range is reduced, so that the error range required for each pixel of the panel using the micro LED can be satisfied. Furthermore, the present disclosure can reduce the warpage of the growth substrate 10 caused by the difference in thermal expansion coefficient between the growth substrate 10 and the semiconductor light emitting portion 30 by using the epi wafer structure as shown in FIG. While removing the error in the process of, while transferring the semiconductor light emitting portion 30 to the carrier 70 and / or the substrate 80 can reduce the error due to the bending of the growth substrate 10, using a micro LED The error range required for each pixel of the panel can be satisfied. That is, in the past, there are many examples in which LEDs emitting different colors are grown on one growth substrate 10. However, as described above, when the conventional epitaxial growth technique is used, micro LEDs may be formed due to warpage of the growth substrate. It was not easy to meet the tolerances required for each pixel of the panel used.

FIG. 28 is a view showing another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure. As shown in FIG. 28 (a), a semiconductor light emitting part is formed on the substrate 80 in the state shown in FIG. 27 (b). Attach (30B, 30G).

Next, as shown in FIG. 28B, the semiconductor light emitting unit 30R is attached to the substrate 80 using the substrate 11, and the necessary chip process is subsequently performed.

Meanwhile, as shown in FIG. 28C, the semiconductor light emitting units 30B, 30G, and 30BR are attached to the substrate 80 in the state shown in FIG. 27F.

Next, as illustrated in FIG. 28D, the light conversion member 30P may be applied to the semiconductor light emitting unit 30BR, and the necessary chip process may be subsequently performed.

FIG. 29 is a view illustrating still another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure. The method of forming the semiconductor light emitting units 30B, 30G, and 30R is the same as that of FIG. 27, but the growth substrate 10 is formed. An electronic device such as a switch (eg, HEMT, BJT, MESFET) and / or an ESD protection diode that drives the semiconductor light emitting units 30B, 30G, and 30R is added thereto.

First, as shown in FIGS. 29A and 29B, the semiconductor light emitting units 30B and 30G are grown.

Next, as shown in FIG. 29 (c), the epitaxial structure 30D for electronic devices is grown using an epitaxial growth method such as MOCVD. 35 illustrates an example of a transistor formed on the growth substrate 10, the buffer layer 20, and the growth prevention film 21. The lower part of the epitaxial structure 30D for the electronic device has the same structure as the lower part of the semiconductor light emitting part 30 shown in FIG. 22, so that the lower part of the epitaxial structure 30D may be easily separated from the growth substrate 10. Of course, you can reduce the whip. An example of an epitaxial structure 30D for an electronic device is illustrated in FIG. 33 (d).

Next, as shown in Fig. 29D, the semiconductor light emitting portion 30R is brought. The order of forming the semiconductor light emitting units 30B, 30G, and 30R and the order of forming the epitaxial structure 30D for the electronic device may be changed.

Finally, as shown in FIG. 29 (e), the epitaxial structure 30D for the electronic device is etched into the switches 30BT, 30GT, and 30RT for each of the semiconductor light emitting units 30B, 30G, and 30R. W).

As shown in Figs. 29 (f) and 29 (g), the switches 30BT, 30GT, and 30RT are formed (grown or brought) immediately without making the epitaxial structure 30D for the electronic device, and the wiring W Can also be performed.

By taking this form, the growth substrate 10 itself having the semiconductor light emitting units 30B, 30G, and 30R and the switches 30BT, 30GT, and 30RT is used as a display, or the substrate (using the growth substrate 10) is used. 80) can be used.

30 is a diagram illustrating an example of a method of manufacturing a carrier according to the present disclosure.

First, as shown in FIG. 30A, the semiconductor layer 30S is grown on the growth substrate 10S for producing a carrier. An example of the semiconductor layer 30S grown on the growth substrate 10S is shown in FIG. 33E. At this time, a part of the semiconductor layer 30S may be formed in another shape (for example, a cross shape) and used as the alignment key 30A. The shape of the alignment key 30A may be adjusted by changing the shape of the opening 22 in the growth prevention film 21 or by etching after growth. For example, four alignment keys 30A may be formed near the edge of the growth substrate 10 at an angle of 90 °.

