CN102361056A - High brightness large power light emitting diode and manufacture method thereof - Google Patents
High brightness large power light emitting diode and manufacture method thereof Download PDFInfo
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- CN102361056A CN102361056A CN2011103031224A CN201110303122A CN102361056A CN 102361056 A CN102361056 A CN 102361056A CN 2011103031224 A CN2011103031224 A CN 2011103031224A CN 201110303122 A CN201110303122 A CN 201110303122A CN 102361056 A CN102361056 A CN 102361056A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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Abstract
In the invention, nano glass material is utilized as total reflection material, an indium tin oxide nano lenticule is utilized to distribute light uniformly, a light control film is a luminescence angle control assembly, and a purpose of raising large power LED luminous flux is realized. The invention provides a high brightness large power light emitting diode which comprises LED crystal grains, a substrate, wherein the crystal grains connects with an electrode of the substrate through a lead, an interior surface of the substrate is coated with a nano glass layer, a top cover of the substrate is provided with optical glass covering the grains, and fluorescent glue is provided between the optical glass and the crystal grains. In the invention, the nano glass layer is taken as a high efficiency reflecting layer, luminous flux is raised, light loss is reduced, indium tin oxide nano lenticule is utilized to convert a spot light source into a surface light source to distribute light uniformly, combined with the light control film, a light extraction angle is controlled, the luminous flux is effectively increased, and heat radiation efficiency is raised.
Description
Technical field
The present invention relates generally to light-emitting diode (LED) field, more specifically, relates to a kind of high light large power light-emitting diode and manufacturing approach thereof.
Background technology
LED is a kind of light emitting semiconductor device, is used as indicator light, display screen etc. widely.White light LEDs be described as replace fluorescent lamps and incandescent lamp the 4th generation lighting source.LED changed the incandescent lamp tungsten filament luminous with the luminous principle of fluorescent lamp tricolor powder, utilize electroluminescence, have that light efficiency height, radiationless, life-span are long, an advantage of low-power consumption and environmental protection.
A kind of traditional approach that forms white light LEDs is that blue light or ultraviolet chip excite the fluorescent material that is covering on chip, and the light stimulus fluorescent material that chip sends under electricity drives produces the visible light of other wave band, and the each several part colour mixture forms white light.Along with the continuous expansion that LED uses, also increasingly high to the luminous efficiency requirement of LED encapsulation, and luminous efficiency is the most important parameter of decision LED encapsulation.
At present; LED comprises substrate and crystal grain, and crystal grain is fixedly mounted in the substrate, and crystal grain connects the electrode of substrate through lead; Way is earlier crystal grain to be fixed in the substrate as the one of which; Two ends with lead are welded on respectively on crystal grain and the electrode of substrate then, then fluorescence glue are injected in the substrate, and baking at last makes the fluorescent glue water cure process product.
But existing high-power LED encapsulation structure is complicated, is packaged with serious heat dissipation problem, and radiating efficiency is not good; Led chip can't effectively promote luminous flux; And also need use lens, this encapsulating structure like this to reduce yield when wanting to take specific lighting angle, increase cost.Therefore, the luminous flux that how to improve LED encapsulation can solve heat dissipation problem simultaneously again becomes industry key issue anxious to be solved.
Summary of the invention
For overcoming above-mentioned defective of the prior art; It is the total reflection material that the present invention utilizes nano-glass (Nanometer glass) material; With tin indium oxide (Indium Tin Oxide) nanometer lenticule is even light distributed; (Light control film) is the lighting angle control assembly with light control film, and then reaches the purpose that promotes the great power LED luminous flux.
