CN102800585B - A kind of electroforming process for making of light-emitting diode - Google Patents
A kind of electroforming process for making of light-emitting diode Download PDFInfo
- Publication number
- CN102800585B CN102800585B CN201210236110.9A CN201210236110A CN102800585B CN 102800585 B CN102800585 B CN 102800585B CN 201210236110 A CN201210236110 A CN 201210236110A CN 102800585 B CN102800585 B CN 102800585B
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- light
- electroforming
- substrate
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of electroforming process for making of light-emitting diode, the substrate that one is provided with plural epitaxial layer and finishing patterns metal level is provided, on the end face of epitaxial layer and after the sidewall of patterned metal layer forms an insulating barrier, the electroforming processing procedure of recycling electroforming processing unit carries out the support heat dissipating layer forming suitable thicknesses of metal material, again substrate is cut, to obtain plural LED crystal particle, and utilize Flip Chip to be mounted to by light-emitting diode on a bearing substrate, finally, described substrate is peeled off again with laser beam, therefore, the present invention is solved the slow-paced problem of processing procedure that manufacture method causes that prior art uses underfill, and the support force required for laser beam stripping substrate process is provided, more can reach the heat extraction effect of height.
Description
Technical field
The present invention relates to a kind of manufacture method of flip-chip light-emitting diode, specifically about a kind of electroforming process for making of flip-chip light-emitting diode.
Background technology
Light-emitting diode component has that power consumption is few, volume is little and the characteristic of long service life, by being used in display application in the past as instrument stop lamp, movable advertising board, outdoor billboard, be applied in general lighting, special lighting up to now as the backlight of traffic sign, Landscape Lighting, projecting lamp or even liquid crystal display.With regard to the part of illumination, because the considering of energy efficiency, light-emitting diode likely replaces incandescent lamp, fluorescent lamp especially.
Under the prerequisite being able to extensive use at light-emitting diode, problem manufacturing technology but still having many need overcome exists.The known skill of current light-emitting diode mainly can divide three kinds haply according to effect and object: gallium nitride (GaN-on-Si) crystal technique of heap of stone provides low cost of manufacture; Membrane of flip chip (Flip-Chip) technology can provide high luminous power; Metal bond (Metal-Bonding) technology can improve operating current.Wherein the light-emitting diode of membrane of flip chip structure significantly can increase luminous efficiency, but also easily destroy associated component because of incident high temperature, in addition, membrane of flip chip technology is in the process peeling off sapphire substrate, easily the epitaxial layer of gallium nitride is caused to break because producing seismic wave, current solution refers to Fig. 1 to Fig. 3, it is brilliant in substrate so that covering of prior art to be described, underfill method for filling and laser beam peel off substrate schematic diagram, as shown in Figure 1, prior art provides well cutting but not yet peels off the plural light emitting diode 12 of sapphire substrate 10 and cover brilliant on submounts 14, each light emitting diode 12 comprises the epitaxial layer 16 be positioned on sapphire substrate 10, the bottom surface of epitaxial layer 16 is formed with the first metal electrode 18 and the second metal electrode 20, as shown in Figure 2, pouring into underfill 24 with dispensing needle head 22 is again filled in bottom epitaxial layer 16, underfill 24 fills up the space of light emitting diode 12 and sapphire substrate 10 because capillarity starts to spread, last completely closely sealed first metal electrode 18 and the second metal electrode 20, after baking, make underfill 24 hardening, to provide epitaxial layer 16 bottom support power, now underfill 24 will produce bubble 26 because of coated air gap, as shown in Figure 3, to peel off in the middle of sapphire substrate 10 process with laser beam 28 because produce the existence of seismic wave and bubble 26, so that epitaxial layer 16 bottom support power is not enough and produce slight crack 30, finally cause component failures.In addition, again with the shortcoming of epitaxial layer 16 filling underfill 24, because needs will make processing procedure speed become slow by a perfusion underfill 24, and because the good conductor of underfill 24 because being not heat energy, therefore the heat energy that light emitting diode 12 produces also cannot be discharged fast, makes produce high temperature and shorten useful life.
Therefore, how to solve the consuming time and disappearance because of coated air gap produce bubble of manufacture method on processing procedure of the flip-chip light-emitting diode of prior art, be the place, direction for research improvement.
In view of this, the present invention is directed to above-mentioned problem, a kind of electroforming process for making of light-emitting diode is proposed, to make metallic support heat dissipating layer, can make to accelerate manufacture process, owing to using the manufacture method of electroforming to make metallic support heat dissipating layer, therefore more can provide and use laser beam to peel off the necessary support force of sapphire substrate process, make epitaxial layer be unlikely generation and break.
