CN205692861U - A kind of UV LED encapsulating structure - Google Patents
A kind of UV LED encapsulating structure Download PDFInfo
- Publication number
- CN205692861U CN205692861U CN201620592366.7U CN201620592366U CN205692861U CN 205692861 U CN205692861 U CN 205692861U CN 201620592366 U CN201620592366 U CN 201620592366U CN 205692861 U CN205692861 U CN 205692861U
- Authority
- CN
- China
- Prior art keywords
- encapsulating structure
- bowl
- led
- led encapsulating
- support
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005538 encapsulation Methods 0.000 claims abstract description 24
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 230000005496 eutectics Effects 0.000 claims abstract description 16
- 239000013078 crystal Substances 0.000 claims description 16
- 238000010276 construction Methods 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 230000001681 protective effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000010931 gold Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000035882 stress Effects 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Led Device Packages (AREA)
Abstract
The utility model discloses a kind of UV LED encapsulating structure, including: ceramics bracket, Al bowl, LED chip and encapsulation cover body, it is formed with circuit on described support, described LED chip is fixed on support and is electrically connected with the circuit on support, described Al bowl is surrounded on described LED chip, described encapsulation cover body is arranged on LED chip, and is connected with described Al bowl upper surface by Eutectic Layer, and described support is connected with described Al bowl lower surface by Eutectic Layer.
Description
Technical field
This utility model relates to a kind of LED encapsulation technology, particularly to a kind of UV LED device encapsulation structure.
Background technology
Light emitting diode (English abbreviation LED), is a kind of solid semiconductor luminescent device.Along with the development of LED technology,
The encapsulation wave band of LED gradually develops toward near ultraviolet even deep ultraviolet direction.Deep ultraviolet (english abbreviation is DUV) LED becomes at present
Industry important research focus, domestic and international many companies also put into research and development.Existing DUV LED encapsulation structure is typically with pottery
Frame, the inorganic material encapsulation of rack surface plating Au.But Au is at the reflectance of deep ultraviolet the lowest (about 40%), therefore has a strong impact on
The luminosity of packaging.
Summary of the invention
The purpose of this utility model is: provide a kind of UV LED encapsulating structure, to overcome existing ultraviolet to send out
Optical diode device plates, at rack surface, the problem that Au reflectance is relatively low, increases the emitting brightness of device.
For achieving the above object, this utility model provides a kind of package structure for LED, including: ceramics bracket,
Al bowl, LED chip and encapsulation cover body, described support is formed circuit, described LED chip be fixed on support and with
Circuit on frame is electrically connected with, and described Al bowl is surrounded on described LED chip, and described encapsulation cover body is arranged on LED chip,
And be connected with described Al bowl upper surface by Eutectic Layer, described support is connected with described Al bowl lower surface by Eutectic Layer
Connect.
Preferably, described Al bowl inwall forms protective clear layer.
Preferably, the upper surface of described Al bowl forms thin-wall construction, ring-type in groove.
Preferably, the lower surface of described Al bowl forms thin-wall construction, ring-type in groove.
Preferably, described Eutectic Layer is only located on described thin-wall construction, is not filled with in described groove.
Preferably, described encapsulation cover body is lens or cover plate.
Preferably, the circuit described support formed is for using metal level as wire.
Preferably, definition is crystal bonding area for fixing the stent area of LED chip, and other region is non-crystal bonding area, described
Crystal bonding area is slightly above non-crystal bonding area, prevents from being in the light.
Preferably, described non-crystal bonding area forms reflecting layer.
Preferably, described reflecting layer is Al metal or Ag metal or distributed Bragg reflecting layer.