Next, as shown in FIG. 30 (b), a carrier 70S provided with an engraving material S is prepared.

Next, as shown in FIG. 30C, the intaglio S is pressed onto the growth substrate 10S on which the semiconductor layer 30S is grown.

In the case where the intaglio material S is a UV curable material, as shown in FIG. 30 (d), the shape of the semiconductor layer 30S imprinted on the intaglio material S by irradiation with UV is used, that is, the shape of the opening 70H. I can fix it. In this case, the carrier 70S may be made of a light transmissive material (eg, plastic or glass). In the case where the semiconductor layer 30S includes the alignment key 30A, the opening 70H also includes the alignment opening 70A. An example of the opening 70H is shown in FIG. 33 (f) with a photograph.

By manufacturing the carrier 70S in this manner, the advantages of the size of the plurality of openings 70H provided in the carrier 70S and the spacing therebetween can be formed with an error within an error range occurring in the process of epi growth. Will have

Next, as shown in Fig. 30 (e), the adhesive 70P is applied.

Next, as shown in FIG. 30 (f), the semiconductor light emitting portion 30B is brought into the opening 70H of the carrier 70S by using the growth substrate 10. Preferably, the growth substrate 10 is also provided with an alignment key 30A, and the alignment key 30A is fitted into the alignment opening 70A of the carrier 70S, whereby the growth substrate 10 and the carrier 70S are provided. ) May be aligned. On the other hand, the opening 70H is formed slightly larger than the semiconductor light emitting portion 30B so that the semiconductor light emitting portion 30B can be located, which is the size of the semiconductor layer 30S of the growth substrate 10S for carrier fabrication. It becomes possible by forming slightly larger than the magnitude | size of the part 30B.

Next, as shown in FIG. 30G, the growth substrate 10 is removed, and then the semiconductor light emitting portion 30B placed on the carrier 70S is brought to the substrate 80. In the case where the adhesive 70P loses its adhesion when irradiated with UV, the carrier 70S can be separated from the semiconductor light emitting portion 30B by irradiating UV. By transferring the semiconductor light emitting portion 30B to a carrier 70S having an error of the degree generated in the epitaxial growth process, and then transferring the semiconductor light emitting portion 30B to the substrate 80 using the carrier 70S, The errors in the process can be significantly reduced.

Finally, as shown in FIG. 30 (h), it is possible to position the semiconductor light emitting portions 30G and 30R on the substrate 80 in the same manner.

31 is a view showing another example of a method of manufacturing a semiconductor light emitting device panel according to the present disclosure, to manufacture a semiconductor light emitting device panel using a permanent magnet and an electromagnet.

First, as shown in FIG. 31 (a), the first electrode 50M is formed in the semiconductor light emitting part 30B, but is preferably formed to include ferro-magnetic materials (eg, Fe, Ni, Co).

Next, as shown in Fig. 31B, the semiconductor light emitting portion 30B is attached to the carrier 70S. An adhesive 70P may be used to fix the semiconductor light emitting portion 30B. Carrier 70S is not particularly limited, but, for example, carrier 70S of the type shown in FIG. 30 may be used.

Next, as shown in FIG. 31C, the growth substrate 10 is removed.

Next, as shown in Fig. 31 (d), the electromagnet 70E is placed on the carrier 70S side.

Next, as in FIG. 31 (e), as in FIG. 30 (h), UV is irradiated to release the adhesive force by the adhesive 70P between the carrier 70S and the semiconductor light emitting portion 30B. However, the semiconductor light emitting portion 30B is kept fixed to the carrier 70S by the electromagnet 70E.

Next, as shown in Fig. 31 (f) and Fig. 31 (g), the carrier 10M having the permanent magnet 30M is placed in the semiconductor light emitting portion 30B, and then the magnetic force of the electromagnet 70E is released. After that, the semiconductor light emitting portion 30B is separated from the carrier 70S by using the carrier 10M. Although the shape of the permanent magnet 30M is not particularly limited, by using the method shown in FIG. 32, the scale of the permanent magnet 30M can be easily matched with the scale of the semiconductor light emitting portion 30B.