Substrate and crystal grain have been the present invention includes; Crystal grain is fixedly mounted in the substrate, and crystal grain is through the electrode of lead connection substrate, and the inner surface of substrate is coated with the nano-glass layer; Be covered with the oxidation that shields crystal grain on the substrate and plug with molten metal the tin lenticule, the tin lenticule is pluged with molten metal in oxidation and intergranule is provided with fluorescent glue; Plug with molten metal the lenticular outer surface of tin in oxidation and be provided with light control film.Before crystal grain is fixed on substrate; To be dispersed in the volatilizable solvent earlier, make nano-glass solution, then nano-glass solution injected in the substrate; Baking makes the volatilizable solvent evaporates in the nano-glass solution; The nano-glass uniform deposition forms the nano-glass layer in the inner surface of substrate, is placed on the substrate Gu behind the crystalline substance tin lenticule is pluged with molten metal in oxidation, and plugs with molten metal subsides light control film or plating blooming on the tin lenticule in oxidation.
At first one aspect of the present invention provides a kind of high light large power light-emitting diode; Said light-emitting diode comprises LED crystal grain, substrate; Wherein crystal grain connects the electrode of substrate through lead; The inner surface coated with nano glassy layer of said substrate is covered with the optical glass that masks crystal grain on substrate, be provided with fluorescent glue at optical glass and intergranule.
On the other hand, the invention provides a kind of high light large power manufacturing method for LED, this method may further comprise the steps: step 1, manufacturing LED encapsulation; Step 2, manufacturing optical glass; Step 3, will make good optical glass and be fixed on the substrate; Comprise in the said step 1: (1) clicks and enters glue on the solid brilliant position and two solder joints of substrate; (2) nano-glass being put glue is coated on the substrate; (3) remove glue, recover solid brilliant position and two bond pad locations; (4) the LED crystal is carried out solid brilliant program; (5) electrode with crystal grain is connected on the electrode of substrate; (6) fluorescent glue is clicked and entered on the substrate.
Beneficial effect of the present invention is: it is efficient reflector that the present invention utilizes the nano-glass layer; Promote luminous flux, reduce light loss, utilize oxidation to plug with molten metal the tin lenticule simultaneously point-source of light is become area source; Light is evenly distributed; Cooperate light control film control rising angle again, effectively increase luminous flux, and improve radiating efficiency.
Description of drawings
Fig. 1 a-Fig. 1 g is a metallic shield processing procedure sketch map;
Fig. 2 a-Fig. 2 g is a LED encapsulation procedure sketch map;
Fig. 3 a-Fig. 3 c is a tin indium oxide nanometer microlens structure optical glass processing procedure sketch map;
Fig. 4 is angular controlling diaphragm (Light angle control film) processing procedure sketch map;
Fig. 5 is high reflectance nano-glass support or substrate sketch map;
Fig. 6 is the sheet glass sketch map of tin indium oxide (Indium Tin Oxide) the nanometer lenticule of low-temperature transparent;
Fig. 7 is angular controlling diaphragm (Light angle control film) sketch map;
Fig. 8 is a high light large power light-emitting diode sketch map.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment high light large power light-emitting diode provided by the invention and manufacturing approach thereof are described in detail.Here do simultaneously is that more detailed in order to make embodiment, following embodiment be the best, preferred embodiment, also can adopt other alternative and implements for some known technology those skilled in the art with explanation.
At first, according to this technological invention, a kind of high light large power manufacturing method for LED is provided, this method may further comprise the steps: step 1, manufacturing LED encapsulation; Step 2, manufacturing optical glass; Step 3, will make good optical glass and be fixed on the substrate; Comprise in the said step 1: (1) clicks and enters glue on the solid brilliant position and two solder joints of substrate; (2) nano-glass being put glue is coated on the substrate; (3) remove glue, recover solid brilliant position and two bond pad locations; (4) the LED crystal is carried out solid brilliant program; (5) be connected on the electrode of substrate through the electrode of lead crystal grain; (6) fluorescent glue is clicked and entered on the substrate.