Compared with prior art, the UV LED encapsulating structure that this utility model provides, at least include following skill
Art effect: the temperature tolerance of ceramics bracket is better than plastic stent, due to the electric light transformation efficiency of DUV LED the lowest (general < 10%),
Generating heat more, therefore temperature tolerance is critically important, uses ceramics bracket not have problem of aging, thus increases the service life, improves envelope
The reliability of dress device；With existing UV LED device rack surface plating Au reflectance relatively low compared with, use Al bowl
Cup, as reflecting layer, can increase emitting brightness；The up/down surface of Al bowl forms thin-wall construction, ring-type in groove, thus subtracts
Few with encapsulation cover body, the contact area of support, reduce encapsulation cover body and do not mate with the thermal coefficient of expansion (CTE) of ceramics bracket and cause
Stress；Additionally, the Al material in Al bowl is softer, stress can be discharged by deformation by thin-wall construction, thus effectively solve
Encapsulation cover body and the unmatched problem of CTE of ceramics bracket.
Other features and advantages of the utility model will illustrate in the following description, and, partly from description
In become apparent, or by implement this utility model and understand.The purpose of this utility model and other advantages can be passed through
Structure specifically noted in description, claims and accompanying drawing realizes and obtains.
Accompanying drawing explanation
Accompanying drawing is used for providing being further appreciated by of the present utility model, and constitutes a part for description, with this practicality
Novel embodiment is used for explaining this utility model together, is not intended that restriction of the present utility model.Additionally, accompanying drawing data are
Describe summary, be not drawn to scale.
Fig. 1 is the ultraviolet LED encapsulating structure schematic diagram of embodiment 1.
Fig. 2 is the ultraviolet LED encapsulating structure schematic diagram of embodiment 2.
In figure, each label indicates as follows:
100: ceramics bracket；101: metal level；102: metallic reflector；200:Al bowl；201: protective clear layer；202、
203: thin-wall construction；300:LED chip；400: encapsulation cover body；500,501: Eutectic Layer.
Detailed description of the invention
Below in conjunction with schematic diagram, ultraviolet LED encapsulating structure of the present utility model is described in detail, is being situated between further
Continue before this utility model, it will be appreciated that owing to can transform specific embodiment, therefore, this utility model is not
It is limited to following specific embodiment.It is also understood that owing to scope of the present utility model is only defined by the following claims, therefore
The embodiment used is introductory rather than restrictive.Unless otherwise stated, used herein of all technology
The same meaning being commonly understood by with those of ordinary skill in the art with scientific words.
Embodiment 1
As it is shown in figure 1, the UV LED encapsulating structure that the present embodiment provides, including: plane ceramic support 100,
Al bowl 200, LED chip 300 and encapsulation cover body 400, ceramics bracket 100 is formed circuit, and LED chip 300 is fixed on
Being electrically connected with on ceramics bracket and with the circuit on support, Al bowl 200 is surrounded on LED chip 300, and encapsulation cover body 400 is arranged
On LED chip 300, and being connected with Al bowl 200 upper surface by Eutectic Layer 500, ceramics bracket 100 passes through Eutectic Layer
501 are connected with Al bowl 200 lower surface.
Owing to the electric light transformation efficiency (English full name is wall-plug efficiency, is called for short WPE) of DUV LED is the lowest
(general < 10%), generates heat more, and therefore support temperature tolerance is critically important, and the temperature tolerance of ceramics bracket is better than plastic stent, therefore this
Embodiment support Ceramics material.Compared with plastic rubber bracket, owing to DUV radiation can make plastic stent aging, turn yellow even
Cracking, and use ceramics bracket not have problem of aging, thus increase the service life, improve the reliability of packaging.
With existing UV LED device rack surface plating Au reflectance relatively low compared with, the present embodiment use Al bowl
Cup, can be by being Computer numerical control with CNC(English full name 200 as reflecting layer) process or rush
The perforate on Al sheet of the methods such as pressure is formed, and in order to increase emitting brightness, Al sheet thickness is preferably between 0.2 ~ 1.5mm.
The present embodiment forms protective clear layer at Al bowl inwall, and material can select SiO2Or MgF2, it is used for protecting Al gold
Belong to reflecting layer, stop that Al activity is higher is oxidized easily.
Preferred Au or Ag of Eutectic Layer material of the present embodiment or AuSn alloy, thickness between 0.1 ~ 5 μm, wherein eutectic
Layer 500 is used for connecting encapsulation cover body 400 and Al bowl 200 upper surface, Eutectic Layer 501 be used for connecting Al bowl 200 lower surface with
Ceramics bracket 100, so realizes can hermetic being connected as one with ceramics bracket by encapsulation cover body by Eutectic Layer, thus
Promote air-tightness and the reliability of UV LED structure after encapsulating.