 Next, as shown in Figs. 31H and 31I, after placing the semiconductor light emitting portion 30B on the substrate 80 provided with the electromagnet 70E, the carrier 10M is connected to the semiconductor light emitting portion ( 30B). At this time, the magnetic force generated by the electromagnet 70E is greater than the magnetic force of the permanent magnet 30M, so that the carrier 10M may be separated from the substrate 80 while the semiconductor light emitting part 30B is fixed to the substrate 80. Of course, the above-described methods may be used for physical coupling and electrical coupling of the semiconductor light emitting unit 30B and the substrate 80.

Finally, as in FIG. 31 (j), it is possible to position the semiconductor light emitting portions 30G and 30R on the substrate 80 in the same manner.

Meanwhile, in FIG. 31, although the carrier 70S is used to move the semiconductor light emitting part 30B to the substrate 80, the carrier 10M is directly used without using the carrier 70S according to the shape of the chip. After attaching to the semiconductor light emitting portion 30B on the growth substrate 10, the growth substrate 10 may be removed, and then the semiconductor light emitting portion 30B may be transferred to the substrate 80.

32 is a view illustrating an example of a method of making a permanent magnet 30M according to the present disclosure, wherein the first electrode 50M is formed in the semiconductor light emitting unit 30M in the same manner as in FIG. Preferably it is formed to include a ferro-magnetic material (eg Fe, Ni, Co). Next, as shown in FIG. 32, it is possible to make the carrier 10M provided with the permanent magnet 30M by quenching after applying heat below the Curie temperature in the state in which the magnetic field is caught. In the process of FIGS. 30 to 32, preferably, the growth substrate 10, the carrier 70S, the carrier 10M all have the alignment key 30A and the alignment opening 70A shown in FIG. It is possible to reduce the alignment error of the liver. The interval between the semiconductor light emitting units 30M may vary depending on the number of semiconductor light emitting units 30B (see FIG. 31) to be transferred, the shape of the substrate 80, and the like.

By using the epi wafers 10 and 30 shown in FIG. 4, the epi stamps 10S and 30S shown in FIG. 30, and the epi carriers 10M, 30M and 50M shown in FIG. The panel can be manufactured. That is, all errors occurring in the process are reduced to the range of errors occurring in epi growth. More precisely, a pattern is given by the growth prevention film 21 in the epi wafers 10 and 30, and in the case of the epi carriers 10M, 30M and 50M, the growth prevention film 21 of the epi wafers 10 and 30. The same pattern as, but a slightly larger pattern is used, the epi-carrier (10M, 30M, 50M) selectively transports the semiconductor light emitting portion 30 of the epi wafer (10, 30), so that the epi wafer (10,30) The same pattern as that of the growth prevention film 21 of Fig. 3), but a pattern in which part is blocked is used.

Further, by using the structure shown in FIG. 22, the warpage of the growth substrate 10 is reduced, and as the size of the chip is reduced, the effect of damage to the side of the chip due to dry etching (eg, ICP) is largely prevented. In addition, despite the formation of the buffer layer 20 by the sputtering method, it is possible to reduce the addition of the process, and to remove the buffer layer 20 using wet etching, thereby reducing the enormous cost of LLO.

36 is a view showing another example of a method for manufacturing a carrier according to the present disclosure, in which a growth substrate 10S for producing a carrier serves as a carrier 70S.

First, as shown in Fig. 36A, a growth prevention film 21S is formed on the growth substrate 10S. In this case, the growth prevention layer 21S may have a shape shown in FIG. 33A. That is, the growth prevention film 21S has the shape of the semiconductor light emitting portion shown in FIG. 20.

Next, as shown in Fig. 36B, the semiconductor layer 30S is grown. This may have the same structure as that of the semiconductor light emitting portion 30, or may simply be formed of a nitride semiconductor such as GaN.