Before stating manufacturing approach on the implementation; Can preferably implement the manufacturing of metallic shield; Shown in Fig. 1 a-Fig. 1 g, (1) uses electron-beam direct writing (Electron Beam direct writing) mode to carry out pattern (Pattern) making in the chromium layer (Chromium layer) of quartzy (Quartz) mask blank (Photo mask), and the chromium metal layer thickness is the 10-30 nanometer; (2) mask blank (Photo mask) is placed DUV exposure system (Deep Ultraviolet Exposure System) and the optical grade corrosion resistant plate that is coated with negative photoresist is carried out the DUV exposure manufacture process; Its exposure energy is 500-1000KJ, and the time for exposure is 0.1-0.8ms, and the model of negative photoresist is SU-8; Thickness is the 0.6-2.0 micron; Use its rotating speed of vacuum rotary coating mode to be 5000-10000rpm, preceding roasting temperature is 70-120 ℃, and the time is 20-50 minute; (3) carry out developing manufacture process afterwards, its naoh concentration: 3-8%, developing time: 10-30 second, temperature: 25-50 ℃; (4) carry out reactive ion etching again the optical grade corrosion resistant plate is carried out etching, the time is 10-50 second; (5) (the ferronickel ratio is 7-9: 3-1) carry out the electroforming processing procedure, its temperature is 45-70 ℃ with nickel-iron alloy plating liquid afterwards; (6) carry out the stripping processing procedure afterwards, its naoh concentration: 5-10%, developing time: 50-80 second, temperature: 50-80 ℃; (7) make metallic shield (Metal mask) to turn over the mould mode again.
The relevant processing procedure of LED encapsulation is shown in Fig. 2 a-2g; Can be preferred; (1) with suitable high-volatile transparent solvent; Like (pure water etc.), the high reflectance nano-glass of handling with overlay coating carries out even high-speed stirred (High speed stirring) with planetary stirring machine, and its rotating speed is 5000-10000rpm; And nano-glass overlay coating type of being polysilane (Polysilane), and high reflected coat layer (titanium dioxide: TiO2), its thickness of coating is the 10-200 nanometer, and the nano-glass particle diameter is the 50-300 nanometer; (2) elder generation, is preferably red glue (Red Glue) here and clicks and enters on solid brilliant position (Die bond pad) and two solder joints (2nd wire bonding pad) all-purpose gum with point gum machine (Dispenser); (3) afterwards through baking, it is 80-160 ℃; 10-50 minute, again high reflectance nano-glass solution is clicked and entered support or substrate with point gum machine (Dispenser), through baking, it is 50-160 ℃; 10-90 minute, behind the removal solvent, high reflected coat layer nano-glass can be deposited on support or the substrate; (4) remove red glue afterwards and can recover solid brilliant position (Die bond pad) and two solder joints (2nd wire bonding pad) position, processing procedure after carrying out.
Blue light emitting diode chip (Blue LED chip) is toasted in (5) afterwards, and it is 50-100 ℃; 30-50 minute; With thermal conductive insulation glue (Thermal conductive insulated paste) on two-sided heat-radiating substrate; With automatically solid brilliant machine (Automatic Die Bonder) blue LED chip is carried out solid brilliant program (Die bonding process); That is so-called COB program (Chip On Board process), toast (120-180 ℃ afterwards; 30-50 minute).The setup parameter of automatically solid brilliant machine is following: chip suction nozzle pressure (2-10Nt/m
2); Chip suction nozzle height (10-30mil); Swing arm speed is 40-500ms/cycle; Board coplanarity (90-100).And thermal conductive insulation glue needs after room temperature was thawed 10-120 minute before using; Remove the steam that is attached to glue material vessel surface; Carry out vacuum defoamation program (Vacuum de-bubbling process) afterwards; Time 1-30 minute, vacuum degree was the 0.001-0.000001mmHg millimetres of mercury, and rotary speed is 2000-30000rpm.
Afterwards can be preferred; Carry out the little erosion of plasma (Plasma micro-etching); Use inertia (like argon gas) or reactant gas to remove the oxide of chip surface, grease, or other impurity; Parameter is following: vacuum degree is the 0.001-0.000001mmHg millimetres of mercury, gas flow: 80-200sccm.