The circuit that the present embodiment is formed on ceramics bracket can also pass through as wire, metal level for using metal level 101
Be through in ceramics bracket, it is simple to circuit configuration be connected.
As it is shown in figure 1, definition is crystal bonding area for fixing the stent area of LED chip, other region is non-crystal bonding area, excellent
Be selected in position, ceramics bracket crystal bonding area and arrange a slightly protruding metal platform (such as Cu, Au), i.e. crystal bonding area is slightly above non-crystal bonding area,
Prevent from being in the light.Additionally, surface configuration reflecting layer, non-crystal bonding area, such as Ag, Al metallic reflector, or non-metallic reflective layer, such as distribution
Bragg reflecting layer (DBR), to reduce the extinction amount of ceramics bracket, increases luminous efficiency.
Encapsulation cover body 400, can select lens or cover plate, and the cover plate of the present embodiment preferred quartz glass material is as envelope
Dress cover body.
Embodiment 2
As in figure 2 it is shown, the present embodiment is with embodiment 1 difference: the upper surface of Al bowl 200 of this enforcement, lower surface
Form thin-wall construction 202,203 respectively, ring-type in groove；Eutectic Layer 500,501 is only located on thin-wall construction, but is not filled with in recessed
Groove, so can reduce Al bowl and encapsulation cover body, the contact area of ceramics bracket, reduce encapsulation cover body and ceramics bracket
CTE does not mate the stress caused.Additionally, due to the Al material in Al bowl is softer, can be discharged by deformation by thin-wall construction
Stress, thus effectively solve the unmatched problem of CTE of package body and support.
It should be appreciated that above-mentioned specific embodiments is only part preferred embodiment of the present utility model, above enforcement
Example can also carry out various combination, deformation.Scope of the present utility model is not limited to above example, all is done according to this utility model
Any change, within all belonging to protection domain of the present utility model.
Claims (10)
1. a UV LED encapsulating structure, including: ceramics bracket, Al bowl, LED chip and encapsulation cover body, institute
Stating and be formed with circuit on support, described LED chip is fixed on support and is electrically connected with the circuit on support, described Al bowl
Being surrounded on described LED chip, described encapsulation cover body is arranged on LED chip, and by Eutectic Layer and table in described Al bowl
Face is connected, and described support is connected with described Al bowl lower surface by Eutectic Layer.
A kind of UV LED encapsulating structure the most according to claim 1, it is characterised in that: described Al bowl inwall
Form protective clear layer.
A kind of UV LED encapsulating structure the most according to claim 1, it is characterised in that: described Al bowl upper
Surface forms thin-wall construction, ring-type in groove.
A kind of UV LED encapsulating structure the most according to claim 1, it is characterised in that: under described Al bowl
Surface forms thin-wall construction, ring-type in groove.
5. according to a kind of UV LED encapsulating structure described in claim 3 or 4, it is characterised in that: described Eutectic Layer
It is only located on described thin-wall construction, is not filled with in described groove.
A kind of UV LED encapsulating structure the most according to claim 1, it is characterised in that: described encapsulation cover body is
Lens or cover plate.
A kind of UV LED encapsulating structure the most according to claim 1, it is characterised in that: formed on described support
Circuit for use metal level as wire.
A kind of UV LED encapsulating structure the most according to claim 1, it is characterised in that: definition is used for fixing
The stent area of LED chip is crystal bonding area, and other region is non-crystal bonding area, and described crystal bonding area is slightly above non-crystal bonding area, anti-backstop
Light.
A kind of UV LED encapsulating structure the most according to claim 8, it is characterised in that: in described non-crystal bonding area
Upper formation reflecting layer.