Summary of the invention
The main purpose of the present invention, tie up to the electroforming process for making that a kind of light-emitting diode is provided, utilize electroforming processing procedure that the substrate of processing procedure epitaxial layer and metal electrode is connected negative electrode, to carry out the metallic support heat dissipating layer that suitable thickness is amassed in Shen, first procedure can complete the supporting layer of thousands of crystal grain contained on wafer, is solved prior art because of needing by a perfusion underfill and causes processing procedure speed problem too slowly.
Another object of the present invention, tie up to the electroforming process for making that a kind of light-emitting diode is provided, utilize the metallic support heat dissipating layer made by electroforming processing procedure, processing procedure can be made stable with improving product yield, solve prior art causes bubble disappearance because using filling glue, support force required for laser beam stripping substrate process is provided, epitaxial layer is unlikely and breaks.
An object again of the present invention, tie up to the electroforming process for making that a kind of light-emitting diode is provided, owing to being utilize electroforming processing procedure to make metallic support heat dissipating layer, therefore there is the heat extraction effect of height, cause because using the supporting layer made by the filling glue of non-thermal energy good conductor the disappearance that high temperature cannot be discharged to solve prior art, because metallic support heat dissipating layer can quick heat radiating heat conduction, avoid crystal grain localized hyperthermia, therefore assembly useful life itself and luminous efficiency can be increased, more can the reliability of lifting subassembly.
For reaching above-mentioned object, the invention provides a kind of electroforming process for making of light-emitting diode, its step at least comprises:
There is provided a substrate, which is provided with plural light emitting diode, light emitting diode described in each comprises the epitaxial layer be positioned on described substrate, and one of described epitaxial layer end face is formed with a patterned metal layer; On the described end face of described epitaxial layer and the sidewall of described patterned metal layer form an insulating barrier;
Electroforming is carried out to light emitting diode described in each, so that described epitaxial layer is formed a metallic support heat dissipating layer;
Cut in units of described light emitting diode, to obtain plural LED crystal particle;
With Flip Chip, described LED crystal particle is mounted on a bearing substrate; And
Described substrate is peeled off with laser beam.
As said method preferred version and improve further, following aspect can be embodied in:
In one preferred embodiment, described patterned metal layer is one first metal electrode and one second metal electrode.
In one preferred embodiment, light emitting diode described in each carries out electroforming, so that described epitaxial layer is formed the electroforming step of a metallic support heat dissipating layer, this electroforming step comprises: will connect anode for the metal material of electroforming; And described substrate connects negative electrode and in immersion plating solution, to form a metallic support heat dissipating layer.In preferred embodiment on this basis, described electroplating solution is copper sulphate, sulfuric acid or chloride ion.
In one preferred embodiment, the material of described substrate is sapphire, gallium nitride, aluminium nitride, carborundum, silicon or aluminum gallium nitride.
In one preferred embodiment, the material of described patterned metal layer is individual layer and the multi-layer metal structure of titanium, aluminium, gold, nickel, copper, silver, platinum, osmium, lithium, chromium, caesium or tungsten.
In one preferred embodiment, the material of described insulating barrier is oxide, nitride, polymethyl methacrylate (PMMA), photoresistance SU-8, silica gel or epoxy resin.
In one preferred embodiment, described metal material is tin, copper, nickel, cobalt, gold, aluminium, tungsten, tin indium oxide, silver, chromium, platinum, molybdenum or tungsten.
In one preferred embodiment, it is 2 μm to 100 μm that described metallic support heat dissipating layer forms thickness.
In one preferred embodiment, after the step of described insulating barrier, more comprise: remove this insulating barrier of part by etching technique, to expose the described patterned metal layer of part.
In one preferred embodiment, after the step forming described metallic support heat dissipating layer, more comprise: remove the described metallic support heat dissipating layer of part by etching technique, to expose the described patterned metal layer of part.
The beneficial effect that the present invention brings is:
1. do not need to process for single light emitting diode, but the synchronous metal that produces makes heat dissipating layer, therefore its processing procedure is obviously quick.
2. according to the feature of electroforming, metallic support heat dissipating layer progressively can grow according to the surface configuration of the first metal electrode and the second metal electrode and draw, but not the external force of prior art pours into, so its shaping strength is high, provided the support force required for laser beam stripping substrate process.
3. the conductive coefficient of metal material is general higher, and the metallic support heat dissipating layer utilizing metal material made has the heat extraction effect of height especially, therefore can increase assembly useful life itself and luminous efficiency.