The bonding wire program is carried out in (6) afterwards; Behind (1st solder joint) balling on two positive and negative electrodes of blue LED chip; (2nd solder joint) balling on the weld pad of two-sided heat-radiating substrate again, the setup parameter of bonding equipment is following automatically: chip porcelain mouth down force pressure is 5-15Nt/m
2, porcelain mouth temperature is 180-270 ℃, and the bonding wire time is 40-500ms/cycle, and the board temperature of heating plate is 180-270 ℃.
(7) with transparent silica gel and yellow fluorescent powder configuration fluorescent glue, and transparent silica gel comprises organic silicone and organosilicon curing agent, and its weight proportion with yellow fluorescent powder is 1: 1: (0.01-1), promptly transparent silica gel is pair components mixing; Click and enter in the support with point gum machine again or on the substrate, through baking, it is 150-180 ℃ again; 1-5 hour; Can accomplish the operation of a fluorescent glue.
For light-emitting diode can evenly be distributed by light, thereby obtain better optical property, the present invention further makes the optical glass of tin indium oxide nanometer microlens structure; Shown in Fig. 3 a-Fig. 3 c; Its processing procedure is following: optical glass carries out surface clean with removal grease and other impurity with pure water earlier, and temperature is 20-100 ℃, and the time is 1-10 minute; Toast afterwards and dewater its temperature: 90-150 ℃; Time: 30-120 minute, gentle Cement Composite Treated by Plasma was carried out to increase tin indium oxide in the tackness of optical glass surface with optical glass in (1) afterwards, and vacuum degree is the 0.001-0.000001 millimetres of mercury; Time is 1-10 minute; Using gases is argon gas (purity is 99.999%), afterwards the optical glass after the surface treatment is inserted vacuum drying chamber and preserves.
Wherein, Preferably, will pass through the optical glass of gentle plasma surface treatment, carry out vacuum splashing and plating (Vacuum sputtering) processing procedure after putting into low temperature level magnetic control sputtering plating machine; Wherein, on optical glass, make the nanometer microlens structure with metallic shield collocation vacuum level sputtering way.And target (Target) is a tin indium oxide, and before the target use, need dewater, and its temperature is 80-150 ℃; Time is 30-120 minute; Vacuum degree is the 0.001-0.000001 millimetres of mercury; Time is 1-10 minute; Using gases is argon gas (purity is 99.999%), with the momentum branch mode with the tin indium oxide molecule deposition on the surface of glass lens, and thickness is the 0.00001-0.001 millimeter.
For eliminating the internal stress of low-temperature oxidation indium tin coating nano thin-film, need carry out pulse laser short annealing processing procedure, its annealing time is 1-100 millisecond (every chips).
To have tin indium oxide nanometer microlens structure optical glass at last is placed on support (marginal point glue) or the substrate (surface point glue); After baking, can optical glass be fixed on support or the substrate; Concrete process parameter is following: with point gum machine hot-setting adhesive is put on support (marginal point glue) or substrate (surface point glue); Baking journey before carrying out afterwards, it is 100-200 ℃; 100-200 minute, afterwards tin indium oxide nanometer microlens structure optical glass is placed on support or the substrate, carry out back baking journey, it is 150-250 ℃; 120-240 minute.
As shown in Figure 4, preferred, angular controlling diaphragm (Light angle control film) is attached at the another side of optical glass, also promptly with rightabout towards substrate, can accomplish the making of high light large power light-emitting diode.Wherein, the angular controlling diaphragm is to be base material (promptly being plated on the PET) with PET, carries out hot pressing afterwards and removes the PET film, the angular controlling diaphragm is attached to the top of glass.