A kind of UV LED encapsulating structure the most according to claim 9, it is characterised in that: described reflecting layer is
Al metal or Ag metal or distributed Bragg reflecting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620592366.7U CN205692861U (en) | 2016-06-17 | 2016-06-17 | A kind of UV LED encapsulating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620592366.7U CN205692861U (en) | 2016-06-17 | 2016-06-17 | A kind of UV LED encapsulating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205692861U true CN205692861U (en) | 2016-11-16 |
Family
ID=57415924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620592366.7U Active CN205692861U (en) | 2016-06-17 | 2016-06-17 | A kind of UV LED encapsulating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN205692861U (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
| CN108933185A (en) * | 2017-05-26 | 2018-12-04 | 黄国益 | Support construction uses its light emitting device and its processing method |
| CN113036024A (en) * | 2021-05-24 | 2021-06-25 | 至芯半导体(杭州)有限公司 | Ultraviolet light-emitting diode packaging structure |
| CN113394320A (en) * | 2020-03-11 | 2021-09-14 | 隆达电子股份有限公司 | Light emitting diode packaging structure |
-
2016
- 2016-06-17 CN CN201620592366.7U patent/CN205692861U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933185A (en) * | 2017-05-26 | 2018-12-04 | 黄国益 | Support construction uses its light emitting device and its processing method |
| CN108933185B (en) * | 2017-05-26 | 2021-01-05 | 黄国益 | Support structure, light emitting device using the same, and method of processing the same |
| CN108321283A (en) * | 2018-04-03 | 2018-07-24 | 江苏鸿利国泽光电科技有限公司 | A kind of package support and its packaging method of specular removal ultraviolet LED |
| CN113394320A (en) * | 2020-03-11 | 2021-09-14 | 隆达电子股份有限公司 | Light emitting diode packaging structure |
| US11670748B2 (en) | 2020-03-11 | 2023-06-06 | Lextar Electronics Corporation | LED package structure |
| CN113036024A (en) * | 2021-05-24 | 2021-06-25 | 至芯半导体(杭州)有限公司 | Ultraviolet light-emitting diode packaging structure |
| CN113036024B (en) * | 2021-05-24 | 2021-08-10 | 至芯半导体(杭州)有限公司 | Ultraviolet light-emitting diode packaging structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN205692861U (en) | A kind of UV LED encapsulating structure | |
| KR101997247B1 (en) | Light emitting device and light apparatus having thereof | |
| EP3001466B1 (en) | Light-emitting module | |
| CN102290524B (en) | LED (Light Emitting Diode) device and LED (Light Emitting Diode) module device thereof | |
| JP4303550B2 (en) | Light emitting device | |
| US10658550B2 (en) | Ultraviolet light emitting diode and manufacturing method thereof | |
| KR102486032B1 (en) | Light emitting device and lighting apparatus having thereof | |
| JPWO2007018039A1 (en) | Semiconductor light emitting device | |
| KR20140091857A (en) | Light emitting device and light apparatus having thereof | |
| JP6171749B2 (en) | Light emitting device and manufacturing method thereof | |
| KR101997257B1 (en) | Light emitting device and light apparatus having thereof | |
| KR101310107B1 (en) | Encapsulant For UVLED Device, UVLED Device Using The Same And Manufacturing Method thereof | |
| CN101630707A (en) | Manufacturing method and packaging structure of optoelectronic element | |
| KR20140095722A (en) | Light emitting device and light apparatus having thereof | |
| JP6010455B2 (en) | Concentrating solar cell module | |
| KR20170114450A (en) | Light emitting device and lighting emitting module | |
| JP5126127B2 (en) | Method for manufacturing light emitting device | |
| CN204204900U (en) | A kind of LED encapsulation structure | |
| JP2006156662A (en) | Light emitting device | |
| JP2011192682A (en) | Optical semiconductor package and optical semiconductor device | |
| KR102049380B1 (en) | Light emitting module | |
| CN213546349U (en) | Packaging structure of ultraviolet LED lamp pearl | |
| CN212934655U (en) | Packaging structure of ultraviolet light source | |
| CN215266358U (en) | Deep ultraviolet light-emitting diode | |
| CN102856465B (en) | Light emitting diode packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20231024 Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. |