Accompanying drawing explanation
Below in conjunction with accompanying drawing embodiment, the invention will be further described:
Fig. 1 is that covering of prior art is brilliant in substrate schematic diagram.
Fig. 2 is the underfill method for filling of prior art.
Fig. 3 is that the laser beam of prior art peels off substrate schematic diagram.
Fig. 4 is the formation insulating barrier schematic diagram of the embodiment of the present invention one.
Fig. 5 be the embodiment of the present invention one remove appropriate insulating barrier schematic diagram.
Fig. 6 is the formation metallic support heat dissipating layer schematic diagram of the embodiment of the present invention one.
Fig. 7 be the embodiment of the present invention one remove appropriate metallic support heat dissipating layer schematic diagram.
Fig. 8 is that the laser beam of the embodiment of the present invention one peels off substrate schematic diagram.
Fig. 9 is the electroforming schematic diagram of the embodiment of the present invention one.
Embodiment
The present invention is that a kind of electroforming process for making that uses carries out plated metal support heat dissipating layer, owing to being use electroforming process for making, epitaxial layer can be made no longer to produce because bubble exists because of using filling glue to make supporting layer break, to provide the support force required for laser beam stripping substrate process, the present invention uses metal material to make metallic support heat dissipating layer, and supporting layer more can be made to have radiating effect.
The implementation method of the present invention, please refer to Fig. 4 to Fig. 8, illustrates the formation insulating barrier of the present invention, removes appropriate insulating barrier schematic diagram, forms metallic support heat dissipating layer schematic diagram, removes appropriate metallic support heat dissipating layer schematic diagram and laser beam stripping substrate schematic diagram.As shown in Figure 4, the present invention proposes a kind of electroforming process for making of light-emitting diode, its step at least comprises: provide as sapphire, gallium nitride, aluminium nitride, carborundum, the material such as silicon or aluminum gallium nitride and the substrate 32 do not cut, the substrate 32 that provides has the plural light emitting diode 34 made, each light emitting diode 34 comprises the epitaxial layer 36 be positioned on substrate 32, having at the end face of epitaxial layer 36 on it uses material to be titanium, aluminium, gold, nickel, copper, silver, platinum, osmium, lithium, chromium, first metal electrode 38 and second metal electrode 40 that individual layer and multi-layer metal structure were formed of caesium or tungsten, using as patterned metal layer.Subsequently, on the end face of epitaxial layer 36 and the sidewall of the first metal electrode 38 and the second metal electrode 40, rotary coating can be used, the technology of rapid thermal treatment or chemical vapour deposition (CVD) carries out deposition and formed if the isolation material formation insulating barriers 42 such as oxide, nitride, polymethyl methacrylate (PMMA), photoresistance SU-8, silica gel or epoxy resin are to carry out protecting and the sidewall of insulate epitaxial layer 36 and the first metal electrode 38 and the second metal electrode 40, as shown in Figure 5, after substrate 32 forms insulating barrier 42, use material to remove part insulating barrier 42 by light shield collocation etching technique for insulating barrier 42 again, to expose one end of part the first metal electrode 38 and the second metal electrode 40, form the first contact jaw 44 and the second contact jaw 46 respectively, as shown in Figure 6, and consult Fig. 9 simultaneously, formation metallic support heat dissipating layer method and the electroforming schematic diagram of the present invention are described, as shown in the figure, will for carrying out electroforming process as tin, copper, nickel, cobalt, gold, aluminium, tungsten, tin indium oxide, silver, chromium, platinum, the metal material 48 of molybdenum or tungsten is put to electroforming processing unit 50 and connects anode+and immerse copper sulphate, in the electroplating solution 52 of sulfuric acid or chloride ion, substrate 32 connects negative electrode-and immerses copper sulphate, in the electroplating solution 52 of sulfuric acid or chloride ion, therefore, electroforming processing unit 50 will produce chemical reaction, and precipitating metal ion M+, to carry out the metallic support heat dissipating layer 54 that formation thickness is 2 μm to 100 μm, as shown in Figure 7, by the substrate 32 carrying out electroforming and complete, then undertaken removing part metallic support heat dissipating layer 54 by the material of light shield collocation etching technique for metallic support heat dissipating layer 54, make the first contact jaw 44 and the second contact jaw 46 outside exposed, as shown in Figure 8, then cut in units of each light emitting diode 34, after obtaining plural LED crystal particle 35, then with Flip Chip, LED crystal particle is mounted on bearing substrate 56, finally, then peels off substrate 32 with laser beam 58.