The present invention is in another aspect through above-mentioned manufacture method; A kind of high light large power light-emitting diode is provided; It is the high light large power light-emitting diode of total reflection material processed support or substrate with the high reflectance nano-glass; Collocation tin indium oxide (Indium Tin Oxide) nanometer lenticule array sheet glass and light control film can be made the light-emitting diode of various high brightness; Its structure comprises: high reflectance nano-glass support or substrate as shown in Figure 5: the high reflectance nano-glass that this support or substrate are handled by overlay coating, with point gum machine nano-glass solution is clicked and entered support or substrate after, after toasting, make again.
The tin indium oxide of low-temperature transparent as shown in Figure 6 (Indium Tin Oxide) the lenticular sheet glass of nanometer: on optical glass, make the nanometer microlens structure with metallic shield collocation vacuum level sputtering way.
As shown in Figure 7, angular controlling diaphragm (Light angle control film): the blooming of different refractivity and reflectivity is plated on the plastic basis material, again to be attached on the nanometer lenticule sheet glass by the glue mode.
As shown in Figure 8; This high brightness LED comprises LED crystal grain, substrate, and wherein crystal grain is through the electrode of lead connection substrate, the inner surface coated with nano glassy layer of said substrate; On substrate, be covered with the optical glass that masks crystal grain, be provided with fluorescent glue at optical glass and intergranule.Wherein preferred, be provided with tin indium oxide nanometer microlens structure at optical glass towards a side of substrate; Be pasted with one deck angular controlling diaphragm on the opposite side surface of optical glass.Wherein, the thickness of nano-glass layer is preferably the 10-200 nanometer.The nano-glass particle diameter is preferably the 50-300 nanometer.Said LED crystal grain is fixed on the solid brilliant position of substrate through crystal-bonding adhesive.
What should explain at last is; Above embodiment is only in order to describe technical scheme of the present invention rather than the present technique method is limited; The present invention can extend to other modification, variation, application and embodiment on using, and therefore thinks that all such modifications, variation, application, embodiment are in spirit of the present invention and teachings.
Claims (13)
1. high light large power light-emitting diode; Said light-emitting diode comprises LED crystal grain, substrate; Wherein crystal grain connects the electrode of substrate through lead; It is characterized in that: the inner surface coated with nano glassy layer of said substrate, on substrate, be covered with the optical glass that masks crystal grain, be provided with fluorescent glue at optical glass and intergranule.
2. light-emitting diode as claimed in claim 1 is characterized in that, is provided with tin indium oxide nanometer microlens structure at optical glass towards a side of substrate.
3. light-emitting diode as claimed in claim 2 is characterized in that, is pasted with one deck angular controlling diaphragm on the opposite side surface of optical glass.
4. like the arbitrary described light-emitting diode of claim 1-3, it is characterized in that the thickness of said nano-glass layer is the 10-200 nanometer.
5. light-emitting diode as claimed in claim 4 is characterized in that, the nano-glass particle diameter is the 50-300 nanometer.
6. light-emitting diode as claimed in claim 4 is characterized in that, said LED crystal grain is fixed on the solid brilliant position of substrate through crystal-bonding adhesive.
7. light-emitting diode as claimed in claim 1; It is characterized in that; Said fluorescent glue is with the configuration of transparent silica gel and yellow fluorescent powder, and wherein and transparent silica gel comprises organic silicone and organosilicon curing agent, the weight proportion of itself and yellow fluorescent powder is 1: 1: (0.01-1).
8. high light large power manufacturing method for LED, this method may further comprise the steps:
Step 1, manufacturing LED encapsulation;
Step 2, manufacturing optical glass;
Step 3, optical glass is fixed on the substrate;
It is characterized in that: comprise in the said step 1:
(11) glue is clicked and entered on the solid brilliant position and two solder joints of substrate;
(12) nano-glass being put glue is coated on the substrate;
(13) remove glue;
(14) the LED crystal is carried out solid brilliant program;
(15) electrode with crystal grain is connected on the electrode of substrate;
(16) fluorescent glue is clicked and entered on the substrate.