Finally, as shown in Fig. 36C, the growth prevention film 21S is removed. The semiconductor layer 30S from which the growth prevention film 21S is removed has the form shown in FIG. 33 (f), and functions as a carrier having the opening 30H having the same shape as the opening 70S shown in FIG. 30. By using such carriers 10S and 30S, a carrier made of the same material as that of the epi wafers 10 and 30 can be used, and thus the same behavior can be achieved for thermal and mechanical deformations generated in various processes. It has the advantage of reducing

FIG. 37 is a view showing an example using the carrier shown in FIG. 36. The opening 30S is formed to be slightly smaller than the size of the semiconductor light emitting portion 30 to be transferred, whereby the semiconductor light emitting portion 30 is formed in the opening 30S. It shows an example of being transported in the fitted state. The size of the opening 30S may be larger than that of the semiconductor light emitting part 30.

Hereinafter, various embodiments of the present disclosure will be described.

(1) A method of manufacturing a semiconductor light emitting device panel, comprising: forming a removal layer on a growth substrate; Growing a semiconductor light emitting part on the removal layer; Separating the semiconductor light emitting part into a growth substrate, wherein the semiconductor light emitting part is separated into a plurality of semiconductor light emitting parts, and a part of the removing layer between the growth substrate and each semiconductor light emitting part is removed so that a plurality of the removing layers remain. Separating the semiconductor light emitting portion from the growth substrate; and attaching the semiconductor light emitting portion to the substrate so as to conduct some or all of the plurality of semiconductor light emitting portions.

(2) prior to separating, surrounding the plurality of semiconductor light emitting units using a fixture on the growth substrate, wherein the plurality of semiconductor light emitting units are separated from the growth substrate in a state of being fixed to the fixture, and fixed to the fixture. A method of manufacturing a semiconductor light emitting device panel, characterized in that attached to the substrate in a state.

(3) removing the fixture, the method of manufacturing a semiconductor light emitting device panel further comprising.

(4) A method of manufacturing a semiconductor light emitting device panel, wherein in the growing step, a plurality of semiconductor light emitting portions are partially grown on a growth substrate.

(5) prior to the step of attaching, attaching a carrier to the fixture; manufacturing method of a semiconductor light emitting device panel comprising a.

(6) A method of manufacturing a semiconductor light emitting device panel, wherein in the attaching step, a carrier for selectively transferring a plurality of semiconductor light emitting units is used.

(7) A method of manufacturing a semiconductor light emitting device panel, wherein in the separating step, the plurality of semiconductor light emitting parts are separated from the growth substrate by using a difference in thermal expansion coefficients of the removal layer and the growth substrate.

(8) A method of manufacturing a semiconductor light emitting device panel, wherein the removing layer is formed in contact with the growth substrate.

(9) prior to attaching, forming an additional electrode in each semiconductor light emitting portion.

(10) forming an additional fixture on an additional electrode side; further comprising a method for manufacturing a semiconductor light emitting device panel.

(11) A wafer for semiconductor light emitting device, comprising: a growth substrate; A buffer layer formed on the growth substrate; A growth prevention film formed over the buffer layer and having a plurality of openings, the growth prevention film having a longest width of each opening of 100 µm or less; A plurality of semiconductor light emitting parts grown from a buffer layer in each opening and spaced apart from each other; a plurality of semiconductor light emitting parts having a longest width of each semiconductor light emitting part of 100 μm or less; wafer.

(12) A wafer for a semiconductor light emitting device, characterized in that the buffer layer is a nitride which can be removed by wet etching.

(13) A wafer for semiconductor light emitting element, wherein the buffer layer is made of AlN.

(14) Each semiconductor light emitting portion is interposed between a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a first semiconductor layer and a second semiconductor layer, A semiconductor light emitting device wafer comprising an active layer for generating light using recombination, wherein a second semiconductor layer surrounds the first semiconductor layer.

(15) A wafer for semiconductor light emitting element, characterized in that the active layer is divided into two through etching.

(16) A wafer for semiconductor light emitting elements, characterized in that the plurality of semiconductor light emitting portions includes a semiconductor light emitting portion for emitting blue light and a semiconductor light emitting portion for emitting green light.