The electroforming process for making of a kind of light-emitting diode disclosed by above-mentioned execution mode, the mode of electroforming processing procedure is utilized to carry out being formed the metallic support heat dissipating layer of suitable thickness, do not need to process for single light emitting diode 34, but the synchronous metal that produces makes heat dissipating layer 54, therefore its processing procedure is obviously quick.
Second aspect, due to the feature of electroforming, metallic support heat dissipating layer 54 progressively can grow according to the surface configuration of the first metal electrode 38 and the second metal electrode 40 and draw, but not the external force of prior art pours into, so its shaping strength is high, provided the support force required for laser beam stripping substrate process;
The third aspect, the conductive coefficient of metal material is general higher, and the metallic support heat dissipating layer utilizing metal material made has the heat extraction effect of height especially, therefore can increase assembly useful life itself and luminous efficiency.
The above, be only present pre-ferred embodiments, therefore can not limit scope of the invention process according to this, the equivalence change namely done according to the scope of the claims of the present invention and description with modify, all should still belong in scope that the present invention contains.
Claims (9)
1. an electroforming process for making for light-emitting diode, is characterized in that: its step comprises:
There is provided a substrate, which is provided with plural light emitting diode, light emitting diode described in each comprises the epitaxial layer be positioned on described substrate, and one of described epitaxial layer end face is formed with a patterned metal layer; On the described end face of described epitaxial layer and the sidewall of described patterned metal layer form an insulating barrier; The described insulating barrier of part is removed, with patterned metal layer described in exposed portion by etching technique;
Electroforming is carried out to light emitting diode described in each, so that described epitaxial layer is formed a metallic support heat dissipating layer; The described metallic support heat dissipating layer of part is removed, with patterned metal layer described in exposed portion by etching technique;
Cut in units of described light emitting diode, to obtain plural LED crystal particle;
With Flip Chip, described LED crystal particle is mounted on a bearing substrate; And peel off described substrate with laser beam.
2. the electroforming process for making of a kind of light-emitting diode as claimed in claim 1, is characterized in that: wherein said patterned metal layer is one first metal electrode and one second metal electrode.
3. the electroforming process for making of a kind of light-emitting diode as claimed in claim 1, it is characterized in that: electroforming is carried out to light emitting diode described in each, so that described epitaxial layer is formed in the electroforming step of a metallic support heat dissipating layer, anode will be connected for the metal material of electroforming; And described substrate connects negative electrode and in immersion plating solution, to form described metallic support heat dissipating layer.
4. the electroforming process for making of a kind of light-emitting diode as claimed in claim 1, is characterized in that: the material of wherein said substrate is sapphire, gallium nitride, aluminium nitride, carborundum, silicon or aluminum gallium nitride.
5. the electroforming process for making of a kind of light-emitting diode as claimed in claim 1, is characterized in that: the material of wherein said patterned metal layer is the single or multiple lift metal structure of titanium, aluminium, gold, nickel, copper, silver, platinum, osmium, lithium, chromium, caesium or tungsten.
6. the electroforming process for making of a kind of light-emitting diode as claimed in claim 1, is characterized in that: the material of described insulating barrier is oxide, nitride, polymethyl methacrylate, photoresistance SU-8, silica gel or epoxy resin.
7. the electroforming process for making of a kind of light-emitting diode as claimed in claim 3, is characterized in that: wherein said metal material is tin, copper, nickel, cobalt, gold, aluminium, silver, chromium, platinum, molybdenum or tungsten.
8. the electroforming process for making of a kind of light-emitting diode as claimed in claim 3, is characterized in that: described electroplating solution is copper sulphate, sulfuric acid or Chloride Solution.