9. method as claimed in claim 8 is characterized in that, said method also comprises the manufacturing metallic shield:
(1) the chromium layer in quartzy mask blank carries out the pattern making;
(2) to optical grade stainless steel board to explosure;
(3) develop;
(4) the optical grade corrosion resistant plate is carried out etching;
(5) carry out electroforming;
(6) carry out stripping;
(7) make metallic shield to turn over the mould mode again.
10. like claim 8 or 9 described methods, it is characterized in that said method also comprises the one side that the angular controlling diaphragm is attached at optical glass.
11. method as claimed in claim 10 is characterized in that, said step 2 may further comprise the steps:
(21) optical glass is carried out gentle Cement Composite Treated by Plasma;
(22) on optical glass, make the nanometer microlens structure;
(23) anneal.
12. method as claimed in claim 8 is characterized in that, the optical glass that in said step 3, will have tin indium oxide nanometer microlens structure is placed on the substrate, and surface point glue is fixed in optical glass on the substrate.
13. method as claimed in claim 8 is characterized in that, carries out the little erosion of plasma said after the LED crystal is carried out solid brilliant program.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011103031224A CN102361056A (en) | 2010-10-15 | 2011-09-30 | High brightness large power light emitting diode and manufacture method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010509110.2 | 2010-10-15 | ||
| CN2010105091102A CN102034919A (en) | 2010-10-15 | 2010-10-15 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
| CN2011103031224A CN102361056A (en) | 2010-10-15 | 2011-09-30 | High brightness large power light emitting diode and manufacture method thereof |
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| CN102361056A true CN102361056A (en) | 2012-02-22 |
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| CN2010105091102A Pending CN102034919A (en) | 2010-10-15 | 2010-10-15 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
| CN2011103031224A Pending CN102361056A (en) | 2010-10-15 | 2011-09-30 | High brightness large power light emitting diode and manufacture method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103148388A (en) * | 2012-12-20 | 2013-06-12 | 杭州临安恒星照明电器有限公司 | Omnidirectional energy-saving lamp with LED (light emitting diode) chips |
| CN104895885A (en) * | 2015-05-19 | 2015-09-09 | 浙江水晶光电科技股份有限公司 | Assembly part solidifying method and device |
| CN110112129A (en) * | 2019-06-05 | 2019-08-09 | 福建天电光电有限公司 | A kind of emitting semiconductor manufacture craft of glass flourescent sheet |
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| CN102034919A (en) * | 2010-10-15 | 2011-04-27 | 陈林 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
| CN102005532A (en) * | 2010-10-15 | 2011-04-06 | 陈林 | High-efficiency reflective LED package structure and packaging method thereof |
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| CN102034919A (en) * | 2010-10-15 | 2011-04-27 | 陈林 | High-brightness high-power light-emitting diode (LED) and manufacturing method thereof |
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| US20070085101A1 (en) * | 2005-10-19 | 2007-04-19 | Lg Innotek Co., Ltd. | Light emitting diode package |
| US20100109037A1 (en) * | 2008-11-05 | 2010-05-06 | Kabushiki Kaisha Toshiba | Fluorescer solution, light-emitting device, and method for manufacturing same |
| CN201853739U (en) * | 2010-10-11 | 2011-06-01 | 蒋梦孜 | High-efficiency reflective LED encapsulating structure |
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| CN103148388A (en) * | 2012-12-20 | 2013-06-12 | 杭州临安恒星照明电器有限公司 | Omnidirectional energy-saving lamp with LED (light emitting diode) chips |
| CN104895885A (en) * | 2015-05-19 | 2015-09-09 | 浙江水晶光电科技股份有限公司 | Assembly part solidifying method and device |
| CN110112129A (en) * | 2019-06-05 | 2019-08-09 | 福建天电光电有限公司 | A kind of emitting semiconductor manufacture craft of glass flourescent sheet |
| CN110112129B (en) * | 2019-06-05 | 2024-04-02 | 福建天电光电有限公司 | Manufacturing process of luminous semiconductor of glass fluorescent sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102034919A (en) | 2011-04-27 |
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Application publication date: 20120222 |