(17) A wafer for semiconductor light emitting device, characterized in that the plurality of semiconductor light emitting portions includes a semiconductor light emitting portion including a light conversion material emitting red light.

(18) A wafer for a semiconductor light emitting device, comprising: an epitaxial structure for an electronic device formed on the growth substrate and interlocked with each semiconductor light emitting unit.

(19) A wafer for semiconductor light emitting element, characterized in that the plurality of semiconductor light emitting portions includes at least one semiconductor light emitting portion functioning as an alignment key.

(20) Each semiconductor light emitting portion includes an electrode, and the electrode comprises a ferromagnetic material.

(21) A wafer for semiconductor light emitting element, wherein each semiconductor light emitting portion is a permanent magnet.

(22) a wafer for semiconductor light emitting device; And a carrier for transferring a plurality of semiconductor light emitting portions of the wafer, the method comprising the steps of: manufacturing a carrier; And transferring a plurality of semiconductor light emitting units by using a carrier, wherein the carrier includes a growth substrate and a plurality of semiconductor layers grown on the growth substrate, and the size of each of the plurality of semiconductor layers is a plurality of semiconductor light emitting units. A method for manufacturing a semiconductor light emitting device panel, characterized in that larger than each size.

10: growth substrate, 30: semiconductor light emitting portion, 50: electrode, 60: fixture, 70: carrier, 80: substrate

Claims (12)

In a wafer for semiconductor light emitting elements,
Growth substrates;
A buffer layer formed on the growth substrate;
A growth prevention film formed on the buffer layer and having a plurality of numbers, the growth prevention film having a longest width of each opening of 100 µm or less;
A plurality of semiconductor light emitting parts grown from a buffer layer in each opening and spaced apart from each other; a plurality of semiconductor light emitting parts having a longest width of each semiconductor light emitting part of 100 μm or less; wafer. The method according to claim 1,
The buffer layer is a semiconductor light emitting device wafer, characterized in that the nitride can be removed through wet etching. The method according to claim 1 or 2,
The buffer layer is a semiconductor light emitting device wafer, characterized in that made of AlN. The method according to claim 1,
Each semiconductor light emitting portion is interposed between a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and a first semiconductor layer and a second semiconductor layer to utilize recombination of electrons and holes. It includes an active layer that generates the lowering light,
A semiconductor light emitting device wafer, wherein the second semiconductor layer surrounds the first semiconductor layer. The method according to claim 4,
A wafer for a semiconductor light emitting device, characterized in that the active layer is divided into two through etching. The method according to claim 1,
A plurality of semiconductor light emitting units comprising a semiconductor light emitting unit for emitting blue light and a semiconductor light emitting unit for emitting green light. The method according to claim 6,
A semiconductor light emitting device wafer, characterized in that the plurality of semiconductor light emitting units includes a semiconductor light emitting unit including a light conversion material emitting red light. The method according to claim 1,
A wafer for a semiconductor light emitting device, comprising: an epitaxial structure for an electronic device formed on the growth substrate and interlocked with each semiconductor light emitting unit. The method according to claim 1,
And a plurality of semiconductor light emitting units comprising at least one semiconductor light emitting unit functioning as an alignment key. The method according to claim 1 or 9,
Each semiconductor light emitting portion has an electrode,
Wafer for semiconductor light emitting device, characterized in that the electrode comprises a ferromagnetic material. The method according to claim 10,
A semiconductor light emitting device wafer, wherein each semiconductor light emitting portion is a permanent magnet. A wafer for semiconductor light emitting elements according to claim 1 or 11; And a carrier for transferring a plurality of semiconductor light emitting portions of the wafer.
Manufacturing a carrier; And,
And transferring a plurality of semiconductor light emitting units by using a carrier.
The carrier comprises a growth substrate and a plurality of semiconductor layers grown on the growth substrate, wherein the size of each of the plurality of semiconductor layers is larger than the size of each of the plurality of semiconductor light emitting portions.

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