9. the electroforming process for making of a kind of light-emitting diode as claimed in claim 1, is characterized in that: it is 2 μm to 100 μm that described metallic support heat dissipating layer forms thickness.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210236110.9A CN102800585B (en) | 2012-07-09 | 2012-07-09 | A kind of electroforming process for making of light-emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210236110.9A CN102800585B (en) | 2012-07-09 | 2012-07-09 | A kind of electroforming process for making of light-emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102800585A CN102800585A (en) | 2012-11-28 |
| CN102800585B true CN102800585B (en) | 2015-09-09 |
Family
ID=47199655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210236110.9A Active CN102800585B (en) | 2012-07-09 | 2012-07-09 | A kind of electroforming process for making of light-emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102800585B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112582515B (en) * | 2020-12-11 | 2021-09-28 | 苏州芯聚半导体有限公司 | Light emitting diode and manufacturing method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1655348A (en) * | 2004-02-12 | 2005-08-17 | 冲电气工业株式会社 | Electronic part mounting substrate, electronic part, and semiconductor device |
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN101099223A (en) * | 2005-01-11 | 2008-01-02 | 美商旭明国际股份有限公司 | Light emitting diode with conducting metal substrate |
| CN101345276A (en) * | 2007-07-12 | 2009-01-14 | 台达电子工业股份有限公司 | LED device and its preparing process |
| CN101569024A (en) * | 2007-02-21 | 2009-10-28 | 松下电器产业株式会社 | Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
| CN102106006A (en) * | 2008-06-02 | 2011-06-22 | 高丽大学校 | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
| CN102403436A (en) * | 2010-09-07 | 2012-04-04 | 昆山科技大学 | Method for manufacturing heat sink of semi-conductor light emitting component |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120061700A1 (en) * | 2010-09-09 | 2012-03-15 | Andreas Eder | Method and system for providing a reliable light emitting diode semiconductor device |
-
2012
- 2012-07-09 CN CN201210236110.9A patent/CN102800585B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1655348A (en) * | 2004-02-12 | 2005-08-17 | 冲电气工业株式会社 | Electronic part mounting substrate, electronic part, and semiconductor device |
| CN1973375A (en) * | 2004-03-29 | 2007-05-30 | J.P.瑟塞尔联合公司 | Method of separating layers of material using laser beam |
| CN101099223A (en) * | 2005-01-11 | 2008-01-02 | 美商旭明国际股份有限公司 | Light emitting diode with conducting metal substrate |
| CN101569024A (en) * | 2007-02-21 | 2009-10-28 | 松下电器产业株式会社 | Semiconductor light emitting element and method for manufacturing semiconductor light emitting device |
| CN101345276A (en) * | 2007-07-12 | 2009-01-14 | 台达电子工业股份有限公司 | LED device and its preparing process |
| CN102106006A (en) * | 2008-06-02 | 2011-06-22 | 高丽大学校 | Supporting substrate for fabrication of semiconductor light emitting device and semiconductor light emitting device using the same |
| CN102403436A (en) * | 2010-09-07 | 2012-04-04 | 昆山科技大学 | Method for manufacturing heat sink of semi-conductor light emitting component |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102800585A (en) | 2012-11-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203932096U (en) | Flexible light-emitting semiconductor device and for supporting and be electrically connected the flexible article of light-emitting semiconductor device | |
| CN202473919U (en) | Flexible circuit substrate double-side lighting LED array light source | |
| CN103123949A (en) | Flexible light emitting diode package structure and manufacturing method thereof | |
| CN103579477B (en) | Light emitting diode flip chip packaging method based on through hole technology | |
| CN101345277B (en) | Production method of illuminating diode apparatus | |
| CN102222625A (en) | Manufacturing method of light-emitting diode (LED) packaging structure and base thereof | |
| CN102361056A (en) | High brightness large power light emitting diode and manufacture method thereof | |
| CN103066192A (en) | Semiconductor illuminating light source and method of manufacturing the same and semiconductor illuminating chip | |
| CN102903705A (en) | Light emitting diode packaging structure and manufacturing method thereof | |
| JP2013187545A (en) | Method of manufacturing light-emitting diode package | |
| CN103354266A (en) | Thin type wafer lever LED (Light-Emitting Diode) packaging structure and method | |
| CN202210534U (en) | Semiconductor packaging structure | |
| CN101442040B (en) | Encapsulation structure for LED and method of manufacturing the same | |
| CN102800585B (en) | A kind of electroforming process for making of light-emitting diode | |
| CN109065689A (en) | A kind of Micro LED encapsulation structure and preparation method thereof | |
| CN100383989C (en) | Laser stripped power LED chip on thermal metal deposition and production thereof | |
| CN110190172A (en) | A kind of six face light extracting LED microdevice of fluorescence ceramics substrate and its manufacturing method | |
| CN103117343B (en) | LED with mirror structure and preparation method thereof | |
| JP2013138205A (en) | Light-emitting diode package and manufacturing method thereof | |
| CN103456853A (en) | White light LED chip and production method thereof | |
| TWI453947B (en) | Manufacturing method of electro - optical diode for electroforming | |
| CN116190503A (en) | Transfer device and preparation method of display panel | |
| CN106935577A (en) | Light-emitting diode assembly | |
| CN102194966A (en) | Light-emitting diode (LED) structure with efficient heat dissipation effect and manufacturing method thereof | |
| TW200926444A (en) | Method for packaging LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |